CN214043683U - Photovoltaic cell piece and photovoltaic module - Google Patents
Photovoltaic cell piece and photovoltaic module Download PDFInfo
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- CN214043683U CN214043683U CN202023223196.0U CN202023223196U CN214043683U CN 214043683 U CN214043683 U CN 214043683U CN 202023223196 U CN202023223196 U CN 202023223196U CN 214043683 U CN214043683 U CN 214043683U
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- photovoltaic cell
- silicon substrate
- emitter
- silicon
- electrodes
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000002161 passivation Methods 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 2
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 42
- 239000000969 carrier Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
The utility model relates to a photovoltaic cell piece and photovoltaic module, wherein, photovoltaic cell piece includes silicon substrate, interval setting at the projecting pole on silicon substrate surface, establishes the metal electrode of projecting pole top, the projecting pole with metal electrode all is the threadiness and sets up, the width of projecting pole is not less than the width of metal electrode. Through the design that the emitter is matched with the metal electrode, on one hand, the carrier recombination loss of the emitter region caused by doping can be reduced, and on the other hand, the total area of the photovoltaic cell piece for receiving illumination can not be influenced while the metal electrode is ensured to fully collect current.
Description
Technical Field
The utility model relates to a photovoltaic technology field especially relates to a photovoltaic cell piece and photovoltaic module.
Background
The most core part of the photovoltaic cell is an emitter, the emitter forms a PN junction in a silicon substrate surface doping mode, namely when the sun shines on a P-N junction of the photovoltaic cell, under the action of an electric field built in the P-N junction, positive holes move to a P area, negative electrons flow to the N area, and current is generated after the metal electrode is connected with a circuit. The emitter 20 'on the silicon substrate 10' of the conventional photovoltaic cell slice at present completely covers the cell surface, and although the current absorption and transmission are facilitated, the auger recombination loss caused by heavy doping can cause the reduction of the cell open-circuit voltage and the conversion efficiency.
Especially, the lifetime of N-type silicon materials is often over 10ms, and the diffusion length of minority carriers (holes) in the silicon body can reach millimeter level. For example, in N-type silicon with a bulk lifetime of 10ms of 2 Ω · cm, the hole diffusion length can reach 3.4mm, which is much longer than the thickness of a silicon wafer and even the spacing between common sub-grids.
SUMMERY OF THE UTILITY MODEL
The utility model provides a photovoltaic cell piece and photovoltaic module solve above-mentioned problem.
In order to achieve the above object, the present invention provides the following technical solutions:
a photovoltaic cell piece comprises a silicon substrate, an emitter arranged on the surface of the silicon substrate at intervals, and a metal electrode arranged above the emitter, wherein the emitter and the metal electrode are linearly arranged, and the width of the emitter is not less than that of the metal electrode.
Further, the distance S between two adjacent emitters satisfies:
wherein D is the diffusion coefficient of the minority carrier in the silicon matrix, and tau is the service life of the minority carrier in the silicon matrix.
Further, the metal electrodes and the emitting electrodes are arranged in one-to-one correspondence.
Further, the projections of the metal electrodes along the thickness direction of the photovoltaic cell slice all fall on the emitter.
Further, the silicon substrate comprises a passivation film which can simultaneously passivate N-type silicon and P-type silicon, the passivation film is arranged between the emitter and a metal electrode and covers the whole surface of the silicon substrate, and the metal electrode penetrates through the passivation film to be in contact with the emitter.
Furthermore, the metal electrode is a fine gate electrode arranged on the silicon substrate, the photovoltaic cell piece further comprises a main gate electrode intersected with the metal electrode, and the main gate electrode is formed by adopting non-fire-through type slurry printing.
Further, the emitter is arranged on the light receiving surface of the silicon substrate, and the silicon substrate and the emitter are different in conduction type.
Further, the conduction type of the silicon substrate is N type, the photovoltaic cell further includes a back passivation anti-reflection layer disposed on the other surface of the silicon substrate away from the emitter, and the back passivation anti-reflection layer includes: a silicon oxide layer, a silicon nitride layer and an N-type doped polysilicon layer which are contacted with the silicon substrate.
The back electrode is arranged on the surface of the N-type doped polycrystalline silicon layer, and the back electrodes and the metal electrodes are arranged in one-to-one correspondence.
The utility model discloses still relate to a photovoltaic module, top-down includes in proper order: the photovoltaic glass, the packaging adhesive film, the photovoltaic cell string, the packaging adhesive film and the isolation layer, wherein the photovoltaic cell string is formed by connecting a plurality of photovoltaic cells.
Compared with the prior art, the beneficial effects of the utility model reside in that: the utility model discloses a photovoltaic cell piece is through setting up local linear projecting pole on silicon substrate surface, and the width of projecting pole is not less than moreover metal electrode's width can reduce the regional carrier composite loss that arouses owing to the doping of projecting pole on the one hand, and on the other hand when guaranteeing that metal electrode fully collects the electric current, can not influence photovoltaic cell piece's the illuminated total area of receipt.
Drawings
Fig. 1 is a schematic view of a planar structure of a photovoltaic cell in an embodiment of the photovoltaic cell of the present invention.
FIG. 2 is a schematic cross-sectional view of the photovoltaic cell sheet in the embodiment of FIG. 1 along the A-A direction.
The solar cell comprises a 10-silicon substrate, a 20-emitter, a 30-metal electrode, a 40-passivation film, a 50-main gate electrode, a 60-back passivation antireflection layer, a 61-silicon oxide layer, a 62-silicon nitride layer, a 63-N type doped polycrystalline silicon layer and a 70-back electrode.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.
In the various drawings of the present invention, certain dimensions of structures or portions may be exaggerated relative to other structural portions for ease of illustration and, thus, are provided only to illustrate the basic structure of the subject matter of the present invention.
As shown in fig. 1 and fig. 2, the photovoltaic cell provided by the present invention includes a silicon substrate 10, an emitter 20 disposed on the surface of the silicon substrate 10 at an interval, and a metal electrode 30 disposed above the emitter 20, wherein the metal electrode 30 is used for collecting current generated by the emitter 20; the emitter 20 and the metal electrode 30 are both arranged in a linear shape, and the width of the emitter 20 is not less than the width of the metal electrode 30. The utility model discloses an emitting electrode 20 adopts the mode of local diffusion to form, can reduce because diffusion doping leads to the combined loss of current carrier in the silicon substrate 10, simultaneously emitting electrode 20 adopts threadlike setting, can ensure emitting electrode 20 absorbs near regional current carrier of emitting electrode 20 with the maximum efficiency in order to form the electric current, does benefit to simultaneously metal electrode 30 of emitting electrode 20 top collects the electric current and derives, the suitable width of metal electrode 30 both can ensure abundant collection electric current, does not influence the irradiant total area of receipt of photovoltaic cell piece again.
When trivalent atoms are doped into the silicon substrate 10 due to the characteristics thereof, redundant holes are gathered to form P-type silicon; when a pentavalent atom is doped into the silicon matrix 10, the excess electrons are gathered to form N-type silicon. When the photovoltaic cell is illuminated, a potential difference, namely a voltage, can be formed between the P-type silicon and the N-type silicon, and electrons and holes directionally move under the action of the voltage to form a current, so that the emitter 20 is arranged on the light receiving surface of the silicon substrate 10, and the silicon substrate 10 and the emitter 20 have different conductive types, which is beneficial for the photovoltaic cell to generate higher open-circuit voltage and short-circuit current.
It is understood that if the silicon substrate 10 is P-type silicon, the emitter 20 is N-type silicon formed by doping pentavalent atoms partially on the surface of the silicon substrate 10, so that a PN junction is formed between the silicon substrate 10 and the emitter 20; similarly, if the silicon substrate 10 is N-type silicon, the emitter 20 is P-type silicon formed by doping trivalent atoms on the silicon substrate 10, so that a PN junction is formed between the emitter 20 and the silicon substrate 10.
The arrangement of the emitters 20 affects the carrier absorption efficiency, the emitters 20 arranged in a linear shape are easy to arrange, and the carrier absorption range of the emitters 20 can cover the whole silicon substrate 10.
In order to satisfy that the emitter 20 can absorb all the carriers in the silicon substrate 10, that is, the carriers in the silicon substrate 10 need to be absorbed by the emitter 20 before recombination, the distance S between two adjacent emitters 20 satisfies:
wherein D is the diffusion coefficient of the minority carrier in the silicon matrix, and tau is the service life of the minority carrier in the silicon matrix; the appropriate spacing between the emitters 20 may be such that carriers are absorbed before they are recombined.
It is understood that the emitter 20 may be a linear type or a curved type as long as the absorption range is satisfied to cover the entire silicon substrate 10; it is within the scope of the present invention that each of the emitters 20 is continuously or intermittently distributed.
As a preferred embodiment of the present invention, the metal electrodes 30 are fine grid electrodes disposed on the silicon substrate 10, and each of the metal electrodes 30 is continuously distributed on the emitter 20.
In this embodiment, the metal electrodes 30 and the emitters 20 are arranged in a one-to-one correspondence, which is beneficial for the metal electrodes 30 to absorb the current generated by the emitters 20, and at this time, the width of the emitters 20 is equal to or slightly greater than the width of the metal electrodes 30. When the width of the emitter 20 is larger than the width of the metal electrode 30 to a certain extent, a plurality of metal electrodes 30 may be disposed on the same emitter 20, so that the metal electrodes 30 can sufficiently collect the current generated by the emitter 20.
It is understood that the metal electrodes 30 and the emitter 20 may be connected in an intersecting manner, and the distance between two adjacent metal electrodes 30 is sufficient to collect all the current.
Further, the projections of the metal electrodes 30 along the thickness direction of the photovoltaic cell all fall on the emitter 20, that is, the length of the metal electrodes 30 is not greater than the length of the emitter 20 corresponding to the length of the metal electrodes, and in combination with the width of the metal electrodes 30, that is, the total area of the metal electrodes 30 is not greater than the total area of the emitter 20, the metal electrodes 30 can not only sufficiently collect the current generated by the emitter, but also increase the area of the metal electrodes 30, so that the total area of the silicon substrate 10 receiving the illumination is ensured, and the usage amount of the slurry can be saved.
As a preferred embodiment of the present invention, the photovoltaic cell further includes a passivation film 40, since the surface of the silicon substrate 10 is partially the emitter 20 and partially the silicon substrate 10, and the conductivity types of the emitter 20 and the silicon substrate 10 are different, the passivation film 40 needs to passivate N-type silicon and P-type silicon simultaneously, so that the minority carrier lifetime of the silicon substrate 10 is the highest and can be fully absorbed by the emitter 20. In this embodiment, the passivation film 40 may be silicon nitride.
Further, the passivation film 40 is disposed between the emitter 20 and the metal electrode 30 and covers the entire surface of the silicon substrate 10, and the metal electrode 30 contacts the emitter 20 through the passivation film. The metal electrode 30 adopts slurry capable of burning through the passivation film 40, so that good ohmic contact is formed between the metal electrode 30 and the emitter 20, and the contact resistance of the whole photovoltaic cell is reduced.
As a preferred embodiment of the present invention, the photovoltaic cell further includes a main gate electrode 50 intersecting the metal electrode 30, for collecting and deriving the current in the metal electrode 30. Preferably, the main gate electrode 50 is formed by printing using a non-fire through type paste, so as to avoid damage to the passivation film 40, thereby ensuring that the lifetime of minority carriers in the silicon substrate 10 is not affected.
As a preferred embodiment of the present invention, the conductivity type of the silicon substrate 10 is N-type, and accordingly, the emitter 20 is P-type. The photovoltaic cell piece further comprises a back passivation antireflection layer 60 arranged on the other surface of the silicon substrate 10, which is opposite to the emitter 20, that is, the passivated antireflection layer 60 and the emitter 20 are respectively arranged on two surfaces of the silicon substrate 10, and the back passivation antireflection layer 60 is positioned on the back surface of the photovoltaic cell piece and is used for passivating the back surface of the silicon substrate 10.
Specifically, the back passivation anti-reflective layer 60 includes: a silicon oxide layer 61, a silicon nitride layer 62 and an N-type doped polysilicon layer 63 which are in contact with the silicon substrate 10. The silicon oxide layer 61 can tunnel electrons in the silicon substrate 10 into the N-type doped polysilicon layer 63, and simultaneously block hole recombination, so that the electrons are laterally transmitted in the N-type doped polysilicon layer 63 and collected, thereby improving the open-circuit voltage and the short-circuit current of the photovoltaic cell.
Further, the photovoltaic cell further comprises a back electrode 70 disposed outside the back passivation anti-reflection layer 60, the back electrode 70 is disposed on the surface of the N-type doped polysilicon layer 63, and the back electrode 70 and the metal electrode 30 are disposed in a one-to-one correspondence manner. The back electrode 70 is used to collect the current generated by the back structure of the photovoltaic cell, and is used as the negative electrode of the photovoltaic cell to connect with the main gate electrode 50 of another photovoltaic cell during the process of manufacturing the photovoltaic cell string.
The utility model discloses still relate to a photovoltaic module, top-down includes in proper order: the photovoltaic glass, the packaging adhesive film, the photovoltaic cell string, the packaging adhesive film and the isolation layer are connected to form the photovoltaic cell string, and therefore the requirements of use of the output open-circuit voltage and the output short-circuit current are met.
Further, the light receiving surface of the photovoltaic cell, that is, the surface having the emitter 20 is disposed adjacent to the photovoltaic glass to receive light, and the back electrode 70 is disposed adjacent to the isolation layer.
To sum up, the utility model discloses a photovoltaic cell piece adopts linear projecting pole 20 that the interval set up, can reduce because diffusion doping leads to the combined loss of current carrier in silicon substrate 10, simultaneously, ensures projecting pole 20 can absorb near regional current carrier of projecting pole 20 with maximum efficiency in order to form the electric current, combine with projecting pole 20 assorted metal electrode 30 does benefit to metal electrode 30 of projecting pole 20 top collects the electric current and derives, the suitable width of metal electrode 30 both can ensure abundant collection electric current, does not influence the irradiant total area of receipt of photovoltaic cell piece again.
It should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art will be able to make the description as a whole, and the embodiments may be appropriately combined to form other embodiments as will be appreciated by those skilled in the art.
The above detailed description of a series of embodiments is only for the purpose of illustration, and is not intended to limit the scope of the invention, which is intended to include all equivalent embodiments or modifications that do not depart from the spirit of the invention.
Claims (10)
1. A photovoltaic cell piece, characterized in that: the silicon substrate comprises a silicon substrate body, emitting electrodes arranged on the surface of the silicon substrate body at intervals and metal electrodes arranged above the emitting electrodes, wherein the emitting electrodes and the metal electrodes are linearly arranged, and the width of the emitting electrodes is not smaller than that of the metal electrodes.
2. The photovoltaic cell sheet of claim 1, wherein: the distance S between two adjacent emitters satisfies the following conditions:
wherein D is the diffusion coefficient of the minority carrier in the silicon matrix, and tau is the service life of the minority carrier in the silicon matrix.
3. The photovoltaic cell sheet of claim 1, wherein: the metal electrodes and the emitting electrodes are arranged in a one-to-one correspondence mode.
4. The photovoltaic cell sheet of claim 1, wherein: and the projections of the metal electrodes along the thickness direction of the photovoltaic cell piece are all arranged on the emitter.
5. The photovoltaic cell sheet of claim 1, wherein: the emitter comprises an emitter and a metal electrode, and the emitter is in contact with the metal electrode through the passivation film.
6. The photovoltaic cell sheet of claim 1, wherein: the photovoltaic cell piece comprises a silicon substrate, a metal electrode, a main gate electrode and a non-burning-through type slurry, wherein the metal electrode is a fine gate electrode arranged on the silicon substrate, the main gate electrode is intersected with the metal electrode, and the main gate electrode is formed by printing the non-burning-through type slurry.
7. The photovoltaic cell sheet of claim 1, wherein: the emitter is arranged on the light receiving surface of the silicon substrate, and the silicon substrate and the emitter are different in conduction type.
8. The photovoltaic cell sheet according to any one of claims 1 to 7, wherein: the conductive type of the silicon substrate is N type, the photovoltaic cell piece further comprises a back passivation anti-reflection layer which is arranged on the silicon substrate and deviates from the other surface of the emitter, and the back passivation anti-reflection layer comprises: a silicon oxide layer, a silicon nitride layer and an N-type doped polysilicon layer which are contacted with the silicon substrate.
9. The photovoltaic cell sheet of claim 8, wherein: the back electrode is arranged on the surface of the N-type doped polycrystalline silicon layer, and the back electrodes are arranged in one-to-one correspondence with the metal electrodes.
10. A photovoltaic module comprises the following components in sequence from top to bottom: photovoltaic glass, encapsulation glued membrane, photovoltaic cell cluster, encapsulation glued membrane, isolation layer, its characterized in that: the photovoltaic cell string is formed by connecting a plurality of photovoltaic cell sheets according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023223196.0U CN214043683U (en) | 2020-12-28 | 2020-12-28 | Photovoltaic cell piece and photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023223196.0U CN214043683U (en) | 2020-12-28 | 2020-12-28 | Photovoltaic cell piece and photovoltaic module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214043683U true CN214043683U (en) | 2021-08-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023223196.0U Expired - Fee Related CN214043683U (en) | 2020-12-28 | 2020-12-28 | Photovoltaic cell piece and photovoltaic module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214043683U (en) |
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2020
- 2020-12-28 CN CN202023223196.0U patent/CN214043683U/en not_active Expired - Fee Related
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Granted publication date: 20210824 Termination date: 20211228 |