CN104037264A - Method for depositing low-surface composite solar cell dielectric layer by means of PECVD (Plasma Enhanced Chemical Vapor Deposition) - Google Patents
Method for depositing low-surface composite solar cell dielectric layer by means of PECVD (Plasma Enhanced Chemical Vapor Deposition) Download PDFInfo
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- 238000000151 deposition Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 28
- 239000002131 composite material Substances 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 230000008021 deposition Effects 0.000 claims abstract description 38
- 238000005215 recombination Methods 0.000 claims abstract description 21
- 230000006798 recombination Effects 0.000 claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000012495 reaction gas Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 235000013842 nitrous oxide Nutrition 0.000 claims description 7
- 230000006641 stabilisation Effects 0.000 claims description 7
- 238000011105 stabilization Methods 0.000 claims description 7
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 abstract 2
- 210000002381 plasma Anatomy 0.000 abstract 2
- 238000005086 pumping Methods 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 238000000746 purification Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000006388 chemical passivation reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for depositing a low-surface composite solar cell dielectric layer by means of PECVD (Plasma Enhanced Chemical Vapor Deposition). The method comprises the following steps: placing a silicon chip which is subjected to cleaning, texture surface making, dispersion and etching into a PECVD cavity, performing vacuum pumping, introducing reaction gas, and applying radio frequency to build up luminance in order to deposit a layer of dielectric layer film being 1-30 nanometers in thickness at a low temperature; performing vacuum pumping once again, raising the deposition temperature, introducing reaction gas after the temperature becomes stable, and applying radio frequency to build up luminance in order to deposit a layer of dielectric layer film being 1-30 nanometers in thickness at a high temperature. In the method, a stepwise variable-temperature deposition way is adopted, and low radio frequency power supply power is used during low-temperature deposition, thereby reducing the bombardment effect of plasmas on the surface of the silicon chip; then high-temperature deposition is performed, high excitation source power is used to increase the production of hydrogen atoms and the diffusion of the hydrogen atoms on the interface of the dielectric film and silicon, and high-energy-density plasmas do not directly act on the surface of the silicon chip under the protection of the low-temperature deposition layer, thereby lowering the surface defect density of the silicon chip, enhancing hydrogen purification, reducing carrier recombination and improving the electrical performance of a solar cell.
Description
Technical field
The present invention relates to the preparation field of crystal-silicon solar cell, be specifically related to a kind of solar cell dielectric layer deposition method.
Background technology
Manufacturing in the process of crystal-silicon solar cell, need to pass through the several main process of cleaning and texturing, diffusion, etching, plated film, silk screen printing and sintering.Wherein, coating process is exactly the dielectric layer film at the silicon chip surface deposition last layer that forms P-N knot with high-k, and its Main Function has three: 1) reduce battery surface reflection of light; 2) diffusion of barrier metal ion and steam; 3) silicon chip surface is carried out to passivation, reduce charge carrier compound.The conventional surface dielectric layer material of crystal-silicon solar cell has hydrogenated amorphous silicon nitride, hydrogenated amorphous silica, amorphous silicon hydride and amorphous alundum (Al2O3) at present.
Surface of crystalline silicon forms a lot of dangling bonds by the interruption of internal crystal framework regular texture, and these dangling bonds excite local energy level to form surface state in being with, and become the complex centre of charge carrier.By in silicon chip surface dielectric layer, make the atom combination in dangling bonds and the film of silicon chip surface, thereby reduce silicon face dangling bonds, reduce surface density of states and silicon face recombination rate, realize the chemical passivation of silicon chip surface.Simultaneously in dielectric layer hydrogeneously in the chemical passivation of silicon chip surface, play vital effect, because hydrogen atom diameter is very little, in thin film deposition or subsequent anneal process, can be diffused into rapidly the interface of dielectric film and silicon, mutually combine with surface silicon dangling bonds, reduce surface state, reduce silicon face recombination rate.
PECVD is plasma enhanced chemical vapor deposition, that a kind of driving source that utilizes makes diluting reaction gas glow discharge produce the technology that plasma is exerted one's influence to chemical vapor deposition processes, the nonequilibrium plasma that glow discharge produces has very high energy, the gas molecule of reaction can be activated, the reaction occurring under script high temperature just can be occurred in the time of low temperature.At present, in crystal-silicon solar cell manufacture process, mainly deposit the dielectric layer of silicon chip surface by radio frequency PECVD technology, but, because plasma has very high-energy, in activated reactive gas molecule, also can cause certain bombardment effect to silicon chip surface, cause silicon slice surface defects to increase, the recombination rate of charge carrier increases, and solar cell electrical property declines.
Summary of the invention
Goal of the invention: the object of the invention is to for the deficiencies in the prior art, provide a kind of PECVD to deposit the method for low surface recombination solar cell dielectric layer, can reduce the silicon slice surface defects density of states, strengthen hydrogen passivation, reduce charge carrier compound.
Technical scheme: a kind of PECVD of the present invention deposits the method for low surface recombination solar cell dielectric layer, comprises the following steps:
(1) silicon chip through cleaning and texturing, diffusion and etching is put into PECVD chamber, after vacuumizing, pass into reacting gas, add radio-frequency starting, radio-frequency power is 2500 ~ 4500W, and depositing temperature is 50 ~ 350 DEG C, the dielectric layer film that deposition a layer thickness is 1 ~ 30nm;
(2) depositing temperature to 350 ~ 650 DEG C that again vacuumize and raise pass into reacting gas after temperature stabilization, add radio-frequency starting, and radio-frequency power is 4500 ~ 8000W, the dielectric layer film that deposition a layer thickness is 50 ~ 100nm.
Because bombardment effect and the hydrogen atom of plasma to silicon chip surface is relevant with high frequency electric source power with depositing temperature in the diffusion of the interface of dielectric film and silicon.Depositing temperature and radio-frequency power supply power are higher, and energy density of plasma is higher, more obvious to the bombardment of silicon chip surface, but to the generation of hydrogen atom with and more favourable in the diffusion of the interface of dielectric film and silicon.Based on above-mentioned principle, the present invention adopts substep alternating temperature depositional mode, first carries out low temperature depositing and uses lower radio-frequency power simultaneously; Carry out high temperature deposition again, use higher radio-frequency power simultaneously, realize the reduction of the silicon slice surface defects density of states and the enhancing of hydrogen passivation, reduce charge carrier compound, promote solar cell electrical property, integrated artistic is simple, wide accommodation.
Further, step (1) vacuumizes after silicon chip is put into PECVD chamber, and cavity indoor pressure is less than 10
-5when Pa, start to pass into reacting gas build-up of luminance, reaction gas flow is 1 ~ 10slm, and deposition pressure is 500 ~ 2500mTorr, and sedimentation time is 10 ~ 500s; Improve compactness and the chemical passivation effect of institute's deposit film by controlling reaction gas flow and deposition pressure, realize needed film thickness by controlling sedimentation time.
Preferably, the described dielectric layer film of step (1) is amorphous silicon nitride, amorphous silica, amorphous silicon or amorphous nickel/phosphorus/aluminium oxide.
Preferably, step (1) reacting gas comprises one or both in silane, ammonia, laughing gas, trimethyl aluminium, aluminium chloride, disilane and oxygen.
Further, step (2) cavity indoor pressure is less than 10
-5when Pa, start to pass into reacting gas build-up of luminance, reaction gas flow is 1 ~ 10slm, and deposition pressure is 500 ~ 2500mTorr, and sedimentation time is 500 ~ 1000s; Improve compactness and the hydrogen passivation effect of institute's deposit film by controlling reaction gas flow and deposition pressure, realize needed film thickness by controlling sedimentation time.
Preferably, described in step (2), dielectric layer film is amorphous silicon nitride or amorphous silica.
Preferably, step (2) reacting gas comprises two kinds in silane, ammonia, laughing gas and disilane.
Beneficial effect: the present invention adopts substep alternating temperature depositional mode, first carries out low temperature depositing and uses lower radio-frequency power supply power simultaneously, reduces the bombardment effect of plasma to silicon chip surface; Carry out again high temperature deposition; use higher driving source power simultaneously; the generation that increases hydrogen atom with and in the diffusion of the interface of dielectric film and silicon; now due to the protection of low temperature depositing layer; high energy-density plasma can't act directly on silicon chip surface; thereby realize the reduction of the silicon slice surface defects density of states and the enhancing of hydrogen passivation, reduce charge carrier compound, promote solar cell electrical property.
Embodiment
Below technical solution of the present invention is elaborated, but protection scope of the present invention is not limited to described embodiment.
embodiment 1:a kind of PECVD deposits the method for low surface recombination solar cell dielectric layer:
After the polysilicon chip that carried out cleaning and texturing, diffusion and etching is put into PECVD chamber, vacuumize, cavity indoor pressure is less than 10
-5when Pa, start to pass into silane and ammonia, mixed gas flow is 6slm, and deposition pressure is 1300mTorr, and depositing temperature is 200 DEG C, adds 3500W radio-frequency starting, and deposition 100s obtains the amorphous silicon nitride films that a layer thickness is 7nm;
The depositing temperature to 500 DEG C that vacuumizes and raise passes into silane and ammonia after temperature stabilization, and mixed gas flow is 8slm, and deposition pressure is 1800mTorr, adds 5500W radio-frequency starting, and deposition 700s obtains the amorphous silicon nitride films that a layer thickness is 76nm.
The polysilicon chip that the multiple polysilicon chips that adopt the present embodiment method to prepare dielectric layer film and common process are prepared to dielectric layer film carries out recombination-rate surface, minority carrier life time and counterfeit open circuit voltage and contrasts, silicon chip average surface recombination rate from 276cm/s be reduced to 132cm/s, average minority carrier lifetime is increased to 26 μ s from 11 μ s, average counterfeit open circuit voltage is increased to 630mV from 615mV.
embodiment 2:pECVD of the present invention deposits the method for low surface recombination solar cell dielectric layer:
After the monocrystalline silicon piece that carried out cleaning and texturing, diffusion and etching is put into PECVD chamber, vacuumize, cavity indoor pressure is less than 10
-5when Pa, start to pass into trimethyl aluminium and oxygen, mixed gas flow is 4slm, and deposition pressure is 1600mTorr, and depositing temperature is 300 DEG C, adds 4000W radio-frequency starting, and deposition 80s obtains the amorphous nickel/phosphorus/aluminium oxide film that a layer thickness is 5nm;
The depositing temperature to 600 DEG C that vacuumizes and raise passes into silane and ammonia after temperature stabilization, and mixed gas flow is 7slm, and deposition pressure is 1600mTorr, adds 5000W radio-frequency starting, and deposition 800s obtains the amorphous silicon nitride films that a layer thickness is 78nm.
The monocrystalline silicon piece that the multiple monocrystalline silicon pieces that adopt the present embodiment method to prepare dielectric layer film and common process are prepared to dielectric layer film carries out recombination-rate surface, minority carrier life time and counterfeit open circuit voltage and contrasts, silicon chip average surface recombination rate is reduced to 96cm/s from 246cm/s, average minority carrier lifetime is increased to 42 μ s from 18 μ s, and average counterfeit open circuit voltage is increased to 675mV from 648mV.
embodiment 3:after the monocrystalline silicon piece that carried out cleaning and texturing, diffusion and etching is put into PECVD chamber, vacuumize, cavity indoor pressure is less than 10
-5when Pa, start to pass into laughing gas and aluminium chloride, mixed gas flow is 1slm, and deposition pressure is 500mTorr, and depositing temperature is 50 DEG C, adds 2500W radio-frequency starting, and deposition 10s obtains the amorphous nickel/phosphorus/aluminium oxide film that a layer thickness is 1nm;
The depositing temperature to 350 DEG C that vacuumizes and raise passes into laughing gas and silane after temperature stabilization, and mixed gas flow is 1slm, and deposition pressure is 500mTorr, adds 4500W radio-frequency starting, and deposition 500s obtains the amorphous SiO_x∶H films that a layer thickness is 50nm.
The polysilicon chip that the multiple polysilicon chips that adopt the present embodiment method to prepare dielectric layer film and common process are prepared to dielectric layer film carries out recombination-rate surface, minority carrier life time and counterfeit open circuit voltage and contrasts, silicon chip average surface recombination rate from 340cm/s be reduced to 230cm/s, average minority carrier lifetime is increased to 23 μ s from 10 μ s, average counterfeit open circuit voltage is increased to 628mV from 612mV.
embodiment 4:after the monocrystalline silicon piece that carried out cleaning and texturing, diffusion and etching is put into PECVD chamber, vacuumize, cavity indoor pressure is less than 10
-5when Pa, start to pass into disilane and oxygen, mixed gas flow is 10slm, and deposition pressure is 2500mTorr, and depositing temperature is 350 DEG C, adds 4500W radio-frequency starting, and deposition 500s obtains the amorphous SiO_x∶H films that a layer thickness is 30nm;
Depositing temperature to 650 DEG C vacuumizes and raises, after temperature stabilization, pass in disilane and laughing gas, mixed gas flow is 10slm, and deposition pressure is 2500mTorr, add 8000W radio-frequency starting, deposition 1000s obtains the amorphous SiO_x∶H films that a layer thickness is 100nm.
The monocrystalline silicon piece that the multiple monocrystalline silicon pieces that adopt the present embodiment method to prepare dielectric layer film and common process are prepared to dielectric layer film carries out recombination-rate surface, minority carrier life time and counterfeit open circuit voltage and contrasts, silicon chip average surface recombination rate is reduced to 85cm/s from 190cm/s, average minority carrier lifetime is increased to 50 μ s from 25 μ s, and average counterfeit open circuit voltage is increased to 680mV from 651mV.
embodiment 5:after the polysilicon chip that carried out cleaning and texturing, diffusion and etching is put into PECVD chamber, vacuumize, cavity indoor pressure is less than 10
-5when Pa, start to pass into silane, mixed gas flow is 5slm, and deposition pressure is 1100mTorr, and depositing temperature is 150 DEG C, adds 3000W radio-frequency starting, and deposition 150s obtains the amorphous silicon membrane that a layer thickness is 10nm;
The depositing temperature to 500 DEG C that vacuumizes and raise passes into ammonia and disilane after temperature stabilization, and mixed gas flow is 6slm, and deposition pressure is 1900mTorr, adds 5000W radio-frequency starting, and deposition 800s obtains the amorphous silicon nitride films that a layer thickness is 81nm.
The polysilicon chip that the multiple polysilicon chips that adopt the present embodiment method to prepare dielectric layer film and common process are prepared to dielectric layer film carries out recombination-rate surface, minority carrier life time and counterfeit open circuit voltage and contrasts, silicon chip average surface recombination rate from 290cm/s be reduced to 215cm/s, average minority carrier lifetime is increased to 24 μ s from 11 μ s, average counterfeit open circuit voltage is increased to 631mV from 616mV.
As mentioned above, although represented and explained the present invention with reference to specific preferred embodiment, it shall not be construed as the restriction to the present invention self.Not departing under the spirit and scope of the present invention prerequisite of claims definition, can make in the form and details various variations to it.
Claims (7)
1. PECVD deposits a method for low surface recombination solar cell dielectric layer, it is characterized in that: comprise the following steps:
(1) silicon chip through cleaning and texturing, diffusion and etching is put into PECVD chamber, after vacuumizing, pass into reacting gas, add radio-frequency starting, radio-frequency power is 2500 ~ 4500W, and depositing temperature is 50 ~ 350 DEG C, the dielectric layer film that deposition a layer thickness is 1 ~ 30nm;
(2) depositing temperature to 350 ~ 650 DEG C that again vacuumize and raise pass into reacting gas after temperature stabilization, add radio-frequency starting, and radio-frequency power is 4500 ~ 8000W, the dielectric layer film that deposition a layer thickness is 50 ~ 100nm.
2. PECVD according to claim 1 deposits the method for low surface recombination solar cell dielectric layer, it is characterized in that: step (1) vacuumizes after silicon chip is put into PECVD chamber, and cavity indoor pressure is less than 10
-5when Pa, start to pass into reacting gas build-up of luminance, reaction gas flow is 1 ~ 10slm, and deposition pressure is 500 ~ 2500mTorr, and sedimentation time is 10 ~ 500s.
3. PECVD according to claim 1 deposits the method for low surface recombination solar cell dielectric layer, it is characterized in that: the described dielectric layer film of step (1) is amorphous silicon nitride, amorphous silica, amorphous silicon or amorphous nickel/phosphorus/aluminium oxide.
4. PECVD according to claim 1 deposits the method for low surface recombination solar cell dielectric layer, it is characterized in that: step (1) reacting gas comprises one or both in silane, ammonia, laughing gas, trimethyl aluminium, aluminium chloride, disilane and oxygen.
5. PECVD according to claim 1 deposits the method for low surface recombination solar cell dielectric layer, it is characterized in that: step (2) cavity indoor pressure is less than 10
-5when Pa, start to pass into reacting gas build-up of luminance, reaction gas flow is 1 ~ 10slm, and deposition pressure is 500 ~ 2500mTorr, and sedimentation time is 500 ~ 1000s.
6. PECVD according to claim 1 deposits the method for low surface recombination solar cell dielectric layer, it is characterized in that: described in step (2), dielectric layer film is amorphous silicon nitride or amorphous silica.
7. PECVD according to claim 1 deposits the method for low surface recombination solar cell dielectric layer, it is characterized in that: step (2) reacting gas comprises two kinds in silane, ammonia, laughing gas and disilane.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057975A (en) * | 2016-07-19 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | PERC solar cell manufacturing method |
| CN108470800A (en) * | 2018-06-06 | 2018-08-31 | 平煤隆基新能源科技有限公司 | A method of reducing PECVD board TMA consumptions |
| CN110699674A (en) * | 2019-10-10 | 2020-01-17 | 湖南红太阳光电科技有限公司 | Method for depositing aluminum oxide by low-frequency PECVD |
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