CN102817011A - Silicon nitride film deposition device and deposition method - Google Patents
Silicon nitride film deposition device and deposition method Download PDFInfo
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- CN102817011A CN102817011A CN2012103276902A CN201210327690A CN102817011A CN 102817011 A CN102817011 A CN 102817011A CN 2012103276902 A CN2012103276902 A CN 2012103276902A CN 201210327690 A CN201210327690 A CN 201210327690A CN 102817011 A CN102817011 A CN 102817011A
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- 238000000151 deposition Methods 0.000 title claims abstract description 75
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 69
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 230000008021 deposition Effects 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- 229910000077 silane Inorganic materials 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005137 deposition process Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000001579 optical reflectometry Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 19
- 230000008569 process Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 150000004767 nitrides Chemical group 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a silicon nitride film deposition device and deposition method. The silicon nitride film deposition device comprises two or more reaction chambers and a cushion chamber connected between the reaction chambers, wherein the reaction chamber and the cushion chamber form vacuum connection. The silicon nitride film deposition method comprises the following steps: sending a silicon wafer base into the silicon nitride film deposition device, continuously passing the silicon wafer base through the reaction chambers and the cushion chamber between the reaction chambers to deposit multiple silicon nitride film layers on the silicon wafer base. Multiple silicon nitride film layers with different thicknesses and refracting indexes are generated in the reaction chambers in multiple steps to further lower the light reflectivity of the silicon wafer surface on the premise of ensuring the passivation effect; the multiple reaction chambers do not interference with each other, thereby ensuring the stable operation of the deposition process; and the reaction chambers are connected by the cushion chamber(s) to ensure the whole deposition process to be performed under vacuum conditions, thereby avoiding contact with extraneous air and introducing impurities.
Description
Technical field
The present invention relates to area of solar cell, in particular to a kind of silicon nitride film depositing device and deposition method.
Background technology
In the production process of polysilicon solar cell, need be to the deposition of the silicon chip surface after diffusion one deck antireflective coating to reduce the reflection that sunshine takes place at silicon chip surface.Characteristics such as silicon nitride film has high chemicalstability, high resistivity, good insulating, hardness is high, optical property is good are widely used on solar cell.As antireflective coating, silicon nitride film has the good optical performance, and its specific refractory power has better anti-reflective effect than traditional silicon-dioxide antireflective coating about 2.0; Simultaneously; Silicon nitride film also has good passivation effect; Can play surface and intravital passivation to second-rate silicon chip; The passivation here is to instigate some atoms or molecule to combine with the unsatisfied chemical bond at silicon slice surface defects place, reduces the recombination probability of minority carrier at this fault location.
In the prior art, have much in the method for solar cell surface silicon nitride film, comprise forming unitary film or multilayer film with board-like PECVD (plasma reinforced chemical vapour deposition).When forming multilayer film, technical process is in a reaction chamber, according to load, the flow process of heating, deposition, cooling, unloading repeats repeatedly, thereby accomplish the deposition of nitride multilayer silicon fiml.There is disadvantage in such technical process:
1) flow process repeats, and is consuming time longer, is not suitable for scale operation;
2) depositing operation of multilayer film is identical in a reaction chamber; Can not reach good anti-reflective effect,, then can make the corresponding process gas phase mutual interference of multilayer film if between different film depositions, change or change technology; And produce frequent the interruption, unrealistic;
3) between different film depositions, the silicon chip of solar cell contacts with extraneous air, can airborne impurity be brought in the solar cell, influences the electrical property of solar cell.
Technology stability and the relatively poor problem of controllability to solar cell surface silicon nitride film in the prior art do not propose effective solution at present as yet.
Summary of the invention
The invention provides a kind of silicon nitride film depositing device and deposition method, to solve the technology stability and the relatively poor problem of controllability of solar cell surface silicon nitride film in the prior art.
According to an aspect of the present invention, a kind of silicon nitride film depositing device is provided, has comprised two or more reaction chambers, and be connected the cushion chamber between the reaction chamber, formed vacuum between reaction chamber and the cushion chamber and be connected.
Further, reaction chamber is connected with vacuum pump through pipeline.
Further, be provided with pressure warning unit in the reaction chamber.
Further, between reaction chamber and the cushion chamber joint flange is installed, joint flange is provided with sealing-ring.
Further, the silicon nitride film depositing device also comprises the carrier that is used for transmission silicon chip matrix in reaction chamber and cushion chamber, and this carrier is a graphite boat, and graphite boat is provided with roller, and is connected with electric motor driving through transmission shaft.
Further, the upstream extremity of depositing device is provided with heating chamber, and the downstream end of depositing device is provided with cooling chamber.
According to another aspect of the present invention; A kind of silicon nitride film deposition method is provided; May further comprise the steps: the silicon chip matrix is sent into above-mentioned silicon nitride film depositing device; Make the silicon chip matrix continuously through the cushion chamber between reaction chamber and the reaction chamber, deposit multilayer silicon nitride film on the silicon chip matrix.
Further, in reaction chamber, adopt PECVD method deposition to generate silicon nitride film.
Further, reaction chamber comprises first reaction chamber and second reaction chamber, and the volume ratio of ammonia and silane is 1: 1～1.5: 1 in first reaction chamber.
Further, gas gross is 800～1000sccm in first reaction chamber, and microwave power is 3500～4500W, and temperature is 350～400 ℃, and pressure is 0.28～0.3mbar, and chip transmission speed is 175～185cm/min.
Further, the volume ratio of ammonia and silane is 3: 1～3.5: 1 in second reaction chamber, and gas gross is 2000～2500sccm; Microwave power is 4200～5200W; Temperature is 350～400 ℃, and pressure is 0.28～0.3mbar, and chip transmission speed is 175～185cm/min.
Use the silicon nitride film depositing device and the deposition method of technical scheme of the present invention, substep generates the multi-layered thickness silicon nitride film different with specific refractory power in a plurality of reaction chambers, can under the prerequisite that guarantees passivation effect, further reduce the silicon chip surface luminous reflectance factor; A plurality of reaction chambers do not disturb mutually, can guarantee deposition process steady running; Adopt cushion chamber to connect between a plurality of reaction chambers, can guarantee that whole deposition process carries out under vacuum condition, thereby avoided contact introducing impurity with extraneous air.The depositing device of silicon nitride film provided by the invention and deposition method; Technology stability, controllability are good, and the nitride multilayer silicon fiml for preparing not only can reduce the interfacial state defect concentration of silicon wafer-based basal surface effectively, reduce photo-generated carrier at silicon wafer-based basal surface compound probability; Guarantee passivation effect; And can reduce the surface light reflectivity, and increase absorption to sunshine, improve the short-circuit current of solar cell; Thereby promote the efficiency of conversion of solar cell, suitable being widely used in the scale operation.
Description of drawings
The Figure of description that constitutes the application's a part is used to provide further understanding of the present invention, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 shows the process flow diagram according to silicon nitride film depositing device of the present invention.
Embodiment
To combine the embodiment of the invention below; Technical scheme of the present invention is carried out detailed explanation; But following embodiment only is in order to understand the present invention; And can not limit the present invention, and embodiment and the characteristic among the embodiment among the present invention can make up each other, and the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
In a kind of exemplary embodiment of the present invention, the silicon nitride film depositing device comprises two or more reaction chambers, and is connected the cushion chamber between the reaction chamber, wherein, forms vacuum between reaction chamber and the cushion chamber and is connected.The setting of a plurality of reaction chambers can generate the multi-layered thickness silicon nitride film different with specific refractory power step by step, can under the prerequisite that guarantees passivation effect, further reduce the silicon chip surface luminous reflectance factor; And a plurality of reaction chambers are separated from each other, do not disturb mutually through cushion chamber, can guarantee deposition process steady running; Form vacuum between reaction chamber and the cushion chamber and is connected, can guarantee that whole deposition process carries out under vacuum condition, thereby avoided contacting introducing impurity with extraneous air.The nitride multilayer silicon fiml that embodiment of the present invention prepares not only can reduce the interfacial state defect concentration of silicon wafer-based basal surface effectively; Reduce photo-generated carrier at silicon wafer-based basal surface compound probability; Guarantee passivation effect, and can reduce the surface light reflectivity, increase absorption sunshine; Improve the short-circuit current (Isc) of solar cell, thereby promote the efficiency of conversion of solar cell.
A kind of preferred embodiment in; A plurality of reaction chambers are connected with vacuum pump through pipeline respectively; In the operational process of silicon nitride film depositing device, through the work of vacuum pump, certain vacuum tightness in a plurality of reaction chambers that guarantee to seal; Thereby needed vacuum environment when realizing the silicon nitride film deposition is avoided the introducing of impurity.
A kind of preferred embodiment in, be provided with pressure warning unit in each reaction chamber, be used for vacuum tightness in the real-time monitoring reaction chamber, to realize real-time monitoring to the sedimentary vacuum environment of silicon nitride film.
A kind of preferred embodiment in, between reaction chamber and the cushion chamber joint flange is installed, joint flange is provided with sealing-ring.Through the butt joint of joint flange, being communicated with between realization response chamber and the cushion chamber, and through sealing-ring is set, having guaranteed that reaction chamber is connected with vacuum-sealing between the cushion chamber, thereby guaranteed the vacuum environment of the sedimentary whole reaction system of silicon nitride film.
A kind of preferred embodiment in; The silicon nitride film depositing device also comprises the carrier that is used for transmission silicon chip matrix in reaction chamber and cushion chamber; This carrier is a graphite boat; Graphite boat is the flat carrier (number of grid generally has 5 * 5,5 * 9 and 5 * 11 3 kinds) by positive square grid group one-tenth that graphite material is processed, and all can just place a slice silicon chip matrix in each grid.Several groups of symmetrical rollers all are equipped with in both sides in reaction chamber or the cushion chamber, and the graphite boat side frames is located on the roller, and roller is connected with the outside electric motor driving of cavity through transmission shaft.Particularly, outside at cavity, between each transmission shaft and with the output shaft of motor between link to each other by belt; When machine operation; Rotate through the belt drives transmission shaft, and then drive the rotation of reaction chamber or cushion chamber internal trolley, the silicon chip matrix is transmitted forward thereby drive graphite boat.Particularly, can pass through PLC (programmable logic controller) control rotating speed of motor, and then the transmission speed of control graphite boat.Through the using PLC automatic control system, can realize accurate control to silicon chip matrix transmission speed.
A kind of preferred embodiment in, the upstream extremity of depositing device is provided with heating chamber, the downstream end of depositing device is provided with cooling chamber.Through heating chamber and cooling chamber are set, realize control and optimization to silicon chip matrix heat temperature raising environment before the silicon nitride film deposition and deposition postcooling cooling environment, further strengthened the stability and the controllability of depositing operation.
According to a further aspect in the invention; The exemplary embodiment of silicon nitride film deposition method may further comprise the steps: the silicon chip matrix is sent into above-mentioned silicon nitride film depositing device; Make the silicon chip matrix continuously through the cushion chamber between reaction chamber and the reaction chamber, deposit multilayer silicon nitride film on the silicon chip matrix.Through a plurality ofly be separated from each other, substep generates the multi-layered thickness silicon nitride film different with specific refractory power in the non-interfering reaction chamber, can farthest bring into play silicon nitride film passivation and antireflecting double effects; And the vacuum environment of whole deposition reaction process has been avoided the introducing of foreign matter effectively.
A kind of preferred embodiment in, in each reaction chamber, adopt PECVD (plasma reinforced chemical vapour deposition) method deposition to generate silicon nitride film.The PECVD method can generate fine and close, uniform silicon nitride film, the controllability of technology and excellent in stability efficiently on the silicon wafer-based surface.
In a kind of concrete embodiment, reaction chamber comprises first reaction chamber and second reaction chamber, wherein; The volume ratio of unstripped gas ammonia and silane is 1: 1～1.5: 1 in first reaction chamber; Gas gross is 800～1000sccm, and microwave power is 3500～4500W, and temperature is 350～400 ℃; Pressure is 0.28～0.3mbar, and chip transmission speed is 175～185cm/min; The volume ratio of ammonia and silane is 3: 1～3.5: 1 in second reaction chamber, and gas gross is 2000～2500sccm, and microwave power is 4200～5200W, and temperature is 350～400 ℃, and pressure is 0.28～0.3mbar, and chip transmission speed is 175～185cm/min.Through in first reaction chamber and second reaction chamber, different raw materials gas proportioning and different parameter being set; Two layers of thickness, silicon nitride film that specific refractory power is different can be made, thereby the silicon chip surface luminous reflectance factor can be under the prerequisite that guarantees passivation effect, further reduced.
Embodiment 1
With being placed on 5 * 5 the graphite boat through the silicon chip matrix of surface corrosion, diffusion, dephosphorization silex glass successively; Open drive-motor; The silicon chip matrix is transmitted heating chamber, first reaction chamber, cushion chamber, second reaction chamber, cooling chamber through depositing device successively, and chip transmission speed is 180cm/min.In first reaction chamber, adopt PECVD method deposition the first layer silicon nitride film, wherein, the volume ratio of ammonia and silane is 1: 1, and gas gross is 800sccm, and microwave power is 3500W, and temperature is 350 ℃, and pressure is 0.28mbar; In second reaction chamber, adopt PECVD method deposition second layer silicon nitride film, wherein, the volume ratio of ammonia and silane is 3: 1, and gas gross is 2000sccm, and microwave power is 4200W, and temperature is 400 ℃, and pressure is 0.3mbar.
After deposition was accomplished, the thickness that test obtains the first layer silicon nitride film was 30nm, and specific refractory power is 2.2; The thickness of second layer silicon nitride film is 50nm, and specific refractory power is 2; The integral thickness of double-deck silicon nitride film is 80nm, and overall refractive index is 2.08.
Test has the short-circuit current of the sedimentary solar cell of above-mentioned double-deck silicon nitride film, and recording short-circuit current is 8.51A.
Embodiment 2
With being placed on 5 * 5 the graphite boat through the silicon chip matrix of surface corrosion, diffusion, dephosphorization silex glass successively; Open drive-motor; The silicon chip matrix is transmitted heating chamber, first reaction chamber, cushion chamber, second reaction chamber, cooling chamber through depositing device successively, and chip transmission speed is 175cm/min.In first reaction chamber, adopt PECVD method deposition the first layer silicon nitride film, wherein, the volume ratio of ammonia and silane is 1.5: 1, and gas gross is 1000sccm, and microwave power is 4500W, and temperature is 400 ℃, and pressure is 0.3mbar; In second reaction chamber, adopt PECVD method deposition second layer silicon nitride film, wherein, the volume ratio of ammonia and silane is 3.5: 1, and gas gross is 2500sccm, and microwave power is 5200W, and temperature is 350 ℃, and pressure is 0.28mbar.
After deposition was accomplished, the thickness that test obtains the first layer silicon nitride film was 35nm, and specific refractory power is 2.3; The thickness of second layer silicon nitride film is 60nm, and specific refractory power is 2.05; The integral thickness of double-deck silicon nitride film is 95nm, and overall refractive index is 2.14.
Test has the short-circuit current of the sedimentary solar cell of above-mentioned double-deck silicon nitride film, and recording short-circuit current is 8.48A.
Embodiment 3
With being placed on 5 * 5 the graphite boat through the silicon chip matrix of surface corrosion, diffusion, dephosphorization silex glass successively; Open drive-motor; The silicon chip matrix is transmitted heating chamber, first reaction chamber, cushion chamber, second reaction chamber, cooling chamber through depositing device successively, and chip transmission speed is 185cm/min.In first reaction chamber, adopt PECVD method deposition the first layer silicon nitride film, wherein, the volume ratio of ammonia and silane is 1.2: 1, and gas gross is 900sccm, and microwave power is 4000W, and temperature is 380 ℃, and pressure is 0.29mbar; In second reaction chamber, adopt PECVD method deposition second layer silicon nitride film, wherein, the volume ratio of ammonia and silane is 3.2: 1, and gas gross is 2250sccm, and microwave power is 4800W, and temperature is 370 ℃, and pressure is 0.29mbar.
After deposition was accomplished, the thickness that test obtains the first layer silicon nitride film was 30nm, and specific refractory power is 2.24; The thickness of second layer silicon nitride film is 56nm, and specific refractory power is 2.06; The integral thickness of double-deck silicon nitride film is 86nm, and overall refractive index is 2.12.
Test has the short-circuit current of the sedimentary solar cell of above-mentioned double-deck silicon nitride film, and recording short-circuit current is 8.5A.
Comparative Examples
With sending in the single reaction chamber through the silicon chip matrix of surface corrosion, diffusion, dephosphorization silex glass successively,, accomplish the deposition of double-deck silicon nitride film according to the flow process repetition twice of loading, heating, deposition, cooling, unloading.
Test has the short-circuit current of the sedimentary solar cell of above-mentioned double-deck silicon nitride film, and recording short-circuit current is 8.45A.
Can find out from the test data of above embodiment and Comparative Examples: the overall refractive index of the silicon nitride film that the depositing operation of the embodiment of the invention 1 to 3 obtains all is slightly larger than 2.0, and such specific refractory power has good antireflecting optical effect; The solar cell of the embodiment of the invention 1 to 3 is in the solar cell of Comparative Examples; Has higher short-circuit current; And the size of short-circuit current has directly reflected the quality of silicon chip surface anti-reflective effect; Therefore, the silicon nitride film that the depositing operation of the embodiment of the invention obtains has better anti-reflective effect, helps obtaining higher photoelectric transformation efficiency.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a silicon nitride film depositing device is characterized in that, comprises two or more reaction chambers, and is connected the cushion chamber between the said reaction chamber, forms vacuum between said reaction chamber and the said cushion chamber and is connected.
2. depositing device according to claim 1 is characterized in that said reaction chamber is connected with vacuum pump through pipeline.
3. depositing device according to claim 2 is characterized in that, is provided with pressure warning unit in the said reaction chamber.
4. depositing device according to claim 2 is characterized in that, between said reaction chamber and the said cushion chamber joint flange is installed, and said joint flange is provided with sealing-ring.
5. depositing device according to claim 1; It is characterized in that also comprise the carrier that is used for transmission silicon chip matrix in said reaction chamber and said cushion chamber, said carrier is a graphite boat; Said graphite boat is provided with roller, and is connected with electric motor driving through transmission shaft.
6. according to each described depositing device in the claim 1 to 5, it is characterized in that the upstream extremity of said depositing device is provided with heating chamber, the downstream end of said depositing device is provided with cooling chamber.
7. silicon nitride film deposition method; It is characterized in that; May further comprise the steps: the silicon chip matrix is sent into like each described silicon nitride film depositing device in the claim 1 to 6; Make said silicon chip matrix continuously through the said cushion chamber between said reaction chamber and the said reaction chamber, deposit multilayer silicon nitride film on said silicon chip matrix.
8. deposition method according to claim 7 is characterized in that, in said reaction chamber, adopts PECVD method deposition to generate silicon nitride film.
9. deposition method according to claim 7 is characterized in that, said reaction chamber comprises first reaction chamber and second reaction chamber, and the volume ratio of ammonia and silane is 1: 1～1.5: 1 in said first reaction chamber.
10. deposition method according to claim 9 is characterized in that, gas gross is 800～1000sccm in said first reaction chamber; Microwave power is 3500～4500W; Temperature is 350～400 ℃, and pressure is 0.28～0.3mbar, and chip transmission speed is 175～185cm/min.
11. deposition method according to claim 9; It is characterized in that the volume ratio of ammonia and silane is 3: 1～3.5: 1 in said second reaction chamber, gas gross is 2000～2500sccm; Microwave power is 4200～5200W; Temperature is 350～400 ℃, and pressure is 0.28～0.3mbar, and chip transmission speed is 175～185cm/min.
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| CN103489961A (en) * | 2013-09-22 | 2014-01-01 | 英利能源（中国）有限公司 | Preparation method of antireflection film, antireflection film and solar cell |
| CN103545197A (en) * | 2013-10-24 | 2014-01-29 | 英利能源（中国）有限公司 | Tube-type PECVD double-layer silicon nitride film preparation process |
| CN104037264A (en) * | 2014-06-12 | 2014-09-10 | 中节能太阳能科技（镇江）有限公司 | Method for depositing low-surface composite solar cell dielectric layer by means of PECVD (Plasma Enhanced Chemical Vapor Deposition) |
| CN107235470A (en) * | 2017-05-26 | 2017-10-10 | 中国计量大学 | A kind of protection technique of wet etching course chips front metal and polycrystalline silicon material |
| CN110359026A (en) * | 2018-03-26 | 2019-10-22 | 东莞新科技术研究开发有限公司 | A kind of processing method of partition |
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