CN101748386A - Plasma processing equipment - Google Patents
Plasma processing equipment Download PDFInfo
- Publication number
- CN101748386A CN101748386A CN 200810240162 CN200810240162A CN101748386A CN 101748386 A CN101748386 A CN 101748386A CN 200810240162 CN200810240162 CN 200810240162 CN 200810240162 A CN200810240162 A CN 200810240162A CN 101748386 A CN101748386 A CN 101748386A
- Authority
- CN
- China
- Prior art keywords
- chamber
- plasma processing
- processing device
- transmission
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The invention provides plasma processing equipment, which comprises a loading chamber, a transmission chamber, N process chambers (N is an integer more than or equal to 1), and an unloading chamber, wherein the transmission chamber is connected in series between the loading chamber and the unloading chamber; the lateral surface of the transmission chamber is parallelly connected with the N process chambers; the transmission chamber can simultaneously transmit workpieces among the parallelly arranged N process chambers by utilizing a vertical transmission part and a horizontal transmission part which are arranged in the transmission chamber; and each process chamber independently completes the whole process, and does not influence one another. Therefore, the plasma processing equipment can improve product quality, save equipment cost and effectively improve equipment capacity.
Description
Technical field
The present invention relates to the workpiece transfer technical field, particularly, relate to a kind of plasma processing device.
Background technology
Current society, the semi-conductor manufacturing has formed perfect market mode.Along with constantly popularizing of semiconductor technology, manufacturing enterprise is faced with more and more drastic competition.Therefore, just need these manufacturing enterprises to utilize equipment capacity substantially, constantly upgrade the efficiency and deal with the market competition that is growing more intense.
In order to utilize equipment capacity substantially, will guarantee that production unit is constantly in running order, and the device free of as far as possible avoiding other links (as, loading and unloading of workpiece etc.) to be caused.
For this reason, people have proposed a kind of plasma processing device that has dual serial processing chamber structure, to enhance productivity.See also a kind of plasma enhanced CVD illustrated in fig. 1 (Plasma Enhanced Chemical Vapor Deposition is hereinafter to be referred as PECVD) equipment.This equipment comprises: loading platform, load chamber, processing chamber A connected in series and processing chamber B, unloading chamber, offload platform.Wherein, the indoor heating module that is provided with of load chamber is in order to pre-heated work pieces; Unloading is provided with refrigerating module in the chamber, the workpiece that processes in order to cooling.
The working process of aforesaid device is as follows: workpiece is loaded onto on the support plate in the loading platform zone, then enter into the indoor warm-up block of load chamber and carry out thermal pretreatment, be transferred into after workpiece reaches the technological temperature requirement and carry out first half technology among the processing chamber A, next workpiece entered and loaded the chamber preheating this moment.When previous workpiece entered processing chamber B and does latter half technology, the workpiece of back then entered processing chamber A and carries out first half technology.Like this, this equipment can be processed two workpiece simultaneously, thereby improve usage ratio of equipment by the processing chamber of dual serial setting and form pipelining.
Yet in actual applications, above-mentioned PECVD equipment was divided into for two steps with a technological process to be finished, and will certainly influence processing quality, and especially in the PECVD thin-film technique, the double-layer films that front and back form can produce tangible separation surface and influence the overall performance of film.And, if be arranged to adopt a processing chamber to finish the structure of whole technological process this equipment, then need all to be equipped with a cover loading, uninstalling system to each processing chamber, this will increase equipment cost greatly, and load chamber and in the most of the time, will be in holding state, cause the waste of device resource with the unloading chamber.
Summary of the invention
For addressing the above problem, the invention provides a kind of plasma processing device, it can improve the quality of products when effectively increasing equipment capacity, saves equipment cost.
For this reason, the invention provides a kind of plasma processing device, comprise and load chamber, a N processing chamber (N is the integer more than or equal to 1), unloading chamber.Plasma processing device provided by the invention also comprises the transmission chamber that is serially connected with between loading chamber and the unloading chamber, the parallel above-mentioned N processing chamber that connects in this transmission chamber side.
The present invention has following beneficial effect:
In plasma processing device provided by the invention, N processing chamber is arranged in the flow production line concurrently and uses jointly that a cover loads, uninstalling system by transmission chamber is set, transmission chamber can be separately one or be N processing chamber transmission workpiece simultaneously, and each processing chamber can independently finish whole production technology, and is unaffected each other.Therefore, this plasma processing device provided by the invention has the following advantages: the high efficiency that has improved equipment capacity and streamline operration effectively; Guarantee the integrity of whole complete processing, thereby improve the quality of products; Improve the plant factor of load/unload chamber, thereby saved equipment cost.
Description of drawings
Fig. 1 is a kind of structured flowchart of common plasma processing device; And
Fig. 2 is the structured flowchart of a kind of plasma processing device provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, plasma processing device provided by the invention is described in detail below in conjunction with accompanying drawing.
See also Fig. 2, plasma processing device provided by the invention, specifically comprise: loading platform, the processing chamber (that is, processing chamber A, B, C) that loads chamber, three parallel settings, unloading chamber, offload platform, and be serially connected with the transmission chamber that loads between chamber and the unloading chamber.Three processing chambers are connected in the side of transmission chamber concurrently, like this, can be separately one by means of the transmission rig of transmission chamber inside or are a plurality of processing chambers transmission workpiece simultaneously.
Wherein, transmission chamber is serially connected with to load and is meant between chamber and the unloading chamber and loadings chamber, transmission chamber and unloading chamber are connected successively and form a kind of serial structure, thereby transmits workpiece via transmission chamber loading chamber, three processing chambers and unload between the chamber.
Here, transmission chamber adopts and overlooks figure is rectangular chamber structure, and its side is rectangular long limit.The structure that it is pointed out that transmission chamber is not limited thereto, when the plan structure of transmission chamber is Polygons, its side then be meant except that with load chamber and unload two faces that chamber is connected other several.In addition, the quantity of processing chamber also is not limited to described three of present embodiment, and its quantity can be N, and N is the integer more than or equal to 1.Certainly, the syndeton of N processing chamber and transmission chamber also is not limited to the situation that only is arranged on transmission chamber one side shown in Figure 2, for example N processing chamber can all be set in the both sides of rectangular transmission chamber, and make it to carry out simultaneously technology.
The transmission rig of transmission chamber by the portion of setting within it is implemented in to load chamber, a N processing chamber and unload between the chamber and transmits workpiece.This transmission rig comprises vertical driving section that the portability workpiece vertically moves, and the laterally mobile horizontal driving section of portability workpiece.It specifically can realize workpiece transfer by multiple type of drive, for example: chain type transmission mechanism, conveyor type transmission rig, roller type transmission rig and/or trolley type transmission rig etc.And vertical driving section and horizontal driving section can be adopted with a kind of type of drive, also can adopt different type of drive respectively, and in the present embodiment, vertically driving section and horizontal driving section all adopt the roller type transmission rig to realize workpiece transfer.
Wherein, laterally the quantity of driving section should be decided on the quantity of processing chamber, and as shown in Figure 2, each organizes the corresponding processing chamber in horizontal driving section, and can carry out independent control to arbitrary group of horizontal driving section.In addition, laterally up-and-down movement also can be done in the driving section, and configuration is for the ease of when not needing lateral transport horizontal driving section being dropped under vertical driving section like this.It is pointed out that vertical driving section can do up-and-down movement equally.
In the plasma processing device provided by the invention, the indoor heating module that is provided with of load chamber is in order to the preheating workpiece to be processed, this heating module has multilayered structure, and each layer all can be used for carrying and heated parts, also can multilayer heat a plurality of workpiece simultaneously, thereby increase work efficiency.
Accordingly, be provided with refrigerating module in the unloading chamber, in order to the cooling workpiece to be processed, this refrigerating module has multilayered structure, and each layer all can be used for carrying and the cooling workpiece, also can multilayer cool off a plurality of workpiece simultaneously, thereby increase work efficiency.
In addition, loading platform is connected with the loading chamber, and offload platform is connected with the unloading chamber.And, be provided with the support plate that is used to carry workpiece on loading platform and the offload platform.
Describe transmission and the course of processing of plasma processing device provided by the present invention below in detail to workpiece.
At first, be placed on the support plate of loading platform after workpiece process cleaning to be processed waits pre-treatment, enter the loading chamber by carrier for bearing afterwards, it is carried out thermal pretreatment by placing the indoor heating module of load chamber.Because heating module has multilayered structure in the present embodiment, carries out preheating simultaneously so can once import a plurality of workpiece into.After treating that workpiece temperature reaches processing requirement, then being imported in the transmission chamber, is example with Fig. 2, has three parallel processing chambers that are provided with and is connected with transmission chamber, suppose the workpiece that all not processing in each chamber this moment, so can in transmission chamber, import three workpiece into.Transmission course is that three workpiece enter transmission chamber successively, carry workpiece by vertical driving section and are along the longitudinal movement; After all workpiece all entered transmission chamber, vertically the driving section stopped to move, and laterally rose on the driving section workpiece to be held up and process along laterally workpiece being sent into processing chamber, and laterally the driving section is fallen into below vertical driving section then; After the technology of certain chamber was finished, corresponding with it horizontal driving section was risen workpiece is spread out of, and workpiece is by vertical driving section carrying and longitudinally import the unloading chamber into when dropping to vertical driving section level height then; Work-piece cools cooling back is spread out of in the unloading chamber, enters offload platform.The transmission course of single workpiece or two workpiece similarly, so be not described in detail in this.
As seen from the above description, plasma processing device provided by the invention is arranged on N processing chamber in same the flow production line concurrently by transmission chamber.Separate between each processing chamber, each processing chamber can both be finished a whole set of technology, has effectively guaranteed complete process.In addition, transmission chamber can be separately one or be N processing chamber transmission workpiece simultaneously, so can effectively improve equipment capacity.And a N common cover loading, the uninstalling system and unaffected each other of using of processing chamber not only improves plant factor in the plasma processing device provided by the invention, also can save a large amount of equipment costs.
The transmission chamber that it is pointed out that plasma processing device provided by the invention can adopt mechanical manipulator as transmission rig, in order to finish the workpiece transfer that transmission precision is had relatively high expectations.In addition, also can only use vertical driving section to finish workpiece transfer in actual applications, for example, can make vertical driving section to lopsidedness, workpiece along inclined direction slides because of gravitate, thereby realizes the lateral transport to workpiece.
It is pointed out that in addition plasma processing device provided by the invention can be applicable to the PECVD production technique, but be not limited thereto, it can be applicable in other automation process flow process equally, manufacture of solar cells technology for example, semiconductor chip fabrication process, TFT panel manufacturing process etc.
Be understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (11)
1. plasma processing device, comprise and load chamber, a N processing chamber, unloading chamber, wherein N is the integer more than or equal to 1, it is characterized in that, described plasma processing device also comprises the transmission chamber that is serially connected with between loading chamber and the unloading chamber, the parallel described N processing chamber that connects in described transmission chamber side.
2. plasma processing device according to claim 1 is characterized in that, the value of N is 3.
3. plasma processing device according to claim 1 is characterized in that, is provided with transmission rig in the described transmission chamber, is used for transmitting workpiece between loading chamber, processing chamber and unloading chamber.
4. plasma processing device according to claim 1 is characterized in that, described transmission rig comprises chain type transmission mechanism, conveyor type transmission rig, roller type transmission rig and/or trolley type transmission rig.
5. plasma processing device according to claim 3 is characterized in that, described transmission rig comprises vertical driving section that the portability workpiece vertically moves, and the laterally mobile horizontal driving section of portability workpiece.
6. plasma processing device according to claim 5 is characterized in that, described horizontal driving section liftable.
7. plasma processing device according to claim 5 is characterized in that, described vertical driving section liftable.
8. plasma processing device according to claim 3 is characterized in that, described transmission rig tiltable is so that workpiece transmits between transmission chamber and processing chamber by the mode of sliding.
9. plasma processing device according to claim 1 is characterized in that, described loading chamber is provided with heating module, and described heating module has multilayered structure, and each layer all can be used for carrying and heated parts.
10. plasma processing device according to claim 1 is characterized in that, described unloading chamber is provided with refrigerating module, and described refrigerating module has multilayered structure, and each layer all can be used for carrying and cooling workpiece.
11. plasma processing device according to claim 1 is characterized in that, also comprises loading platform and offload platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810240162 CN101748386B (en) | 2008-12-18 | 2008-12-18 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810240162 CN101748386B (en) | 2008-12-18 | 2008-12-18 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101748386A true CN101748386A (en) | 2010-06-23 |
| CN101748386B CN101748386B (en) | 2013-06-05 |
Family
ID=42475992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810240162 Active CN101748386B (en) | 2008-12-18 | 2008-12-18 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101748386B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817011A (en) * | 2012-09-06 | 2012-12-12 | 英利能源（中国）有限公司 | Silicon nitride film deposition device and deposition method |
| CN103016657A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Built-in transmission device for PECVD (plasma enhanced chemical vapor deposition) bearing disk cavity |
| CN103474319A (en) * | 2013-09-12 | 2013-12-25 | 武汉新芯集成电路制造有限公司 | Ion implanter reducing grape-shaped defects of wafers |
| CN105316658A (en) * | 2014-07-25 | 2016-02-10 | 奈恩泰克有限公司 | PECVD system |
| CN105986251A (en) * | 2015-02-11 | 2016-10-05 | 上海理想万里晖薄膜设备有限公司 | PECVD system |
| CN113980493A (en) * | 2021-09-30 | 2022-01-28 | 重庆大学 | High-flux hydroxylation method and device for inorganic filler based on low-temperature plasma |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2587883Y (en) * | 2002-12-19 | 2003-11-26 | 铼宝科技股份有限公司 | Deposition equipment for organic illumination assembly |
| US20080099451A1 (en) * | 2006-10-30 | 2008-05-01 | Richard Lewington | Workpiece rotation apparatus for a plasma reactor system |
-
2008
- 2008-12-18 CN CN 200810240162 patent/CN101748386B/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103016657A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Built-in transmission device for PECVD (plasma enhanced chemical vapor deposition) bearing disk cavity |
| CN102817011A (en) * | 2012-09-06 | 2012-12-12 | 英利能源（中国）有限公司 | Silicon nitride film deposition device and deposition method |
| CN102817011B (en) * | 2012-09-06 | 2014-12-31 | 英利能源（中国）有限公司 | Silicon nitride film deposition device and deposition method |
| CN103474319A (en) * | 2013-09-12 | 2013-12-25 | 武汉新芯集成电路制造有限公司 | Ion implanter reducing grape-shaped defects of wafers |
| CN103474319B (en) * | 2013-09-12 | 2015-11-18 | 武汉新芯集成电路制造有限公司 | A kind of ion implantor reducing wafer grape spherical defect |
| CN105316658A (en) * | 2014-07-25 | 2016-02-10 | 奈恩泰克有限公司 | PECVD system |
| CN105316658B (en) * | 2014-07-25 | 2018-04-10 | 奈恩泰克有限公司 | In-line arrangement chemical gas-phase deposition system |
| CN105986251A (en) * | 2015-02-11 | 2016-10-05 | 上海理想万里晖薄膜设备有限公司 | PECVD system |
| CN113980493A (en) * | 2021-09-30 | 2022-01-28 | 重庆大学 | High-flux hydroxylation method and device for inorganic filler based on low-temperature plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101748386B (en) | 2013-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101748386B (en) | Plasma processing equipment | |
| US20080213477A1 (en) | Inline vacuum processing apparatus and method for processing substrates therein | |
| US8758513B2 (en) | Processing apparatus | |
| KR20230029979A (en) | Coating equipment, method, system and solar cell, module, power generation system | |
| WO2021218760A1 (en) | Conveying carrier plate, vacuum coating device, and vacuum coating method | |
| KR20150004131U (en) | A multi-module system for processing thin film photovoltaic devices | |
| JP2020518548A (en) | Curved glass thermoforming apparatus and method | |
| CN102373436B (en) | Substrate holder stocker device, substrate processing apparatus, and substrate holder moving method | |
| CN102969258A (en) | Substrate processing device and substrate conveying device | |
| CN110735125A (en) | PECVD equipment for manufacturing heterojunction solar cell and film coating method | |
| CN107895644B (en) | It is a kind of to expand the production line seeped and production method for heavy rare earth crystal boundary | |
| CN111235552A (en) | Preheating type tubular PECVD (plasma enhanced chemical vapor deposition) equipment and control method thereof | |
| US20090029033A1 (en) | Method of manufacturing thin-film based PV modules | |
| KR102198676B1 (en) | Film forming device | |
| CN112620043B (en) | Vertical thermosetting furnace | |
| CN212770954U (en) | Preheating type tubular PECVD equipment | |
| CN102296285A (en) | Linear array type organic metal compound vapor deposition system and method | |
| CN201834965U (en) | Chemical vapor deposition system used for producing film solar cells | |
| US20200095667A1 (en) | Multi-chamber heat treatment device | |
| CN101624137B (en) | Continuous transportation system with bypass structure and method thereof | |
| TW201114707A (en) | System and method for configuring a glass hardening system capable of transition between configurations for annealing and tempering glass objects | |
| CN112582498A (en) | Method for continuously producing crystalline silicon solar cells | |
| CN210048851U (en) | Heat exchange device and film product production device | |
| CN111796493B (en) | Glue spreading and developing equipment | |
| CN101740343B (en) | High-accuracy composite disk structure and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |