CN111235552A - Preheating type tubular PECVD (plasma enhanced chemical vapor deposition) equipment and control method thereof - Google Patents
Preheating type tubular PECVD (plasma enhanced chemical vapor deposition) equipment and control method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims abstract description 21
- 238000000746 purification Methods 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000007888 film coating Substances 0.000 claims abstract 2
- 238000009501 film coating Methods 0.000 claims abstract 2
- 230000007246 mechanism Effects 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 19
- 238000011068 loading method Methods 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 13
- 239000000969 carrier Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 8
- 239000003638 chemical reducing agent Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 abstract description 12
- 230000006872 improvement Effects 0.000 description 9
- 238000000576 coating method Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000010517 secondary reaction Methods 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 sion x Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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Abstract
The invention discloses a preheating type tubular PECVD device and a control method thereof, the device comprises a feeding sliding table, a purification table, a furnace body cabinet, a gas source cabinet, a vacuum pump and a discharging sliding table, wherein the purification table is used for conveying a substrate and a carrier thereof from the feeding sliding table and the discharging sliding table to a furnace body reaction chamber in the furnace body cabinet, the purification table comprises a preheating conveying area, a carrier conveying area and a cooling area which are sequentially connected, the preheating conveying area is communicated with more than one preheating cavity, the preheating cavity is used for finishing the heating process of the substrate and the carrier thereof from room temperature to a set temperature value, then the substrate and the carrier are conveyed into the preheating conveying area through the carrier conveying area to be subjected to constant temperature and film coating process, and finally the substrate and the carrier are conveyed into the discharging sliding table after being subjected to cooling operation through the. The control method is implemented based on the above-mentioned apparatus. The invention has the advantages of simple structure, reasonable layout, capability of improving the efficiency of the whole machine and the like.
Description
Technical Field
The invention mainly relates to the technical field of photovoltaic equipment, in particular to preheating type tubular PECVD equipment and a control method thereof.
Background
The photovoltaic power generation system is a novel power generation system which directly converts solar radiation energy into electric energy by utilizing the photovoltaic effect of a solar cell semiconductor material. Solar cells, also called photovoltaic cells, are the most central devices in photovoltaic power generation systems. Pecvd (plasma Enhanced Chemical Vapor deposition) is a short term for plasma Enhanced Chemical Vapor technology, and is a major technology for preparing passivation films such as SiOx, AlOx, sion x, SiNx, etc. The preparation method utilizes glow discharge plasma to decompose SiH4 and other gas source molecules, thereby realizing the preparation of the passivation film. The principle is as follows: electrons in the reaction gas are accelerated in an external electric field to obtain energy to perform primary reaction with the reaction gas, so that gas molecules are ionized and decomposed to form plasma. A large number of chemically active ions, neutral atoms and molecular products in the plasma are transported to the film growth surface while undergoing secondary reactions with each other. The various primary reaction products and secondary reaction products reaching the film growth surface are adsorbed by the substrate and react with the surface, and other products are released out at the same time, and finally the film is formed.
The existing tubular PECVD equipment mainly comprises three cabinet bodies, namely a purification table, a furnace body cabinet and a gas source cabinet, wherein after a substrate and a carrier enter a furnace tube reaction chamber of the furnace body cabinet, the substrate and the carrier are heated to a process set temperature value from room temperature, and the existing tubular PECVD equipment has the following defects:
(1) the constant temperature time of a single process accounts for about 45% of the total process time, and a large amount of time is spent on waiting for the temperature of the substrate and the carrier to rise to a set temperature value, so that the production capacity of the equipment is limited.
(2) The requirement for cost reduction and efficiency improvement is met, the size specification of the substrate is larger and larger, the radial size of the furnace tube reaction chamber is increased along with the size specification, the uniformity of the temperature fields of the substrate and the carrier is reduced in the process, and the uniformity index of the thickness of the deposited film is reduced to influence the product performance finally.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the technical problems in the prior art, the invention provides the preheating type tubular PECVD equipment which is simple in structure, reasonable in layout and capable of improving the efficiency of the whole machine and the control method thereof.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a preheat type tubular PECVD equipment, includes material loading slip table, clean bench, furnace body cabinet, air supply cabinet, vacuum pump and unloading slip table, the clean bench is used for accomplishing the transportation between substrate and carrier furnace body reaction chamber from material loading slip table, unloading slip table to the furnace body cabinet, the clean bench is including consecutive preheating transfer area, carrier transmission area and cooling space, it is linked together with more than one preheating chamber to preheat the transfer area, preheating the chamber and being used for accomplishing substrate and carrier and being sent into by the intensification process of room temperature to setting for the temperature value preheating the transfer area, then sending into the furnace body cabinet through carrier transmission area and carrying out constant temperature, coating process, send to the unloading slip table after cooling operation through the cooling space at last.
As a further improvement of the apparatus of the present invention: more than one preheating push rod is arranged in the preheating conveying area, and the preheating push rod conveys the carriers on the preheating push rod to the preheating cavity or takes out the carriers in the preheating cavity through a transmission mechanism.
As a further improvement of the apparatus of the present invention: the preheating push rod is provided with a furnace door which is used for being tightly attached to the preheating cavity to form a closed cavity.
As a further improvement of the apparatus of the present invention: preheating zones with the number corresponding to that of the preheating push rods are arranged in the preheating conveying zone.
As a further improvement of the apparatus of the present invention: the clean bench comprises a first manipulator device, the first manipulator device is used for transferring a carrier after cooling to a discharging tray of a discharging mechanism, and the discharging mechanism conveys the carrier to a discharging platform through a lifting mechanism.
As a further improvement of the apparatus of the present invention: the first manipulator device comprises a motor, a speed reducer, a gear rack transmission, a sliding block and a guide rail and is used for realizing the movement in the directions of a first X axis, a first Y axis and a first Z axis, and realizing the rotation around a fulcrum on an XOZ plane through a cam device, and conveying the carrier on the boat inlet and outlet push rod device into the furnace body reaction chamber or taking out the carrier in the furnace tube reaction chamber.
As a further improvement of the apparatus of the present invention: the cleaning platform comprises a first manipulator device, and the first manipulator device is used for placing a carrier on a feeding platform on a preheating push rod.
As a further improvement of the apparatus of the present invention: the second manipulator device comprises a motor, a speed reducer, a gear rack transmission, a sliding block and a guide rail and is used for realizing the movement in the directions of a second Z axis, a second Y axis and a third Y axis.
As a further improvement of the apparatus of the present invention: a plurality of areas are arranged in the preheating cavity, and each area is independently controlled in temperature.
The invention further provides a control method based on the preheating type tubular PECVD equipment, which comprises the following steps:
s01, conveying the carrier to a feeding platform of the purification platform by a feeding sliding table, ascending the feeding platform to a Z-direction stroke of a second manipulator device through a lifting mechanism, moving the second manipulator device in a second Z-axis direction and a second Y-axis direction, and placing the carrier on a preheating push rod;
s02, the preheating push rod and the carrier move along the second X axis until the furnace door and the preheating cavity are closed, and a preheating process is started to preheat the substrate and the carrier;
s03, when the temperature of the preheating cavity reaches a set value, the preheating push rod together with the carrier exits from the preheating cavity, the second manipulator device moves in the direction of a second Z axis, a second Y axis and a third Y axis, and the carrier is placed on the boat entering and exiting push rod device;
s04, the first mechanical hand device moves in the directions of a first X axis, a first Y axis and a first Z axis, the XOZ plane rotates around a fulcrum, the carriers on the in-out boat push rod device are placed in a constant temperature area in the furnace tube reaction chamber, the in-out boat push rod device exits from the furnace tube reaction chamber, and the furnace door of the furnace tube reaction chamber is closed;
s05, vacuumizing the closed furnace tube reaction chamber, and heating to raise the temperature; when the temperature in the furnace tube reaction chamber reaches a set temperature value, keeping constant temperature, introducing required process gas into the furnace tube reaction chamber, controlling the pressure, keeping constant pressure for a certain time, starting a radio frequency power supply to form plasma, and depositing a passivation film on the surface of a substrate after the process gas reacts;
s06, after the deposition of the passivation film is finished, stopping introducing the process gas and closing the radio frequency power supply, evacuating the residual process gas in the furnace tube reaction chamber, introducing the inert gas to circularly purge, clean and evacuate the furnace tube reaction chamber for multiple times, introducing the inert gas to open the furnace tube reaction chamber door after the pressure in the furnace tube is restored to normal pressure, and closing the reaction chamber door after the carrier is taken out by the boat-in and boat-out push rod device of the first mechanical hand device;
s07, the first manipulator device moves in the first X-axis direction, the first Y-axis direction and the first Z-axis direction, and the carriers on the boat entering and exiting push rod device are placed on the cooling buffer position to be cooled;
and S08, after cooling, placing the carrier on a discharging tray of the discharging mechanism by the first manipulator device, conveying the carrier to a discharging platform by the discharging mechanism through the lifting mechanism, and then transferring the substrate to the next procedure.
Compared with the prior art, the invention has the advantages that:
1. the substrate and the carrier of the invention are preheated before entering the furnace tube reaction chamber, thus improving the initial temperature of the substrate and the carrier, reducing the difference between the initial temperature and the set temperature in the temperature control process during the process, further reducing the heating time in the process, and reducing the total time of the process by 20 percent, thereby greatly improving the production capacity of the equipment.
2. The substrate and the carrier of the invention are preheated before entering the furnace tube reaction chamber, which can improve the uniformity and stability of the temperature field in the furnace tube reaction chamber in the same process time or even shorter time, so that the substrate and the carrier are heated more uniformly, thereby improving the uniformity index of the deposited film thickness of the substrate and the product performance.
3. The invention reasonably utilizes the space of the purification platform, reasonably controls the purification platform through a software program, and preheats by utilizing the time of the carrier waiting to enter the furnace tube reaction chamber without increasing the time before the substrate and the carrier enter the furnace tube reaction chamber in the single process.
Drawings
Fig. 1 is a schematic front view of the present invention.
Fig. 2 is a schematic top view of the present invention.
FIG. 3 is a schematic diagram of a purification stage in an embodiment of the present invention.
FIG. 4 is a schematic cross-sectional view taken along line A-A of the present invention.
FIG. 5 is a schematic diagram of a preheating transfer structure in a specific application example of the present invention.
Fig. 6 is a schematic diagram of the structure of a preheating chamber in another embodiment of the present invention.
Illustration of the drawings:
1. a feeding sliding table; 2. a clean bench; 3. a furnace body cabinet; 4. an air source cabinet; 5. a vacuum pump; 6. a preheating chamber; 7. a preheating transfer zone; 8. a carrier transport zone; 9. a cooling zone; 10. a blanking sliding table; 11. a carrier; 12. a boat inlet and outlet push rod device; 13. a first X axis; 14. cooling the cache bit; 15. a cam device; 16. a first Z axis; 17. a blanking mechanism; 18. a first Y axis; 19. a blanking platform; 20. a four-axis manipulator device; 21. a second Y axis; 22. a second Z axis; 23. a three-axis manipulator device; 24. a third Y axis; 25. a feeding platform; 26. a furnace door; 27. preheating the push rod; 28. the second X axis.
Detailed Description
The invention will be described in further detail below with reference to the drawings and specific examples.
As shown in fig. 1 and fig. 2, the preheating tubular PECVD apparatus of the present invention comprises a loading slipway 1, a clean bench 2, a furnace body cabinet 3, a gas source cabinet 4, a vacuum pump 5, a preheating chamber 6, and a unloading slipway 10, wherein the loading slipway 1 transports a carrier 11 loaded with a substrate in a loading and unloading zone to the clean bench 2 of the apparatus. The purification table 2 mainly provides a clean space for transporting the substrate and the carrier 11 from the feeding sliding table 1 and the discharging sliding table 10 to the furnace reaction chamber. The substrate and the carrier 11 cooled by the blanking sliding table 10 are conveyed to a loading and unloading area, so that the slide glass after the coating process is completed can be conveniently transferred to the next process. The purification table 2 comprises a preheating conveying area 7, a carrier conveying area 8 and a cooling area 9, wherein the preheating cavity 6 is independently arranged and is arranged side by side with the furnace body cabinet 3, is close to the preheating conveying area 7 of the purification table 2 and is used for completing the temperature rising process of the substrate and the carrier 11 thereof from room temperature to a set temperature value. The layout mode can save the space of the whole equipment as much as possible, improve the transmission efficiency, reduce the temperature loss and improve the efficiency of the whole machine. In other embodiments, the preheating chamber 6 may also be integrated into the clean bench 2. The heating mode of the preheating chamber 6 can be selected according to the actual requirement, for example, an infrared lamp tube, a resistance wire or other heating modes are selected.
In a specific application example, the furnace body cabinet 3 is mainly used for placing a heating furnace tube, and the substrate completes the required process in a furnace tube reaction chamber. The gas source cabinet 4 mainly contains components such as a gas circuit system, a radio frequency system, a power distribution system, a vacuum pressure system and the like. The vacuum pump 5 is connected with a vacuum pressure system in the gas source cabinet 4 through a vacuum pipeline, and the furnace tube reaction chamber is vacuumized to reach a set pressure value.
Referring to fig. 3 and 4, in the structure of the clean bench 2 in the specific application example, a first robot (e.g., a four-axis robot 20) and a first robot (e.g., a three-axis robot 23) are included in the clean bench 2.
The four-axis manipulator device 20 includes a motor, a speed reducer, a rack-and-pinion transmission, a slider, and a guide rail, and is used to realize the movement in the directions of the first X axis 13, the first Y axis 18, and the first Z axis 16, and to realize the rotation around the fulcrum on the XOZ plane through the cam device 15, and to accurately transport the carrier 11 on the in-and-out boat pusher device 12 into the furnace tube reaction chamber or take out the carrier 11 in the furnace tube reaction chamber.
The cooling zone 9 is provided with a plurality of cooling buffer locations 14, typically 3-6, depending on the number of furnace reaction chambers. The four-axis manipulator device 20 transfers the cooled carrier 11 to a blanking tray of the blanking mechanism 17, the blanking mechanism 17 can vertically move along the Z-axis direction, and the carrier 11 is conveyed to the blanking platform 19 through the lifting mechanism.
The substrate-loaded carrier 11 on the loading stage 25 of the preheating transfer zone 7 is moved in the vertical direction by the elevating mechanism.
The three-axis manipulator device 23 includes a motor, a speed reducer, a rack-and-pinion transmission, a slider, a guide rail, etc. for realizing the movement in the directions of the second Z axis 22, the second Y axis 21, and the third Y axis 23, and placing the carrier 11 on the loading platform 25 on the preheating push rod 27.
In this particular example, the preheating zone 7 is provided with a plurality of preheating pushrods 27 and a corresponding number of preheating chambers 6, typically 2-4, depending on the number of furnace reaction chambers.
A preheating push rod 27 is arranged in the preheating conveying area 7, the preheating push rod 27 realizes the movement of the second X axis 28 direction through a motor, a speed reducer, a belt pulley, a belt transmission, a slide block and a guide rail, the carrier 11 on the preheating push rod 27 is conveyed into the preheating cavity 6 or the carrier 11 in the preheating cavity 6 is taken out, a furnace door 26 on the preheating push rod 27 is tightly attached to the preheating cavity 6 to form a closed cavity, and the structure is shown in fig. 5.
In a specific application example, the preheating cavity 6 can be further independently subjected to temperature control according to the cavity size in a partition mode, so that the heating control in the cavity is more accurate, the temperature field distribution is more uniform, and the number of the partitions is usually 3-6.
In one embodiment, the number of furnace chambers is typically 4-10, and there are correspondingly 6-20 substrate carriers 11, each of which may be 1-4 carriers 11, and in the illustrated embodiment, 2 carriers 11 per set. The single furnace tube reaction chamber carries out the coating process on the substrates in one set of carriers 11 in each process. The carrier 11 waiting for entering the furnace reaction chamber to start the process is preheated in the preheating zone, and the carrier 11 after the coating process is cooled in the cooling zone 9.
In the above-mentioned embodiment, the structure of the preheating device is of a horizontal push type, and the structure of the preheating device is not limited in practical application, for example, in a vertical loading type as shown in fig. 6, the preheating chamber 6 is fixed on the framework of the purification table 2, the preheating chamber bottom plate 32 is fixed on the slide block 33 of the lifting mechanism, and the substrate and the carrier 11 move vertically along the guide rail 30 along with the preheating chamber bottom plate 32 until the preheating chamber 6 is closed.
The invention further provides a control method based on the preheating type tubular PECVD equipment, which comprises the following steps:
s01, the loading slipway 1 conveys the carrier 11 to the loading platform 25 of the purification platform 2, the loading platform 25 rises to the Z-direction stroke of the three-axis manipulator device 23 through the lifting mechanism, the three-axis manipulator device 23 moves in the directions of the second Z axis 22 and the second Y axis 21, and the carrier 11 is placed on the preheating push rod 27;
s02, the preheating push rod 27 and the carrier 11 move along the second X axis 28 until the oven door 26 and the preheating cavity 6 are closed, and the preheating process is started to preheat the substrate and the carrier 11;
s03, when the temperature of the preheating cavity 6 reaches a set value, the preheating push rod 27 together with the carrier 11 exits from the preheating cavity 6, the three-axis manipulator device 23 moves in the directions of the second Z axis 22, the second Y axis 21 and the third Y axis 24, and the carrier 11 is placed on the boat in-out push rod device 12;
s04, the four-axis manipulator device 20 moves in the directions of a first X axis 13, a first Y axis 18 and a first Z axis 16, the XOZ plane rotates around a fulcrum, the carriers 11 on the in-out boat push rod device 12 are accurately placed in a constant temperature area in the furnace tube reaction chamber, the in-out boat push rod device 12 exits the furnace tube reaction chamber, and the furnace door of the furnace tube reaction chamber is closed;
and S05, vacuumizing the closed furnace tube reaction chamber, and heating to raise the temperature. When the temperature in the furnace tube reaction chamber reaches a set temperature value, keeping constant temperature, introducing required process gas into the furnace tube reaction chamber, controlling the pressure, keeping constant pressure for a certain time, starting a radio frequency power supply to form plasma, and depositing a passivation film on the surface of a substrate after the process gas reacts;
s06, after the deposition of the passivation film is finished, stopping introducing the process gas and closing the radio frequency power supply, evacuating the residual process gas in the furnace tube reaction chamber, introducing the inert gas to circularly purge and clean the furnace tube reaction chamber for multiple times, evacuating, introducing the inert gas to open the furnace tube reaction chamber door after the pressure in the furnace tube is restored to normal pressure, taking out the carrier 11 by the in-out boat push rod device 12 of the four-shaft mechanical arm device 20, and closing the reaction chamber door;
s07, the four-axis robot 20 moves in the first X-axis 13, the first Y-axis 18, and the first Z-axis 16 directions, and the carrier 11 on the boat entering and exiting pusher 12 is placed on the cooling buffer 14 to be cooled;
s08, after the cooling is finished, the four-axis robot 20 places the carrier 11 on the blanking tray of the blanking mechanism 17, and after the blanking mechanism 17 conveys the carrier 11 to the blanking platform 19 through the lifting mechanism, the substrate is transferred to the next process.
(4) Comparison of data of Experimental results
In the experimental process, the same process is operated on the same equipment, and the comparison data are as follows under the condition that the number of substrates is the same and the conditions of other procedures are consistent:
| function(s) | Duration of the process | Uniformity in film thickness | Uniformity between film thickness sheets | Efficiency of battery |
| With preheating | 36 minutes | ±2.1% | ±3.2% | 22.45% |
| Without preheating | 45 minutes | ±2.5% | ±3.95% | 22.41% |
According to experimental test results, the operation time of the preheating type tubular PECVD equipment is reduced by 20%, the production capacity is greatly improved, and the indexes of film thickness uniformity, cell efficiency and the like are improved.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (10)
1. The utility model provides a preheat type tubular PECVD equipment, includes material loading slip table (1), clean bench (2), furnace body cabinet (3), air supply cabinet (4), vacuum pump (5) and unloading slip table (10), clean bench (2) are used for accomplishing the transportation between the furnace body reacting chamber in substrate and carrier (11) follow material loading slip table (1), unloading slip table (10) furnace body cabinet (3), a serial communication port, clean bench (2) are including preheating transfer zone (7), carrier transmission zone (8) and cooling zone (9) that link to each other in proper order, preheat transfer zone (7) and be linked together with more than one preheating chamber (6), preheat chamber (6) and be used for accomplishing substrate and carrier (11) and send into by room temperature to the intensification process of settlement temperature value preheating transfer zone (7), then send into furnace body cabinet (3) through carrier transmission zone (8) and carry out constant temperature, And (3) a film coating process, and finally, the film is sent to a blanking sliding table (10) after being cooled by a cooling area (9).
2. The preheating-type tubular PECVD apparatus of claim 1, wherein more than one preheating push rods (28) are arranged in the preheating conveying zone (7), and the preheating push rods (28) convey the carriers (11) on the preheating push rods (28) into the preheating chamber (6) or take the carriers (11) out of the preheating chamber (6) through a transmission mechanism.
3. The preheating-type tubular PECVD apparatus according to claim 2, wherein the preheating pusher (26) is provided with a furnace door (27), and the furnace door (27) is used for being abutted with the preheating cavity (6) to form a closed chamber.
4. Preheating-type tubular PECVD apparatus according to claim 2 or 3, characterized in that preheating zones corresponding to the number of preheating pushrods (28) are provided in the preheating transfer zone (7).
5. The preheating-type tubular PECVD apparatus according to any one of claims 1 to 3, wherein the clean bench (2) comprises a first robot device for transferring the cooled carrier (11) to a blanking tray of a blanking mechanism (17), and the blanking mechanism (17) conveys the carrier (11) to a blanking platform (19) through a lifting mechanism.
6. The preheating-type tubular PECVD apparatus of claim 5, wherein the first robot device comprises a motor, a speed reducer, a rack-and-pinion transmission, a slide block and a guide rail, and is used for realizing the movement in the directions of a first X axis (13), a first Y axis (18) and a first Z axis (16) and realizing the rotation around a fulcrum on an XOZ plane through a cam device (15), and conveying the carrier (11) on the pusher device (12) of the in-and-out boat into the furnace reaction chamber or taking the carrier (11) in the furnace reaction chamber out.
7. The preheating-type tubular PECVD apparatus according to any of the claims 2 to 3, characterized in that the clean bench (2) comprises a second robot device (23) therein, the second robot device (23) being used to place the carrier (11) on the loading platform (25) on the preheating pusher (28).
8. The preheating-type tubular PECVD apparatus of claim 7, wherein the second robot device (23) comprises a motor, a speed reducer, a rack-and-pinion drive, a slide block and a guide rail for realizing the movement in the directions of the second Z axis (22), the second Y axis (21) and the third Y axis (23).
9. A preheating-type tubular PECVD apparatus according to any of the claims 1 to 3, characterized in that the preheating chamber (6) is provided as a plurality of zones, each zone being individually temperature-controlled.
10. A control method based on the preheating type tubular PECVD apparatus of any of the above claims 1 to 9, characterized in that the process comprises:
s01, the loading sliding table (1) conveys the carrier (11) to a loading platform (25) of the purification table (2), the loading platform (25) rises to a Z-direction stroke of a second manipulator device (23) through a lifting mechanism, the second manipulator device (23) moves in the directions of a second Z-axis (22) and a second Y-axis (21), and the carrier (11) is placed on the preheating push rod (28);
s02, the preheating push rod (28) and the carrier (11) move along the second X axis (28) until the oven door (26) and the preheating cavity (6) are closed, and a preheating process is started to preheat the substrate and the carrier (11);
s03, when the temperature of the preheating cavity reaches a set value, the preheating push rod (27) and the carrier (11) exit from the preheating cavity (6), the second mechanical hand device (23) moves in the directions of a second Z axis (22), a second Y axis (21) and a third Y axis (23), and the carrier (11) is placed on the boat entering and exiting push rod device (12);
s04, the first mechanical hand device (20) moves in the directions of a first X axis (13), a first Y axis (18) and a first Z axis (16), the XOZ plane rotates around a fulcrum, the carriers (11) on the in-out boat push rod device (12) are placed in a constant temperature area in the furnace tube reaction chamber, the in-out boat push rod device (12) withdraws from the furnace tube reaction chamber, and the furnace door of the furnace tube reaction chamber is closed;
s05, vacuumizing the closed furnace tube reaction chamber, and heating to raise the temperature; when the temperature in the furnace tube reaction chamber reaches a set temperature value, keeping constant temperature, introducing required process gas into the furnace tube reaction chamber, controlling the pressure, keeping constant pressure for a certain time, starting a radio frequency power supply to form plasma, and depositing a passivation film on the surface of a substrate after the process gas reacts;
s06, after the deposition of the passivation film is finished, stopping introducing the process gas and simultaneously closing the radio frequency power supply, evacuating residual process gas in the furnace tube reaction chamber, introducing the inert gas to circularly purge and clean the furnace tube reaction chamber for multiple times and evacuate, introducing the inert gas to open the furnace tube reaction chamber door after the pressure in the furnace tube is restored to normal pressure, taking out the carrier (11) by the in-out boat push rod device (12) of the first mechanical arm device (20), and closing the reaction chamber door;
s07, the first manipulator device (20) moves in the directions of a first X axis (13), a first Y axis (18) and a first Z axis (16), and the carrier (11) on the boat entering and exiting push rod device (12) is placed on the cooling buffer position (14) for cooling;
s08, after cooling, placing the carrier (11) on a blanking tray of the blanking mechanism (17) by the first manipulator device (20), conveying the carrier (11) to the blanking platform (19) by the blanking mechanism (17) through the lifting mechanism, and then transferring the substrate to the next process.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010250820.1A CN111235552A (en) | 2020-04-01 | 2020-04-01 | Preheating type tubular PECVD (plasma enhanced chemical vapor deposition) equipment and control method thereof |
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| CN202010250820.1A CN111235552A (en) | 2020-04-01 | 2020-04-01 | Preheating type tubular PECVD (plasma enhanced chemical vapor deposition) equipment and control method thereof |
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| CN111763925A (en) * | 2020-07-04 | 2020-10-13 | 刘永 | Horizontal drive's substrate preprocessing device |
| CN114134482A (en) * | 2021-11-25 | 2022-03-04 | 横店集团东磁股份有限公司 | Crystalline silicon solar cell PECVD back film optimization process |
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