CN111235552A - A kind of preheating type tubular PECVD equipment and its control method - Google Patents
A kind of preheating type tubular PECVD equipment and its control method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 238000011068 loading method Methods 0.000 claims abstract description 20
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- 230000008569 process Effects 0.000 claims description 37
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- 239000007789 gas Substances 0.000 claims description 24
- 230000032258 transport Effects 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 8
- 239000003638 chemical reducing agent Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000033001 locomotion Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
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- 238000004140 cleaning Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
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- 230000006872 improvement Effects 0.000 description 9
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- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010517 secondary reaction Methods 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- -1 SiONx Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
本发明公开了一种预热型管式PECVD设备及其控制方法,该设备包括上料滑台、净化台、炉体柜、气源柜、真空泵以及下料滑台,所述净化台用来完成基片及其载具从上料滑台、下料滑台到炉体柜内炉体反应室之间的输运,所述净化台包括依次相连的预热传送区、载具传输区及冷却区,所述预热传送区与一个以上的预热腔相连通,所述预热腔用于完成基片及其载具由室温到设定温度值的升温过程送入所述预热传送区,然后经载具传输区送入炉体柜进行恒温、镀膜工艺,最后经冷却区进行冷却作业后送至下料滑台。该控制方法基于上述设备来实施。本发明具有结构简单、布局合理、能够提高整机效率等优点。
The invention discloses a preheating tubular PECVD equipment and a control method thereof. The equipment comprises a feeding sliding table, a purification table, a furnace body cabinet, a gas source cabinet, a vacuum pump and a discharging sliding table. The purification table is used for Complete the transportation of the substrate and its carrier from the loading slide table, the unloading slide table to the furnace body reaction chamber in the furnace body cabinet, and the clean table includes a preheating transfer area, a carrier transfer area and A cooling area, the preheating conveying area is communicated with more than one preheating cavity, and the preheating cavity is used to complete the heating process of the substrate and its carrier from room temperature to a set temperature value and send it to the preheating conveying Then, it is sent to the furnace cabinet through the carrier transfer area for constant temperature and coating process, and finally it is sent to the unloading sliding table after cooling operation in the cooling area. This control method is implemented based on the above-mentioned apparatus. The invention has the advantages of simple structure, reasonable layout, and can improve the efficiency of the whole machine.
Description
技术领域technical field
本发明主要涉及到光伏设备技术领域,特指一种预热型管式PECVD设备及其控制方法。The invention mainly relates to the technical field of photovoltaic equipment, in particular to a preheating tubular PECVD equipment and a control method thereof.
背景技术Background technique
光伏发电系统是一种利用太阳能电池半导体材料的“光伏效应”将太阳光辐射能直接转换为电能的一种新型发电系统。太阳能电池,又称光伏电池,是光伏发电系统中最核心的器件。PECVD(Plasma Enhanced Chemical Vapor Deposition)是等离子增强化学气相技术的简称,是目前制备SiOx、AlOx、SiONx、SiNx等钝化膜的一种主要技术。它是利用辉光放电等离子体使SiH4等气源分子分解,从而实现钝化膜的制备。其原理是:反应气体中的电子在外电场中加速获得能量与反应气体发生初级反应,使得气体分子电离分解,从而形成等离子体。等离子体中大量的化学活性的离子、中性原子和分子生成物向薄膜生长表面输运,同时互相之间发生次级反应。到达薄膜生长表面的各种初级反应产物和次级反应产物被衬底吸附,并与表面发生反应,同时其他产物释放出去,最终形成薄膜。Photovoltaic power generation system is a new type of power generation system that uses the "photovoltaic effect" of solar cell semiconductor materials to directly convert solar radiation energy into electrical energy. Solar cell, also known as photovoltaic cell, is the core device in photovoltaic power generation system. PECVD (Plasma Enhanced Chemical Vapor Deposition) is the abbreviation of Plasma Enhanced Chemical Vapor Deposition, which is a main technology for preparing passivation films such as SiOx, AlOx, SiONx, SiNx. It uses glow discharge plasma to decompose SiH4 and other gas source molecules, so as to realize the preparation of passivation film. The principle is: the electrons in the reactive gas are accelerated in an external electric field to obtain energy and have a primary reaction with the reactive gas, so that the gas molecules are ionized and decomposed, thereby forming a plasma. A large number of chemically active ions, neutral atoms and molecular products in the plasma are transported to the film growth surface, and secondary reactions occur with each other at the same time. Various primary and secondary reaction products reaching the film growth surface are adsorbed by the substrate and react with the surface, while other products are released, and finally the film is formed.
现有管式PECVD设备主由有净化台、炉体柜、气源柜三大柜体组成,基片及载具进入炉体柜的炉管反应室后,基片及载具由室温加热到工艺设定温度值,存在的缺点有:The existing tubular PECVD equipment is mainly composed of three cabinets: purification table, furnace cabinet and gas source cabinet. After the substrate and the carrier enter the furnace tube reaction chamber of the furnace cabinet, the substrate and the carrier are heated from room temperature to The disadvantages of the process setting temperature value are:
(1)单次工艺过程恒温时间占总工艺时间约45%,大量时间等待基片及载具温度升高至设定温度值,限制了设备的生产产能。(1) The constant temperature time in a single process accounts for about 45% of the total process time, and a lot of time is spent waiting for the temperature of the substrate and the carrier to rise to the set temperature value, which limits the production capacity of the equipment.
(2)应降本增效要求,基片尺寸规格越来越大,炉管反应室径向尺寸随之增加,工艺过程中基片及载具的温度场均匀性降低,沉积膜厚均匀性指标降低最终影响产品性能。(2) In response to the requirements of cost reduction and efficiency increase, the size of the substrate is getting larger and larger, and the radial size of the furnace tube reaction chamber increases accordingly. During the process, the uniformity of the temperature field of the substrate and the carrier decreases, and the uniformity of the deposited film thickness Indicator reduction ultimately affects product performance.
发明内容SUMMARY OF THE INVENTION
本发明要解决的技术问题就在于:针对现有技术存在的技术问题,本发明提供一种结构简单、布局合理、能够提高整机效率的预热型管式PECVD设备及其控制方法。The technical problem to be solved by the present invention is as follows: in view of the technical problems existing in the prior art, the present invention provides a preheating tubular PECVD equipment and a control method thereof, which has a simple structure, a reasonable layout, and can improve the efficiency of the whole machine.
为解决上述技术问题,本发明采用以下技术方案:In order to solve the above-mentioned technical problems, the present invention adopts the following technical solutions:
一种预热型管式PECVD设备,包括上料滑台、净化台、炉体柜、气源柜、真空泵以及下料滑台,所述净化台用来完成基片及其载具从上料滑台、下料滑台到炉体柜内炉体反应室之间的输运,所述净化台包括依次相连的预热传送区、载具传输区及冷却区,所述预热传送区与一个以上的预热腔相连通,所述预热腔用于完成基片及其载具由室温到设定温度值的升温过程送入所述预热传送区,然后经载具传输区送入炉体柜进行恒温、镀膜工艺,最后经冷却区进行冷却作业后送至下料滑台。A preheating tubular PECVD equipment includes a loading slide table, a clean table, a furnace cabinet, a gas source cabinet, a vacuum pump and a blanking slide table, and the clean table is used to complete the loading and unloading of substrates and their carriers. The transportation between the sliding table and the unloading sliding table to the furnace body reaction chamber in the furnace body cabinet. The clean table includes a preheating conveying area, a carrier conveying area and a cooling area that are connected in sequence. The preheating conveying area is connected to the More than one preheating chamber is connected, and the preheating chamber is used to complete the heating process of the substrate and its carrier from room temperature to a set temperature value and send it to the preheating transfer area, and then send it into the carrier transfer area. The furnace cabinet is subjected to constant temperature and coating processes, and finally it is sent to the unloading sliding table after cooling in the cooling zone.
作为本发明设备的进一步改进:所述预热传送区内设有一根以上的预热推杆,所述预热推杆通过传动机构将预热推杆上的载具运送至预热腔内或将预热腔内的载具取出。As a further improvement of the equipment of the present invention, more than one preheating push rod is arranged in the preheating conveying area, and the preheating push rod transports the carrier on the preheating push rod to the preheating cavity or the preheating cavity through the transmission mechanism. Remove the carrier from the preheating chamber.
作为本发明设备的进一步改进:所述预热推杆上设置有炉门,所述炉门用来与预热腔贴紧形成封闭腔室。As a further improvement of the device of the present invention, a furnace door is provided on the preheating push rod, and the furnace door is used to form a closed chamber in close contact with the preheating chamber.
作为本发明设备的进一步改进:所述预热传送区内设有与预热推杆数量相应的预热区。As a further improvement of the device of the present invention, the preheating conveying zone is provided with a preheating zone corresponding to the number of the preheating push rods.
作为本发明设备的进一步改进:所述净化台内包括第一机械手装置,所述第一机械手装置用来将冷却结束的载具转运到下料机构的下料托盘上,下料机构通过升降机构将载具输送至下料平台。As a further improvement of the equipment of the present invention: the purification table includes a first manipulator device, and the first manipulator device is used to transfer the cooled carrier to the unloading tray of the unloading mechanism, and the unloading mechanism passes through the lifting mechanism. Transport the carrier to the unloading platform.
作为本发明设备的进一步改进:所述第一机械手装置包括电机、减速机、齿轮齿条传动、滑块、导轨,用来实现在第一X轴、第一Y轴、第一Z轴方向的移动,并通过凸轮装置实现绕支点在XOZ平面的转动,将进出舟推杆装置上的载具运送至炉体反应室内或将炉管反应室内的载具取出。As a further improvement of the equipment of the present invention: the first manipulator device includes a motor, a reducer, a rack and pinion drive, a slider, and a guide rail, which are used to realize the first X axis, the first Y axis, and the first Z axis. Move and rotate around the fulcrum in the XOZ plane through the cam device, transport the carrier on the push rod device in and out of the boat into the furnace body reaction chamber or take out the carrier in the furnace tube reaction chamber.
作为本发明设备的进一步改进:所述净化台内包括第二机械手装置,所述第二机械手装置用来将上料平台上的载具放置在预热推杆上。As a further improvement of the equipment of the present invention, the clean table includes a second manipulator device, and the second manipulator device is used to place the carrier on the loading platform on the preheating push rod.
作为本发明设备的进一步改进:所述第二机械手装置包括电机、减速机、齿轮齿条传动、滑块及导轨,用来实现在第二Z轴、第二Y轴、第三Y轴方向的运动。As a further improvement of the device of the present invention: the second manipulator device includes a motor, a reducer, a rack and pinion drive, a slider and a guide rail, which are used to realize sports.
作为本发明设备的进一步改进:所述预热腔内设置设置为多个区域,每个区域单独进行温度控制。As a further improvement of the device of the present invention, the preheating chamber is set up into multiple zones, and each zone is individually temperature controlled.
本发明进一步提供给一种基于上述预热型管式PECVD设备的控制方法,流程包括:The present invention further provides a control method based on the above-mentioned preheating tubular PECVD equipment, the flow comprising:
S01、上料滑台将载具输运到净化台的上料平台,上料平台通过升降机构上升到第二机械手装置的Z方向行程内,第二机械手装置在第二Z轴、第二Y轴方向运动,将载具放置在预热推杆上;S01. The feeding slide table transports the carrier to the feeding platform of the clean table, and the feeding platform is raised to the Z direction stroke of the second manipulator device through the lifting mechanism, and the second manipulator device is on the second Z axis, the second Y axis Motion in the axial direction to place the carrier on the preheating push rod;
S02、预热推杆连同载具沿第二X轴运动,直至炉门与预热腔闭合,启动预热工艺,对基片及载具进行预热;S02, the preheating push rod and the carrier move along the second X-axis until the furnace door and the preheating cavity are closed, start the preheating process, and preheat the substrate and the carrier;
S03、待预热腔温度达到设定值,预热推杆连同载具退出预热腔,第二机械手装置在第二Z轴、第二Y轴、第三Y轴方向运动,将载具放置在进出舟推杆装置上;S03. When the temperature of the preheating chamber reaches the set value, the preheating push rod and the carrier exit the preheating chamber, and the second manipulator moves in the directions of the second Z axis, the second Y axis, and the third Y axis to place the carrier on the On the push rod device for entering and leaving the boat;
S04、第一机械手装置在第一X轴、第一Y轴、第一Z轴方向移动, XOZ平面绕支点转动,将进出舟推杆装置上的载具放置到炉管反应室内的恒温区,进出舟推杆装置退出炉管反应室,关闭炉管反应室炉门;S04, the first manipulator device moves in the directions of the first X axis, the first Y axis and the first Z axis, the XOZ plane rotates around the fulcrum, and the carrier on the push rod device in and out of the boat is placed in the constant temperature zone in the furnace tube reaction chamber, The push rod device entering and leaving the boat exits the furnace tube reaction chamber, and closes the furnace door of the furnace tube reaction chamber;
S05、对密闭的炉管反应室进行抽真空,同时进行加热升温;当炉管反应室内温度达到设定温度值时保持恒温,向炉管反应室内通入所需工艺气体,并对压力进行控制,恒压一定时间后开启射频电源形成等离子体,工艺气体发生反应后在基片表面沉积钝化膜;S05, vacuumize the closed furnace tube reaction chamber, and heat up the temperature at the same time; keep a constant temperature when the temperature in the furnace tube reaction chamber reaches the set temperature value, introduce the required process gas into the furnace tube reaction chamber, and control the pressure , after constant pressure for a certain period of time, the radio frequency power supply is turned on to form plasma, and the passivation film is deposited on the surface of the substrate after the process gas reacts;
S06、沉积钝化膜结束后,停止通入工艺气体同时关闭射频电源,抽空炉管反应室内残余工艺气体,通入惰性气体对炉管反应室进行循环多次吹扫清洗、抽空,再通入惰性气体待炉管内压力恢复到常压后打开炉管反应室炉门,第一机械手装置的进出舟推杆装置将载具取出后,关闭反应室炉门;S06. After depositing the passivation film, stop feeding the process gas and turn off the radio frequency power supply, evacuate the residual process gas in the furnace tube reaction chamber, and introduce inert gas to the furnace tube reaction chamber for multiple times of purging, cleaning, and evacuation, and then feeding into the furnace tube reaction chamber. Open the furnace door of the furnace tube reaction chamber after the inert gas pressure in the furnace tube returns to normal pressure, and close the furnace door of the reaction chamber after the in-out boat pusher device of the first manipulator device takes out the carrier;
S07、第一机械手装置在第一X轴、第一Y轴、第一Z轴方向移动,将进出舟推杆装置上的载具放置在冷却缓存位上进行冷却;S07, the first manipulator moves in the directions of the first X axis, the first Y axis, and the first Z axis, and places the carrier on the push rod device in and out of the boat on the cooling buffer position for cooling;
S08、冷却结束后,第一机械手装置将载具放置在下料机构的下料托盘上,下料机构通过升降机构将载具输送至下料平台后,基片流转到下一工序。S08. After the cooling is completed, the first manipulator device places the carrier on the unloading tray of the unloading mechanism. After the unloading mechanism transports the carrier to the unloading platform through the lifting mechanism, the substrate flows to the next process.
与现有技术相比,本发明的优点在于:Compared with the prior art, the advantages of the present invention are:
1、本发明的基片及载具进入炉管反应室前进行预热处理,提高了基片及载具的初始温度,减少工艺时温度控制过程中的初始温度与设定温度之间的差值,继而减少工艺过程中的升温时间,使得工艺总时长减少20%,从而大幅提高设备的生产产能。1. The substrate and the carrier of the present invention are preheated before entering the furnace tube reaction chamber, which increases the initial temperature of the substrate and the carrier, and reduces the difference between the initial temperature and the set temperature during the temperature control process during the process. value, and then reduce the heating time in the process, so that the total process time is reduced by 20%, thereby greatly improving the production capacity of the equipment.
2、本发明的基片及载具进入炉管反应室前进行预热处理,可在同等工艺时间甚至更短时间内提高了炉管反应室内温度场的均匀性及稳定性得基片及载具受热更加均匀,从而提高基片沉积膜厚均匀性指标及产品性能。2. The substrate and the carrier of the present invention are preheated before entering the furnace tube reaction chamber, which can improve the uniformity and stability of the temperature field in the furnace tube reaction chamber in the same process time or even in a shorter time. It has more uniform heating, thereby improving the uniformity index of substrate deposition film thickness and product performance.
3、本发明的合理利用净化台空间,通过软件程序合理控制,利用载具在等待进入炉管反应室的时间进行预热,不增加单次工艺过程中基片及载具进入炉管反应室之前的时间。3. The rational use of the space of the clean bench in the present invention is reasonably controlled by the software program, and the carrier is used for preheating while waiting to enter the furnace tube reaction chamber, and the substrate and the carrier enter the furnace tube reaction chamber in a single process without increasing. previous time.
附图说明Description of drawings
图1是本发明的主视结构示意图。FIG. 1 is a schematic view of the front structure of the present invention.
图2是本发明的俯视结构示意图。FIG. 2 is a schematic top view of the structure of the present invention.
图3是本发明在具体应用实例中净化台的结构示意图。3 is a schematic structural diagram of a clean bench in a specific application example of the present invention.
图4是本发明中A-A处的截面结构示意图。FIG. 4 is a schematic view of the cross-sectional structure at A-A in the present invention.
图5是本发明在具体应用实例中预热传送结构的示意图。FIG. 5 is a schematic diagram of the preheating conveying structure in a specific application example of the present invention.
图6是本发明在另外一个具体应用实例中预热腔的结构原理示意图。FIG. 6 is a schematic diagram of the structural principle of the preheating chamber in another specific application example of the present invention.
图例说明:illustration:
1、上料滑台;2、净化台;3、炉体柜;4、气源柜;5、真空泵;6、预热腔;7、预热传送区;8、载具传输区;9、冷却区;10、下料滑台;11、载具;12、进出舟推杆装置;13、第一X轴;14、冷却缓存位;15、凸轮装置;16、第一Z轴;17、下料机构;18、第一Y轴;19、下料平台;20、四轴机械手装置;21、第二Y轴;22、第二Z轴;23、三轴机械手装置;24、第三Y轴;25、上料平台;26、炉门;27、预热推杆;28、第二X轴。1. Loading sliding table; 2. Purification table; 3. Furnace cabinet; 4. Gas source cabinet; 5. Vacuum pump; 6. Preheating chamber; 7. Preheating transfer area; 8. Carrier transfer area; 9. Cooling area; 10. Unloading sliding table; 11. Carrier; 12. Push rod device for entering and leaving the boat; 13. The first X-axis; 14. Cooling buffer position; 15. Cam device; 16. The first Z-axis; 17. Blanking mechanism; 18, the first Y axis; 19, blanking platform; 20, four-axis manipulator device; 21, the second Y axis; 22, the second Z axis; 23, three-axis manipulator device; 24, the third Y axis; 25, feeding platform; 26, furnace door; 27, preheating push rod; 28, second X axis.
具体实施方式Detailed ways
以下将结合说明书附图和具体实施例对本发明做进一步详细说明。The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
如图1和图2所示,本发明的预热型管式PECVD设备,包括上料滑台1、净化台2、炉体柜3、气源柜4、真空泵5、预热腔6以及下料滑台10,上料滑台1将装卸片区中已装载好基片的载具11输送到设备的净化台2。净化台2主要提供一个洁净空间,完成基片及其载具11从上料滑台1、下料滑台10到炉体反应室之间的输运。下料滑台10冷却后的基片及载具11输送到装卸片区,便于完成镀膜工艺后的载片流转到下一道工序。所述净化台2包括预热传送区7、载具传输区8及冷却区9,预热腔6采用单独设置方式并与炉体柜3并排,紧邻净化台2的预热传送区7,用于完成基片及其载具11由室温到设定温度值的升温过程。这种布局方式能够最大可能节约整体设备的空间,提高传送效率和减小温度损失,提高整机的效率。在其他实施例中,预热腔6也可以布局集成在净化台2内。预热腔6的加热方式可根据实际需要来选择,例如选用红外灯管、电阻丝或者其它加热方式。As shown in Figures 1 and 2, the preheating tubular PECVD equipment of the present invention includes a loading slide table 1, a clean table 2, a furnace cabinet 3, a gas source cabinet 4, a vacuum pump 5, a preheating
在具体应用实例中,炉体柜3主要放置加热炉管,基片在炉管反应室内完成所需工艺。气源柜4主要放置气路系统、射频系统、配电系统、真空压力系统等部件。真空泵5通过真空管道与气源柜4内的真空压力系统连接,对炉管反应室进行抽真空达到设定压力值。In a specific application example, the furnace body cabinet 3 is mainly placed in the heating furnace tube, and the substrate completes the required process in the furnace tube reaction chamber. The gas source cabinet 4 mainly houses components such as the gas circuit system, the radio frequency system, the power distribution system, and the vacuum pressure system. The vacuum pump 5 is connected to the vacuum pressure system in the gas source cabinet 4 through the vacuum pipeline, and vacuumizes the furnace tube reaction chamber to reach the set pressure value.
参见图3和图4,在具体应用实例中净化台2的结构,净化台2内包括第一机械手装置(如四轴机械手装置20)和第一机械手装置(如三轴机械手装置23)。3 and 4 , in a specific application example of the structure of the clean table 2, the clean table 2 includes a first manipulator device (such as a four-axis manipulator device 20 ) and a first manipulator device (such as a three-axis manipulator device 23 ).
其中,四轴机械手装置20包括电机、减速机、齿轮齿条传动、滑块、导轨,用来实现在第一X轴13、第一Y轴18、第一Z轴16方向的移动,通过凸轮装置15实现绕支点在XOZ平面的转动,精确地将进出舟推杆装置12上的载具11运送至炉管反应室内或将炉管反应室内的载具11取出。Among them, the four-
冷却区9设有多个冷却缓存位14,根据炉管反应室数量,通常为3-6个。四轴机械手装置20将冷却结束的载具11转运到下料机构17的下料托盘上,下料机构17可沿Z轴方向竖直运动,通过升降机构将载具11输送至下料平台19。The cooling zone 9 is provided with a plurality of cooling buffer positions 14, usually 3-6 according to the number of furnace tube reaction chambers. The four-
预热传送区7的上料平台25上的装载好基片的载具11通过升降机构在竖直方向运动。The
其中,三轴机械手装置23包括电机、减速机、齿轮齿条传动、滑块、导轨等,用来实现在第二Z轴22、第二Y轴21、第三Y轴23方向的运动,将上料平台25上的载具11放置在预热推杆27上。Among them, the three-
在该具体实例中,预热传送区7设有多个预热推杆27和相应数量的预热腔6,根据炉管反应室数量,通常为2-4个。In this specific example, the preheating
预热传送区7内设有预热推杆27,预热推杆27通过电机、减速机、皮带轮、皮带传动、滑块、导轨来实现第二X轴28方向运动,将预热推杆27上的载具11运送至预热腔6内或将预热腔6内的载具11取出,预热推杆27上的炉门26与预热腔6贴紧形成封闭腔室,结构如图5所示。The preheating
在具体应用实例中,预热腔6可以进一步根据腔体尺寸分区单独进行温度控制,使得腔室内加热控制更精确,温度场分布更加均匀,分区数量通常为3-6个。In a specific application example, the temperature of the preheating
在具体应用实例中,炉管反应室数量一般为4-10个,相应配备基片载具11为6-20套,每套可以是1-4个载具11,图例中每套2个载具11。单个炉管反应室每次工艺过程中对一套载具11中的基片进行镀膜工艺。等待进入炉管反应室开始工艺的载具11在预热区进行预热处理,镀膜工艺结束的载具11在冷却区9进行冷却处理。In a specific application example, the number of furnace tube reaction chambers is generally 4-10, and the correspondingly equipped
在上述实施例技术方案中预热装置结构为水平推入式,实际应用中不限定预热装置的结构,例如在图6中所示的竖直加载式,预热腔6固定在净化台2的骨架上,预热腔底板32固定在升降机构的滑块33上,基片及载具11随同预热腔底板32沿导轨30竖直运动直至预热腔6封闭。In the technical solutions of the above embodiments, the structure of the preheating device is a horizontal push-in type, and the structure of the preheating device is not limited in practical applications. For example, in the vertical loading type shown in FIG. On the skeleton, the preheating
本发明进一步提供一种基于上述预热型管式PECVD设备的控制方法,流程如下所示:The present invention further provides a control method based on the above-mentioned preheating tubular PECVD equipment, and the flow is as follows:
S01、上料滑台1将载具11输运到净化台2的上料平台25,上料平台25通过升降机构上升到三轴机械手装置23的Z方向行程内,三轴机械手装置23在第二Z轴22、第二Y轴21方向运动,将载具11放置在预热推杆27上;S01. The loading slide table 1 transports the
S02、预热推杆27连同载具11沿第二X轴28运动,直至炉门26与预热腔6闭合,启动预热工艺,对基片及载具11进行预热;S02, the preheating
S03、待预热腔6的温度达到设定值,预热推杆27连同载具11退出预热腔6,三轴机械手装置23在第二Z轴22、第二Y轴21、第三Y轴24方向运动,将载具11放置在进出舟推杆装置12上;S03, the temperature of the preheating
S04、四轴机械手装置20在第一X轴13、第一Y轴18、第一Z轴16方向移动, XOZ平面绕支点转动,精确地将进出舟推杆装置12上的载具11放置到炉管反应室内的恒温区,进出舟推杆装置12退出炉管反应室,关闭炉管反应室炉门;S04, the four-
S05、对密闭的炉管反应室进行抽真空,同时进行加热升温。当炉管反应室内温度达到设定温度值时保持恒温,向炉管反应室内通入所需工艺气体,并对压力进行控制,恒压一定时间后开启射频电源形成等离子体,工艺气体发生反应后在基片表面沉积钝化膜;S05, vacuumize the closed furnace tube reaction chamber, and heat up the temperature at the same time. When the temperature in the furnace tube reaction chamber reaches the set temperature value, keep a constant temperature, pass the required process gas into the furnace tube reaction chamber, and control the pressure. After a certain period of constant pressure, turn on the radio frequency power supply to form plasma. After the process gas reacts Deposit a passivation film on the surface of the substrate;
S06、沉积钝化膜结束后,停止通入工艺气体同时关闭射频电源,抽空炉管反应室内残余工艺气体,通入惰性气体对炉管反应室进行循环多次吹扫清洗、抽空,再通入惰性气体待炉管内压力恢复到常压后打开炉管反应室炉门,四轴机械手装置20的进出舟推杆装置12将载具11取出后,关闭反应室炉门;S06. After depositing the passivation film, stop feeding the process gas and turn off the radio frequency power supply, evacuate the residual process gas in the furnace tube reaction chamber, and introduce inert gas to the furnace tube reaction chamber for multiple times of purging, cleaning, and evacuation, and then feeding into the furnace tube reaction chamber. Open the furnace door of the furnace tube reaction chamber after the inert gas pressure in the furnace tube is restored to normal pressure, and close the furnace door of the reaction chamber after the in-out
S07、四轴机械手装置20在第一X轴13、第一Y轴18、第一Z轴16方向移动,将进出舟推杆装置12上的载具11放置在冷却缓存位14上进行冷却;S07, the four-
S08、冷却结束后,四轴机械手装置20将载具11放置在下料机构17的下料托盘上,下料机构17通过升降机构将载具11输送至下料平台19后,基片流转到下一工序。S08. After cooling, the four-
(4)实验结果数据对比(4) Comparison of experimental results and data
实验过程中在同一设备运行相同工艺,保证基片数量相同、其他工序等条件一致的情况下,其对比数据如下:During the experiment, the same equipment is operated with the same process, and the same number of substrates and the same conditions as other processes are ensured. The comparison data are as follows:
根据实验测试结果得知,预热型管式PECVD设备运行工艺时长减少了20%,大幅提高生产产能,同时膜厚均匀性、电池效率等指标均有所提升。According to the experimental test results, the operating process time of the preheated tubular PECVD equipment is reduced by 20%, which greatly improves the production capacity, and at the same time, the film thickness uniformity and cell efficiency are improved.
以上仅是本发明的优选实施方式,本发明的保护范围并不仅局限于上述实施例,凡属于本发明思路下的技术方案均属于本发明的保护范围。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理前提下的若干改进和润饰,应视为本发明的保护范围。The above are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions that belong to the idea of the present invention belong to the protection scope of the present invention. It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principle of the present invention should be regarded as the protection scope of the present invention.
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