CN101764176A - Method for manufacturing silicon solar cells - Google Patents
Method for manufacturing silicon solar cells Download PDFInfo
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- CN101764176A CN101764176A CN200810225491A CN200810225491A CN101764176A CN 101764176 A CN101764176 A CN 101764176A CN 200810225491 A CN200810225491 A CN 200810225491A CN 200810225491 A CN200810225491 A CN 200810225491A CN 101764176 A CN101764176 A CN 101764176A
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- solar cell
- silicon solar
- manufacture method
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- plasma treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing silicon solar cells, which is characterized by adding the step of H plasma treatment after the step of surface filming. H treatment is carried out in the H2 discharge plasma atmosphere. The H plasma contains a large quantity of H ions which can be combined with various dangling bonds on the surface to saturate the dangling bond defect; in addition, high temperature can lessen the defects such as voids and particles in the silicon. Free surface shrinkage, void removal and crystal defect elimination can reduce free energy of the system so that the system is converted to the more stable state in thermodynamics, thus effectively reducing surface recombination of the cells and improving the conversion efficiency of the solar cells.
Description
Technical field
The present invention relates to a kind of manufacture craft of solar cell, relate in particular to a kind of manufacture method of silicon solar cell.
Background technology
Solar cell mainly is basic the making with the semi-conducting material, and its operation principle is after photoelectric material absorbs luminous energy photoelectron reaction and generation electric current to take place, and what extensively adopt at present is silicon solar cell.
Crystal silicon cell is a kind of of solar cell, and silicon solar cell is a kind of device of minority carrier work.Be mapped to when illumination on the surface of P-N N-type semiconductor N, absorption generation electronics and the hole of light in material is right.In this case, electronics is a minority carrier, and its life-span was defined as from the time of being survived between it produces itself and hole-recombination.The life-span of minority carrier in battery determined the conversion efficiency of battery.Therefore to improve the conversion efficiency of battery, just must manage to reduce minority carrier compound in battery, thus the life-span of increase minority carrier.
In the prior art, the making flow process of solar cell comprises following processing step:
Silicon chip cleaning → surface corrosion → making herbs into wool → diffusion system PN junction → etching → surface filming → electrode printing → low temperature drying → back of the body passivation → high temperature sintering → test stepping etc.;
Wherein, in surface filming technology, use PECVD (plasma enhanced chemical vapor deposition) to carry out the silicon nitride deposition, realize the deposition of antireflective coating, directly enter into next step electrode typography after finishing.
There is following shortcoming at least in above-mentioned prior art:
After the antireflective coating depositing operation finishes, battery surface is because the bombardment of plasma can cause the defective of considerable part, comprise hanging key defect and vacancy defect, thereby it is compound effectively to reduce battery surface, has reduced the conversion efficiency of solar cell to a certain extent.
Summary of the invention
The purpose of this invention is to provide a kind of manufacture method that can improve the silicon solar cell of solar energy converting efficient.
The objective of the invention is to be achieved through the following technical solutions:
The manufacture method of silicon solar cell of the present invention comprises the surface filming step, comprises the H plasma treatment step after the described surface filming step.
As seen from the above technical solution provided by the invention, the manufacture method of silicon solar cell of the present invention, owing to comprise the H plasma treatment step after the surface filming step, it is compound effectively to reduce battery surface, improves the conversion efficiency of solar cell.
Embodiment
The manufacture method of silicon solar cell of the present invention, its preferable embodiment be, comprises the surface filming step, comprises the H plasma treatment step after the surface filming step.
The H plasma treatment step can carry out in PECVD (plasma enhanced chemical vapor deposition) chamber.In the H plasma treatment procedure, used process gas comprises H
2Gas, the pressure of process gas are 10～150Pa, as 50Pa, 100Pa etc.; H
2The flow of gas is 100～1500sccm, as 800sccm, 1000sccm etc.
In the H plasma treatment procedure, used process gas can also comprise inert gas, and as He gas or other inert gas etc., the flow of inert gas can be 100～1500sccm, as 700sccm, and 900sccm etc.The effect of inert gas is to H
2Gas plays the effect of dilution.
In the H plasma treatment procedure, radio-frequency power can be 600～1500w, as 1000w, 1200w etc.; Temperature can be 350～500 ℃, as 400 ℃, 450 ℃ etc.
Above-mentioned surface filming step is included in carries out the silicon nitride deposition in the PECVD chamber, the PECVD chamber here can carry out in same treatment chamber with the H plasma treatment step, carries out successively according to process sequences.Also can use different PECVD chambers or special equipment to carry out the H plasma treatment.Can in the PECVD chamber, directly produce the H plasma, also can in other equipment, produce the H plasma, be introduced into then in the PECVD chamber.
In the surface filming step, used process gas comprises SiH
4, NH3, N2 etc., the pressure of process gas is 10～150Pa, as 50Pa, 100Pa etc.; The flow of process gas is respectively SiH
4100～1500sccm, NH
3100～3000sccm, N
2100～2000sccm is as SiH
4800sccm, NH
31200sccm, N
2800sccm also can select other flow for use.
After the H plasma treatment step, carry out the electrode print steps.
Specific embodiment:
The present invention increases by a step H plasma process and handles after surface filming technology, specific embodiment entire flow technical scheme is as follows:
Silicon chip cleaning → making herbs into wool → diffusion system PN junction → etching → surface filming → H plasma treatment → electrode printing → high temperature sintering → test stepping;
Each processing step is as follows in detail:
Step 1, silicon chip clean
The naked silicon chip that battery production factory has bought, these silicon chips are cleaned to remove greasy dirt, cutting affected layer etc., the solution that uses can adopt 10%～30% aqueous slkali 80～100 ℃ of conditions corrosion 0.5～1min (minute) to reach the effect of removing affected layer, the corrosion rate of this moment can reach 6～10um/min;
Step 2, making herbs into wool
Be used for effectively reducing the reflection of silicon chip surface, desirable surperficial texture (matte) is inverted pyramid shape, and the method for making herbs into wool has a lot, can adopt following several: mechanical carving groove, chemical corrosion, reactive ion etching (RIE), laser grooving etc.
PN junction is made in step 3, diffusion
Concrete manufacture method can be the POCl of nitrogen by liquid state
3(phosphorus oxychloride) is transported to the high temperature semiconductors surface with required impurity with current-carrying gas, the about hundreds of nanometers of the diffusion of impurities degree of depth; And carrying out high-temperature process, the foreign atom of pre-deposition on the surface continues to spread to the matrix depths.
Step 4, etching
The corrosion of employing dry plasma replaces the silicon effect by fluorine and oxygen under the glow discharge condition, and removal contains the periphery of diffusion layer, the silicon nitride film layer that chemical vapor deposition is generated carries out peripheral etching.Except dry plasma, can also adopt following several method: plasma etching, laser ablation, wet etching.
Step 5, antireflection film deposit
The deposit of antireflection film is a crucial step in the solar cell preparation process, this layer film be the more important thing is its passivation except having antireflecting effect, the equipment of use is PECVD, parameter comprises power, pressure, temperature, and SiH
4, NH
3, N
2Deng process gas.Wherein, power is 600～1500w, preferred 1200w; Pressure is 10～150Pa, preferred 50Pa; Temperature is 350～500 ℃, preferred 450 ℃.The flow of process gas is SiH
4100～1500sccm, preferred 800sccm; NH
3100～3000sccm; Preferred 1200sccm; N
2100-2000sccm, preferred 800sccm.
Step 6, H plasma treatment
Behind intact this silicon nitride film of deposit, in the PECVD chamber, the H plasma treatment is carried out to this film in the scene, and parameter comprises power, pressure, temperature, process gas H
2Deng.Wherein, power is 600～1500w, preferred 1200w; Pressure is 10～150Pa, preferred 50Pa; Temperature is 350～500 ℃, preferred 450 ℃; H
2Flow is 100～1500sccm, preferred 800sccm.
The purpose of this step has two: the one, by the H plasma treatment,, thereby improve blemish with the hanging key defect that causes because of plasma bombardment in the saturated silicon nitride deposition process before of H; The 2nd, by high-temperature process, make the unsettled high energy position on silicon nitride film surface migrate to the minimum position of free energy, reduce the defective such as cavity, particle in the silicon.The elimination of the contraction of Free Surface, the eliminating in space, crystal defect etc. all can make the free energy of system reduce, and system transition is a stable status more in the thermodynamics.
Step 7, electrode printing
The preparation of electrode is a crucial step, and it has determined the series resistance of the structure of emitter region and battery and battery surface by plated area.Desirable electrode is less series resistance, little surface coverage.
Step 8, high temperature sintering
The purpose of sintering is the slurry on the dry silicon chip, and the organic component of after-flame slurry makes slurry and silicon chip form good Ohmic contact.
Step 9, test stepping
After battery has been made, the efficient of each battery is tested, carry out stepping according to different efficient, used instrument is an automatic letter sorting machine.
In above-mentioned step 6, in the H plasma treatment, also can use H
2The mixed air of gas and inert gas, for example H
2With the mixed gas of He, other parameters comprise power, pressure, temperature etc.Wherein, power is 600～1500w, preferred 1200w; Pressure is 10～150Pa, preferred 50Pa; Temperature is 350～500 ℃, preferred 450 ℃; H
2Flow is 100～1500sccm, preferred 300sccm, and the He flow is 100～1500sccm, preferred 700sccm.He gas in this combination of gases does not carry out technology, but to H
2Gas plays diluting effect, and other inert gases also can replace He.
The present invention adopts H after the antireflection film deposition is finished
2Carry out the Hization processing in the gas discharge plasma atmosphere, contain a large amount of H ions in the H plasma, these a large amount of H ions can with the various dangling bonds combinations on surface, defectives such as saturated dangling bonds; High temperature can reduce the defective such as cavity, particle in the silicon in addition.The elimination of the contraction of Free Surface, the eliminating in space, crystal defect etc. all can make the free energy of system reduce, and system transition is a stable status more in the thermodynamics.Thereby reach the purpose that improves solar battery efficiency.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1. the manufacture method of a silicon solar cell comprises the surface filming step, it is characterized in that, comprises the H plasma treatment step after the described surface filming step.
2. the manufacture method of silicon solar cell according to claim 1 is characterized in that, described H plasma treatment step carries out in the PECVD chamber.
3. the manufacture method of silicon solar cell according to claim 2 is characterized in that, in the described H plasma treatment procedure, used process gas comprises H
2Gas, the pressure of described process gas are 10～150Pa, described H
2The flow of gas is 100～1500sccm.
4. the manufacture method of silicon solar cell according to claim 3 is characterized in that, the pressure of described process gas is 50Pa, described H
2The flow of gas is 800sccm.
5. the manufacture method of silicon solar cell according to claim 3 is characterized in that, described process gas also comprises inert gas, and the flow of described inert gas is 100～1500sccm.
6. the manufacture method of silicon solar cell according to claim 5 is characterized in that, described inert gas is a He gas, and the flow of described He gas is 700sccm.
7. according to the manufacture method of each described silicon solar cell of claim 3 to 6, it is characterized in that in the described H plasma treatment procedure, radio-frequency power is 600～1500w, temperature is 350～500 ℃.
8. the manufacture method of silicon solar cell according to claim 7 is characterized in that, in the described H plasma treatment procedure, radio-frequency power is 1200w, and temperature is 450 ℃.
9. the manufacture method of silicon solar cell according to claim 2 is characterized in that, described surface filming step is included in carries out the silicon nitride deposition in the described PECVD chamber.
10. the manufacture method of silicon solar cell according to claim 1 is characterized in that, comprises the electrode print steps after the described H plasma treatment step.
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| CN2008102254914A CN101764176B (en) | 2008-11-03 | 2008-11-03 | Method for manufacturing silicon solar cells |
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|---|---|---|---|
| CN2008102254914A CN101764176B (en) | 2008-11-03 | 2008-11-03 | Method for manufacturing silicon solar cells |
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| CN101764176A true CN101764176A (en) | 2010-06-30 |
| CN101764176B CN101764176B (en) | 2011-11-02 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468371A (en) * | 2011-12-15 | 2012-05-23 | 江苏腾晖电力科技有限公司 | Texturing method of quasi-single crystal silicon wafer |
| CN102903785A (en) * | 2011-07-28 | 2013-01-30 | 中国科学院沈阳科学仪器研制中心有限公司 | Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation |
| CN105932076A (en) * | 2016-05-23 | 2016-09-07 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
| CN107644805A (en) * | 2017-08-15 | 2018-01-30 | 中国科学院宁波材料技术与工程研究所 | Hole passivation tunnelling film, preparation method and its application in solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165205A (en) * | 2006-10-18 | 2008-04-23 | 甘国工 | Method and device for coating anti reflection passive film on crystal silicon solar cell sheet |
| CN101281939A (en) * | 2008-05-26 | 2008-10-08 | 江苏天保光伏能源有限公司 | Method for manufacturing high-efficiency silicon solar cell sheet |
-
2008
- 2008-11-03 CN CN2008102254914A patent/CN101764176B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903785A (en) * | 2011-07-28 | 2013-01-30 | 中国科学院沈阳科学仪器研制中心有限公司 | Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation |
| CN102468371A (en) * | 2011-12-15 | 2012-05-23 | 江苏腾晖电力科技有限公司 | Texturing method of quasi-single crystal silicon wafer |
| CN105932076A (en) * | 2016-05-23 | 2016-09-07 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
| CN107644805A (en) * | 2017-08-15 | 2018-01-30 | 中国科学院宁波材料技术与工程研究所 | Hole passivation tunnelling film, preparation method and its application in solar cell |
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| Publication number | Publication date |
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| CN101764176B (en) | 2011-11-02 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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