CN107644805A - Hole passivation tunnelling film, preparation method and its application in solar cell - Google Patents
Hole passivation tunnelling film, preparation method and its application in solar cell Download PDFInfo
- Publication number
- CN107644805A CN107644805A CN201710694413.8A CN201710694413A CN107644805A CN 107644805 A CN107644805 A CN 107644805A CN 201710694413 A CN201710694413 A CN 201710694413A CN 107644805 A CN107644805 A CN 107644805A
- Authority
- CN
- China
- Prior art keywords
- film
- hole
- silicon
- silicon nitride
- passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Abstract
It is silicon nitride (SiNx) the invention discloses a kind of hole passivation tunnelling film main component, film thickness is 0.5 3nm, silicon nitride property is stable, high temperature resistant, be advantageous to integrated high-temperature process, and there is good chemical passivation effect to crystal silicon surface, wherein the electron affinity energy of silicon nitride is 1.71eV, energy gap is 5.31eV, conduction band band rank with silicon is 2.34eV, Valence-band Offsets 1.85eV, the tunneling barrier in hole nearly 1eV lower than the tunneling barrier of electronics, is advantageous to the selective tunnelling to hole；In addition silicon nitride has good impurity blocking capability, advantageously reduces the interior diffusion of impurity in hole selection layer material or other functional layers, keeps the cleanliness factor of interface and body silicon；It is simple to operate present invention employs the ultra-thin silicon nitride film that plasmaassisted or hot assisted atomic layer deposition method cvd nitride silicon thin film can obtain the thickness and thickness has optimal tunneling efficiency in below 3nm silicon nitride film.
Description
Technical field
The present invention relates to a kind of thin-film material, is passivated tunnel layer more particularly, to a kind of hole, while be related to its preparation side
Method and the application in solar cell.
Background technology
In recent years, carrier selectively passivation contact heterojunction crystal silicon battery turned into the focus of photovoltaic art research.Passing
In crystal silicon battery of uniting, the method crystal silicon matrix surface typically adulterated by high temperature thermal diffusion forms PN junction, so as to using in PN junction
Build the separation that electric field realizes carrier.Carrier selectively passivation contact heterojunction crystal silicon battery, then be by crystal silicon matrix
Selective transport layer is inserted between electrode to realize that carrier selectively transports, i.e., electron transfer layer allows electronics to pass through and arrange
Denounce hole, hole transmission layer allows hole by repelling electronics, so as to realizing the separation of carrier.Meanwhile selectivity transmission
Layer also provides good surface passivation for crystal silicon matrix.
Compared to traditional PN junction crystal silicon battery, carrier selectively passivation contact heterojunction crystal silicon battery has three uniquenesses
Advantage：First, avoid using heavily doped layer, can effectively eliminate heavily doped layer and bring recombination losses；2nd, using different carriers
Collection material, it can more adjust the band structure of hetero-junctions, reduce parasitic optical absorption；3rd, the load of gross area is realized
Stream is collected, and effectively reduces carrier transport distance.Therefore, this kind of solar cell can obtain higher open-circuit voltage, short circuit
Electric current, fill factor, curve factor, lift the overall performance of battery.Wherein selectivity passivation transport layer is selected by passivation tunneling material and carrier
Selecting property contact material forms.For requiring to include for passivation tunneling material：With good surface passivation performance, accurate thickness
Control growth, very high carrier selectivity etc..From the point of view of having been reported, typically made using hydrogenated intrinsic non-crystalline silicon and silica
It is not preferable hole passivation tunnel although both is highly suitable as electronics passivation tunnel layer to be passivated tunneling material
Wear layer.The passivation tunnel layer in hole is wherein done using amorphous silicon hydride, it is main the problem of include：
A. the band gap of non-crystalline silicon is 1.7eV, and its electron affinity energy is 3.9eV, conduction band band rank and Valence-band Offsets with crystal silicon
Respectively 0.15eV and 0.45eV；Non-crystalline silicon is not high to the selectivity in hole；B. amorphous silicon material non-refractory, can not be compatible high
Warm handling process, very big limitation is produced to follow-up battery preparation technique；C. (plasma strengthens non-crystalline silicon generally use PECVD
Chemical vapor deposition) prepared by method, very high to crystal silicon surface quality requirements, and it is larger to obtain the difficulty of high-quality amorphous silicon, work
Skill stability is difficult to ensure that；
And silica (SiOx) is used problem to be similarly present, because the electronics of silica as hole passivation tunnel layer
Affine can be 1eV, energy gap 8.9eV, and the conduction band band rank with crystal silicon is 3.05eV, Valence-band Offsets 4.75eV；For sky
For cave, potential barrier is too big, and the efficiency of tunnelling is restricted, if it is desired that the efficiency of tunneled holes is optimal, therefore, to assure that silica
The thickness of layer can not still obtain with existing technology of preparing below the 0.8nm of uniform high quality silica in below 0.8nm
Film.
The content of the invention
In order to solve the above technical problems, the present invention provides a kind of film for being advantageous to hole selectivity tunnelling.
The technical scheme is that provide a kind of hole passivation tunnelling film, main constituents are silicon nitride, film
Thickness is 0.5-3nm.
Further, the refractive index of the hole passivation tunnelling film is 1.8-2.5, to ensure that thin film silicon nitride reaction is abundant
So as to ensure the hole of film passivation tunnelling effect.
The present invention also provides the preparation method of above-mentioned hole passivation tunnelling film, using plasma auxiliary (Plasma) or
Heat auxiliary (Thermal) ald (ALD) method cvd nitride silicon thin film.
Further, the Atomic layer deposition method comprises the following steps：
S1. siliceous precursor molecule is passed through, siliceous intermediate product is generated in silicon chip surface；
S2. inert gas is passed through to be cleaned；
S3. nitrogenous precursor molecule is passed through, nitridation generation silicon nitride film is carried out to siliceous intermediate product.
It can be carried out according to step S1-S3 reiteration.
Above-mentioned Atomic layer deposition method reaction temperature is 50-500 DEG C.
Further, siliceous precursor molecule is chlorosilane gas in step S1, and the chlorosilane gas is
SiCl4、SiH2Cl2、Si2Cl6In one or more.
Further, nitrogenous precursor molecule is NH in step S33、N2H4One or both of.
Further, to the silicon nitride film hydrogen plasma process of generation, the method for producing hydrogen plasma is height
Frequently (13.56MHz) or microwave (2.45GHz) PECVD method (PECVD).
Further, the thickness for preparing the silicon nitride film of gained is 0.5-3nm, refractive index 1.8-2.5, passes through control
The flow of precursor molecule controls refractive index, and the flow of nitrogenous precursor molecule controlled in 20-100sccm.
The invention discloses application of the above-mentioned hole passivation tunnelling film in crystal silicon solar battery.
The advantages of the present invention：Hole passivation tunnelling thin film composition be silicon nitride (SiNx), its property stably,
High temperature resistant itself, be advantageous to integrated high-temperature process；Silicon nitride has good chemical passivation effect, wherein silicon nitride to crystal silicon surface
Electron affinity energy be 1.71eV, energy gap 5.31eV, the conduction band band rank with silicon is 2.34eV, Valence-band Offsets are
1.85eV, the tunneling barrier in hole nearly 1eV lower than the tunneling barrier of electronics, is advantageous to the selective tunnelling to hole；
In addition silicon nitride has good impurity blocking capability, advantageously reduces impurity in hole selection layer material or other functional layers
Interior diffusion, keep the cleanliness factor of interface and body silicon；And thickness has optimal tunneling efficiency in below 3nm silicon nitride film, adopt
The ultra-thin silicon nitride film of the thickness can be obtained with preparation method of the present invention, it is simple to operate.
Brief description of the drawings
Fig. 1 is current-voltage (I-V) relation schematic diagram of the silicon chip for the silicon nitride film for depositing different-thickness.
Embodiment
With reference to embodiment, the invention will be further described.
In order to explain advantages of the present invention, some examples below are described using method proposed by the present invention and with known
Method prepares passivation contact solar cell.Selected 0.5-10 Ω cm n-type monocrystalline silicon piece is substrate.
Embodiment 1
The passivation prepared using the preparation method of the present invention using silicon nitride film as tunneled holes layer contacts solar cell.
Thermal ALD methods：First, the n-type monocrystalline silicon piece cleaned up with RCA standard technologies is placed into ald chamber body, takes out chamber
Body vacuum is to 10-6More than Torr, while cavity is heated to 430 DEG C.With SiCl4And NH3For presoma, SiCl is passed first into4Steam
Vapour 1 second, the nitrogen 30 seconds that flow is 100sccm is then passed to, 60sccm ammonia is then passed through 5 seconds, is finally passed through
The nitrogen that flow is 100sccm 30 seconds, this is a circulation.By the processing of 12 circulations, you can be obtained in silicon chip surface
3nm silicon nitride film is obtained, the refractive index of presoma obtained silicon nitride film under the flow is 2.0.
Then upper surface continues to use PECVD methods, deposits the boron-doping p of 10nm thickness+Non-crystalline silicon, as hole selectivity
Contact layer, detailed process are：Sample is put into PECVD device process cavity, is evacuated to chamber pressure by high vacuum system
10-6Torr, cavity are heated to 200 DEG C；It is passed through 20sccm silane (purity：99.999%), 10sccm diboranes (2%)-hydrogen
Gaseous mixture (purity 99.999%), regulation and control chamber pressure to 300mTorr；Radio-frequency power supply (13.56MHz) is opened, power 10W, is swashed
Send out process gas and produce plasma；After 60 seconds, radio-frequency power supply is closed, obtains 10nm boron-doping p+ type amorphous silicon membranes.Then, adopt
The grid silver electrode of thick TCO (transparent conductive oxide) films of 80nm and 1 μ m-thick is deposited in upper surface with hot evaporation method,
Lower surface deposits the argent of 1 μ m-thick, and detailed process is：Thermal evaporation plated film instrument specific bit is arranged on after sample is put into fixture
Put, place ITO (tin indium oxide) particle in corresponding crucible, chamber pressure is evacuated to 10 by high vacuum system-6Torr.Open
ITO crucible dc sources, slow tune power to evaporation rate 0.1nm/s, deposit thickness is monitored by film thickness gauge and reaches 80nm
Thickness, close power supply and complete deposition；Afterwards with same operating method, the grid silver electrode and back side silver layer for completing 1 micron deposit.
Another implementation that 3nm silicon nitride films are deposited in the embodiment is to utilize Plasma ALD methods, its institute
Temperature is needed than relatively low, detailed process is：The n-type monocrystalline silicon piece cleaned up with RCA standard technologies is placed into ald chamber body,
Chamber vacuum is taken out to 10-6More than Torr, while cavity is heated to 50 DEG C.With SiCl4And NH3For presoma, pass first into
SiCl4Steam 1 second, the nitrogen 30 seconds that flow is 100sccm is then passed to, is then passed through 60sccm ammonia 5 seconds, this
During ammonia through etc. in vitro discharge cavity produce etc. it is in vitro after enter process cavity and the SiCl that is adsorbed on substrate4Reaction, finally leads to
The nitrogen that inbound traffics are 100sccm 30 seconds, this is a circulation；By the processing of 12 circulations, can be obtained in silicon chip surface
3nm silicon nitride film is obtained, tunnel layer is passivated as hole.
Embodiment 2~6
Period in embodiment 1 during cvd nitride silicon thin film is controlled at 10,8,4,2 respectively, makes to be made
Silicon nitride film thickness control respectively in 2.5nm, 2nm, 1.5nm, 1nm, 0.5nm, refractive index is 2.0, remaining with implement
Example 1.
Comparative example 1
The period of the silicon nitride film deposited in embodiment 1 is controlled at 14, i.e., changed the thickness of silicon nitride film
For 3.5nm, remaining is the same as embodiment 1.
Comparative example 2
The passivation that tunnel layer is passivated using hydrogenated intrinsic non-crystalline silicon as hole contacts solar cell, and main preparation process is：
(1) done in the n-type monocrystalline silicon piece upper surface cleaned up using PECVD methods deposition 5nm hydrogenated intrinsic non-crystalline silicons
Tunnel layer is passivated for hole, detailed process is：N-type monocrystalline silicon piece is cleaned with RCA standard technologies, table is purged or dried by nitrogen
Face moisture content, and be put into PECVD device process cavity, chamber pressure is evacuated to 10 by high vacuum system-6Torr, cavity heating
To 200 DEG C；It is passed through 20sccm silane (purity：99.999%), 20sccm hydrogen (purity 99.999%), regulation and control chamber pressure is extremely
300mTorr；Radio-frequency power supply (13.56MHz) is opened, power 15W, excites process gas to produce plasma with depositing hydrogenated non-
Polycrystal silicon film；After 30 seconds, radio-frequency power supply is closed, obtains 5nm hydrogenation non crystal silicon films；
(2) then, the boron-doping p+ non-crystalline silicons using PECVD methods deposition 10nm thickness are continued in upper surface, are selected as hole
Selecting property contact layer, detailed process are：Chamber pressure is evacuated to 10 by high vacuum system-6Torr, cavity are heated to 200 DEG C.It is logical
Enter 20sccm silane (purity：99.999%), 10sccm diboranes (2%)-hydrogen mixed gas (purity 99.999%), chamber is regulated and controled
Body pressure is to 300mTorr；Radio-frequency power supply (13.56MHz) is opened, power 10W, excites process gas to produce plasma；60 seconds
Afterwards, radio-frequency power supply is closed, obtains 10nm boron-doping p+ type amorphous silicon membranes；
(3) then, the thick TCO thin films of 80nm and the grid silver electrode of 1 μ m-thick are deposited in upper surface using hot evaporation method,
The argent of 1 μ m-thick is deposited in lower surface, detailed process is：Specified after sample is put into fixture installed in thermal evaporation plated film instrument
Position, ITO particles are placed in corresponding crucible, chamber pressure is evacuated to 10 by high vacuum system-6Torr；Open ITO crucibles
Dc source, slow tune power to evaporation rate 0.1nm/s, deposit thickness is monitored by film thickness gauge and reaches 80nm thickness, is closed
Power supply completes deposition；Afterwards with same operating method, the grid silver electrode and back side silver layer for completing 1 micron deposit.
Comparative example 3
The passivation that tunnel layer is passivated using silica as hole contacts solar cell, and main preparation process is：
(1) the n-type monocrystalline silicon piece cleaned up soaks 10 minutes first in the salpeter solution of concentration 68%, makes surface shape
Into about 1.5nm ultra-thin silica, tunnel layer is passivated as hole；
(2) then, the boron-doping p using PECVD methods deposition 10nm thickness is continued in upper surface+Non-crystalline silicon, selected as hole
Selecting property contact layer；Detailed process is：Sample is put into PECVD device process cavity, by high vacuum system by chamber pressure
It is evacuated to 10-6Torr, cavity are heated to 200 DEG C.It is passed through 20sccm silane (purity：99.999%), 10sccm diboranes (2%)-
Hydrogen mixed gas (purity 99.999%), regulation and control chamber pressure to 300mTorr；Open radio-frequency power supply (13.56MHz), power
10W, process gas is excited to produce plasma；After 60 seconds, radio-frequency power supply is closed, obtains 10nm boron-doping p+ type amorphous silicon membranes.
(3) then, the thick TCO thin films of 80nm and the grid silver electrode of 1 μ m-thick are deposited in upper surface using hot evaporation method,
The argent of 1 μ m-thick is deposited in lower surface, detailed process is：Specified after sample is put into fixture installed in thermal evaporation plated film instrument
Position, ITO particles are placed in corresponding crucible, chamber pressure is evacuated to 10 by high vacuum system-6Torr.Open ITO crucibles
Dc source, slow tune power to evaporation rate 0.1nm/s, deposit thickness is monitored by film thickness gauge and reaches 80nm thickness, is closed
Close power supply and complete deposition；Afterwards with same operating method, the grid silver electrode and back side silver layer for completing 1 micron deposit.
Embodiment 1-6 and comparative example 1 prepare the silicon chip performance test of gained as shown in figure 1, I-V curve is current tunnelling energy
One embodiment of power, by theoretical calculation, when current value is higher than 0.01A/cm2, it is higher just to can guarantee that the battery made can obtain
Fill factor, curve factor, Fig. 1 is using I-V curves of the SiNx as the silicon chip of tunnel layer, is illustrated in figure, when SiNx is less than 3nm, is had
There is better tunnelling effect, be advantageous to obtain higher fill factor, curve factor applied to battery.
The solar cell performance test that embodiment 1-6 and comparative example 1-3 prepares gained is as shown in table 1
Table 1
From table from the point of view of result, tunnel layer is passivated as hole using ultra-thin silicon nitride, solar cell conversion efficiency can be with
Lift 0.4-1.0%, short circuit current, open-circuit voltage and fill factor, curve factor have lifting, this have benefited from silicon nitride have to silicon chip it is good
While good surface passivation, there is higher tunneling efficiency to hole.
The present embodiments relate to material, reagent and experimental facilities, be to meet solar cell unless otherwise instructed
The commercially available prod of preparation field.
It is described above, only the preferred embodiments of the present invention, it is noted that for those skilled in the art
For, on the premise of the core technology of the present invention is not departed from, improvements and modifications can also be made, these improvements and modifications also should
Belong to the scope of patent protection of the present invention.Any change in the implication and scope suitable with claims of the present invention, all
It is considered as being included within the scope of the claims.
Claims (11)
1. a kind of hole is passivated tunnelling film, main constituents are silicon nitride, film thickness 0.5-3nm.
2. hole according to claim 1 is passivated tunnelling film, it is characterised in that the folding of the hole passivation tunnelling film
It is 1.8-2.5 to penetrate rate.
3. described in any one of claim 1 or 2 hole passivation tunnelling film preparation method, it is characterised in that using etc. from
Daughter aids in or hot assisted atomic layer deposition method cvd nitride silicon thin film.
4. the preparation method of passivation tunnelling film in hole according to claim 3, it is characterised in that comprise the following steps：
S1. siliceous precursor molecule is passed through, siliceous intermediate product is generated in silicon chip surface；
S2. inert gas is passed through to be cleaned；
S3. nitrogenous precursor molecule is passed through, nitridation generation silicon nitride film is carried out to siliceous intermediate product.
5. the preparation method of passivation tunnelling film in hole according to claim 4, it is characterised in that the step S1-S3
Sequentially repeat to obtain the silicon nitride film thickness to suit the requirements.
6. the preparation method of passivation tunnelling film in hole according to claim 4, it is characterised in that reaction temperature 50-
500℃。
7. the preparation method of passivation tunnelling film in hole according to claim 4, it is characterised in that contain in the step S1
Silicon precursor molecule is chlorosilane gas, and the chlorosilane gas is SiCl4、SiH2Cl2、Si2Cl6In one kind or more
Kind.
8. the preparation method of passivation tunnelling film in hole according to claim 4, it is characterised in that contain in the step S3
Nitrogen precursor molecule is NH3、N2H4One or both of.
9. the preparation method of passivation tunnelling film in hole according to claim 4, it is characterised in that given birth to the step S3
Into silicon nitride film hydrogen plasma process.
10. the preparation method of passivation tunnelling film in hole according to claim 8, it is characterised in that produce hydrogen plasma
The method of body is high frequency or microwave plasma enhanced chemical gas-phase method.
11. application of the hole passivation tunnelling film in crystal silicon solar battery described in any one of claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710694413.8A CN107644805A (en) | 2017-08-15 | 2017-08-15 | Hole passivation tunnelling film, preparation method and its application in solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710694413.8A CN107644805A (en) | 2017-08-15 | 2017-08-15 | Hole passivation tunnelling film, preparation method and its application in solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107644805A true CN107644805A (en) | 2018-01-30 |
Family
ID=61110761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710694413.8A Pending CN107644805A (en) | 2017-08-15 | 2017-08-15 | Hole passivation tunnelling film, preparation method and its application in solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107644805A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326717A (en) * | 2018-09-07 | 2019-02-12 | 常州大学 | A kind of the passivation tunnelling hybrid inorganic-organic perovskite solar battery and laminated cell of large area efficient stable |
| CN112908846A (en) * | 2019-12-02 | 2021-06-04 | 财团法人金属工业研究发展中心 | Method for forming semiconductor structure and semiconductor structure |
| CN114622183A (en) * | 2020-12-11 | 2022-06-14 | 湖南红太阳光电科技有限公司 | Method for preparing silicon oxide film |
| CN116344632A (en) * | 2023-02-17 | 2023-06-27 | 扬州大学 | POLO-IBC passivation contact battery and preparation method thereof |
| CN118139490A (en) * | 2024-05-08 | 2024-06-04 | 上海陛通半导体能源科技股份有限公司 | OLED structure prepared based on molecular layer deposition technology and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101330014A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing atomic layer and semiconductor device formed by the same |
| CN101764176A (en) * | 2008-11-03 | 2010-06-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing silicon solar cells |
| CN102144303A (en) * | 2008-09-03 | 2011-08-03 | 弗兰霍菲尔运输应用研究公司 | Hetero solar cell and method for producing hetero solar cells |
| CN106449781A (en) * | 2016-10-26 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | Passivation contact solar cell |
-
2017
- 2017-08-15 CN CN201710694413.8A patent/CN107644805A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101330014A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing atomic layer and semiconductor device formed by the same |
| CN102144303A (en) * | 2008-09-03 | 2011-08-03 | 弗兰霍菲尔运输应用研究公司 | Hetero solar cell and method for producing hetero solar cells |
| CN101764176A (en) * | 2008-11-03 | 2010-06-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing silicon solar cells |
| CN106449781A (en) * | 2016-10-26 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | Passivation contact solar cell |
Non-Patent Citations (2)
| Title |
|---|
| 冯丽萍，刘正堂: "《薄膜技术与应用》", 29 February 2016 * |
| 邹小平: "《纳米材料与敏化太阳电池》", 31 December 2014 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326717A (en) * | 2018-09-07 | 2019-02-12 | 常州大学 | A kind of the passivation tunnelling hybrid inorganic-organic perovskite solar battery and laminated cell of large area efficient stable |
| CN112908846A (en) * | 2019-12-02 | 2021-06-04 | 财团法人金属工业研究发展中心 | Method for forming semiconductor structure and semiconductor structure |
| CN112908846B (en) * | 2019-12-02 | 2024-06-11 | 财团法人金属工业研究发展中心 | Method for forming semiconductor structure and semiconductor structure |
| CN114622183A (en) * | 2020-12-11 | 2022-06-14 | 湖南红太阳光电科技有限公司 | Method for preparing silicon oxide film |
| CN116344632A (en) * | 2023-02-17 | 2023-06-27 | 扬州大学 | POLO-IBC passivation contact battery and preparation method thereof |
| CN118139490A (en) * | 2024-05-08 | 2024-06-04 | 上海陛通半导体能源科技股份有限公司 | OLED structure prepared based on molecular layer deposition technology and method |
| CN118139490B (en) * | 2024-05-08 | 2024-07-02 | 上海陛通半导体能源科技股份有限公司 | OLED structure prepared based on molecular layer deposition technology and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107644805A (en) | Hole passivation tunnelling film, preparation method and its application in solar cell | |
| JP6685896B2 (en) | Solar cell and manufacturing method thereof | |
| JP3907726B2 (en) | Method for manufacturing microcrystalline silicon film, method for manufacturing semiconductor device, and method for manufacturing photoelectric conversion device | |
| CN105322043B (en) | It is a kind of can two-sided entering light crystal silicon solar battery and preparation method thereof | |
| CN103682153B (en) | Metal-insulating layer-semiconductor back-contact interface structure for perovskite-type organic lead halide thin-film solar cells and preparation method of metal-insulating layer-semiconductor back-contact interface structure | |
| CN106024927A (en) | Silicon-based solar cell and preparation method therefor | |
| TW200947729A (en) | Semiconductor structure combination for thin-film solar cell and manufacture thereof | |
| US6815788B2 (en) | Crystalline silicon thin film semiconductor device, crystalline silicon thin film photovoltaic device, and process for producing crystalline silicon thin film semiconductor device | |
| CN110112226A (en) | Novel full passivation contact crystalline silicon solar cell comprising of one kind and preparation method thereof | |
| CN103050553A (en) | Crystalline silicon solar cell with double-side passivation and preparing method thereof | |
| CN101609796B (en) | Film forming method and method for manufacturing film solar battery | |
| CN116344653A (en) | Solar cell and method for manufacturing same | |
| TW202314040A (en) | Method for manufacturing heterojunction solar cell and heterojunction solar cell | |
| Jeong et al. | Preparation of born-doped a-SiC: H thin films by ICP-CVD method and to the application of large-area heterojunction solar cells | |
| CN106887483A (en) | Silicon substrate heterojunction solar cell and preparation method thereof | |
| CN112030143A (en) | Preparation method of high-efficiency amorphous silicon passivation film for a-Si/c-Si heterojunction solar cell | |
| WO2022134994A1 (en) | Solar cell, production method, and photovoltaic module | |
| CN109037392A (en) | A kind of production technology of graphene/silicon structure solar battery | |
| CN116314439A (en) | NiO in solar cell x Hole transport layer and preparation method and application thereof | |
| CN104576801B (en) | Compound unijunction PIN solar cells of crystal silicon and silicon thin film with transition zone and preparation method thereof | |
| CN1407603A (en) | Crystal silicon film semiconductor device and its manufacture, and photoelectric device | |
| CN113871493A (en) | Aluminum-doped titanium oxide film based on atomic layer deposition technology and preparation method thereof | |
| CN108695403B (en) | A kind of adjustable graphene heterojunction structure of fermi level and preparation method thereof | |
| Shi et al. | Process research on intrinsic passivation layer for heterojunction solar cells | |
| CN105591031A (en) | Dual-channel parallel type organic-inorganic composite solar cell based on primary crystalline porous nanometer germanium film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180130 |
|
| RJ01 | Rejection of invention patent application after publication |