CN104993018A - Method for controlling content of sodium in CIGS film, solar cell, and structure - Google Patents
Method for controlling content of sodium in CIGS film, solar cell, and structure Download PDFInfo
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- CN104993018A CN104993018A CN201510366844.2A CN201510366844A CN104993018A CN 104993018 A CN104993018 A CN 104993018A CN 201510366844 A CN201510366844 A CN 201510366844A CN 104993018 A CN104993018 A CN 104993018A
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 title claims abstract description 87
- 239000011734 sodium Substances 0.000 title claims abstract description 87
- 229910052708 sodium Inorganic materials 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims description 100
- 229910001415 sodium ion Inorganic materials 0.000 claims description 93
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 86
- 230000004888 barrier function Effects 0.000 claims description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 29
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 21
- 229910052750 molybdenum Inorganic materials 0.000 claims description 21
- 239000011733 molybdenum Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 18
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 18
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 18
- 210000001142 back Anatomy 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 12
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 12
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000011775 sodium fluoride Substances 0.000 claims description 9
- 235000013024 sodium fluoride Nutrition 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- -1 oxidation sial Chemical compound 0.000 claims description 6
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 6
- 239000011780 sodium chloride Substances 0.000 claims description 6
- 235000009518 sodium iodide Nutrition 0.000 claims description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 6
- 235000011152 sodium sulphate Nutrition 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 6
- 235000017550 sodium carbonate Nutrition 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 230000000903 blocking effect Effects 0.000 abstract description 7
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 90
- 239000010408 film Substances 0.000 description 23
- 238000004544 sputter deposition Methods 0.000 description 19
- 238000004062 sedimentation Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- FYAABNCYNWGSQX-UHFFFAOYSA-L disodium;difluoride Chemical compound [F-].[F-].[Na+].[Na+] FYAABNCYNWGSQX-UHFFFAOYSA-L 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a method for controlling the content of sodium in a CIGS film, and the method comprises the steps: firstly forming a sodion blocking layer on a substrate containing sodium, and blocking the sodion in the substrate from being diffused into the CIGS film; secondly forming a controllable sodium source layer on the sodion blocking layer, and providing sodion with a controllable content from the CIGS film through the control of the thickness of the controllable sodium source layer. The above method enables uncontrollable sodion in the substrate to be isolated, blocks the uncontrollable sodion from being diffused into the CIGS film, provides the controllable sodium source layer, and precisely controls the content of sodion in the CIGS film through the diffusion of the sodion in the controllable sodium source layer, thereby prompting the growth of CIGS crystalline grain, and obtaining a high-efficiency CIGS film solar cell.
Description
Technical field
The present invention relates to Copper Indium Gallium Selenide (CIGS) technical field of thin-film solar, a kind ofly specifically control the method for sodium content in CIGS thin film, a kind of structure for CIGS thin film solar cell and a kind of CIGS thin film solar cell.
Background technology
CIGS thin film solar cell, be the chalcopyrite crystalline membrane solar cell being made up of optimal proportion Cu (copper), In (indium), Ga (gallium), Se (selenium) four kinds of elements, have that light absorpting ability is strong, power generation stability good, transformation efficiency is high, production cost is low and the many advantages such as the energy recovery cycle is short.CIGS thin film is as light absorption layer material, and its performance directly has influence on the performance of CIGS solar cell device, particularly in the CIGS thin film of soda-lime glass Grown.
Research shows: in the manufacture of CIGS solar cell and in using, a large amount of sodium ions in soda-lime glass substrate can enter CIGS thin film inside along the grain boundary decision of molybdenum back electrode, the diffusion of sodium ion is mainly present in two processes: first, in the growth course of CIGS thin film, because this process need experience high temperature, under thermal excitation state, sodium ion is very easy to diffuse into CIGS thin film from soda-lime glass substrate, and this process is spontaneous uncontrollable, the too high oxygen level of interface also can have certain facilitation to the diffusion of sodium ion simultaneously; The second, in the use procedure of CIGS solar cell device, due to electric current by and the temperature that causes due to long-time illumination of the external world raise, make sodium ion again diffuse into CIGS thin film inside owing to being electrically excited with thermal excitation.The sodium ion of trace have help CIGS crystal grain growth, obtain efficient battery device, but excessive sodium ion can form defect state at material internal, affects battery efficiency and stability greatly.
Summary of the invention
In view of the above problems, the application provides a kind of and controls the method for sodium content in CIGS thin film, a kind of structure for CIGS thin film solar cell and a kind of CIGS thin film solar cell.
The technical scheme that the application adopts is:
The application provides a kind of method controlling sodium content in CIGS thin film, comprising:
Forming sodium ion barrier layer containing on the substrate of sodium element, stop that the sodium ion in described substrate is diffused in described CIGS thin film;
Described sodium ion barrier layer forms controlled sodium active layer, the sodium ion providing content controlled for described CIGS thin film by the thickness controlling described controlled sodium active layer.
Optionally, described sodium ion barrier layer comprises the following material of at least one: silicon nitride, silica, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen zirconia, zirconia, zirconium nitride, aluminium nitride, aluminium oxide, oxidation sial, aluminium silicon nitride, silicon oxynitride aluminium, the oxide of zinc tin oxide or at least two kinds of elements being made up of at least one element in silicon, zirconium and titanium and molybdenum, nitride or nitrogen oxide.
Optionally, described sodium ion barrier layer is silicon nitride, and the thickness of described silicon nitride is more than or equal to 120nm, refractive index is 2.0 ~ 2.1.
Preferably, the thickness of described silicon nitride is 120nm ~ 150nm.
Optionally, the method on described formation sodium ion barrier layer is direct current sputtering deposition, radio frequency sputtering deposition, magnetron sputtering deposition or ion beam sputter depositing.
Optionally, in described control CIGS thin film, the method for sodium content also comprises:
Before the controlled sodium active layer of formation, described sodium ion barrier layer forms electrode layer.
Optionally, the step on described formation sodium ion barrier layer, the step of described formation electrode layer and between process carry out all under vacuum conditions.
Optionally, the method for described formation electrode layer is hydatogenesis, direct current sputtering deposition, radio frequency sputtering deposition, magnetron sputtering deposition or ion beam sputter depositing.
Optionally, described electrode layer adopts molybdenum, nickel or tungsten material, and the thickness of described electrode layer is more than or equal to 250nm, resistivity is less than 14 μ Ω cm.
Preferably, the thickness of described electrode layer is 300nm ~ 350nm.
Optionally, described controlled sodium active layer comprises the following material of at least one: sodium fluoride, sodium chloride, sodium bromide, sodium iodide, sodium carbonate, sodium sulphate, sodium acid carbonate, niter cake.
Optionally, the method for the controlled sodium active layer of described formation is hydatogenesis, direct current sputtering deposition, radio frequency sputtering deposition, magnetron sputtering deposition or ion beam sputter depositing.
Corresponding, the application also provides a kind of structure for CIGS thin film solar cell, comprises containing the substrate of sodium element, dorsum electrode layer and CIGS absorbed layer;
Sodium ion barrier layer is provided with, for stopping that the sodium ion in described substrate is diffused in described CIGS absorbed layer between described substrate and described dorsum electrode layer;
Controlled sodium active layer is provided with, for the sodium ion providing content controlled for described CIGS absorbed layer between described dorsum electrode layer and described CIGS absorbed layer.
Optionally, described sodium ion barrier layer comprises the following material of at least one: silicon nitride, silica, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen zirconia, zirconia, zirconium nitride, aluminium nitride, aluminium oxide, oxidation sial, aluminium silicon nitride, silicon oxynitride aluminium, the oxide of zinc tin oxide or at least two kinds of elements being made up of at least one element in silicon, zirconium and titanium and molybdenum, nitride or nitrogen oxide.
Optionally, described sodium ion barrier layer is made up of silicon nitride, and the thickness of described silicon nitride is more than or equal to 120nm, refractive index is 2.0 ~ 2.1.
Preferably, the thickness of described silicon nitride is 120nm ~ 150nm.
Optionally, described electrode layer adopts molybdenum, nickel or tungsten material, and the thickness of described electrode layer is more than or equal to 250nm, resistivity is less than 14 μ Ω cm.
Preferably, the thickness of described electrode layer is 300nm ~ 350nm.
Optionally, described controlled sodium active layer comprises the following material of at least one: sodium fluoride, sodium chloride, sodium bromide, sodium iodide, sodium carbonate, sodium sulphate, sodium acid carbonate, niter cake.
The application also provides a kind of CIGS thin film solar cell, comprises the structure for the formation of CIGS thin film solar cell that the application provides.
Compared with prior art, the application has the following advantages:
A kind of method controlling sodium content in CIGS thin film that the application provides, first forming sodium ion barrier layer containing on the substrate of sodium element, stops that the sodium ion in described substrate is diffused in described CIGS thin film; Then on described sodium ion barrier layer, controlled sodium active layer is formed, the sodium ion providing content controlled for described CIGS thin film by the thickness controlling described controlled sodium active layer.Pass through this method, on the one hand the uncontrollable sodium ion in substrate is isolated, stop that it diffuses in CIGS thin film, one controlled sodium active layer is provided simultaneously, the content of sodium ion in described CIGS thin film is accurately controlled by the diffusion of sodium ion in controlled sodium active layer, thus promote the growth of CIGS crystal grain, and then obtain efficient CIGS thin film solar cell.
Accompanying drawing explanation
Fig. 1 is a kind of flow chart controlling the embodiment of the method for sodium content in CIGS thin film that the application provides;
Fig. 2 is the schematic diagram of a kind of constructive embodiment for the formation of CIGS thin film solar cell that the application provides;
Embodiment
Set forth a lot of detail in the following description so that fully understand the application.But the application can be much different from alternate manner described here to implement, those skilled in the art can when doing similar popularization without prejudice to when the application's intension, and therefore the application is by the restriction of following public concrete enforcement.
This application provides and a kind ofly control the method for sodium content in CIGS thin film, a kind of structure for CIGS thin film solar cell and a kind of CIGS thin film solar cell, by reference to the accompanying drawings the embodiment of the application is described in detail successively below.
Please refer to Fig. 1, its a kind of flow chart controlling the embodiment of the method for sodium content in CIGS thin film provided for the application, in described control CIGS thin film, the method for sodium content comprises the following steps:
Step S101, forming sodium ion barrier layer containing on the substrate of sodium element, stops that the sodium ion in described substrate is diffused in described CIGS thin film.
In the manufacture of CIGS thin film solar cell and in using, CIGS thin film inside can be entered along the grain boundary decision of back electrode containing a large amount of sodium ions in the substrate of sodium element, trace sodium ion have help CIGS crystal grain growth, obtain efficient battery device, but excessive sodium ion can form defect state at material internal, affect battery efficiency and stability greatly.Because the sodium ions content in substrate is higher and the diffusion of sodium ion is uncontrolled, so cause the sodium ions content in CIGS thin film too high and uncontrollable, thus affect battery efficiency and the stability of CIGS thin film solar cell.
Trace, the doping of controlled sodium ion is obtained in order to make described CIGS thin film, first the impact of sodium ion in substrate will be got rid of, therefore, this step is forming sodium ion barrier layer containing on the substrate of sodium element, described sodium ion barrier layer, for stopping that the sodium ion in described substrate is diffused in described CIGS thin film, avoids that excessive sodium ion is uncontrolled to be diffused in described CIGS thin film.
Wherein, the material on described sodium ion barrier layer can select silicon nitride, silica, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen zirconia, zirconia, zirconium nitride, aluminium nitride, aluminium oxide, oxidation sial, aluminium silicon nitride, silicon oxynitride aluminium, any one or its mixture in zinc tin oxide, in addition, can also adopt the oxide of at least two kinds of elements be made up of at least one element in silicon, zirconium and titanium and molybdenum, nitride or nitrogen oxide.
Because silicon nitride film has excellent compact texture, and there is good ion barrier performance, therefore, in the embodiment that the application provides, described sodium ion barrier layer adopts silicon nitride material, its thickness requirement is more than or equal to 120nm, and being thinner than this thickness can affect blocking effect to sodium ion to a certain extent.For consideration that is cost-saving and raising deposition efficiency, in a preferred embodiment of the application, the thickness of described silicon nitride film is no more than 150nm, and exceeding this thickness does not functionally have other negative effects, and it is also within the protection range of the application.
Consider that refractive index is the important indicator of reflection thin film composition and compactness, and the sodium ion barrier effect impact of the compactness of thin film composition and film on silicon nitride film is larger, grope through experiment, in provide embodiment of the application, the refractive index of described silicon nitride film is 2.0 ~ 2.1.
The method forming described sodium ion barrier layer has chemical vapour deposition (CVD) (CVD) method and the large class of physical vapour deposition (PVD) (PVD) method two.
Chemical vapour deposition technique is the pioneer's reactant utilizing gaseous state, is generated the technology of solid film by the approach of atom, intermolecular chemical reaction.It is (as NH the gas containing film element (Si, N) that chemical vapour deposition technique prepares silicon nitride film
3, SiH
4, SiCl
4, SiH
2cl
2deng) be fed to the surface of substrate in cvd furnace, utilize heating, plasma, ultraviolet light and even laser equal energy source, make its deposit film that reacts to each other.High temperature chemical vapor deposition, middle temperature chemical vapour deposition (CVD), low temperature chemical vapor deposition etc. can be divided by in-furnace temperature height; Aumospheric pressure cvd, low-pressure chemical vapor deposition etc. is divided into by pressure in stove; Thermal chemical vapor deposition, plasma enhanced chemical vapor deposition, photo chemical vapor deposition etc. can be divided into by the reaction energy.Above-mentioned chemical vapour deposition technique is all the common method preparing silicon nitride film in prior art, repeats no more herein, and it is all within the protection range of the application.
Physical vaporous deposition adopts the method for heating or high energy beam bombardment that material to be plated or target are flashed to gaseous state in a vacuum chamber and makes it to be deposited on the technology that surface of the work forms coating, mainly be divided into hydatogenesis and sputtering sedimentation, sputtering sedimentation can be further subdivided into magnetron sputtering deposition and ion beam sputter depositing etc.The conventional method preparing silicon nitride film mainly sputtering sedimentation, such as, make target with silicon, nitrogen discharge, with radio frequency (RF) sputtering sedimentation silicon nitride film; And for example target made by direct silicon nitride, and argon ~ nitrogen carries out sputtering growth as background atmosphere.Above-mentioned physical vaporous deposition is all the common method preparing silicon nitride film in prior art, repeats no more herein, and it is all within the protection range of the application.
Step S102, described sodium ion barrier layer forms controlled sodium active layer, the sodium ion providing content controlled for described CIGS thin film by the thickness controlling described controlled sodium active layer.
Trace, the doping of controlled sodium ion is obtained in order to make described CIGS thin film, by step S101, forming sodium ion barrier layer containing on the substrate of sodium element, isolated by sodium ion in described substrate, excessive being diffused in CIGS thin film of sodium ion avoided in described substrate causes uncontrollable impact.Next, the controlled sodium active layer for described CIGS thin film provides sodium ions content controlled is needed.
It should be noted that, in the making of CIGS thin film solar cell, need to make dorsum electrode layer between substrate and CIGS thin film, in the control CIGS thin film that the application provides sodium content method in, described sodium ion barrier layer is insulation, therefore to deposit on substrate before making electrode layer, can spread due to sodium ion and pass through electrode layer, therefore, described controlled sodium active layer can deposit on described sodium ion barrier layer before making electrode layer, also can deposit on described electrode layer again after making electrode layer, two kinds of methods can realize the object of the control sodium ion diffusion of the application, all within the protection range of the application.Wherein the controlled sodium active layer of the latter directly contacts with CIGS thin film, more be conducive to controlling sodium ion to the diffusion in described CIGS thin film, therefore, in the preferred embodiment that the application provides, first on described sodium ion barrier layer, form electrode layer, then on described electrode layer, form controlled sodium active layer, finally in described controlled sodium active layer, form CIGS thin film.
Wherein, described electrode layer can adopt the materials such as molybdenum, nickel or tungsten, wherein due to molybdenum electric current collection and in transporting performance better, and cost is lower, therefore, in a specific embodiment of the application, described electrode layer adopts Mo, generally selects purity at the molybdenum target material of more than 3N5.The thickness General Requirements of described electrode layer is more than or equal to 250nm, and when being thinner than this thickness, the poor-performing such as electric current conduction, affects performance and the stability of CIGS thin film solar cell.For consideration that is cost-saving and raising deposition efficiency, in a preferred embodiment of the application, the thickness of described electrode layer is no more than 1000nm, and exceeding this thickness does not functionally have other negative effects, and it is also within the protection range of the application.Through experimental exploring, in order to obtain better current expansion effect, in the embodiment that the application provides, the thickness of described electrode layer is 300nm ~ 350nm.
The key index of the quality and performance of evaluating described electrode layer is resistivity, the too high meeting of resistivity has a negative impact to the performance of CIGS thin film solar cell and stability, grope through experiment, in the embodiment that the application provides, described resistivity is less than 14 μ Ω cm.
Form the method mainly physical vaporous deposition of described electrode layer, physical vaporous deposition adopts the method for heating or high energy beam bombardment that material to be plated or target are flashed to gaseous state in a vacuum chamber and makes it to be deposited on the technology that surface of the work forms coating, mainly be divided into hydatogenesis and sputtering sedimentation, sputtering sedimentation can be further subdivided into magnetron sputtering deposition and ion beam sputter depositing etc.Above-mentioned physical vaporous deposition is all the common method preparing silicon nitride film in prior art, repeats no more herein, and it is all within the protection range of the application.
Consider that oxygen element can play facilitation to the diffusion of sodium ion, in deposition process, produce oxygen element at the interface on described sodium ion barrier layer thus reduce its barrier effect to sodium ion, in an embodiment of the application, described electrode layer and described sodium ion barrier layer are successive sedimentations, namely after described sodium ion barrier deposition completes, not vacuum breaker, continue the described electrode layer of deposition, ensure that described sodium ion barrier layer ~ electrode layer interface is anaerobic state, thus avoid because oxygen exists the problem promoting sodium diffusion, improve the blocking effect that described sodium ion barrier layer is spread for sodium.
Described controlled sodium active layer can adopt sodium fluoride, sodium chloride, sodium bromide, sodium iodide; sodium carbonate, sodium sulphate, sodium acid carbonate, any one or its mixture in niter cake; in theory, any one sodium salt all can be used as controlled sodium active layer, and it is all within the protection range of the application.In a preferred embodiment of the application, described controlled sodium active layer adopts sodium fluoride.
Described controlled sodium active layer can adopt chemical vapour deposition technique or physical vaporous deposition according to the character of material.Physical gas-phase deposite method is mainly divided into hydatogenesis and sputtering sedimentation, and sputtering sedimentation can be further subdivided into direct current sputtering deposition, radio frequency (RF) sputtering sedimentation, magnetron sputtering deposition and ion beam sputter depositing etc.In an embodiment of the application, described controlled sodium active layer is sodium fluoride, and its deposition process is hydatogenesis.
Like this, the content of sodium ion accurately can be controlled by the thickness controlling described controlled sodium active layer, thus the sodium ions content in CIGS thin film is accurately controlled, the facilitation of sodium to CIGS crystal grain and crystal orientation growth is played greatly, and not introducing impurity defect affects device performance simultaneously.
So far, the flow process of sodium content in the control CIGS thin film that the application provides is completed by step S101 to S102.
In the preferred embodiment that the application provides, first utilize online PVD equipment, adopt intermediate frequency power supply sputtering sedimentation sodium ion barrier layer silicon nitride film on soda-lime glass substrate, silicon nitride film has compact texture, and has good ion barrier performance; The silicon nitride film chemical constituent of employing sputtering sedimentation is controlled, cost is low, be easy to Large-Area-Uniform preparation.Silicon nitride film is amorphous state, and thickness is 120 ~ 150nm, and refractive index, between 2.0 ~ 2.1, has the stoichiometric proportion that is similar to Si3N4 and Silicon-rich slightly.
Next, when not vacuum breaker, adopt DC power supply successive sedimentation molybdenum back electrode on described sodium ion barrier layer, molybdenum target material adopts the purity of more than 3N5.The thickness of molybdenum back electrode is 300 ~ 350nm, and resistivity is less than 14 μ Ω cm.Silicon nitride under successive sedimentation ~ molybdenum interface is anaerobic state, avoids because oxygen exists the problem promoting sodium diffusion, improves the blocking effect that silicon nitride spreads for sodium significantly.
Deposition one deck sodium fluoride sodium active layer is buried before last vaporising under vacuum deposition CIGS thin film, thickness and the sodium ions content of rete have linear relationship, the content of sodium accurately can be controlled by the thickness controlling described sodium active layer, thus the content of sodium in CIGS thin film is accurately controlled, the facilitation of sodium to CIGS crystal grain and crystal orientation growth is played greatly, and not introducing impurity defect affects device performance simultaneously.
In the above-described embodiment, provide a kind of method controlling sodium content in CIGS thin film, correspond, the application also provides a kind of structure for the formation of CIGS thin film solar cell.Please refer to Fig. 2, the schematic diagram of its a kind of constructive embodiment for the formation of CIGS thin film solar cell provided for the application, the described structure for the formation of CIGS thin film solar cell is that the method for sodium content in the control CIGS thin film adopting the application to provide makes, what describe is fairly simple, obtain fairly simple, relevant part illustrates see the part of embodiment of the method.
The described structure for the formation of CIGS thin film solar cell comprises containing the substrate 101 of sodium element, dorsum electrode layer 103 and CIGS absorbed layer 105, sodium ion barrier layer 102 is provided with, for stopping that the sodium ion in described substrate 101 is diffused in described CIGS absorbed layer 105 between described substrate 101 and described dorsum electrode layer 103; Controlled sodium active layer 104 is provided with, for the sodium ion providing content controlled for described CIGS absorbed layer 105 between described dorsum electrode layer 103 and described CIGS absorbed layer 105.
Wherein, the material on described sodium ion barrier layer 102 can select silicon nitride, silica, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen zirconia, zirconia, zirconium nitride, aluminium nitride, aluminium oxide, oxidation sial, aluminium silicon nitride, silicon oxynitride aluminium, any one or its mixture in zinc tin oxide, in addition, can also adopt the oxide of at least two kinds of elements be made up of at least one element in silicon, zirconium and titanium and molybdenum, nitride or nitrogen oxide.
Because silicon nitride film has excellent compact texture, and there is good ion barrier performance, therefore, in the embodiment that the application provides, described sodium ion barrier layer 102 adopts silicon nitride material, its thickness requirement is more than or equal to 120nm, and being thinner than this thickness can affect blocking effect to sodium ion to a certain extent.For consideration that is cost-saving and raising deposition efficiency, in a preferred embodiment of the application, the thickness of described silicon nitride film is no more than 150nm, and exceeding this thickness does not functionally have other negative effects, and it is also within the protection range of the application.
Consider that refractive index is the important indicator of reflection thin film composition and compactness, and the sodium ion barrier effect impact of the compactness of thin film composition and film on silicon nitride film is larger, grope through experiment, in provide embodiment of the application, the refractive index of described silicon nitride film is 2.0 ~ 2.1.
Described dorsum electrode layer 103 can adopt the materials such as molybdenum, nickel or tungsten, wherein due to molybdenum electric current collection and in transporting performance better, and cost is lower, therefore, in a specific embodiment of the application, described dorsum electrode layer 103 adopts Mo, generally selects purity at the molybdenum target material of more than 3N5.The thickness General Requirements of described dorsum electrode layer 103 is more than or equal to 250nm, and when being thinner than this thickness, the poor-performing such as current expansion, affects performance and the stability of CIGS thin film solar cell.For consideration that is cost-saving and raising deposition efficiency, in a preferred embodiment of the application, the thickness of described dorsum electrode layer 103 is no more than 1000nm, and exceeding this thickness does not functionally have other negative effects, and it is also within the protection range of the application.Through experimental exploring, in order to obtain better current expansion effect, in the embodiment that the application provides, the thickness of described dorsum electrode layer 103 is 300nm ~ 350nm.
Evaluate the described quality of dorsum electrode layer 103 and the key index of performance is resistivity, the too high meeting of resistivity has a negative impact to the performance of CIGS thin film solar cell and stability, grope through experiment, in the embodiment that the application provides, the resistivity of described dorsum electrode layer 103 is less than 14 μ Ω cm.
Described controlled sodium active layer can adopt sodium fluoride, sodium chloride, sodium bromide, sodium iodide; sodium carbonate, sodium sulphate, sodium acid carbonate, any one or its mixture in niter cake; in theory, any one sodium salt all can be used as controlled sodium active layer, and it is all within the protection range of the application.In a preferred embodiment of the application, described controlled sodium active layer adopts sodium fluoride.
Above, be a kind of constructive embodiment for the formation of CIGS thin film solar cell that the application provides.
The application also provides a kind of CIGS thin film solar cell, it is characterized in that, comprises the above-mentioned structure for the formation of CIGS thin film solar cell that the application provides.
Because described CIGS thin film solar cell have employed the above-mentioned structure for the formation of CIGS thin film solar cell that the application provides, relevant part please refer to the embodiment of the structure of described formation CIGS thin film solar cell, repeats no more herein.
Although the application with preferred embodiment openly as above; but it is not for limiting the application; any those skilled in the art are not departing from the spirit and scope of the application; can make possible variation and amendment, the scope that therefore protection range of the application should define with the application's claim is as the criterion.
Claims (20)
1. control a method for sodium content in CIGS thin film, it is characterized in that, comprising:
Forming sodium ion barrier layer containing on the substrate of sodium element, stop that the sodium ion in described substrate is diffused in described CIGS thin film;
Described sodium ion barrier layer forms controlled sodium active layer, the sodium ion providing content controlled for described CIGS thin film by the thickness controlling described controlled sodium active layer.
2. the method for sodium content in control CIGS thin film according to claim 1, it is characterized in that, described sodium ion barrier layer comprises the following material of at least one: silicon nitride, silica, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen zirconia, zirconia, zirconium nitride, aluminium nitride, aluminium oxide, oxidation sial, aluminium silicon nitride, silicon oxynitride aluminium, the oxide of zinc tin oxide or at least two kinds of elements being made up of at least one element in silicon, zirconium and titanium and molybdenum, nitride or nitrogen oxide.
3. the method for sodium content in control CIGS thin film according to claim 2, it is characterized in that, described sodium ion barrier layer is silicon nitride, and the thickness of described silicon nitride is more than or equal to 120nm, refractive index is 2.0 ~ 2.1.
4. the method for sodium content in control CIGS thin film according to claim 3, it is characterized in that, the thickness of described silicon nitride is 120nm ~ 150nm.
5. the method for sodium content in control CIGS thin film according to claim 1, it is characterized in that, the method on described formation sodium ion barrier layer is magnetron sputtering deposition or ion beam sputter depositing.
6. the method for sodium content in control CIGS thin film according to claim 1, is characterized in that, also comprise:
Before the controlled sodium active layer of formation, described sodium ion barrier layer forms electrode layer.
7. the method for sodium content in control CIGS thin film according to claim 6, is characterized in that, the step on described formation sodium ion barrier layer, the step of described formation electrode layer and between process carry out all under vacuum conditions.
8. the method for sodium content in control CIGS thin film according to claim 6, it is characterized in that, the method for described formation electrode layer is hydatogenesis, magnetron sputtering deposition or ion beam sputter depositing.
9. the method for sodium content in control CIGS thin film according to claim 6, is characterized in that, described electrode layer adopts molybdenum, nickel or tungsten material, and the thickness of described electrode layer is more than or equal to 250nm, resistivity is less than 14 μ Ω cm.
10. the method for sodium content in control CIGS thin film according to claim 9, it is characterized in that, the thickness of described electrode layer is 300nm ~ 350nm.
In 11. control CIGS thin film according to claim 1, the method for sodium content, is characterized in that, described controlled sodium active layer comprises the following material of at least one: sodium fluoride, sodium chloride, sodium bromide, sodium iodide, sodium carbonate, sodium sulphate, sodium acid carbonate, niter cake.
In 12. control CIGS thin film according to claim 1, the method for sodium content, is characterized in that, the method for the controlled sodium active layer of described formation is hydatogenesis, magnetron sputtering deposition or ion beam sputter depositing.
13. 1 kinds of structures for the formation of CIGS thin film solar cell, comprise containing the substrate of sodium element, dorsum electrode layer and CIGS absorbed layer, it is characterized in that:
Sodium ion barrier layer is provided with, for stopping that the sodium ion in described substrate is diffused in described CIGS absorbed layer between described substrate and described dorsum electrode layer;
Controlled sodium active layer is provided with, for the sodium ion providing content controlled for described CIGS absorbed layer between described dorsum electrode layer and described CIGS absorbed layer.
14. structures for the formation of CIGS thin film solar cell according to claim 13, it is characterized in that, described sodium ion barrier layer comprises the following material of at least one: silicon nitride, silica, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen zirconia, zirconia, zirconium nitride, aluminium nitride, aluminium oxide, oxidation sial, aluminium silicon nitride, silicon oxynitride aluminium, the oxide of zinc tin oxide or at least two kinds of elements being made up of at least one element in silicon, zirconium and titanium and molybdenum, nitride or nitrogen oxide.
15. structures for the formation of CIGS thin film solar cell according to claim 14, is characterized in that, described sodium ion barrier layer is made up of silicon nitride, and the thickness of described silicon nitride is more than or equal to 120nm, refractive index is 2.0 ~ 2.1.
16. structures for the formation of CIGS thin film solar cell according to claim 15, is characterized in that, the thickness of described silicon nitride is 120nm ~ 150nm.
17. structures for the formation of CIGS thin film solar cell according to claim 13, is characterized in that, described electrode layer adopts molybdenum, nickel or tungsten material, and the thickness of described electrode layer is more than or equal to 250nm, resistivity is less than 14 μ Ω cm.
18. structures for the formation of CIGS thin film solar cell according to claim 17, is characterized in that, the thickness of described electrode layer is 300nm ~ 350nm.
19. structures for the formation of CIGS thin film solar cell according to claim 13, is characterized in that, described controlled sodium active layer comprises the following material of at least one: sodium fluoride, sodium chloride, sodium bromide, sodium iodide, sodium carbonate, sodium sulphate, sodium acid carbonate, niter cake.
20. 1 kinds of CIGS thin film solar cells, is characterized in that, comprise the structure for the formation of CIGS thin film solar cell described in any one of claim 13 to 19 claim.
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Application publication date: 20151021 |