CN110034206B - CIGS solar cell with alkali metal composite layer and preparation method thereof - Google Patents

CIGS solar cell with alkali metal composite layer and preparation method thereof Download PDF

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CN110034206B
CN110034206B CN201910345538.9A CN201910345538A CN110034206B CN 110034206 B CN110034206 B CN 110034206B CN 201910345538 A CN201910345538 A CN 201910345538A CN 110034206 B CN110034206 B CN 110034206B
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alkali metal
electrode layer
cigs
solar cell
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CN110034206A (en
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张准
王磊
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Sunflare Nanjing Energy Technology Co ltd
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Chaozhou Yijia Photoelectric Technology Co ltd
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    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
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    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a CIGS solar cell with an alkali metal composite layer and a preparation method thereof, belongs to the technical field of CIGS solar cell thin film materials, and solves the problems that the utilization rate of doped alkali metal is low and the improvement of the cell performance is not facilitated in the prior art. The CIGS solar cell comprises an alkali metal composite layer and a CIGS layer, wherein the alkali metal composite layer comprises a first alkali metal layer and a second alkali metal layer, and the first alkali metal layer is positioned between the CIGS layer and the second alkali metal layer; the first alkali metal layer includes a metal Na, and the second alkali metal layer includes at least one of metals K and Rb. The forming method of the composite alkali metal layer comprises the steps of forming a second alkali metal layer on the substrate by adopting a second target and a magnetron sputtering process; and forming a first alkali metal layer on the second alkali metal layer by adopting a first target and a magnetron sputtering process. The CIGS solar cell with the alkali metal composite layer and the preparation method thereof can be used for solar power generation.

Description

CIGS solar cell with alkali metal composite layer and preparation method thereof
Technical Field
The invention relates to an energy-saving, environment-friendly and clean energy technology, in particular to the technical field of CIGS solar cell thin film materials, and particularly relates to a CIGS solar cell with an alkali metal composite layer and a preparation method thereof.
Background
Coal and other conventional energy sources can generate serious environmental pollution in the power generation process, and with global warming, ecological environment deterioration and shortage of conventional energy sources, more and more countries begin to vigorously develop new energy sources for energy conservation and environmental protection. Solar energy is a clean new energy source, and therefore, solar energy utilization technology is vigorously developed in various countries. The solar photovoltaic power generation has the advantages of zero emission, safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, long service life and the like, so that the solar photovoltaic power generation is concerned.
The Copper Indium Gallium Selenide (CIGS) solar cell mainly comprises Cu (copper), In (indium), Ga (gallium) and Se (selenium), and has the advantages of strong light absorption capacity, good power generation stability, high conversion efficiency, long power generation time In the daytime, high power generation amount, low production cost, short energy recovery period and the like.
A CIGS solar cell generally includes a substrate, a back electrode layer, a CIGS layer (light absorbing layer), a buffer layer, and a surface electrode layer, wherein the CIGS layer is composed of Cu (In, Ga) Se2To reduce the defect density of the CIGS layer and increase the carrier concentration, the existing solar thin film materials are usually compounds doped with alkali metals, such as NaF and Na, in the CIGS layer or the back electrode layer adjacent to the CIGS layer2Se、Na2S、Na2SeO3Or NaNbO3Etc., but new impurity elements, such as F, S, etc., are introduced during the doping process.
In addition, the alkali metal doped in the CIGS layer or the back electrode layer diffuses not only into the CIGS layer but also into other layers, thereby reducing the utilization rate of the alkali metal, and thus the conventional film material is not favorable for improving the cell performance. Therefore, a new membrane material is needed to improve the utilization of alkali metals, thereby improving the battery performance.
Disclosure of Invention
In view of the foregoing analysis, the present invention aims to provide a CIGS solar cell with an alkali metal composite layer and a method for manufacturing the same, which solve the problems of low utilization rate of alkali metal doped in the prior art and being not beneficial to improving the cell performance.
The purpose of the invention is mainly realized by the following technical scheme:
the invention provides a CIGS solar cell with an alkali metal composite layer, which comprises a substrate, a back electrode layer, a CIGS layer, a buffer layer, a surface electrode layer and the alkali metal composite layer, wherein the substrate, the back electrode layer, the CIGS layer, the buffer layer and the surface electrode layer are sequentially stacked; the first alkali metal layer comprises a metal Na, and the second alkali metal layer comprises at least one of a metal K and a metal Rb; or the first alkali metal layer includes a compound of Na and the second alkali metal layer includes at least one of a compound of K and Rb.
Secondly, the invention also provides a preparation method of the CIGS solar cell, which comprises the following steps: sequentially forming a second alkali metal layer, a first alkali metal layer, a CIGS layer, a buffer layer and a surface electrode layer on a substrate;
the method for forming the second alkali metal layer comprises the following steps: forming a second alkali metal layer on the substrate by adopting a second target and a magnetron sputtering process; the second target comprises a metal Na doped in the material of the back electrode layer;
the method for forming the first alkali metal layer comprises the following steps: forming a first alkali metal layer on the second alkali metal layer by adopting a first target and a magnetron sputtering process; the first target includes doping at least one of metals K and Rb in the material of the back electrode layer.
The invention further provides another preparation method of the CIGS solar cell, which comprises the following steps: sequentially forming a back electrode layer, an alkali metal composite layer, a CIGS layer, a buffer layer and a surface electrode layer on a substrate; or, sequentially forming a back electrode layer, a CIGS layer, an alkali metal composite layer, a buffer layer and a surface electrode layer on the substrate;
the method for forming the alkali metal composite layer includes the steps of: at least one of fluoride, selenide or sulfide of Na is evaporated in vacuum and annealed to obtain a first alkali metal layer; and (3) evaporating at least one of fluoride, sulfide or selenide of K and Rb in vacuum, and annealing to obtain a second alkali metal layer.
Finally, the invention also provides a packaging structure for packaging the CIGS solar cell, which is characterized in that the packaging structure is rectangular and comprises a protective film, a structural film, the CIGS solar cell and a back film which are compacted from top to bottom; the size of the structural film and the CIGS solar cell are the same; the size of the back film is larger than that of the CIGS solar cell; the protective film comprises a main body and edge portions, the main body is the same as the CIGS solar cell in size, the edge portions are arranged on four sides of the main body and are integrated with the main body into a whole, and the edge portions are sealed to tightly cover the side faces of the structural film and the CIGS solar cell and are tightly pressed with the back film.
Compared with the prior art, the invention has the following beneficial effects:
a) according to the invention, the alkali metal layer is designed to be a composite layer of the first alkali metal layer and the second alkali metal layer, and the first alkali metal layer is arranged between the CIGS layer and the second alkali metal layer, so that the second alkali metal layer can prevent the alkali metal in the first alkali metal layer from diffusing to other layers, and the utilization rate of the alkali metal in the first alkali metal layer is improved, thereby effectively reducing the defect density of the CIGS layer, improving the carrier concentration and further improving the photoelectric conversion efficiency of the cell.
b) The second alkali metal layer provided by the invention can also provide alkali metal for the CIGS layer, so that the defect density of the CIGS layer is further reduced, the carrier concentration is improved, and the photoelectric conversion efficiency of the cell is further improved.
c) According to the invention, the alkali metal composite layers are arranged between the CIGS layer and the buffer layer and between the CIGS layer and the back electrode layer, so that the quantity of alkali metal entering the CIGS layer is increased, the defect density of the CIGS layer is favorably reduced, the carrier concentration is increased, and the photoelectric conversion efficiency of the cell is improved.
d) According to the invention, alkali metals such as Na and K are doped in the back electrode layer (Mo), and because the alkali metals such as Na and K and the Mo belong to metals and have good compatibility, the doping of the alkali metals such as Na and K can be realized on the basis of basically not influencing the uniformity of the back electrode layer, and the alkali metals such as Na and K can be diffused to the CIGS layer from the back electrode layer, so that the energy conversion efficiency of the solar cell is improved.
e) According to the invention, Na is selected as the main alkali metal which is diffused into the CIGS layer, so that the defect density of the CIGS layer is greatly reduced compared with the defect density of the CIGS layer which is made of other alkali metals, and the carrier concentration is greatly improved, thereby the cell has higher photoelectric conversion efficiency.
f) According to the CIGS solar cell with the alkali metal composite layer, the base plate is provided with the blocking layer capable of blocking alkali metal from diffusing to the base plate, so that the alkali metal can be more favorably diffused into the CIGS layer, the defect density of the CIGS layer can be favorably reduced, the carrier concentration is improved, and the photoelectric conversion efficiency of the cell is improved.
g) According to the CIGS solar cell with the alkali metal composite layer, the mass percentage of the metal Na in the first alkali metal layer adjacent to the CIGS layer is higher than the concentration of the alkali metal in the second alkali metal layer, so that the Na concentration difference between the first alkali metal layer and the CIGS layer is increased, the infiltration amount and the infiltration depth of Na penetrating into the CIGS layer can be further increased, and the utilization rate of Na can be further increased.
h) According to the invention, the thickness of the second alkali metal layer is set to be smaller than that of the first alkali metal layer, so that on one hand, the utilization rate of alkali metal can be improved, and the purpose of improving the photoelectric conversion efficiency of the cell is achieved; on the other hand, the waste of production materials caused by the fact that the thickness of the second alkali metal layer is too thick is avoided, the phenomenon that the combination tightness among all layers of the solar cell is influenced by the fact that the thickness of the second alkali metal layer is too thick is avoided, and the process difficulty is reduced.
i) In the CIGS solar cell with the alkali metal composite layer, the concentration of alkali metal in the second alkali metal layer close to the substrate side is low, the lattice matching between the substrate and the back electrode layer can be improved, the physicochemical stress between the substrate and the back electrode layer can be reduced, and the influence of alkali metal doping on the bonding tightness between the substrate and the back electrode layer can be reduced as much as possible.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, wherein like reference numerals are used to designate like parts throughout.
The metallic sodium in the present invention is present in the form of a pure metal, an alloy or a pseudoalloy, unless otherwise specified.
FIG. 1 is a schematic structural diagram of an alkali metal composite layer according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an alkali metal composite layer as a back electrode layer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an embodiment of an alkali metal composite layer between a CIGS layer and a buffer layer;
FIG. 4 is a schematic diagram of an embodiment of the present invention in which an alkali metal composite layer is located between the CIGS layer and the back electrode layer;
fig. 5 is a schematic structural diagram of a CIGS solar cell with an alkali metal composite layer according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a first surface electrode layer in a CIGS solar cell with an alkali metal composite layer according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a second surface electrode layer in a CIGS solar cell with an alkali metal composite layer according to an embodiment of the present invention;
fig. 8 is a schematic diagram illustrating the positions of a first surface electrode layer and a shape memory alloy fiber layer in a CIGS solar cell with an alkali metal composite layer according to an embodiment of the present invention;
fig. 9 is a cross-sectional view of a transparent surface electrode layer in a CIGS solar cell with an alkali metal composite layer according to an embodiment of the present invention.
Reference numerals:
1-a substrate; 2-a back electrode layer; 21-a first electrode sublayer; 22-a second electrode sublayer; 23 a third electrode sublayer; 3-a CIGS layer; 4-a buffer layer; 5-a transparent surface electrode layer; 6-a first surface electrode layer; 61-first ITO region; 62-first IZTO zone; 7-a second surface electrode layer; 71-second ITO region; 72-second IZTO region; 8-a layer of shape memory alloy fibers; 11-an alkali metal composite layer; 111-a first alkali metal layer; 112-second alkali metal layer.
Detailed Description
The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form a part hereof, and which together with the embodiments of the invention serve to explain the principles of the invention.
Example one
The present embodiment provides a CIGS solar cell with an alkali metal composite layer, see fig. 1-6, comprising a baseThe solar cell comprises a plate 1, a back electrode layer 2, a CIGS layer 3, a buffer layer 4 and a transparent surface electrode layer 5, wherein an alkali metal composite layer 11 is arranged between the CIGS layer and the back electrode layer, the alkali metal composite layer 11 comprises a first alkali metal layer 111 and a second alkali metal layer 112, and the first alkali metal layer 111 is positioned between the CIGS layer 3 and the second alkali metal layer 112. Specifically, the first alkali metal layer 111 contains a fluoride, sulfide, selenide, or the like of Na, such as NaF, Na2Se、Na2S、Na2SeO3Or NaNbO3The second alkali metal layer 112 contains a fluoride, sulfide or selenide of K and Rb, preferably a fluoride, sulfide or selenide of K.
Compared with the prior art, in the CIGS solar cell with the alkali metal composite layer provided by the embodiment, the alkali metal layer 11 is designed to be the composite layer of the first alkali metal layer 111 and the second alkali metal layer 112, and the first alkali metal layer 111 is arranged between the CIGS layer 3 and the second alkali metal layer 112, so that the second alkali metal layer 112 can prevent alkali metal in the first alkali metal layer 111 from diffusing to other layers, and the utilization rate of alkali metal in the first alkali metal layer 111 is improved, thereby effectively reducing the defect density of the CIGS layer 3, improving the carrier concentration, and further improving the photoelectric conversion efficiency of the cell.
Meanwhile, since the second alkali metal layer 112 also contains an alkali metal, the second alkali metal layer 112 can also supply an alkali metal to the CIGS layer 3, thereby further reducing the defect density of the CIGS layer 3, increasing the carrier concentration, and further improving the photoelectric conversion efficiency of the cell.
In order to increase the amount of alkali metal entering the CIGS layer 3, this embodiment also provides an alkali metal composite layer between the CIGS layer 3 and the buffer layer 4. Specifically, the first alkali metal layer 111 is located on the side close to the CIGS layer 3, and the second alkali metal layer 111 is located on the side close to the buffer layer 4.
It is emphasized that the mass percentage of the metal Na in the first alkali metal layer 111 adjacent to the CIGS layer 3 is higher than the mass percentage of the alkali metal in the second alkali metal layer 112. This is because the first alkali metal layer 111 contains a high amount of Na by mass, and the Na concentration difference between the first alkali metal layer 111 and the CIGS layer 3 is increased, so that the amount and depth of Na penetration into the CIGS layer 3 can be increased, and the Na utilization rate can be increased. Further, since the second alkali metal layer 112 close to the back electrode layer 2 contains an alkali metal in a lower percentage by mass, the amount of penetration and the depth of penetration of the alkali metal into the back electrode layer 2 can be reduced.
Meanwhile, the thickness of the second alkali metal layer 112 is smaller than that of the first alkali metal layer 111. This is because, on the one hand, the thin thickness of the second alkali metal layer 112 can improve the utilization rate of the alkali metal, thereby achieving the purpose of improving the photoelectric conversion efficiency of the cell; on the other hand, the waste of production materials caused by the fact that the thickness of the second alkali metal layer is too thick is avoided, the phenomenon that the combination tightness among all layers of the solar cell is influenced by the fact that the thickness of the second alkali metal layer is too thick is avoided, and the process difficulty is reduced.
Example two
The present embodiment provides a CIGS solar cell having an alkali metal composite layer, referring to fig. 1 to 6, including a substrate 1, an alkali metal composite layer 11 (as a back electrode layer), a CIGS layer 3, a buffer layer 4, and a transparent surface electrode layer 5, wherein the alkali metal composite layer 11 includes a first alkali metal layer 111 and a second alkali metal layer 112, and the first alkali metal layer 111 is located between the CIGS layer 3 and the second alkali metal layer 112. Specifically, the first alkali metal layer 111 includes doping the metal Na in the back electrode layer, and the second alkali metal layer 112 includes doping at least one of the metals K and Rb in the back electrode layer. Preferably, the second alkali metal layer 112 includes doping the metal K in the back electrode layer.
Compared with the prior art, a part of the beneficial effects of the CIGS solar cell with the alkali metal composite layer provided in this embodiment are substantially the same as the beneficial effects of the CIGS solar cell doped with metal Na provided in the first embodiment, and detailed descriptions thereof are omitted here. Another part of the beneficial effects of this embodiment are: because alkali metals such as Na, K and the like and Mo belong to metals, and the alkali metals such as Na, K and the like and Mo have good compatibility, the doping of the alkali metals such as Na, K and the like can be realized on the basis of basically not influencing the uniformity of the back electrode layer, the alkali metals such as Na, K and the like can be diffused to the CIGS layer from the back electrode layer, and the energy conversion efficiency of the solar cell is improved.
Meanwhile, in the CIGS solar cell doped with the metal Na provided by the embodiment, the back electrode layer is doped with pure metal sodium, so that new impurity elements cannot be introduced in the doping process, and the performance of the CIGS solar cell is ensured.
In general, the adhesion between the back electrode layer 2 and the substrate 1 is affected to a certain extent by doping Na, and in the CIGS solar cell having the alkali metal composite layer 11 provided in this embodiment, the concentration of the alkali metal in the second alkali metal layer 112 near the substrate 1 is low, so that the lattice matching between the substrate 1 and the back electrode layer can be improved, the physicochemical stress between the two can be reduced, and the influence of the alkali metal doping on the adhesion between the two can be minimized.
In view of the above, the substrate 1 of the present embodiment is specially treated so that the alkali metal in the alkali metal composite layer 11 does not diffuse into the substrate 1, considering that the alkali metal in the alkali metal composite layer 11 inevitably diffuses into the substrate 1, thereby reducing the amount of the alkali metal diffusing into the CIGS layer 3. Alternatively, a barrier layer is provided on the substrate 1 and the alkali metal composite layer 11 to prevent the alkali metal element from diffusing into the substrate 1.
EXAMPLE III
In order to improve the water vapor barrier property of the CIGS layer, the transparent surface electrode layer 5 may be made of Indium Zinc Tin Oxide (IZTO), as shown in fig. 7 to 9. The IZTO is adopted to replace a common material ITO of the transparent surface electrode layer 5, the structural compactness of the IZTO is better than that of the ITO, and the water vapor barrier property of the IZTO is higher than that of the ITO, so that the transparent surface electrode layer 5 made of the IZTO can better protect the buffer layer 4 and the CIGS layer 3 which are sensitive to water vapor, and the working stability of the barrier CIGS solar cell is improved.
Considering that the light transmittance of the IZTO is lower than that of the ITO, in order to reduce the influence of the IZTO on the light transmittance of the transparent surface electrode layer 5, the transparent surface electrode layer 5 may have a double-layer structure including a first surface electrode layer 6 and a second surface electrode layer 7, one of which contains the IZTO and the other of which contains the ITO, that is, the transparent surface electrode layer 5 contains both the IZTO and the ITO, so that the transparent surface electrode layer can have both good water vapor barrier property of the IZTO and good light transmittance of the ITO, and the water vapor barrier property can be improved on the basis of not influencing the light transmittance of the transparent surface electrode layer 5. The relative positions of the first surface electrode layer 6 and the second surface electrode layer 7 may be adjusted so that the first surface electrode layer 6 is close to the buffer layer 4 or the second surface electrode layer 7 is close to the buffer layer 4.
As for the structure of the first surface electrode layer 6, specifically, it may include a continuous first ITO region 61 and a plurality of first IZTO regions 62 disposed in the first ITO region 61 and distributed in a matrix, similarly, the second surface electrode layer 7 may include a continuous second IZTO region 72 and a plurality of second ITO regions 71 disposed in the second IZTO region 72 and distributed in a matrix, so that, from the perspective of the transparent surface electrode layer 5 as a whole, it has both an IZTO structure and an ITO structure, and the structure is relatively uniform, thereby enabling to improve moisture barrier property without affecting the light transmittance of the transparent surface electrode layer 5.
In order to further improve the light transmittance and the water vapor barrier property of the barrier CIGS solar cell, the first ITO region 61 and the second ITO region 71 are projected on the solar cell substrate 1 as a continuous plane, and the first IZTO region 62 and the second IZTO region 72 are projected on the solar cell substrate 1 as a continuous plane. That is, the shape and size of the first ITO region 61 and the second IZTO region 72 are the same, and the position of the first IZTO region 62 and the second ITO region 71 are the same, so that the first IZTO region 62 and the second IZTO region 72 can form a complete film structure with good water vapor barrier property, thereby further improving the light transmittance and water vapor barrier property of the barrier CIGS solar cell.
In order to improve the uniformity of the entire transparent surface electrode layer 5, the ratio of the area of the first ITO region 61 to the total area of the plurality of first IZTO regions 62 may be controlled to be 1.2 to 1.5, and the ratio of the area of the same second IZTO region 72 to the total area of the plurality of second ITO regions 71 may be controlled to be 1.2 to 1.5.
Considering that the size and distribution density of the first IZTO regions 62 and the second ITO regions 71 also affect the uniformity of the transparent surface electrode layer 5 as a whole, when the first IZTO regions 62 and the second ITO regions 71 are square, the ratio of the gap between two adjacent first IZTO regions 62 to the side length of the first IZTO regions 62 may be controlled to be 0.4 to 0.6, and similarly, the ratio of the gap between two adjacent second ITO regions 71 to the side length of the second ITO regions 71 may be controlled to be 0.4 to 0.6.
In view of the fact that the CIGS solar cell needs to be exposed to the external environment for a long time and is sensitive to its own structure, especially for the transparent surface electrode layer 5, which is located on the surface of the CIGS solar cell and is exposed to sunlight for a long time, the transparent surface electrode layer is easily deformed under high temperature or external impact, and thus the overall operation stability of the CIGS solar cell is affected, the shape memory alloy fiber layer 8 may be disposed between the first surface electrode layer 6 and the second surface electrode layer 7. The shape memory alloy fiber has the functions of self-diagnosis, self-adaptation, self-repair and the like. When the transparent surface electrode layer 5 is deformed at a high temperature or by external impact, the shape memory alloy fibers can promote the transparent surface electrode layer 5 to be restored to an original state before the transparent surface electrode layer is deformed, so that the deformation amount of the transparent surface electrode layer 5 is reduced, the working stability of the whole CIGS solar cell is improved, and the service life of the CIGS solar cell is prolonged.
In order to reduce the influence of the addition of the shape memory alloy fiber layer 8 on the light transmittance, the shape may be a mesh shape. In this way, sunlight can enter the CIGS solar cell through the shape memory alloy fiber layer 8, and only the mesh line portions affect the sunlight, so that the effect of the addition of the shape memory alloy fiber layer 8 on the light transmittance can be minimized.
Illustratively, the grid lines of the grid-like shape memory alloy fiber layer 8 may coincide with connecting lines of the first ITO region 61, the second ITO region 71, the first IZTO region 62, and the second IZTO region 72. This is because, since the connecting lines of the first ITO region 61, the second ITO region 71, the first IZTO region 62, and the second IZTO region 72 are the junctions of the four regions, the light transmittance is relatively poor here in consideration of the influence of the processing process and the material, and the grid lines overlap with the connecting lines, and the addition of the grid-like shape memory alloy fiber layer 8 affects only the light transmittance of the connecting line portion having relatively poor light transmittance without affecting other portions of the transparent surface electrode layer 5, and the influence of the addition of the shape memory alloy fiber layer 8 on the light transmittance can be further reduced.
Considering that the electrode of the transparent surface electrode layer 5 generates heat due to resistance in the actual working process, the transparent surface electrode layer 5 may be doped with nano silver (Ag) particles, because the thermal conductivity of Ag is better than that of ITO and IZTO, and the doping of Ag in the transparent surface electrode layer 5 can improve the overall thermal conductivity of the transparent surface electrode layer 5, so that the heat generated by the electrode can be diffused into the environment more quickly, and the damage of the electrode due to resistance heating is reduced. Meanwhile, it is worth noting that the transparent surface electrode layer 5 has a high requirement on light transmittance, and in order to reduce the influence of Ag doping on the light transmittance of the transparent surface electrode layer 5, Ag nanoparticles can be used for doping, and the light absorption of the nano-sized Ag particles is small.
In order to further improve the photoelectric properties and stability of the transparent surface electrode layer 5, zirconium (Zr) may be doped therein.
Example four
The embodiment provides a preparation method of a CIGS solar cell with an alkali metal composite layer, which comprises the following steps: forming a second alkali metal layer 112, a first alkali metal layer 111, a CIGS layer 3, a buffer layer 4, and a surface electrode layer 5 on a substrate 1 in this order;
the method for forming the second alkali metal layer 112 includes the steps of: forming a second alkali metal layer on the substrate by adopting a second target and a magnetron sputtering process; the second target comprises a metal Na doped in the material of the back electrode layer;
the method of forming the first alkali metal layer 111 includes the steps of: forming a first alkali metal layer on the second alkali metal layer by adopting a first target and a magnetron sputtering process; the first target includes doping the material of the back electrode layer with at least one of metal K or Ru.
Compared with the prior art, the beneficial effects of the method for manufacturing the CIGS solar cell with the alkali metal composite layer according to the embodiment are substantially the same as those of the CIGS solar cell with the alkali metal composite layer according to the first embodiment and the second embodiment, and detailed descriptions thereof are omitted here.
Specifically, the first target includes a metal Mo doped with pure Na, and the doping amount (mass percentage, the same applies hereinafter) of Na in the first target is the same as the doping amount of Na in the first alkali metal layer 111; the second target comprises pure metal K doped in metal Mo, and the doping amount of K in the second target is the same as that of K in the second alkali metal layer 112. The method for forming the alkali metal composite layer 11 (back electrode layer) includes the steps of:
step 1: placing a Na-Mo target material in a film forming area, placing a K-Mo target material in a non-film forming area, adjusting the magnetic field intensity corresponding to the Na-Mo target material to be 20-55 mT, the working pressure to be 0.2-2 Pa, the working frequency to be 2.5-4 MHz, the target base distance to be 50-100 mm, and the sputtering time to be 30-50 seconds;
step 2: placing a K-Mo target material in a film forming area, placing a Na-Mo target material in a non-film forming area, adjusting the magnetic field intensity corresponding to the K-Mo target material to be 20-55 mT, the working pressure to be 0.2-2 Pa, the working frequency to be 2.5-4 MHz, the target base distance to be 50-100 mm, and the sputtering time to be 5-15 seconds.
In the above CIGS manufacturing method, two targets are used, and the alkali metal doping amount of each target is the same as that of the alkali metal layer to be formed, so that the second alkali metal layer 112 and the first alkali metal layer 111 can be sequentially formed by adjusting the magnetic field strength and the target located in the film forming region, and the target does not need to be replaced in the forming process, thereby improving the forming efficiency of the alkali metal composite layer 11 (back electrode layer).
EXAMPLE five
This example provides another method of making a CIGS solar cell with an alkali metal composite layer, comprising the steps of: sequentially forming a back electrode layer 2, an alkali metal composite layer 11, a CIGS layer 3, a buffer layer 4 and a transparent surface electrode layer 5 on a substrate 1; alternatively, the back electrode layer 2, the CIGS layer 3, the alkali metal composite layer 11, the buffer layer 4, and the transparent front electrode layer 5 are formed on the substrate 1 in this order;
the method of forming the alkali metal composite layer 11 includes the steps of: at least one of fluoride, selenide and sulfide of Na is evaporated in vacuum and annealed to obtain a first alkali metal layer 111; and (3) evaporating at least one of fluoride, sulfide or selenide of K and Rb in vacuum, and annealing to obtain a second alkali metal layer.
In the above-described production method, the annealing functions to diffuse alkali metal ions into the CIGS layer 3.
Compared with the prior art, the beneficial effects of the method for manufacturing the CIGS solar cell with the alkali metal composite layer according to the embodiment are substantially the same as those of the CIGS solar cell with the alkali metal composite layer according to the first embodiment, and detailed descriptions thereof are omitted here.
Specifically, a fluoride of Na is evaporated and deposited on the CIGS layer 3 under a vacuum condition to obtain a first alkali metal layer 111, a fluoride of K is evaporated and deposited on the first alkali metal layer 111 under a vacuum condition to obtain a second alkali metal layer 112, and then an inert gas is introduced, heated to 400 ℃, maintained for 20min, and cooled to room temperature to obtain the alkali metal composite layer 11.
Note that, if the alkali metal composite layer 11 is provided between the back electrode layer 2 and the CIGS layer 3, the second alkali metal layer 112 is prepared, and then the first alkali metal layer 111 is prepared on the second alkali metal layer 112.
Preferably, the alkali metal ions diffuse into the CIGS layer 3 after annealing, and the above-mentioned preparation method further includes removing residual alkali metal on the CIGS layer 3 in order to reduce the influence of the alkali metal on the bonding adhesion of both the CIGS layer 3 and the buffer layer 4. Specifically, the residue of alkali metal on the CIGS layer 3 is removed by soaking, ultrasonic treatment and rinsing in sequence, and then dried by nitrogen.
EXAMPLE six
The embodiment provides a method for forming a surface electrode layer, which comprises the following steps: forming a first surface electrode layer and a second surface electrode layer on the surface of the buffer layer; the first surface electrode layer is prepared by the following method: the method comprises the steps of forming an ITO layer by adopting a sputtering process, forming a plurality of IZTO accommodating grooves distributed in a matrix mode on the ITO layer by adopting an etching process, forming a first IZTO area in the plurality of IZTO accommodating grooves by adopting the sputtering process, and enabling the non-etched part of the ITO layer to be the first ITO area. The second surface electrode layer is prepared by the following method: the method comprises the steps of forming an IZTO layer by adopting a sputtering process, forming a plurality of ITO containing grooves which are distributed in a matrix mode on the IZTO layer by adopting an etching process, forming second ITO areas in the plurality of ITO containing grooves by adopting the sputtering process, and enabling the non-etched parts of the IZTO layer to be the second IZTO areas.
When the shape memory alloy fiber layer is arranged between the first surface electrode layer and the second surface electrode layer, the forming method of the surface electrode layer comprises the following steps:
step a: paving shape memory alloy fibers on the surface of the first surface electrode layer;
step b: carrying out hot pressing on the shape memory alloy fibers to enable part of the shape memory alloy fibers to be embedded into the first surface electrode layer, so as to obtain a shape memory alloy fiber layer;
step c: and forming a second surface electrode layer on the first surface electrode layer and the surface of the shape memory alloy fiber layer.
Alternatively, the method for forming the surface electrode layer includes the steps of:
step a': laying shape memory alloy fibers on the surface of the second surface electrode layer;
step b': carrying out hot pressing on the shape memory alloy fibers to enable part of the shape memory alloy fibers to be embedded into the second surface electrode layer, so as to obtain a shape memory alloy fiber layer;
step c': and forming a first surface electrode layer on the second surface electrode layer and the surface of the shape memory alloy fiber layer.
The shape memory alloy fibers, the first surface electrode layer and the second surface electrode layer can be tightly combined by adopting a hot pressing process, so that the phenomenon that gaps are formed among the shape memory alloy fibers, the first surface electrode layer and the second surface electrode layer, and the overall performance of the CIGS solar cell is influenced is avoided. It should be noted that the two methods are substantially the same, and only the relative positions of the first surface electrode layer and the second surface electrode layer are appropriately adjusted.
In order to make the combination of the shape memory alloy fiber and the first surface electrode layer and the second surface electrode layer more compact, the shape memory alloy fiber can be pretreated, and the pretreatment comprises the following steps: and sequentially grinding and polishing the surface of the shape memory alloy fiber, carrying out acid etching for 20-30 s, cleaning and drying. The shape memory alloy fiber is polished, so that an oxide layer on the surface of the shape memory alloy fiber can be removed, and the next step of acid etching is more sufficient. The acid etching process is substantially a process of increasing the surface area of the shape memory alloy fiber, and the acid etched shape memory alloy fiber is fully contacted in the subsequent hot pressing process, so that the first surface electrode layer, the second surface electrode layer and the shape memory alloy fiber are combined more tightly.
For the hot pressing process, the hot pressing temperature, the hot pressing pressure and the hot pressing time are important process conditions for fully stretching the shape memory alloy fibers, the hot pressing temperature is preferably 800-900 ℃, the hot pressing pressure is preferably 100-120 MPa, and the hot pressing time is preferably 3-4 h.
EXAMPLE seven
The embodiment provides a CIGS solar cell, which comprises a substrate, and a back electrode layer, a reflecting layer, an absorbing layer, a buffer layer and a transparent surface electrode layer which are sequentially stacked on the substrate; be equipped with the alkali metal and mix the composite bed between reflector layer and the absorbed layer, the at least corresponding passageway that is equipped with on alkali metal mixes composite bed and the reflector layer, the passageway bottom is back electrode layer, the below protrusion of absorbed layer is partly, this protrusion is filled in this passageway, and the lateral wall and the direct physical contact of Mo electrode thin layer of this protrusion, the bottom and the direct physical contact of back electrode layer of this protrusion, fill in this passageway through the protrusion with the absorbed layer, make the absorbed layer can carry out good physical contact with Mo electrode thin layer 5 and back electrode layer, and then convert the absorbed light energy of absorbed layer into electric energy and carry away, improve light energy conversion efficiency.
The substrate in the embodiment is a flexible substrate, and the flexible substrate 1 enables the CIGS solar cell to have flexibility, foldability and crash resistance, so that the CIGS solar cell can better match the curved surface modeling of a ground photovoltaic building and the requirements of a mobile photovoltaic power station, is easy to implement, is further beneficial to large-scale popularization and application of the CIGS solar cell, and finally promotes the development of the CIGS solar cell.
The back electrode layer of this embodiment is Mo back electrode composite construction, and Mo back electrode composite construction includes first son Mo electrode layer, first stress buffer layer, the son Mo electrode layer of second, second stress buffer layer and the son Mo electrode layer of third from top to bottom in proper order, and the thickness of first son Mo electrode layer, the son Mo electrode layer of second and the son Mo electrode layer of third reduces in proper order.
Because Mo has good conductivity, chemical stability and physical properties, and can form ohmic contact with a CIGS thin film, the present embodiment adopts a Mo back electrode composite structure, a first sub Mo electrode layer of the Mo back electrode composite structure contacts with a reflective layer and a third CIGS absorber layer, a first stress buffer layer, a second sub Mo electrode layer, a second stress buffer layer and a third sub Mo electrode layer are sequentially disposed below the first sub Mo electrode layer, and a polyimide thin film layer is disposed below the third sub Mo electrode layer, and by designing the back electrode layer as the Mo back electrode composite structure, the resistivity of the CIGS solar cell can be greatly reduced, and the reflectance ratio is higher, which plays an important role in improving the efficiency of the flexible substrate CIGS solar cell; on the other hand, the Mo back electrode composite structure can effectively reduce the problem of overlarge stress caused by the mismatching of the thermal expansion coefficients between the polyimide film and the back electrode layer; on the other hand, the Mo back electrode composite structure can greatly improve the reflectivity of the back electrode layer in red light and near infrared regions, and improve the efficiency of the CIGS solar cell.
In order to further solve the problem of mismatch of thermal expansion coefficients between the flexible layer and the back electrode layer, in this embodiment, the first stress buffer layer and the second stress buffer layer are both Ag thin film layers, and the thickness of the first stress buffer layer is greater than that of the second stress buffer layer. The Ag film has lower resistivity and good conductivity, so that the first stress buffer layer and the second stress buffer layer arranged in the back electrode layer can balance the thermal expansion coefficient between the polyimide film and the back electrode layer to the maximum extent, and in addition, the first buffer layer, the second buffer layer and the third buffer layer can effectively prevent Ag from diffusing to the third CIGS absorption layer, thereby preventing the performance of the CIGS thin film battery from being influenced by the diffusion of Ag.
The transparent surface electrode layer in this embodiment is an ITO-Ag-ITO transparent thin film layer, and an Al electrode is provided on the ITO-Ag-ITO transparent thin film layer. The visible light permeability and the electric conductivity of the Ag film layer are high, and compared with a single-layer ITO film, the high-transparency composite conductive layer ITO-Ag-ITO film has the advantages that the electric conductivity is strong, and the sheet resistance is smaller; in addition, the thickness of the high-transparency composite conductive layer ITO-Ag-ITO film is 0.3-0.8 μm; the thickness of the ITO film is approximately the same as that of a single-layer ITO film, In the ITO film is greatly saved, and the cost of the ITO is finally reduced.
In addition, a tin electrode may be disposed on the transparent surface electrode layer in this embodiment, and the tin electrode is welded on the surface of the transparent surface electrode by an ultrasonic welding method. In the prior art, a tin electrode is printed on a transparent surface electrode by adopting a screen printing mode, when the mode is adopted for printing, a large shading area is generated when molten slurry is paved on the transparent surface electrode, the contact resistance is increased, and the electric energy output of the whole CIGS solar thin-film battery component is further reduced; when the ultrasonic welding tin-coated electrode provided by the invention is adopted, the contact resistance between the tin-coated electrode and the transparent surface electrode can be directly reduced, and the shading area can be reduced, so that the integral electric energy output of the CIGS solar thin-film cell module is improved
In the present embodiment, both the ITO-Ag interface and the Ag-ITO interface in the ITO-Ag-ITO transparent thin film layer are corrugated. The corrugated structure can form a light trap in the CIGS solar thin film cell to reduce the loss of incident light and increase the short-circuit current and the quantum efficiency of the cell, because in the process of transmitting electromagnetic waves in the CIGS solar thin film cell, the electromagnetic waves reflected by the wall surface and the incident electromagnetic waves are mutually superposed to form standing waves, so that the electromagnetic energy is bound in the absorbing layer of the CIGS solar energy and is completely absorbed, the absorption rate of the incident light is improved, and the output performance of the CIGS solar thin film cell is finally improved
In order to prevent incident light which is not absorbed after passing through the absorption layer from being transmitted out through the back electrode layer, a first light trapping structure is arranged between the flexible substrate and the back electrode layer, and a corrugated Ag thin film is arranged at the interface of the first light trapping structure and the back electrode layer; the first light trapping structure is used for increasing the optical path of incident light in the CIGS solar thin film cell. The first light trapping structure is arranged between the flexible substrate and the back electrode layer, light transmitted through the absorption layer can be blocked, the part of transmitted light can be reflected to the absorption layer by the corrugated Ag film, the part of transmitted light reflected by the first light trapping structure enters the absorption layer above the back electrode layer again, the optical path of incident light in the CIGS solar thin film battery is increased, the incident light is fully absorbed, the incident light absorption performance is improved, and the current and the quantum efficiency of the battery are increased.
In order to reduce the reflection of incident light and increase the optical path of the incident light in the CIGS solar thin film cell, the optical thin film coating is disposed on the upper surface of the transparent surface electrode layer in this embodiment, so as to increase the light absorption rate and further improve the cell performance. The optical film coating sequentially comprises a first indium tin oxide layer, a nano silicon dioxide layer, a nano titanium dioxide layer and a second indium tin oxide layer from top to bottom.
Example eight
The embodiment discloses a packaging structure of a thin-film solar cell, which is rectangular and comprises a protective film, a structural film and a back film which are compressed from top to bottom, wherein the CIGS solar cell is positioned between the structural film and the back film. In general, a CIGS solar cell is generally formed in a rectangular shape for convenience of processing, and a CIGS solar cell is a core object of a package, so that the package structure is rectangular. The size of the structural film and the CIGS solar cell are the same; the size of the back film is larger than that of the CIGS solar cell; the protective film comprises a main body and edge portions, the main body is the same as the CIGS solar cell in size, the edge portions are arranged on four sides of the main body and are integrated with the main body into a whole, and the edge portions are sealed to tightly cover the side faces of the structural film and the CIGS solar cell and are tightly pressed with the back film. In the packaging structure, a main body of the protective film, a structural film and the CIGS solar cell are used as the core of the main laminated packaging, and the sizes of the main laminated packaging and the structural film are required to be equal; the edge of the protective film is used for packaging the side edge, so that the width of the edge is equal to that of the corresponding side edge, the length of the edge is greater than the thickness of the solar thin film cell, and the excess part is used for being bonded with the back film to realize the fixation of the edge and the internal packaging.
The packaging structure of the embodiment of the invention is equivalent to packaging the main illumination surface and the side surface of the solar thin film battery by using the protective film at the same time, and does not need to use special side packaging materials, thereby simplifying the packaging structure of the solar thin film battery.
In order to ensure that the solar thin-film battery obtains the photoelectric conversion efficiency as large as possible on the premise of ensuring the water-blocking function of the packaging structure, in the embodiment of the invention, the protective film is an ETFE film; the structural film is an EEA film; the back film is a double-layer film, one layer in contact with the CIGS is a DNP film, and the other layer is a PET film.
In the embodiment of the present invention, the light incident surface is required to have a good light transmittance because of the solar cell, and specifically, the ETFE film, the EEA film, and the like are all transparent materials.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (10)

1. A CIGS solar cell with an alkali metal composite layer comprises a substrate, a back electrode layer, a CIGS layer, a buffer layer and a surface electrode layer which are sequentially stacked, and is characterized by further comprising the alkali metal composite layer, wherein the alkali metal composite layer comprises a first alkali metal layer and a second alkali metal layer, and the first alkali metal layer is positioned between the CIGS layer and the second alkali metal layer;
the first alkali metal layer comprises a metal Na, and the second alkali metal layer comprises at least one of a metal K and Rb; or the first alkali metal layer comprises a compound of Na and the second alkali metal layer comprises at least one of a compound of K and Rb;
the second alkali metal layer is used for preventing the alkali metal in the first alkali metal layer from diffusing to other layers, and the thickness of the second alkali metal layer is smaller than that of the first alkali metal layer;
the mass percentage content of the metal Na in the first alkali metal layer is higher than that of the metal K and Rb in the second alkali metal layer; na is the main alkali metal that diffuses into the CIGS layer;
the surface electrode layer is a transparent surface electrode layer, and the transparent surface electrode layer is of a double-layer structure and comprises a first surface electrode layer and a second surface electrode layer;
the first surface electrode layer comprises a continuous first ITO (indium tin oxide) area and a plurality of first IZTO areas which are positioned in the first ITO area and distributed in a matrix manner; the second surface electrode layer comprises a continuous second IZTO area and a plurality of second ITO areas which are positioned in the second IZTO area and distributed in a matrix manner;
the projections of the first ITO area and the second ITO area on the substrate are continuous planes, and the projections of the first IZTO area and the second IZTO area on the substrate are continuous planes;
a shape memory alloy fiber layer is arranged between the first surface electrode layer and the second surface electrode layer; the shape of the shape memory alloy fiber layer is in a grid shape;
the substrate is a polyimide film flexible substrate;
the back electrode layer is of a Mo back electrode composite structure, the Mo back electrode composite structure sequentially comprises a first sub Mo electrode layer, a first stress buffer layer, a second sub Mo electrode layer, a second stress buffer layer and a third sub Mo electrode layer from top to bottom, and the thicknesses of the first sub Mo electrode layer, the second sub Mo electrode layer and the third sub Mo electrode layer are sequentially reduced;
the first stress buffer layer and the second stress buffer layer are both Ag thin film layers, and the thickness of the first stress buffer layer is larger than that of the second stress buffer layer;
the back electrode layer is arranged between the back electrode layer and the CIGS layer, the alkali metal composite layer is arranged between the reflecting layer and the CIGS layer, at least one channel is correspondingly arranged on the alkali metal composite layer and the reflecting layer, the bottom of the channel is the back electrode layer, a part protrudes from the lower part between the CIGS layers, the protruding part is filled in the channel, the side wall of the protruding part is in direct physical contact with the Mo electrode thin film layer, and the bottom of the protruding part is in direct physical contact with the back electrode layer.
2. The CIGS solar cell with an alkali metal composite layer as claimed in claim 1 wherein the alkali metal composite layer serves as a back electrode layer, the first alkali metal layer comprises a back electrode layer doped with Na, and the second alkali metal layer comprises a back electrode layer doped with at least one of K and Rb.
3. The CIGS solar cell with an alkali metal composite layer as recited in claim 1 wherein the first alkali metal layer comprises at least one of a fluoride, sulfide or selenide of Na.
4. The CIGS solar cell with an alkali metal composite layer as claimed in claim 1 wherein the second alkali metal layer includes at least one of fluorides, sulfides or selenides of K and Rb.
5. The CIGS solar cell with an alkali metal composite layer, according to claim 3, comprising a substrate, a back electrode layer, a CIGS layer, a buffer layer and a front electrode layer, which are sequentially stacked, wherein the alkali metal composite layer is provided at least one of between the CIGS layer and the buffer layer and between the CIGS layer and the back electrode layer.
6. The CIGS solar cell with an alkali metal composite layer as claimed in claim 5 wherein the substrate is provided with a barrier layer capable of blocking diffusion of alkali metal to the substrate.
7. A method for manufacturing a CIGS solar cell with an alkali metal composite layer according to any one of claims 1 to 6, comprising the steps of: sequentially forming a second alkali metal layer, a first alkali metal layer, a CIGS layer, a buffer layer and a surface electrode layer on a substrate;
the method for forming the second alkali metal layer comprises the following steps: forming a second alkali metal layer on the substrate by adopting a second target and a magnetron sputtering process; the second target comprises a metal Na doped in the material of the back electrode layer;
the method for forming the first alkali metal layer comprises the following steps: forming a first alkali metal layer on the second alkali metal layer by adopting a first target and a magnetron sputtering process; the first target comprises at least one of metals K and Rb doped in the material of the back electrode layer;
the first target comprises metal Na doped in metal Mo, and the second target comprises metal K doped in metal Mo;
the method for forming the alkali metal composite layer specifically comprises the following steps:
step 1: placing a first target material in a film forming area, placing a second target material in a non-film forming area, adjusting the magnetic field intensity corresponding to the first target material to be 20-55 mT, the working pressure to be 0.2-2 Pa, the working frequency to be 2.5-4 MHz, the target base distance to be 50-100 mm, and the sputtering time to be 30-50 seconds;
step 2: and placing the second target material in the film forming area, placing the first target material in the non-film forming area, adjusting the magnetic field intensity corresponding to the second target material to be 20-55 mT, adjusting the working pressure to be 0.2-2 Pa, adjusting the working frequency to be 2.5-4 MHz, adjusting the target base distance to be 50-100 mm, and adjusting the sputtering time to be 5-15 seconds.
8. A method for manufacturing a CIGS solar cell with an alkali metal composite layer according to any one of claims 1 to 6, comprising the steps of: sequentially forming a back electrode layer, an alkali metal composite layer, a CIGS layer, a buffer layer and a surface electrode layer on a substrate; or, sequentially forming a back electrode layer, a CIGS layer, an alkali metal composite layer, a buffer layer and a surface electrode layer on the substrate;
the method for forming the alkali metal composite layer comprises the following steps: at least one of fluoride, selenide or sulfide of Na is evaporated in vacuum and annealed to obtain a first alkali metal layer; and (3) evaporating at least one of fluoride, sulfide or selenide of K and Rb in vacuum, and annealing to obtain a second alkali metal layer.
9. An encapsulation structure for encapsulating the CIGS solar cell as claimed in any of claims 1 to 6, wherein the encapsulation structure is rectangular and comprises a protective film, a structural film and a back film which are compressed from top to bottom; a CIGS solar cell is located between the structural film and the back film;
the structural film and the CIGS solar cell are the same size;
the size of the back film is larger than that of the CIGS solar cell;
the protective film comprises a main body and edges, the size of the main body is the same as that of the CIGS solar cell, the edges are arranged on four sides of the main body and are integrated with the main body into a whole, and the edges tightly cover the side faces of the structural film and the CIGS solar cell in a sealing mode and are tightly pressed with the back film.
10. The CIGS solar cell encapsulation structure as claimed in claim 9, wherein the structural film is an EEA film.
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