CN110120436B - Double-section CIGS solar cell and preparation method thereof - Google Patents
Double-section CIGS solar cell and preparation method thereof Download PDFInfo
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
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- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
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- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a double-section CIGS (copper indium gallium selenide) solar cell and a preparation method thereof, belongs to the technical field of CIGS solar cells, and solves the problem of poor light/heat/humidity stability of the double-section CIGS solar cell in the prior art. The cell comprises a back electrode layer, a first absorption layer, a buffer layer, a first transparent electrode layer, a transparent insulating layer, a second transparent electrode layer, a second absorption layer and a third transparent electrode layer which are laminated on a substrate in sequence; the first and second absorption layers have different band gap widths. The preparation method comprises the steps of sequentially arranging a back electrode layer, a first absorption layer, a buffer layer, a first transparent electrode layer, a second absorption layer and a third transparent electrode layer on a substrate. The double-section CIGS solar cell and the preparation method thereof can be used for solar power generation.
Description
Technical Field
The invention relates to a CIGS solar cell technology, in particular to a double-section CIGS solar cell and a preparation method thereof.
Background
The CIGS solar cell belongs to clean energy, is energy-saving and environment-friendly, mainly comprises Cu (copper), In (indium), Ga (gallium) and Se (selenium), and has the advantages of strong light absorption capacity, good power generation stability, high conversion efficiency, long power generation time In the daytime, high power generation amount, low production cost, short energy recovery period and the like.
In the prior art, the single-section CIGS solar cell has low light energy utilization rate, so that a double-section GICS solar cell can be formed by superposing a layer of perovskite on the single-section CIGS solar cell, and unabsorbed photons passing through an upper perovskite layer can be continuously absorbed in a lower first absorption layer, thereby improving the conversion rate.
However, perovskites have poor light/heat/humidity stability and are prone to failure, thereby affecting the operational stability of perovskite-based dual-segment CIGS solar cells.
Disclosure of Invention
In view of the foregoing analysis, the present invention aims to provide a double-segmented CIGS solar cell and a method for manufacturing the same, which solve the problem of poor light/heat/humidity stability of the double-segmented CIGS solar cell in the prior art.
The purpose of the invention is mainly realized by the following technical scheme:
the invention provides a double-section CIGS solar cell which comprises a substrate, a first CIGS layer, a transparent insulating layer and a second CIGS layer, wherein the first CIGS layer, the transparent insulating layer and the second CIGS layer are sequentially stacked on the substrate; the first CIGS layer comprises a back electrode layer, a first absorption layer, a buffer layer and a first transparent electrode layer which are sequentially stacked on the substrate, and the second CIGS layer comprises a second transparent electrode layer, a second absorption layer and a third transparent electrode layer which are sequentially stacked on the transparent insulating layer; the first and second absorption layers have different band gap widths.
In one possible design, a first electrode is provided between the first transparent electrode layer and the transparent insulating layer, and a second electrode is provided on the third transparent electrode layer.
In one possible design, the first electrode and the second electrode are the same in shape and size, and the positions of the first electrode and the second electrode correspond.
In one possible design, the second electrode is in contact with the first electrode through an insulating thermally conductive post that penetrates through the transparent insulating layer, the second transparent electrode layer, the second absorbing layer, and the third transparent electrode layer.
In one possible design, the insulating heat-conducting column has an axial direction perpendicular to the substrate.
In one possible design, a plurality of electrically and thermally conductive pillars are disposed in the first transparent electrode layer, and the axial direction of the electrically and thermally conductive pillars is parallel to the plane of the first transparent electrode layer.
In one possible design, the plurality of electrically and thermally conductive columns are arranged divergently about the center of the second electrode.
In one possible design, the first transparent electrode layer, the second transparent electrode layer and the third transparent electrode layer are all a double-layer structure, and the double-layer structure includes a first sub-layer and a second sub-layer.
In one possible design, the first transparent electrode layer, the second transparent electrode layer, and the third transparent electrode layer are all made primarily of IZTO.
In one possible design, the first sublayer includes a continuous first ITO region and a plurality of first IZTO regions in the first ITO region and distributed in a matrix.
In one possible design, the second sublayer includes a continuous second IZTO region and a plurality of second ITO regions in the second IZTO region and distributed in a matrix.
In one possible design, the back electrode layer is doped with Na, and the doping amount of Na in the back electrode layer increases in a gradient manner from the substrate to the first transparent electrode layer.
The invention also provides a preparation method of the double-section CIGS solar cell, which is used for preparing the double-section CIGS solar cell and comprises the following steps: the back electrode layer, the first absorption layer, the buffer layer, the first transparent electrode layer, the second absorption layer and the third transparent electrode layer are sequentially arranged on the substrate.
In one possible design, the preparation method comprises the following steps:
step 1: sequentially forming a back electrode layer, a first absorption layer, a buffer layer and a first transparent electrode layer on a substrate;
step 2: forming an electric conduction heat conduction groove on the first transparent electrode layer by using a composition process, and forming an electric conduction heat conduction column in the electric conduction heat conduction groove;
and step 3: and sequentially forming a second electrode, a transparent insulating layer, a second transparent electrode layer, a second absorption layer, a third transparent electrode layer and a first electrode on the surface of the first transparent electrode layer.
In one possible design, the preparation method comprises the following steps:
step 1': sequentially forming a back electrode layer, a first absorption layer, a buffer layer, a first transparent electrode layer, a second electrode and a transparent insulating layer on a substrate;
step 2': forming a first hole on the transparent insulating layer using a patterning process;
step 3': forming a second transparent electrode layer on the surface of the transparent insulating layer, and forming a second hole on the transparent insulating layer by using a composition process;
step 4': forming a second absorption layer on the surface of the second transparent electrode layer, and forming a third hole on the second absorption layer by using a composition process;
step 5': forming a third transparent electrode layer on the surface of the second absorption layer, forming a fourth hole on the third transparent electrode layer by using a composition process, wherein the first hole, the second hole, the third hole and the fourth hole are communicated to form a through hole for accommodating the insulating heat conduction column;
step 6': and forming an insulating heat conduction column in the through hole, and forming a first electrode on the surface of the third transparent electrode layer.
The invention also provides a packaging structure for packaging the CIGS solar cell, which is characterized in that the packaging structure is rectangular and comprises a protective film, a structural film and a back film which are compacted from top to bottom, and the CIGS solar cell is positioned between the structural film and the back film; the size of the structural film and the CIGS solar cell are the same; the area of the back film is larger than that of the CIGS solar cell; the protective film comprises a main body and edge portions, the main body is the same as the CIGS solar cell in size, the edge portions are arranged on four sides of the main body and are integrated with the main body into a whole, and the edge portions are sealed to tightly cover the side faces of the structural film and the CIGS solar cell and are tightly pressed with the back film.
Compared with the prior art, the invention has the following beneficial effects:
a) the double-section CIGS solar cell comprises a first absorption layer and a second absorption layer which are both made of CIGS, and the light/heat/humidity stability of the CIGS is superior to that of perovskite, so that the overall working stability of the double-section CIGS solar cell can be improved.
b) The double-section CIGS solar cell provided by the invention adopts IZTO to replace a common material ITO, and because the structural compactness of the IZTO is better than that of the ITO and the water vapor barrier property of the IZTO is higher than that of the ITO, the first transparent electrode layer, the second transparent electrode layer and the third transparent electrode layer which are made of the IZTO can better protect the buffer layer, the first absorption layer and the second absorption layer which are sensitive to water vapor, thereby further improving the working stability of the double-section CIGS solar cell.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, wherein like reference numerals are used to designate like parts throughout.
Fig. 1 is a schematic structural diagram of a two-segment CIGS solar cell according to an embodiment of the present invention;
fig. 2 is a schematic view of another structure of a double-segmented CIGS solar cell according to an embodiment of the present invention;
fig. 3 is a schematic view illustrating the distribution of conductive and heat-conductive pillars in a double-segmented CIGS solar cell according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a first sub-layer in a double-segmented CIGS solar cell according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a second sub-layer in a two-segment CIGS solar cell according to an embodiment of the present invention;
fig. 6 is a schematic diagram illustrating the positions of a first sub-layer and a shape memory alloy fiber layer in a two-segment CIGS solar cell according to an embodiment of the present invention;
fig. 7 is a cross-sectional view of a transparent electrode layer in a two-segment CIGS solar cell according to an embodiment of the present invention.
Reference numerals:
1-a substrate; 2-a back electrode layer; 21-a first electrode sublayer; 22-a second electrode sublayer; 23 a third electrode sublayer; 3-a first absorbent layer; 4-a buffer layer; 5-a first transparent electrode layer; 6-a first sublayer; 61-first ITO region; 62-first IZTO zone; 7-a second sublayer; 71-second ITO region; 72-second IZTO region; 8-a layer of shape memory alloy fibers; 9-a transparent insulating layer; 10-a second transparent electrode layer; 11-a second absorbent layer; 12-a third transparent electrode layer; 13-a first electrode; 14-a second electrode; 15-electrically conductive and thermally conductive columns; 16-insulating heat-conducting column.
Detailed Description
The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form a part hereof, and which together with the embodiments of the invention serve to explain the principles of the invention.
Example one
The present embodiment provides a double-segmented CIGS solar cell, referring to fig. 1 to 7, including a substrate 1, and a first CIGS layer, a transparent insulating layer 9, and a second CIGS layer sequentially stacked on the substrate 1, the first CIGS layer including a back electrode layer 2, a first absorber layer 3, a buffer layer 4, and a first transparent electrode layer 5 sequentially stacked on the substrate 1, and the second CIGS layer including a second transparent electrode layer 10, a second absorber layer 11, and a third transparent electrode layer 12 sequentially stacked on the transparent insulating layer 9. Wherein the band gap widths of the first absorption layer 3 and the second absorption layer 11 are different; the first transparent electrode layer 5, the second transparent electrode layer 10, and the third transparent electrode layer 12 are all made of Indium Zinc Tin Oxide (IZTO).
Compared with the prior art, the double-section type CIGS solar cell provided by the embodiment comprises the first absorption layer 3 and the second absorption layer 11 which are both made of CIGS, and the light/heat/humidity stability of CIGS is superior to that of perovskite, so that the overall working stability of the double-section type CIGS solar cell can be improved.
In addition, the double-section CIGS solar cell adopts IZTO to replace a common material ITO, and the structural compactness of the IZTO is superior to that of the ITO, and the water vapor barrier property of the IZTO is higher than that of the ITO, so that the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 which are made of the IZTO can better protect the buffer layer 4, the first absorption layer 3 and the second absorption layer 11 which are sensitive to water vapor, and the working stability of the double-section CIGS solar cell is further improved.
In order to transfer current to the outside, the above-described double segmented CIGS solar cell may further include a first electrode 13 disposed between the first transparent electrode layer 5 and the transparent insulating layer 9 and a second electrode 14 disposed on the third transparent electrode layer 12, that is, the first transparent electrode layer 5 transfers current generated in the first absorption layer 3 to the outside through the first electrode 13, and the third transparent electrode layer 12 transfers current generated in the second absorption layer 11 to the outside through the second electrode 14. Compared with the electrode arrangement mode of the first embodiment, the arrangement mode of the present embodiment can reduce the arrangement of the via holes and the leads, and can reduce the workload of a single electrode.
It should be noted that the arrangement of the electrodes affects the light transmittance of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12, and in order to reduce such an effect, the shape and the size of the first electrode 13 and the second electrode 14 may be the same, and the positions of the first electrode 13 and the second electrode 14 may correspond to each other, so that the light shielding area of the whole of the first electrode 13 and the second electrode 14 may be reduced as much as possible, and the influence of the arrangement of the electrodes on the light transmittance of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 may be reduced.
Considering that the electrode generates resistance heat during operation, and the second electrode 14 is located between the first transparent electrode layer 5 and the transparent insulating layer 9, and the heat dissipation capability of the environment is poor, in order to improve the heat dissipation capability of the second electrode 14, the second electrode 14 may contact the first electrode 13 through an insulating heat conduction column 16 (for example, aluminum nitride, beryllium nitride, aluminum oxide, or silicon nitride) penetrating through the transparent insulating layer 9, the second transparent electrode layer 10, the second absorption layer 11, and the third transparent electrode layer 12, and the heat dissipated from the second electrode 14 is transferred to the first electrode 13 located at an outer layer relatively through the insulating heat conduction column 16, and then dissipated to the environment. It is understood that the insulating heat-conducting post 16 may be perpendicular to the substrate 1 in the axial direction for the sake of manufacturing convenience and saving of insulating heat-dissipating material.
In order to avoid that the heat emitted by the second electrode 14 affects the first electrode 13, a plurality of electrically conductive and thermally conductive pillars 15 may be provided in the first transparent electrode layer 5, with their axial directions parallel to the plane of the first transparent electrode layer 5 and arranged divergently with the center of the second electrode 14. Thus, the heat emitted from the second electrode 14 can be dissipated to the environment through the conductive and heat-conducting pillars 15, and meanwhile, since the plurality of conductive and heat-conducting pillars 15 are arranged in a manner of being dispersed in the center of the second electrode 14, the distribution density of the conductive and heat-conducting pillars 15 in the second electrode 14 part inside is high, and the heat dissipation capability of the inner space can be improved.
Considering that the light transmittance of the IZTO is lower than that of ITO, in order to reduce the influence of the IZTO on the light transmittance of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12, each of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 may have a double-layer structure including a first sub-layer 6 and a second sub-layer 7, one of which includes the IZTO and the other of which includes ITO, that is, each of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 includes both the IZTO and the ITO, so that the water vapor barrier property and the light transmittance of the ITO are both good, and the water vapor barrier property can be improved without affecting the uniformity of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12. It should be noted that, regarding the relative positions of the first sublayer 6 and the second sublayer 7, the first sublayer 6 may be close to the buffer layer 4 or the second sublayer 7 may be close to the buffer layer 4, and may be adjusted according to actual situations.
As for the structure of the first sub-layer 6, specifically, it may include a continuous first ITO region 61 and a plurality of first IZTO regions 62 located in the first ITO region 61 and distributed in a matrix, and similarly, the second sub-layer 7 may include a continuous second IZTO region 72 and a plurality of second ITO regions 71 located in the second IZTO region 72 and distributed in a matrix, so that, from the viewpoint of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 all having an IZTO structure and an ITO structure at the same time, the structure is relatively uniform, thereby being capable of achieving an improvement in moisture barrier property without affecting the light transmission of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12.
In order to further improve the light transmittance and the water vapor barrier property of the two-segment CIGS solar cell, the projections of the first ITO region 61 and the second ITO region 71 on the solar cell substrate 1 are continuous planes, and the projections of the first IZTO region 62 and the second IZTO region 72 on the solar cell substrate 1 are continuous planes. That is, the shape and size of the first ITO region 61 are the same as those of the second IZTO region 72, and the positions of the first IZTO region 62 are the same as those of the second ITO region 71, so that the first IZTO region 62 and the second IZTO region 72 can form a complete film structure with good water vapor barrier property, thereby further improving the light transmittance and water vapor barrier property of the double-segment CIGS solar cell.
In order to improve the uniformity of the entire first transparent electrode layer 5, the second transparent electrode layer 10, and the third transparent electrode layer 12, the ratio of the area of the first ITO region 61 to the total area of the plurality of first IZTO regions 62 may be controlled to be 1.2 to 1.5, and the ratio of the area of the second IZTO region 72 to the total area of the plurality of second ITO regions 71 may be controlled to be 1.2 to 1.5.
Considering that the size and distribution density of the first IZTO area 62 and the second ITO area 71 also affect the overall uniformity of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12, when the first IZTO area 62 and the second ITO area 71 are square, the ratio of the gap between two adjacent first IZTO areas 62 to the side length of the first IZTO area 62 can be controlled to be 0.4-0.6, and similarly, the ratio of the gap between two adjacent second ITO areas 71 to the side length of the second ITO area 71 can be controlled to be 0.4-0.6.
Considering that the CIGS solar cell needs to be exposed to the external environment for a long time and is sensitive in structure, especially for the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12, which are all located on the surface of the CIGS solar cell and are exposed to sunlight for a long time, deformation is easily generated under the condition of high temperature or external impact, so that the overall working stability of the CIGS solar cell is affected, and therefore, the shape memory alloy fiber layer 8 may be disposed between the first sublayer 6 and the second sublayer 7. The shape memory alloy fiber has the functions of self-diagnosis, self-adaptation, self-repair and the like. When the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 are deformed at a high temperature or under external impact, the shape memory alloy fibers can promote the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 to be restored to the original state before deformation, so that the deformation amount of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 is reduced, the overall working stability of the CIGS solar cell is improved, and the service life of the CIGS solar cell is prolonged.
In order to reduce the influence of the addition of the shape memory alloy fiber layer 8 on the light transmittance, the shape may be a mesh shape. In this way, sunlight can enter the CIGS solar cell through the shape memory alloy fiber layer 8, and only the mesh line portions affect the sunlight, so that the effect of the addition of the shape memory alloy fiber layer 8 on the light transmittance can be minimized.
Illustratively, the grid lines of the grid-like shape memory alloy fiber layer 8 may coincide with connecting lines of the first ITO region 61, the second ITO region 71, the first IZTO region 62, and the second IZTO region 72. This is because, since the connecting lines of the first ITO region 61, the second ITO region 71, the first IZTO region 62, and the second IZTO region 72 are the junctions of the four regions, the light transmittance is relatively poor here in consideration of the influence of the processing process and the material, the grid lines overlap with the connecting lines, and the addition of the grid-shaped shape memory alloy fiber layer 8 affects only the light transmittance of the connecting line portion having relatively poor light transmittance, and does not affect other portions of the first transparent electrode layer 5, the second transparent electrode layer 10, and the third transparent electrode layer 12, so that the influence of the addition of the shape memory alloy fiber layer 8 on the light transmittance can be further reduced.
Considering that the resistance heating phenomenon exists in the actual working process of the electrodes of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12, the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 can be doped with nano silver (Ag) particles, because the thermal conductivity of Ag is better than that of ITO and IZTO, and the doping of Ag in the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 can improve the overall thermal conductivity of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12, so that the heat generated by the electrodes can be diffused into the environment more quickly, and the damage of the electrodes due to resistance heating is reduced. Meanwhile, it is worth noting that the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12 all have high requirements on light transmittance, in order to reduce the influence of Ag doping on the light transmittance of the first transparent electrode layer 5, the second transparent electrode layer 10 and the third transparent electrode layer 12, Ag nanoparticles can be adopted for doping, and the light absorption of the nano-sized Ag particles is small.
In order to further improve the photoelectric properties and stability of each of the first transparent electrode layer 5, the second transparent electrode layer 10, and the third transparent electrode layer 12, zirconium (Zr) may be doped therein.
For the back electrode layer 2, the metal Na may be doped therein, and the doping amount of Na in the back electrode layer 2 increases in a gradient manner from the substrate 1 to the first transparent electrode layer 5, that is, the back electrode layer 2 may have at least two layers, and of the two adjacent electrode sublayers, the doping amount of Na in the electrode sublayer near the first transparent electrode layer 5 is higher than that in the electrode sublayer far from the first transparent electrode layer 5. Specifically, the Na doping amount in the multilayer electrode sublayers can be increased in a gradient manner in an equal difference and equal ratio manner. In practical applications, although the back electrode layer 2 has a small thickness, when the doping amount gradient of Na in the back electrode layer 2 increases, Na atoms are not uniformly distributed in the back electrode layer 2 even after the storage for a long time. In this way, since Na is doped in the back electrode layer (Mo), and both Na and Mo belong to metals, and the compatibility between both Na and Mo is good, Na doping can be achieved without substantially affecting the uniformity of the back electrode layer 2, and Na can diffuse from the back electrode layer 2 to the first absorption layer 3, thereby improving the energy conversion efficiency of the solar cell. In addition, since pure metal sodium is doped in the back electrode layer 2 of the CIGS solar cell, no new impurity element is introduced in the doping process, thereby ensuring the performance of the CIGS solar cell. Meanwhile, because the doping amount of Na in the back electrode layer 2 increases in a gradient manner from the substrate 1 to the first transparent electrode layer 5, under the condition that the total Na doping amount is not changed, compared with the back electrode layer 2 with the same Na doping amount, in the CIGS solar cell doped with metal Na provided by the embodiment, the Na doping amount in the electrode sublayer close to the first absorption layer 3 is larger, so that the Na concentration difference between the electrode sublayer and the first absorption layer 3 is increased, and further, the infiltration amount and the infiltration depth of Na into the first absorption layer 3 can be increased, and the utilization rate of Na can be increased; in addition, since the Na doping amount in the electrode sublayer near the substrate 1 is small, the amount and depth of Na penetration into the substrate 1 can be reduced.
In general, the bonding tightness between the back electrode layer 2 and the substrate 1 is affected to a certain extent by doping Na, the doping amount of Na in the back electrode layer 2 increases in a gradient manner from the substrate 1 to the first transparent electrode layer 5, the doping amount of Na in the electrode sublayer close to the substrate 1 is small, the lattice matching between the substrate 1 and the electrode sublayer can be improved, the physicochemical stress between the substrate 1 and the electrode sublayer can be reduced, and the influence of Na doping on the bonding tightness between the substrate 1 and the electrode sublayer can be reduced as much as possible.
Illustratively, the back electrode layer 2 may have a three-layer structure, and the back electrode layer 2 sequentially includes a first electrode sub-layer 21, a second electrode sub-layer 22, and a third electrode sub-layer 23 from the first transparent electrode layer 5 to the substrate 1, where the Na doping amount of the first electrode sub-layer 21 > the Na doping amount of the second electrode sub-layer 22 > the Na doping amount of the third electrode sub-layer 23.
In order to further improve the infiltration amount and the infiltration depth of Na penetrating into the first absorption layer 3 and reduce the infiltration amount and the infiltration depth of Na penetrating into the substrate 1, the thickness ratio of the first electrode sublayer 21, the second electrode sublayer 22 and the third electrode sublayer 23 can be controlled within the range of 2-2.5: 1-1.2: 2-2.5, that is, the thicknesses of the first electrode sublayer 21 and the third electrode sublayer 23 are greater than the thickness of the second electrode sublayer 22. This is because the Na doping amount and thickness of the first electrode sublayer 21 are large, and sufficient Na atoms can be provided to penetrate into the first absorption layer 3, and the thickness of the third electrode sublayer 23 is large, so that the first electrode sublayer 21 with a large Na doping amount is as far as possible from the substrate 1, and Na in the first electrode sublayer 21 does not substantially penetrate into the substrate 1; meanwhile, due to the difference between the arrangement of the second electrode sublayer 22 and the Na doping amount, the back electrode layer 2 is made of three different types of materials, so as to form an interface between the two different types of materials, and the interface can have a certain barrier effect on the diffusion of Na and other impurity elements due to the difference of diffusion behaviors, so that the infiltration amount and the infiltration depth of Na infiltrating into the first absorption layer 3 are further increased, and the infiltration amount and the infiltration depth of Na infiltrating into the substrate 1 are reduced.
In order to reduce the reflectivity of incident light, the upper surface of the transparent surface electrode layer 5 is provided with an optical film coating, and the optical film coating sequentially comprises a first indium tin oxide layer, a nano silicon dioxide layer, a nano titanium dioxide layer and a second indium tin oxide layer from top to bottom; optical thin film coatings are used to reduce the reflection of incident light, increasing the optical path of the incident light within the CIGS solar thin film cell.
Specifically, be equipped with the optical film coating on transparent surface electrode layer 5, this optical film coating includes first indium tin oxide layer from top to bottom in proper order, the nanometer silica layer, nanometer titanium dioxide layer and second indium tin oxide layer, the porosity can be adjusted according to the angle of inclination incidence of optical film coating to the reflection system of this optical film coating, and then adjust the light reflectivity of optical film coating, through adjusting the light reflectivity of this optical film coating, the reflection condition of the incident light that can greatly reduced, reduce the reflection loss of incident light, increase the short-circuit current and the quantum efficiency of battery.
In order to prevent the incident light which is not absorbed after passing through the CIGS layer 3 from being transmitted out through the back electrode layer 2, a first light trapping structure is arranged between the flexible substrate 1 and the back electrode layer 2, and the interface between the first light trapping structure and the back electrode layer 2 is a corrugated Ag thin film; the first light trapping structure is used for increasing the optical path of incident light in the CIGS solar thin film cell. The first light trapping structure is arranged between the flexible substrate 1 and the back electrode layer 2, light transmitted through the CIGS layer 3 can be blocked, the part of transmitted light can be reflected into the CIGS layer 3 by the corrugated Ag thin film, the part of transmitted light reflected by the first light trapping structure enters the CIGS layer 3 above the back electrode layer 2 again, the optical path of incident light in the CIGS solar thin film battery is increased, and the incident light is fully absorbed, so that the incident light absorption performance is improved, and the current and the quantum efficiency of the battery are increased.
In addition, can also directly prepare the second light trapping structure on transparent surface electrode layer 5, this second light trapping structure is including evenly laying the micro-nano layer structure on transparent surface electrode layer 5, this micro-nano layer structure comprises the little nanometer ball that the particle diameter is even, plate one deck aluminium-doped zinc oxide conductive film at the upper surface of micro-nano layer structure, get rid of little nanometer ball through ultrasonic cleaning, form second light trapping structure, the incident light enters into CIGS layer 3 of below after the second light trapping structure scattering.
Example two
The embodiment provides a preparation method of a double-section CIGS solar cell, which comprises the following steps: the back electrode layer, the first absorption layer, the buffer layer, the first transparent electrode layer, the second absorption layer and the third transparent electrode layer are sequentially arranged on the substrate.
Compared with the prior art, the beneficial effects of the method for preparing a double-section CIGS solar cell provided by the embodiment are basically the same as those of the double-section CIGS solar cell provided by the embodiment, and detailed description is omitted here.
Specifically, the preparation method comprises the following steps:
step 1: sequentially forming a back electrode layer, a first absorption layer, a buffer layer and a first transparent electrode layer on a substrate;
step 2: forming an electrically conductive heat conduction groove on the first transparent electrode layer by using a patterning process (e.g., etching), and forming an electrically conductive heat conduction column in the electrically conductive heat conduction groove;
and step 3: and sequentially forming a second electrode, a transparent insulating layer, a second transparent electrode layer, a second absorption layer, a third transparent electrode layer and a first electrode on the surface of the first transparent electrode layer.
Alternatively, the above preparation method may also comprise the steps of:
step 1': sequentially forming a back electrode layer, a first absorption layer, a buffer layer, a first transparent electrode layer, a second electrode and a transparent insulating layer on a substrate;
step 2': forming a first hole on the transparent insulating layer using a patterning process (e.g., etching);
step 3': forming a second transparent electrode layer on the surface of the transparent insulating layer, and forming a second hole on the transparent insulating layer by using a patterning process (e.g., etching);
step 4': forming a second absorption layer on the surface of the second transparent electrode layer, and forming a third hole on the second absorption layer by using a patterning process (e.g., etching);
step 5': forming a third transparent electrode layer on the surface of the second absorption layer, and forming a fourth hole on the third transparent electrode layer by using a patterning process (for example, etching), wherein the first hole, the second hole, the third hole and the fourth hole are communicated to form a through hole for accommodating the insulating heat conduction column;
step 6': and forming an insulating heat conduction column in the through hole, and forming a first electrode on the surface of the third transparent electrode layer.
In the above preparation method, the first transparent electrode layer, the second transparent electrode layer and the third transparent electrode layer are all prepared by the following method: forming an ITO layer by adopting a sputtering process, forming a plurality of IZTO accommodating grooves distributed in a matrix form on the ITO layer by adopting an etching process, forming a first IZTO area in the plurality of IZTO accommodating grooves by adopting the sputtering process, and obtaining a first sub-layer by taking the non-etched part of the ITO layer as the first ITO area; and forming an IZTO layer on the surface of the first sublayer by adopting a sputtering process, forming a plurality of ITO (indium tin oxide) accommodating grooves distributed in a matrix manner on the IZTO layer by adopting an etching process, forming second ITO areas in the plurality of ITO accommodating grooves by adopting the sputtering process, wherein the un-etched part of the IZTO layer is the second IZTO area to obtain a second sublayer.
When the shape memory alloy fiber layer is arranged between the first sublayer and the second sublayer, the first transparent electrode layer, the second transparent electrode layer and the third transparent electrode layer are all prepared by the following method:
step a: laying shape memory alloy fibers on the surface of the first sublayer;
step b: carrying out hot pressing on the shape memory alloy fibers to enable part of the shape memory alloy fibers to be embedded into the first sublayer, so as to obtain a shape memory alloy fiber layer;
step c: and forming a second sublayer on the first sublayer and the surface of the shape memory alloy fiber layer.
The shape memory alloy fiber, the first sublayer and the second sublayer can be tightly combined by adopting a hot pressing process, so that the phenomenon that the overall performance of the CIGS solar cell is influenced due to the fact that gaps are formed between the shape memory alloy fiber and the first sublayer and between the shape memory alloy fiber and the second sublayer is avoided.
In order to make the bonding of the shape memory alloy fiber to the first and second sub-layers tighter, the shape memory alloy fiber may be further subjected to a pretreatment comprising the steps of: and sequentially grinding and polishing the surface of the shape memory alloy fiber, carrying out acid etching for 20-30 s, cleaning and drying. The shape memory alloy fiber is polished, so that an oxide layer on the surface of the shape memory alloy fiber can be removed, and the next step of acid etching is more sufficient. The acid etching process is a process of substantially increasing the surface area of the shape memory alloy fiber, and the acid etched shape memory alloy fiber is fully contacted in the subsequent hot pressing process, so that the first sublayer, the second sublayer and the shape memory alloy fiber are combined more tightly.
For the hot pressing process, the hot pressing temperature, the hot pressing pressure and the hot pressing time are important process conditions for fully stretching the shape memory alloy fibers, the hot pressing temperature is preferably 800-900 ℃, the hot pressing pressure is preferably 100-120 MPa, and the hot pressing time is preferably 3-4 h.
EXAMPLE III
The embodiment provides a packaging structure of a thin-film solar cell, which is rectangular and comprises a protective film, a structural film and a back film which are compacted from top to bottom, wherein the CIGS solar cell is positioned between the structural film and the back film; in general, a CIGS solar cell is generally formed in a rectangular shape for convenience of processing, and a CIGS solar cell is a core object of a package, so that the package structure is rectangular. The size of the structural film and the CIGS solar cell are the same; the area of the back film is larger than that of the CIGS solar cell; the protective film comprises a main body and edge portions, the main body is the same as the CIGS solar cell in size, the edge portions are arranged on four sides of the main body and are integrated with the main body into a whole, and the edge portions are sealed to tightly cover the side faces of the structural film and the CIGS solar cell and are tightly pressed with the back film. In the packaging structure, a main body of the protective film, a structural film and the CIGS solar cell are used as the core of the main laminated packaging, and the sizes of the main laminated packaging and the structural film are required to be equal; the edge of the protective film is used for packaging the side edge, so that the width of the edge is equal to that of the corresponding side edge, the length of the edge is greater than the thickness of the solar thin film cell, and the excess part is used for being bonded with the back film to realize the fixation of the edge and the internal packaging.
The packaging structure of the embodiment of the invention is equivalent to packaging the main illumination surface and the side surface of the solar thin film battery by using the protective film at the same time, and does not need to use special side packaging materials, thereby simplifying the packaging structure of the solar thin film battery.
In order to ensure that the solar thin-film battery obtains the photoelectric conversion efficiency as large as possible on the premise of ensuring the water-blocking function of the packaging structure, in the embodiment of the invention, the protective film is an ETFE film; the structural film is an EEA film; the back film is a double-layer film, one layer in contact with the CIGS is a DNP film, and the other layer is a PET film.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (12)
1. A double-section CIGS solar cell is characterized by comprising a substrate, a first CIGS layer, a transparent insulating layer and a second CIGS layer, wherein the first CIGS layer, the transparent insulating layer and the second CIGS layer are sequentially stacked on the substrate;
the first CIGS layer comprises a back electrode layer, a first absorption layer, a buffer layer and a first transparent electrode layer which are sequentially stacked on the substrate, and the second CIGS layer comprises a second transparent electrode layer, a second absorption layer and a third transparent electrode layer which are sequentially stacked on the transparent insulating layer;
the first absorption layer and the second absorption layer have different band gap widths;
the first transparent electrode layer, the second transparent electrode layer and the third transparent electrode layer are all of a double-layer structure, and the double-layer structure comprises a first sub-layer and a second sub-layer;
the first transparent electrode layer, the second transparent electrode layer and the third transparent electrode layer are mainly made of IZTO;
the first sublayer comprises a continuous first ITO (indium tin oxide) area and a plurality of first IZTO areas which are positioned in the first ITO area and distributed in a matrix manner; the second sublayer comprises a continuous second IZTO area and a plurality of second ITO areas which are positioned in the second IZTO area and distributed in a matrix manner; the projections of the first ITO area and the second ITO area on the solar cell substrate are continuous planes, and the projections of the first IZTO area and the second IZTO area on the solar cell substrate are continuous planes;
a shape memory alloy fiber layer is arranged between the first sublayer and the second sublayer; the shape of the shape memory alloy fiber layer is in a grid shape; the grid lines of the grid-shaped shape memory alloy fiber layer are superposed with the connecting lines of the first ITO area, the second ITO area, the first IZTO area and the second IZTO area;
the substrate is a flexible substrate, a first light trapping structure is arranged between the flexible substrate and the back electrode layer, and a corrugated Ag film is arranged at the interface of the first light trapping structure and the back electrode layer;
directly prepare second light trapping structure on first transparent electrode layer, second light trapping structure is including evenly laying the micron layer structure of receiving on first transparent electrode layer a little, the micron layer structure of receiving comprises the little nanometer ball that the particle diameter is even, plates one deck aluminium-doped zinc oxide conductive film at the upper surface of the micron layer structure of receiving a little, removes little nanometer ball through ultrasonic cleaning, forms second light trapping structure, and the incident light enters into the CIGS layer of below after the second light trapping structure scattering.
2. The two-segment CIGS solar cell as recited in claim 1 further comprising a first electrode disposed between the first transparent electrode layer and the transparent insulating layer and a second electrode disposed on the third transparent electrode layer.
3. The two-segment CIGS solar cell as claimed in claim 2, wherein the first and second electrodes are identical in shape and size, and are positioned correspondingly.
4. The two-segment CIGS solar cell as recited in claim 3 wherein the second electrode is in contact with the first electrode through an insulating thermally conductive post extending through the transparent insulating layer, the second transparent electrode layer, the second absorber layer and the third transparent electrode layer.
5. The two-segment CIGS solar cell as recited in claim 4 wherein the insulating thermally conductive pillars have an axis that is perpendicular to the substrate.
6. The two-segment CIGS solar cell as claimed in claim 3, wherein the first transparent electrode layer has a plurality of electrically and thermally conductive pillars disposed therein, the electrically and thermally conductive pillars having an axial direction parallel to the plane of the first transparent electrode layer.
7. The dual-segment CIGS solar cell as recited in claim 6, wherein the plurality of electrically conductive and thermally conductive pillars are arranged divergently about the center of the second electrode.
8. The two-segment CIGS solar cell as claimed in any one of claims 1 to 7, wherein the back electrode layer is doped with Na, and the amount of Na doped in the back electrode layer increases in a gradient manner from the substrate to the first transparent electrode layer.
9. A method for manufacturing a two-segment CIGS solar cell according to any one of claims 1 to 8, comprising the steps of: the back electrode layer, the first absorption layer, the buffer layer, the first transparent electrode layer, the second absorption layer and the third transparent electrode layer are sequentially arranged on the substrate.
10. The method of manufacturing a two-segment CIGS solar cell as claimed in claim 9, wherein the method comprises the steps of:
step 1: sequentially forming a back electrode layer, a first absorption layer, a buffer layer and a first transparent electrode layer on a substrate;
step 2: forming an electric conduction heat conduction groove on the first transparent electrode layer by using a composition process, and forming an electric conduction heat conduction column in the electric conduction heat conduction groove;
and step 3: and sequentially forming a second electrode, a transparent insulating layer, a second transparent electrode layer, a second absorption layer, a third transparent electrode layer and a first electrode on the surface of the first transparent electrode layer.
11. The method of manufacturing a two-segment CIGS solar cell as claimed in claim 9, wherein the method comprises the steps of:
step 1': sequentially forming a back electrode layer, a first absorption layer, a buffer layer, a first transparent electrode layer, a second electrode and a transparent insulating layer on a substrate;
step 2': forming a first hole on the transparent insulating layer using a patterning process;
step 3': forming a second transparent electrode layer on the surface of the transparent insulating layer, and forming a second hole on the transparent insulating layer by using a composition process;
step 4': forming a second absorption layer on the surface of the second transparent electrode layer, and forming a third hole on the second absorption layer by using a composition process;
step 5': forming a third transparent electrode layer on the surface of the second absorption layer, forming a fourth hole on the third transparent electrode layer by using a composition process, wherein the first hole, the second hole, the third hole and the fourth hole are communicated to form a through hole for accommodating the insulating heat conduction column;
step 6': and forming an insulating heat conduction column in the through hole, and forming a first electrode on the surface of the third transparent electrode layer.
12. An encapsulation structure for encapsulating the double-segmented CIGS solar cell as claimed in any one of claims 1 to 8, wherein the encapsulation structure is rectangular and comprises a protective film, a structural film and a back film which are compressed from top to bottom, and the double-segmented CIGS solar cell is positioned between the structural film and the back film;
the structural film and the double-section CIGS solar cell are the same in size;
the area of the back film is larger than that of the double-section CIGS solar cell;
the protective film comprises a main body and edges, the size of the main body is the same as that of the double-section CIGS solar cell, the edges are arranged on four sides of the main body and are integrated with the main body into a whole, and the edges tightly cover the side faces of the structural film and the double-section CIGS solar cell in a sealing mode and are tightly pressed with the back film.
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