CN105632903A - Sodium-potassium co-doping technology for preparing high-efficiency copper indium gallium selenide solar cell - Google Patents
Sodium-potassium co-doping technology for preparing high-efficiency copper indium gallium selenide solar cell Download PDFInfo
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- 238000005516 engineering process Methods 0.000 title claims abstract description 17
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 title abstract description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title abstract 3
- 229910001414 potassium ion Inorganic materials 0.000 claims abstract description 49
- 229910001415 sodium ion Inorganic materials 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 claims description 45
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 12
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 12
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 230000009466 transformation Effects 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 6
- VZZSRKCQPCSMRS-UHFFFAOYSA-N dipotassium;selenium(2-) Chemical compound [K+].[K+].[Se-2] VZZSRKCQPCSMRS-UHFFFAOYSA-N 0.000 claims description 6
- FANSKVBLGRZAQA-UHFFFAOYSA-M dipotassium;sulfanide Chemical compound [SH-].[K+].[K+] FANSKVBLGRZAQA-UHFFFAOYSA-M 0.000 claims description 6
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims description 6
- 235000003270 potassium fluoride Nutrition 0.000 claims description 6
- 239000011698 potassium fluoride Substances 0.000 claims description 6
- 235000013024 sodium fluoride Nutrition 0.000 claims description 6
- 239000011775 sodium fluoride Substances 0.000 claims description 6
- VPQBLCVGUWPDHV-UHFFFAOYSA-N sodium selenide Chemical compound [Na+].[Na+].[Se-2] VPQBLCVGUWPDHV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052979 sodium sulfide Inorganic materials 0.000 claims description 6
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims description 6
- 239000006096 absorbing agent Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- -1 potassium ion compound Chemical class 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000003345 natural gas Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a sodium-potassium co-doping technology for preparing a high-efficiency copper indium gallium selenide solar cell. The copper indium gallium selenide (CIGS for short) thin film solar cell becomes a solar cell technique with the most development potential due to various advantages. During the preparation process of the CIGS solar cell, the photoelectric conversion efficiency of the cell can be improved by doping of alkali metal ions. The patent proposes a novel technology, sodium ions and potassium ions are co-doped in a CIGS absorption layer, and thus, the photoelectric conversion efficiency of the CIGS solar cell is further improved. The patent also proposes four technical schemes to achieve co-doping of the sodium ions and the potassium ions, and the four technical schemes are suitable for different CIGS absorption layer deposition technologies.
Description
Technical field
The invention belongs to area of solar cell, relate to a kind of CIGS (being called for short CIGS) thin-film solar cells device.
Background technology
All energy both are from the energy, and the life of the mankind be unable to do without the energy. After entering 21 century, the developable energy resources of the current technology of the mankind will face the crisis of wretched insufficiency, and particularly the current fossil fuels resource such as coal, oil and natural gas is day by day exhausted, even can only maintain decades. Therefore, it is necessary to find continuable replacement new forms of energy. It addition, the fossil fuels such as coal, oil and natural gas is in use, a series of environmental problem also can be brought: global greenhouse effect makes Global Temperature raise, and sea level rise; Air pollution; Arid, desertification; Waste gas, refuse, waste liquid discharge in a large number, cause the severe contamination of human environment.
So the renewable new forms of energy finding cleaning become the task that current mankind is very urgent. In existing renewable new forms of energy, solar energy becomes the cleaning new energy paid close attention to by people. Solar energy has lot of advantages, and it is available anywhere, enormous amount; Inexhaustible; Not only cleaned but also safety, pollution-free, again without influence on ecological environment. So, developing solar energy becomes the strategic decision of countries in the world development cleaning new energy.
In existing solar battery technology, it is strong that thin-film solar cells that CIGS (is called for short CIGS) has light absorpting ability, good stability, anti-radiation performance are good, efficiency is high, cost is low, flexible unit can be made, most suitable as advantages such as BIPV (BIPV) uses, receive people to pay close attention to, be a kind of solar battery technology having very much development potentiality.
But compare traditional thermal power generating technology, the cost of electricity-generating of existing solaode is still low not, so needing vigorously supporting of government to develop further, in order to reduce the cost of electricity-generating of solaode further, an effective method is just to provide the photoelectric transformation efficiency of solaode. It is known that in order to obtain efficient CIGS thin film solaode, the doping of sodium metal ion is necessary. Sodium metal ion enters into CIGS absorbed layer, it is possible to passivation CIGS crystal boundary, promotes the growth of CIGS crystal grain, thus significantly improving the photoelectric transformation efficiency of battery. In the present invention, it is proposed that sodium ion and potassium ion are doped to the technology in CIGS absorbed layer simultaneously, it is possible to improve the photoelectric transformation efficiency of CIGS solaode further. Meanwhile, we also proposed several sodium ion and potassium ion is doped to the way in CIGS absorbed layer simultaneously.
Summary of the invention
It is an object of the invention to propose the new technique in sodium ion and potassium ion co-doped to CIGS absorbed layer, to improve the photoelectric transformation efficiency of CIGS solaode. In order to technical scheme is better illustrated, conventional CIGS solar cell device structure used herein is illustratively (as shown in Figure 1). Device architecture includes:
Substrate (001), substrate can be glass, it is also possible to be flexible substrate such as rustless steel or polyimides PI plastics, for support CIGS device. Need before use to be carried out processing.
Metal back electrode (002), general common metal molybdenum (Mo), as back electrode, is deposited in glass substrate (001) by the way of sputtering, it is possible to derive hole as positive pole.
Absorbed layer (003), CIGS absorbed layer is generally deposited on back electrode, is used for absorbing incident sunlight. CIGS absorbed layer can adopt the deposition techniques such as sputtering and selenization technique, polynary steaming altogether, plating, solwution method, and the main feature of the present invention is exactly co-doped sodium ion and potassium ion in CIGS absorbed layer, it is possible to improve the photoelectric transformation efficiency of CIGS solaode.
Cushion (004), general chemical bath method is prepared cadmium sulfide (CdS) and is deposited on absorbed layer (003) as cushion (004), it both can form pn-junction with the cigs layer of p-type, having can as the transition zone of cigs layer Yu ZnO layer, it is possible to buffer lattice mismatch and Band offset. In the present invention, we introduce ultrasonic in the process of chemical bath method deposition cadmium sulfide, to improve the performance of solar cell device.
Transparency electrode TCO (005), conventional high resistant zinc oxide (IZO) and Al-Doped ZnO (AZO) are produced on cushion (004) as transparency electrode (005), both sunlight can have been passed through, transmission electronics can be collected again, as the negative pole of solaode.
Metal gates (006), conventional nickel aluminum (Ni/Al) electrode deposition is on AZO layer, it is possible to more effective collection electronics is also derived electronics. In actual applications, large-area CIGS battery component product does not need metal gates (006), but carry out in series or in parallel inside battery component by the way of laser grooving and scribing, assembly surface can't see metal electrode, it is elegant in appearance that crystal silicon component compared by such assembly, is more suitable for BIPV.
In order to effectively realize the co-doped of sodium ion and potassium ion to CIGS absorbed layer, the present invention proposes several specifically how to realize sodium ion and the way of potassium ion co-doped, thus to improve the performance of solar cell device.
Accompanying drawing explanation
For further illustrating present disclosure and feature, below in conjunction with accompanying drawing, the present invention is explained in detail, and provides specific embodiment card. Wherein Fig. 1 is the structural representation of CIGS thin film solaode.
Detailed description of the invention
Described above is only the general introduction of technical solution of the present invention, for making the purpose of the present invention, technical scheme and advantage clearly understand, is specifically described as follows below in conjunction with specific embodiment card:
In order to realize in CIGS absorbed layer, the co-doped of sodium ion and potassium ion, we propose four kinds of technical schemes in the present invention:
One, sodium contaminated ion and potassium ion in metal back electrode Mo layer (002).
Metal back electrode molybdenum layer (002) obtains generally by the target of splash-proofing sputtering metal molybdenum (Mo), in order to realize sodium ion and the potassium ion co-doped in CIGS absorbed layer, compound doped in Mo target containing sodium ion and potassium ion, this compound can adopt sodium molybdate and potassium molybdate, can also adopting the compound of other sodium and potassium, doping ratio is from 0.5% to 20%. In the sputter deposition process of back electrode Mo, sodium ion and potassium ion are also deposited in metal back electrode Mo layer, and in the preparation process of CIGS absorbed layer, under high temperature action, sodium ion and potassium ion can be diffused in CIGS absorbed layer, thus realizing sodium ion and the potassium ion co-doped in CIGS absorbed layer. Adjust the content of sodium ion and potassium ion compound in Mo target, it is possible to adjust the doping content of sodium ion and potassium ion in CIGS absorbed layer. This concentration is generally 0.01% to 1%.
Two, sodium contaminated ion and potassium ion in the Co-evaporated Deposition process of CIGS absorbed layer.
If the technology adopting coevaporation carrys out depositing CIGS absorber layer, it is possible to come sodium contaminated ion and potassium ion by the way steamed altogether. While copper, indium, gallium, four kinds of element coevaporations of selenium, the compound of hydatogenesis sodium ion and potassium ion, for instance sodium fluoride and potassium fluoride, or sodium sulfide and Potassium monosulfide., sodium selenide and potassium selenide etc. Adjust temperature and the speed of evaporation, it is possible to adjust the doping content of sodium ion and potassium ion in CIGS absorbed layer. This concentration is generally 0.01% to 1%.
Three, with the method sodium contaminated ion of post processing and potassium ion after CIGS absorbed layer has deposited.
After CIGS absorbed layer has deposited, with the compound (5-100nm) of way one layer of sodium ion of deposition of thermal evaporation and potassium ion on CIGS absorbed layer, such as sodium fluoride and potassium fluoride, or sodium sulfide and Potassium monosulfide., sodium selenide and potassium selenide etc., then the high temperature anneal, annealing temperature 200 600 degrees Celsius, it is possible to realize the co-doped of sodium ion and potassium ion are carried out. Adjust the deposit thickness (5-100nm) of the compound of sodium ion and potassium ion and annealing temperature, it is possible to achieve the optimum co-doped concentration (being generally 0.01% to 1%) of sodium ion and potassium ion.
The scope of application of the technical program is the widest, no matter how to carry out depositing CIGS absorber layer, for instance sputtering and selenization technique, polynary steaming altogether, plating, solwution method etc., can deposit at absorbed layer and adopt the technical program to realize the co-doped of sodium ion and potassium ion afterwards.
Four, for solwution method depositing CIGS absorber layer technology, sodium contaminated ion and potassium ion in precursor solution.
Solwution method deposition CIGS has self advantage a lot, for instance speed of production is fast, and stock utilization is high, and each elemental constituent is easier to control, and is also easier to realize the co-doped of sodium ion and potassium ion. When the precursor solution of preparation CIGS, it is possible to add the compound of sodium ion and potassium ion in the solution, for instance sodium fluoride and potassium fluoride, or sodium sulfide and Potassium monosulfide., sodium selenide and potassium selenide etc., doping content is generally 0.01% to 3%, is then uniformly mixed. Then according to the solwution method technology of standard prepares CIGS absorbed layer, so while completing CIGS absorbed layer, also complete the co-doped of sodium ion and potassium ion.
Above-described specifically execute example, the purpose of the present invention, technical scheme and positive effect have been further described, it is it should be understood that, the foregoing is only specific embodiments of the invention card, it is not limited to the present invention, for one of ordinary skill in the art, according to the thought of the embodiment of the present invention, being likely to modify in specific embodiments and applications, the content of this specification should not be construed as limitation of the present invention. All do within the principle of the present invention any repair and improvement etc., should be included within protection scope of the present invention. Further, above four kinds of technical schemes, it is possible to select two kinds or more simultaneously, use together, reach the optimization concentration of sodium ion and potassium ion co-doped, improve the photoelectric transformation efficiency of CIGS solaode.
Claims (6)
1. this patent proposes a kind of technology of co-doped sodium ion and potassium ion in the CIGS absorbed layer of CIGS (CIGS) solaode, it is possible to improve the photoelectric transformation efficiency of copper-indium-galliun-selenium film solar cell. This patent also proposed four kinds of technical schemes to realize the co-doped of sodium ion and potassium ion, is suitable for different CIGS absorbed layer deposition techniques.
2. according to claim 1 when preparing copper indium gallium selenium solar cell, it is characterised in that in CIGS absorbed layer, co-doped sodium ion and potassium ion, to improve the photoelectric transformation efficiency of CIGS solaode.
3. according to claim 1 when preparing copper indium gallium selenium solar cell, sodium contaminated ion and potassium ion in metal back electrode Mo layer, in the preparation process of CIGS absorbed layer, sodium ion and potassium ion in Mo layer are at high temperature diffused in CIGS absorbed layer, thus realizing the co-doped of sodium ion and potassium ion. Adjust the content of sodium ion and potassium ion compound in Mo target, it is possible to adjust the doping content of sodium ion and potassium ion in CIGS absorbed layer. This concentration is generally 0.01% to 1%.
4. according to claim 1 when preparing copper indium gallium selenium solar cell, if adopting the technology of coevaporation to carry out depositing CIGS absorber layer, it is possible to come sodium contaminated ion and potassium ion by the way steamed altogether. While copper, indium, gallium, four kinds of element coevaporations of selenium, the compound of hydatogenesis sodium ion and potassium ion, for instance sodium fluoride and potassium fluoride, or sodium sulfide and Potassium monosulfide., sodium selenide and potassium selenide etc. Adjust temperature and the speed of evaporation, it is possible to adjust the doping content of sodium ion and potassium ion in CIGS absorbed layer. This concentration is generally 0.01% to 1%.
5. according to claim 1 when preparing copper indium gallium selenium solar cell, after CIGS absorbed layer has deposited, with the compound (5-100nm) of way one layer of sodium ion of deposition of thermal evaporation and potassium ion on CIGS absorbed layer, such as sodium fluoride and potassium fluoride, or sodium sulfide and Potassium monosulfide., sodium selenide and potassium selenide etc., then carry out the high temperature anneal, annealing temperature 200 600 degrees Celsius, it is possible to realize the co-doped of sodium ion and potassium ion. Adjust the deposit thickness (5-100nm) of the compound of sodium ion and potassium ion and annealing temperature, it is possible to achieve the optimum co-doped concentration (being generally 0.01% to 1%) of sodium ion and potassium ion.
6. according to claim 1 when preparing copper indium gallium selenium solar cell, when using solwution method depositing CIGS absorber layer, the CIGS precursor solution of preparation adds the compound of sodium ion and potassium ion, such as sodium fluoride and potassium fluoride, or sodium sulfide and Potassium monosulfide., sodium selenide and potassium selenide etc., doping content is generally 0.01% to 3%, is then uniformly mixed. Then according to the solwution method technology of standard prepares CIGS absorbed layer, so while completing CIGS absorbed layer, also complete the co-doped of sodium ion and potassium ion.
Priority Applications (1)
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| CN108914070A (en) * | 2018-06-08 | 2018-11-30 | 研创应用材料（赣州）股份有限公司 | A kind of CIGS titanium electrode aluminium alloy compound target material and preparation method thereof |
| CN109735808A (en) * | 2018-12-25 | 2019-05-10 | 北京铂阳顶荣光伏科技有限公司 | A kind of thin-film solar cells coating apparatus and its film plating process |
| CN110034206A (en) * | 2019-04-26 | 2019-07-19 | 潮州市亿加光电科技有限公司 | A kind of CIGS solar battery and preparation method thereof with alkali metal composite layer |
| CN110047966A (en) * | 2019-04-26 | 2019-07-23 | 潮州市亿加光电科技有限公司 | A kind of flexible substrates CIGS solar battery and preparation method thereof |
| CN111223963A (en) * | 2019-11-29 | 2020-06-02 | 尚越光电科技股份有限公司 | Alkali metal doping treatment method for large-scale production of copper indium gallium selenide thin-film solar cells |
| CN111326602A (en) * | 2018-12-17 | 2020-06-23 | 北京铂阳顶荣光伏科技有限公司 | Annealing process, device and preparation method of copper indium gallium selenide solar thin film |
| CN111370510A (en) * | 2018-12-25 | 2020-07-03 | 华夏易能（广东）新能源科技有限公司 | Thin-film solar cell modification method and cell prepared by same |
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| CN108198892A (en) * | 2017-12-22 | 2018-06-22 | 兰州空间技术物理研究所 | A kind of preparation method for mixing potassium flexible copper indium gallium selenide thin-film solar cell |
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| CN111370510A (en) * | 2018-12-25 | 2020-07-03 | 华夏易能（广东）新能源科技有限公司 | Thin-film solar cell modification method and cell prepared by same |
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| CN111977685A (en) * | 2020-06-09 | 2020-11-24 | 河南大学 | Preparation method of sodium ion battery negative electrode material |
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