CN104752557A - Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell - Google Patents

Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell Download PDF

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Publication number
CN104752557A
CN104752557A CN201310755636.2A CN201310755636A CN104752557A CN 104752557 A CN104752557 A CN 104752557A CN 201310755636 A CN201310755636 A CN 201310755636A CN 104752557 A CN104752557 A CN 104752557A
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layer
trapping structure
light trapping
solar cell
back electrode
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Inventor
申绪男
赵岳
王赫
杨亦桐
邓朝文
赵彦民
乔在祥
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CETC 18 Research Institute
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CETC 18 Research Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876Particular processes or apparatus for batch treatment of the devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a preparation method of a light trapping structure type copper indium gallium diselenide thin film solar cell. The method comprises the steps of 1, manufacturing a substrate with a rough surface; 2, manufacturing a back electrode on the rough surface of the substrate; 3, manufacturing a copper indium gallium diselenide thin film on the surface of the back electrode; 4, manufacturing buffering layers on the upper surface of the copper indium gallium diselenide thin film from bottom to top in a sequence, including an i-ZnO layer, a transparent window layer, an anti-reflection layer and a grid line electrode, so as to finish the manufacturing of the light trapping structure type copper indium gallium diselenide thin film solar cell. According to the method, the 1micron copper indium gallium diselenide thin film can be formed by coevaporation on the back electrode of the rough surface and corroded to form the light trapping structure type copper indium gallium diselenide thin film solar cell of which the root mean square roughness is less than 20nm, so that the effective optical path of the light in an absorbing layer can be increased, the utilization of rare metal resources is greatly reduced on the premise that the utilization rate of solar light is not reduced, and as a result, the solar light can be effectively utilized, the production cost of a battery is greatly reduced; the method has a wide application prospect.

Description

The preparation method of light trapping structure CIGS thin-film solar cell
Technical field
The invention belongs to CIGS thin-film solar cell manufacture technology field, particularly relate to a kind of preparation method of light trapping structure CIGS thin-film solar cell.
Background technology
21 century, the maximum problem of facing mankind not only has energy problem, and environmental problem in addition, utilizes solar energy to solve the global energy and environmental problem is more and more subject to people's attention, and various solar cell arises at the historic moment.Cause in the crisis of global warming at energy worsening shortages with excessively using fossil fuels, solar energy power generating has become the clear energy sources that various countries pay the utmost attention to development.Copper Indium Gallium Selenide (Copper Indium Gallium Selenide) compound solar cell because conversion efficiency is high, low light level power generation performance is good, good stability, the advantage such as undamped and become one of most promising photovoltaic device.But due to continuing to increase of electronic product demand, the demand for various rare metal also grows with each passing day, and the price of rare metal goes up day by day.Under this overall background, the utilance improving rare metal has huge meaning for protection rare metal resources and reduction battery production cost.
In Copper Indium Gallium Selenide (CIGS) thin film solar cell, absorbed layer is the core of whole battery, and transporting of most of photo-generated carrier completed by absorbed layer (p-type Copper Indium Gallium Selenide layer) with collection work.In order to ensure the abundant absorption of battery to light, mostly the thickness of CuInGaSe absorbed layer is made 1.5 to 2.5 μm; Because Copper Indium Gallium Selenide all belongs to valuable rare metal resources, the cost of manufacture of CIGS thin-film solar cell is caused to be difficult to decline.
Summary of the invention
The present invention provides a kind of on the basis of utilance of not losing sunlight for solving in known technology the technical problem that exists, the use of less Copper Indium Gallium Selenide material, significantly reduces the preparation method of the light trapping structure CIGS thin-film solar cell of battery cost of manufacture.
The present invention includes following technical scheme:
The preparation method of light trapping structure CIGS thin-film solar cell, is characterized in: comprise following preparation process:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw-1kw, and pressure is 3 × 10 -2pa-5 × 10 -2pa, passes through Ar 2carrying out to calcium soda-lime glass, PI, titanium foil or stainless steel one side the plasma etching that r.m.s. roughness is 50-100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the Mo of 500-700nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Traditional coevaporation three-step approach is adopted to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, adopt corrosion alkali lye to show to carry out corrosion treatment to CuInGaSe absorbed layer, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form light trapping structure CuInGaSe absorbed layer;
Step 4. makes light trapping structure CIGS thin-film solar cell
Resilient coating 4 is made successively from bottom to top on light trapping structure CIGS thin-film; I-ZnO layer 5; Transparent window layer 6; Antireflection layer 7 and gate line electrode 8, complete the manufacturing process of light trapping structure CIGS thin-film solar cell of the present invention.
The present invention can also adopt following technical measures:
The NaOH solution of described corrosion alkali lye to be concentration be 1.5mol/L, corrosion temperature is 80 DEG C-85 DEG C.
Described back electrode is double-deck Mo structure.
Described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick 2layer; Described gate line electrode is 2 μm of thick Ni-Al.
The advantage that the present invention has and good effect:
1 μm of thick CIGS thin-film that the present invention is formed by coevaporation on matsurface back electrode, through corrosion, form the CuInGaSe absorbed layer that surface Root Mean Square roughness is the light trapping structure of below 20nm, add light in absorbed layer effective light path of process, on the basis of utilance of not losing sunlight, the significantly less utilization of rare metal resources, had both achieved the effective utilization to sunlight, significantly reduce again the production cost of battery, there is application prospect extremely widely.
Accompanying drawing explanation
Fig. 1 is light trapping structure CIGS thin-film solar cell schematic diagram prepared by the present invention.
In figure, 1-substrate, 2-back electrode, 3-CuInGaSe absorbed layer, 4-resilient coating, 5-i-ZnO layer, 6-transparent window layer, 7-antireflection layer, 8-gate line electrode.
Embodiment
For summary of the invention of the present invention, Characteristic can be disclosed further, be also described in detail as follows by reference to the accompanying drawings especially exemplified by following instance:
The preparation method of light trapping structure CIGS thin-film solar cell, is characterized in: comprise following preparation process:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw-1kw, and pressure is 3 × 10 -2pa-5 × 10 -2pa, passes through Ar 2carrying out to calcium soda-lime glass, PI, titanium foil or stainless steel one side the plasma etching that r.m.s. roughness is 50-100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the Mo of 500-700nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Traditional coevaporation three-step approach is adopted to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, adopt corrosion alkali lye to show to carry out corrosion treatment to CuInGaSe absorbed layer, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form light trapping structure CuInGaSe absorbed layer;
Step 4. makes light trapping structure CIGS thin-film solar cell
Resilient coating 4 is made successively from bottom to top on light trapping structure CIGS thin-film; I-ZnO layer 5; Transparent window layer 6; Antireflection layer 7 and gate line electrode 8, complete the manufacturing process of light trapping structure CIGS thin-film solar cell of the present invention.
The NaOH solution of described corrosion alkali lye to be concentration be 1.5mol/L, corrosion temperature is 80 DEG C-85 DEG C.
Described back electrode is double-deck Mo structure.
Described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick 2layer; Described gate line electrode is 2 μm of thick Ni-Al.
Embodiment 1:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw, and pressure is 4 × 10 -2pa, passes through Ar 2carrying out to titanium foil one side the plasma etching that r.m.s. roughness is 100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the double-deck Mo structure of 600nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Put into vacuum chamber after being cleaned by the titanium foil being shaped with back electrode, adopt traditional coevaporation three-step approach to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, concentration is adopted to be the NaOH solution of 1.5mol/L, corrosion temperature is to CIGS thin-film, the corrosion alkali lye of 85 DEG C shows that layer carries out corrosion treatment, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form the light trapping structure CuInGaSe absorbed layer 3 that thickness is 1 μm;
Step 4. makes light trapping structure CIGS thin-film solar cell
The thick CdS resilient coating 4 of 50nm is made successively from bottom to top on light trapping structure CuInGaSe absorbed layer; The i-ZnO layer 5 that 50nm is thick; The ZnO:Al transparent window layer 6 that 350nm is thick; The MgF that 100nm is thick 2antireflection layer 7 and 2 μm of thick Ni-Al gate line electrodes 8, complete the manufacturing process of a kind of light trapping structure CIGS thin-film solar cell of the present invention as indicated with 1.
Embodiment 2:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 1kw, and pressure is 5 × 10 -2pa, passes through Ar 2carrying out to stainless steel foil one side the plasma etching that r.m.s. roughness is 100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the double-deck Mo structure of 600nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Put into vacuum chamber after being cleaned by the titanium foil being shaped with back electrode, adopt traditional coevaporation three-step approach to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, concentration is adopted to be the NaOH solution of 1.5mol/L, corrosion temperature is to CIGS thin-film, the corrosion alkali lye of 85 DEG C shows that layer carries out corrosion treatment, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form the light trapping structure CuInGaSe absorbed layer 3 that thickness is 1 μm;
Step 4. makes light trapping structure CIGS thin-film solar cell and make the thick CdS resilient coating 4 of 50nm successively from bottom to top on light trapping structure CuInGaSe absorbed layer; The i-ZnO layer 5 that 50nm is thick; The ZnO:Al transparent window layer 6 that 350nm is thick; The MgF that 100nm is thick 2antireflection layer 7 and 2 μm of thick Ni-Al gate line electrodes 8, complete the manufacturing process of a kind of light trapping structure CIGS thin-film solar cell of the present invention as indicated with 1.
Although be described the preferred embodiments of the present invention by reference to the accompanying drawings above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing under the ambit that present inventive concept and claim protect, a lot of form can also be made.These all belong within protection scope of the present invention.

Claims (4)

1. the preparation method of light trapping structure CIGS thin-film solar cell, is characterized in that: comprise following preparation process:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw-1kw, and pressure is 3 × 10 -2pa-5 × 10 -2pa, passes through Ar 2carrying out to calcium soda-lime glass, PI, titanium foil or stainless steel one side the plasma etching that r.m.s. roughness is 50-100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the Mo of 500-700nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Traditional coevaporation three-step approach is adopted to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, adopt corrosion alkali lye to show to carry out corrosion treatment to CuInGaSe absorbed layer, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form light trapping structure CuInGaSe absorbed layer;
Step 4. makes light trapping structure CIGS thin-film solar cell
Resilient coating 4 is made successively from bottom to top on light trapping structure CIGS thin-film; I-ZnO layer 5; Transparent window layer 6; Antireflection layer 7 and gate line electrode 8, complete the manufacturing process of light trapping structure CIGS thin-film solar cell of the present invention.
2. the preparation method of light trapping structure CIGS thin-film solar cell according to claim 1, is characterized in that: the NaOH solution of described corrosion alkali lye to be concentration be 1.5mol/L, corrosion temperature is 80 DEG C-85 DEG C.
3. the preparation method of light trapping structure CIGS thin-film solar cell according to claim 1, is characterized in that: described back electrode is double-deck Mo structure.
4. the preparation method of light trapping structure CIGS thin-film solar cell according to claim 1, is characterized in that: described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick 2layer; Described gate line electrode is 2 μm of thick Ni-Al.
CN201310755636.2A 2013-12-31 2013-12-31 Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell Pending CN104752557A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768476A (en) * 2017-11-22 2018-03-06 杨晓艳 A kind of device architecture of CIGS thin-film solar cell and preparation method thereof
CN107994079A (en) * 2017-08-11 2018-05-04 北京汉能光伏投资有限公司 Flexible thin-film battery and preparation method thereof
CN108735861A (en) * 2018-06-04 2018-11-02 北京铂阳顶荣光伏科技有限公司 A kind of solar battery sheet and preparation method thereof, Preparation equipment and solar cell

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Publication number Priority date Publication date Assignee Title
JP2007201304A (en) * 2006-01-30 2007-08-09 Honda Motor Co Ltd Solar cell and its manufacturing method
CN101154695A (en) * 2007-09-30 2008-04-02 南开大学 Method for producing solar cell with flexible transfer underlay by using suede temporary underlay
CN101246924A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Solar battery with substrate having texture surface
CN101740658A (en) * 2008-11-06 2010-06-16 北京北方微电子基地设备工艺研究中心有限责任公司 Thin-film solar cell and preparation method thereof
CN101752454A (en) * 2008-12-04 2010-06-23 上海空间电源研究所 Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure
CN102231398A (en) * 2011-06-29 2011-11-02 中国科学院深圳先进技术研究院 Copper-indium-gallium-selenium thin film battery with suede and preparation method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201304A (en) * 2006-01-30 2007-08-09 Honda Motor Co Ltd Solar cell and its manufacturing method
CN101246924A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Solar battery with substrate having texture surface
CN101154695A (en) * 2007-09-30 2008-04-02 南开大学 Method for producing solar cell with flexible transfer underlay by using suede temporary underlay
CN101740658A (en) * 2008-11-06 2010-06-16 北京北方微电子基地设备工艺研究中心有限责任公司 Thin-film solar cell and preparation method thereof
CN101752454A (en) * 2008-12-04 2010-06-23 上海空间电源研究所 Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure
CN102231398A (en) * 2011-06-29 2011-11-02 中国科学院深圳先进技术研究院 Copper-indium-gallium-selenium thin film battery with suede and preparation method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107994079A (en) * 2017-08-11 2018-05-04 北京汉能光伏投资有限公司 Flexible thin-film battery and preparation method thereof
CN107768476A (en) * 2017-11-22 2018-03-06 杨晓艳 A kind of device architecture of CIGS thin-film solar cell and preparation method thereof
CN108735861A (en) * 2018-06-04 2018-11-02 北京铂阳顶荣光伏科技有限公司 A kind of solar battery sheet and preparation method thereof, Preparation equipment and solar cell

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Application publication date: 20150701