CN104752557A - Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell - Google Patents
Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell Download PDFInfo
- Publication number
- CN104752557A CN104752557A CN201310755636.2A CN201310755636A CN104752557A CN 104752557 A CN104752557 A CN 104752557A CN 201310755636 A CN201310755636 A CN 201310755636A CN 104752557 A CN104752557 A CN 104752557A
- Authority
- CN
- China
- Prior art keywords
- layer
- trapping structure
- light trapping
- solar cell
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title abstract 7
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 31
- 238000005260 corrosion Methods 0.000 claims description 19
- 230000007797 corrosion Effects 0.000 claims description 19
- 238000001020 plasma etching Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910003310 Ni-Al Inorganic materials 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 4
- 230000003139 buffering effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 36
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a preparation method of a light trapping structure type copper indium gallium diselenide thin film solar cell. The method comprises the steps of 1, manufacturing a substrate with a rough surface; 2, manufacturing a back electrode on the rough surface of the substrate; 3, manufacturing a copper indium gallium diselenide thin film on the surface of the back electrode; 4, manufacturing buffering layers on the upper surface of the copper indium gallium diselenide thin film from bottom to top in a sequence, including an i-ZnO layer, a transparent window layer, an anti-reflection layer and a grid line electrode, so as to finish the manufacturing of the light trapping structure type copper indium gallium diselenide thin film solar cell. According to the method, the 1micron copper indium gallium diselenide thin film can be formed by coevaporation on the back electrode of the rough surface and corroded to form the light trapping structure type copper indium gallium diselenide thin film solar cell of which the root mean square roughness is less than 20nm, so that the effective optical path of the light in an absorbing layer can be increased, the utilization of rare metal resources is greatly reduced on the premise that the utilization rate of solar light is not reduced, and as a result, the solar light can be effectively utilized, the production cost of a battery is greatly reduced; the method has a wide application prospect.
Description
Technical field
The invention belongs to CIGS thin-film solar cell manufacture technology field, particularly relate to a kind of preparation method of light trapping structure CIGS thin-film solar cell.
Background technology
21 century, the maximum problem of facing mankind not only has energy problem, and environmental problem in addition, utilizes solar energy to solve the global energy and environmental problem is more and more subject to people's attention, and various solar cell arises at the historic moment.Cause in the crisis of global warming at energy worsening shortages with excessively using fossil fuels, solar energy power generating has become the clear energy sources that various countries pay the utmost attention to development.Copper Indium Gallium Selenide (Copper Indium Gallium Selenide) compound solar cell because conversion efficiency is high, low light level power generation performance is good, good stability, the advantage such as undamped and become one of most promising photovoltaic device.But due to continuing to increase of electronic product demand, the demand for various rare metal also grows with each passing day, and the price of rare metal goes up day by day.Under this overall background, the utilance improving rare metal has huge meaning for protection rare metal resources and reduction battery production cost.
In Copper Indium Gallium Selenide (CIGS) thin film solar cell, absorbed layer is the core of whole battery, and transporting of most of photo-generated carrier completed by absorbed layer (p-type Copper Indium Gallium Selenide layer) with collection work.In order to ensure the abundant absorption of battery to light, mostly the thickness of CuInGaSe absorbed layer is made 1.5 to 2.5 μm; Because Copper Indium Gallium Selenide all belongs to valuable rare metal resources, the cost of manufacture of CIGS thin-film solar cell is caused to be difficult to decline.
Summary of the invention
The present invention provides a kind of on the basis of utilance of not losing sunlight for solving in known technology the technical problem that exists, the use of less Copper Indium Gallium Selenide material, significantly reduces the preparation method of the light trapping structure CIGS thin-film solar cell of battery cost of manufacture.
The present invention includes following technical scheme:
The preparation method of light trapping structure CIGS thin-film solar cell, is characterized in: comprise following preparation process:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw-1kw, and pressure is 3 × 10
-2pa-5 × 10
-2pa, passes through Ar
2carrying out to calcium soda-lime glass, PI, titanium foil or stainless steel one side the plasma etching that r.m.s. roughness is 50-100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the Mo of 500-700nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Traditional coevaporation three-step approach is adopted to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, adopt corrosion alkali lye to show to carry out corrosion treatment to CuInGaSe absorbed layer, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form light trapping structure CuInGaSe absorbed layer;
Step 4. makes light trapping structure CIGS thin-film solar cell
Resilient coating 4 is made successively from bottom to top on light trapping structure CIGS thin-film; I-ZnO layer 5; Transparent window layer 6; Antireflection layer 7 and gate line electrode 8, complete the manufacturing process of light trapping structure CIGS thin-film solar cell of the present invention.
The present invention can also adopt following technical measures:
The NaOH solution of described corrosion alkali lye to be concentration be 1.5mol/L, corrosion temperature is 80 DEG C-85 DEG C.
Described back electrode is double-deck Mo structure.
Described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick
2layer; Described gate line electrode is 2 μm of thick Ni-Al.
The advantage that the present invention has and good effect:
1 μm of thick CIGS thin-film that the present invention is formed by coevaporation on matsurface back electrode, through corrosion, form the CuInGaSe absorbed layer that surface Root Mean Square roughness is the light trapping structure of below 20nm, add light in absorbed layer effective light path of process, on the basis of utilance of not losing sunlight, the significantly less utilization of rare metal resources, had both achieved the effective utilization to sunlight, significantly reduce again the production cost of battery, there is application prospect extremely widely.
Accompanying drawing explanation
Fig. 1 is light trapping structure CIGS thin-film solar cell schematic diagram prepared by the present invention.
In figure, 1-substrate, 2-back electrode, 3-CuInGaSe absorbed layer, 4-resilient coating, 5-i-ZnO layer, 6-transparent window layer, 7-antireflection layer, 8-gate line electrode.
Embodiment
For summary of the invention of the present invention, Characteristic can be disclosed further, be also described in detail as follows by reference to the accompanying drawings especially exemplified by following instance:
The preparation method of light trapping structure CIGS thin-film solar cell, is characterized in: comprise following preparation process:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw-1kw, and pressure is 3 × 10
-2pa-5 × 10
-2pa, passes through Ar
2carrying out to calcium soda-lime glass, PI, titanium foil or stainless steel one side the plasma etching that r.m.s. roughness is 50-100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the Mo of 500-700nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Traditional coevaporation three-step approach is adopted to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, adopt corrosion alkali lye to show to carry out corrosion treatment to CuInGaSe absorbed layer, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form light trapping structure CuInGaSe absorbed layer;
Step 4. makes light trapping structure CIGS thin-film solar cell
Resilient coating 4 is made successively from bottom to top on light trapping structure CIGS thin-film; I-ZnO layer 5; Transparent window layer 6; Antireflection layer 7 and gate line electrode 8, complete the manufacturing process of light trapping structure CIGS thin-film solar cell of the present invention.
The NaOH solution of described corrosion alkali lye to be concentration be 1.5mol/L, corrosion temperature is 80 DEG C-85 DEG C.
Described back electrode is double-deck Mo structure.
Described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick
2layer; Described gate line electrode is 2 μm of thick Ni-Al.
Embodiment 1:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw, and pressure is 4 × 10
-2pa, passes through Ar
2carrying out to titanium foil one side the plasma etching that r.m.s. roughness is 100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the double-deck Mo structure of 600nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Put into vacuum chamber after being cleaned by the titanium foil being shaped with back electrode, adopt traditional coevaporation three-step approach to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, concentration is adopted to be the NaOH solution of 1.5mol/L, corrosion temperature is to CIGS thin-film, the corrosion alkali lye of 85 DEG C shows that layer carries out corrosion treatment, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form the light trapping structure CuInGaSe absorbed layer 3 that thickness is 1 μm;
Step 4. makes light trapping structure CIGS thin-film solar cell
The thick CdS resilient coating 4 of 50nm is made successively from bottom to top on light trapping structure CuInGaSe absorbed layer; The i-ZnO layer 5 that 50nm is thick; The ZnO:Al transparent window layer 6 that 350nm is thick; The MgF that 100nm is thick
2antireflection layer 7 and 2 μm of thick Ni-Al gate line electrodes 8, complete the manufacturing process of a kind of light trapping structure CIGS thin-film solar cell of the present invention as indicated with 1.
Embodiment 2:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 1kw, and pressure is 5 × 10
-2pa, passes through Ar
2carrying out to stainless steel foil one side the plasma etching that r.m.s. roughness is 100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the double-deck Mo structure of 600nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Put into vacuum chamber after being cleaned by the titanium foil being shaped with back electrode, adopt traditional coevaporation three-step approach to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, concentration is adopted to be the NaOH solution of 1.5mol/L, corrosion temperature is to CIGS thin-film, the corrosion alkali lye of 85 DEG C shows that layer carries out corrosion treatment, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form the light trapping structure CuInGaSe absorbed layer 3 that thickness is 1 μm;
Step 4. makes light trapping structure CIGS thin-film solar cell and make the thick CdS resilient coating 4 of 50nm successively from bottom to top on light trapping structure CuInGaSe absorbed layer; The i-ZnO layer 5 that 50nm is thick; The ZnO:Al transparent window layer 6 that 350nm is thick; The MgF that 100nm is thick
2antireflection layer 7 and 2 μm of thick Ni-Al gate line electrodes 8, complete the manufacturing process of a kind of light trapping structure CIGS thin-film solar cell of the present invention as indicated with 1.
Although be described the preferred embodiments of the present invention by reference to the accompanying drawings above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing under the ambit that present inventive concept and claim protect, a lot of form can also be made.These all belong within protection scope of the present invention.
Claims (4)
1. the preparation method of light trapping structure CIGS thin-film solar cell, is characterized in that: comprise following preparation process:
Step 1. makes the substrate that one side is matsurface
Using plasma etching machine, arranging power is 0.5kw-1kw, and pressure is 3 × 10
-2pa-5 × 10
-2pa, passes through Ar
2carrying out to calcium soda-lime glass, PI, titanium foil or stainless steel one side the plasma etching that r.m.s. roughness is 50-100nm, is the substrate 1 of matsurface as one side;
Step 2. makes back electrode on the matsurface of substrate
, thickness identical with the roughness of substrate matsurface at matsurface deposited on substrates by Deposited By Dc Magnetron Sputtering system is that the Mo of 500-700nm is as back electrode 2;
Step 3. makes light trapping structure CuInGaSe absorbed layer on the surface of back electrode
Traditional coevaporation three-step approach is adopted to make CuInGaSe absorbed layer on back electrode; Back electrode is formed matsurface CIGS thin-film, adopt corrosion alkali lye to show to carry out corrosion treatment to CuInGaSe absorbed layer, until the r.m.s. roughness on CIGS thin-film surface is below 20nm's, form light trapping structure CuInGaSe absorbed layer;
Step 4. makes light trapping structure CIGS thin-film solar cell
Resilient coating 4 is made successively from bottom to top on light trapping structure CIGS thin-film; I-ZnO layer 5; Transparent window layer 6; Antireflection layer 7 and gate line electrode 8, complete the manufacturing process of light trapping structure CIGS thin-film solar cell of the present invention.
2. the preparation method of light trapping structure CIGS thin-film solar cell according to claim 1, is characterized in that: the NaOH solution of described corrosion alkali lye to be concentration be 1.5mol/L, corrosion temperature is 80 DEG C-85 DEG C.
3. the preparation method of light trapping structure CIGS thin-film solar cell according to claim 1, is characterized in that: described back electrode is double-deck Mo structure.
4. the preparation method of light trapping structure CIGS thin-film solar cell according to claim 1, is characterized in that: described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick
2layer; Described gate line electrode is 2 μm of thick Ni-Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310755636.2A CN104752557A (en) | 2013-12-31 | 2013-12-31 | Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310755636.2A CN104752557A (en) | 2013-12-31 | 2013-12-31 | Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104752557A true CN104752557A (en) | 2015-07-01 |
Family
ID=53591945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310755636.2A Pending CN104752557A (en) | 2013-12-31 | 2013-12-31 | Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104752557A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768476A (en) * | 2017-11-22 | 2018-03-06 | 杨晓艳 | A kind of device architecture of CIGS thin-film solar cell and preparation method thereof |
| CN107994079A (en) * | 2017-08-11 | 2018-05-04 | 北京汉能光伏投资有限公司 | Flexible thin-film battery and preparation method thereof |
| CN108735861A (en) * | 2018-06-04 | 2018-11-02 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof, Preparation equipment and solar cell |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007201304A (en) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | Solar cell and its manufacturing method |
| CN101154695A (en) * | 2007-09-30 | 2008-04-02 | 南开大学 | Method for producing solar cell with flexible transfer underlay by using suede temporary underlay |
| CN101246924A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Solar battery with substrate having texture surface |
| CN101740658A (en) * | 2008-11-06 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Thin-film solar cell and preparation method thereof |
| CN101752454A (en) * | 2008-12-04 | 2010-06-23 | 上海空间电源研究所 | Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure |
| CN102231398A (en) * | 2011-06-29 | 2011-11-02 | 中国科学院深圳先进技术研究院 | Copper-indium-gallium-selenium thin film battery with suede and preparation method |
-
2013
- 2013-12-31 CN CN201310755636.2A patent/CN104752557A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007201304A (en) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | Solar cell and its manufacturing method |
| CN101246924A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Solar battery with substrate having texture surface |
| CN101154695A (en) * | 2007-09-30 | 2008-04-02 | 南开大学 | Method for producing solar cell with flexible transfer underlay by using suede temporary underlay |
| CN101740658A (en) * | 2008-11-06 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Thin-film solar cell and preparation method thereof |
| CN101752454A (en) * | 2008-12-04 | 2010-06-23 | 上海空间电源研究所 | Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure |
| CN102231398A (en) * | 2011-06-29 | 2011-11-02 | 中国科学院深圳先进技术研究院 | Copper-indium-gallium-selenium thin film battery with suede and preparation method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994079A (en) * | 2017-08-11 | 2018-05-04 | 北京汉能光伏投资有限公司 | Flexible thin-film battery and preparation method thereof |
| CN107768476A (en) * | 2017-11-22 | 2018-03-06 | 杨晓艳 | A kind of device architecture of CIGS thin-film solar cell and preparation method thereof |
| CN108735861A (en) * | 2018-06-04 | 2018-11-02 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof, Preparation equipment and solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102306666B (en) | Copper indium gallium selenium (CIGS) solar battery with gradient energy band and preparation method thereof | |
| CN102270705B (en) | Method for preparing transparent conductive electrode with dual-structure texture surface | |
| CN105632903A (en) | Sodium-potassium co-doping technology for preparing high-efficiency copper indium gallium selenide solar cell | |
| CN104143587A (en) | Surface passivation technology capable of improving performance of copper indium gallium selenium thin-film solar cells | |
| CN102299206A (en) | Heterojunction solar cell and manufacturing method thereof | |
| CN102332499B (en) | Method for utilizing microparticles to produce double-textured transparent electrode | |
| CN105742402B (en) | The preparation method and its structure of a kind of lamination solar cell | |
| CN104681642A (en) | Oxygen plasma back electrode processing technology capable of improving performance of copper indium gallium selenide thin-film solar cell | |
| CN105870214A (en) | CIGS thin film solar cell | |
| CN106558628A (en) | A kind of preparation method of CIGS thin film window layer of solar battery | |
| CN104752557A (en) | Preparation method of light trapping structure type copper indium gallium diselenide thin film solar cell | |
| CN102916060B (en) | Silicon-based thin-film solar cell and preparation method thereof | |
| CN103296124A (en) | Flexible cigs thin film solar cell | |
| CN102368513B (en) | Preparation method of double-structure suede transparent conducting oxide thin film of thin film cell | |
| CN102157596B (en) | Barrier type silicon-based thin film semi-laminated solar cell | |
| CN101882653B (en) | Preparation method of solar battery based on nano CdS (Cadmium Sulfide) film | |
| CN203721739U (en) | CIGS film solar battery | |
| CN103474518B (en) | Multi-hole pyramid anti-reflection structure preparation method and HIT solar cell preparation technology | |
| CN102637751A (en) | Broad-spectrum light trapping transparent electroconductive film for solar battery and preparation method thereof | |
| CN103972321B (en) | Fibrous silicon-based thin-film solar cell and preparation method thereof | |
| CN204332980U (en) | A kind of HIT solar cell | |
| CN101707218B (en) | Preparation method of common pole-type thin film solar cell | |
| CN203325950U (en) | Multi-band-gap double-face light-transmission solar cell | |
| CN207967012U (en) | A kind of amorphous silicon thin-film solar cell | |
| CN111435686A (en) | Copper indium gallium selenide thin-film solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150701 |