CN203721739U - CIGS film solar battery - Google Patents
CIGS film solar battery Download PDFInfo
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- CN203721739U CN203721739U CN201320895171.6U CN201320895171U CN203721739U CN 203721739 U CN203721739 U CN 203721739U CN 201320895171 U CN201320895171 U CN 201320895171U CN 203721739 U CN203721739 U CN 203721739U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model relates to a CIGS film solar battery, successively comprising a substrate, a back electrode, a CIGS absorbing layer, a buffer layer, an i-ZnO layer, a transparent window layer, an antireflection layer and a grid line electrode from bottom to top, and characterized in that the roughness of the surface of the substrate located on the back electrode, the roughness of the two surfaces of the back electrode, and the roughness of the contact surface between the CIGS absorbing layer and the back electrode are the same; the root-mean-square roughness of the other surface of the CIGS absorbing layer is less than 20 nm; the thickest thickness of the CIGS absorbing layer is no greater than 1 [mu] m. According to the utility model, a CIGS film with a thickness no greater than1 [mu] m is prepared on a rough surface back electrode, and the root-mean-square roughness of the other surface of the CIGS film is less than 20 nm, which increases an effective optical path passed by light in the absorbing layer and substantially reduces the use of rare metal resources under the condition of not losing sunlight use ratio, thereby effectively utilizing sunlight and greatly reducing battery production cost, and thus the CIGS film solar battery possesses very wide application prospect.
Description
Technical field
The utility model belongs to CIGS thin-film solar cell manufacture technology field, particularly relates to a kind of CIGS thin-film solar cell.
Background technology
21 century, the maximum problem of facing mankind was not only to have energy problem, also had environmental problem, utilized solar energy to solve the global energy and environmental problem is more and more subject to people's attention, and various solar cells arise at the historic moment.At energy worsening shortages, cause in the crisis of global warming with excessively using ore fuel, solar energy power generating has become the clear energy sources that various countries pay the utmost attention to development.Copper Indium Gallium Selenide (Copper Indium Gallium Selenide) compound solar cell because conversion efficiency is high, low light level power generation performance is good, good stability, the advantage such as undamped become one of most promising photovoltaic device.Yet, due to continuing to increase of electronic product demand, for the demand of various rare metals, also growing with each passing day, the price of rare metal goes up day by day.Under this overall background, the utilance that improves rare metal has huge meaning for protection rare metal resources and reduction battery production cost.
In Copper Indium Gallium Selenide (CIGS) thin film solar cell, absorbed layer is the core of whole battery, and transport and the collection work of most of photo-generated carrier is to be completed by absorbed layer (p-type Copper Indium Gallium Selenide layer).In order to guarantee the abundant absorption of battery to light, mostly the thickness of CuInGaSe absorbed layer is made to 1.5 to 2.5 μ m; Because Copper Indium Gallium Selenide all belongs to valuable rare metal resources, cause the cost of manufacture of CIGS thin-film solar cell to be difficult to decline.
Summary of the invention
The utility model provides a kind of on the basis of utilance of not losing sunlight for solving the technical problem existing in known technology, and the use of less Copper Indium Gallium Selenide material significantly reduces a kind of CIGS thin-film solar cell of battery cost of manufacture.
The utility model comprises following technical scheme:
A kind of CIGS thin-film solar cell, comprise successively from bottom to top: substrate, back electrode, CuInGaSe absorbed layer, resilient coating, i-ZnO layer, transparent window layer, antireflection layer and gate line electrode, be characterized in: the r.m.s. roughness that described substrate is positioned at back electrode one side is 80-120nm, the two sides r.m.s. roughness of described back electrode is all identical with the back electrode r.m.s. roughness that is positioned at substrate one side, described CuInGaSe absorbed layer is identical with the r.m.s. roughness of back electrode face with the face of back electrode contact, CuInGaSe absorbed layer another side r.m.s. roughness is below 20nm, the thickness of CuInGaSe absorbed layer thick is≤1 μ m.
The utility model can also adopt following technical measures:
Described back electrode is double-deck Mo structure, and the thickness of back electrode thick is 600nm.
Described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick
2layer; Described gate line electrode is the thick Ni-Al of 2 μ m.
The advantage the utlity model has and good effect:
The thick CIGS thin-film of 1 μ m that the utility model forms by coevaporation on matsurface back electrode, through corrosion, form the CuInGaSe absorbed layer that surperficial r.m.s. roughness is the light trapping structure below 20nm, increased light in absorbed layer the effective light path of process, on the basis of utilance of not losing sunlight, the significantly less utilization of rare metal resources, had both realized the effective utilization to sunlight, significantly reduce again the production cost of battery, there is application prospect extremely widely.
Accompanying drawing explanation
Fig. 1 is the utility model CIGS thin-film solar cell structural representation.
In figure, 1-substrate, 2-back electrode, 3-CuInGaSe absorbed layer, 4-resilient coating, 5-i-ZnO layer, 6-transparent window layer, 7-antireflection layer, 8-gate line electrode.
Embodiment
For further disclosing summary of the invention of the present utility model, Characteristic, especially exemplified by following instance, be also elaborated by reference to the accompanying drawings as follows:
A kind of CIGS thin-film solar cell, comprise successively from bottom to top: substrate, back electrode, CuInGaSe absorbed layer, resilient coating, i-ZnO layer, transparent window layer, antireflection layer and gate line electrode, be characterized in: the r.m.s. roughness that described substrate is positioned at back electrode one side is 80-120nm, the two sides r.m.s. roughness of described back electrode is all identical with the back electrode r.m.s. roughness that is positioned at substrate one side, described CuInGaSe absorbed layer is identical with the r.m.s. roughness of back electrode face with the face of back electrode contact, CuInGaSe absorbed layer another side r.m.s. roughness is below 20nm, the thickness of CuInGaSe absorbed layer thick is≤1 μ m.
Described back electrode is double-deck Mo structure, and the thickness of back electrode thick is 600nm.
Described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick
2layer; Described gate line electrode is the thick Ni-Al of 2 μ m.
A kind of manufacturing process of the present utility model:
It is the substrate of matsurface that step 1. is made one side
Using plasma etching machine, it is 0.5kW that power is set, pressure is 4 * 10
-2pa, passes through Ar
2titanium foil is simultaneously carried out to the plasma etching that r.m.s. roughness is 100nm, is the substrate 1 of matsurface as one side;
Step 2. is made back electrode on the matsurface of substrate
By Deposited By Dc Magnetron Sputtering system, on matsurface substrate, deposit the double-deck Mo structure identical with the roughness of substrate matsurface, thickness is 600nm as back electrode 2;
Step 3. is made light trapping structure CuInGaSe absorbed layer on the surface of back electrode
After the titanium foil that is shaped with back electrode is cleaned, put into vacuum chamber, adopt traditional coevaporation three-step approach on back electrode, to make CuInGaSe absorbed layer; On back electrode, form matsurface CIGS thin-film, adopt the NaOH solution that concentration is 1.5mol/L, corrosion temperature is that the corrosion alkali lye of 85 ℃ shows that to CIGS thin-film layer carries out corrosion treatment, until the r.m.s. roughness on CIGS thin-film surface is below 20nm, forming thickness is the light trapping structure CuInGaSe absorbed layer 3 of 1 μ m;
Step 4. is made CIGS thin-film solar cell
On light trapping structure CuInGaSe absorbed layer, make successively from bottom to top the CdS resilient coating 4 that 50nm is thick; The i-ZnO layer 5 that 50nm is thick; The ZnO:Al transparent window layer 6 that 350nm is thick; The MgF that 100nm is thick
2antireflection layer 7 and the thick Ni-Al gate line electrode 8 of 2 μ m, complete the manufacturing process of a kind of CIGS thin-film solar cell of the utility model as shown in 1.
Another kind of manufacturing process of the present utility model:
It is the substrate of matsurface that step 1. is made one side
Using plasma etching machine, it is 1kW that power is set, pressure is 5 * 10
-2pa, passes through Ar
2stainless steel foil is simultaneously carried out to the plasma etching that r.m.s. roughness is 100nm, is the substrate 1 of matsurface as one side;
Step 2. is made back electrode on the matsurface of substrate
By Deposited By Dc Magnetron Sputtering system, on matsurface substrate, deposit the double-deck Mo structure identical with the roughness of substrate matsurface, thickness is 600nm as back electrode 2;
Step 3. is made light trapping structure CuInGaSe absorbed layer on the surface of back electrode
After the titanium foil that is shaped with back electrode is cleaned, put into vacuum chamber, adopt traditional coevaporation three-step approach on back electrode, to make CuInGaSe absorbed layer; On back electrode, form matsurface CIGS thin-film, adopt the NaOH solution that concentration is 1.5mol/L, corrosion temperature is that the corrosion alkali lye of 85 ℃ shows that to CIGS thin-film layer carries out corrosion treatment, until the r.m.s. roughness on CIGS thin-film surface is below 20nm, forming thickness is the light trapping structure CuInGaSe absorbed layer 3 of 1 μ m;
Step 4. is made CIGS thin-film solar cell
On light trapping structure CuInGaSe absorbed layer, make successively from bottom to top the CdS resilient coating 4 that 50nm is thick; The i-ZnO layer 5 that 50nm is thick; The ZnO:Al transparent window layer 6 that 350nm is thick; The MgF that 100nm is thick
2antireflection layer 7 and the thick Ni-Al gate line electrode 8 of 2 μ m, complete the manufacturing process of a kind of CIGS thin-film solar cell of the utility model as shown in 1.
Although by reference to the accompanying drawings preferred embodiment of the present utility model is described above; but the utility model is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present utility model; not departing from the scope situation that the utility model aim and claim protect, can also make a lot of forms.Within these all belong to protection range of the present utility model.
Claims (3)
1. a CIGS thin-film solar cell, comprise successively from bottom to top: substrate, back electrode, CuInGaSe absorbed layer, resilient coating, i-ZnO layer, transparent window layer, antireflection layer and gate line electrode, it is characterized in that: the r.m.s. roughness that described substrate is positioned at back electrode one side is 80-120nm, the two sides r.m.s. roughness of described back electrode is all identical with the back electrode r.m.s. roughness that is positioned at substrate one side, described CuInGaSe absorbed layer is identical with the r.m.s. roughness of back electrode face with the face of back electrode contact, CuInGaSe absorbed layer another side r.m.s. roughness is below 20nm, the thickness of CuInGaSe absorbed layer thick is≤1 μ m.
2. a kind of CIGS thin-film solar cell according to claim 1, is characterized in that: described back electrode is double-deck Mo structure, and the thickness of back electrode thick is 600nm.
3. a kind of CIGS thin-film solar cell according to claim 1, is characterized in that: described resilient coating is the CdS layer that 50nm is thick; The thickness of described i-ZnO layer is 50nm; Described transparent window layer is the ZnO:Al layer that 350nm is thick; Described antireflection layer is the MgF that 100nm is thick
2layer; Described gate line electrode is the thick Ni-Al of 2 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320895171.6U CN203721739U (en) | 2013-12-31 | 2013-12-31 | CIGS film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320895171.6U CN203721739U (en) | 2013-12-31 | 2013-12-31 | CIGS film solar battery |
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| Publication Number | Publication Date |
|---|---|
| CN203721739U true CN203721739U (en) | 2014-07-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320895171.6U Expired - Fee Related CN203721739U (en) | 2013-12-31 | 2013-12-31 | CIGS film solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870214A (en) * | 2016-04-14 | 2016-08-17 | 董友强 | CIGS thin film solar cell |
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2013
- 2013-12-31 CN CN201320895171.6U patent/CN203721739U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870214A (en) * | 2016-04-14 | 2016-08-17 | 董友强 | CIGS thin film solar cell |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140716 Termination date: 20171231 |
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| CF01 | Termination of patent right due to non-payment of annual fee |