CN109735808A - A kind of thin-film solar cells coating apparatus and its film plating process - Google Patents
A kind of thin-film solar cells coating apparatus and its film plating process Download PDFInfo
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- CN109735808A CN109735808A CN201811592436.9A CN201811592436A CN109735808A CN 109735808 A CN109735808 A CN 109735808A CN 201811592436 A CN201811592436 A CN 201811592436A CN 109735808 A CN109735808 A CN 109735808A
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- 239000010409 thin film Substances 0.000 title claims abstract description 72
- 239000010408 film Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000007747 plating Methods 0.000 title claims abstract description 24
- 239000011248 coating agent Substances 0.000 title claims abstract description 18
- 238000000576 coating method Methods 0.000 title claims abstract description 18
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 341
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 339
- 238000001883 metal evaporation Methods 0.000 claims abstract description 160
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000012545 processing Methods 0.000 claims abstract description 68
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 15
- 239000011669 selenium Substances 0.000 claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims description 87
- 238000001704 evaporation Methods 0.000 claims description 87
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 claims description 54
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical group [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 33
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 32
- 235000003270 potassium fluoride Nutrition 0.000 claims description 18
- 239000011698 potassium fluoride Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 abstract description 27
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 7
- 210000004027 cell Anatomy 0.000 description 28
- 239000010410 layer Substances 0.000 description 27
- 230000033001 locomotion Effects 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 150000001663 caesium Chemical class 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to technical field of solar batteries, and in particular to a kind of thin-film solar cells coating apparatus and its film plating process.Coating apparatus provided by the invention, including alkali metal processing chamber and the substrate for being plated with CIGS thin-film, alkali metal processing chamber includes: at least two alkali-metal evaporation sources and alkali metal controller；Wherein, alkali metal controller is connect at least two alkali-metal evaporation sources, for controlling the switch state of alkali-metal evaporation source and its in the indoor position of alkali metal process cavity.Scheme provided by the invention, introduce a variety of alkali-metal evaporation sources and according to preset alkali-metal-doped parameter, control switch state and its position of alkali-metal evaporation source, the different collocation such as type, sequence of alkali-metal evaporation source can be achieved, using different alkali metal elements to the otherness of the treatment effect of copper indium gallium selenide film layer, improve CIGS thin-film performance, effectively improves the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of thin-film solar cells coating apparatus and its plating
Film method.
Background technique
Copper-indium-galliun-selenium film solar cell is since it is with photoelectric conversion efficiency height, and dim light performance is good and temperature coefficient is low
Equal excellent performances, get the attention and study, and tentatively realized industrialization, be most potential thin film solar
One of battery.Core absorbed layer of the copper indium gallium selenide as battery, preparation process are to obtain the high-performance CIGS thin-film sun
The most crucial technology of energy battery component.
Coevaporation method is to prepare one of the main stream approach of high quality CIGS thin-film.Coevaporation method prepares copper and indium gallium
The technique of selenium film, which refers to, to be made four kinds of copper, indium, gallium, selenium material melts and is evaporated in the way of resistance heating, is evaporated
The four kinds of particles come generate the technical process of CIGS thin-film in the substrate surface deposition reaction for being coated with metal molybdenum layer.It is several recently
Year, alkali metal aftertreatment technology is introduced, the substrate for being coated with CIGS thin-film is handled, improves CIGS thin-film too
The transfer efficiency of positive energy battery.However in copper-indium-galliun-selenium film solar cell component industrialization production, only use at present
Single alkali metal post-processes CIGS thin-film, and it is special to the processing of copper indium gallium selenide film layer to have ignored different alkali metal
Point and the otherness for promoting effect to the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell influence.
Summary of the invention
It is an object of the invention to overcome in the prior art CIGS thin-film in alkali metal aftertreatment technology using single
The limitation of one alkali metal, while to the problem of the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell difference, to provide
A kind of thin-film solar cells coating apparatus and its film plating process.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
A kind of thin-film solar cells coating apparatus, including alkali metal processing chamber and the base for being plated with CIGS thin-film
Plate, the alkali metal processing chamber include: at least two alkali-metal evaporation sources and alkali metal controller；
Wherein, the alkali metal controller is connect at least two alkali-metal evaporation source, for according to preset alkali
Metal-doped parameter controls the switch state of the alkali-metal evaporation source and its in the indoor position of alkali metal process cavity.
Optionally, every kind of alkali-metal evaporation source includes that at least a pair of alkali metal containing same alkali metal element steams
It rises；Two alkali-metal evaporation sources in each pair of alkali-metal evaporation source are symmetrically distributed in the two sides of the alkali metal processing chamber,
The substrate moves between each pair of alkali-metal evaporation source.
Optionally, the alkali metal controller includes:
Switch control unit is connect at least two alkali-metal evaporation source, for according to preset alkali-metal-doped
Parameter controls the switch state of each alkali-metal evaporation source respectively；
Position control unit is connect at least two alkali-metal evaporation source, for according to preset alkali-metal-doped
Parameter controls each alkali-metal evaporation source in the indoor position of alkali metal process cavity respectively；And
The alkali metal controller further include:
Power control unit is connect at least two alkali-metal evaporation source, for according to preset alkali-metal-doped
Parameter controls the evaporation power of each alkali-metal evaporation source respectively.
Optionally, the alkali metal processing chamber includes:
Evaporation rate monitor is connect with the alkali metal controller, for monitoring each alkali metal evaporation respectively
The evaporation rate in source, and monitored results are exported to the alkali metal controller；
Correspondingly, the alkali metal controller adjusts the steaming of the corresponding alkali-metal evaporation source according to the monitored results
Send out power.
Optionally, the alkali metal controller includes:
Substrate temperature control unit adds with the corresponding substrate of evaporation region of at least two alkali-metal evaporation source
Thermal connection, for controlling the heating temperature of each substrate heating equipment respectively according to preset alkali-metal-doped parameter
Degree, to control substrate temperature when evaporation region of the substrate by the alkali-metal evaporation source respectively.
Optionally, the alkali-metal evaporation source is potassium fluoride evaporation source, rubidium fluoride RbF evaporation source or cesium fluoride evaporation source.
The present invention also provides a kind of thin-film solar cells film plating process, include the following steps:
According to preset alkali-metal-doped parameter, at least two alkali-metal evaporation sources is opened in control alkali metal processing chamber
Off status and its in the indoor position of alkali metal process cavity；
The substrate for being plated with CIGS thin-film is mobile by the alkali metal processing chamber, it is heavy to complete alkali-metal-doped
Product.
Optionally, every kind of alkali-metal evaporation source includes that at least a pair of alkali metal containing same alkali metal element steams
It rises；Two alkali-metal evaporation sources in each pair of alkali-metal evaporation source are symmetrically distributed in the two sides of the alkali metal processing chamber,
The substrate moves between each pair of alkali-metal evaporation source.
Optionally, before the substrate movement that will be plated with CIGS thin-film passes through the alkali metal processing chamber,
The thin-film solar cells film plating process further include:
According to the alkali-metal-doped parameter, the evaporation power of each alkali-metal evaporation source is controlled respectively.
Optionally, the thin-film solar cells film plating process further include:
The monitored results that evaporation rate monitor monitors respectively in the alkali metal processing chamber are received, and according to the prison
Result and the alkali-metal-doped parameter are controlled, the evaporation power of the corresponding alkali-metal evaporation source is adjusted；
Wherein, the monitored results include the evaporation rate of each alkali-metal evaporation source.
Optionally, the thin-film solar cells film plating process further include:
According to preset alkali-metal-doped parameter, the heating temperature of each substrate heating equipment is controlled respectively, to divide
Substrate temperature when evaporation region of the substrate by the alkali-metal evaporation source is not controlled.
Optionally, the alkali-metal evaporation source is potassium fluoride evaporation source, rubidium fluoride RbF evaporation source or cesium fluoride evaporation source.
Beneficial effects of the present invention:
Thin-film solar cells coating apparatus and film plating process provided by the invention are evaporated by introducing a variety of alkali metal
Source, and the switch state of the alkali-metal evaporation source is controlled according to preset alkali-metal-doped parameter by alkali metal controller
And its in the indoor position of alkali metal process cavity, to realize the differences such as the type of a variety of alkali-metal evaporation sources, sequence
Collocation, using different alkali metal elements to the otherness of the treatment effect of copper indium gallium selenide film layer, Lai Gaishan CIGS thin-film
Can, effectively improve the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is alkali metal processing chamber structural schematic diagram of the present invention.
Fig. 2 is alkali metal controller architecture schematic diagram.
1, alkali metal processing chamber, 2, alkali metal controller, 3, alkali-metal evaporation source, 4, switch control unit, 5, position
Control unit, 6, power control unit, 7, evaporation rate monitor, 8, substrate.
Specific embodiment
There is provided following embodiments is to preferably further understand the present invention, it is not limited to the best embodiment party
Formula is not construed as limiting the contents of the present invention and protection scope, anyone under the inspiration of the present invention or by the present invention and its
The feature of his prior art is combined and any and identical or similar product of the present invention for obtaining, all falls within of the invention
Within protection scope.
Specific experiment step or condition person are not specified in embodiment, according to the literature in the art described routine experiment
The operation of step or condition can carry out.Reagents or instruments used without specified manufacturer, being can be by commercially available acquisition
Conventional reagent product.
The present invention provides a kind of thin-film solar cells coating apparatus, including alkali metal processing chamber 1 and is plated with copper and indium
The substrate 8 of gallium selenium film, as shown in Figure 1, alkali metal processing chamber 1 includes: at least two alkali-metal evaporation sources 3 and alkali metal control
Device 2 processed.
Wherein, the alkali metal controller 2 is connect at least two alkali-metal evaporation source 3, for according to preset
Alkali-metal-doped parameter, the switch state for controlling the alkali-metal evaporation source 3 and its position in the alkali metal processing chamber 1
It sets.Alkali-metal evaporation source not of the same race contains different types of alkali metal element.
Wherein, preset alkali-metal-doped parameter is that pre-set doping needs those skilled in the art according to actual needs
It asks, for example, dopant species, the specific requirements such as doping-sequence, alkali metal controller 2 divide according to preset alkali-metal-doped parameter
Not Kong Zhi the switch state of each alkali-metal evaporation source 3 and position in alkali metal processing chamber 1, have reached doping demand.
Coating apparatus provided in an embodiment of the present invention is controlled by introducing a variety of alkali-metal evaporation sources 3, and by alkali metal
Device 2 controls the switch state of the alkali-metal evaporation source 3 and its in the alkali metal work according to preset alkali-metal-doped parameter
Position in skill chamber 1, to realize the different collocation such as type, sequence of a variety of alkali-metal evaporation sources 3.Utilize different alkali gold
Belong to element to the otherness of the treatment effect of copper indium gallium selenide film layer, Lai Gaishan CIGS thin-film performance effectively improves copper and indium gallium
The photoelectric conversion efficiency of selenium thin-film solar cells.
In some embodiments of the present invention, every kind of alkali-metal evaporation source may include that at least a pair contains same alkali metal
The alkali-metal evaporation source of element；And two alkali-metal evaporation sources 3 in each pair of alkali-metal evaporation source are symmetrically distributed in alkali metal work
The two sides of skill chamber 1, substrate move between each pair of alkali-metal evaporation source 3.
In some embodiments of the present invention, the alkali-metal evaporation source can use but be not limited to potassium fluoride evaporation source, fluorine
Change rubidium evaporation source or cesium fluoride evaporation source.
In some embodiments of the present invention, the alkali metal controller 2 may include:
Switch control unit 4 is connect at least two alkali-metal evaporation source 3, for being mixed according to preset alkali metal
Miscellaneous parameter controls the switch state of each alkali-metal evaporation source 3 respectively.
Position control unit 5 is connect at least two alkali-metal evaporation source 3, for being mixed according to preset alkali metal
Miscellaneous parameter controls position of each alkali-metal evaporation source 3 in the alkali metal processing chamber 1 respectively.
The control of the type of alkali metal can be realized by switch control unit 4, for example, closing potassium fluoride evaporation source, opened
Rubidium fluoride RbF evaporation source and cesium fluoride evaporation source；Or cesium fluoride evaporation source is closed, open rubidium fluoride RbF evaporation source and potassium fluoride evaporation source
Deng.The sequence of alkali metal and the control of deposition fraction can be realized by position control unit 5, for example, first depositing fluorinated caesium, rear heavy
Product rubidium fluoride RbF；Alternatively, depositing fluorinated caesium etc. again after depositing fluorinated caesium, rubidium fluoride RbF.
In some embodiments of the present invention, the alkali metal controller 2 further include:
Power control unit 6 is connect at least two alkali-metal evaporation source 3, for being mixed according to preset alkali metal
Miscellaneous parameter controls the evaporation power of each alkali-metal evaporation source 3 respectively.Pass through the evaporation power of alkali-metal evaporation source 3
The control, it can be achieved that evaporation rate of alkali-metal evaporation source 3 is controlled, so that the control of the deposition thickness of different alkali metal is controlled,
To reach different alkali metal treated effects, improve CIGS thin-film performance.
In some embodiments of the present invention, the alkali metal processing chamber 1 includes:
Evaporation rate monitor 7 is connect with the alkali metal controller 2, is steamed for monitoring each alkali metal respectively
Rise 3 evaporation rate, and monitored results are exported to the alkali metal controller 2.
Correspondingly, the alkali metal controller 2 adjusts the corresponding alkali-metal evaporation source 3 according to the monitored results
Evaporation power.By setting evaporation rate monitor 7, the evaporation power of alkali-metal evaporation source 3 effectively can be accurately controlled, thus
The evaporation rate of alkali metal is accurately controlled, to control the deposition thickness of alkali metal, further improves CIGS thin-film performance.
In some embodiments of the present invention, the alkali metal controller 2 includes:
Substrate temperature control unit, the corresponding substrate of evaporation region at least two alkali-metal evaporation source 3
Heating device connection, for controlling the heating of each substrate heating equipment respectively according to preset alkali-metal-doped parameter
Temperature, to control substrate temperature when evaporation region of the substrate by the alkali-metal evaporation source 3 respectively.It is set by above-mentioned
It sets and ensure that substrate temperature is uniform, be conducive to the uniformity of alkali metal deposition thickness.
In some embodiments of the present invention, the alkali-metal evaporation source 3 is potassium fluoride evaporation source, rubidium fluoride RbF evaporation source or fluorine
Change caesium evaporation source.
In some embodiments of the present invention, the length of the alkali metal processing chamber 1 is not specifically limited.Optionally, exist
In some embodiments of the present invention, the length of alkali metal processing chamber 1 can be increased, while increasing the number of alkali-metal evaporation source 3
Amount；Or on the basis of not increasing alkali metal 1 length of processing chamber, in limited processing chamber length, increase alkali metal
The quantity of evaporation source 3；Or on the basis of not changing alkali metal 1 length of processing chamber, increase the number of alkali metal processing chamber 1
Amount, to realize identical function.
Based on above-mentioned coating apparatus, the embodiment of the invention also provides a kind of thin-film solar cells film plating process, including
Following steps:
According to preset alkali-metal-doped parameter, at least two alkali-metal evaporation sources 3 in alkali metal processing chamber 1 are controlled
Switch state and its position in the alkali metal processing chamber 1；
The substrate for being plated with CIGS thin-film is mobile by the alkali metal processing chamber 1, complete alkali-metal-doped
Deposition.
In some embodiments of the present invention, every kind of alkali-metal evaporation source includes that at least a pair contains same alkali metal
The alkali-metal evaporation source of element；Two alkali-metal evaporation sources 3 in each pair of alkali-metal evaporation source 3 are symmetrically distributed in the alkali metal
The two sides of processing chamber 1, the substrate move between each pair of alkali-metal evaporation source 3.
In some embodiments of the present invention, the substrate that will be plated with CIGS thin-film is mobile by the alkali metal
Before processing chamber 1, the thin-film solar cells film plating process further include:
According to the alkali-metal-doped parameter, the evaporation power of each alkali-metal evaporation source 3 is controlled respectively.
The thin-film solar cells film plating process provided through the embodiment of the present invention, by alkali metal controller 2 according to pre-
If alkali-metal-doped parameter, control the switch state of the alkali-metal evaporation source 3 and its in the alkali metal processing chamber 1
Position, to CIGS thin-film carry out alkali metal element doping deposition, the superficial film defect of CIGS thin-film can be passivated,
The poor copper of 30-50nm, the copper indium gallium selenide thin layer of poor gallium are formed on CIGS thin-film surface, is conducive to subsequent cadmium ion and enters copper
Indium gallium selenium film surface layer is conducive to the coverage rate for improving cadmium sulfide and improves copper indium gallium selenide/cadmium sulfide interface.Meanwhile passing through alkali
Metal controller 2 regulates and controls the type and doping-sequence of alkali metal, optimizes alkali metal treated effect, improves CIGS thin-film
Performance effectively increases the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell.
In some embodiments of the present invention, at least two alkali-metal evaporation sources 3 are equipped in the alkali metal processing chamber 1,
It include at least a pair of alkali-metal evaporation source for containing same alkali metal element in every kind of alkali-metal evaporation source 3.
In some embodiments of the present invention, the alkali metal element is sodium element, potassium element, rubidium element or cesium element.
In some embodiments of the present invention, the alkali metal element exists in the form of alkali halide.
In some embodiments of the present invention, the alkali metal is controlled by the power control unit 6 of alkali metal controller 2 and is steamed
Rise 3 heating power be 700-1100W.By the position control unit 5, the alkali-metal evaporation source 3 is controlled described
Position in alkali metal processing chamber 1.
In some embodiments of the present invention, three pairs of alkali-metal evaporation sources 3 are equipped in the alkali metal processing chamber 1, along base
The moving direction of plate controls three pairs of alkali-metal evaporation sources 3 by the position control unit 5 and is followed successively by potassium fluoride evaporation
Source, rubidium fluoride RbF evaporation source and cesium fluoride evaporation source.Potassium fluoride evaporation is controlled by the power control unit 6 of alkali metal controller 2
The heating power in source is 800-1100W, and the heating power of rubidium fluoride RbF evaporation source is 700-1000W, the heating of cesium fluoride evaporation source
Power is 700-1000W.By each control unit in alkali metal controller 2, regulates and controls the doping of alkali metal respectively and mix
Miscellaneous sequence optimizes alkali metal treated effect, improves CIGS thin-film performance, effectively increases the CIGS thin-film sun
The photoelectric conversion efficiency of energy battery.
In some embodiments of the invention, three pairs of alkali-metal evaporation sources 3, edge are equipped in the alkali metal processing chamber 1
The moving direction of substrate controls three pairs of alkali-metal evaporation sources 3 by the position control unit 5 and is followed successively by rubidium fluoride RbF evaporation
Source, cesium fluoride evaporation source and potassium fluoride evaporation source.Rubidium fluoride RbF evaporation is controlled by the power control unit 6 of alkali metal controller 2
The heating power in source is 800-1100W, and the heating power of cesium fluoride evaporation source is 700-1000W, the heating of potassium fluoride evaporation source
Power is 700-1000W.
Optionally, the thin-film solar cells film plating process further include:
The monitored results that evaporation rate monitor 7 monitors respectively in the alkali metal processing chamber 1 are received, and according to described
Monitored results and the alkali-metal-doped parameter adjust the evaporation power of the corresponding alkali-metal evaporation source 3；
Wherein, the monitored results include the evaporation rate of each alkali-metal evaporation source 3.Optionally, the evaporation
Rate monitor 7 is quartz crystal film thickness detector, can be carried out to alkali metal evaporation rate by quartz crystal film thickness detector
Real time monitoring, to accurately control the evaporation rate of alkali metal.
Optionally, the thin-film solar cells film plating process further include:
According to preset alkali-metal-doped parameter, the heating temperature of each substrate heating equipment is controlled respectively, to divide
Substrate temperature when evaporation region of the substrate by the alkali-metal evaporation source 3 is not controlled.Optionally, pass through substrate temperature
The temperature of control unit control base board is 300-400 DEG C.
Optionally, the alkali-metal evaporation source 3 is potassium fluoride evaporation source, rubidium fluoride RbF evaporation source or cesium fluoride evaporation source.
Optionally, the rate that the substrate passes through the alkali metal processing chamber 1 is 30-40cm/min.
The present invention passes through the heating power for adjusting different alkali-metal evaporation sources 3 and substrate temperature and substrate motion rate,
Different alkali metal can be regulated and controled to the treatment effect of the copper indium gallium selenide film film by alkali metal processing chamber 1, reached controllably
Improve the purpose of copper indium gallium selenide film performance.
Optionally, the substrate for being plated with CIGS thin-film is pre- by the way that the substrate for being coated with metal molybdenum layer to be heated to
If after technological temperature, being transferred to copper indium gallium selenide coating chamber and carrying out plated film, obtain the substrate for being plated with CIGS thin-film.
Optionally, the predetermined process temperature is 400-550 DEG C.
Optionally, it is described be plated with CIGS thin-film on the substrate of CIGS thin-film with a thickness of 1.5-3 μm.
Optionally, include the steps that 100-200 DEG C or less will be cooled to by the substrate behind the alkali metal treated area.
In the present invention, in entire alkali metal treated technical process, the movement rate of substrate can be at the uniform velocity or it is non-at the uniform velocity,
The heating power of the alkali-metal evaporation source 3 is the evaporation power of alkali-metal evaporation source 3.
It will illustrate the solution of the present invention below with different embodiment.
Embodiment one:
The present embodiment provides a kind of thin-film solar cells film plating process, include the following steps:
1) after the substrate for being coated with metal molybdenum layer to be heated to 400 DEG C of predetermined process temperature, it is transferred to copper indium gallium selenide plated film
Chamber carries out plated film using coevaporation method, obtains the substrate for being plated with CIGS thin-film (thicknesses of layers is 1.5 μm), will plate
The board transport for being covered with CIGS thin-film cools down to a controllable cooling chamber to reach alkali metal process temperature
Degree.
2) 350 DEG C are reduced to substrate temperature, it is subjected to alkali metal element doping by alkali metal processing chamber 1 and is sunk
Product.For the substrate in the transmission process of alkali metal processing chamber 1, surface can deposit different alkali metal successively, deposit on one side
It reacts on one side.
The alkali metal processing chamber 1 is equipped with 3 pairs of alkali-metal evaporation sources 3, two alkali in each pair of alkali-metal evaporation source 3
Metal evaporation sources are symmetrically distributed in the two sides of the alkali metal processing chamber 1, and the substrate is between each pair of alkali-metal evaporation source 3
It is mobile, by the position control unit 5 of alkali metal controller 2, along the direction of motion of substrate, set gradually as first pair of alkali metal
To alkali-metal evaporation source, first pair of alkali-metal evaporation source is interior to fill fluorine for evaporation source, second pair of alkali-metal evaporation source and third
Change potassium, fill rubidium fluoride RbF in second pair of alkali-metal evaporation source, the third is to filling cesium fluoride in alkali-metal evaporation source；It is logical
Quartz crystal film thickness detector is crossed to monitor alkali metal evaporation rate in real time；
It is controlled by the power control unit 6 of alkali metal controller 2:
The heating power of first pair of alkali-metal evaporation source 3 is 1100W；
The heating power of second pair of alkali-metal evaporation source 3 is 700W；
The third is 700W to the heating power of alkali-metal evaporation source 3；
It is 300 DEG C by the temperature that substrate temperature control unit controls the substrate；
The rate that the substrate passes through alkali metal processing chamber 1 is 30cm/min.
3) start to cool down after substrate is by alkali metal processing chamber 1, after temperature is down to 200 DEG C, terminate copper indium gallium selenide film
The preparation of layer, obtains copper indium gallium selenide film layer.
After tested, the copper indium gallium selenide film layer that method is handled through this embodiment, it is middle using single compared with the prior art
One alkali metal is doped the copper indium gallium selenide film layer that deposition processes obtain to CIGS thin-film, and (method in the prior art is same as above
It states embodiment and is only that the alkali metal processing chamber is equipped with 1 pair of alkali-metal evaporation source compared to its difference, the alkali metal steams
Rise interior filling potassium fluoride), finally make the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell improve 0.3%.
Embodiment two:
The present embodiment provides a kind of thin-film solar cells film plating process, include the following steps:
1) after the substrate for being coated with metal molybdenum layer being heated to 550 DEG C of predetermined process temperature, it is transferred to copper indium gallium selenide plating membrane cavity
Room carries out plated film using coevaporation method, obtains the substrate for being plated with CIGS thin-film (thicknesses of layers is 3 μm), will be plated with
The board transport of CIGS thin-film cools down to a controllable cooling chamber to reach alkali metal process temperature.
2) after substrate temperature is reduced to 400 DEG C, it is subjected to alkali metal element doping by alkali metal processing chamber 1 and is sunk
Product.For the substrate in the transmission process of alkali metal processing chamber 1, surface can deposit different alkali metal successively, deposit on one side
It reacts on one side.
The alkali metal processing chamber 1 is equipped with 3 pairs of alkali-metal evaporation sources 3, two alkali in each pair of alkali-metal evaporation source 3
Metal evaporation sources are symmetrically distributed in the two sides of the alkali metal processing chamber 1, and the substrate is between each pair of alkali-metal evaporation source 3
It is mobile, by the position control unit 5 of alkali metal controller 2, along the direction of motion of substrate, set gradually as first pair of alkali metal
To alkali-metal evaporation source, first pair of alkali-metal evaporation source is interior to fill fluorine for evaporation source, second pair of alkali-metal evaporation source and third
Change potassium, fill rubidium fluoride RbF in second pair of alkali-metal evaporation source, the third is to filling cesium fluoride in alkali-metal evaporation source；
It is controlled by the power control unit 6 of alkali metal controller 2:
The heating power of first pair of alkali-metal evaporation source 3 is 800W；
The heating power of second pair of alkali-metal evaporation source 3 is 800W；
The third is 1000W to the heating power of alkali-metal evaporation source 3；
It is 400 DEG C by the temperature that substrate temperature control unit controls the substrate；
The rate that the substrate passes through alkali metal processing chamber 1 is 40cm/min.
3) start to cool down after substrate is by alkali metal processing chamber 1, after temperature is down to 100 DEG C, terminate copper indium gallium selenide film
The preparation of layer, obtains copper indium gallium selenide film layer.
After tested, the copper indium gallium selenide film layer that method is handled through this embodiment, it is middle using single compared with the prior art
One alkali metal is doped the copper indium gallium selenide film layer that deposition processes obtain to CIGS thin-film, and (method in the prior art is same as above
It states embodiment and is only that the alkali metal processing chamber is equipped with 1 pair of alkali-metal evaporation source compared to its difference, the alkali metal steams
Rise interior filling potassium fluoride), finally make the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell improve 0.5%.
Embodiment three:
The present embodiment provides a kind of thin-film solar cells film plating process, include the following steps:
1) after the substrate for being coated with metal molybdenum layer being heated to 500 DEG C of predetermined process temperature, it is transferred to copper indium gallium selenide plating membrane cavity
Room carries out plated film using coevaporation method, obtains the substrate for being plated with CIGS thin-film (thicknesses of layers is 2 μm), will be plated with
The board transport of CIGS thin-film cools down to a controllable cooling chamber to reach alkali metal process temperature.
2) after substrate temperature is reduced to 380 DEG C, it is subjected to alkali metal element doping by alkali metal processing chamber 1 and is sunk
Product.For the substrate in the transmission process of alkali metal processing chamber 1, surface can deposit different alkali metal successively, deposit on one side
It reacts on one side.
The alkali metal processing chamber 1 is equipped with 3 pairs of alkali-metal evaporation sources 3, two alkali in each pair of alkali-metal evaporation source 3
Metal evaporation sources are symmetrically distributed in the two sides of the alkali metal processing chamber 1, and the substrate is between each pair of alkali-metal evaporation source 3
It is mobile, by the position control unit 5 of alkali metal controller 2, along the direction of motion of substrate, set gradually as first pair of alkali metal
To alkali-metal evaporation source, first pair of alkali-metal evaporation source is interior to fill fluorine for evaporation source, second pair of alkali-metal evaporation source and third
Change potassium, fill rubidium fluoride RbF in second pair of alkali-metal evaporation source, the third is to filling cesium fluoride in alkali-metal evaporation source；
It is controlled by the power control unit 6 of alkali metal controller 2:
The heating power of first pair of alkali-metal evaporation source 3 is 800W；
The heating power of second pair of alkali-metal evaporation source 3 is 1000W；
The third is 750W to the heating power of alkali-metal evaporation source 3；
It is 380 DEG C by the temperature that substrate temperature control unit controls the substrate；The substrate passes through alkali metal technique
The rate of chamber 1 is 35cm/min；
3) start to cool down after substrate is by alkali metal processing chamber 1, after temperature is down to 100 DEG C, terminate copper indium gallium selenide film
The preparation of layer, obtains copper indium gallium selenide film layer.
After tested, the copper indium gallium selenide film layer that method is handled through this embodiment, it is middle using single compared with the prior art
One alkali metal is doped the copper indium gallium selenide film layer that deposition processes obtain to CIGS thin-film, and (method in the prior art is same as above
It states embodiment and is only that the alkali metal processing chamber is equipped with 1 pair of alkali-metal evaporation source compared to its difference, the alkali metal steams
Rise interior filling potassium fluoride), finally make the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell improve 0.4%.
Example IV:
It is compared with embodiment three, difference, which is only that in first pair of alkali-metal evaporation source 3, fills rubidium fluoride RbF, and described the
Fill cesium fluoride in two pairs of alkali-metal evaporation sources 3, the third is to filling potassium fluoride in alkali-metal evaporation source 3.
After tested, the copper indium gallium selenide film layer that method is handled through this embodiment, it is middle using single compared with the prior art
One alkali metal is doped the copper indium gallium selenide film layer that deposition processes obtain to CIGS thin-film, and (method in the prior art is same as above
It states embodiment and is only that the alkali metal processing chamber is equipped with 1 pair of alkali-metal evaporation source compared to its difference, the alkali metal steams
Rise interior filling potassium fluoride), finally make the photoelectric conversion efficiency of copper-indium-galliun-selenium film solar cell improve 0.45%.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of thin-film solar cells coating apparatus, including alkali metal processing chamber and the base for being plated with CIGS thin-film
Plate, which is characterized in that the alkali metal processing chamber includes: at least two alkali-metal evaporation sources and alkali metal controller；
Wherein, the alkali metal controller is connect at least two alkali-metal evaporation source, for according to preset alkali metal
Doping parameters control the switch state of the alkali-metal evaporation source and its in the indoor position of alkali metal process cavity.
2. thin-film solar cells coating apparatus according to claim 1, which is characterized in that every kind of alkali metal evaporation
Source includes at least a pair of alkali-metal evaporation source for containing same alkali metal element；Two alkali gold in each pair of alkali-metal evaporation source
Belong to the two sides that evaporation source is symmetrically distributed in the alkali metal processing chamber, the substrate is between each pair of alkali-metal evaporation source
It is mobile.
3. thin-film solar cells coating apparatus according to claim 1, which is characterized in that the alkali metal controller packet
It includes:
Switch control unit is connect at least two alkali-metal evaporation source, is used for according to preset alkali-metal-doped parameter,
The switch state of each alkali-metal evaporation source is controlled respectively；
Position control unit is connect at least two alkali-metal evaporation source, is used for according to preset alkali-metal-doped parameter,
Each alkali-metal evaporation source is controlled respectively in the indoor position of alkali metal process cavity；And
The alkali metal controller further include:
Power control unit is connect at least two alkali-metal evaporation source, is used for according to preset alkali-metal-doped parameter,
The evaporation power of each alkali-metal evaporation source is controlled respectively.
4. thin-film solar cells coating apparatus according to claim 1, which is characterized in that the alkali metal process cavity
Room includes:
Evaporation rate monitor is connect with the alkali metal controller, for monitoring each alkali-metal evaporation source respectively
Evaporation rate, and monitored results are exported to the alkali metal controller；
Correspondingly, the alkali metal controller adjusts the evaporation function of the corresponding alkali-metal evaporation source according to the monitored results
Rate.
5. thin-film solar cells coating apparatus according to claim 1, which is characterized in that the alkali metal controller packet
It includes:
Substrate temperature control unit, the corresponding substrate heating of evaporation region at least two alkali-metal evaporation source fill
Connection is set, for controlling the heating temperature of each substrate heating equipment respectively according to preset alkali-metal-doped parameter, with
Substrate temperature when evaporation region of the substrate by the alkali-metal evaporation source is controlled respectively.
6. thin-film solar cells coating apparatus described in -5 any one according to claim 1, which is characterized in that the alkali gold
Category evaporation source is potassium fluoride evaporation source, rubidium fluoride RbF evaporation source or cesium fluoride evaporation source.
7. a kind of thin-film solar cells film plating process, which comprises the steps of:
According to preset alkali-metal-doped parameter, the switch shape of at least two alkali-metal evaporation sources in alkali metal processing chamber is controlled
State and its in the indoor position of alkali metal process cavity；
The substrate for being plated with CIGS thin-film is mobile by the alkali metal processing chamber, complete alkali-metal-doped deposition.
8. thin-film solar cells film plating process according to claim 7, which is characterized in that every kind of alkali metal evaporation
Source includes at least a pair of alkali-metal evaporation source for containing same alkali metal element；Two alkali gold in each pair of alkali-metal evaporation source
Belong to the two sides that evaporation source is symmetrically distributed in the alkali metal processing chamber, the substrate moves between each pair of alkali-metal evaporation source
It is dynamic.
9. thin-film solar cells film plating process according to claim 7, which is characterized in that described to be plated with copper and indium gallium
The substrate of selenium film is mobile by before the alkali metal processing chamber, further includes:
According to the alkali-metal-doped parameter, the evaporation power of each alkali-metal evaporation source is controlled respectively；
And/or the monitored results that evaporation rate monitor monitors respectively in the alkali metal processing chamber are received, and according to described
Monitored results and the alkali-metal-doped parameter adjust the evaporation power of the corresponding alkali-metal evaporation source；Wherein, the prison
Control result includes the evaporation rate of each alkali-metal evaporation source；
And/or according to preset alkali-metal-doped parameter, the heating temperature of each substrate heating equipment is controlled respectively, with
Substrate temperature when evaporation region of the substrate by the alkali-metal evaporation source is controlled respectively.
10. thin-film solar cells film plating process according to claim 7, which is characterized in that the alkali-metal evaporation source
For potassium fluoride evaporation source, rubidium fluoride RbF evaporation source or cesium fluoride evaporation source.
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