CN105810764B - A kind of preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer - Google Patents
A kind of preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer Download PDFInfo
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- CN105810764B CN105810764B CN201610410939.4A CN201610410939A CN105810764B CN 105810764 B CN105810764 B CN 105810764B CN 201610410939 A CN201610410939 A CN 201610410939A CN 105810764 B CN105810764 B CN 105810764B
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- copper
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- gallium
- selenium
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- 239000011669 selenium Substances 0.000 title claims abstract description 41
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 15
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000010408 film Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 41
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910000807 Ga alloy Inorganic materials 0.000 claims abstract description 26
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 21
- 229910052738 indium Inorganic materials 0.000 claims abstract description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 22
- 229940065287 selenium compound Drugs 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000010549 co-Evaporation Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910001370 Se alloy Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 210000003850 cellular structure Anatomy 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 231100000004 severe toxicity Toxicity 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer, its basic step is followed successively by order：1）One layer of copper gallium alloy film is deposited with the method for physical vacuum sputter-deposited thin films.2）By above-mentioned copper gallium film in the selenium steam ambient of vacuum vapor plating selenization.3）On film after selenization indium and selenium element are deposited with vacuum co-evaporation.4）Finally deposit a small amount of gallium on above-mentioned film to adjust the electric property of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer with vacuum vapor deposition method.
Description
Technical field
The present invention relates to the preparation method that a kind of solar cell photoelectric absorbs conversion layer.
Background technology
Copper-indium-galliun-selenium film solar cell is a kind of efficient thin-film solar cell, the photoelectric absorption of the solar cell
The compound semiconductor film that conversion layer is made up of copper, indium, four kinds of elements of gallium and selenium, it is existing to prepare the solar cell photoelectric
The method for absorbing conversion layer has coevaporation method and sputtering and selenization technique method two ways.
The method that coevaporation method prepares copper-indium-gallium-selenium compound semiconductive thin film is：By copper, indium, gallium, four kinds of solids of selenium
Matter is individually positioned in each independent evaporation source, each independent evaporation source be heated separately can make to be placed on it is therein
Solid matter is melted on the temperature of liquid, wherein the evaporation source for placing copper needs to be heated to 1300 DEG C to 1400 DEG C, is placed
The evaporation source of indium needs to be heated to 1000 DEG C to 1100 DEG C, and the evaporation source for placing gallium needs to be heated to 1150 DEG C to 1250 DEG C, puts
Putting the evaporation source of selenium needs to be heated to 300 DEG C to 350 DEG C, after each independent evaporation source reaches the respective temperature of the above, puts
The solid matter put wherein is melted into the liquid of molten condition and produces the steam containing respective element, the steam of various elements to exist
Reach in vacuum chamber and be heated to 500 DEG C~600 DEG C of substrate surface and attached thereto, various elements are in substrate surface
It is upper to chemically react, ultimately form copper-indium-gallium-selenium compound semiconductive thin film.The advantage of coevaporation method is：Prepared film
One step is completed, and raw materials cost is relatively low；Copper, indium, gallium, the proportioning of four kinds of elements of selenium and graded elemental concentrations can be controlled accurately
System.The deficiency of coevaporation method is：The evaporating temperature of three kinds of metallic elements especially copper is too high, and the design of evaporation source is complicated, manufacture
It is difficult；Due to copper, indium, gallium evaporating temperature is all more than 1000 degrees Celsius and temperature difference is larger, thus different evaporation source
Between easily interfere, cause technology controlling and process and device structure design difficulty further increase.
The method that sputtering and selenization technique method prepares copper-indium-gallium-selenium compound semiconductive thin film be under vacuum conditions by copper, indium,
The method sputter of three kinds of element magnetron sputterings of gallium to the alloy firm that copper and indium gallium is formed in deposition substrate, then by deposition substrate
And its on the copper and indium gallium alloy film that deposits be put into 400 DEG C~500 DEG C of H2Se（Hydrogen selenide）Or Se（Selenium）Selenizing in steam
Treatment 30 to 60 minutes, obtains copper-indium-gallium-selenium compound semiconductive thin film after selenizing.Sputtering and selenization technique method prepares CIGS
The advantage of compound semiconductive thin film is：Equipment is simple, easily extensive manufacture.Its deficiency is：Target needed for thin film deposition
It is expensive；Selenization process generally requires the hydrogen selenide gas for using severe toxicity, easily to human body and environmental pollution, and to the technique
Control it is extremely complex, further raised the manufacturing cost of copper-indium-galliun-selenium film solar cell.
The content of the invention
It is an object of the invention to provide a kind of preparation side of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer
Method, the method combines vacuum evaporatation and sputter coating method, prepares copper-indium-galliun-selenium film solar cell opto-electronic conversion
Absorbed layer.
To achieve the above object, the present invention uses following scheme：
1st, a kind of preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer, it is characterised in that with
Lower step：
A) one layer of 0.2 ~ 2.5 copper gallium alloy film of μ m-thick, is sputtered on substrate with the method for vacuum sputtering；
B) substrate that, will sputter copper gallium alloy film is positioned in 500 ~ 600 DEG C of the environment rich in selenium steam to copper
Gallium alloy film carries out selenization；
C), the substrate after selenization is placed on and is provided with the coevaporation vacuum chamber of indium evaporation source and selenium evaporation source,
By on indium and selenium hydatogenesis to copper gallium alloy film at 500 ~ 600 DEG C, copper-indium-gallium-selenium compound semiconductive thin film is formed；
D), the copper-indium-gallium-selenium compound semiconductive thin film by substrate and thereon is placed into the vacuum for being provided with gallium evaporation source
In evaporation cavity room, a small amount of gallium is deposited to copper-indium-gallium-selenium compound semiconductive thin film.
In addition, as the preferred of copper-indium-galliun-selenium film solar cell component is made, in above-mentioned a）Step copper gallium alloy is thin
After film is formed, copper gallium alloy film and the substrate surface being in contact with it are delineated together with the method for laser scribing, to plan
Each sub- solar cell of sunny energy battery.
Using above scheme prepare photoelectric absorption conversion layer good effect be：
1st, above-mentioned a) step utilizes sputtering vacuum deposition copper gallium alloy film, for copper-indium-gallium-selenium alloy film provides copper gallium
Element, make later use coevaporation method only to evaporate indium, gallium and selenium element, it is to avoid the evaporation of copper, so as to avoid steaming
Technique and equipment complexity that hair copper is brought.
2nd, it is above-mentioned b), c) step in selenium steam ambient selenization copper gallium alloy film and deposition indium, the side of gallium element
The advantage that method prepares the method for CIGS thin-film relative to sputtering and selenization technique method is, in copper-indium-gallium-selenium alloy film
Copper, indium, the atomicity ratio of four kinds of elements of gallium and selenium are easier to precise control, and needed for being obtained by the regulation of technique not
The copper-indium-gallium-selenium alloy film of homoatomic concentration distribution.
The inventive method rationally, beneficial to large-scale production, given full play to coevaporation method prepare copper indium gallium selenium solar electricity
Pond can precise control element ratio so as to obtain more high conversion efficiency and the simple advantage of sputtering method device structure, the present invention
Can convenient utilization and extention aborning, obtain the copper-indium-galliun-selenium film solar cell product of high performance-price ratio.
Brief description of the drawings
Fig. 1 is the procedure of processing schematic diagram of one embodiment of the invention.
Specific embodiment
With reference to embodiments and accompanying drawing further illustrates the present invention.
Embodiment
First from the substrate shown in Fig. 1, the substrate includes a piece of board-like material 01 for possessing flat surface, and in plate
One layer of molybdenum film 02 of shape deposited on materials.Used as the preferred of manufacture thin-film solar cells, board-like material 01 can be flat board
Glass or treated stainless steel plate or treated polyimide plate.Above-described substrate is a kind of existing structure.
After the completion of substrate selection, carry out that step is implemented as follows：
1st, one layer of 0.2 ~ 2.5 copper gallium alloy film of μ m-thick is sputtered on substrate with the method for vacuum sputtering.Specifically do
Method is to be positioned over the above substrate and be provided with the vacuum sputtering chamber of copper gallium alloy target, thin using sputter deposition
The mode of film deposits one layer of copper gallium alloy film, and two kinds of elements of copper and gallium of the copper gallium alloy film come from same copper gallium and close
Gold target, the copper and gallium element atomic quantity ratio of copper gallium alloy target are 2 ~ 8.After the completion of this step, copper gallium alloy film 03 sinks
Product is on molybdenum film 02.
2nd, the substrate that will sputter copper gallium alloy film is positioned in 500 ~ 600 DEG C of the environment rich in selenium steam, to copper
Gallium alloy film carries out selenization.The selenization time is 20 ~ 60 minutes.Preferably, the selenization can put
Having put in the vacuum evaporation chamber of selenium evaporation source is carried out.
3rd, the copper gallium film by the substrate after selenization and thereon is placed on and is provided with being total to for indium evaporation source and selenium evaporation source
In evaporation in vacuo chamber, by indium and selenium hydatogenesis to copper gallium alloy film at 500 ~ 600 DEG C, CIGS chemical combination is formed
Thing semiconductive thin film 04.During indium and selenium hydatogenesis, copper, gallium, indium, four kinds of elements of selenium simultaneously inter-diffusion reaction,
Form copper-indium-gallium-selenium compound semiconductive thin film 04.
4th, after above-mentioned indium and selenium hydatogenesis are finished, then copper-indium-gallium-selenium compound semiconductor film by substrate and thereon
Film 04 is placed into the vacuum evaporation chamber for being provided with gallium evaporation source, copper-indium-gallium-selenium compound semiconductive thin film is deposited a small amount of
Gallium 05, the deposit thickness of the gallium is 5 ~ 50 nanometers.It is intended that regulation copper-indium-galliun-selenium film solar cell photoelectric absorption turns
The electric property of layer is changed, the efficiency of copper-indium-galliun-selenium film solar cell is improved.
In addition, as the preferred of copper-indium-galliun-selenium film solar cell component is made, in above-mentioned 1 step copper gallium alloy film
After formation, with the method for laser scribing, by copper gallium alloy film and the substrate surface being in contact with it, both molybdenum film is delineated together,
To cook up each sub- solar cell of copper-indium-galliun-selenium film solar cell.The purpose of this means is to reduce solar energy
The leakage current of photovoltaic module.Because relative to traditional fabrication copper indium gallium selenium solar photovoltaic module method at second stroke
Copper-indium-gallium-selenium alloy film is just demarcated into next way after line, the above method described in patent of the present invention is when delineating first time
Just copper gallium is demarcated so that the leakage current for remaining copper contribution on the substrate of dashed part is less.
Claims (2)
1. a kind of preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer, it is characterised in that with following step
Suddenly：
A) one layer of 0.2~2.5 copper gallium alloy film of μ m-thick, is sputtered on substrate with the method for vacuum sputtering；
B) substrate that, will sputter copper gallium alloy film is positioned in 500~600 DEG C of the environment rich in selenium steam copper gallium is closed
Gold thin film carries out selenization；
C), the substrate after selenization is placed on and is provided with the coevaporation vacuum chamber of indium evaporation source and selenium evaporation source, 500~
By on indium and selenium hydatogenesis to copper gallium alloy film at 600 DEG C, copper-indium-gallium-selenium compound semiconductive thin film is formed；
D), the copper-indium-gallium-selenium compound semiconductive thin film by substrate and thereon is placed into the vacuum evaporation for being provided with gallium evaporation source
In chamber, deposit thickness is 5 ~ 50 nanometers of gallium on copper-indium-gallium-selenium compound semiconductive thin film.
2. the preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer according to claim 1, it is special
Levy and be：In above-mentioned a）After step copper gallium alloy film is formed, with the method for laser scribing by copper gallium alloy film and and its
The substrate surface of contact is delineated together, to cook up each sub- solar cell of solar cell.
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| CN103526159A (en) * | 2012-07-04 | 2014-01-22 | 甘国工 | Equipment and method for depositing copper-indium-gallium-selenium absorption layer on glass or metal substrate |
| CN103706799A (en) * | 2013-12-27 | 2014-04-09 | 柳州百韧特先进材料有限公司 | Method for preparing CIGS powder through dry method |
| KR20140074441A (en) * | 2012-12-07 | 2014-06-18 | 한국생산기술연구원 | Flexible thin film type Solar Cell and Method for manufacturing the same |
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2016
- 2016-06-04 CN CN201610410939.4A patent/CN105810764B/en active Active
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|---|---|---|---|---|
| WO2006101986A2 (en) * | 2005-03-16 | 2006-09-28 | Nanosolar, Inc. | Mettalic dispersion and formation of compound film for photovoltaic device active layer |
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| CN103367523A (en) * | 2012-03-28 | 2013-10-23 | 英莱新能（上海）有限公司 | Thin film solar cell absorption layer manufacture device and thin film solar cell absorption layer manufacture method |
| CN103526159A (en) * | 2012-07-04 | 2014-01-22 | 甘国工 | Equipment and method for depositing copper-indium-gallium-selenium absorption layer on glass or metal substrate |
| KR20140074441A (en) * | 2012-12-07 | 2014-06-18 | 한국생산기술연구원 | Flexible thin film type Solar Cell and Method for manufacturing the same |
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