CN101459200B - Preparation method of flexible CIGS thin-film solar cell and absorption layer - Google Patents

Preparation method of flexible CIGS thin-film solar cell and absorption layer Download PDF

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CN101459200B
CN101459200B CN2007101510406A CN200710151040A CN101459200B CN 101459200 B CN101459200 B CN 101459200B CN 2007101510406 A CN2007101510406 A CN 2007101510406A CN 200710151040 A CN200710151040 A CN 200710151040A CN 101459200 B CN101459200 B CN 101459200B
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方小红
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CETC 18 Research Institute
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention belongs to a method for preparing an absorption layer of a flexible CIGS thin-film solar cell, which comprises: on a substrate, depositing a bottom electrode Mo by magnetron sputtering, then preparing a metal prefabricating layer by using the magnetro sputtering method with CuIn and CuGa alloy target materials on the bottom electrode Mo film; arranging the substrate deposited with the bottom electrode Mo and the CIGS metal prefabricating layer in a quartz tube, at the same time posting a solid selenium source or sulfur source in the tube, after vacuum sealing, placing in a stage-temperature-programmed tube furnace for a selenylation or sulfuration treatment for 10-30min, completely converting the metal prefabricating layer into the CuIn1-XGaXSe2 or the CuIn1-XGaXS2 compound semiconductor film. Through performing selenizing or vulcanizing under saturation vapor pressure of selenium or sulfur in a vacuum seal silica tube, controllable repeatability of the technique process is fine, use quantity of selenium or sulfur is reduced, besides, the process is controllable and the equipment is simple.

Description

The preparation method of flexible CIGS thin-film solar cell absorbed layer
Technical field
The invention belongs to technical field of solar cells, particularly relate to a kind of preparation method of flexible CIGS thin-film solar cell absorbed layer.
Background technology
Compound semiconductor copper indium diselenide with yellow copper structure is CuInSe 2, being abbreviated as the miscible crystal of CIS series is the direct band gap material, with its thin film solar cell as absorbed layer, is considered to one of the most promising third generation compound photovoltaic cell, its composition comprises: CuInSe 2, CuIn 1-XGa XSe 2, CuInS 2, CuIn 1-XGa XS 2, CuIn 1-XGa XSe 2-XS 2Deng.Existing Copper Indium Gallium Selenide or S thin film solar cell, it is the novel solar cell that later development comes out in the eighties in 20th century, be in soda-lime glass, metal forming, as: stainless steel foil, titanium foil, Mo paper tinsel, aluminium foil etc., or the photovoltaic device that difference deposit multilayer film constitutes on the polyimide film substrate, typical structure is following multi-layer film structure: substrate/hearth electrode/absorbed layer/resilient coating/Window layer/antireflective coating/top electrode.
Studies show that absorbed layer CIGS film is to the battery performance decisive role.Because many, the complex structure of elemental composition, mainly by Cu, In, Ga, Se or/and four kinds or five kinds elements of S are synthetic, be that the stoicheiometry of an element and distribution thereof are the key factors of decision battery performance in the optical absorbing layer by multiple mutual so molten compound constitutes.
The preparation method of CIGS absorbed layer mainly is divided into two classes: first kind method is polynary coevaporation method, is that coevaporation is reacted in the source in vacuum chamber with Cu, In, Ga and Se, or with binary distribution coevaporations such as Cu+Se, In+Se, Ga+Se.Coevaporation method requires the evaporation rate and the deposition on substrate of every kind of element all to require accurate control, just can obtain uniform film; Second method is a selenizing method behind the metal preformed layer, deposits Cu, In, Ga layer by proportioning earlier on substrate, and Seization in Se atmosphere finally forms the CuIn that satisfies ratio requirement again 1-XGa XSe 2Polycrystal film.Substitute selenium with sulphur equally, carry out the thermo-chemical treatment of sulphur distribution behind vulcanization reaction or the first selenium, form CuIn 1-XGa XS 2Or CuIn 1-XGa XSe 2-XS 2Metal preformed layer film build method has the method that sputter, evaporation, electro-deposition, sputter and evaporation combine etc., and its uniformity of film is more easy to control, and deposit thickness is ripe preparation technology in grasp, and the cost of process equipment is not high.Wherein magnetically controlled sputter method technology is easy, elemental composition is easy to control, is effectively film build method.Back selenizing or sulfuration process mainly comprise chemical vapour deposition technique and chemical solid-state selenium or sulphur evaporation.The former is owing to need to adopt the hydrogen selenide of severe toxicity or hydrogen sulfide gas and domesticly there is no the hydrogen selenide gas supply and difficult enforcement; The latter adopts the lower and extensive employing of Solid State Source and equipment manufacturing cost with regard to present technology.
Conventional Solid State Source selenizing or sulfuration are to make it be vaporized into steam on selenium or sulphur heating in vacuum chamber, generate CuIn with the reaction of metal preformed layer after reaching uniform temperature 1-XGa XSe 2Or CuIn 1-XGa XS 2, because the uniformity of whole warm area is uncontrollable in the vacuum chamber, and need selenium or sulphur steam to be covered with whole vacuum chamber, meet cold then condensation at vacuum-chamber wall, cause selenizing technology instability, the uncontrollable absorbed layer film performance that causes is not good, influences the performance of thin film solar cell.If by adding reacting gas hydrogen or argon gas+hydrogen, then produced hypertoxic hydrogen selenide, vent gas treatment is a big problem; If only feed inert gas (as: argon gas), then can not control the pressure of selenium steam or sulphur steam, cause selenizing technology instability, poor controllability.
Summary of the invention
The present invention is for solving problems of the prior art, provides that a kind of equipment is simple, process is controlled, the preparation method of the flexible CIGS thin-film solar cell absorbed layer of good process repeatability.
The present invention for solving the technical scheme that technical problem adopted that exists in the known technology is:
The preparation method of flexible CIGS thin-film solar cell absorbed layer, be characterized in: on the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film.
The present invention can also adopt following technical measures to realize:
On the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film replaces selenium source with the sulphur source again, carries out sulfidation, finally forms CuIn 1-XGa XSe 2-XS 2Compound semiconductor film.
Described substrate thickness is 10-100 μ m; Flexible metallic material is titanium foil, stainless steel foil, molybdenum foil or aluminium foil.
Hearth electrode Mo on the described substrate is a duplicature.
Advantage and good effect that the present invention has are: in the vacuum seal quartz ampoule, carry out selenizing or sulfuration by adopting, and the technical process controllable repeatability, selenizing or sulfuration thoroughly, fully, have evenly reduced the consumption of selenium or sulphur, and process is controlled, and equipment is simple.
Description of drawings
Fig. 1 is the flexible CIGS thin-film solar cell structural representation.
Label among the figure is respectively: 1. top electrode; 2. antireflective coating; 3. Window layer; 4. resilient coating; 5. absorbed layer; 6. hearth electrode; 7. substrate.
Embodiment
For further understanding summary of the invention of the present invention, characteristics and effect, enumerate following examples now, and conjunction with figs. is described in detail as follows:
Please refer to Fig. 1:
The CIGS thin-film solar cell that constitutes by flexible substrate, hearth electrode, absorbed layer, resilient coating, Window layer, antireflective coating and top electrode, aspect the preparation of absorbed layer, CIGS thin-film solar cell with thick be flexible titanium foil, stainless steel foil or the polyimide film flexible material of 10-100 μ m as substrate, on substrate, prepare duplicature hearth electrode Mo with magnetron sputtering method; On flexible metal substrate of plating hearth electrode Mo or polyimide film substrate, prepare copper indium gallium metal preformed layer with sputtering method, after place the glass tube of vacuum sealing with solid-state selenium source or selenizing of sulphur source or sulfuration substrate, guarantee to depress selenizing or sulfuration at the saturated vapor of selenium or sulphur, make the metal preformed layer change Copper Indium Gallium Selenide or sulphur absorbed layer into, satisfy the requirement of thin film solar cell.In the method, can take a kind of of following dual mode that the metal preformed layer is carried out selenizing or/and sulfuration.
First method: on flexible metal substrate of plating hearth electrode Mo or polyimide film substrate, prepare copper indium gallium metal preformed layer with sputtering method, then substrate and solid-state selenium source are placed quartz ampoule, vacuum seal, and be placed in the tube furnace of sectional temperature control, make the substrate region be heated to 400-590 ℃, solid-state selenium source region temperature is heated to 180-300 ℃, make selenium atom and copper indium gallium metal atom react, make the deep diffusion of selenium atom simultaneously along copper indium gallium metal preformed layer film, copper indium gallium atom spreads to film surface, thereby copper indium gallium preformed layer generation qualitative change is until forming CuIn 1-XGa XSe 2Compound semiconductor film.Change solid-state selenium source into the sulphur source, other condition is constant, then forms CuIn 1-XGa XS 2Compound semiconductor film.
Second method, in two steps copper indium gallium metal preformed layer is carried out selenizing and vulcanizing treatment, promptly with solid-state selenium source copper indium gallium metal preformed layer is carried out carrying out vulcanizing treatment with solid-state sulphur source after selenizing is handled earlier, or earlier with solid-state sulphur source copper indium gallium metal preformed layer being carried out after the vulcanizing treatment carrying out selenizing with solid-state selenium source, to handle its process conditions identical with first method with requirement, finally forms CuIn 1-XGa xSe 2-XS 2Compound semiconductor film.
Embodiment 1: prepare duplicature hearth electrode Mo with direct current magnetron sputtering process on 20-100 μ m titanium foil, the thickness of hearth electrode is 0.5-1.5 μ m, prepare the metal preformed layer with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo, thickness is 0.6-1.2 μ m.The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, place the solid-state selenium source of 0.5-5g simultaneously, vacuum seal.Put into the tube furnace of sectional temperature programmed control, heat up uniformly fast,, make substrate region temperature be controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, thickness according to the metal preformed layer, carry out the selenizing of 10-30min and handle, make the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film.
Embodiment 2: change backing material into stainless steel foil, other condition is identical with embodiment 1, makes CuIn 1-XGa XSe 2Compound semiconductor film.
Embodiment 3: change solid-state selenium source into solid-state sulphur source, other condition is identical with embodiment 1, makes CuIn 1-XGa XS 2Compound semiconductor film.
Embodiment 4: change backing material into polyimide film, substrate region temperature is controlled at 400-450 ℃, and other condition is identical with embodiment 1, makes CuIn 1-XGa XSe 2Compound semiconductor film.
Embodiment 5: in the selenizing later stage of embodiment 1, the method for pressing embodiment 3 increases sulfidation, makes CuIn 1-XGa XSe 2The part selenium atom is replaced by sulphur atom, makes CuIn 1-XGa XSe 2-XS 2Compound semiconductor film.
Embodiment 6: in the sulfuration later stage of embodiment 3, the method for pressing embodiment 1 increases the selenizing process, makes CuIn 1-xGa XS 2The part sulphur atom is replaced by selenium atom, makes CuIn 1-XGa XSe 2-XS 2Compound semiconductor film.
Embodiment 7: change backing material into the Mo paper tinsel, other condition is identical with embodiment 1, makes CuIn 1 -XGa XSe 2Compound semiconductor film.
Embodiment 8: change backing material into aluminium foil, other condition is identical with embodiment 1, makes CuIn 1 -XGa XSe 2Compound semiconductor film.

Claims (4)

1. the preparation method of flexible CIGS thin-film solar cell absorbed layer, it is characterized in that: on the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film.
2. the absorbed layer preparation method of flexible CIGS thin-film solar cell, it is characterized in that: on the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film replaces selenium source with the sulphur source again, carries out sulfidation, finally forms CuIn 1-XGa XSe 2 -XS 2Compound semiconductor film.
3. the preparation method of flexible CIGS thin-film solar cell absorbed layer according to claim 1 and 2 is characterized in that: described substrate thickness is 10-100 μ m; Flexible metallic material is titanium foil, stainless steel foil, molybdenum foil or aluminium foil.
4. the preparation method of flexible CIGS thin-film solar cell absorbed layer according to claim 1 and 2 is characterized in that: the hearth electrode Mo on the described substrate is a duplicature.
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CN103400899B (en) * 2013-08-07 2015-11-04 研创应用材料（赣州）有限公司 A kind of method preparing porousness precursor layer and absorbed layer thin film planarization
CN103681960A (en) * 2013-11-21 2014-03-26 山东希格斯新能源有限责任公司 Multi-step sputtering process for preparation of CIG precursor layer of CIGS (copper indium gallium selenide) film
CN104393111A (en) * 2014-10-31 2015-03-04 徐东 Preparation method for CIGS solar cell absorption layer
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CN109622347A (en) * 2018-12-26 2019-04-16 浙江清华柔性电子技术研究院 Flexible MEMS ultrasonic transducer and preparation method thereof
CN109671796B (en) * 2018-12-26 2022-12-20 浙江清华柔性电子技术研究院 Flexible solar blind type ultraviolet light detector and manufacturing method thereof
CN115863489B (en) * 2023-03-02 2023-06-30 广东联塑班皓新能源科技集团有限公司 Manufacturing method of photovoltaic module
CN116397200B (en) * 2023-06-08 2023-08-08 合肥工业大学 Single-source thermal evaporation preparation method of molybdenum-copper laminated substrate of copper-antimony-selenium light absorption layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101165923A (en) * 2006-10-19 2008-04-23 中国电子科技集团公司第十八研究所 Flexible copper-indium-gallium-selenium film solar cell and its preparation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101165923A (en) * 2006-10-19 2008-04-23 中国电子科技集团公司第十八研究所 Flexible copper-indium-gallium-selenium film solar cell and its preparation method

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Friedrich Kessler,et.al..Technological aspects of flexible CIGS solar cells andmodules.Solar Energy77 6.2004,第687页左栏第11行-右栏第16行、表1，表3.
Friedrich Kessler,et.al..Technological aspects of flexible CIGS solar cells andmodules.Solar Energy77 6.2004,第687页左栏第11行-右栏第16行、表1,表3. *
Hashimoto, Y. et.al..High efficiency CIGS solar cell on flexible stainless steel.3rd World Conference on Photovoltaic Energy Conversion.2003,3第574页左栏第1行-右栏倒数第16行. *
孙云,等.CIS和CIGS薄膜太阳电池的研究.太阳能学报22 2.2001,22(2),第193页右栏第9-18行.
孙云,等.CIS和CIGS薄膜太阳电池的研究.太阳能学报22 2.2001,22(2),第193页右栏第9-18行. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102509737A (en) * 2011-11-02 2012-06-20 南开大学 Flexible stainless steel substrate copper-indium-gallium-selenium film battery and preparation method thereof

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