CN101459200B - Preparation method of flexible CIGS thin-film solar cell and absorption layer - Google Patents

Preparation method of flexible CIGS thin-film solar cell and absorption layer Download PDF

Info

Publication number
CN101459200B
CN101459200B CN2007101510406A CN200710151040A CN101459200B CN 101459200 B CN101459200 B CN 101459200B CN 2007101510406 A CN2007101510406 A CN 2007101510406A CN 200710151040 A CN200710151040 A CN 200710151040A CN 101459200 B CN101459200 B CN 101459200B
Authority
CN
China
Prior art keywords
substrate
cuin
hearth electrode
solar cell
electrode mo
Prior art date
Application number
CN2007101510406A
Other languages
Chinese (zh)
Other versions
CN101459200A (en
Inventor
方小红
Original Assignee
中国电子科技集团公司第十八研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国电子科技集团公司第十八研究所 filed Critical 中国电子科技集团公司第十八研究所
Priority to CN2007101510406A priority Critical patent/CN101459200B/en
Publication of CN101459200A publication Critical patent/CN101459200A/en
Application granted granted Critical
Publication of CN101459200B publication Critical patent/CN101459200B/en

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The invention belongs to a method for preparing an absorption layer of a flexible CIGS thin-film solar cell, which comprises: on a substrate, depositing a bottom electrode Mo by magnetron sputtering, then preparing a metal prefabricating layer by using the magnetro sputtering method with CuIn and CuGa alloy target materials on the bottom electrode Mo film; arranging the substrate deposited with the bottom electrode Mo and the CIGS metal prefabricating layer in a quartz tube, at the same time posting a solid selenium source or sulfur source in the tube, after vacuum sealing, placing in a stage-temperature-programmed tube furnace for a selenylation or sulfuration treatment for 10-30min, completely converting the metal prefabricating layer into the CuIn1-XGaXSe2 or the CuIn1-XGaXS2 compound semiconductor film. Through performing selenizing or vulcanizing under saturation vapor pressure of selenium or sulfur in a vacuum seal silica tube, controllable repeatability of the technique process is fine, use quantity of selenium or sulfur is reduced, besides, the process is controllable and the equipment is simple.

Description

The preparation method of flexible CIGS thin-film solar cell absorbed layer

Technical field

The invention belongs to technical field of solar cells, particularly relate to a kind of preparation method of flexible CIGS thin-film solar cell absorbed layer.

Background technology

Compound semiconductor copper indium diselenide with yellow copper structure is CuInSe 2, being abbreviated as the miscible crystal of CIS series is the direct band gap material, with its thin film solar cell as absorbed layer, is considered to one of the most promising third generation compound photovoltaic cell, its composition comprises: CuInSe 2, CuIn 1-XGa XSe 2, CuInS 2, CuIn 1-XGa XS 2, CuIn 1-XGa XSe 2-XS 2Deng.Existing Copper Indium Gallium Selenide or S thin film solar cell, it is the novel solar cell that later development comes out in the eighties in 20th century, be in soda-lime glass, metal forming, as: stainless steel foil, titanium foil, Mo paper tinsel, aluminium foil etc., or the photovoltaic device that difference deposit multilayer film constitutes on the polyimide film substrate, typical structure is following multi-layer film structure: substrate/hearth electrode/absorbed layer/resilient coating/Window layer/antireflective coating/top electrode.

Studies show that absorbed layer CIGS film is to the battery performance decisive role.Because many, the complex structure of elemental composition, mainly by Cu, In, Ga, Se or/and four kinds or five kinds elements of S are synthetic, be that the stoicheiometry of an element and distribution thereof are the key factors of decision battery performance in the optical absorbing layer by multiple mutual so molten compound constitutes.

The preparation method of CIGS absorbed layer mainly is divided into two classes: first kind method is polynary coevaporation method, is that coevaporation is reacted in the source in vacuum chamber with Cu, In, Ga and Se, or with binary distribution coevaporations such as Cu+Se, In+Se, Ga+Se.Coevaporation method requires the evaporation rate and the deposition on substrate of every kind of element all to require accurate control, just can obtain uniform film; Second method is a selenizing method behind the metal preformed layer, deposits Cu, In, Ga layer by proportioning earlier on substrate, and Seization in Se atmosphere finally forms the CuIn that satisfies ratio requirement again 1-XGa XSe 2Polycrystal film.Substitute selenium with sulphur equally, carry out the thermo-chemical treatment of sulphur distribution behind vulcanization reaction or the first selenium, form CuIn 1-XGa XS 2Or CuIn 1-XGa XSe 2-XS 2Metal preformed layer film build method has the method that sputter, evaporation, electro-deposition, sputter and evaporation combine etc., and its uniformity of film is more easy to control, and deposit thickness is ripe preparation technology in grasp, and the cost of process equipment is not high.Wherein magnetically controlled sputter method technology is easy, elemental composition is easy to control, is effectively film build method.Back selenizing or sulfuration process mainly comprise chemical vapour deposition technique and chemical solid-state selenium or sulphur evaporation.The former is owing to need to adopt the hydrogen selenide of severe toxicity or hydrogen sulfide gas and domesticly there is no the hydrogen selenide gas supply and difficult enforcement; The latter adopts the lower and extensive employing of Solid State Source and equipment manufacturing cost with regard to present technology.

Conventional Solid State Source selenizing or sulfuration are to make it be vaporized into steam on selenium or sulphur heating in vacuum chamber, generate CuIn with the reaction of metal preformed layer after reaching uniform temperature 1-XGa XSe 2Or CuIn 1-XGa XS 2, because the uniformity of whole warm area is uncontrollable in the vacuum chamber, and need selenium or sulphur steam to be covered with whole vacuum chamber, meet cold then condensation at vacuum-chamber wall, cause selenizing technology instability, the uncontrollable absorbed layer film performance that causes is not good, influences the performance of thin film solar cell.If by adding reacting gas hydrogen or argon gas+hydrogen, then produced hypertoxic hydrogen selenide, vent gas treatment is a big problem; If only feed inert gas (as: argon gas), then can not control the pressure of selenium steam or sulphur steam, cause selenizing technology instability, poor controllability.

Summary of the invention

The present invention is for solving problems of the prior art, provides that a kind of equipment is simple, process is controlled, the preparation method of the flexible CIGS thin-film solar cell absorbed layer of good process repeatability.

The present invention for solving the technical scheme that technical problem adopted that exists in the known technology is:

The preparation method of flexible CIGS thin-film solar cell absorbed layer, be characterized in: on the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film.

The present invention can also adopt following technical measures to realize:

On the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film replaces selenium source with the sulphur source again, carries out sulfidation, finally forms CuIn 1-XGa XSe 2-XS 2Compound semiconductor film.

Described substrate thickness is 10-100 μ m; Flexible metallic material is titanium foil, stainless steel foil, molybdenum foil or aluminium foil.

Hearth electrode Mo on the described substrate is a duplicature.

Advantage and good effect that the present invention has are: in the vacuum seal quartz ampoule, carry out selenizing or sulfuration by adopting, and the technical process controllable repeatability, selenizing or sulfuration thoroughly, fully, have evenly reduced the consumption of selenium or sulphur, and process is controlled, and equipment is simple.

Description of drawings

Fig. 1 is the flexible CIGS thin-film solar cell structural representation.

Label among the figure is respectively: 1. top electrode; 2. antireflective coating; 3. Window layer; 4. resilient coating; 5. absorbed layer; 6. hearth electrode; 7. substrate.

Embodiment

For further understanding summary of the invention of the present invention, characteristics and effect, enumerate following examples now, and conjunction with figs. is described in detail as follows:

Please refer to Fig. 1:

The CIGS thin-film solar cell that constitutes by flexible substrate, hearth electrode, absorbed layer, resilient coating, Window layer, antireflective coating and top electrode, aspect the preparation of absorbed layer, CIGS thin-film solar cell with thick be flexible titanium foil, stainless steel foil or the polyimide film flexible material of 10-100 μ m as substrate, on substrate, prepare duplicature hearth electrode Mo with magnetron sputtering method; On flexible metal substrate of plating hearth electrode Mo or polyimide film substrate, prepare copper indium gallium metal preformed layer with sputtering method, after place the glass tube of vacuum sealing with solid-state selenium source or selenizing of sulphur source or sulfuration substrate, guarantee to depress selenizing or sulfuration at the saturated vapor of selenium or sulphur, make the metal preformed layer change Copper Indium Gallium Selenide or sulphur absorbed layer into, satisfy the requirement of thin film solar cell.In the method, can take a kind of of following dual mode that the metal preformed layer is carried out selenizing or/and sulfuration.

First method: on flexible metal substrate of plating hearth electrode Mo or polyimide film substrate, prepare copper indium gallium metal preformed layer with sputtering method, then substrate and solid-state selenium source are placed quartz ampoule, vacuum seal, and be placed in the tube furnace of sectional temperature control, make the substrate region be heated to 400-590 ℃, solid-state selenium source region temperature is heated to 180-300 ℃, make selenium atom and copper indium gallium metal atom react, make the deep diffusion of selenium atom simultaneously along copper indium gallium metal preformed layer film, copper indium gallium atom spreads to film surface, thereby copper indium gallium preformed layer generation qualitative change is until forming CuIn 1-XGa XSe 2Compound semiconductor film.Change solid-state selenium source into the sulphur source, other condition is constant, then forms CuIn 1-XGa XS 2Compound semiconductor film.

Second method, in two steps copper indium gallium metal preformed layer is carried out selenizing and vulcanizing treatment, promptly with solid-state selenium source copper indium gallium metal preformed layer is carried out carrying out vulcanizing treatment with solid-state sulphur source after selenizing is handled earlier, or earlier with solid-state sulphur source copper indium gallium metal preformed layer being carried out after the vulcanizing treatment carrying out selenizing with solid-state selenium source, to handle its process conditions identical with first method with requirement, finally forms CuIn 1-XGa xSe 2-XS 2Compound semiconductor film.

Embodiment 1: prepare duplicature hearth electrode Mo with direct current magnetron sputtering process on 20-100 μ m titanium foil, the thickness of hearth electrode is 0.5-1.5 μ m, prepare the metal preformed layer with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo, thickness is 0.6-1.2 μ m.The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, place the solid-state selenium source of 0.5-5g simultaneously, vacuum seal.Put into the tube furnace of sectional temperature programmed control, heat up uniformly fast,, make substrate region temperature be controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, thickness according to the metal preformed layer, carry out the selenizing of 10-30min and handle, make the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film.

Embodiment 2: change backing material into stainless steel foil, other condition is identical with embodiment 1, makes CuIn 1-XGa XSe 2Compound semiconductor film.

Embodiment 3: change solid-state selenium source into solid-state sulphur source, other condition is identical with embodiment 1, makes CuIn 1-XGa XS 2Compound semiconductor film.

Embodiment 4: change backing material into polyimide film, substrate region temperature is controlled at 400-450 ℃, and other condition is identical with embodiment 1, makes CuIn 1-XGa XSe 2Compound semiconductor film.

Embodiment 5: in the selenizing later stage of embodiment 1, the method for pressing embodiment 3 increases sulfidation, makes CuIn 1-XGa XSe 2The part selenium atom is replaced by sulphur atom, makes CuIn 1-XGa XSe 2-XS 2Compound semiconductor film.

Embodiment 6: in the sulfuration later stage of embodiment 3, the method for pressing embodiment 1 increases the selenizing process, makes CuIn 1-xGa XS 2The part sulphur atom is replaced by selenium atom, makes CuIn 1-XGa XSe 2-XS 2Compound semiconductor film.

Embodiment 7: change backing material into the Mo paper tinsel, other condition is identical with embodiment 1, makes CuIn 1 -XGa XSe 2Compound semiconductor film.

Embodiment 8: change backing material into aluminium foil, other condition is identical with embodiment 1, makes CuIn 1 -XGa XSe 2Compound semiconductor film.

Claims (4)

1. the preparation method of flexible CIGS thin-film solar cell absorbed layer, it is characterized in that: on the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film.
2. the absorbed layer preparation method of flexible CIGS thin-film solar cell, it is characterized in that: on the substrate of flexible metal or polyimide film, the hearth electrode Mo that magnetron sputtering deposition 0.5-1.5 μ m is thick prepares the metal preformed layer that thickness is 0.6-1.2 μ m with CuIn and CuGa alloy target material with magnetron sputtering method again on hearth electrode Mo; The substrate that deposits hearth electrode Mo and copper indium gallium metal preformed layer is placed quartz ampoule, in pipe, insert simultaneously the solid-state selenium source of 0.5-5g, vacuum seal, put into the tube furnace of sectional temperature programmed control, substrate region temperature is controlled at 400-590 ℃, solid-state selenium source region temperature is controlled at 180-300 ℃, carries out the selenizing of 10-30min and handles, and makes the metal preformed layer change CuIn fully into 1-XGa XSe 2Compound semiconductor film replaces selenium source with the sulphur source again, carries out sulfidation, finally forms CuIn 1-XGa XSe 2 -XS 2Compound semiconductor film.
3. the preparation method of flexible CIGS thin-film solar cell absorbed layer according to claim 1 and 2 is characterized in that: described substrate thickness is 10-100 μ m; Flexible metallic material is titanium foil, stainless steel foil, molybdenum foil or aluminium foil.
4. the preparation method of flexible CIGS thin-film solar cell absorbed layer according to claim 1 and 2 is characterized in that: the hearth electrode Mo on the described substrate is a duplicature.
CN2007101510406A 2007-12-14 2007-12-14 Preparation method of flexible CIGS thin-film solar cell and absorption layer CN101459200B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2007101510406A CN101459200B (en) 2007-12-14 2007-12-14 Preparation method of flexible CIGS thin-film solar cell and absorption layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2007101510406A CN101459200B (en) 2007-12-14 2007-12-14 Preparation method of flexible CIGS thin-film solar cell and absorption layer

Publications (2)

Publication Number Publication Date
CN101459200A CN101459200A (en) 2009-06-17
CN101459200B true CN101459200B (en) 2011-07-20

Family

ID=40769927

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101510406A CN101459200B (en) 2007-12-14 2007-12-14 Preparation method of flexible CIGS thin-film solar cell and absorption layer

Country Status (1)

Country Link
CN (1) CN101459200B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102509737A (en) * 2011-11-02 2012-06-20 南开大学 Flexible stainless steel substrate copper-indium-gallium-selenium film battery and preparation method thereof

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI458116B (en) * 2010-08-09 2014-10-21 Tsmc Solar Ltd Apparatus and method for depositing a cigs layer
CN101673777B (en) * 2009-10-13 2011-04-27 华东师范大学 Solar battery with soft copper, indium, gallium and selenium film
CN101789469B (en) * 2010-03-05 2013-01-02 中国科学院上海硅酸盐研究所 Method for preparing light absorption layer of Cu-In-Ga-Se-S thin film solar cell
CN101834015B (en) * 2010-03-31 2011-12-21 鞍山华辉光电子材料科技有限公司 Flexible transparent conducting film for polyimide substrate and preparation method thereof
CN102024870B (en) * 2010-04-19 2013-07-24 福建欧德生光电科技有限公司 System and method for manufacturing semiconductor thin film solar cell
US8546176B2 (en) * 2010-04-22 2013-10-01 Tsmc Solid State Lighting Ltd. Forming chalcogenide semiconductor absorbers
CN102234777A (en) * 2010-04-30 2011-11-09 亚洲太阳科技有限公司 Magnetic control sputtering machine and sputtering method for manufacturing film solar battery
CN101908580B (en) * 2010-06-25 2012-07-25 清华大学 Process for continuously preparing CIGSSe solar cell absorbing layer
CN102154622A (en) * 2010-12-06 2011-08-17 电子科技大学 Method for preparing copper-indium-gallium-selenium thin film serving as light absorbing layer of solar cell
CN102956718A (en) * 2011-08-29 2013-03-06 晶元光电股份有限公司 Solar battery
CN102437237A (en) * 2011-11-29 2012-05-02 福建钧石能源有限公司 Chalcopyrite type thin film solar cell and manufacturing method thereof
CN102522437B (en) * 2011-12-15 2014-05-21 香港中文大学 CIGS solar cell device and manufacturing method thereof
CN102522434B (en) * 2011-12-15 2015-04-15 香港中文大学 Copper-indium-gallium-selenium film photovoltaic cell device and preparation method thereof
CN102569443A (en) * 2012-01-04 2012-07-11 范东华 Band gap tunable copper zinc tin sulfur semiconductor film and preparation method thereof
CN103400899B (en) * 2013-08-07 2015-11-04 研创应用材料(赣州)有限公司 A kind of method preparing porousness precursor layer and absorbed layer thin film planarization
CN103681960A (en) * 2013-11-21 2014-03-26 山东希格斯新能源有限责任公司 Multi-step sputtering process for preparation of CIG precursor layer of CIGS (copper indium gallium selenide) film
CN104393111A (en) * 2014-10-31 2015-03-04 徐东 Preparation method for CIGS solar cell absorption layer
CN104867989B (en) * 2015-06-01 2017-04-19 李云 High-efficiency flexible GaAs solar cell and manufacturing method thereof
CN105870254B (en) * 2016-04-27 2017-08-25 河南大学 The method that a kind of pair of target DC sputturing method prepares CuInGaSe absorbed layer
CN107946387A (en) * 2017-12-19 2018-04-20 电子科技大学中山学院 A kind of new annealing way of CZTS films

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101165923A (en) * 2006-10-19 2008-04-23 中国电子科技集团公司第十八研究所 Flexible copper-indium-gallium-selenium film solar cell and its preparation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101165923A (en) * 2006-10-19 2008-04-23 中国电子科技集团公司第十八研究所 Flexible copper-indium-gallium-selenium film solar cell and its preparation method

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Friedrich Kessler,et.al..Technological aspects of flexible CIGS solar cells andmodules.Solar Energy77 6.2004,第687页左栏第11行-右栏第16行、表1,表3.
Friedrich Kessler,et.al..Technological aspects of flexible CIGS solar cells andmodules.Solar Energy77 6.2004,第687页左栏第11行-右栏第16行、表1,表3. *
Hashimoto, Y. et.al..High efficiency CIGS solar cell on flexible stainless steel.3rd World Conference on Photovoltaic Energy Conversion.2003,3第574页左栏第1行-右栏倒数第16行. *
孙云,等.CIS和CIGS薄膜太阳电池的研究.太阳能学报22 2.2001,22(2),第193页右栏第9-18行.
孙云,等.CIS和CIGS薄膜太阳电池的研究.太阳能学报22 2.2001,22(2),第193页右栏第9-18行. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102509737A (en) * 2011-11-02 2012-06-20 南开大学 Flexible stainless steel substrate copper-indium-gallium-selenium film battery and preparation method thereof

Also Published As

Publication number Publication date
CN101459200A (en) 2009-06-17

Similar Documents

Publication Publication Date Title
Ramanujam et al. Copper indium gallium selenide based solar cells–a review
US9881774B2 (en) Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering
Lokhande et al. Development of Cu2SnS3 (CTS) thin film solar cells by physical techniques: A status review
Shi et al. Fabrication of Cu (In, Ga) Se2 thin films by sputtering from a single quaternary chalcogenide target
Frantz et al. Cu (In, Ga) Se2 thin films and devices sputtered from a single target without additional selenization
JP5923569B2 (en) Cu-Ga sputtering target
CN1214445C (en) Oxide-based method of making compound semiconductor film and making related electronic devices
KR101184783B1 (en) Forming chalcogenide semicoductor absorbers
US8188367B2 (en) Multilayer structure to form absorber layers for solar cells
US6429369B1 (en) Thin-film solar cells on the basis of IB-IIIA-VIA compound semiconductors and method for manufacturing same
US8431430B2 (en) Method for forming a compound semi-conductor thin-film
CN101002335B (en) Solar cell and method for preparing light-absorbing layer of said solar cell
US8097305B2 (en) Method for producing a thin-film chalcopyrite compound
US8338214B2 (en) Sodium salt containing CIG targets, methods of making and methods of use thereof
US9087954B2 (en) Method for producing the pentanary compound semiconductor CZTSSe, and thin-film solar cell
CN100463230C (en) Method for manufacturing chalcopyrite thin-film solar cell
US6323417B1 (en) Method of making I-III-VI semiconductor materials for use in photovoltaic cells
US7989256B2 (en) Method for manufacturing CIS-based thin film solar cell
CN100456502C (en) Process for producing chalcopyrite base light absorbing layer for thin-film solar cell
KR101623051B1 (en) Manufacturing method of cis thin-film solar cell
CN1257560C (en) Method for preparing selenide or sulfide semiconductor film material of copper-indium-gallium
US20100267190A1 (en) Laminated structure for cis based solar cell, and integrated structure and manufacturing method for cis based thin-film solar cell
JP2008520101A (en) Thermal process for producing in-situ bonding layers in CIGS
CN103474505B (en) Alkali-metal-doped method in copper-indium-galliun-selenium film solar cell large-scale production
KR20080072663A (en) Method and apparatus for converting precursor layers into photovoltaic absorbers

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant