CN101789469B - Method for preparing light absorption layer of Cu-In-Ga-Se-S thin film solar cell - Google Patents
Method for preparing light absorption layer of Cu-In-Ga-Se-S thin film solar cell Download PDFInfo
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Abstract
The invention relates to a method for preparing a Cu-In-Ga-Se-S (CIGSS) light absorption layer thin film. The method is characterized by comprising the following steps: firstly, depositing a Cu film on a substrate by a magnetron sputtering method; depositing an In-Ga film by an evaporation method to form a Cu-In-Ga alloy film; reacting the Cu-In-Ga alloy film with a solid Se source or a gaseous H2Se source to generate a Cu-In-Ga-Se (CIGS) film; and finally reacting the CIGS film with a solid simple substance S or a gaseous H2S source to generate the Cu-In-Ga-Se-S (CIGSS) light absorption layer thin film. The method for preparing the GIGSS thin film solves the problem that most of components of the thin film are difficult to control in a three-step co-evaporation method, solves the problem that the film growth rate is too slow in the magnetron sputtering method, improves the surface state of the GIGSS thin film, reduces the interface recombination of a GIGSS cell, and is favorable for the high-efficiency large-scale production of GIGSS thin film solar cells.
Description
Technical field
The present invention relates to the preparation method of compound semiconductor film, relate to or rather the preparation method of Cu-In-Ga-Se-S (CIGSS) thin film solar cell light absorption layer, belong to the photovoltaic material technical field of new energies.
Background technology
Copper Indium Gallium Selenide (Cu (In, Ga) Se
2, being called for short CIGS) and thin film solar cell is the most promising solar cell of a new generation, it has many-sided advantages such as cost is low, efficient is high, the life-span is long, low light level performance is good, capability of resistance to radiation is strong.Since the nineties in last century, CIGS is the highest thin film solar cell of laboratory conversion efficiency just always.2008, it is 19.9% (Ingrid Repins that U.S. regenerative resource laboratory (NREL) refreshes the high conversion efficiency in its laboratory again, Miguel A.Contreras, Brian Egaas, Clay DeHart, John Scharf, Craig L.Perkins, Bobby To and Rommel Noufi, Progress in Photovoltaics:Research and Applications, 16 (3), 235-239,2008), very approaching with the high conversion efficiency 20.3% in the laboratory of polysilicon, have vast potential for future development.
The preparation of CIGS light absorbing zone is the core process of CIGS thin film solar cell.The technique that NREL prepares efficient CIGS solar cell light absorption layer is three step coevaporation method (A.M.Gabor, J.R.Tuttle, D.S.Albin, M.A.Contreras, and R.Noufi, Appl.Phys.Lett.65,198,1994), adopt the prepared small size CIGS light absorbing zone film of three step coevaporation methods, although the CIGS light of preparation suction layer quality is high, performance is good, but because need to be to copper, indium, gallium, four vapour pressures of selenium differ very large simple substance source and carry out the accurate control of independence, and the especially anti-evaporation of the anti-evaporation of selenium and indium gallium selenium compound has brought very large difficulty to the control of the film ultimate constituent, when preparation large tracts of land CIGS light absorbing zone film, be difficult to guarantee the reliability of thin film composition uniformity and quality, thereby be difficult to realize large-scale production.
Adopt first magnetron sputtering to prepare forerunner's alloy film, the technique of then heat treatment selenizing is the first-selected technique of present CIGS thin film solar cell industrialization.But because indium is low-melting soft metal, when adopting magnetron sputtering method to prepare the indium film, high power density will cause the fusing distortion of indium target, mainly with adopting high Sputtering power density, and excessively low power density means that film deposition rate is very low, productive temp is too slow, is unfavorable for large-scale industrialization production.And the very easily passivation of the surface of indium target, the deposition rate in sputter procedure is unstable, and thin film technology technique can't be stablized.
In the CIGS film, introduce a certain amount of S element, become the CIGSS film.The energy gap of film not only can be further adjusted in the adding of S element, makes it more to mate with solar spectrum; And can make the band rank between light-absorption layer film CIGSS and the buffer layer thin film more suitable, and the interface that effectively reduces battery p-n junction is compound, improves the quality factor of p-n junction, and this point seems particularly important when adopting without the Cd transition zone.Thereby form design of the present invention.
Summary of the invention
A kind of preparation method who the purpose of this invention is to provide the CIGSS film, the preparation method who provides not only can improve the stability of large tracts of land CIGSS thin film preparation process and the uniformity of composition, improve the photoelectric conversion efficiency of CIGSS thin film solar cell, and can realize the high speed deposition of film; And the introducing by the S element, the band rank between CIGSS and the resilient coating are mated more, reduce the compound of few son on the interface, improve the quality factor of CIGSS thin film solar cell p-n junction, effectively promote the develop without the efficient CIGSS thin film solar cell of Cd.
The present invention is achieved through the following technical solutions:
A kind of preparation method of Cu-In-Ga-Se-S (CIGSS) light-absorption layer film is characterized in that: preparing of copper indium gallium metal precursor film adopted sputter and evaporated compound method, realizes the high speed stably depositing of film; And at Copper Indium Gallium Selenide surface introducing element sulphur, improve the interface performance of battery.Specifically may further comprise the steps:
(a) (18-25 ℃) prepares the Cu film by magnetron sputtering method under normal temperature on the substrate;
(b) prepare the In-Ga film on the surface of said film by evaporation, form the Cu-In-Ga alloy film;
(c) with Cu-In-Ga alloy film and solid-state Se simple substance or gaseous state H
2The reaction of Se source generates Copper Indium Gallium Selenide (CIGS) film;
(d) with CIGS film and solid-state S simple substance or the gaseous state H of above-mentioned generation
2The reaction of S source generates Cu-In-Ga-Se-S (CIGSS) light-absorption layer film.
In above-mentioned preparation process (a), the thickness that magnetron sputtering method prepares the Cu film is 50nm～350nm, is preferably 80nm～280nm; The sputtering condition that adopts is: Sputtering power density is 0.2Wcm
-2～10Wcm
-2, range is 4cm～20cm, and operating air pressure is 0.05Pa～20Pa, and wherein Sputtering power density is preferably 0.5Wcm
-2～5Wcm
-2, range is preferably 5cm～15cm, and operating air pressure is preferably 0.2Pa～10Pa;
In above-mentioned preparation process (b), the thickness that evaporation prepares the In-Ga film is that 100nm～800nm is preferably 200nm～600nm; Evaporation source is In source and Ga source or In-Ga alloy source, the evaporation source temperature is 400 ℃～1800 ℃, and operating air pressure is 0.02Pa～200Pa, and wherein evaporation source is preferably In source and Ga source, it is 600 ℃～1600 ℃ that the evaporation source temperature is preferably, and operating air pressure is preferably and is 0.2Pa～20Pa.
The ratio of Cu atomicity and In and Ga atomicity sum is 0.4～1.0 in the Cu-In-Ga alloy film in above-mentioned preparation process (b), and namely 0.4≤Cu/ (In+Ga)≤1.0 is preferably 0.6≤Cu/ (In+Ga)≤0.95.
In above-mentioned preparation process (c), Cu-In-Ga alloy film and solid-state Se source reaction temperature are 350 ℃～600 ℃, and the reaction time is 5 seconds～3600 seconds; Wherein Cu-In-Ga precursor film and solid-state Se simple substance or gaseous state H
2Se source reaction temperature is preferably 450 ℃～570 ℃, and the reaction time is preferably 300 seconds～and 1800 seconds.
In above-mentioned preparation process (d), CIGS film and solid-state S simple substance or gaseous state H
2It is 350 ℃～600 ℃ that the reaction of S source generates CIGSS light-absorption layer film reaction temperature, and the reaction time is＞0 second～3600 seconds; Wherein CIGS film and solid-state S simple substance or gaseous state H
2S source reaction temperature is preferably 450 ℃～570 ℃, and the reaction time is preferably 50 seconds～and 1800 seconds.
In prepared CIGSS light absorbing zone film, wherein less than 1, namely 0＜S/ (S+Se)＜1.0 is preferably 0.05≤S/ (S+Se)≤0.35 to the ratio of S atomicity and S and Se atomicity sum greater than 0.
CIGSS thin film technology method provided by the present invention, not only avoided the unmanageable problem of large area film composition in the three step coevaporation methods, also overcome the excessively slow problem of rate of film build in the magnetron sputtering method, and improved the surface state of CIGSS film, the interface of having reduced the CIGSS battery is compound, and environmental friendliness is conducive to the suitability for industrialized production of CIGSS thin film solar cell.
Description of drawings
Fig. 1 is that embodiment 4 prepared CIGSS film scanning electron microscopes (SEM) are schemed;
Fig. 2 is the I-V curve chart of the prepared CIGS thin film solar cell of embodiment 4.
Embodiment
The below introduces embodiments of the invention, but the present invention is limited to absolutely not embodiment.
Embodiment 1:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 0.2Wcm
-2, range is 4cm, and operating air pressure is 0.05Pa, and the thickness of the Cu film of preparation is 50nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 600 ℃, and the temperature in Ga source is 400 ℃, and operating air pressure is 0.02Pa, and the thickness of the In-Ga film of preparation is 250nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.4; Prepared Cu-In-Ga alloy film and solid-state Se source were reacted 5 seconds under 600 ℃, prepare the CIGS film; CIGS film and solid-state S source were reacted 5 seconds at 350 ℃, obtain the CIGSS film, wherein the S atomicity is 0.4 with the ratio of S and Se atomicity sum.Adopt chemical bath deposition method to prepare zinc sulphide (ZnS) layer on the surface of CIGSS film, thickness is 70nm, magnetron sputtering method prepares native oxide zinc (i-ZnO) layer and Al-Doped ZnO (ZnO:Al) layer, thickness is respectively 100nm and 600nm, make the CIGSS thin film solar cell, the open circuit voltage of this battery is 360mV, and short circuit current is 10.6mAcm
-2
Embodiment 2:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 10Wcm
-2, range is 15cm, and operating air pressure is 20Pa, and the thickness of the Cu film of preparation is 100nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 1800 ℃, and the temperature in Ga source is 1600 ℃, and operating air pressure is 200Pa, and the thickness of the In-Ga film of preparation is 200nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=1.0; Prepared Cu-In-Ga alloy film and solid-state Se source were reacted 3600 seconds under 350 ℃, prepare the CIGS film, CIGS film and solid-state S source were reacted 5 seconds at 600 ℃, obtain the CIGSS film, wherein the S atomicity is 0.05 with the ratio of S and Se atomicity sum.The preparation of ZnS layer, i-ZnO layer and ZnO:Al layer is made the CIGSS thin film solar cell with embodiment 1, and the open circuit voltage of this battery is 325mV, and short circuit current is 15.8mAcm
-2
Embodiment 3:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 2Wcm
-2, range is 6cm, and operating air pressure is 0.5Pa, and the thickness of the Cu film of preparation is 120nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 800 ℃, and the temperature in Ga source is 600 ℃, and operating air pressure is 2Pa, and the thickness of the In-Ga film of preparation is 300nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.89; Prepared Cu-In-Ga alloy film and solid-state Se source were reacted 900 seconds under 550 ℃, prepare the CIGS film, CIGS film and solid-state S source were reacted 5 seconds at 350 ℃, obtain the CIGSS film, wherein the S atomicity is 0.1 with the ratio of S and Se atomicity sum.The preparation of ZnS layer, i-ZnO layer and ZnO:Al layer is made the CIGS thin film solar cell with embodiment 1, and the open circuit voltage of this battery is 512mV, and short circuit current is 28.2mAcm
-2
Embodiment 4:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 4Wcm
-2, range is 12cm, and operating air pressure is 5Pa, and the thickness of the Cu film of preparation is 150nm; Adopt In-Ga alloy source hydatogenesis In-Ga film, temperature is 600 ℃, and operating air pressure is 10Pa, and the thickness of the In-Ga film of preparation is 200nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.98; Prepared Cu-In-Ga alloy film and solid-state Se source were reacted 900 seconds under 600 ℃, prepare the CIGS film, CIGS film and solid-state S source were reacted 600 seconds at 600 ℃, obtain the CIGSS film, wherein the S atomicity is 0.4 with the ratio of S and Se atomicity sum.The SEM of prepared CIGSS absorbed layer film sees Fig. 1.The preparation of ZnS layer, i-ZnO layer and ZnO:Al layer is made the CIGS thin film solar cell with embodiment 1, and the open circuit voltage of this battery is 565mV, and short circuit current is 26.6mAcm
-2, its I-V characteristic is seen Fig. 2.
Embodiment 5:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 10Wcm
-2, range is 10cm, and operating air pressure is 5Pa, and the thickness of the Cu film of preparation is 350nm; Adopt In-Ga alloy source hydatogenesis In-Ga film, temperature is 800 ℃, and operating air pressure is 20Pa, and the thickness of the In-Ga film of preparation is 600nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.89; With Cu-In-Ga alloy film and H
2The CIGS film is prepared, with prepared CIGS film and H 550 ℃ of lower reactions 300 seconds in the Se source
2The S source obtains the CIGSS film 550 ℃ of reactions 300 seconds, and wherein the S atomicity is 0.5 with the ratio of S and Se atomicity sum.
Embodiment 6:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 1.5Wcm
-2, range is 8cm, and operating air pressure is 5Pa, and the thickness of the Cu film of preparation is 150nm; Adopt In-Ga alloy source hydatogenesis In-Ga film, temperature is 1800 ℃, and operating air pressure is 20Pa, and the thickness of the In-Ga film of preparation is 800nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.42; With Cu-In-Ga alloy film and H
2The CIGS film is prepared 350 ℃ of lower reactions 3600 seconds in the Se source, and prepared CIGS film and simple substance S source were reacted 10 seconds at 600 ℃, obtains the CIGSS film, and wherein the S atomicity is 0.05 with the ratio of S and Se atomicity sum.
Embodiment 7:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 5Wcm
-2, range is 10cm, and operating air pressure is 10Pa, and the thickness of the Cu film of preparation is 250nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 1000 ℃, and the temperature in Ga source is 800 ℃, and operating air pressure is 2Pa, and the thickness of the In-Ga film of preparation is 600nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.59; Cu-In-Ga alloy film and simple substance Se source were reacted 1800 seconds under 450 ℃, prepare the CIGS film, with prepared CIGS film and H
2The S source obtains the CIGSS film 600 ℃ of reactions 300 seconds, and wherein the S atomicity is 0.1 with the ratio of S and Se atomicity sum.
Embodiment 8:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 5Wcm
-2, range is 10cm, and operating air pressure is 10Pa, and the thickness of the Cu film of preparation is 250nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 1000 ℃, and the temperature in Ga source is 800 ℃, and operating air pressure is 20Pa, and the thickness of the In-Ga film of preparation is 600nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.59; Cu-In-Ga alloy film and simple substance Se source were reacted 100 seconds under 500 ℃, prepare the CIGS film, with prepared CIGS film and H
2The S source obtains the CIGSS film 500 ℃ of reactions 3000 seconds, and wherein the S atomicity is 0.85 with the ratio of S and Se atomicity sum.
Embodiment 9:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 2Wcm
-2, range is 8cm, and operating air pressure is 5Pa, and the thickness of the Cu film of preparation is 300nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 1800 ℃, and the temperature in Ga source is 1200 ℃, and operating air pressure is 5Pa, and the thickness of the In-Ga film of preparation is 800nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.48; Cu-In-Ga alloy film and simple substance Se source were reacted 900 seconds under 500 ℃, prepare the CIGS film, with prepared CIGS film and H
2The S source obtains the CIGSS film 500 ℃ of reactions 900 seconds, and wherein the S atomicity is 0.5 with the ratio of S and Se atomicity sum.
Embodiment 10:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 2Wcm
-2, range is 8cm, and operating air pressure is 5Pa, and the thickness of the Cu film of preparation is 300nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 1500 ℃, and the temperature in Ga source is 1000 ℃, and operating air pressure is 10Pa, and the thickness of the In-Ga film of preparation is 700nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.50; Cu-In-Ga alloy film and simple substance Se source were reacted 1800 seconds under 500 ℃, obtain out the CIGS film, wherein the S atomicity is 0 with the ratio of S and Se atomicity sum.
Embodiment 11:
On the soda-lime-silica glass of plating molybdenum (Mo), prepare the Cu film with the sputter of Cu target, wherein Sputtering power density is 2Wcm
-2, range is 8cm, and operating air pressure is 5Pa, and the thickness of the Cu film of preparation is 300nm; Adopt In source and Ga source hydatogenesis In-Ga film, wherein the temperature in In source is 1000 ℃, and the temperature in Ga source is 1000 ℃, and operating air pressure is 20Pa, and the thickness of the In-Ga film of preparation is 600nm; In the prepared Cu-In-Ga alloy film, Cu/ (In+Ga)=0.55; With Cu-In-Ga alloy film and H
2The S source obtains the CIGS film 500 ℃ of reactions 1800 seconds, and wherein the S atomicity is 1.0 with the ratio of S and Se atomicity sum.
Claims (7)
1. the preparation method of a light absorption layer of Cu-In-Ga-Se-S thin film solar cell is characterized in that adopting first the compound method of sputter and evaporation to prepare copper indium gallium metal precursor film, then introduces element sulphur on the Copper Indium Gallium Selenide surface, specifically may further comprise the steps:
(a) prepare the Cu film by magnetron sputtering method under normal temperature on the substrate, the sputtering condition of employing is: Sputtering power density is 0.2Wcm
-2～10Wcm
-2, range is 4cm～20cm, and operating air pressure is 0.05Pa～20Pa, and the thickness of Cu film is 50nm～350nm;
(b) prepare the In-Ga film on the surface of the Cu film of step (a) preparation by evaporation, form the Cu-In-Ga alloy film, evaporation source is In source and Ga source or In-Ga alloy source, and the evaporation source temperature is 400 ℃～1800 ℃, and operating air pressure is 0.02Pa～200Pa; The ratio of Cu atomicity and In and Ga atomicity sum is 0.4～1.0 in the Cu-In-Ga alloy film of preparation, i.e. 0.4≤Cu/ (In+Ga)≤1.0, and the thickness of In-Ga film is 100nm～800nm;
(c) then with Cu-In-Ga alloy film and solid-state Se simple substance or gaseous state H
2The reaction of Se source generates CIGS thin-film, and reaction temperature is 350 ℃～600 ℃, and the reaction time is 5 seconds～3600 seconds;
(d) CIGS thin-film and solid-state S simple substance or the gaseous state H that at last step (c) are generated
2The reaction of S source generates Cu-In-Ga-Se-S light-absorption layer film, and reaction temperature is 350 ℃～600 ℃, and the reaction time is 5 seconds～3600 seconds.
2. by preparation method claimed in claim 1, it is characterized in that Sputtering power density is 0.5Wcm
- 2～5Wcm
-2, range is 5cm～15cm, and operating air pressure is 0.2Pa～10Pa, and the thickness that magnetron sputtering method prepares the Cu film is 80-280nm.
3. according to preparation method claimed in claim 1, it is characterized in that evaporation source is In source and Ga source, the evaporation source temperature is 600 ℃～1600 ℃, and operating air pressure is 0.2Pa～20Pa; The thickness that evaporation prepares the In-Ga film is 200-600nm; 0.6≤Cu/ (In+Ga)≤0.95 in preparation Cu-In-Ga alloy film.
4. according to preparation method claimed in claim 1, it is characterized in that Cu-In-Ga precursor film and solid-state Se simple substance or gaseous state H in the step (c)
2Se source reaction temperature is 450 ℃～570 ℃, and the reaction time is 300 seconds～1800 seconds.
5. according to preparation method claimed in claim 1, it is characterized in that CIGS film and solid-state S simple substance or gaseous state H in the step (d)
2S source reaction temperature is 450 ℃～570 ℃, and the reaction time is 50 seconds～1800 seconds.
6. according to preparation method claimed in claim 1, the ratio that it is characterized in that S atomicity and S and Se atomicity sum in the prepared CIGSS light absorbing zone film is for greater than 0 less than 1, i.e. 0＜S/ (S+Se)＜1.0.
7. according to preparation method claimed in claim 1, it is characterized in that the ratio of S atomicity and S and Se atomicity sum is 0.05≤S/ (S+Se)≤0.35 in the prepared CIGSS light absorbing zone film.
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| CN101982561A (en) * | 2010-09-21 | 2011-03-02 | 陕西科技大学 | CIGS thin film material with chalcopyrite structure and high light absorption coefficient and preparation method thereof |
| CN102347401A (en) * | 2011-09-02 | 2012-02-08 | 普乐新能源（蚌埠）有限公司 | Preparation method for copper indium gallium selenium film layer of solar cell |
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| CN102386283B (en) * | 2011-11-18 | 2013-05-22 | 陈群 | Method for preparing copper-indium-gallium-selenide (CIGS) solar photovoltaic cell |
| CN103014624B (en) * | 2012-12-18 | 2015-01-07 | 合肥工业大学 | Preparation method of light-absorbing film of solar cell |
| US9029737B2 (en) * | 2013-01-04 | 2015-05-12 | Tsmc Solar Ltd. | Method and system for forming absorber layer on metal coated glass for photovoltaic devices |
| US20140360864A1 (en) * | 2013-06-07 | 2014-12-11 | Tsmc Solar Ltd. | Apparatus and methods for forming chalcopyrite layers onto a substrate |
| CN103633182B (en) * | 2013-11-27 | 2017-04-12 | 上海富际新能源科技有限公司 | Cu-Im-Ga-S-Se-sensitized semiconductor anode solar cell and preparation method thereof |
| CN104037248A (en) * | 2014-07-08 | 2014-09-10 | 厦门大学 | CIGSS thin film material preparation method |
| CN110416367B (en) * | 2019-08-14 | 2020-12-01 | 尚越光电科技股份有限公司 | Method for preparing large-area uniform CIGS thin-film solar cell by using In-Ga alloy evaporation source |
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| CN101475315A (en) * | 2009-02-03 | 2009-07-08 | 泉州创辉光伏太阳能有限公司 | Preparation of yellow copper CIG selenide or sulfide semiconductor thin film material |
| CN101527332A (en) * | 2009-04-08 | 2009-09-09 | 华东师范大学 | Method for preparing efficient thin-film solar cell light absorption layer |
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