CN102956718A - Solar battery - Google Patents
Solar battery Download PDFInfo
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- CN102956718A CN102956718A CN2011102500200A CN201110250020A CN102956718A CN 102956718 A CN102956718 A CN 102956718A CN 2011102500200 A CN2011102500200 A CN 2011102500200A CN 201110250020 A CN201110250020 A CN 201110250020A CN 102956718 A CN102956718 A CN 102956718A
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- solar battery
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
The invention discloses a solar battery device. The solar battery device comprises a baseplate, a first semiconductor window layer, a second semiconductor window layer, an antireflection layer, a contacting layer and an electrode, wherein the baseplate comprises at least one III-V family solar battery structure of a p-n node surface, and the III-V family solar battery structure is positioned on the baseplate; the first semiconductor window layer is positioned on the III-V family solar battery structure, and the second semiconductor window layer is positioned on the first semiconductor window layer; the antireflection layer is positioned on the second semiconductor window layer, and the contacting layer is arranged in the antireflection layer and is positioned on the second semiconductor window layer; and the electrode is positioned on the contacting layer, and the material of the second semiconductor window does not contain aluminium.
Description
Technical field
The present invention relates to solar battery apparatus, especially about improving the solar battery apparatus of electrical performance.
Background technology
Because price of oil going up sky-high and environmental issue, solar cell is paid much attention to by market, and wherein again with the tool development potentiality of concentrating solar battery, the concentrating solar battery comprises the solar cell that mainly is made of three or five (III-V) family.Under the condition of optically focused not, the photoelectric conversion efficiency of this kind solar cell is high, has the condition that replaces conventional electric power.
At present general solar cell adopts the direct mode of evaporation on window layers (Window layer) of anti-reflecting layer (Anti-Reflection Coating, ARC), forms structure as shown in Figure 1.This solar cell comprises substrate 110; The III-V family solar battery structure 120 that comprises at least one p-n junction face (pn junction) is positioned on the substrate 110; Window layers 130 is positioned on the solar battery structure 120; Anti-reflecting layer 150 (comprising the first antireflection material layer 151 and the second antireflection material layer 152) is positioned on the first window layers 130; Contact layer 160 is located among the anti-reflecting layer 150 and is positioned on the window layers 130; And electrode 170 is positioned on the contact layer 160.
Summary of the invention
A kind of solar battery apparatus comprises: substrate; Comprise the III-V family solar battery structure of at least one p-n junction face, be positioned on the substrate; The first semiconductor window layer is positioned on the III-V family solar battery structure; The second semiconductor window layer is positioned on the first semiconductor window layer; Anti-reflecting layer is positioned on the second semiconductor window layer; Contact layer is located among the anti-reflecting layer and is positioned on the second semiconductor window layer; Electrode is positioned on the contact layer; Wherein the second semiconductor window composition of layer does not contain aluminium.
Description of drawings
Fig. 1: with the solar cell of the direct evaporation of anti-reflecting layer on window layers.
The electrical test data of the solar cell of Fig. 2: Fig. 1.
Fig. 3 A: solar cell of the present invention.
Fig. 3 B: the III-V family solar battery structure that comprises at least one p-n junction face that shows the solar cell of Fig. 3 A.
Fig. 4: the electrical test data of the solar cell of the present invention of the materials'use GaInP of the second window layers.
Fig. 5: the electrical test data of the solar cell of the present invention of the materials'use GaP of the second window layers.
Description of reference numerals
110: substrate
120: the III-V family solar battery structure that comprises at least one p-n junction face
130: window layers
150: anti-reflecting layer
151: the first antireflection material layers
152: the second antireflection material layers
160: contact layer
170: electrode
210: substrate
220: the III-V family solar battery structure that comprises at least one p-n junction face
230: the first window layers
240: the second window layers
250: anti-reflecting layer
251: titanium oxide (TiO
2) layer
252: aluminium oxide (Al
2O
3) layer
260: contact layer
270: electrode
Embodiment
Generally speaking the solar cell of three-five family's materials compositions has good generating effect, and it is electrical at the element of the solar cell of assessing three-five families (III-V family) material composition, for example when peak power output density (Pmd) or conversion efficiency (η), open circuit voltage (Voc), short-circuit current density (Jsc), fill factor, curve factor (Fill Factor, FF) particular importance.For the solar cell of earlier figures 1 structure, test it and be correlated with electrically its data such as Fig. 2.Shown by data, this kind structure easily causes element significantly to decay at the lower open circuit voltage (Voc) of high optically focused (multi sun), data show that open circuit voltage under the high optically focused (Voc) is by the 2.929V before the evaporation anti-reflecting layer 150, be down to the 2.875V behind the evaporation anti-reflecting layer 150, the 0.054V that descended, open circuit voltage under the high optically focused (Voc) is variation obviously.If can improve the problem that open circuit voltage (Voc) descends under this high optically focused, element electrically will be improved greatly.
Please refer to Fig. 3 A, for embodiments of the invention solar cell.At first, provide substrate 210; Afterwards, form in regular turn the III-V family solar battery structure 220 that comprises at least one p-n junction face, to be positioned on the substrate 210; The first window layers 230 is positioned on the solar battery structure 220; The second window layers 240 is positioned on the first window layers 230; Anti-reflecting layer 250 is positioned on the second window layers 240; Contact layer 260 is located among the anti-reflecting layer 250 and is positioned on the second window layers 240; And electrode 270 is positioned on the contact layer 260.Wherein substrate 210 can be Ge substrate or GaAs substrate, and comprises that the III-V family solar battery structure 220 of at least one p-n junction face can be unijunction face solar cell or many knots face solar cell.Solar battery structure 220 in the present embodiment is take binode face solar cell as example, its structure is shown in Fig. 3 B, have the lower battery 222 of close substrate 210 and away from the upper battery 224 of substrate 210,224 on lower battery 222 and upper battery are tied face (tunnel junction) structure 223 and are engaged to wear tunnel.Wherein play battery 222 to have a different electrical GaAs layer 222a by two-layer, 222b consists of, and upper battery has a different electrical GaInP layer 224a by two-layer, and 224b consists of.Wear tunnel knot face structure 223 and have a different electrical AlGaAs layer 223a by two-layer, 223b consists of.Electrically, wear tunnel knot face structure 223 and form the diode that oppositely is connected in series with lower battery 222 (or upper battery 224).With the present embodiment, the GaAs layer 222a of lower battery 222,222b are respectively p-type and N-shaped, the GaInP layer 224a of upper battery, and 224b is respectively p-type and N-shaped, and wears the AlGaAs layer 223a of tunnel knot face structure 223,223b is respectively N-shaped and p-type.The material of the first window layers 230 can be AlGaAs or AlInP, and thickness can be
Extremely
The material of the second window layers 240 for example can be GaP or GaInP for not containing the semi-conducting material of aluminium (Al), and thickness is for being lower than
The first window layers 230 and the second window layers 240 all can utilize metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) method to form.Anti-reflecting layer 250 can comprise the first antireflection material layer 251 near the second window layers 240, and the present embodiment is titanium oxide (TiO
2) layer, thickness is
Extremely
Reach the second antireflection material layer 252 away from the second window layers 240, the present embodiment is aluminium oxide (Al
2O
3) layer, thickness is
Extremely
Titanium oxide (the TiO of the first antireflection material layer 251
2) layer and the aluminium oxide (Al of the second antireflection material layer 252
2O
3) layer all can utilize electron beam (E-gun) to carry out evaporation and form.The material of contact layer 260 is required to be the semi-conducting material of low-energy band gap (band gap), form ohmic contact (ohmic contact) in order to contact layer 260 and electrode 270, and the lattice constant of contact layer 260 materials and the lattice constant of the second window layers 240 need be mated, to guarantee that contact layer 260 is in the quality of MOCVD growth.These contact layer 260 materials can be by GaAs, and the semi-conducting materials such as InGaAs consist of; The material of electrode 270 can be metal, such as the material group that is selected from gold, silver, aluminium, copper, nickel, germanium, titanium, platinum, palladium and chromium etc. and consists of.For this structure solar cell, test it and be correlated with electrically, its data such as Fig. 4 and Fig. 5, wherein Fig. 4 is the situation of the materials'use GaInP of the second window layers 240, and Fig. 5 is the situation of the materials'use GaP of the second window layers 240.Shown by Fig. 4 data, 2.968V before high optically focused (multi sun) descends open circuit voltage (Voc) by evaporation anti-reflecting layer 250, be down to the 2.959V behind the evaporation anti-reflecting layer 250,0.009V has only descended, with respect to Fig. 1 structure 0.054V that descended, this structure solar cell obtains obviously to improve at the lower open circuit voltage (Voc) of high optically focused (multi sun).And shown by Fig. 5 data, open circuit voltage under the high optically focused (Voc) is by the 2.947V before the evaporation anti-reflecting layer 250, be down to the 2.939V behind the evaporation anti-reflecting layer 250,0.008V has only descended, with respect to Fig. 1 structure 0.054V that descended, this structure solar cell obtains obviously to improve at the lower open circuit voltage (Voc) of high optically focused (multi sun).Show thus the structure shown in Fig. 3 A, namely one deck the second window layers 240 how long again on the first window layers 230 can make the open circuit voltage (Voc) of element under high optically focused can significantly not decay again.And short-circuit current density (Jsc) is also kept certain level, so element is electrically better.This is by calculating peak power output density, be peak power output density (Pmd)=open circuit voltage (Voc) x short-circuit current density (Jsc) x fill factor, curve factor (Fill Factor, FF), under high optically focused (multi sun), Fig. 1 structure is peak power output density (Pmd)=2.929x1762.083x0.892=4606.373 (mW/cm2) before the evaporation anti-reflecting layer as can be known.Can be calculated equally peak power output density (Pmd)=5540.643 (mW/cm2) behind the evaporation anti-reflecting layer, so behind the evaporation anti-reflecting layer with the evaporation anti-reflecting layer before peak power output density (Pmd) ratio be 5540.643 (mW/cm2)/4606.373 (mW/cm2)=1.203, namely peak power output density (Pmd) increases by 20.3%.But relatively, via to Fig. 4 and Fig. 5 identical calculations, can learn the structure shown in Fig. 3 A, peak power output density (Pmd) added value is respectively 33.8% and 33.6% behind the evaporation anti-reflecting layer, greatly increases than 20.3% of Fig. 1 structure.Its reason is that the material of the second window layers 240 is not for containing the semi-conducting material of aluminium (Al), with enforcement of the present invention such as GaP or GaInP, be the non-material that contains aluminium (Al), utilization increases this in the first window layers 230 and does not contain the second window layers 240 of aluminium (Al), can prevent at evaporation anti-reflecting layer 250 (TiO
2Layer and Al
2O
3Layer) in the process, the TiO in the AlGaAs of the first window layers 230 or the Al element among the AlInP and the anti-reflecting layer 250
2Layer reacts, otherwise the AlGaAs of the first window layers 230 or Al element and TiO among the AlInP
2Layer reacts, and can make the Al element oxidation of the first window layers, causes Voc on the low side.So can effectively slow down the infringement that when evaporation anti-reflecting layer 250, the first window layers 230 (AlGaAs or AlInP) is caused, reach the effect of protection component, and then the efficient of lift element.Based on this principle, the band gap of the second window layers 240 (energy band gap) does not need band gap (the energy band gap) height than the first window layers 230, that is the material of the second window layers 240 selects not to be subject to the consideration of band gap, can select band gap greater than the second window layers 240 materials of the band gap of the first window layers 230, also can select band gap to be not more than the second window layers 240 materials of the band gap of (namely being less than or equal to) first window layers 230.And the thickness of the second window layers 240 tries not too thickly, preferably is lower than
The best is to be lower than
Reduce the usefulness of solar cell in order to avoid absorb incident ray.In addition, although the second thinner window layers 240 and beneath the first window layers 230 still may have lattice constant not mate the situation of (lattice mismatch), but the second thin window layers 240 more easily produces strain, makes the lattice constant of the second thin window layers 240 and beneath the first window layers 230 more consistent.If the second window layers 240 thickness are too thick, it is large that the stress of the second window layers 240 becomes, and the second window layers 240 can be returned to original lattice constant, and lattice defect (defect) will produce.Therefore the second thinner window layers 240 for and not mating of lattice constant of 230 of the first window layers preferably tolerance is arranged.
Above-described embodiment only is illustrative principle of the present invention and effect thereof, but not is used for restriction the present invention.Any persons of ordinary skill in the technical field of the present invention all can be in the situation that without prejudice to know-why of the present invention and spirit, and above-described embodiment is made amendment and changed.Therefore the scope of the present invention such as claim define and are as the criterion.
Claims (10)
1. solar battery apparatus comprises:
Substrate;
Comprise the III-V family solar battery structure of at least one p-n junction face, be positioned on this substrate;
The first semiconductor window layer is positioned on this III-V family solar battery structure;
The second semiconductor window layer is positioned on this first semiconductor window layer;
Anti-reflecting layer is positioned on this second semiconductor window layer;
Contact layer is located among this anti-reflecting layer and is positioned on the second semiconductor window layer; And
Electrode is positioned on this contact layer;
Wherein this second semiconductor window composition of layer does not contain aluminium.
2. solar battery apparatus as claimed in claim 1, wherein the material of this first semiconductor window layer is AlGaAs or AlInP.
3. solar battery apparatus as claimed in claim 1, wherein the material of this second semiconductor window layer is GaP or GaInP.
4. solar battery apparatus as claimed in claim 1, wherein the thickness of this first semiconductor window layer is yes
Extremely
And/or wherein the thickness of this second semiconductor window layer for being lower than
5. solar battery apparatus as claimed in claim 1, wherein this solar battery structure is unijunction face solar cell or many knots face solar cell.
6. solar battery apparatus as claimed in claim 1, wherein this solar battery structure is binode face solar cell, have near this substrate and by two-layer and have a lower battery that different electrical GaAs consists of, and have a upper battery that different electrical GaInP consists of away from this substrate and by two-layer.
7. solar battery apparatus as claimed in claim 1, wherein this substrate is Ge substrate or GaAs substrate.
8. solar battery apparatus as claimed in claim 1, wherein this anti-reflecting layer comprises near the titanium oxide layer of this second semiconductor window layer and away from the alumina layer of this second semiconductor window layer.
9. solar battery apparatus as claimed in claim 8, wherein the thickness of this titanium oxide layer is
Extremely
The thickness of this alumina layer is
Extremely
10. solar battery apparatus as claimed in claim 1, wherein the energy gap of this second semiconductor window layer is not more than the energy gap of this first semiconductor window layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102500200A CN102956718A (en) | 2011-08-29 | 2011-08-29 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102500200A CN102956718A (en) | 2011-08-29 | 2011-08-29 | Solar battery |
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| Publication Number | Publication Date |
|---|---|
| CN102956718A true CN102956718A (en) | 2013-03-06 |
Family
ID=47765253
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|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110839349A (en) * | 2018-06-18 | 2020-02-25 | 奥塔装置公司 | Thin film flexible optoelectronic devices including single lattice matched dilute nitride junctions and methods of fabrication |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255580B1 (en) * | 1999-04-23 | 2001-07-03 | The Boeing Company | Bilayer passivation structure for photovoltaic cells |
| CN1682378A (en) * | 2002-09-11 | 2005-10-12 | 松下电器产业株式会社 | Solar cell and its manufacturing method |
| CN101459200A (en) * | 2007-12-14 | 2009-06-17 | 中国电子科技集团公司第十八研究所 | Flexible CIGS thin-film solar cell and absorption layer preparation thereof |
| US20100218819A1 (en) * | 2007-10-05 | 2010-09-02 | The University Court Of The University Of Glasgow | Semiconductor optoelectronic devices and methods for making semiconductor optoelectronic devices |
-
2011
- 2011-08-29 CN CN2011102500200A patent/CN102956718A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255580B1 (en) * | 1999-04-23 | 2001-07-03 | The Boeing Company | Bilayer passivation structure for photovoltaic cells |
| CN1682378A (en) * | 2002-09-11 | 2005-10-12 | 松下电器产业株式会社 | Solar cell and its manufacturing method |
| US20100218819A1 (en) * | 2007-10-05 | 2010-09-02 | The University Court Of The University Of Glasgow | Semiconductor optoelectronic devices and methods for making semiconductor optoelectronic devices |
| CN101459200A (en) * | 2007-12-14 | 2009-06-17 | 中国电子科技集团公司第十八研究所 | Flexible CIGS thin-film solar cell and absorption layer preparation thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110839349A (en) * | 2018-06-18 | 2020-02-25 | 奥塔装置公司 | Thin film flexible optoelectronic devices including single lattice matched dilute nitride junctions and methods of fabrication |
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Application publication date: 20130306 |