CN117396013A - Perovskite solar cell and preparation method thereof - Google Patents
Perovskite solar cell and preparation method thereof Download PDFInfo
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- CN117396013A CN117396013A CN202311591563.8A CN202311591563A CN117396013A CN 117396013 A CN117396013 A CN 117396013A CN 202311591563 A CN202311591563 A CN 202311591563A CN 117396013 A CN117396013 A CN 117396013A
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000010521 absorption reaction Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 150000004706 metal oxides Chemical class 0.000 claims description 25
- 229910044991 metal oxide Inorganic materials 0.000 claims description 24
- 230000005525 hole transport Effects 0.000 claims description 22
- 238000002347 injection Methods 0.000 claims description 22
- 239000007924 injection Substances 0.000 claims description 22
- 239000002070 nanowire Substances 0.000 claims description 19
- 238000011049 filling Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000002905 metal composite material Substances 0.000 claims description 9
- 229920002367 Polyisobutene Polymers 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000004588 polyurethane sealant Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 229920002379 silicone rubber Polymers 0.000 claims description 4
- 239000004945 silicone rubber Substances 0.000 claims description 4
- 241000251468 Actinopterygii Species 0.000 claims description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000002052 molecular layer Substances 0.000 claims description 3
- FSVVWABMXMMPEE-UHFFFAOYSA-N molybdenum silver Chemical compound [Mo][Ag][Mo] FSVVWABMXMMPEE-UHFFFAOYSA-N 0.000 claims description 3
- 239000002313 adhesive film Substances 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 136
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 10
- 239000000047 product Substances 0.000 description 9
- 230000002950 deficient Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000003475 lamination Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229920005549 butyl rubber Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- IBAHLNWTOIHLKE-UHFFFAOYSA-N cyano cyanate Chemical compound N#COC#N IBAHLNWTOIHLKE-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 125000002577 pseudohalo group Chemical group 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
Abstract
The invention discloses a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a first solar cell unit, an insulating layer and a second solar cell unit which are sequentially stacked, wherein the effective area of the first solar cell unit and the effective area of the second solar cell unit are mutually overlapped, and the projections of the ineffective area of the first solar cell unit and the ineffective area of the second solar cell unit on the insulating layer are mutually overlapped. Compared with the prior art, the perovskite solar cell has the advantage that the efficiency is remarkably improved.
Description
Technical Field
The invention belongs to the technical field of photovoltaic module production technology and manufacturing thereof, and particularly relates to a perovskite solar cell and a preparation method thereof.
Background
Photovoltaic solar power generation is an important way for solving the current energy crisis and environmental pollution as a renewable green energy source, and perovskite solar cells are low in cost because of the used raw materials and manufacturing methods. Their high absorption coefficient enables ultrathin films of about 500nm to absorb the complete visible solar spectrum. Perovskite solar cells formed by the combination of low cost, high efficiency, thin, lightweight, and flexible solar modules have been used to power low power wireless electronic devices.
In the production process of the traditional perovskite solar cell, due to defects of perovskite materials, defects after film formation, and the fact that perovskite needs high-temperature annealing crystallization in the production process, physical properties of precursor solutions and surface characteristics/temperature of substrates can influence the morphology of a film, and the perovskite device structure is unstable due to the fact that the perovskite is stacked due to the fact that the perovskite materials are unstable due to the fact that the perovskite materials are, the production process and the production environment are the same, the yield of the final product of the produced perovskite solar module is greatly affected, the manufacturing cost is increased, and the perovskite contains harmful lead, so that the cost of processing defective products in a large batch in the later period is high.
In addition, in the traditional perovskite solar cell, the current of the whole assembly of the cell assemblies with the two stacked ends connected in series is limited by the lowest current of the two groups of cells, the assembly efficiency is low, the process requirement is high, the preparation is complex, and the requirement on the research, development and production cost is high. The common process of the parallel four-terminal laminated battery assembly is that a first perovskite layer is upwards prepared on the same substrate, then a transparent insulating layer is covered, then a second perovskite layer is prepared on the first perovskite layer, and then glass is covered for packaging.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a perovskite solar cell and a preparation method thereof.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
in one aspect, the invention provides a perovskite solar cell, which comprises a first solar cell unit, a light-transmitting insulating layer and a second solar cell unit which are sequentially stacked along a first direction, wherein the first solar cell unit and the second solar cell unit are respectively used for absorbing light with a first wavelength and light with a second wavelength, and the first wavelength is the same as or different from the second wavelength;
the first solar battery unit comprises a plurality of first sub-batteries which are arranged in series and/or in parallel, the plurality of first sub-batteries are arranged in parallel along a second direction, and the second solar battery unit comprises a plurality of second sub-batteries which are arranged in series and/or in parallel, and the plurality of second sub-batteries are also arranged in parallel along the second direction;
and, any one of the plurality of first subcells and the plurality of second subcells includes a first region and a second region disposed along a second direction, the first region includes an effective region and a light leakage region disposed along the second direction, the effective region includes a plurality of subregions, any two adjacent subregions are isolated from each other by the light leakage region, the second region is an ineffective region for absorbing light of a specified wavelength and generating electric energy, the light leakage region is at least permeable to light other than the light of the specified wavelength, the ineffective region is a photovoltaic dead region and permeable to light, the plurality of subregions are electrically connected with the ineffective region and disposed in parallel, and the light of the specified wavelength is light of the first wavelength or light of the second wavelength;
the top electrode of each first sub-cell is opposite to the top electrode of the corresponding second sub-cell, and the projections of the effective area of each first sub-cell and the effective area of the corresponding second sub-cell on the insulating layer are overlapped with each other, and the projections of the ineffective area in the first solar cell unit and the ineffective area of the second solar cell unit on the insulating layer are also overlapped with each other;
wherein the first direction is perpendicular to a second direction, and the second direction is a direction parallel to the surface of the insulating layer.
In one embodiment, the first sub-cell includes a first substrate, a first transparent bottom electrode, a first hole transport layer, a first perovskite absorption layer, a first electron transport layer, a first electron injection layer, and a first top electrode stacked along a first direction;
the second sub-cell includes a second substrate, a second transparent bottom electrode, a second hole transport layer, a second perovskite absorption layer, a second electron transport layer, a second electron injection layer, and a second top electrode stacked along the first direction.
In an embodiment, the first transparent bottom electrode, the first hole transport layer, the first perovskite absorption layer, the first electron transport layer, the first electron injection layer and the first top electrode are removed in the light leakage region of the first subcell, and a scale-like roughness structure is formed on a surface of one side of the first substrate away from the insulating layer.
In one embodiment, the area ratio of the effective region to the light leakage region in each of the subcells is (50 to 75): (25-50).
In one embodiment, the area ratio of the active region to the inactive region contained in any one of the first solar cell unit and the second solar cell unit is (90 to 99.99) to (0.01 to 10).
In one embodiment, the active area and the light leakage area in each sub-cell cooperate to form an interdigital structure in the first direction.
In an embodiment, the first wavelength light and the second wavelength light are both short wavelength sunlight or long wavelength sunlight, or the first wavelength light is either one of short wavelength sunlight and long wavelength sunlight, and the second wavelength light is the other one.
In one embodiment, the band gap of the first solar cell unit is 1.7 eV-1.9 eV, and the band gap of the second solar cell unit is 1.7 eV-1.9 eV. Alternatively, the band gap of the first solar cell unit is 0.9 eV-1.2 eV, and the band gap of the second solar cell unit is 0.9 eV-1.2 eV. Alternatively, the band gap of the first solar cell unit is 1.7 eV-1.9 eV, and the band gap of the second solar cell unit is 0.9 eV-1.2 eV.
In an embodiment, the first top electrode includes two or more of a metal, a metal oxide, and a metal composite structure.
In an embodiment, the second top electrode includes two or more of a metal oxide, a metal nanowire, and a metal mesh.
In an embodiment, the material of the first top electrode includes any one of gold, copper, molybdenum, nickel, silver and aluminum.
In an embodiment, the material of the first top electrode includes at least one of ITO, FTO, IWO, AZO, IGO and IZO.
In an embodiment, a conductive layer is further disposed on the light leakage region of the first solar cell unit, where the conductive layer includes at least one of a metal nanowire, a carbon nanotube, and a grid metal.
In an embodiment, the first top electrode comprises a molybdenum copper composite structure, a molybdenum silver composite structure, or a nickel copper composite structure.
In one embodiment, the height of the metal composite structure in the first top electrode is 12nm to 50nm.
In an embodiment, the metal nanowire in the second top electrode comprises any one of a nickel-shell copper core, a molybdenum-shell silver core, and a nickel-shell silver core nanowire.
In one embodiment, the height of the metal nano layer formed by the metal nano wire in the second top electrode is 60 nm-130 nm.
In an embodiment, the material of the metal mesh in the second top electrode includes any one of gold, copper, molybdenum, nickel, silver and aluminum.
In one embodiment, the thickness of the metal mesh in the second top electrode is 15nm to 80nm.
In one embodiment, the insulating layer includes an inner filler layer and a bezel sealing layer disposed around the filler.
In an embodiment, the perovskite solar cell further comprises a light guide plate, the light guide plate is arranged on one side surface of the second substrate far away from the insulating layer, and a light reflecting structure is arranged on one side surface of the light guide plate far away from the insulating layer.
In an embodiment, the material of the inner filling layer includes at least one of EVA film, POE film, silica gel, poly, and polyisobutylene.
In an embodiment, the material of the frame sealing layer includes at least one of UV glue, butyl glue, silane liquid sealant, silicone rubber sealant and polyurethane sealant.
In one embodiment, the inner filling further comprises scattering particles, the percentage of the scattering particles to the weight of the inner filling being 0.5% -20%.
The invention also provides a preparation method of the perovskite solar cell, which comprises the following steps:
a first step of fabricating a first solar cell unit, comprising:
sequentially forming a first transparent bottom electrode, a first hole transport layer, a first perovskite absorption layer, a first electron transport layer, a first electron injection layer and a first top electrode on a first substrate to prepare a precursor structure of a first solar cell unit;
processing the precursor structure of the first solar cell unit to form a plurality of first sub-cells;
defining a first region and a second region in each first sub-cell, defining an effective region and a light leakage region in the first region, and etching and removing a first transparent bottom electrode, a first hole transport layer, a first perovskite absorption layer, a first electron transport layer, a first electron injection layer and a first top electrode in the light leakage region;
a second step of fabricating a second solar cell unit, comprising:
sequentially forming a second transparent bottom electrode, a second hole transport layer, a second perovskite absorption layer, a second electron transport layer, a second electron injection layer and a second top electrode on a second substrate to prepare a precursor structure of a second solar cell unit;
processing the precursor structure of the second solar cell unit to form a plurality of first sub-cells;
defining a first region and a second region in each second sub-cell, defining an effective region and a light leakage region in the first region, and etching and removing a second transparent bottom electrode, a second hole transport layer, a second perovskite absorption layer, a second electron transport layer, a second electron injection layer and a second top electrode in the light leakage region;
the step of manufacturing the insulating layer comprises the following steps:
forming a frame sealing layer on the outer periphery of the inner filling layer;
and laminating the first solar cell unit, the insulating layer and the second solar cell unit in sequence.
In one embodiment, the preparation method further comprises: and a step of disposing a light guide plate on a surface of a side of the second solar cell unit remote from the insulating layer.
Compared with the prior art, the invention has the advantages that: the perovskite solar cell is simple in preparation, and the projection of the invalid area of the first solar cell unit and the projection of the invalid area of the second solar cell unit are mutually overlapped on the insulating layer, so that the irradiation light source is transmitted to the back surface of the second solar cell unit through the light guide plate to be reflected, the absorption capacity of the effective area of the second solar cell unit is improved, light energy is effectively utilized, photoelectric conversion efficiency is improved, and the efficiency of the perovskite solar component is improved.
Drawings
Fig. 1 is a top view of a perovskite solar cell provided by the invention;
FIG. 2 is a schematic view of a portion of a first solar cell unit according to the present invention;
FIG. 3 is another schematic view of a first solar cell unit according to the present invention;
fig. 4 is a schematic diagram of an etched light leakage region S1 provided in the present invention;
reference numerals illustrate: 110. a first solar cell unit; 111. a first sub-cell; 112. a first substrate; 113. a first transparent bottom electrode; 114. a first hole transport layer; 115. a first perovskite absorber layer; 116. a first electron transport layer; 117. a first electron injection layer; 118. a first top electrode; 120. a second solar cell unit; 121. a second sub-cell; 122. a second substrate; 123. a second transparent bottom electrode; 124. a second hole transport layer; 125. a second perovskite absorber layer; 126. a second electron transport layer; 127. a second electron injection layer; 128. a second top electrode; 130. an insulating layer.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical scheme, the implementation process, the principle and the like are further explained as follows.
Example 1
Referring to fig. 1, in the perovskite solar cell provided in this embodiment, the perovskite solar cell includes a first solar cell unit 110, a second solar cell unit 120 and an insulating layer 130 that are sequentially stacked, where the first solar cell unit 110 and the second solar cell unit 120 are both used for absorbing short-wavelength sunlight or both used for absorbing long-wavelength sunlight, or the first solar cell unit 110 is used for absorbing short-wavelength sunlight, and the second solar cell unit 120 is used for absorbing long-wavelength sunlight, in this embodiment, the light wavelength of the short-wavelength sunlight is 300nm to 800nm, and the light wavelength of the sunlight is 500nm to 1200nm.
Specifically, the perovskite solar cell includes a first solar cell 110, a light-transmitting insulating layer 130, and a second solar cell 120 sequentially stacked along a first direction, where the first solar cell 110 and the second solar cell 120 are respectively configured to absorb light of a first wavelength and light of a second wavelength, and the first wavelength is the same as or different from the second wavelength;
the first solar cell 110 includes a plurality of first sub-cells 11l arranged in series and/or parallel, the plurality of first sub-cells 111 are arranged in parallel along the second direction, and the second solar cell 120 includes a plurality of second sub-cells 121 arranged in series and/or parallel, and the plurality of second sub-cells 121 are also arranged in parallel along the second direction.
The first solar cell 110 includes a plurality of first sub-cells 111 connected in series or parallel, and the first sub-cells 111 include a first substrate 112, a first transparent bottom electrode 113, a first hole transport layer 114, a first perovskite absorption layer 115, a first electron transport layer 116, a first electron injection layer 117, and a first top electrode 118 that are stacked. The second solar cell unit 120 includes a plurality of second subcells 121 connected in series or parallel, and the second subcell 121 includes a second substrate 122, a second transparent bottom electrode 123, a second hole transporting layer 124, a second perovskite absorbing layer 125, a second electron transporting layer 126, a second electron injecting layer 127, and a second top electrode 128 which are stacked.
And, any one of the plurality of first subcells 111 and the plurality of second subcells 121 includes a first region and a second region that are disposed along a second direction, the first region includes an effective region and a light leakage region that are disposed along the second direction, the effective region includes a plurality of sub-regions, any two adjacent sub-regions are separated from each other by the light leakage region, the second region is an ineffective region for absorbing light of a specified wavelength and generating electric energy, the light leakage region is at least permeable to light other than light of the specified wavelength, the ineffective region is a photovoltaic dead region and permeable to light, and the plurality of sub-regions are electrically connected and disposed in parallel with the ineffective region, and the light of the specified wavelength is light of the first wavelength or light of the second wavelength.
As shown in fig. 1 to 3, the active area b1 of the first sub-cell, the inactive area a1 of the first sub-cell, and the active area b2 of the second sub-cell, the inactive area a2 of the second sub-cell. The ineffective areas a1 and a2 are also called photovoltaic dead areas, and refer to areas incapable of serving as solar cells, and can be etched by laser or the like for achieving the purposes of series-parallel connection and the like. The effective areas b1 and b2 are areas where power generation is actually effective.
The top electrode of each first sub-cell 111 is disposed opposite to the top electrode of the corresponding second sub-cell 121, and the projections of the active area b1 of each first sub-cell 111 and the active area b2 of the corresponding second sub-cell 121 on the insulating layer 130 overlap each other, and the projections of the inactive area a1 in the first solar cell 110 and the inactive area a2 of the second solar cell 120 on the insulating layer 130 also overlap each other; wherein the first direction is perpendicular to a second direction, and the second direction is parallel to the surface of the insulating layer 130.
As shown in fig. 2 and 3, the effective area a1 of the first solar cell 110 includes a plurality of light leakage areas S1 arranged at intervals, and the area between the light leakage areas S1 is communicated with the ineffective area b1 to form a first sub-cell 11l of the first solar cell 110.
The effective region b1 may be formed by laser etching, specifically, a part of the perovskite film layer in the first solar cell unit is removed to form the light leakage region S1, and finally, the light leakage region S1 formed by laser etching in the effective region b1 is isolated into a plurality of compartments, and the plurality of compartments are connected in parallel through the ineffective region a1, so as to finally form the first subcell 111 in the first solar cell unit 110 as shown in fig. 3. As shown in fig. 3, the inactive area between the etched lines P1 to P3 is connected to the perovskite compartments to form sub-cells connected in parallel. The etched line P1 of the first solar cell 110 is connected to the active area from the side close to the etched line P2, or is connected to the active area from the middle position of P1 and P2 to P3. The P1 etching line is understood to be a line for cutting off the positive electrode, the P2 etching line is a line for etching perovskite and a functional layer to leak out of the positive electrode, and the P3 etching line is a line for cutting off the negative electrode to connect the negative electrode with the positive electrode.
In the perovskite solar cell 100 structure applying the technical scheme of the invention, the first solar cell 110 absorbs the light source with the designated wavelength, and the rest of the light source passes through the light leakage area S1 of the first sub-cell 111 in the first solar cell 110 and is absorbed by the second solar cell 120.
The perovskite solar cell further comprises a light guide plate, the light guide plate is arranged on one side surface of the second substrate 122 far away from the insulating layer 130, and a light reflecting structure (not shown in the figure) is arranged on one side surface of the light guide plate far away from the insulating layer 130, and the light reflecting structure is a metal film layer with a higher reflection coefficient, which is easy to understand. And the light guide plate is used for uniformly radiating light, and the back of the second solar cell 120 absorbs the light source transmitted by the light guide plate from the ineffective area and the reflection light source of which the side is refracted into the light guide plate, so that the photoelectric conversion efficiency of the second solar cell 120 is improved.
Specifically, the light guide plate can be an acrylic flat plate, the light guide plate is an acrylic flat plate with smooth surface formed by pressing propylene through an injection molding method, then diffusion points are arranged on the acrylic flat plate, the diffusion points are made of high-reflection and non-light-absorption materials, and round or square diffusion points can be printed on the bottom surface of the acrylic flat plate in a screen printing mode, so that light can be diffused. When the light reaches the diffusion point, the light is reflected in various directions, and then the reflection condition is destroyed, and the light is emitted from the front surface of the light guide plate. In order to achieve the purpose of uniform light emission, the distances between the diffusion points are different, namely, the densities among the diffusion points are different, and the sizes of the diffusion points are different, so that the reflection probability of light in all directions is approximately the same. The light reflecting structure can reflect the light exposed from the ground back to the light guide plate, so that the light utilization rate is improved.
The projection of the inactive area of the first solar cell 110 and the inactive area of the second solar cell 120 in the first direction on the insulating layer 130 are overlapped with each other, so that the irradiation light source passes through the inactive area al of the first solar cell 110 and the inactive area a2 of the second solar cell 120, and is reflected to the back surface of the second solar cell 120 through the light guide plate, thereby improving the absorption capacity of the active area of the second solar cell 120, effectively utilizing the light energy, and improving the photoelectric conversion efficiency. The perovskite solar cell provided in the embodiment can improve the efficiency of a perovskite solar module.
The band gap of the first solar cell 110 and the second solar cell 120 may be 1.7eV to 1.9eV, and the band gap of the first solar cell 110 and the second solar cell 120 may be 0.9eV to 1.2eV. Or the band gap of the first solar cell 110 is 1.7eV to 1.9eV, and the band gap of the second solar cell 120 is 0.9eV to 1.2eV.
More specifically, the area ratio of the effective area to the light leakage area of the first sub-cell 111 and the second sub-cell 121 may be (50:50) to (75:25). Preferably, the area ratio of the effective area to the light leakage area is 70:30. The area ratio of the active region to the inactive region contained in either one of the first solar cell 110 and the second solar cell 120 is (90:10) to (99.99:0.01).
Specifically, in a preferred embodiment, the first substrate 112 and the second substrate 122 have a thickness of 0.7mm to 5mm and an area of 0.02m 2 ～4m 2 . The thickness of the first perovskite absorption layer 115 and the second perovskite absorption layer 125 is 100nm to 5000nm. The first and second transparent bottom electrodes 113 and 123 include, but are not limited to, ITO, FTO, IWO, AZO, IGO and IZO, etc., and the thicknesses of the first and second transparent bottom electrodes 113 and 123 are 50nm to 2000nm.
In a preferred embodiment, the first top electrode 118 may be made of two or more of metal, metal oxide and metal composite structure, and the first top electrode 118 may be formed by compositing metal and metal oxide or by compositing metal oxide and metal composite structure.
Of course, in a preferred embodiment of the present application, the first top electrode 118 may also be a three-layer composite structure of metal oxide, metal oxide, or may also be a three-layer composite structure of metal oxide, metal composite structure, metal oxide.
The thickness of the first top electrode 118 in the first solar cell 110 is 19nm to 100nm. The metal oxide forming the first top electrode includes, but is not limited to, ITO, FTO, IWO, AZO, IGO, IZO, etc., the oxide is a common oxide semiconductor, and the thickness of the metal oxide formed on the first top electrode is 12 nm-100 nm; the material of the metal forming the first top electrode comprises, but is not limited to, gold, copper, molybdenum, nickel, silver, aluminum and the like, and the thickness of the metal formed on the first top electrode is 7 nm-50 nm; the metal composite structure forming the first top electrode not only comprises a molybdenum-copper composite structure, a molybdenum-silver composite structure and a nickel-copper composite structure, but also comprises a three-layer composite structure: the thickness of the metal composite structure forming the first top electrode is 12 nm-50 nm.
In a preferred embodiment, after the light leakage area S1 of the first solar cell unit 110 is etched by laser, a metal layer with a transmittance greater than 85% may be deposited to improve the overall lateral conductivity of the first solar cell unit 111, where the metal layer may be formed by a single film layer of metal nanowire, carbon nanotube, or grid metal, or may be formed by matching two or more different materials of metal nanowire, carbon nanotube, and grid metal.
Specifically, as shown in fig. 4, the laser etching depth of the light leakage region S1 in the first solar cell 110 is formed by etching from the first bottom electrode 113 to the first top electrode 118, and in the light leakage region of the first subcell 111, the first transparent bottom electrode 113, the first hole transport layer 114, the first perovskite absorption layer 115, the first electron transport layer 116, the first electron injection layer 117 and the first top electrode 118 are removed, and a fish scale-like roughness is formed on the surface of the first substrate 112 on the side away from the insulating layer 130.
And etching and removing the glass surface of the light leakage area S1, wherein the etched fish scale-shaped rough surface is formed on the glass surface of the light leakage area S1, and the rough surface can improve the light source transmittance and the scattering degree.
The second top electrode 128 in the second solar cell unit 120 may be made of two or more materials among metal oxide, metal nanowire, and metal mesh.
Specifically, in a preferred embodiment of the present application, the second top electrode 128 has a multi-layer structure, which may be a double-layer or triple-layer structure, wherein the second top electrode 128 of the double-layer structure may be formed of a metal oxide and a metal nanotube, and the second top electrode 128 of the triple-layer structure may be formed of a metal oxide, a metal nanowire, a metal oxide, or may be formed of a metal oxide, a metal mesh, or a metal oxide.
The thickness of the second top electrode 128 in the second solar cell 120 is 60 nm-200 nm. The metal nano wires in the second top electrode 128 include, but are not limited to, a nickel-shell copper core, a molybdenum-shell silver core, a nickel-shell silver core, etc., and the height of the metal nano layer formed by the metal nano wires in the second top electrode 128 is 60nm to 130nm; the metal mesh in the second top electrode 128 includes, but is not limited to, metal mesh made of gold, copper, molybdenum, nickel, silver, aluminum, etc., and the thickness of the metal mesh is 15 nm-80 nm; the metal oxide in the second top electrode 128 includes any one of ITO, FTO, IWO, AZO, IGO and IZO, wherein, in a preferred embodiment, the metal oxide TCO in the second top electrode 128 has an average transmittance of greater than 85% and a sheet resistance of less than 10 Ω/mouth in the visible wavelength range of 400nm to 800 nm.
In a preferred embodiment of the present application, an insulating layer of a perovskite solar cell includes an inner filling layer and a frame sealing layer, wherein the frame sealing layer is disposed around the inner filling layer, and a material of the inner filling layer includes at least one of EVA film, POE film, silica gel, poly (styrene-CO-methyl methacrylate), and polyisobutylene. The frame sealing layer is made of materials including but not limited to UV glue, butyl glue, silane liquid sealant, silicone rubber sealant and polyurethane sealant.
Wherein, in a preferred embodiment, the silica gel, poly (styrene-CO-methyl methacrylate) and polyisobutylene of the inner filling layer can be added with TiO with 350nm scattering particles 2 The weight of the scattering particles accounts for 0.5% -20% of the total weight of the material. The transmittance of the materials is more than 90%, and the light source can more uniformly irradiate the second perovskite solar energy after the scattering particles are addedThe surface of the energy cell 120.
In a preferred embodiment, a perovskite solar cell includes a first solar cell unit 110, an insulating layer 120, and a second solar cell unit 120 that are stacked.
The first perovskite solar cell 110 is obtained by: and (3) carrying out data testing, power-on testing and other means on the perovskite component before lamination to primarily screen out defective products, wherein the perovskite component has the efficiency of more than 16% as the defective products and less than 16% as the defective products, and the component efficiency in the defective products is in the range of 10% -16% as the first perovskite solar cell unit 110.
The second perovskite solar cell unit 120 is obtained in such a way that: the perovskite solar cell with the top electrode structure different from that of the first perovskite solar cell 110 is adopted as the second perovskite solar cell 120, the second top electrode 128 meets the conditions that the average transmittance is more than 85% and the sheet resistance is less than 10 omega/mouth in the visible light wavelength range of 400-800 nm, and the perovskite component is subjected to data test, power-on test and other means before lamination to primarily screen out defective products, the perovskite component efficiency is more than 16% as good products, less than 16% as defective products, and the component efficiency in the defective products is within the range of 10-16% as the second perovskite solar cell 120.
The perovskite material in the perovskite absorption layer has an ABX3 type structure, and the crystal structure of the perovskite material can be a cubic lattice, a prismatic structure (trigonal system) or an orthorhombic structure.
Preferably, a in the ABX3 type structure represents one or more of ch3nh3+ (MA), nh2ch=nh2+ (FA), cs, or Rb; b represents one or more of Pb and Sn; x represents halogen or pseudohalogen; halogen is selected from Cl, br or I; pseudohalogen is selected from CN, thiocyanate (SCN), oxy-cyanide (OCN), or selenocyanocyanide (SeCN), etc. More preferably, the perovskite material has the general formula MAxFA1-xPbI3-aBra, MAxFA1-xPbI3-bClb, or MAxFA1-xPbBr3-cClc; wherein, the value of x is 0-1, and the values of a, b and c are all 0-3.
More specifically, in this embodiment, the light guide plate disposed on the second substrate 122 is an optical-grade acrylic or PC board, and the light guide points can be printed on the bottom surface of the optical-grade acrylic board by using a high-tech material with an extremely high refractive index and no light absorption by using laser engraving, V-shaped cross-grid engraving, and UV screen printing techniques.
The light irradiated from the front or side is absorbed by the optical acrylic plate, so that the light stays on the surface of the optical acrylic plate. When the light rays are emitted to each light guide point, the reflected light can be diffused towards each angle, and then the reflection condition is destroyed and emitted from the front surface of the light guide plate.
By arranging a plurality of light guide points with different densities and sizes, the line light source penetrating through the etching line P1 in the ineffective area b2 and the light source irradiated from the side surface can be converted into a surface light source, so that the light guide plate uniformly emits light. And the bottom of the light guide plate may further be provided with a reflective sheet, where the reflective sheet is used to reflect the light exposed from the bottom surface of the perovskite solar cell back into the light guide plate, so as to improve the light use efficiency, thereby further improving the absorbance of the back surface of the second solar cell unit 120 and further improving the photoelectric conversion efficiency.
Example 2
The preparation method of the perovskite solar cell provided in the embodiment specifically comprises the following steps:
s10, sequentially forming a first transparent bottom electrode 113, a first hole transport layer 114, a first perovskite absorption layer 115, a first electron transport layer 116, a first electron injection layer 117 and a first top electrode 118 on a first substrate 112 to obtain a precursor structure of a first solar cell unit 110, and etching the precursor structure of the first solar cell unit 110 to form a plurality of first sub-cells 111 connected in series or in parallel;
defining a first region and a second region in each of the first subcells (111), defining an effective region and a light leakage region in the first region, and etching and removing the first transparent bottom electrode 11, the first hole transport layer 114, the first perovskite absorption layer 115, the first electron transport layer 116, the first electron injection layer 117, and the first top electrode 118 in the light leakage region;
the total thickness of the first top electrode 118 is 75nm, and a metal oxide+metal structure is preferably used to form the first top electrode 118, wherein the metal oxide is used to deposit an IWO film layer of 50nm by a Reactive Plasma Deposition (RPD) process, and the metal layer is used to deposit copper (Cu) of 25nm by a direct current magnetron sputtering process. The metal layer in the first top electrode 118 has a certain specular reflection, and may reflect a part of the light source in the light leakage area.
And S20, etching the first sub-cell 111 into a light leakage area S1 by utilizing laser, and finally forming the first sub-cell 111 with the active area and the light leakage area alternately arranged. Specifically, the light leakage area is etched by using a laser upper light emitting mode, wherein the area ratio of the effective area to the light leakage area is preferably 70:30, namely the effective area is 42mm 2 The light leakage area is 18mm 2 。
S30, sequentially forming a second transparent bottom electrode 123, a second hole transport layer 124, a second perovskite absorption layer 125, a second electron transport layer 126, a second electron injection layer 127) and a second top electrode 128 on a second substrate 122 to obtain a precursor structure of a second solar cell unit 120, and etching the precursor structure of the second solar cell unit 120 to form a plurality of series or parallel second subcells 121;
defining a first region and a second region in each of the second subcells 121, defining an effective region and a light leakage region in the first region, and etching away the second transparent bottom electrode 123, the second hole transport layer 124, the second perovskite absorption layer 125, the second electron transport layer 126, the second electron injection layer 127 and the second top electrode 128 in the light leakage region;
the total thickness of the second top electrode 128 is 170nm, preferably, the second top electrode 128 is formed by a metal oxide+metal nanowire structure, wherein the metal oxide is deposited with an IWO film layer of 50nm by adopting a Reactive Plasma Deposition (RPD) process, the metal nanowire is a molybdenum-shell copper-core nanowire with a diameter of 40nm and a length of 60um, and is mixed with a proper amount of isopropanol to form a suspension solution, the suspension solution is coated into a wet film by adopting a slit coating mode, and the wet film is baked for 10 minutes at 50 ℃ to finally form a conductive film with a thickness of 120nm, a sheet resistance of 6 Ω/mouth and a visible light transmittance of more than 85%.
S40, preparing an insulating layer 130 on the surface of the second top electrode 128 of the second solar cell unit 120 prepared in S30, where the insulating layer 130 includes an internal filling layer and a frame sealing layer, and the frame sealing layer includes, but is not limited to, UV glue, butyl glue, silane liquid sealant, silicone rubber sealant, polyurethane sealant, and the like. The inner fill layer includes, but is not limited to, EVA film, POE film, silicone gel, poly (styrene-CO-methyl methacrylate), polyisobutylene, and the like. Wherein silica gel, poly (styrene-CO-methyl methacrylate) and polyisobutylene can be added with TiO with scattering particle of 350nm 2 The weight of the scattering particles accounts for 0.5% -20% of the total weight of the material. Specifically, butyl rubber coated by a dispenser is used as a frame sealing layer, and 4.6mL of polyisobutene is filled in the butyl rubber frame sealing layer by using a micropump. The internal filling material has a solid content (wt%) of 15%, and 10% of TiO with a scattering particle diameter of 350nm is added into polyisobutene with a number average molecular weight of 5 ten thousand 2 Mixing.
S50, compounding the first solar cell 110 prepared in the step S10 and the second solar cell 120 prepared in the step S40, wherein the first top electrode 118 and the second top electrode 128 are arranged opposite to each other, projection of the ineffective area a1 of the first solar cell 110 and projection of the ineffective area a2 of the second solar cell 120 on the insulating layer 130 are overlapped respectively, and finally, the perovskite solar cell is obtained after the steps of vacuum pumping for 400S, lamination for 65 ℃ and lamination time for 15 minutes in a laminating machine.
And S60, mounting a light guide plate on one side of the second substrate 122 of the perovskite solar cell 100 prepared in the step S50, wherein the light guide plate comprises a reflecting sheet and an optical-grade acrylic plate, and carving light guide points on the bottom surface of the optical-grade acrylic plate by using laser. The line light source penetrating through the etched line in the ineffective area and the scattered light source irradiated from the side face are converted into a surface light source capable of enabling the light guide plate to uniformly emit light, and the reflecting sheet of the light guide plate is provided with a high-reflection metal coating, so that the perovskite solar cell can reflect the light with the bottom face exposed back into the light guide plate, and the photoelectric conversion efficiency of the second solar cell unit 120 is improved.
It should be understood that the above embodiments are merely for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.
Claims (10)
1. A perovskite solar cell, comprising a first solar cell (110), a light-transmitting insulating layer (130) and a second solar cell (120) which are sequentially stacked along a first direction, wherein the first solar cell (110) and the second solar cell (120) are respectively used for absorbing light with a first wavelength and light with a second wavelength, and the first wavelength is the same as or different from the second wavelength;
the first solar cell unit (110) comprises a plurality of first sub-cells (111) which are arranged in series and/or in parallel, the plurality of first sub-cells (111) are arranged in parallel along a second direction, the second solar cell unit (120) comprises a plurality of second sub-cells (121) which are arranged in series and/or in parallel, and the plurality of second sub-cells (121) are also arranged in parallel along the second direction;
and, any one of the plurality of first subcells (111) and the plurality of second subcells (121) includes a first region and a second region disposed along a second direction, the first region includes an effective region and a light leakage region disposed along the second direction, the effective region includes a plurality of subregions, any two adjacent subregions are isolated from each other by the light leakage region, the second region is an ineffective region for absorbing light of a specified wavelength and generating electric energy, the light leakage region is at least permeable to light other than the light of the specified wavelength, the ineffective region is a photovoltaic dead zone and permeable to light, the plurality of subregions are electrically connected to the ineffective region and disposed in parallel, and the light of the specified wavelength is light of the first wavelength or light of the second wavelength;
the top electrode of each first sub-cell (111) is arranged opposite to the top electrode of the corresponding second sub-cell (121), and the projections of the effective area of each first sub-cell (111) and the effective area of the corresponding second sub-cell (121) on the insulating layer (130) are overlapped with each other, and the projections of the ineffective area in the first solar cell unit (110) and the ineffective area of the second solar cell unit (120) on the insulating layer (130) are also overlapped with each other;
wherein the first direction is perpendicular to a second direction, which is a direction parallel to the surface of the insulating layer (130).
2. The perovskite solar cell of claim 1, wherein: the first sub-cell (111) comprises a first substrate (112), a first transparent bottom electrode (113), a first hole transport layer (114), a first perovskite absorption layer (115), a first electron transport layer (116), a first electron injection layer (117) and a first top electrode (118) which are stacked along a first direction;
the second subcell (121) includes a second substrate (122), a second transparent bottom electrode (123), a second hole transport layer (124), a second perovskite absorption layer (125), a second electron transport layer (126), a second electron injection layer (127), and a second top electrode (128) stacked along the first direction.
3. The perovskite solar cell of claim 2, wherein: a first transparent bottom electrode (113), a first hole transport layer (114), a first perovskite absorption layer (115), a first electron transport layer (116), a first electron injection layer (117) and a first top electrode (118) are all removed in a light leakage region of the first sub-cell (111), and a fish scale roughness structure is formed on a side surface of the first substrate (112) away from the insulating layer (13).
4. The perovskite solar cell of claim 1, wherein:
the area ratio of the effective area to the light leakage area in each sub-cell is (50-75) to (25-50);
and/or the area ratio of the effective area to the ineffective area contained in any one of the first solar cell unit (110) and the second solar cell unit (120) is (90-99.99) to (0.01-10);
and/or, in the first direction, the effective area and the light leakage area in each sub-cell are matched to form an interdigital structure;
and/or, the light of the first wavelength and the light of the second wavelength are short wavelength sunlight or long wavelength sunlight; alternatively, the light of the first wavelength is either one of short wavelength sunlight and long wavelength sunlight, and the light of the second wavelength is the other;
and/or the band gap of the first solar cell unit (110) is 1.7-1.9 eV, and the band gap of the second solar cell unit (120) is 1.7-1.9 eV; alternatively, the band gap of the first solar cell unit (110) is 0.9 eV-1.2 eV, and the band gap of the second solar cell unit (120) is 0.9 eV-1.2 eV; alternatively, the band gap of the first solar cell unit (110) is 1.7 eV-1.9 eV, and the band gap of the second solar cell unit (120) is 0.9 eV-1.2 eV.
5. A perovskite solar cell according to claim 2, wherein:
the first top electrode (118) comprises two or more of a metal, a metal oxide, and a metal composite structure;
and/or the second top electrode (128) comprises two or more of a metal oxide, a metal nanowire, and a metal mesh.
6. A perovskite solar cell according to claim 2, wherein:
the material of the first top electrode (118) comprises any one of gold, copper, molybdenum, nickel, silver and aluminum;
and/or the material of the first top electrode (118) comprises at least one of ITO, FTO, IWO, AZO, IGO and IZO;
and/or, a conductive layer is further arranged on the light leakage area of the first solar cell unit (110), and the conductive layer comprises at least one of metal nanowires, carbon nanotubes and grid metals;
and/or the first top electrode (118) comprises a molybdenum copper composite structure, a molybdenum silver composite structure, or a nickel copper composite structure;
and/or the height of the metal composite structure in the first top electrode (118) is 12 nm-50 nm;
and/or the metal nanowires in the second top electrode (128) comprise any one of nickel-shell copper core, molybdenum-shell silver core, nickel-shell silver core nanowires;
and/or the height of the metal nano layer formed by the metal nano wire in the second top electrode (128) is 60 nm-130 nm;
and/or the material of the metal grid in the second top electrode (128) comprises any one of gold, copper, molybdenum, nickel, silver and aluminum;
and/or the thickness of the metal grid in the second top electrode (128) is 15-80 nm.
7. A perovskite solar cell according to claim 2, wherein:
the insulating layer (130) comprises an inner filling layer and a frame sealing layer arranged around the filling part;
and/or, the perovskite solar cell further comprises a light guide plate, the light guide plate is arranged on one side surface of the second substrate (122) far away from the insulating layer (130), and a light reflecting structure is arranged on one side surface of the light guide plate far away from the insulating layer (130).
8. A perovskite solar cell as claimed in claim 7, wherein:
the material of the inner filling layer comprises at least one of EVA adhesive film, POE adhesive film, silica gel, poly (styrene-CO-methyl methacrylate) and polyisobutylene;
and/or the frame sealing layer is made of at least one of UV glue, butyl glue, silane liquid sealant, silicone rubber sealant and polyurethane sealant;
and/or, the inner filling layer further comprises scattering particles, and the weight percentage of the scattering particles to the inner filling layer is 0.5% -20%.
9. A method of manufacturing a perovskite solar cell as claimed in any one of claims 1 to 8, comprising:
a first step of fabricating a first solar cell (110) comprising:
sequentially forming a first transparent bottom electrode (113), a first hole transport layer (114), a first perovskite absorption layer (115), a first electron transport layer (116), a first electron injection layer (117) and a first top electrode (118) on a first substrate (112) to prepare a precursor structure of a first solar cell unit (110);
processing the precursor structure of the first solar cell unit (110) to form a plurality of first sub-cells (111);
defining a first region and a second region in each first sub-cell (111), defining an effective region and a light leakage region in the first region, and etching and removing a first transparent bottom electrode (113), a first hole transport layer (114), a first perovskite absorption layer (115), a first electron transport layer (116), a first electron injection layer (117) and a first top electrode (118) in the light leakage region;
a second step of fabricating a second solar cell unit (120), comprising:
sequentially forming a second transparent bottom electrode (123), a second hole transport layer (124), a second perovskite absorption layer (125), a second electron transport layer (126), a second electron injection layer (127) and a second top electrode (128) on a second substrate (122) to prepare a precursor structure of a second solar cell unit (120);
processing the precursor structure of the second solar cell unit (120) to form a plurality of first sub-cells (111);
defining a first region and a second region in each second sub-cell (121), defining an effective region and a light leakage region in the first region, and etching and removing the second transparent bottom electrode (123), the second hole transport layer (124), the second perovskite absorption layer (125), the second electron transport layer (126), the second electron injection layer (127) and the second top electrode (128) in the light leakage region;
a step of fabricating an insulating layer (130), comprising:
providing an inner filling side layer, and forming a frame sealing layer outside the outer periphery of the inner filling layer;
and laminating and bonding the first solar cell (110), the insulating layer (130) and the second solar cell (120) in sequence.
10. The method of manufacturing according to claim 9, further comprising: and a step of providing a light guide plate on a surface of the second solar cell unit (120) on a side remote from the insulating layer (130).
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