CN116723713A - Self-trapping perovskite solar cell and preparation method and application thereof - Google Patents
Self-trapping perovskite solar cell and preparation method and application thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The application discloses a self-trapping perovskite solar cell and a preparation method and application thereof. The self-trapping perovskite solar cell comprises a first conductive layer, a first carrier transmission layer, a perovskite active absorption layer, a second carrier transmission layer, a second conductive layer, a packaging material layer, a reflection layer and a cell structure packaging layer which are sequentially arranged in a set direction; the surface of one side of the second conductive layer, which is close to the packaging material layer, is provided with a self-trapping structure, and the perovskite active absorption layer is matched with the second carrier transmission layer, the second conductive layer, the packaging material layer and the reflecting layer to form an interlayer trapping structure. The application provides a new battery absorption light trapping structure, which is designed to be easy to implement by utilizing the limited thickness of an absorption layer, and fully reflects and diffusely reflects sunlight in the structure by utilizing the structural characteristics of the light trapping structure, so that the optical path is greatly prolonged, and the perovskite absorption layer can fully absorb sunlight finally and convert the sunlight into electric energy finally, thereby achieving the aim of improving the conversion efficiency.
Description
Technical Field
The application belongs to the technical field of photovoltaic products, and particularly relates to a self-trapping perovskite solar cell, and a preparation method and application thereof.
Background
In recent decades, with the deep research of perovskite solar cells in various communities, the efficiency of the perovskite solar cells is rapidly improved from 3.8% to 25.5%, and the perovskite solar cells surpass other types of thin film solar cells, and a cardiotonic agent is injected into the industrialization process of the type of the cells. The existing thin film solar cells such as copper indium gallium selenium CIGS, cadmium telluride CdTe and the like are all indirect band gap materials, the light absorption coefficient is low, and when the cell is formed, an absorption layer is often required to be deposited to about 2um to fully and effectively absorb solar spectrum, so that higher conversion efficiency can be achieved; meanwhile, cdTe, CIGS and other compound thin film solar cells contain various transition metal and heavy metal elements, and the absorption layer is nearly 2um or thicker, so that the specific gravity of the elements is increased, the conversion rate of resource utilization is low, and the environment-friendly degree is reduced. In addition, the existing perovskite battery is a direct band gap material and has a higher light absorption coefficient, and meanwhile, the perovskite absorption layer is made as thin as possible in consideration of environmental friendliness so as to achieve a thickness sufficient for absorbing sunlight.
Disclosure of Invention
The application mainly aims to provide a self-trapping perovskite solar cell, and a preparation method and application thereof, so as to overcome the defects in the prior art.
In order to achieve the above object, the technical solution adopted in the embodiment of the present application includes:
the application provides a self-trapping perovskite solar cell which comprises a first conductive layer, a first carrier transmission layer, a perovskite active absorption layer, a second carrier transmission layer, a second conductive layer, a packaging material layer, a reflecting layer and a cell structure packaging layer, wherein the first conductive layer, the first carrier transmission layer, the perovskite active absorption layer, the second carrier transmission layer, the second conductive layer, the packaging material layer, the reflecting layer and the cell structure packaging layer are sequentially arranged in a set direction; the surface of one side of the second conductive layer, which is close to the packaging material layer, is provided with a self-trapping structure, and the perovskite active absorption layer is matched with the second carrier transmission layer, the second conductive layer, the packaging material layer and the reflecting layer to form an interlayer trapping structure, wherein the self-trapping structure and the interlayer trapping structure are at least used for fully reflecting light entering the battery so that the light entering the battery is fully absorbed by the perovskite active absorption layer; the set direction is a direction from the light receiving surface of the battery to the backlight surface.
Further, the self-trapping structure comprises a plurality of protruding portions and/or concave portions formed on one side surface of the second conductive layer, which is close to the packaging material layer.
Further, the self-trapping structure comprises a plurality of protruding parts which are formed on one side surface of the second conductive layer close to the packaging material layer and are similar to pyramid structures; and/or, the self-trapping structure comprises a suede structure.
Further, the self-trapping perovskite solar cell further comprises a first passivation layer and/or a second passivation layer, wherein the first passivation layer is arranged between the first carrier transmission layer and the perovskite active absorption layer, and the second passivation layer is arranged between the second carrier transmission layer and the second conductive layer.
Further, the self-trapping perovskite solar cell further comprises a conducting layer buffer layer, wherein the conducting layer buffer layer is distributed between the second passivation layer and the second conducting layer.
Further, the reflective layer has a diffuse reflective structure.
Further, the self-trapping perovskite solar cell is of a forward structure or a reverse structure.
The application also provides a preparation method of the self-trapping perovskite solar cell, which comprises the following steps:
sequentially preparing a first conducting layer, a first carrier transmission layer, a first passivation layer, a perovskite active absorption layer, a second carrier transmission layer, a second passivation layer, a conducting buffer layer, a second conducting layer and a packaging material layer which are stacked to form a perovskite solar cell with a first function;
sequentially preparing a reflecting layer and a battery structure packaging layer which are stacked, and combining and fastening the reflecting layer and the battery structure packaging layer to form a second functional layer;
and combining the perovskite solar cell with the first functional layer and the second functional layer through a lamination process to form the self-trapping perovskite solar cell.
The application also provides a perovskite solar module, which comprises the self-trapping perovskite solar cell.
Compared with the prior art, the application has the following beneficial effects:
(1) The application provides a novel solar cell absorption light trapping structure, which is designed to be easy to implement by utilizing the limited thickness of an absorption layer, and fully reflects and diffusely reflects sunlight in the structure by utilizing the structural characteristics of the solar cell, so that the optical path is greatly prolonged, and the perovskite absorption layer can fully absorb sunlight finally and convert the sunlight into electric energy finally, thereby achieving the purpose of improving the conversion efficiency.
(2) The second conductive layer plays a role in self-trapping of the functional layer by utilizing the self-deposition temperature and the adjustment of the film thickness; meanwhile, the conducting buffer layer, the second conducting layer, the packaging material layer, the reflecting layer and the battery structure packaging layer form an interlayer light trapping structure, and the light trapping effect is enhanced through the design of an interlayer functional layer.
(3) For the application of the self-trapping perovskite solar cell in a large-area cell assembly, the large-area cell is divided into a plurality of small cells by laser due to the internal serial structure design, and light-transmitting etching grooves are formed between the small cells, so that the light is more conveniently collected and enters the cell through the light trapping structure, and the conversion efficiency of the cell is increased.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
Fig. 1 is a schematic structural diagram of a self-trapping perovskite solar cell according to an embodiment of the application.
Fig. 2 is a schematic diagram of interlayer trapping of a self-trapping perovskite solar cell according to an embodiment of the application.
Fig. 3 is a schematic surface view of the second conductive layer in fig. 1.
Fig. 4 is a schematic structural view of a perovskite solar cell according to a comparative example of the application.
Fig. 5 is a graph comparing the perovskite solar cell performance of example 1 with comparative example 1.
Reference numerals illustrate: 10. the cell comprises a bearing layer of a conductive substrate, 11, a conductive layer of the conductive substrate, 20, a hole transport layer, 21, a passivation layer or a blocking layer of the hole transport layer, 30, a perovskite active layer, 40, an electron transport layer, 41, an ion blocking layer or a passivation layer, 50, a conductive buffer layer, 51, a second conductive layer, 60, an encapsulating material layer, 70, a reflecting layer, 71 and a cell structure encapsulating layer.
Detailed Description
In view of the shortcomings of the prior art, the inventor of the present application has provided the technical scheme of the present application through long-term research and a large number of practices, mainly by utilizing the limited thickness of the absorption layer, designs the light trapping structure which is easy to implement, and utilizes the structural characteristics of the light trapping structure to make the sunlight fully reflect and diffusely reflect in the structure, so that the optical path is greatly prolonged, and the perovskite absorption layer can fully absorb the sunlight finally and convert the sunlight into electric energy finally, thereby achieving the purpose of improving the conversion efficiency. The technical scheme, the implementation process and the principle thereof are further explained as follows.
An aspect of the embodiment of the application provides a self-trapping perovskite solar cell, which comprises a first conductive layer, a first carrier transmission layer, a perovskite active absorption layer, a second carrier transmission layer, a second conductive layer, a packaging material layer, a reflecting layer and a cell structure packaging layer which are sequentially arranged in a set direction; the surface of one side of the second conductive layer, which is close to the packaging material layer, is provided with a self-trapping structure, and the perovskite active absorption layer is matched with the second carrier transmission layer, the second conductive layer, the packaging material layer and the reflecting layer to form an interlayer trapping structure, wherein the self-trapping structure and the interlayer trapping structure are at least used for fully reflecting light entering the battery so that the light entering the battery is fully absorbed by the perovskite active absorption layer; the set direction is a direction from the light receiving surface of the battery to the backlight surface.
In some preferred embodiments, the self-trapping structure includes a plurality of protruding portions and/or recessed portions formed on a side surface of the second conductive layer adjacent to the encapsulation material layer.
In some preferred embodiments, the self-trapping structure includes a plurality of pyramid-like structured protrusions formed on a side surface of the second conductive layer adjacent to the encapsulation material layer.
In some preferred embodiments, the self-trapping structure comprises a textured structure.
In some preferred embodiments, the self-trapping perovskite solar cell further comprises a first passivation layer and/or a second passivation layer, the first passivation layer being disposed between the first carrier transport layer and the perovskite active absorber layer, the second passivation layer being disposed between the second carrier transport layer and the second conductive layer.
In some more preferred embodiments, the self-trapping perovskite solar cell further comprises a conductive layer buffer layer disposed between the second passivation layer and the second conductive layer.
In some more preferred embodiments, the perovskite active absorbing layer comprises MAPbI 3 、MA x Cs 1- x PbI 3 、MA x FA y Cs 1-x-y PbI 3 、MA x FA 1-x PbI 3-a Br a 、MA x FA 1-x PbI 3-b Cl b Or MA x FA 1-x PbBr 3-c Cl c Wherein MA has the structural formula of CH 3 NH 3 + FA has the structural formula CH (NH) 2 ) 2 + The values of x and y are 0-1, and the values of a, b and c are 0-3.
In some preferred embodiments, the first conductive layer includes a carrier layer of a conductive substrate and a conductive layer of a conductive substrate disposed sequentially from bottom to top.
In some more preferred embodiments, the bearing layer of the conductive substrate is a main light-receiving surface of the component, that is, light enters from the main light-receiving surface, and the material of the bearing layer of the conductive substrate is transparent glass or flexible transparent material, wherein the transparent glass may include any one of ultrawhite glass, soda lime glass, sodium-free glass, boroaluminosilicate glass, quartz glass, and the like, but is not limited thereto; the flexible transparent material may include, but is not limited to, PET or PEN.
In some more preferred embodiments, the material of the conductive layer of the conductive substrate may include any one or more of FTO, ITO, IWO, IWOH, IOH, IZO, IGZO, nano Ag wires, and the like, but is not limited thereto.
In some preferred embodiments, the reflective layer has a diffuse reflective structure.
In some preferred embodiments, the self-trapping perovskite solar cell is either a forward structure or a reverse structure.
In some more preferred embodiments, the self-trapping perovskite solar cell is in a forward structure, the first carrier transport layer is an electron transport layer, the first passivation layer is an ion blocking layer or passivation layer, the second carrier transport layer is a hole transport layer, and the second passivation layer is a passivation layer or blocking layer for the hole transport layer.
In some more preferred embodiments, the self-trapping perovskite solar cell is a reverse structure, the first carrier transport layer is a hole transport layer, the one passivation layer is a passivation layer or a blocking layer of the hole transport layer, the second carrier transport layer is an electron transport layer, and the second passivation layer is an ion blocking layer or a passivation layer.
In some more preferred embodiments, the hole transport layer may include NiOx, cu: niOx, cuSCN, cuxO, etc., but is not limited thereto, and the thickness of the hole transport layer is 10 to 50nm.
In some more preferred embodiments, the material of the passivation or blocking layer of the hole transporting layer includes a material that does not affect hole transporting function and is effective to limit I-or MA + 、FA + Any one or a combination of a plurality of two-dimensional materials, polymers or ionic liquids for plasma migration and diffusion, but not limited to the two-dimensional materials, the passivation layer or the blocking layer of the hole transport layer has a thickness of 10-50 nm.
In some more preferred embodiments, the electron transport layer comprises C 60 PCBM or SnO 2 Any one or a combination of a plurality of the above, and the thickness of the electron transport layer is 10-50 nm.
In some more preferred embodiments, the material of the ion blocking layer or passivation layer comprises a material that does not affect hole transport and is effective to limit I - Or MA + 、FA + Any one or a combination of a plurality of two-dimensional materials, polymers or ionic liquids for plasma migration and diffusion, but not limited to the two-dimensional materials, polymers or ionic liquids, and the thickness of the ion blocking layer or the passivation layer is 10-50 nm.
In some more preferred embodiments, the conductive buffer layer is preferably configured with a conductive layer having a work function higher than that of the electron transport layer, which is more beneficial for the conduction and transfer of electrons between layers, and may include any one or more of ITO, IWO, IWOH, IOH, IZO, IGZO, ICO, but is not limited thereto.
In some more preferred embodiments, the second conductive layer is a back conductive layer, the light receiving surface of which is incident from the bottom, the first conductive layer may also be called a front conductive layer, and the top side of the second conductive layer is called a back conductive layer or a back conductive layer; and the material of the second conductive layer includes any one or more of BZO, FTO, ITO, IWO, IWOH, IOH, IZO, IGZO, nano Ag wires, etc., but is not limited thereto.
In some more preferred embodiments, the material of the encapsulation material layer includes any one or more combinations of EVA, POE, PVB, etc., but is not limited thereto.
In some more preferred embodiments, the material of the reflective layer includes a metal such as Al, cu, ni, niCr, an alloy, and an equivalent material having a function of reflecting light.
In some more preferred embodiments, the material of the battery structure packaging layer includes tempered back plate glass or flexible back plate material.
The embodiment of the application also advances the preparation method of the self-trapping perovskite solar cell, which comprises the following steps:
sequentially preparing a first conducting layer, a first carrier transmission layer, a first passivation layer, a perovskite active absorption layer, a second carrier transmission layer, a second passivation layer, a conducting buffer layer, a second conducting layer and a packaging material layer which are stacked to form a perovskite solar cell with a first function;
sequentially preparing a reflecting layer and a battery structure packaging layer which are stacked, and combining and fastening the reflecting layer and the battery structure packaging layer to form a second functional layer;
and combining the perovskite solar cell with the first functional layer and the second functional layer through a lamination process to form the self-trapping perovskite solar cell.
In some preferred embodiments, the conductive layer of the conductive substrate may be obtained by vacuum plating such as PVD, PECVD, LPCVD, ALD, or by non-vacuum methods such as coating, knife coating, spraying, knife coating, etc., and the thickness of the conductive layer may be configured according to the process requirements; the hole transport layer can be obtained by a vacuum coating method, or can be obtained by non-vacuum methods such as coating, knife coating, spraying, knife coating and the like; the passivation layer or the blocking layer of the hole transport layer can be obtained by a vacuum plating method, and can also be obtained by non-vacuum methods such as spin coating, knife coating, spraying, knife coating and the like; the film forming method of the perovskite active absorption layer comprises spin coating, spraying, vacuum and the like; the film forming mode of the electron transport layer comprises vacuum film plating, spin coating, spraying and the like; the electron transport layer and the ion blocking layer or passivation layer can be obtained by a vacuum plating method, or can be obtained by a non-vacuum method such as spin coating, knife coating, spraying, knife coating and the like.
In some preferred embodiments, the conductive buffer layer is obtainable by a low damage vacuum coating process such as reactive plasma deposition, ion beam assisted deposition, electron beam evaporation, target, and the like; the second conductive layer is prepared by vacuum LPCVD, and can also be prepared by technical means including, but not limited to, nanoimprint lithography and the like; the encapsulation material layer is obtained by a lamination process.
In another aspect of the embodiments of the present application, a perovskite solar module is provided, which includes the aforementioned self-trapping perovskite solar cell, and for the application of the large-area cell module, because the large-area cell adopts an internal serial structure design, the large cell is divided into a plurality of small cells by laser, and a transparent etching groove is formed between the small cells, and through the aforementioned light trapping structure, the light can be collected more easily to enter the cell, and the conversion efficiency of the cell is increased.
The application will be described in further detail with reference to the drawings and the detailed description.
Example 1
Referring to fig. 1, the present embodiment provides a self-trapping perovskite solar cell, which includes a perovskite solar cell, a conductive buffer layer 50, a second conductive layer 51, an encapsulation material layer 60, a reflective layer 70, and a cell structure encapsulation layer 71 that are sequentially stacked, wherein the perovskite solar cell has a reverse structure, and includes a carrier layer 10 of a conductive substrate, a conductive layer 11 of a conductive substrate, a hole transport layer 20, a passivation layer or barrier layer 21 of a hole transport layer, a perovskite active absorption layer 30, an electron transport layer 40, and an ion barrier layer or passivation layer 41 that are sequentially stacked; the surface of the second conductive layer 51, which is close to the packaging material layer 60, has a self-trapping structure, and the perovskite active absorbing layer 30 is further matched with the electron transport layer 40, the ion blocking layer or passivation layer 41, the conductive buffer layer 50, the second conductive layer 51, the packaging material layer 60 and the reflective layer 70 to form an interlayer trapping structure, wherein the self-trapping structure and the interlayer trapping structure are at least used for fully reflecting light incident on the battery, so that the light incident on the battery is fully absorbed by the perovskite active absorbing layer 30, and the setting direction is the direction from the light receiving surface to the backlight surface of the battery.
In this embodiment, the bearing layer 10 of the conductive substrate is made of ultrawhite glass, and the bearing layer 10 of the conductive substrate is a main light-receiving surface of the component, as shown in fig. 2, that is, light enters from the surface, and a light trapping structure (similar to a pyramid structure) which is easy to implement is designed by using the thickness of the limited perovskite active absorbing layer 30, and by using the structural characteristics of the light trapping structure, sunlight is fully reflected and diffusely reflected in the structure, so that the optical path is greatly prolonged, and the perovskite active absorbing layer 30 can fully absorb sunlight finally and is converted into electric energy finally, thereby achieving the purpose of improving the conversion efficiency.
The material of the conductive layer 11 of the conductive substrate layer on the carrier layer 10 of the conductive substrate layer in this embodiment is FTO, which can be obtained by vacuum coating method such as PVD, PECVD, LPCVD, ALD, or by non-vacuum method such as coating, knife coating, spraying, knife coating, etc., and the thickness thereof can be configured according to the process requirement; the hole transport layer 20 is made of NiOx, has a thickness of 10-50 nm, and is coated on the conductive layer 11 of the upper conductive substrate layer, and can be obtained by a vacuum coating method or a non-vacuum method such as coating, knife coating, spraying, knife coating and the like; the passivation layer or barrier layer 21 of the hole transport layer is made of a material (which does not affect the hole transport function and which is effective in limiting I-or MA + 、FA + Plasma transport diffusion), any one or more of a two-dimensional material, a polymer, an ionic liquid, and the likeComposite layers, e.g. PEAI 2 、PDAI 2 PMMA, which has a thickness of 10 to 50nm, is coated on the upper hole transport layer 20, and is obtained by a vacuum coating method, or by a non-vacuum method such as spin coating, knife coating, spray coating, knife coating, or the like; the perovskite active absorption layer 30 has a structure of MA x FA y Cs 1-x-y PbI 3 、MA x FA 1-x PbI 3- a Br a 、MA x FA 1-x PbI 3-b Cl b 、MA x FA 1-x PbBr 3-c Cl c The values of x and y are 0 to 1, and the values of a, b and c are 0 to 3 (the structural formula of MA is CH) 3 NH 3 + FA has the structural formula CH (NH) 2 ) 2 + ) The thickness is 200-500 nm, and the film forming method comprises spin coating, spraying, vacuum and the like; the electron transport layer 40 is disposed on the perovskite active absorption layer 30, and the electron transport layer 40 is made of material including but not limited to C60, PCBM, snO 2 The thickness of the composite layer is 10-50 nm, and the film forming mode comprises vacuum coating, spin coating, spraying and the like; an ion blocking or passivation layer 41 is disposed on the electron transport layer 40 and is made of a material (which does not affect hole transport and which is effective in limiting I-or MA + 、FA + Plasma migration and diffusion), any one or more composite layers of a two-dimensional material, a polymer, an ionic liquid and the like, such as BCP, with the thickness of 10-50 nm, can be obtained by a vacuum coating method, and can also be obtained by a non-vacuum method such as spin coating, knife coating, spraying, knife coating and the like.
The conducting layer buffer layer 50 is covered on the ion blocking layer or the passivation layer 41, the conducting layer buffer layer 50 is made of one of conducting materials with functions such as IWO, IWOH, IOH, IZO, IGZO, ICO and the like and a plurality of conducting film layers compounded, the thickness of the conducting film layer is about 10-50 nm, and the structure layer can be obtained by a low-damage vacuum coating method such as reactive plasma deposition, ion beam assisted deposition, electron beam evaporation, target alignment and the like; the second conductive layer 51 is located on the conductive layer buffer layer 50, the second conductive layer 51 is a BZO, namely a boron doped ZnO conductive film layer, which is prepared by vacuum LPCVD, and the BZO film layer itself can obtain the self-trapping light function of different suede or pyramid-like structure as shown in fig. 3 by combining the deposition temperature of 100-200 ℃ and the film thickness of 1-2 um, and the better light absorption performance is obtained according to the change of the 250-500 nm structural layer 30, so as to further improve the light conversion efficiency of the battery; the packaging material layer 60, including but not limited to a packaging material having the same function such as EVA, POE, PVB, is formed to a thickness of 500-1000 um by a lamination process to cover the second conductive layer 51; the reflective layer 70 comprises a diffuse reflective layer, including but not limited to metals such as Al, cu, ni, niCr, alloys and equivalent materials with light reflection function, and has a thickness of about 50-200 nm, the reflective layer 70 is covered on the battery structure packaging layer 71 by a vacuum plating deposition method such as PVD and CVD and other related technical methods, the reflective layer 70 is combined and fastened with the battery structure packaging layer 71, then the battery structure packaging layer 71, the reflective layer 70, the packaging material layer 60 and the second conductive layer 51 are laminated together by a lamination process, finally the battery structure packaging layer 71, the reflective layer 70, the packaging material layer 60 and the second conductive layer 51 form an interlayer light trapping structure, so that sunlight is reflected and diffusely reflected in the structure sufficiently, the optical path is greatly prolonged, and the perovskite absorbing layer can absorb sunlight sufficiently finally and is converted into electric energy so as to achieve the purpose of improving the conversion efficiency; the battery structure packaging layer 71 is also a bearing layer of the reflecting layer 70, plays roles of bearing, fixing, compression resistance, aging resistance and the like, and can be toughened backboard glass or flexible backboard material.
Example 2
The embodiment provides a self-trapping perovskite solar cell, which comprises a perovskite solar cell, a conductive buffer layer 50, a second conductive layer 51, an encapsulation material layer 60, a reflection layer 70 and a cell structure encapsulation layer 71 which are sequentially stacked, wherein the perovskite solar cell is of a positive structure, comprises a bearing layer, a conductive layer, an electron transmission layer, an ion blocking layer or a passivation layer, a perovskite active absorption layer, a passivation layer or a blocking layer of a hole transmission layer, and a conductive substrate, wherein the bearing layer, the conductive layer, the electron transmission layer, the ion blocking layer or the passivation layer of the conductive substrate, the perovskite active absorption layer, the hole transmission layer and the hole transmission layer are sequentially stacked, and the conductive buffer layer 50 is made of ITO (from 90% in 2 O 3 And 10% SnO 2 Mixed), and the rest is the same as in example 1.
Comparative example
The present comparative example provides a perovskite solar cell, as shown in fig. 4, comprising a carrier layer 10 of a conductive substrate, a conductive layer 11 of a conductive substrate, a hole transport layer 20, a passivation layer or barrier layer 21 of a hole transport layer, a perovskite active absorbing layer 30, an electron transport layer 40, an ion barrier layer or passivation layer 41, a conductive buffer layer 50, a second conductive layer 51, an encapsulation material layer 60 and a cell structure encapsulation layer 71, which are sequentially arranged, wherein the second conductive layer 51 has no self-trapping structure, i.e. has no pyramid-like texture structure, the second conductive layer 51 is one of conductive materials with functions such as FTO, ITO, IWO, IWOH, IOH, IZO, IGZO and nano Ag wires, respectively, and a plurality of multi-layered conductive film layers are compounded, the conductive film layers can be obtained by a vacuum plating method such as PVD, PECVD, LPCVD, ALD, and can also be obtained by a non-vacuum method such as coating, knife coating, spraying, doctor-blading, etc., and the thickness of the conductive film layer can be configured according to the process requirements.
The self-trapping perovskite solar cell of example 1 was subjected to performance test with the perovskite solar cell of comparative example, and as shown in fig. 5, as can be seen from fig. 5, the main current density Js of the perovskite solar cell of example 1 was improved by 10% and the efficiency PCE was also improved by 10 to 15% with respect to the comparative example.
In addition, the inventors have conducted experiments with other materials, process operations, and process conditions as described in this specification with reference to the foregoing examples, and have all obtained desirable results.
While the application has been described with reference to an illustrative embodiment, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the scope thereof. Therefore, it is intended that the application not be limited to the particular embodiment disclosed for carrying out this application, but that the application will include all embodiments falling within the scope of the appended claims. Moreover, unless specifically stated any use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another.
Claims (10)
1. The self-trapping perovskite solar cell is characterized by comprising a first conductive layer, a first carrier transmission layer, a perovskite active absorption layer, a second carrier transmission layer, a second conductive layer, an encapsulation material layer, a reflection layer and a cell structure encapsulation layer which are sequentially arranged in a set direction; the surface of one side of the second conductive layer, which is close to the packaging material layer, is provided with a self-trapping structure, and the perovskite active absorption layer is matched with the second carrier transmission layer, the second conductive layer, the packaging material layer and the reflecting layer to form an interlayer trapping structure, wherein the self-trapping structure and the interlayer trapping structure are at least used for fully reflecting light entering the battery so that the light entering the battery is fully absorbed by the perovskite active absorption layer; the set direction is a direction from the light receiving surface of the battery to the backlight surface.
2. The self-trapping perovskite solar cell of claim 1, wherein: the self-trapping structure comprises a plurality of convex parts and/or concave parts formed on one side surface of the second conductive layer close to the packaging material layer.
3. The self-trapping perovskite solar cell according to claim 2, wherein: the self-trapping structure comprises a plurality of protruding parts which are formed on the surface of one side of the second conductive layer, close to the packaging material layer, and are similar to pyramid structures; and/or, the self-trapping structure comprises a suede structure.
4. The self-trapping perovskite solar cell of claim 1, further comprising a first passivation layer disposed between the first carrier transport layer and the perovskite active absorber layer and/or a second passivation layer disposed between the second carrier transport layer and the second conductive layer.
5. The self-trapping perovskite solar cell of claim 4, further comprising a conductive layer buffer layer distributed between the second passivation layer and the second conductive layer.
6. The self-trapping perovskite solar cell of claim 5, wherein: the material of the conductive buffer layer comprises any one or a combination of a plurality of ITO, IWO, IWOH, IOH, IZO, IGZO or ICO.
7. The self-trapping perovskite solar cell of claim 1, wherein: the reflective layer has a diffuse reflective structure.
8. The self-trapping perovskite solar cell of claim 1, wherein: the self-trapping perovskite solar cell is of a forward structure or a reverse structure.
9. A method of manufacturing a self-trapping perovskite solar cell according to any one of claims 1 to 8, comprising:
sequentially preparing a first conducting layer, a first carrier transmission layer, a first passivation layer, a perovskite active absorption layer, a second carrier transmission layer, a second passivation layer, a conducting buffer layer, a second conducting layer and a packaging material layer which are stacked to form a perovskite solar cell with a first function;
sequentially preparing a reflecting layer and a battery structure packaging layer which are stacked, and combining and fastening the reflecting layer and the battery structure packaging layer to form a second functional layer;
and combining the perovskite solar cell with the first functional layer and the second functional layer through a lamination process to form the self-trapping perovskite solar cell.
10. A perovskite solar module comprising a self-trapping perovskite solar cell according to any one of claims 1 to 8.
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