CN113258005A - Organic solar cell formed by composite electrode and preparation method - Google Patents
Organic solar cell formed by composite electrode and preparation method Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 77
- 230000005540 biological transmission Effects 0.000 claims abstract description 62
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
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- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 7
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- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses an organic solar cell formed by a composite electrode and a preparation method thereof, wherein the preparation method comprises the following steps: preparing a metal grid on a substrate; coating a silver nanowire ethanol solution on the upper surface of the metal grid, and forming a metal grid-silver nanowire composite film on the surface of the substrate; carrying out thermal annealing on the metal grid-silver nanowire composite film to obtain a metal grid-silver nanowire composite electrode; and sequentially preparing a first transmission layer, an optical activity layer, a second transmission layer and a back electrode on the surface of the metal grid-silver nanowire composite electrode from bottom to top. The metal grid-silver nanowire composite electrode not only utilizes the lamination effect of the metal grid and the silver nanowires to obtain good conductivity, but also can capture more light to enter a device due to the good transmittance of the silver nanowires, so that the absorption utilization rate of the device on sunlight is improved, and the metal grid-silver nanowire composite electrode can be used for preparing a high-performance organic solar cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to an organic solar cell formed by a metal grid-silver nanowire composite electrode.
Background
With the increasing exhaustion of non-renewable resources such as coal, petroleum, natural gas and the like, new energy, especially solar cells, become a focus of scientific research at home and abroad. An organic solar cell is a member of solar cells, and is also a device that absorbs sunlight and converts it into electric energy. The transparent electrode is used as an incident electrode of the organic solar cell, and plays an important role in the photoelectric conversion efficiency of the organic solar cell. In order to improve the conversion efficiency of the organic solar cell to the maximum extent, the transparent electrode not only needs to have high light transmittance, but also needs to have strong electric conductivity. Therefore, it is very important to research an electrode with good photoelectric combination property.
At present, the transparent electrode material commonly used in organic solar cells is ITO, and most of the transparent electrode material is in a planar structure, and glass is used as a substrate to form a bottom electrode of a device. However, because the raw material indium of ITO belongs to a rare resource, the manufacturing process is complex, the cost is high, and the flexibility is poor, thereby greatly limiting the application development of ITO. Therefore, it is important to develop a novel transparent electrode instead of ITO, and it must have high conductivity and high transmittance.
Disclosure of Invention
The invention aims to overcome the technical problems and provide the metal grid-silver nanowire composite electrode, the preparation method is simple and efficient, and the prepared electrode has the advantages of the metal grid and the silver nanowire and realizes good balance of photoelectric comprehensive performance.
In order to overcome the problems of low photoelectric conversion efficiency and poor transmittance of the conventional organic solar cell, the invention also provides the organic solar cell comprising the metal grid-silver nanowire composite electrode, and the comprehensive photoelectric performance of an organic solar cell device is improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
an organic solar cell formed by a composite electrode comprises a glass substrate, a metal grid-silver nanowire composite electrode, a first transmission layer, a light activity layer, a second transmission layer and a back electrode in sequence from the bottom surface to the top surface; the first transmission layer is an electron transmission layer or a hole transmission layer, and when the first transmission layer is the electron transmission layer, the second transmission layer is the hole transmission layer; when the first transmission layer is a hole transmission layer, the second transmission layer is an electron transmission layer; the metal grid-silver nanowire composite electrode structure is as follows: the line width of the metal grids is 5-20 mu m, and the space between the grids is 50-200 mu m; the metal grids and the silver nanowires are coated between the grids; the silver nanowires are longer than 12 microns and have a diameter of 30-200 nm.
Preferably, the material of the metal grid is one of Ag, Au, Cu or Al.
Preferably, the material of the electron transport layer is ZnO or SnO2(ii) a The hole transport layer is made of MoO3Or PEDOT.
Preferably, the photoactive layer is an electron donor and electron acceptor composite film, and the electron donor is P3HT or PTB 7-Th; the electron acceptor is PC71BM or IEICO-4F.
Preferably, the material of the back electrode is Ag, Cu or Au.
A preparation method of an organic solar cell formed by a composite electrode specifically comprises the following steps:
s1, ultrasonically cleaning a glass substrate by using a detergent, deionized water, acetone and ethanol in sequence, and drying by using nitrogen after cleaning; evaporating and plating a metal film with the thickness of 5-50 nm on the surface of the glass substrate;
s2, coating glue, exposing, developing, etching and cleaning the metal film prepared in the step S1 by utilizing a photoetching technology, and processing the metal film into a metal grid;
s3, taking 60 mu l of 5-10 mg/ml silver nanowire ethanol solution by using a liquid transfer gun, spin-coating the silver nanowire ethanol solution on the metal grid and the substrate which is not covered by the metal for 4-8 times to form a metal grid-silver nanowire composite film, and then annealing the metal grid-silver nanowire composite film at the temperature of 160 ℃ to form a metal grid-silver nanowire composite electrode;
s4, spin-coating a first transmission layer on the surface of the metal grid-silver nanowire composite electrode, wherein the first transmission layer is an electron transmission layer or a hole transmission layer;
s5, spin-coating a light active layer on the first transmission layer;
s6, vacuum evaporation plating a second transmission layer on the active layer; and finally, vacuum evaporating a back electrode on the second transmission layer.
Preferably, a first transmission layer is spin-coated on the surface of the metal grid-silver nanowire composite electrode, and the method specifically comprises the following steps: SnO material for spin-coating electron transport layer on surface of metal grid-silver nanowire composite electrode2Or ZnO, and annealing the formed film; or a hole transport layer material MoO is spin-coated on the surface of the metal grid-silver nanowire composite electrode3Or PEDOT, and annealing the formed film; vacuum evaporating a second transmission layer on the active layer; the method specifically comprises the following steps: SnO material for vacuum evaporation of electron transport layer on active layer2Or ZnO, or MoO which is a material for vacuum evaporating a hole transport layer on the active layer3Or PEDOT; when the first transmission layer is an electron transmission layer, the second transmission layer is a hole transmission layer; when the first transmission layer is a hole transmission layer, the second transmission layer is an electron transmission layer.
Preferably, the photoactive layer is a mixed solution of PTB7-Th and IEICO-4F, and the mass ratio of PTB7-Th to IEICO-4F is 1: 1.5.
the invention has the following beneficial effects:
the transparent electrode designed by the invention adopts a composite structure of the metal grid and the silver nanowires, so that on one hand, the consistency, the continuity and the regularity of the metal grid can be utilized, so that the surface impedance value of the device electrode is lower, and the device electrode has higher conductivity; on the other hand, the silver nanowires can be deposited on the metal grids, the conductivity of the electrode is more excellent due to the good conductivity of the silver nanowires, and more light can be incident and penetrate through the electrode due to the good transmittance of the silver nanowires, so that the light absorption rate of the battery device is enhanced. The organic solar cell prepared by the metal grid-silver nanowire composite electrode has good photoelectric conversion efficiency.
Drawings
Fig. 1 is a schematic view of a metal mesh-silver nanowire composite electrode of the present invention;
FIG. 2 is a schematic structural view of an organic solar cell of the present invention;
fig. 3 is an I-V graph of an organic solar cell device of example 5 of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following specific embodiments in combination with the accompanying drawings.
In the present invention, all the equipment and materials are commercially available or commonly used in the art, and the methods in the following examples are conventional in the art unless otherwise specified.
Example 1:
the silver nanowires used in this example have a length of 13 μm and a diameter of 30nm, and the first transport layer of the organic solar cell is an electron transport layer and the second transport layer is a hole transport layer.
Carrying out ultrasonic cleaning on the glass substrate by using a detergent, deionized water, acetone and ethanol in sequence, and drying by using nitrogen after cleaning; evaporating and plating a layer of Ag with the thickness of 10nm on the surface of the glass substrate to form a metal film; and (3) coating glue, exposing, developing, etching and cleaning on the metal film by utilizing a photoetching technology, and processing the metal film into metal grids, wherein the line width of the corresponding metal grid is 5 micrometers, and the distance between the grids is 50 micrometers. 60 mul of 5mg/ml silver nanowire ethanol solution is taken by a liquid transfer gun to be spin-coated on the metal grid and the substrate which is not covered by the metal, the spin-coating times are 4 times, a metal grid-silver nanowire composite film is formed, and then the metal grid-silver nanowire composite film is annealed at the temperature of 160 ℃, so that the metal grid-silver nanowire composite electrode shown in figure 1 is formed.
30nm SnO is coated on the surface of the metal grid-silver nanowire composite electrode in a spin coating manner2(electron transport layer), and annealing the formed film at 150 ℃ for 10 minutes; then, a mixed solution of PTB7-Th and IEICO-4F is spin-coated, wherein the mass ratio of the PTB7-Th to the IEICO-4F is 1: 1.5, obtaining a layer thicknessA mixed film of PTB7-Th at a degree of 90nm and IEICO-4F (photoactive layer); then a layer of MoO with the thickness of 8nm is evaporated on the active layer in vacuum3(hole transport layer); finally, a layer of 100nm thick Ag was vacuum-evaporated on the hole transport layer as a back electrode, thereby obtaining an organic solar cell as shown in fig. 2, which had a photoelectric conversion efficiency of 8%.
Example 2:
the silver nanowires used in this example have a length of 15 μm and a diameter of 50nm, and the first transport layer of the organic solar cell is an electron transport layer and the second transport layer is a hole transport layer.
Carrying out ultrasonic cleaning on the glass substrate by using a detergent, deionized water, acetone and ethanol in sequence, and drying by using nitrogen after cleaning; evaporating and plating a layer of Ag with the thickness of 15nm on the surface of the glass substrate to form a metal film; the metal film is processed into metal grids by utilizing the photoetching technology to perform gluing, exposure, development, etching and cleaning, the line width of the corresponding metal grid is 10 mu m, and the distance between the grid and the grid is 100 mu m. 60 mul of 6mg/ml silver nanowire ethanol solution is taken by a liquid transfer gun to be spin-coated on the metal grid and the substrate which is not covered by the metal for 6 times to form a metal grid-silver nanowire composite film, and then the metal grid-silver nanowire composite film is annealed at the temperature of 160 ℃ to form the metal grid-silver nanowire composite electrode shown in figure 1.
Spin-coating ZnO (electron transport layer) with the thickness of 30nm on the surface of the metal grid-silver nanowire composite electrode, and annealing the formed film at the annealing temperature of 150 ℃ for 10 minutes; then, a mixed solution of PTB7-Th and IEICO-4F is spin-coated, wherein the mass ratio of the PTB7-Th to the IEICO-4F is 1: 1.5, obtaining a mixed film (photoactive layer) of PTB7-Th and IEICO-4F with a thickness of 90 nm; then a layer of MoO with the thickness of 8nm is evaporated on the active layer in vacuum3(hole transport layer); finally, a layer of 100nm thick Ag was vacuum-evaporated on the hole transport layer as a back electrode, thereby obtaining an organic solar cell as shown in fig. 2, which had a photoelectric conversion efficiency of 8.1%.
Example 3:
the silver nanowires used in this example have a length of 16 μm and a diameter of 80nm, and the first transport layer of the organic solar cell is an electron transport layer and the second transport layer is a hole transport layer.
Carrying out ultrasonic cleaning on the glass substrate by using a detergent, deionized water, acetone and ethanol in sequence, and drying by using nitrogen after cleaning; evaporating and plating a layer of Au with the thickness of 10nm on the surface of the glass substrate to form a metal film; and (3) coating glue, exposing, developing, etching and cleaning on the metal film by utilizing a photoetching technology, and processing the metal film into metal grids, wherein the line width of the corresponding metal grid is 15 micrometers, and the distance between the grids is 120 micrometers. 60 mul of 7mg/ml silver nanowire ethanol solution is taken by a liquid transfer gun to be spin-coated on the metal grid and the substrate which is not covered by the metal, the spin-coating times are 7 times, a metal grid-silver nanowire composite film is formed, and then the metal grid-silver nanowire composite film is annealed at the temperature of 160 ℃, so that the metal grid-silver nanowire composite electrode shown in figure 1 is formed.
30nm SnO is coated on the surface of the metal grid-silver nanowire composite electrode in a spin coating manner2(electron transport layer), and annealing the formed film at 150 ℃ for 10 minutes; followed by spin coating of PTB7-Th and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1: 1.5 obtaining a layer of PTB7-Th with a thickness of 90nm and PC71Mixed films of BM (photoactive layer); then a layer of MoO with the thickness of 8nm is evaporated on the active layer in vacuum3(hole transport layer); finally, a layer of 100nm thick Cu was vacuum-evaporated on the hole transport layer as a back electrode, thereby obtaining an organic solar cell as shown in fig. 2, which had a photoelectric conversion efficiency of 7.98%.
Example 4:
the silver nanowires used in this example have a length of 18 μm and a diameter of 100nm, and the first transport layer of the organic solar cell is an electron transport layer and the second transport layer is a hole transport layer.
Carrying out ultrasonic cleaning on the glass substrate by using a detergent, deionized water, acetone and ethanol in sequence, and drying by using nitrogen after cleaning; evaporating and plating a layer of 10nm Al on the surface of the glass substrate to form a metal film; and (3) coating glue, exposing, developing, etching and cleaning on the metal film by utilizing a photoetching technology, and processing the metal film into metal grids, wherein the line width of the corresponding metal grid is 18 mu m, and the distance between the grids is 150 mu m. 60 mul of 10mg/ml silver nanowire ethanol solution is taken by a liquid transfer gun to be spin-coated on the metal grid and the substrate which is not covered by the metal, the spin-coating times are 8 times, a metal grid-silver nanowire composite film is formed, and then the metal grid-silver nanowire composite film is annealed at the temperature of 160 ℃, so that the metal grid-silver nanowire composite electrode shown in figure 1 is formed.
Spin-coating ZnO (electron transport layer) with the thickness of 30nm on the surface of the metal grid-silver nanowire composite electrode, and annealing the formed film at the annealing temperature of 150 ℃ for 10 minutes; followed by spin coating of PTB7-Th and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1: 1.5 obtaining a layer of PTB7-Th with a thickness of 90nm and PC71Mixed films of BM (photoactive layer); then a layer of MoO with the thickness of 8nm is evaporated on the active layer in vacuum3(hole transport layer); finally, a layer of Au with a thickness of 100nm was vacuum-evaporated on the hole transport layer as a back electrode, thereby obtaining an organic solar cell as shown in fig. 2, which had a photoelectric conversion efficiency of 8.3%.
Example 5:
the silver nanowires used in this embodiment have a length of 20 μm and a diameter of 50nm, and the first transport layer of the organic solar cell is a hole transport layer and the second transport layer is an electron transport layer.
Carrying out ultrasonic cleaning on the glass substrate by using a detergent, deionized water, acetone and ethanol in sequence, and drying by using nitrogen after cleaning; evaporating and plating a layer of Cu with the thickness of 10nm on the surface of the glass substrate to form a metal film; and (2) coating glue, exposing, developing, etching and cleaning on the metal film by utilizing a photoetching technology, and processing the metal film into metal grids, wherein the line width of the corresponding metal grid is 20 micrometers, and the space between the grids is 200 micrometers. 60 mul of 8mg/ml silver nanowire ethanol solution is taken by a liquid transfer gun to be spin-coated on the metal grid and the substrate which is not covered by the metal, the spin-coating times are 8 times, a metal grid-silver nanowire composite film is formed, and then the metal grid-silver nanowire composite film is annealed at the temperature of 160 ℃, so that the metal grid-silver nanowire composite electrode shown in figure 1 is formed.
Spin-coating PEDOT (hole transport layer) with the thickness of 30nm on the surface of the metal grid-silver nanowire composite electrode, and annealing the formed film at the annealing temperature of 150 ℃ for 10 minutes; followed by spin coating P3HT and PC71Mixed solution of BM P3HT and PC71The mass ratio of BM is 1: 1.5, obtaining a layer of P3HT and PC with a thickness of 90nm71Mixed films of BM (photoactive layer); then, a layer of MoO3 (electron transport layer) with the thickness of 8nm is evaporated on the active layer in vacuum; finally, a layer of 100nm thick Ag was vacuum-evaporated on the hole transport layer as a back electrode, thereby obtaining an organic solar cell as shown in fig. 2, which had a photoelectric conversion efficiency of 9.3%. The I-V curve of the organic solar cell device of this example is shown in fig. 3.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and other variations and modifications may be made without departing from the spirit of the invention as set forth in the claims.
Claims (9)
1. An organic solar cell formed by a composite electrode, characterized in that: the metal grid-silver nanowire composite electrode sequentially comprises a glass substrate, a metal grid-silver nanowire composite electrode, a first transmission layer, an optical activity layer, a second transmission layer and a back electrode from the bottom surface to the top surface; the first transmission layer is an electron transmission layer or a hole transmission layer, and when the first transmission layer is the electron transmission layer, the second transmission layer is the hole transmission layer; when the first transmission layer is a hole transmission layer, the second transmission layer is an electron transmission layer; the metal grid-silver nanowire composite electrode structure is as follows: the line width of the metal grids is 5-20 mu m, and the space between the grids is 50-200 mu m; the metal grids and the silver nanowires are coated between the grids; the silver nanowires are longer than 12 microns and have a diameter of 30-200 nm.
2. The organic solar cell of claim 1, wherein the organic solar cell comprises a composite electrode comprising: the material of the metal grid is Ag, Au, Cu or Al.
3. The organic solar cell of claim 1, wherein the organic solar cell comprises a composite electrode comprising: the electron transport layer is made of ZnO or SnO2(ii) a The hole transport layer is made of MoO3Or PEDOT.
4. The organic solar cell of claim 1, wherein the organic solar cell comprises a composite electrode comprising: the photoactive layer is an electron donor and electron acceptor composite film, and the electron donor is P3HT or PTB 7-Th; the electron acceptor is PC71BM or IEICO-4F.
5. The organic solar cell of claim 1, wherein the organic solar cell comprises a composite electrode comprising: the back electrode is made of Ag, Cu or Au.
6. The method for preparing an organic solar cell composed of a composite electrode according to claim 1, wherein the method specifically comprises the following steps:
s1, ultrasonically cleaning a glass substrate by using a detergent, deionized water, acetone and ethanol in sequence, and drying by using nitrogen after cleaning; evaporating and plating a metal film with the thickness of 5-50 nm on the surface of the glass substrate;
s2, coating glue, exposing, developing, etching and cleaning the metal film prepared in the step S1 by utilizing a photoetching technology, and processing the metal film into a metal grid;
s3, taking 60 mu l of 5-10 mg/ml silver nanowire ethanol solution by using a liquid transfer gun, spin-coating the silver nanowire ethanol solution on the metal grid and the substrate which is not covered by the metal for 4-8 times to form a metal grid-silver nanowire composite film, and then annealing the metal grid-silver nanowire composite film at the temperature of 160 ℃ to form a metal grid-silver nanowire composite electrode;
s4, spin-coating a first transmission layer on the surface of the metal grid-silver nanowire composite electrode, wherein the first transmission layer is an electron transmission layer or a hole transmission layer;
s5, spin-coating a light active layer on the first transmission layer;
s6, vacuum evaporation plating a second transmission layer on the active layer; and finally, vacuum evaporating a back electrode on the second transmission layer.
7. The method according to claim 6, wherein the method comprises the steps of: the line width of the metal grids is 5-20 mu m, and the space between the grids is 50-200 mu m; the silver nanowires are longer than 12 microns and have the diameter of 30-200 nm.
8. The method according to claim 6, wherein the method comprises the steps of: spin-coating a first transmission layer on the surface of the metal grid-silver nanowire composite electrode, and specifically comprises the following steps: SnO material for spin-coating electron transport layer on surface of metal grid-silver nanowire composite electrode2Or ZnO, and annealing the formed film; or a hole transport layer material MoO is spin-coated on the surface of the metal grid-silver nanowire composite electrode3Or PEDOT, and annealing the formed film; vacuum evaporating a second transmission layer on the active layer; the method specifically comprises the following steps: SnO material for vacuum evaporation of electron transport layer on active layer2Or ZnO, or MoO which is a material for vacuum evaporating a hole transport layer on the active layer3Or PEDOT; when the first transmission layer is an electron transmission layer, the second transmission layer is a hole transmission layer; when the first transmission layer is a hole transmission layer, the second transmission layer is an electron transmission layer.
9. The method according to claim 6, wherein the method comprises the steps of: the photoactive layer is a mixed solution of PTB7-Th and IEICO-4F, and the mass ratio of PTB7-Th to IEICO-4F is 1: 1.5.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023109071A1 (en) * | 2021-12-15 | 2023-06-22 | 中国华能集团清洁能源技术研究院有限公司 | Perovskite solar cell containing optical micro-cavity structure |
| WO2023184966A1 (en) * | 2022-03-31 | 2023-10-05 | 华南理工大学 | Carbon nanotube/silver nanowire composite film and gallium arsenide-based heterojunction solar cell thereof and preparation method |
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