CN205741208U - For the system of plasma process chamber improved and equipment - Google Patents
For the system of plasma process chamber improved and equipment Download PDFInfo
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- CN205741208U CN205741208U CN201620044524.5U CN201620044524U CN205741208U CN 205741208 U CN205741208 U CN 205741208U CN 201620044524 U CN201620044524 U CN 201620044524U CN 205741208 U CN205741208 U CN 205741208U
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000008569 process Effects 0.000 title claims abstract description 45
- 238000000429 assembly Methods 0.000 claims abstract description 72
- 230000000712 assembly Effects 0.000 claims abstract description 72
- 239000007921 spray Substances 0.000 claims abstract description 39
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims 7
- 239000004568 cement Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 18
- 239000007789 gas Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 13
- 230000006872 improvement Effects 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000012466 permeate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Abstract
Embodiment of the present utility model provides the system processing chamber for improving and equipment.Embodiment includes plasma enhanced chemical vapor deposition (PECVD) system, and described PECVD system has: processing chamber, described process chamber has cap assemblies and spray head；And RF generator, described RF generator is operable to be provided the power of 10kW or bigger to described spray head by described cap assemblies.Described RF generator is close to described cap assemblies and arranges.Also disclose many additional aspects.
Description
Related application
This utility model requires U.S. Provisional Patent Application No.62/219 of JIUYUE in 2015 that submit to, entitled " SYSTEMS; APPARATUS; AND METHODS FOR AN IMPROVED PLASMA PROCESSING CHAMBER (system of plasma process chamber, equipment and method for improving) " on the 16th, the priority of 653, this U.S. Provisional Patent Application is incorporated by reference herein the most for all purposes.
Technical field
This utility model relates to processing chamber, and more specifically, relates to system and the equipment of the plasma process chamber of improvement.
Background technology
Plasma enhanced chemical vapor deposition (PECVD) is often used on substrate depositing thin film, described substrate such as, semiconductor substrate, the substrate of flat faced display (FPD), the substrate of organic light emission (OLE) panel, the substrate of solar panel and other substrates.PECVD is a kind of deposition process, by described deposition process, is introduced process gases in process chamber by gas distribution diffuser or spray head.It is uniformly dispersed described place process gases when described spray head is in the process space located between the process gases described spray head of inflow and the pedestal supporting substrate.Generally with RF (radio frequency) field, spray head is carried out electrical bias so that gas ignition will be processed as plasma.It is positioned at the pedestal located relative with spray head typically electrically grounded, or is powered by single RF source and be used as anode.Described plasma generation chemical substance is to form the thin film of material on a surface of a substrate, and described substrate is positioned on pedestal.
RF field is generally sent to spray head/chamber via transmission line (such as, compliant conductive cable or ridge waveguide) from RF generator.The RF matching network coupled between transmission line and spray head/chamber can be used to the input impedance making the output of RF generator be impedance-matched to chamber.Although transmission line is typically chosen to be has low-loss, but the length of transmission line can be the key factor in coupling impedance.Impedance mismatching can reduce the efficiency of system, makes the design of matching network complicate, and causes other problems.Additionally, the floor space operated in these clean room environments processing chamber is much more expensive, and reducing total area coverage of this type of chamber, this can obtain significantly saving.Therefore, solve these problems, be required for RF power is sent to process the system of improvement of chamber and equipment.
Utility model content
In certain embodiments, this utility model provides a kind of system processing chamber for improving.Embodiment includes plasma enhanced chemical vapor deposition (PECVD) system, and described PECVD system has: processing chamber, described process chamber has cap assemblies and spray head；And RF generator, described RF generator is operable to be provided the power of 10kW or bigger to spray head by cap assemblies.RF generator is close to cap assemblies and arranges.Described cap assemblies includes the RF matching network being coupled in RF generator and processing between chamber.RF matching network is operable such that the output impedance matching of RF generator is to the input impedance processing chamber.
In other embodiments, this utility model provides a kind of process Pit cover equipment, and described process Pit cover equipment includes: cap assemblies, described cap assemblies can be conductively coupled to spray head；And RF generator, described RF generator is operable to be provided the power of 10kW or bigger to spray head by cap assemblies.RF generator is close to cap assemblies and arranges.
In further embodiments, this utility model provides a kind of system, described system includes processing chamber, described process chamber has cap assemblies and spray head, described system is characterised by RF generator, described RF generator is operable to be provided the power of 10kW or bigger to spray head by cap assemblies, and wherein, described RF generator is close to described cap assemblies and arranges.
According to detailed description below, appended claims and accompanying drawing, by a large amount of exemplary embodiments and implementation (including the optimal mode conceived for performing this utility model) are described, other features of the present utility model, aspect and advantage will become to be fully apparent from.Embodiment of the present utility model can also can have other and different application, and can revise its some details in all fields, and all such modifications are all without departing from spirit and scope of the present utility model.Therefore, accompanying drawing and description are considered to be substantially illustrative and not restrictive.Accompanying drawing is not necessarily drawn to scale.Description is intended to cover all of amendment fallen within the spirit and scope of the claims, equivalents and replacement scheme.
Accompanying drawing explanation
Fig. 1 is according to embodiment of the present utility model, the schematic block diagram of the first example embodiment of the system depicting improvement.
Fig. 2 is according to embodiment of the present utility model, the schematic block diagram of the second example embodiment of the system depicting improvement.
Fig. 3 is according to embodiment of the present utility model, the schematic block diagram of the 3rd example embodiment of the system depicting improvement.
Fig. 4 is according to embodiment of the present utility model, the schematic block diagram of the 4th example embodiment of the system depicting improvement.
Detailed description of the invention
Embodiment of the present utility model provides the system processing chamber for improving and equipment.Embodiment includes plasma enhanced chemical vapor deposition (PECVD) equipment, and described PECVD device includes: processing chamber, described process chamber has cap assemblies and spray head；And radio frequency (RF) generator, described RF generator is operable to provide the power of 10kW, 15kW or bigger.RF generator is arranged adjacent to spray head, and spray head is couple to cap assemblies.RF generator is arranged on the cap assembly.Described cap assemblies includes the RF matching network being coupled in RF generator and processing between chamber.RF matching network is operable such that the output impedance matching of RF generator is to the input impedance processing chamber.
Forward Fig. 1 to, it is shown that for the side view of the example PECVD system 100 of plasma enhanced chemical vapor deposition.System 100 includes processing chamber 102, described process chamber 102 has gas diffusion spray head 104, described gas diffusion spray head 104 is arranged in described process chamber 102, and it is arranged on removable cap assemblies 106 and is close to described removable cap assemblies 106 (such as, contacting) with described removable cap assemblies 106.Cap assemblies 106 can sealably be attached to process the top of chamber 102.Cap assemblies 106 can include that cover plate 107 and matching network 108, described matching network 108 are conductively coupled to spray head 104 via adapter 113.As follows, in certain embodiments, matching network 108 can be integrally formed in described cap assemblies 106, or may be installed on the basal surface of described cap assemblies 106.Additionally, it is that install on described cap assemblies 106 and be close to described cap assemblies 106 (such as, contacting) with described cap assemblies 106 is compact RF generator 110.In certain embodiments, RF generator 110 can be directly mounted on cap assemblies 106, and in certain embodiments, matching network 108 may be installed between described RF generator 110 and described cap assemblies 106.The distance that these configurations are intended to make between RF generator 110 and spray head 104 is (such as, in terms of the length of conducting path) minimize, and reduce the area coverage of system 100 (such as, compare the maker next-door neighbour's chamber making to be arranged on the floor of toilet, by being vertically stacked in system 100 by RF maker 110) and cost.RF generator 110 includes exporting 112, and described output 112 can directly be conductively coupled to matching network 108.
Be suitable to include being made, by the capital three of Japan Yokohama, the RF generator that model is RFK150FH and RFK150ZH that Co., Ltd. of institute (Kyosan Electric Mfg.Co.Ltd.of Yokohama, Japan) manufactures with the example of that be originally used together with the embodiment of utility model, commercially available compact RF generator.The details of this type of RF generator is in United States Patent (USP) No.6 of on August 17th, 2004 that award a certificate to Yuzurihara et al., entitled " POWER SUPPLY APPARATUS FOR GENERATING PLASMA (for generating the power-supply device of plasma) ", 777, disclosed in 881, this United States Patent (USP) is expressly incorporated herein the most for all purposes.The example of the suitable matching network being used together with embodiment of the present utility model is included in the U.S. Patent application S/N.14/815 of Kudela et al. all of, entitled " COMPACT CONFIGURABLE MODULAR RADIO FREQUENCY MATCHING NETWORK ASSEMBLY FOR PLASMA PROCESSING SYSTEMS (for the compact configurable module RF matching network assembly of plasma process system) ", matching network described in 945, the disclosure of this U.S. Patent application is expressly incorporated herein the most for all purposes.
Process gases at gas source 114 feeding.When chamber 102 is used for depositing, from gas source 114, feed place's process gases by remote plasma source 116 and by pipeline 118.In described remote plasma source 116, place's process gases is not ignited into plasma.Described remote plasma source 116 is alternatively used for cleaning pipeline 118 and miscellaneous part.Such as, in some embodiments of those embodiments described in such as Fig. 3 and Fig. 4 etc, remote plasma source 116 is optional, and does not exists.In certain embodiments, it is possible to provide bypass, at described bypass permission, process gases flows around remote plasma source 116.During cleaning, cleaning gas is sent to remote plasma source 116 from gas source 114, and at remote plasma source 116, described cleaning gas was ignited into plasma before entering chamber 102.Pipeline 118 is the pipeline of conduction.
RF field is coupled to pipeline 118 from RF generator 110 via matching network 108, and described RF field is for becoming plasma by process gas ignition in chamber 102.Due to " Kelvin effect " of RF electric current, RF electric current is along the outside traveling of pipeline 118.RF electric current only permeates certain predetermined degree of depth and enters in conductive material.Therefore, RF electric current is along the outside traveling of pipeline 118, and locates process gases and advance in pipeline 118.When locating process gases and advancing in pipeline 118, described place process gases is not excited by RF electric current, because when place's process gases is in pipeline 118, RF electric current is insufficient to far penetrate into pipeline 118 so that place's process gases is exposed to RF electric current.
Place's process gases is fed in chamber 102 by backboard 120.Subsequently, gas expansion is processed in the region 122 between backboard 120 and spray head 104.Subsequently, place's process gases is advanced through the gas passage in spray head 104, and enters processing region 124.
On the other hand, RF electric current does not enter the region 122 between backboard 120 and spray head 104.On the contrary, described RF electric current enters backboard 120 along the outer row of pipeline 118.There, described RF electric current enters along air (such as, the top) skidding of backboard 120.Backboard 120 can be formed by conductive material (such as, aluminum or rustless steel).RF electric current advances to spray head 104 from backboard 120 via support, and described support is made up of conductive material (such as, aluminum or rustless steel).Subsequently, RF electric current is advanced along the surface layer of spray head 104, and wherein, RF (radio frequency) electric current will become plasma by the process gas ignition of gas passage in the processing region 124 being positioned between spray head 104 with substrate 126.In certain embodiments, spray head 104 is made up of conductive material (such as, aluminum or rustless steel).
Due to the plasma generated in processing region 124, material is deposited on substrate 126.Substrate 126 may be provided on pedestal 128, and described pedestal 128 is moveable at loading position and between planting oneself.Pedestal 128 may be provided on stem (stem) 130, and can be mobile by actuator 132.
Forward Fig. 2 to, it is shown that the second embodiment 100' of example PECVD system.It should be noted that use identical Ref. No. to quote the equivalence element from Fig. 1.In the embodiment depicted, matching network 108 ' is integrally formed in cap assemblies 106 '.Cap assemblies 106 ' includes cover plate 107.RF generator 110 is directly installed on cap assemblies 106 ', and is conductively coupled to RF matching network 108 ' via adapter 112 '.As shown in Figure 2, RF matching network 108 ' is directly conductively coupled to the top surface of cover plate 107 of the cap assemblies 106 ' around gas pipeline 118 via adapter 113 '.
Forward Fig. 3 to, it is shown that the 3rd embodiment 100 of example PECVD system ".It should be noted that use identical Ref. No. to quote the equivalence element from Fig. 1.In the embodiment depicted, matching network 108 " be arranged on cap assemblies 106 " basal surface on.RF generator 110 is directly installed on cap assemblies 106 " cover plate 107 on, and via adapter 112 " be conductively coupled to RF matching network 108 ", described adapter 112 " extend through cover plate 107.As shown in Figure 3, RF matching network 108 " via adapter 113 " directly it is conductively coupled to the basal surface of the cover plate 107 around gas pipeline 118.
Forward Fig. 4 to, it is shown that the 4th embodiment 100 of example PECVD system " '.It should be noted that use identical Ref. No. to quote the equivalence element from Fig. 1.In the embodiment depicted, matching network 108 " ' be directly installed on cap assemblies 106 " ' cover plate 107 top surface on.RF generator 110 is also directly installed on cap assemblies 106 " ' cover plate 107 top surface on, and via adapter 112 " ' be conductively coupled to RF matching network 108 " '.As shown in Figure 4, RF matching network 108 " ' via adapter 113 " ' be directly conductively coupled to the top surface of the cover plate 107 around gas pipeline 118.
In addition to PECVD system, embodiment of the present utility model applies also for plasma enhanced atomic layer deposition (PEALD) chamber, physical vapour deposition (PVD) (PVD) chamber, etching chamber and plasma enhanced atomic layer etching (PEALE) chamber.
Describe many embodiments in the disclosure, and present these embodiments merely for illustrative purpose.Described embodiment is not and is all not intended to restrictive.Presently disclosed embodiment of the present utility model is widely applicable for many implementations, as apparent from the disclosure.It will be appreciated by those of ordinary skill in the art that the disclosed embodiments are put into practice in available various amendment and change (such as, structure, logic, software and electricity amendment).Although can refer to one or more specific configuration and/or accompanying drawing describing the special characteristic of the disclosed embodiments, it should be understood, however, that, unless additionally explicitly specified, otherwise this category feature is not limited to use in the one or more specific embodiments describing the reference of described feature time institute or accompanying drawing.
The disclosure, neither the word of all embodiments describes, is not enumerating this utility model feature that must exist in all embodiments.Utility model title (proposing at the beginning of the page 1 of the disclosure) is not to be considered in any way limitative of the scope into disclosed embodiment of the present utility model.
Disclosure a member in those of ordinary skill in the art provides some embodiments and/or the attainable description of utility model.Some in these embodiments and/or utility model can not claim in this application, but can claim in requiring the one or more continuation application of benefit of priority of the application.
Above description only discloses example embodiment of the present utility model.Fall into the amendment to above-disclosed equipment and system in the range of this utility model those skilled in the art be will be apparent from.
Therefore, although disclose this utility model already in connection with exemplary embodiment of the present utility model it should be appreciated that, other embodiments also can fall in the spirit and scope of the present utility model being defined by the appended claims.
Claims (20)
1. a plasma reinforced chemical vapor deposition system, it is characterised in that:
Processing chamber, described process chamber has cap assemblies and spray head；And
RF generator, described RF generator is operable to be provided the power of 10kW or bigger to described spray head by described cap assemblies,
Wherein, described RF generator is close to described cap assemblies and arranges.
Plasma reinforced chemical vapor deposition system the most according to claim 1, it is characterised in that described spray head is conductively coupled to described cap assemblies, and wherein, described RF generator is arranged on described cap assemblies.
Plasma reinforced chemical vapor deposition system the most according to claim 2, it is characterized in that, described cap assemblies includes RF matching network, described RF matching network is coupled between described RF generator and described process chamber, and is operable such that the output impedance matching input impedance to described process chamber of described RF generator.
Plasma reinforced chemical vapor deposition system the most according to claim 3, it is characterised in that described matching network is arranged in described cap assemblies.
Plasma reinforced chemical vapor deposition system the most according to claim 3, it is characterised in that described matching network is arranged on below described cap assemblies.
Plasma reinforced chemical vapor deposition system the most according to claim 1, it is characterised in that described spray head is conductively coupled to described cap assemblies, and wherein, described RF generator is arranged on above described cap assemblies.
Plasma reinforced chemical vapor deposition system the most according to claim 6, it is characterized in that, described cap assemblies includes RF matching network, described RF matching network electric coupling is between described RF generator and described process chamber, and it is operable such that the output impedance matching input impedance to described process chamber of described RF generator, and
Wherein, described matching network is arranged between described RF generator and described cap assemblies.
8. one kind processes Pit cover equipment, it is characterised in that:
Cap assemblies, described cap assemblies can be conductively coupled to spray head；And
RF generator, described RF generator is operable to provide the power of 10kW or bigger to described spray head via described cap assemblies,
Wherein, described RF generator is close to described cap assemblies and arranges.
Equipment the most according to claim 8, it is characterised in that described RF generator is arranged on described cap assemblies.
Equipment the most according to claim 9, it is characterised in that described cap assemblies includes RF matching network, described RF matching network electric coupling between described RF generator and lid coupling, and
Wherein, described RF matching network is operable such that the output impedance matching of described RF generator is to the input impedance processing chamber.
11. equipment according to claim 10, it is characterised in that described matching network is arranged in the cover plate of described cap assemblies.
12. equipment according to claim 10, it is characterised in that described matching network is arranged on below the cover plate of described cap assemblies.
13. equipment according to claim 8, it is characterised in that described RF generator is arranged on the top of described cap assemblies.
14. equipment according to claim 13, it is characterised in that described cap assemblies includes RF matching network, described RF matching network electric coupling between described RF generator and lid coupling,
Wherein, described RF matching network is operable such that the output impedance matching input impedance to process chamber of described RF generator, and
Wherein, described matching network is arranged between described RF generator and the cover plate of described cap assemblies.
15. 1 kinds include the system processing chamber for Cement Composite Treated by Plasma, described process chamber has cap assemblies and spray head, described system is characterised by: RF generator, described RF generator is operable to be provided the power of 10kW or bigger to described spray head by described cap assemblies, wherein, described RF generator is close to described cap assemblies and arranges.
16. systems according to claim 15, it is characterised in that described spray head is conductively coupled to described cap assemblies, and wherein, described RF generator is arranged on described cap assemblies.
17. systems according to claim 16, it is characterized in that, described cap assemblies includes that RF matching network, described RF matching network are coupled between described RF generator and described process chamber, and is operable such that the output impedance matching input impedance to described process chamber of described RF generator.
18. systems according to claim 17, it is characterised in that described matching network is arranged in described cap assemblies.
19. systems according to claim 17, it is characterised in that described matching network is arranged on below described cap assemblies.
20. systems according to claim 15, it is characterized in that, described spray head is conductively coupled to described cap assemblies, described RF generator is arranged on above described cap assemblies, and described cap assemblies includes RF matching network, described RF matching network electric coupling between described RF generator and described process chamber, and be operable such that the output impedance matching of described RF generator to the input impedance of described process chamber, and
Wherein, described matching network is arranged between described RF generator and described cap assemblies.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562219653P | 2015-09-16 | 2015-09-16 | |
| US62/219,653 | 2015-09-16 |
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| Publication Number | Publication Date |
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| CN205741208U true CN205741208U (en) | 2016-11-30 |
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| CN201620044524.5U Active CN205741208U (en) | 2015-09-16 | 2016-01-18 | For the system of plasma process chamber improved and equipment |
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| KR (1) | KR200494683Y1 (en) |
| CN (1) | CN205741208U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019119907A1 (en) * | 2017-12-22 | 2019-06-27 | 江苏鲁汶仪器有限公司 | Vapor deposition device and method |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3820188B2 (en) * | 2002-06-19 | 2006-09-13 | 三菱重工業株式会社 | Plasma processing apparatus and plasma processing method |
| US20070051388A1 (en) | 2005-09-06 | 2007-03-08 | Applied Materials, Inc. | Apparatus and methods for using high frequency chokes in a substrate deposition apparatus |
| US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
| US20080006205A1 (en) * | 2006-07-10 | 2008-01-10 | Douglas Keil | Apparatus and Method for Controlling Plasma Potential |
| KR101502305B1 (en) * | 2007-07-20 | 2015-03-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf choke for gas delivery to an rf driven electrode in a plasma processing apparatus |
| US20100184290A1 (en) * | 2009-01-16 | 2010-07-22 | Applied Materials, Inc. | Substrate support with gas introduction openings |
| KR101352584B1 (en) * | 2011-05-09 | 2014-01-16 | 엘아이지에이디피 주식회사 | Plasma processing apparatus and antenna thereof |
| KR20140086382A (en) * | 2012-12-28 | 2014-07-08 | 주식회사 에스에프에이 | RF Power Feeding Device of Plasma Load including Impedence Changer |
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2016
- 2016-01-18 CN CN201620044524.5U patent/CN205741208U/en active Active
- 2016-09-13 KR KR2020160005377U patent/KR200494683Y1/en active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019119907A1 (en) * | 2017-12-22 | 2019-06-27 | 江苏鲁汶仪器有限公司 | Vapor deposition device and method |
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| KR200494683Y1 (en) | 2021-12-01 |
| KR20170001183U (en) | 2017-03-31 |
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