JP2023507111A - High density plasma chemical vapor deposition chamber - Google Patents

Abstract

The present disclosure relates to methods and apparatus for showerheads for deposition chambers. One embodiment includes a plurality of perforated tiles each coupled to one or more of the plurality of support members and a plurality of inductive couplers in the showerhead, the plurality of inductive couplers in the showerhead. The inductive coupler corresponds to one of the plurality of perforated tiles, and the support member is configured to provide a showerhead for a plasma deposition chamber that supplies a precursor gas to a region formed between the inductive coupler and the perforated tile. is provided. [Selection diagram] Figure 2A

Description

[0001] Embodiments of the present disclosure generally relate to apparatus for processing large area substrates. More specifically, embodiments of the present disclosure relate to chemical vapor deposition systems for device fabrication.

[0002] In the manufacture of solar panels or flat panel displays, thin films are deposited on substrates, such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and/or organic light emitting diode (OLED) substrates, on which electronic devices are fabricated. Many processes are employed to form the Deposition is generally accomplished by introducing precursor gases into a vacuum chamber with the substrate positioned on a temperature-controlled substrate support. Precursor gases are typically directed through a gas distribution plate located near the top of the vacuum chamber. A precursor gas in the vacuum chamber is energized (e.g., excited) into a plasma by applying radio frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead located in the chamber. obtain. The excited gas reacts to form a layer of material on the surface of the substrate positioned on the temperature-controlled substrate support.

[0003] Substrate sizes for forming electronic devices are now routinely exceeding one square meter in surface area. It is difficult to achieve such film thickness uniformity over the entire substrate. Film thickness uniformity becomes more difficult as the substrate size increases. Conventionally, a plasma is formed in a conventional chamber to ionize gas atoms and form radicals, and the radicals of the deposition gas are used to deposit film layers on substrates of this size using a capacitively coupled electrode configuration. Useful. Recently, inductively coupled plasma configurations, which have been used for deposition on round substrates and wafers, have been explored for the deposition process on such large substrates. However, inductive coupling utilizes dielectric materials as structural support components, and these materials withstand the structural loads caused by the presence of atmospheric pressure on one side of the large-area structural portion of the air-side chamber, such large substrates. does not have the structural strength to withstand the other side vacuum pressure conditions used in conventional chambers. Therefore, inductively coupled plasma systems are being developed for large area substrate plasma processing. However, process uniformity, eg, deposition thickness uniformity across large area substrates, is undesirable.

[0004] Accordingly, there is a need for an inductively coupled plasma source for use with large area substrates that is configured to improve film thickness uniformity across the deposition surface of the substrate.

[0005] Embodiments of the present disclosure include methods and apparatus for showerheads and plasma deposition chambers having showerheads capable of forming one or more layers of films on large area substrates.

[0006] In one embodiment, including a plurality of perforated tiles each coupled to one or more of the plurality of support members and a plurality of inductive couplers in the showerhead, wherein of the plurality of inductive couplers: one inductive coupler corresponds to one of the plurality of perforated tiles, and the support member supplies a precursor gas to a region formed between the inductive coupler and the perforated tile for plasma deposition. A chamber showerhead is provided.

[0007] In another embodiment, a showerhead having a plurality of perforated tiles, an inductive coupler corresponding to one or more of the plurality of perforated tiles, and a plurality of support members for supporting each of the perforated tiles. and supplying a precursor gas to a region where one or more of the support members are formed between the inductive coupler and the perforated tile.

[0008] In another embodiment, a showerhead having a plurality of perforated tiles each coupled to one or more of the plurality of support members and a plurality of dielectric plates, wherein the plurality of dielectric plates a plurality of dielectric plates, one of which corresponds to one of the plurality of perforated tiles, and a plurality of inductive couplers, wherein one inductive coupler of the plurality of inductive couplers is a plurality of and the support member includes a plurality of inductive couplers that supply precursor gases to regions formed between the inductive couplers and the perforated tiles. A deposition chamber is provided.

[0009] In another embodiment, the precursor gas is flowed through multiple gas regions of the showerhead, each gas region having a perforated tile and an inductive coupler in electrical communication with the respective gas region. and varying the flow of the precursor gas into each gas region of the showerhead. there is

[0010] So that the features of the disclosure described above may be understood in detail, the disclosure summarized above will now be described more particularly with reference to embodiments, some of which are illustrated in the accompanying drawings. However, the accompanying drawings merely depict exemplary embodiments of the disclosure and are therefore not to be considered limiting of the scope of the disclosure as the disclosure allows for other equally effective embodiments. Note that you can

1 is a cross-sectional side view of an exemplary processing chamber, in accordance with one embodiment of the present disclosure; FIG. 2 is an enlarged view of a portion of the lid assembly of FIG. 1; FIG. FIG. 10 is a top view of one embodiment of a coil; FIG. 2B is a bottom view of one embodiment of the faceplate of the showerhead. FIG. 10 is a partial bottom view of another embodiment of the faceplate of the showerhead; FIG. 10 is a schematic bottom view of another embodiment of flow control for a showerhead; Fig. 3 is a cross-sectional view of a support frame for a showerhead; 1 is a schematic cross-sectional view of one embodiment of an inlet that may be used with the showerheads described herein; FIG. 1 is a plan view of a perforated tile for the showerheads described herein; FIG. 7B is a schematic cross-sectional view showing one of the openings formed in the perforated tile of FIG. 7A; FIG.

[0021] To facilitate understanding, where possible, identical reference numbers are used to designate identical elements that are common to the drawings. It is believed that elements disclosed in one embodiment may be beneficially utilized in other embodiments without further elaboration.

[0022] Embodiments of the present disclosure include processing systems operable to deposit multiple layers on large area substrates. A large area substrate, as used herein, is typically a substrate having major sides with a large surface area, such as a substrate having a surface area of about 1 square meter or more. However, the substrate is not limited to any particular size or shape. In one aspect, the term "substrate" means any polygonal, square, rectangular, curved, or other non-circular workpiece, such as, for example, glass substrates or polymer substrates used in the manufacture of flat panel displays.

[0023] Herein, the showerhead is provided within the processing region of the chamber in multiple independently controlled zones to improve the processing uniformity of the surface of the substrate exposed to the gas within the processing zone. Configured to flow gas through the showerhead. Further, each zone is configured with a plenum, one or more perforated plates between the plenum and the processing area of the chamber, and a coil or portion of the coil dedicated to the zone or individual perforated plates. . A plenum is formed between the dielectric window, the perforated plate, and the surrounding structure. Each plenum is configured to flow and distribute the process gas(es) therein to provide a relatively uniform flow rate, or possibly a regulated flow rate, through the perforated plate and into the processing region. The plenum in some embodiments has a thickness less than twice the thickness of the plasma dark space formed from the process gas(es) at the pressure of the process gas in the plenum. An inductive coupler, in the form of a coil in some embodiments, is positioned behind the dielectric window and inductively couples energy through the dielectric window, plenum, and perforated plate to impinge on the plasma within the processing region. , uphold it. In addition, additional process gas flow is provided in the regions between adjacent perforated plates. The flow of process gas(es) through each zone and the region between the perforated plates is controlled for uniform or regulated gas flow to achieve desired process results on the substrate.

[0024] Embodiments of the present disclosure include high density plasma chemical vapor deposition (HDP CVD) processing chambers operable to form one or more layers or films on a substrate. The processing chambers disclosed herein are adapted to deliver energized species of precursor gases generated within a plasma. A plasma can be generated by inductively coupling energy into a gas under vacuum. Embodiments disclosed herein may be adapted for use with chambers available from AKT America, Inc., a subsidiary of Applied Materials, Inc., Santa Clara, California. It should be appreciated that the embodiments described herein may be implemented with chambers available from other manufacturers as well.

[0025] Figure 1 illustrates a cross-sectional side view of an exemplary processing chamber 100, according to one embodiment of the present disclosure. An exemplary substrate 102 is shown within the chamber body 104 . Processing chamber 100 also includes lid assembly 106 and pedestal or substrate support assembly 108 . A lid assembly 106 is positioned at the upper end of the chamber body 104 and a substrate support assembly 108 is positioned at least partially within the chamber body 104 . Substrate support assembly 108 is coupled to shaft 110 . Shaft 110 is coupled to driver 112 that moves substrate support assembly 108 vertically (Z-direction) within chamber body 104 . The substrate support assembly 108 of the processing chamber 100 shown in FIG. 1 is in the processing position. However, substrate support assembly 108 may be lowered in the Z direction to a position adjacent transfer port 114 . When lowered, lift pins 116 movably disposed on substrate support assembly 108 contact bottom 118 of chamber body 104 . When the lift pins 116 contact the bottom portion 118, the lift pins 116 can no longer move downward with the substrate support assembly 108, and when the substrate receiving surface 120 of the substrate support assembly 108 moves downward therefrom, the substrate 102 moves downward. to maintain a fixed position. An end effector or robot blade (not shown) is then inserted through transfer port 114 between substrate 102 and substrate receiving surface 120 to transfer substrate 102 out of chamber body 104 .

[0026] Lid assembly 106 may include a backing plate 122 that rests on chamber body 104 . Lid assembly 106 also includes a gas distribution assembly or showerhead 124 . Showerhead 124 delivers process gases from a gas source to a processing region 126 between showerhead 124 and substrate 102 . Showerhead 124 is also coupled to a cleaning gas source that provides a cleaning gas, such as a fluorine-containing gas, to process region 126 .

[0027] The showerhead 124 also functions as a plasma source 128 . To function as plasma source 128 , showerhead 124 includes one or more inductively coupled plasma generating components, or coils 130 . Each of the one or more coils 130 may be a single coil 130, two coils 130, or more than two coils 130, hereinafter simply referred to as coils 130. One or more coils 130 are each coupled across power and ground 133 . Showerhead 124 also includes a faceplate 132 that includes a plurality of discrete perforated tiles 134 . The power supply includes a matching circuit or tuning function to adjust the electrical characteristics of coil 130 .

[0028] Each perforated tile 134 is supported by a plurality of support members 136 . Each of the one or more coils 130 or a portion of the one or more coils 130 is positioned on or above a respective dielectric plate 138 . An example of a coil 130 positioned above a dielectric plate 138 within the lid assembly 106 is shown more clearly in FIG. 2A. A plurality of gas regions 140 are defined by the surfaces of dielectric plate 138 , perforated tiles 134 , and support member 136 . The one or more coils 130 each cause, as gas flows into the gas region 140 and through adjacent perforated tiles into the chamber region below, into the plasma within the processing region 126 below the gas region 140: Configured to generate an electromagnetic field that energizes the process gas, process gas from a gas source is supplied to each gas region 140 via conduits in the support member 136 . The volume or flow rate of gas(es) entering and exiting the showerhead is controlled in different zones of the showerhead 124 . Zone control of process gases is provided by a plurality of flow controllers, such as mass flow controllers 142, 143 and 144 shown in FIG. For example, the flow rate of gas to the peripheral or outer zones of showerhead 124 is controlled by flow controllers 142 , 143 and the flow rate of gas to the central zone of showerhead 124 is controlled by flow controller 144 . When cleaning of the chamber is required, cleaning gas from the cleaning gas source is flowed through each gas region 140 and then into the processing region 140, in which the cleaning gas excites ions, radicals, or both. be done. The energized cleaning gas flows through the perforated tiles 134 and into the processing region 126 to clean the chamber components.

[0029] FIG. 2A is an enlarged view of a portion of the lid assembly 106 of FIG. As explained above, precursor gases from gas sources are supplied to gas region 140 through inlets 200 formed through backing plate 122 . Each inlet 200 is coupled to a respective conduit 205 formed in support member 136 . Conduit 205 supplies precursor gas to gas region 140 at outlet opening 210 . Several of the conduits 205 supply gas to two adjacent gas regions 140 (one of the conduits 205 is shown in dashed lines in FIG. 2A). The gas flow to a representative gas region 140 is shown more clearly in FIG.

[0030] Conduit 205 includes a flow restrictor 215 for controlling flow to gas region 140 . The size of flow restrictor 215 can be varied to control gas flow therethrough. For example, flow restrictors 215 each include an orifice of a particular size (eg, diameter) that is utilized to control flow. Additionally, the dimensions of flow restrictor 215 may be varied to provide larger or smaller orifice sizes to control flow therethrough, as desired.

[0031] As shown in FIG. 2A, the perforated tile 134 includes a plurality of openings 218 extending therethrough. Openings 218 are each aligned (concentric) with openings 220 formed in cover plate 222 . A plurality of openings 218 and openings 220 each allow gas to flow from gas region 140 into processing region 126 at a desired flow rate due to the diameter of openings 218 extending between gas region 140 and cover plate 222 . make it possible. The openings 218 and/or 220 and/or the rows and columns of the openings 218 and/or 220 can be sized differently to even out gas flow through each perforated tile 134 and each cover plate 222. and/or can be spaced differently. Alternatively, gas flow from each opening 218 and/or 220 may be non-uniform, depending on desired gas flow characteristics.

[0032] The cover plates 222 each include mounting portions 225 that surround the sides of the perforated tiles 134 . Each mounting portion 225 includes a plurality of openings 230 that allow gas to flow from conduit 205 into secondary plenum 235 and then into processing region 126 .

[0033] Support member 136 is coupled to backing plate 122 by fasteners 240, such as bolts or screws. Support members 136 each support a perforated tile 134 at interface portion 245 of cover plate 222 . Interface portions 245 may each be a ledge or shelf that supports a portion or edge of perforated tile 134 . Interface portion 245 is fastened to support member 136 by fasteners 250, such as bolts or screws. A portion of interface portion 245 includes secondary plenum 235 . Interface portions 245 each also support perimeters or edges of perforated tiles 134 . One or more seals 265 are used to seal the gas region 140 . For example, seal 265 is an elastomeric material such as an O-ring seal or polytetrafluoroethylene (PTFE) joint sealant material. One or more seals 265 may be provided between support member 136 , perforated tile 134 and mounting portion 225 of cover plate 222 . Cover plate 222 is removable to replace one or more perforated tiles 134 as needed.

[0034] In addition, each support member 136 supports a dielectric plate 138 utilizing a ledge 270 extending therefrom (shown in FIG. 2A). In the showerhead 124 /plasma source 128 embodiment, the dielectric plate 138 has a smaller lateral surface area (in the XY plane) compared to the surface area of the entire showerhead 124 /plasma source 128 . A shelf 270 is utilized to support the dielectric plate 138 . The reduced lateral surface area of the plurality of dielectric plates 138 allows the vacuum within the gas region 140 and process region 126 to be reduced without imposing large stresses thereon due to the large area supporting the atmospheric pressure load. It allows the use of dielectric materials as a physical barrier between the environment and plasma and the atmospheric environment in which adjacent coils 130 are typically positioned.

[0035] Seal 265 is used to seal region 275 (which is at atmospheric or sub-atmospheric pressure) from gas region 140 (which is at sub-millitorr range sub-atmospheric pressure during processing). Interface member 280 is shown extending from support member 136 and fasteners 285 are used to secure or press dielectric plate 138 against seal 265 and ledge 270 . A seal 265 may also be used to seal the space between the perforated tile 134 perimeter and the support member 136 .

[0036] Materials for the showerhead 124/plasma source 128 are selected based on one or more of electrical properties, strength, and chemical stability. Coil 130 is made of an electrically conductive material. Backing plate 122 and support member 136 are made of a material capable of supporting the weight and atmospheric pressure load of the components being supported, and may include metal or other similar material. Backing plate 122 and support member 136 may be made of a non-magnetic material (eg, paramagnetic or non-ferromagnetic material), such as an aluminum material. The cover plate 222 is also made of a nonmagnetic material such as a metal material such as aluminum. Perforated tiles 134 are made of a ceramic material such as quartz, alumina, or other similar material. Dielectric plate 138 is made of quartz, alumina or sapphire material.

[0037] FIG. 2B is a top view of one embodiment of coil 130 positioned on dielectric plate 138 in lid assembly 106. FIG. In one embodiment, each planar coil is positioned adjacently by individually forming the illustrated coil configuration on each dielectric plate 138 using the configuration of coil 130 shown in FIG. 2B. The entire coil 130 and showerhead 124 can be serially connected in a desired pattern. Coil 130 includes a conductor pattern 290 having a rectangular spiral shape. Electrical connections include electrical input terminals 295A and electrical output terminals 295B. Each of the one or more coils 130 of the showerhead 124 are connected in series and/or in parallel.

[0038] FIG. 3A is a bottom view of one embodiment of the faceplate 132 of the showerhead 124. As shown in FIG. As noted above, the showerhead 124 is configured to include one or more zones with independently controlled gas flow to each zone. For example, faceplate 132 includes central zone 300A, intermediate zones 300B ₁ and 300B ₂ , and outer zones 300C ₁ and 300C ₂ .

[0039] The showerhead 124 includes a gas distribution manifold 305 that controls gas flow to each of the central zone 300A, middle zones _300B1 and _300B2 , and outer zones _300C1 and _300C2 . Gas flow to the zones is controlled by a plurality of flow controllers 310, flow controllers 142, 143, and 144 shown in FIG. Flow controllers 310 may each be a needle valve or a mass flow controller. Flow controller 310 may also include a diaphragm valve to start or stop gas flow.

[0040] FIG. 3B is a partial bottom view of another embodiment of the faceplate 132 of the showerhead 124. As shown in FIG. In this embodiment, perforated tile 134 is supported by cover plate 222 . Perforated cover plate 222 is secured to support member 136 using fasteners 250, which are behind cover plate 222 in this view and are not shown.

[0041] FIG. 4 is a schematic bottom view of another embodiment of the showerhead 124 illustrating the gas flow injection pattern into the gas regions 140 formed within the showerhead 124. As shown in FIG. The length 400 and width 405 of the substrate are shown on the sides of the showerhead 124 . Precursor flow into gas region 140 can be supplied unidirectionally, as indicated by arrows 410 , or bidirectionally, as indicated by arrows 415 . Precursor flow control may be provided by flow controllers 142, 143 and 144 (shown in FIG. 1). Additionally, gas flow zones such as edge zone 420, corner zone 425, and central zone 430 may be provided by flow controllers 142, 143, and 144 (shown in FIG. 1). The flow rate of precursor to each of the gas regions 140 and/or zones can be adjusted by varying the size of one or a combination of openings 220, openings 230 and flow restrictor 215 (all shown in FIG. 2A). .

[0042] The flow rate to each gas region 140 may be the same or different. The flow rate to gas region 140 may be controlled by mass flow controllers 142, 143 and 144 shown in FIG. The flow into gas region 140 may also be controlled by sizing flow restrictor 215, as described above. The flow rate to the processing area 126 can be controlled by the size of the openings 220 in the perforated tiles 134 as well as the size of the openings 230 in the cover plate 222 . Bidirectional or unidirectional flow into gas region 140 is used as needed to provide sufficient gas flow to processing region 126 .

[0043] The method of controlling gas flow includes: 1) multi-zone (central/edge/corner/any other zone) control using different flow rates from mass flow controllers 142, 143, 144, 2) different orifice sizes ( 3) directional flow control (either unidirectional or bidirectional) into the gas region 140; Including flow control by the number of sections 220 and/or the location of the openings 220 in the perforated tile 134 . The mass flow rate of the gas supplied by the showerhead 124 described herein reduces the non-uniformity percentage (NU%) from about 280% (e.g., from 57% non-uniformity (prior art) to about 15%). non-uniformity).

[0044] FIG. 5 is a bottom cross-sectional view of support frame 500 taken along the cross-sectional line shown in FIG. The support frame 500 is composed of a plurality of support members 136 . Support frame 500 in FIG. 5 has been cut along the cross-section of conduit 205 to reveal various diameters (orifice sizes) of flow restrictor 215 . In one embodiment, the various orifices of each flow restrictor 215 may be varied or configured based on desired gas flow characteristics.

[0045] The flow restrictors 215 in this embodiment each include a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515. As shown in FIG. Each diameter of first diameter portion 505, second diameter portion 510, and third diameter portion 515 may be different or the same. Each diameter can be selected based on the desired flow characteristics of showerhead 124 . In one embodiment, first diameter portion 505 here has the smallest diameter, third diameter portion 515 here has the largest diameter, and second diameter portion 510 has the largest diameter. It has a diameter between diameter portion 505 and a third diameter portion 515 . In the illustrated embodiment, a plurality of flow restrictors 215 having a first diameter portion 505 are shown in the central portion of the support frame 500 and a plurality of flow restrictors 215 having a third diameter portion 515 are shown in the support frame 500. Shown on the outer part.

[0046] Additionally, a plurality of flow restrictors 215 having a second diameter portion 510 are shown in the intermediate zone between the central portion and the outer portion. In another embodiment, the location of flow restrictor 215 having first diameter portion 505, second diameter portion 510, and third diameter portion 515 is located at a portion of support frame 500, as shown in FIG. It can be vice versa. Alternatively, flow restrictor 215 , having first diameter portion 505 , second diameter portion 510 and third diameter portion 515 , may be used in various configurations of support frame 500 depending on desired characteristics and control through gas region 140 . may be located in In some embodiments, uniform gas flow across showerhead 124 may be desirable. However, in other embodiments, the gas flow to each gas region 140 of showerhead 124 may not be uniform. Non-uniform gas flow may result from some physical structure(s) and/or geometry of processing chamber 100 . For example, it may be desirable to have more gas flow in the portion of showerhead 124 adjacent transfer port 114 (shown in FIG. 1) compared to gas flow in other portions of showerhead 124 .

[0047] Figure 6 is a schematic cross-sectional view of one embodiment of an inlet 200 that may be used with the showerheads 124 described herein. Inlet 200 includes conduit 205 that includes flow restrictor 215 as described in FIG. 2A. In some embodiments, the diameter 600 of the outlet opening 210 of the flow restrictor 215 includes a first size 605A of about 1.4 millimeters (mm) to about 1.6 mm. In other embodiments, the diameter 600 of the outlet opening 210 of the flow restrictor 215 includes a second size 605B from about 1.9 mm to about 2.1 mm. The diameter 600 of the exit opening 210 varies across the dimensions (eg length/width) of the showerhead 124 . For example, a flow restrictor 215 having a first size 605A can be used in central zone 300A, as described above in FIG. 3A. A flow restrictor 215 having a second size 605B may be used in zones of the showerhead 124 other than the central zone 300A (e.g., middle zones 300B ₁ and 300B ₂ and outer zones 300C ₁ and 300C, as described in FIG. 3A above). ₂ ). Additionally, the flow restrictor 215 includes a length 610 that may vary within the showerhead 124 . In some embodiments, length 610 includes first length 615A, which can be from about 11 mm to about 12 mm. In other embodiments, the length 610 of the flow restrictor 215 includes a second length 615B of about 22mm to about 24mm. A flow restrictor 215 having a first length 615A may be used in the central zone 300A as described above in FIG. 3A. A flow _restrictor 215 having a second length 615B extends to zones of the showerhead ₁₂₄ other than the central zone _300A as described above in FIG. 300C ₂ ). It should be noted that the term "about" in relation to "size" and/or "length" as described above is ±0.01 mm.

[0048] Figures 7A and 7B are various views of one embodiment of a perforated tile 134 that may be used with the showerheads 124 described herein. 7A is a bottom view of a first side 700 of perforated tile 134 facing cover plate 222 (shown in FIG. 2A). FIG. 7B is a schematic cross-sectional view of one of the openings 218 formed in the perforated tile 134. FIG.

[0049] The perforated tile 134 includes a body 705 made of a ceramic material such as alumina ( _Al2O3 ) _. Body 705 includes a first side 700 and a second side 710 opposite first side 700 (shown in FIG. 7B). First surface 700 and second surface 710 are generally parallel. At least the second surface 710 has a flatness (according to engineering tolerances as defined by the Geometrical and Tolerancing (GD&T)) of about 0.005 inch or less. Peripheral edge 720 of body 705 includes a plurality of openings 218 formed between first surface 700 and second surface 710 .

[0050] First surface 700 includes concave surface 715 that joins between first surface 700 and peripheral edge 720 of body 705 . Concave surface 715 includes a transition region 725 . Transition region 725 may be a sharp shoulder or ramp that begins at the edge of first face 700 and extends to peripheral edge 720 of body 705 . Transition region 725 includes rounded corners 730 . Perimeter 720 of body 705 includes square corners 735 .

[0051] One of the plurality of openings 218 is shown in FIG. 7B. Aperture 218 includes an entry hole or first hole 740 formed in second surface 710 . Aperture 218 also includes an exit hole or second hole 745 formed in first surface 700 . First hole 740 and second hole 745 are fluidly connected by stepped hole 750 . First hole 740 and second hole 745 each include flared sidewalls 755 . Flared sidewalls 755 may include an angle α of about 90 degrees (eg, about 45 degrees from the plane of surfaces 700 and 710).

[0052] The stepped bore 750 includes a first orifice 760 and a second orifice 765 . First orifice 760 includes diameter 770 and second orifice 765 includes diameter 775 . Diameter 775 is larger than diameter 770 . A flared portion 780 is provided between the first orifice 760 and the second orifice 765 . Flared portion 780 includes an angle α of approximately 90 degrees. Diameter 770 may be from about 0.017 inch to about 0.018 inch.

[0053] Embodiments of the present disclosure include methods and apparatus for showerheads and plasma deposition chambers having showerheads capable of forming one or more layers of films on large area substrates. Gas (or precursor) flow, as well as plasma uniformity, can be controlled by individual perforated tiles 134, coils 130 dedicated to specific ones of perforated tiles 134, and/or combinations of configurations of flow controllers 142, 143, 144; and by varying the size and/or position of flow restrictor 215 .

[0054] While the above is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from its basic scope as determined by the following claims. It is possible.

Claims (15)

A plasma deposition chamber comprising:
a showerhead having a plurality of perforated tiles each coupled to one or more of the plurality of support members;
a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated tiles;
a plurality of inductive couplers, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of dielectric plates, and the support member comprises the inductive coupler and the A plurality of inductive couplers comprising a plurality of inlets for supplying precursor gases to regions formed between perforated tiles, each of said inlets having a flow restrictor comprising a diameter that varies across said showerhead. and a plasma deposition chamber. 3. The chamber of Claim 1, wherein each of said inlets comprises a conduit having a first diameter and a second diameter. 3. The chamber of claim 1, wherein each of said flow restrictors includes a length that varies across said showerhead. 3. The chamber of claim 1, further comprising a dielectric plate associated with each of said inductive couplers, said dielectric plate bounding one side of said region. 3. The chamber of Claim 1, wherein said plurality of perforated tiles and said plurality of support members each include an interface portion. 3. The chamber of claim 1, further comprising a cover plate positioned around each of said perforated tiles. 7. The chamber of Claim 6, wherein the cover plate includes an opening formed therein. 8. The chamber of claim 7, wherein each perforated tile includes openings aligned with openings formed in the cover plate. 3. The chamber of Claim 1, wherein the showerhead is divided into separate gas delivery zones including a central zone, an intermediate zone adjacent to the central zone, and an outer zone adjacent to the intermediate zone. A showerhead for a plasma deposition chamber, comprising:
A support member including a plurality of first support surfaces and a plurality of second support surfaces, wherein the plurality of first support surfaces extends in a first direction from the plurality of second support surfaces to the first support surface. a support member positioned at a distance;
a plurality of gas distribution assemblies including a plurality of perforated tiles and a plurality of dielectric plates, each of the plurality of gas distribution assemblies comprising:
a perforated tile positioned on a first one of the plurality of first support surfaces;
a dielectric plate positioned on a second one of the plurality of second support surfaces, wherein a gas region is defined between a surface of the dielectric plate and a surface of the perforated tile. , a plurality of gas supply assemblies, and
a plurality of inlets for supplying precursor gases to gas regions of the plurality of gas delivery assemblies, each inlet having a flow restrictor including a varying length across the showerhead;
and coils positioned over one or more of the plurality of gas distribution assemblies within the showerhead. 11. The showerhead of Claim 10, wherein each inlet comprises a conduit having a first diameter and a second diameter. 11. The showerhead of claim 10, wherein each flow restrictor includes a diameter that varies across the showerhead. 11. The showerhead of claim 10, wherein the dielectric plate bounds one side of the gas region. 11. The showerhead of Claim 10, wherein each of the plurality of perforated tiles and the support member includes an interface portion. 11. The showerhead of Claim 10, further comprising a cover plate positioned around each of said perforated tiles.

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