KR20140086382A - RF Power Feeding Device of Plasma Load including Impedence Changer - Google Patents

RF Power Feeding Device of Plasma Load including Impedence Changer Download PDF

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KR20140086382A
KR20140086382A KR1020120156789A KR20120156789A KR20140086382A KR 20140086382 A KR20140086382 A KR 20140086382A KR 1020120156789 A KR1020120156789 A KR 1020120156789A KR 20120156789 A KR20120156789 A KR 20120156789A KR 20140086382 A KR20140086382 A KR 20140086382A
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South Korea
Prior art keywords
impedance
frequency power
power supply
high frequency
matcher
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KR1020120156789A
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Korean (ko)
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최상돈
김준수
권상교
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주식회사 에스에프에이
주식회사 뉴파워 프라즈마
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Priority to KR1020120156789A priority Critical patent/KR20140086382A/en
Publication of KR20140086382A publication Critical patent/KR20140086382A/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

The RF power supply apparatus for a plasma load according to an embodiment of the present invention includes a high frequency power source for outputting high frequency power, an impedance matcher connected between the high frequency power source and the plasma load to perform a first impedance conversion, And an impedance converter connected in series to perform a second impedance conversion, wherein the first impedance conversion adjusts the magnitude and phase of the output impedance, and the second impedance conversion adjusts the magnitude of the output impedance.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a high-frequency power supply device for a plasma load including an impedance converter,

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a high-frequency power supply apparatus for a plasma load, and more particularly, to a high-frequency power supply apparatus for a plasma load including an impedance converter.

Semiconductors and flat panel displays are widely used in personal computers, memories and monitors for TVs and computers. Such a flat display is variously classified into an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel) and an OLED (Organic Light Emitting Diodes).

The manufacturing process of the semiconductor and the flat display may include a chemical vapor deposition process (Chemical Vapor Deposition Process). The chemical vapor deposition process is one of the deposition processes, and is a process of plasma-depositing a process gas, which is a deposition material having a high energy, onto a glass substrate. This process takes place in a plasma load, such as a chamber.

A high-frequency power supply is connected to the chamber to plasmaize the process gas. The high frequency power supply device is composed of a radio frequency (RF) power source, an impedance matching device, and an RF line. The impedance matcher is composed of variable reactances (L, C). The larger the conversion ratio, the smaller the frequency bandwidth and the larger the power loss. The RF line has an inductance component by its length, and the bandwidth is reduced by the inductance component.

Korean Patent No. 10-0764627, Oct. 1, 2007, SFA

It is a technical object of the present invention to provide a high-frequency power supply device of a plasma load that reduces a conversion ratio of an impedance matcher and increases a bandwidth.

According to an embodiment of the present invention, there is provided a high-frequency power supply apparatus for supplying high-frequency power with a plasma load, the apparatus comprising: a high-frequency power supply for outputting the high-frequency power; a first impedance conversion unit connected between the high- And an impedance converter connected in series to the impedance matcher to perform a second impedance conversion, wherein the first impedance conversion adjusts the magnitude and phase of an output impedance of the high frequency power supply device, 2 impedance conversion provides a high frequency power supply of a plasma load that adjusts the magnitude of the output impedance.

The impedance transducer may include a cable impedance transducer in which a plurality of cables are connected in parallel.

Each of the plurality of cables may be a 50-ohm coaxial cable.

The impedance transducer may include a transformer.

The conversion ratio of the impedance matcher may be smaller than a ratio between an internal impedance of the high frequency power source and an impedance of the plasma load.

The value obtained by multiplying the conversion ratio of the impedance matcher and the impedance converter may be equal to a ratio between an internal impedance of the high frequency power source and an impedance of the plasma load.

The impedance matcher impedance-converts the internal impedance of the high-frequency power source, and the impedance converter is connected between the impedance matcher and the plasma load to impedance-convert the output impedance of the impedance matcher.

The impedance converter is connected between the high frequency power source and the impedance matcher to fixedly convert the output impedance of the impedance matcher and the output impedance of the high frequency power supply device.

The impedance matcher may include a variable capacitor or a variable inductor.

The impedance matcher may vary the impedance of the capacitor and the inductor according to the impedance of the plasma load.

According to the present invention, by using an impedance converter in addition to the impedance matcher, the conversion ratio of the impedance matcher can be lowered. Therefore, the loss occurring in the power transmission and the manufacturing cost of the impedance matcher are reduced, and the matching speed is increased.

Meanwhile, the length of the RF transmission line can be reduced by replacing a portion of the RF line with an impedance converter. Therefore, the reactance component to be matched by the impedance matcher decreases and the bandwidth increases. Thereby, the stability of the chemical vapor deposition apparatus is improved, and the volume and manufacturing cost are reduced.

1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention.
2 is a circuit diagram showing a high-frequency power supply apparatus according to an embodiment of the present invention.
3 is a circuit diagram showing a high-frequency power supply apparatus according to another embodiment of the present invention.
4 is a structural diagram of an impedance converter according to an embodiment of the present invention.
5 is a circuit diagram of an impedance converter according to another embodiment of the present invention.

It is to be understood that the specific structural or functional descriptions of embodiments of the present invention disclosed herein are only for the purpose of illustrating embodiments of the inventive concept, But may be embodied in many different forms and is not limited to the embodiments set forth herein.

Embodiments in accordance with the concepts of the present invention are capable of various modifications and may take various forms, so that the embodiments are illustrated in the drawings and described in detail herein. It should be understood, however, that it is not intended to limit the embodiments according to the concepts of the present invention to the particular forms disclosed, but includes all modifications, equivalents, or alternatives falling within the spirit and scope of the invention.

The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are intended to distinguish one element from another, for example, without departing from the scope of the invention in accordance with the concepts of the present invention, the first element may be termed the second element, The second component may also be referred to as a first component.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between. Other expressions that describe the relationship between components, such as "between" and "between" or "neighboring to" and "directly adjacent to" should be interpreted as well.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises ", or" having ", or the like, specify that there is a stated feature, number, step, operation, , Steps, operations, components, parts, or combinations thereof, as a matter of principle.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the meaning of the context in the relevant art and, unless explicitly defined herein, are to be interpreted as ideal or overly formal Do not.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings.

1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention.

As shown in this figure, a chemical vapor deposition apparatus 1 for a flat panel display according to an embodiment of the present invention includes a chamber 10 and a flat display G A susceptor 30 disposed below the electrode 16 and being loaded with a flat display G and a susceptor 30 disposed below the susceptor 30, And a plurality of susceptor supports 40 for supporting the susceptors 30 in the susceptor 30.

The outer wall of the chamber 10 is shielded from the outside so that the deposition space S therein can be maintained in a vacuum atmosphere. An inert gas (He, Ar) may be used in the deposition space S of the chamber 10 for the stability of discharge without affecting the silicon compound, which is an evaporation material emitted from the electrode 16

An opening 10a is formed in the outer wall of the chamber 10, which is a passage through which the flat display G is flown in and out of the chamber 10 by a predetermined work robot. Although not shown, the opening 10a is selectively opened and closed by a door (not shown).

A gas diffusion plate 12 for diffusing the gas existing in the deposition space S in the chamber 10 back into the deposition space S is provided on the bottom surface 11 in the chamber 10. A through hole 10b through which the column 32 of the susceptor 30 penetrates is formed in a central region of the bottom surface 11 in the chamber 10. An additional through hole 10c through which the shaft portion 42 of the susceptor support 40 passes is formed in the periphery of the through hole 10b.

The electrodes 16 are provided in the upper region within the chamber 10. A plurality of orifices are formed in the lower portion of the electrode 16 to provide a gas distribution plate 17 for distributing a silicon compound as a deposition material. The gas distribution plates 17 are disposed in parallel to the substrate loading portions 31 of the susceptor 30 at predetermined intervals (for example, on the order of several tens of millimeters).

Here, the flat display G may be any one of a cathode ray tube (CRT), a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED) It is not.

However, in the present embodiment, the large glass substrate G for an LCD (Liquid Crystal Display) is referred to as a flat display G. And large size refers to the size of the level applied to more than the fifth generation or the eighth generation. Hereinafter, the flat display G will be referred to as a glass substrate G. [

A gas supply portion for supplying a process gas into the chamber 10 is provided on the outer side of the chamber 10. The gas supply part may be configured to include a gas supply source 9 (for example, a gas supply tank) and a remote plasma part 18. The gas supply units 9 and 18 are connected to the inside of the chamber 10 through a gas supply pipe 26. That is, the process gas is supplied from the gas supply units 9 and 18 to the inside of the chamber 10 through the gas supply pipe 26. The remote plasma unit 18 also serves as a supply path for the process gas and also supplies a predetermined cleaning gas for removing the impurities remaining in the chamber 10. [ When the remote plasma section 18 is provided as described above, the process gas is supplied from the gas supply source 8 to the inside of the chamber 10 via the remote plasma section 18 and the gas supply tube 24, but the remote plasma section 18 are not provided, the process gas is supplied from the gas supply source 9 to the inside of the chamber 10 through the gas supply pipe 26.

A high-frequency power supply device 100 may be installed around the gas supply pipe 26. The high frequency power supply apparatus 100 may include a high frequency power supply unit 20, an impedance converter 24, and an RF line 22. The RF power supply unit 20 may be connected to the electrodes 16 in the chamber 10 through the impedance converter 24 and the RF line 22. The chamber 10 can perform the deposition process for the flat panel display G using the high frequency power output from the RF power supply unit 20. [

The impedance converter 24 is inserted between the RF power supply unit 20 and the RF line 22 without using the RF line 22 to connect the RF power supply unit 20 and the electrode 16, The amount of reactance, that is, the amount of reactance, is reduced.

However, the scope of the present invention is not limited to the embodiment shown in Fig. According to the embodiment, the impedance converter 24 may be included in the high frequency power supply 20. According to another embodiment, the impedance converter 24 can be connected between the high-frequency power supply unit 20 and the electrode 16 without using the RF line 22 separately. According to another embodiment, the RF line 22 may be connected to the RF power supply 20 and the electrode 16, respectively, and the impedance converter 24 may be inserted between the RF lines 22.

2 is a circuit diagram showing a high-frequency power supply apparatus according to an embodiment of the present invention.

2, the high-frequency power supply apparatus 100a includes a high-frequency power supply section 20a, an impedance converter 24a, and an RF line 22a. The high-frequency power supply unit 20a includes a high-frequency power supply 210a and an impedance matcher 220a.

The high-frequency power supply device 100a is connected to the chamber 10. The chamber 10 may be represented by an equivalent circuit in which a resistor R and a capacitor C are connected in parallel. Hereinafter, the impedance of the chamber 10 is defined as Z = R + jX, where R denotes a real part and X denotes an imaginary part. The resistance R of the chamber 10 may have a value smaller than the internal impedance Z1 of the high frequency power source 210a. Hereinafter, the resistance R of the chamber 10 is assumed to be 1 ohm.

When the output impedance Z4 of the high-frequency power supply 100a has the value R-jX, the maximum power is delivered to the chamber 10. [ The output impedance Z4 of the high-frequency power supply device 100a is determined according to the conversion ratio of the impedance matcher 220a and the conversion ratio of the impedance converter 24a.

The high frequency power source 210a outputs high frequency power. The internal impedance Z1 of the high frequency power supply unit 20a may have the same characteristic impedance as a cable (not shown) connected between the high frequency power supply 210a and the impedance matcher 220a. For example, the internal impedance Z1 of the high-frequency power supply unit 20 may be 50 ohms, and the internal impedance Z1 of the high-frequency power supply unit 20 is assumed to be 50 ohms.

The impedance matcher 220a is connected between the high frequency power source 210a and the chamber 10 and can perform the first impedance conversion according to the conversion ratio of the impedance matcher 220a. The output impedance Z2 of the impedance matcher 220a is set to a value obtained by multiplying the internal impedance Z1 of the high frequency power source 210a by the conversion ratio of the impedance matcher 220a. The conversion ratio of the impedance matcher 220a may be a complex number. Therefore, the first impedance conversion can adjust the magnitude and phase of the output impedance Z4.

The impedance matcher 220a may include a first variable capacitor CM1, a second variable capacitor CM2, and a variable inductor 221a. The first variable capacitor CM1 and the variable inductor 221a are connected in series between the input terminal and the output terminal of the impedance matcher 220a and the second variable capacitor CM2 is connected to the input terminal of the impedance matcher 220a Can be connected in parallel.

The resistance of the chamber 10 may vary during the deposition process. Thus, the impedance Z of the chamber 10 may change with time. The impedance matcher 220a can vary the conversion ratio of the impedance matcher 220a according to the result of measuring the impedance Z of the chamber 10 every predetermined time. The impedance matcher 220a can vary the conversion ratio of the impedance matcher 220a by varying the values of the first variable capacitor CM1, the second variable capacitor CM2 and the variable inductor 221a.

The impedance converter 24a is connected in series to the impedance matcher 220a. The impedance converter 24a is connected between the impedance matcher 220a and the chamber 10 and can perform the second impedance conversion according to the conversion ratio of the impedance converter 24a. According to the second impedance conversion, the output impedance Z3 of the impedance converter 24a is set to a value obtained by multiplying the output impedance Z2 of the impedance matcher 220a by the conversion ratio of the impedance converter 24a. The conversion ratio of the impedance converter 24a may be a real number. Therefore, the second impedance conversion can adjust the magnitude of the output impedance Z4.

When the impedance Z1 of the RF power supply 210a is matched with the impedance Z of the chamber 10 by using only the impedance matcher 220a, the conversion ratio of the impedance matcher 220a is set to the high frequency power source 210a, And the impedance Z of the chamber 10, as shown in FIG. Therefore, the conversion ratio of the impedance matcher 220a is large, so that a loss occurs during power transmission.

The impedance converter 24a is additionally used and the conversion ratio of the impedance matcher 220a is set to be smaller than the ratio between the internal impedance Z1 of the high frequency power source 210a and the impedance of the chamber 10. [ The value obtained by multiplying the conversion ratio of the impedance matcher 220a and the impedance converter 24a may be equal to the ratio between the impedance Z1 of the high frequency power source 210a and the impedance of the chamber 10.

For example, when the impedance Z1 of the high-frequency power source 210a is 50 ohms and the impedance Z of the chamber 10 is 1 ohm, only the impedance matcher 220a is used. If the impedance ratio Za of the impedance matcher 220a Should be 50: 1. However, by further using the impedance converter 24a, it is possible to perform a 5: 1 conversion in the impedance matcher 220a and a 10: 1 conversion in the impedance converter 24a.

Therefore, according to the embodiment of the present invention, there is an effect that the conversion ratio of the impedance matching device 220a is lowered to reduce the manufacturing cost of the power loss and impedance matching device 220a and increase the matching speed.

The RF line 22a is connected between the impedance converter 24a and the chamber 10 to transmit the RF power to the chamber 10. The RF line 22a has an inductance (L) component.

However, according to another embodiment, the impedance converter 24a may be connected between the RF power supply 20a and the chamber 10 without using the RF line 22. [

In the embodiment shown in Fig. 2, an impedance converter 24a is connected between the impedance matcher 220a and the RF line 22a to reduce the inductance L of the RF line 22a. As a result, the reactance component to be matched decreases, thereby increasing the bandwidth.

The narrower the bandwidth, the more the reflected power is maximized even when a slight mismatch occurs, so that the high frequency power source 210a becomes unstable and low frequency oscillation may occur. Scattering occurs in the electric power transmitted to the chamber 10, and scattering may occur in the process result. In addition, the voltage applied to the RF line 22a increases, so that insulation failure may occur and the possibility of arc generation increases. Therefore, since a high withstand voltage design is required, the cost and the volume of the chemical vapor deposition apparatus 1 for a flat display are increased.

According to the embodiment of the present invention, since the bandwidth is increased, the stability of the chemical vapor deposition apparatus 1 for a flat display can be improved. On the other hand, since the reactance component to be matched is reduced, the volume and manufacturing cost of the impedance matching device 220a are reduced.

3 is a circuit diagram showing a high-frequency power supply apparatus according to another embodiment of the present invention.

Referring to FIG. 3, the high-frequency power supply device 100b includes a high-frequency power supply unit 20b and an RF line 22b. The high-frequency power supply unit 20b includes a high-frequency power supply 210b, an impedance converter 24b, and an impedance matcher 220b. The configuration of the high-frequency power supply device 100b of FIG. 3 is substantially the same as that shown in FIG. 2. Therefore, for convenience of description, differences will be mainly described below.

The impedance converter 24b may be connected between the high frequency power source 210b and the impedance matcher 220b. The impedance converter 24b impedance-converts the internal impedance Z5 of the high-frequency power supply 210b. That is, the output impedance Z6 of the impedance converter 24b is set to a value obtained by multiplying the internal impedance Z5 of the high-frequency power supply 210b by the conversion ratio of the impedance converter 24b.

The impedance matcher 220b may be connected between the impedance converter 24b and the RF line 22b. The impedance matcher 220b impedance-converts the output impedance Z6 of the impedance converter 24b. That is, the output impedance Z7 of the impedance matcher 220b is set to a value obtained by multiplying the output impedance Z6 of the impedance converter 24b by the conversion ratio of the impedance matcher 220b.

4 is a structural diagram of an impedance converter according to an embodiment of the present invention.

Referring to FIG. 4, the impedance converter may be a cable impedance converter 24-1. The cable impedance converter 24-1 can be realized by connecting a plurality of cables Cb1, Cb2, Cb3 in parallel. Each of the plurality of cables Cb1, Cb2, Cb3 may be a 50-ohm coaxial cable having a length of a quarter wavelength.

When the cable impedance transducer 24a is implemented by connecting m (m is an integer of 2 or more) cables in parallel, the conversion ratio of the cable impedance converter 24a is m 2 : 1.

The cable impedance conversion formula can be expressed by Equation (1).

Figure pat00001

In Equation (1), P represents power, and impedance is matched when P = 1. When m cables are connected in parallel, the cable impedance increases by 1 / m, so the current increases by m times. Therefore, the output impedance Z3a of the cable impedance converter 24a has a value obtained by dividing the output impedance Z2a of the cable impedance converter 24a by m 2 .

The impedance converter shown in Fig. 4 is an embodiment in which three 50-ohm cables are connected in parallel to increase the current three-fold. However, according to the embodiment, the impedance converter 24a may be implemented using one coaxial cable of less than 50 ohm impedance.

That is, the characteristics of the cable may vary depending on the diameter of the inner core, so that the impedance converter 24a can be implemented using only one 50 / m-ohm cable.

5 is a circuit diagram of an impedance converter according to another embodiment of the present invention.

Referring to FIG. 5, the impedance converter may be a transformer 24b. When the transforming ratio of the transformer 24b is n1: n2 (n1 and n2 are natural numbers), the impedance conversion ratio of the transformer 24b is n1 2 : n2 2 . That is, the output impedance Z3b of the transformer 24b is equal to the output impedance Z2b of the front end of the transformer 24b

Figure pat00002
.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

1: chemical vapor deposition apparatus 10: chamber
16: electrode 17: gas distribution plate
18: Remo plasma part 20: RF power part
22: RF line 24: Impedance transducer
26: gas supply pipe 210: high frequency power source
220: Impedance matcher

Claims (8)

A high-frequency power supply apparatus for supplying a high-frequency power with a plasma load,
A high frequency power supply for outputting the high frequency power;
An impedance matcher connected between the high frequency power source and the plasma load to perform a first impedance conversion; And
And an impedance converter connected in series to the impedance matcher to perform a second impedance conversion,
The first impedance transform
Adjusting the magnitude and phase of the output impedance of the high-frequency power supply device,
The second impedance transform
And adjusts the magnitude of the output impedance. 2. The apparatus of claim 1, wherein the impedance transducer
A high-frequency power supply for a plasma load comprising a cable impedance transducer in which a plurality of cables are connected in parallel. 2. The apparatus of claim 1, wherein the impedance transducer
A high frequency power supply for a plasma load comprising a coaxial cable having a impedance of less than 50 ohms. 2. The apparatus of claim 1, wherein the impedance transducer
A high-frequency power supply for a plasma load comprising a transformer. The impedance matching device according to claim 1, wherein the conversion ratio of the impedance matcher
Wherein a ratio between an internal impedance of the high frequency power source and an impedance of the plasma load is smaller than a ratio between the internal impedance of the high frequency power source and the impedance of the plasma load. 6. The method of claim 5, wherein the value obtained by multiplying the conversion ratio of the impedance matcher
Wherein a ratio between an internal impedance of the high frequency power supply and an impedance of the plasma load is equal to a ratio of the internal impedance of the high frequency power supply to the impedance of the plasma load. The impedance matching device according to claim 1, wherein the impedance matcher
Converts the internal impedance of the high frequency power supply to impedance,
The impedance converter
And an impedance matching device connected between the impedance matching device and the plasma load for impedance-converting an output impedance of the impedance matching device. 2. The apparatus of claim 1, wherein the impedance transducer
And an impedance matching circuit connected between the high frequency power supply and the impedance matching device to impedance-convert the internal impedance of the high frequency power supply,
The impedance matcher
Wherein the output impedance of the impedance converter is impedance-transformed.
KR1020120156789A 2012-12-28 2012-12-28 RF Power Feeding Device of Plasma Load including Impedence Changer KR20140086382A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170001183U (en) * 2015-09-16 2017-03-31 어플라이드 머티어리얼스, 인코포레이티드 Systems, apparatus, and methods for an improved plasma processing chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170001183U (en) * 2015-09-16 2017-03-31 어플라이드 머티어리얼스, 인코포레이티드 Systems, apparatus, and methods for an improved plasma processing chamber

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