CN116926511A - Vapor deposition apparatus and wafer stress adjustment method - Google Patents
Vapor deposition apparatus and wafer stress adjustment method Download PDFInfo
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- CN116926511A CN116926511A CN202311198423.4A CN202311198423A CN116926511A CN 116926511 A CN116926511 A CN 116926511A CN 202311198423 A CN202311198423 A CN 202311198423A CN 116926511 A CN116926511 A CN 116926511A
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 36
- 230000000903 blocking effect Effects 0.000 claims abstract description 60
- 230000008021 deposition Effects 0.000 claims abstract description 55
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000009826 distribution Methods 0.000 abstract description 5
- 239000007888 film coating Substances 0.000 abstract description 2
- 238000009501 film coating Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 125
- 239000007789 gas Substances 0.000 description 97
- 230000035882 stress Effects 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application discloses vapor deposition equipment and a wafer stress adjustment method, and relates to the technical field of semiconductors. The vapor deposition apparatus includes a deposition chamber, a first gas supply assembly, and a barrier disk assembly. The first air supply assembly is used for providing process gas to the back of the wafer, the blocking disc assembly comprises a blocking disc and a rotary driving piece, the blocking disc is rotatably arranged in an air flow path formed by the first air supply assembly, the blocking disc is provided with a blocking area and an avoidance area in the circumferential direction around the rotation axis, the process gas can reach the back of the wafer through the avoidance area, the rotary driving piece is used for driving the blocking disc to rotate around the rotation axis so as to adjust the positions of the avoidance area and the blocking area in the circumferential direction, and therefore the deposition area of the back of the wafer is adjusted. Therefore, the equipment can more flexibly carry out film coating on the back of the wafer, thereby adjusting the stress distribution of the wafer and enabling the wafer to be flat. The wafer stress adjustment method provided by the embodiment of the application is realized by using the vapor deposition equipment.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to vapor deposition equipment and a wafer stress adjustment method.
Background
The wafer stress warpage may be too large due to wafer variation caused by the front side process; when the subsequent processes are carried out, the light is difficult to spread or the performance of the wafer product is influenced. Some of the related art is to coat a film on the back surface of the wafer by means of PECVD (plasma enhanced chemical vapor deposition ) in a direction opposite to the wafer warpage, so that the wafer stress is neutralized, and the wafer tends to be flat, i.e. the warpage meets the requirement. However, as the wafer processing process becomes complicated, the wafer warpage may be different in different directions, and the existing wafer stress neutralization method has poor effect of adjusting the wafer warpage.
Disclosure of Invention
The application aims to provide vapor deposition equipment and a wafer stress adjustment method, which can adjust stress of wafers with different warping conditions so as to enable the wafers to be flattened.
Embodiments of the application may be implemented as follows:
in a first aspect, the present application provides a vapor deposition apparatus for depositing a thin film on a surface of a wafer, the wafer having opposite front and back surfaces, the vapor deposition apparatus comprising:
a deposition chamber in which a holder for supporting a wafer is disposed;
a first gas supply assembly for supplying a process gas to the back surface of the wafer;
the blocking disc assembly comprises a blocking disc and a rotary driving piece, wherein the blocking disc is rotatably arranged in an air flow path formed by the first air supply assembly, the blocking disc is provided with a blocking area and an avoidance area, the blocking area and the avoidance area are distributed in the circumferential direction around the rotation axis, process air can reach the back surface of the wafer through the avoidance area, and the rotary driving piece is used for driving the blocking disc to rotate around the rotation axis so as to adjust the deposition area on the back surface of the wafer.
In an alternative embodiment, the bottom of the deposition chamber is provided with an opening, the air flow of the first air supply assembly enters the deposition chamber from the opening, the blocking disc assembly further comprises a transmission member which connects the rotary driving member with the blocking disc in a transmission manner, and the rotary driving member is located outside the deposition chamber.
In an alternative embodiment, the first gas supply assembly includes a gas flow member disposed in a gas flow path formed by the first gas supply assembly, the gas flow member being provided with uniformly distributed ventilation holes for allowing the process gas to pass upward, and the wafer placement position on the support being located above the gas flow member.
In an alternative embodiment, the baffle plate is disposed between the gas flow member and the wafer placement location on the support.
In an alternative embodiment, the blocking disk is disposed on a side of the gas flow member facing away from the wafer placement location.
In an alternative embodiment, the air flow member forms an air homogenizing chamber, the air vent is communicated with the air homogenizing chamber, the first air supply assembly further comprises an air pipe, a first end of the air pipe is connected to the air flow member and communicated with the air homogenizing chamber, and the other end of the air pipe extends out of the deposition chamber through an opening of the deposition chamber, and the air pipe is used for circulating process air.
In an alternative embodiment, the blocker plate assembly further includes a lift drive for driving the blocker plate toward or away from the wafer.
In an alternative embodiment, a second gas supply assembly is further included for providing a shielding gas to the front side of the wafer.
In an alternative embodiment, the blocking disc is disc-shaped and is eccentrically provided with at least one relief window, and the relief window forms a relief area.
In a second aspect, the present application provides a wafer stress adjustment method for depositing a thin film on a back surface of a wafer using the vapor deposition apparatus according to any one of the foregoing embodiments, the wafer stress adjustment method comprising:
controlling the first gas supply assembly to deliver process gas to the back surface of the wafer;
according to the warping condition of the wafer, the rotary driving piece is controlled to drive the blocking disc to rotate so as to adjust the deposition area on the back surface of the wafer, and a film is formed in the deposition area so that the wafer tends to be flat.
The beneficial effects of the embodiment of the application include, for example:
the vapor deposition apparatus of the embodiment of the application comprises a deposition chamber, a first gas supply assembly and a barrier disk assembly. The first air supply assembly is used for providing process gas to the back of the wafer, the blocking disc assembly comprises a blocking disc and a rotary driving piece, the blocking disc is rotatably arranged in an air flow path formed by the first air supply assembly, the blocking disc is provided with a blocking area and an avoidance area in the circumferential direction around the rotation axis, the process gas can reach the back of the wafer through the avoidance area, the rotary driving piece is used for driving the blocking disc to rotate around the rotation axis so as to adjust the positions of the avoidance area and the blocking area in the circumferential direction, and therefore the deposition area of the back of the wafer is adjusted. By rotating the blocking disk, the process gas can reach a specific deposition area on the back surface of the wafer in a targeted manner, and a film is formed by deposition to provide reverse stress, so that the warped wafer tends to be flat; for the position where the film is not required to be deposited, the blocking area of the blocking disc can block the process gas, so that the process gas is prevented from forming the film at the position. Therefore, the equipment can more flexibly carry out film coating on the back of the wafer, thereby adjusting the stress distribution of the wafer and enabling the wafer to be flat.
The wafer stress adjustment method provided by the embodiment of the application is realized by using the vapor deposition equipment, and can be used for adjusting the stress of the wafer with complex warping condition, so that the wafer tends to be flat, and the subsequent processing is facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a vapor deposition apparatus (with a wafer disposed thereon) according to one embodiment of the present application;
FIG. 2 is a schematic view of a blocker plate in an embodiment of the present application;
FIG. 3 is a schematic view of a blocker plate in another embodiment of the present application;
FIG. 4 is a schematic view of a vapor deposition apparatus according to another embodiment of the present application.
Icon: 100-deposition chamber; 110-a bracket; 200-a first air supply assembly; 210-gas flow member; 211-vent holes; 212-homogenizing the air cavity; 220-a vent pipe; 300-a blocker plate assembly; 310-a blocking disk; 311-blocking region; 312-avoidance region; 320-rotating a driving member; 330-a transmission member; 400-a second air supply assembly; 500-wafer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present application and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
The existing front side processing of the wafer (such as manufacturing a microcircuit structure, coating, etc.) may cause the stress of the wafer to change, so that the wafer may warp. By coating the back of the wafer with a film to apply a stress opposite to the warp direction, the warp of the wafer can be improved to be flattened. For example, the center of the front surface of the wafer is concave, and the edge of the front surface of the wafer is warped towards one side of the front surface, so that the wafer warpage can be improved by plating a film with positive stress on the back surface of the wafer; the center of the front surface of the wafer is convex, and the edge of the front surface of the wafer warps to the back surface side, so that the wafer warpage can be improved by plating a negative-stress film on the back surface of the wafer. However, with the complexity of the front side processing, there may be uneven distribution of front side stress of the wafer in the circumferential direction, resulting in a complicated warpage situation. For example, the wafer may be saddle-shaped in that both ends in the x-direction warp like the front side and both ends in the y-direction warp toward the back side. In this case, plating a film of a certain stress type on the back surface of the wafer cannot significantly improve the wafer warpage.
Therefore, the embodiment of the application provides the vapor deposition equipment and the wafer stress adjustment method, and the film can be deposited at a specific position on the back of the wafer in a targeted manner through the vapor deposition equipment, so that the wafer warpage is improved.
FIG. 1 is a schematic view of a vapor deposition apparatus (with a wafer 500 disposed thereon) according to an embodiment of the present application; fig. 2 is a schematic view of a blocker plate 310 in an embodiment of the application. As shown in fig. 1 and 2, in the present embodiment, the vapor deposition apparatus includes a deposition chamber 100, a first gas supply assembly 200, and a barrier disk assembly 300. The deposition chamber 100 is used for vapor deposition to form a thin film on the surface of the wafer 500. A support 110 for supporting the wafer 500 is provided in the deposition chamber 100. The wafer 500 has opposite front and back surfaces, both of which are exposed for the process gases to form a film thereon when the wafer 500 is placed on the carrier 110. In fig. 1, the upper surface of the wafer 500 is a front surface, the lower surface is a back surface, and the support 110 is supported at an edge position of the wafer 500.
In an embodiment of the present application, the first gas supply assembly 200 is used to supply a process gas to the backside of the wafer 500. The process gas is the raw material for forming the film. Specifically, the first air supply assembly 200 includes an air flow member 210, and the air flow member 210 is disposed in an air flow path formed by the first air supply assembly 200. The gas flow member 210 is provided with uniformly distributed ventilation holes 211, and the ventilation holes 211 are used for allowing the process gas to pass upwards. The wafer 500 placed on the support 110 is positioned above the gas flow member 210. The gas flow member 210 can make the process gas passing therethrough more uniform.
In this embodiment, the air flow member 210 has an air homogenizing chamber 212 formed therein, and the air holes 211 are communicated with the air homogenizing chamber 212, so that the process air flows into the air homogenizing chamber 212 and then flows out through the air holes 211, thereby realizing air flow homogenization. The first gas supply assembly 200 further includes a vent pipe 220, an opening is disposed at the bottom of the deposition chamber 100, a first end of the vent pipe 220 is connected to the gas flow member 210 and is communicated with the gas homogenizing chamber 212, and the other end of the vent pipe extends out of the deposition chamber 100 through the opening of the deposition chamber 100, and the vent pipe 220 is used for circulating process gas.
By the first gas supply assembly 200 of the present embodiment, the process gas can be introduced from the outside of the deposition chamber 100 and reach the rear surface of the wafer 500. The process gas reaches the plenum 212 of the flow member 210 through the vent tube 220 and then flows to the backside of the wafer 500 through the vent holes 211.
In this embodiment, the gas flow member 210 may have a disk shape, and the wafer 500 is parallel and coaxial with the gas flow member 210 after being placed on the support 110. The dimensions of the gas flow member 210 may be adaptively selected according to the size of the wafer 500 to be processed.
It should be appreciated that the first gas supply assembly 200 may also include other components such as a powered gas pump and a gas tank that stores process gas.
In the embodiment of the present application, the baffle plate assembly 300 includes a baffle plate 310 and a rotation driving member 320, the baffle plate 310 is rotatably disposed in a gas flow path formed by the first gas supply assembly 200, the baffle plate 310 has a baffle region 311 and a dodging region 312 in a circumferential direction around a rotation axis, the process gas can reach the back surface of the wafer 500 through the dodging region 312, and the rotation driving member 320 is used for driving the baffle plate 310 to rotate around the rotation axis to adjust a deposition region of the back surface of the wafer 500.
In this embodiment, the blocker plate assembly 300 further includes a transmission member 330, the transmission member 330 drivingly connects the rotary drive member 320 and the blocker plate 310, the rotary drive member 320 being located outside the deposition chamber 100. By disposing the rotary driving member 320 outside the deposition chamber 100, the rotary driving member 320 is prevented from being adversely affected by the process gas or the vapor deposition environment, and thus, the normal and stable operation thereof can be ensured.
Alternatively, the rotation driving member 320 is a stepping motor capable of precisely controlling an angle at which it drives the blocking plate 310 to rotate, thereby precisely adjusting the posture of the blocking plate 310.
In the present embodiment, the baffle plate 310 is disposed between the gas flow member 210 and the wafer 500 placement position on the support frame 110. The uniform air flow output from the air flow member 210 is blocked by the blocking plate 310 at the blocking plate 310, thereby forming a non-uniform air flow. The gas flow is blocked in the blocking region 311 of the blocker plate 310 and can only pass through the blocker plate 310 from the evasion region 312 to the backside of the wafer 500. By providing the barrier disk 310, only the region corresponding to the avoiding region 312 of the barrier disk 310 is deposited on the back surface of the wafer 500 to form a thin film, while the region corresponding to the barrier region 311 of the barrier disk 310 is difficult to form a thin film (even if it can be formed, only a thin film can be formed by gas diffusion). Therefore, by rotating the barrier disk 310, a specific deposition region on the back surface of the wafer 500 can be subjected to vapor deposition in a targeted manner.
It will be appreciated that the blocking region 311 and the avoidance region 312 are arranged in a circumferential direction about the axis of rotation, such that the positions of the blocking region 311 and the avoidance region 312 can be adjusted by rotating the blocking disk 310.
Optionally, the blocking disc 310 is disc-shaped, and at least one relief window is eccentrically opened, and the relief window forms a relief area 312. In the embodiment shown in fig. 2, the blocker plate 310 is provided with two relief windows, thereby forming two relief areas 312. In the view of fig. 2, the two keep-away regions 312 are spaced apart in the y-direction, so that the process gas, when passing over the blocker plate 310, may form two gas flows spaced apart in the y-direction to vapor deposit two spaced apart regions on the backside of the wafer 500; the barrier disk 310 has a better barrier effect to the process gas at both ends in the x-direction, so that a thin film (or thin film) is not deposited at the corresponding position on the back surface of the wafer 500. By rotating the blocker plate 310, the deposition area of the backside of the wafer 500 may be adjusted.
It should be appreciated that the configuration of the blocker plate 310 may be adjusted as desired so long as deposition at a particular location on the backside of the wafer 500 can be achieved by selectively blocking or passing a portion of the gas flow through the rotation. On the basis of the embodiment of fig. 2, only one avoidance window may be provided eccentrically. Fig. 3 is a schematic view of a blocker plate 310 in another embodiment of the application. As shown in fig. 3, the blocking disk 310 in this embodiment includes two fan-shaped portions, forming two blocking areas 311 spaced apart in the y-direction, and the other areas in the circumferential direction are avoiding areas 312, so that the corresponding positions of the air flow passing through the blocking disk 310 can be selectively adjusted by rotation as well. In other embodiments, only one sector portion may be provided as the blocking area 311.
In alternative embodiments, to avoid excessive obstruction of the gas flow by the blocking portion, which may cause turbulence of the gas flow in the deposition chamber 100, through holes may be formed in the blocking portion to mitigate the obstruction of the gas flow.
In this embodiment, the vapor deposition apparatus further includes a second gas supply assembly 400, and the second gas supply assembly 400 is configured to supply a protective gas to the front surface of the wafer 500. By providing the second gas supply assembly 400, it is possible to blow a protective gas (such as nitrogen) to the front surface of the wafer 500 while coating the back surface of the wafer 500, so that the process gas is prevented from diffusing to the front surface of the wafer 500, resulting in deposition of a thin film on the front surface of the wafer 500.
In the present embodiment, the second gas supply assembly 400 is disposed right above the support frame 110, and introduces a shielding gas from the outside of the deposition chamber 100 through a pipe, and the gas outlet direction of the second gas supply assembly 400 is downward.
FIG. 4 is a schematic view of a vapor deposition apparatus according to another embodiment of the present application. As shown in fig. 4, in the present embodiment, the blocking disk 310 is disposed on a side of the gas flow member 210 facing away from the position where the wafer 500 is placed. Unlike the embodiment of fig. 1, the gas flow member 210 of the embodiment of fig. 4 is not provided with the uniform gas chamber 212, and the blocking plate 310 is disposed below the gas flow member 210, and the process gas delivered from the bottom to the top passes through the blocking plate 310 and then passes through the gas vent 211 of the gas flow member 210. This allows the airflow passing through the baffle plate 310 to be homogenized to some extent by the airflow member 210, so that the airflow is prevented from being excessively concentrated. It should be appreciated that even though the gas flow through the gas flow member 210, the gas flow distribution ultimately reaching the wafer 500 exhibits a significant zone difference: i.e., the flow rate corresponding to the relief area 312 of the blocker plate 310 is significantly greater than the other areas.
Further, in alternative embodiments, the blocker plate assembly 300 may further include a lift drive (not shown) for driving the blocker plate 310 closer to or further from the wafer 500. It will be appreciated that the closer the barrier disk 310 is to the wafer 500, the more pronounced the difference in film deposition from the deposition and non-deposition areas on the backside of the wafer 500. When the baffle plate 310 is far from the wafer 500, the process gas will diffuse to some extent after passing through the avoiding area 312, so that a certain amount of deposition will be generated on the surface of the wafer 500 corresponding to the baffle area 311; when the baffle plate 310 is closer to the wafer 500, the diffusion degree of the process gas after passing through the avoiding region 312 is weaker, and the deposition amount on the surface of the wafer 500 corresponding to the baffle region 311 is further reduced.
The embodiment of the application also provides a wafer stress adjustment method, which uses the vapor deposition equipment of the previous embodiment to deposit a film on the back surface of the wafer 500. The wafer stress adjustment method comprises the following steps:
step S100, controlling the first gas supply assembly 200 to supply process gas to the back surface of the wafer 500;
in step S200, according to the warpage of the wafer 500, the rotation driving member 320 is controlled to drive the blocking plate 310 to rotate so as to adjust the deposition area on the back surface of the wafer 500, and a thin film is formed on the deposition area so as to make the wafer 500 become flat.
It will be appreciated that when a particular area of the back surface of the wafer 500 requires deposition of a film to balance the stress and thereby eliminate warpage, the blocker plate 310 is driven to rotate so that the relief area 312 is directly opposite the area of the back surface of the wafer 500 where the film is to be deposited and then held. Stopping depositing the film or depositing at another position after the film deposition thickness meets the requirement. If uniform deposition is desired on the entire backside of the wafer 500, the blocker plate 310 may be maintained at a constant rotation during the deposition process.
Specifically, the deposited film in this embodiment may be a silicon nitride film with a stress range of-1 gpa to 1gpa, and the deposition process may be ion-enhanced chemical vapor deposition (PECVD).
The first gas supply assembly 200 may supply the process gas, and the second gas supply assembly 400 may also be controlled to supply a protective gas, such as nitrogen, to the front surface of the wafer 500 as needed, so as to prevent the process gas from forming a thin film on the front surface of the wafer 500.
In summary, the vapor deposition apparatus according to the embodiment of the present application includes the deposition chamber 100, the first gas supply assembly 200, and the barrier disc assembly 300. The first gas supply assembly 200 is configured to supply a process gas to the rear surface of the wafer 500, the blocker plate assembly 300 includes a blocker plate 310 and a rotary driver 320, the blocker plate 310 is rotatably disposed in a gas flow path formed by the first gas supply assembly 200, the blocker plate 310 has a blocker region 311 and an dodging region 312 in a circumferential direction around a rotation axis, the process gas can reach the rear surface of the wafer 500 through the dodging region 312, and the rotary driver 320 is configured to drive the blocker plate 310 to rotate around the rotation axis to adjust positions of the dodging region 312 and the blocker region 311 in the circumferential direction, thereby adjusting a deposition region of the rear surface of the wafer 500. By rotating the baffle plate 310, the process gas can be targeted to specific deposition areas on the back side of the wafer 500, depositing a thin film to provide a counter stress that tends to planarize the warped wafer 500; while for locations where deposition of a film is not desired, the blocking region 311 of the blocker plate 310 blocks the process gas from forming a film at that location. Therefore, the device can more flexibly coat the back surface of the wafer 500, thereby adjusting the stress distribution of the wafer 500 and enabling the wafer to be flat.
The wafer 500 stress adjustment method provided by the embodiment of the application is realized by using the vapor deposition equipment, and can be used for adjusting the stress of the wafer 500 with complex warping conditions, so that the wafer is flat and is beneficial to subsequent processing.
The present application is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (10)
1. A vapor deposition apparatus for depositing a thin film on a surface of a wafer (500), the wafer (500) having opposite front and back surfaces, the apparatus comprising:
a deposition chamber (100), wherein a bracket (110) for supporting a wafer (500) is arranged in the deposition chamber (100);
a first gas supply assembly (200) for supplying a process gas to the back surface of the wafer (500);
the blocking disc assembly (300) comprises a blocking disc (310) and a rotary driving piece (320), wherein the blocking disc (310) is rotatably arranged in an airflow path formed by the first air supply assembly (200), the blocking disc (310) is provided with a blocking area (311) and an avoidance area (312), the blocking area (311) and the avoidance area (312) are distributed in the circumferential direction around a rotation axis, process air can reach the back surface of a wafer (500) through the avoidance area (312), and the rotary driving piece (320) is used for driving the blocking disc (310) to rotate around the rotation axis so as to adjust a deposition area of the back surface of the wafer (500).
2. The vapor deposition apparatus according to claim 1, wherein the bottom of the deposition chamber (100) is provided with an opening, from which the gas flow of the first gas supply assembly (200) enters the deposition chamber (100), the barrier disc assembly (300) further comprising a transmission member (330), the transmission member (330) drivingly connecting the rotation driving member (320) and the barrier disc (310), the rotation driving member (320) being located outside the deposition chamber (100).
3. The vapor deposition apparatus according to claim 2, wherein the first gas supply assembly (200) comprises a gas flow member (210), the gas flow member (210) is disposed in a gas flow path formed by the first gas supply assembly (200), uniformly distributed vent holes (211) are disposed on the gas flow member (210), the vent holes (211) are used for allowing the process gas to pass upwards, and a wafer (500) placement position on the support (110) is located above the gas flow member (210).
4. A vapor deposition apparatus according to claim 3, wherein the baffle plate (310) is arranged between the gas flow member (210) and a wafer (500) placing position on the support (110).
5. A vapor deposition apparatus according to claim 3, characterized in that the baffle plate (310) is arranged on the side of the gas flow member (210) facing away from the place where the wafer (500) is placed.
6. A vapor deposition apparatus according to claim 3, wherein the gas flow member (210) forms a gas homogenizing chamber (212), the gas vent (211) is in communication with the gas homogenizing chamber (212), the first gas supply assembly (200) further comprises a gas vent pipe (220), a first end of the gas vent pipe (220) is connected to the gas flow member (210) and in communication with the gas homogenizing chamber (212), and the other end protrudes out of the deposition chamber (100) through the opening of the deposition chamber (100), the gas vent pipe (220) being for the flow of the process gas.
7. The vapor deposition apparatus of claim 1, wherein the blocker plate assembly (300) further comprises a lift drive for driving the blocker plate (310) toward or away from a wafer (500).
8. The vapor deposition apparatus according to claim 1, further comprising a second gas supply assembly (400), the second gas supply assembly (400) being configured to provide a shielding gas to the front surface of the wafer (500).
9. The vapor deposition apparatus according to claim 1, characterized in that the blocking disk (310) is disk-shaped and is eccentrically provided with at least one relief window, which forms the relief region (312).
10. A method of stress adjustment of a wafer (500), characterized in that a thin film is deposited on the back side of the wafer (500) using the vapor deposition apparatus according to any one of claims 1 to 9, the method of stress adjustment of the wafer (500) comprising:
controlling the first gas supply assembly (200) to deliver process gas to the back side of the wafer (500);
according to the warping condition of the wafer (500), the rotary driving piece (320) is controlled to drive the blocking disc (310) to rotate so as to adjust a deposition area on the back surface of the wafer (500), and a film is formed in the deposition area so as to enable the wafer (500) to be flattened.
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