TW201339353A - MOCVD (metal organic chemical vapor deposition) method and apparatus thereof - Google Patents

Abstract

The present invention relates to a kind of MOCVD(Metal Organic Chemical Vapor Deposition) method and its apparatus. The method includes the following steps: providing a base and at least one base chip; and providing a first air-inlet apparatus and a second air-inlet apparatus. An angle is formed by a first air-outlet direction along which a first gas ejects and a second air-outlet direction along which a second gas ejects. The first gas and the second gas deposite on an upper surface of the base chip so as to form a layer of metal organic compound. The first gas includes an A area having average concentrations higher than that of a B area. The second gas includes an C area having average concentrations higher than that of a D area. The A area and the C area are intervally arranged with each other. The base chip passes through the A area and the C area in turn. The present invention not only can avoid pre-reaction of reactive gases, but also can improve reaction rate. As a result, fabrication cost thereof can be greatly saved.

Description

Metal organic compound chemical vapor deposition method and device thereof

The invention relates to the technical field of chemical vapor deposition, in particular to a metal organic compound chemical vapor deposition method and a device thereof.

Chemical vapor deposition (CVD) is a chemical reaction of a reactive substance under gaseous conditions to form a solid material deposited on the surface of a heated solid substrate to produce a solid material by chemical vapor deposition. The device was reached. Specifically, the CVD apparatus passes the reaction gas into the reaction chamber by the intake device, and controls the reaction conditions such as the gas pressure and the temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process step. In order to deposit the desired film, it is generally required to introduce a plurality of different reaction gases into the reaction chamber, and it is also necessary to introduce a carrier gas or a purge gas or other non-reactive gas into the reaction chamber, so that it is required to be disposed in the CVD apparatus. Multiple air intakes.

Metal Organic Chemical Vapor Deposition (MOCVD) device is mainly used for thin layer of III-V group, II-VI compound and alloy of gallium nitride, gallium arsenide, indium phosphide and zinc oxide. The preparation of crystalline functional structural materials has become one of the important devices of chemical vapor deposition devices as the application range of the above functional structural materials has been expanded. MOCVD generally uses a Group II or Group III metal organic source and a Group VI or Group V hydride source as a reaction gas, and uses hydrogen or nitrogen as a carrier gas to carry out vapor phase epitaxial growth on a substrate by thermal decomposition reaction, thereby growing various kinds. II-VI compound Thin layer single crystal materials of semiconductors, III-V compound semiconductors, and their multiple solid solutions. Since the transmission conditions of the Group II or Group III metal organic source and the Group VI or Group V hydride source are different, it is necessary to separately separate the Group II or Group III metal organic source and the Group VI or Group V hydride by different air intake means. The source is transferred over the substrate.

The MOCVD apparatus in the prior art generally includes: a reaction chamber; a shower assembly located at the top of the reaction chamber, the spray assembly includes two air intake devices, and the two air intake devices respectively have a Group II or Group III metal organic A source and a Group VI or Group V hydride source are transported over the substrate; a susceptor disposed opposite the shower assembly, the susceptor having a heating unit for supporting and heating the substrate.

The shower assembly is divided into a vertical type and a horizontal type according to the flow direction of the supplied reaction gas relative to the flow direction of the substrate. The horizontal spray assembly disclosed in Chinese Patent No. ZL200580011014, which causes the flow of the reaction gas to flow in a horizontal direction parallel to the substrate. The vertical spray assembly disclosed in the Republic of China Patent No. TW201030179A1 allows the flow of the reaction gas along the air. Flows perpendicular to the vertical direction of the substrate.

However, the horizontal spray assembly has a loss of reactant concentration along the path, thermal convection vortex and side wall effect, which tends to cause uneven thickness and concentration of the substrate in the lateral and longitudinal directions; the exhaust gas after the reaction of the vertical spray module cannot be timely The discharge is so that the concentration in the radial direction is uneven, causing fluctuations in the thickness and concentration of the substrate in the radial direction.

See U.S. Pat. Referring to the first figure, the apparatus has: a processing chamber 2 disposed in a reactor 1, the processing chamber 2 having a substrate holder 4 for at least one substrate 5; for heating the substrate holder 4 to a process a temperature heating device 13; a gas inlet member 3 disposed opposite the substrate holder 4 for introducing a first reactive gas (eg, a Group III metal organic source) into the processing chamber 2, the gas inlet member 3 having a plurality of first openings 6 for discharging the first reaction gas, the first openings 6 being disposed on the surface of the gas inlet member 3 disposed opposite the substrate holder 4; the pretreatment device 9 is for pre-processing Processing a device of a second reactive gas (e.g., a Group V hydride source) to be introduced into the processing chamber 2, the pretreatment device 9 being disposed at an edge of the substrate holder 4 in such a manner that the The second reactive gas is parallel to the substrate holder surface 20 above the substrate holder 4 and flows laterally with respect to the direction 11 in which the first reactive gas flows.

In the above technique, the Group III metal organic source flows in a vertical direction of the vertical substrate, the Group V hydride source flows in a horizontal direction parallel to the substrate, and the Group III metal organic source is on the entire horizontal surface corresponding to the upper surface of the substrate. There is a distribution, and the Group V hydride source is also distributed over the entire horizontal surface corresponding to the upper surface of the substrate, so that a continuous diffusion boundary layer can be formed on the substrate.

However, before the two reactive gases reach the epitaxial growth surface of the substrate, the Group III metal organic source must pass through the entire V-group hydride source, and due to the V-group hydride source. Is an excess of reactants, so the Group V hydride source molecules will prevent a large number of Group III metal organic sources and carrier gases from reaching the surface of the substrate, resulting in the early reaction of the two gases, ultimately reducing the efficiency of the use of Group III metal organic sources, Causes waste of materials. The price of metal organic source materials is very expensive, which inevitably leads to an increase in production costs. At the same time, the deposition rate of the film is also reduced.

Therefore, in the chemical vapor deposition process of the metal organic compound, how to avoid the early reaction of the two reaction gases and increase the reaction rate has become an urgent problem to be solved by those skilled in the art.

The object of the present invention is to provide a metal organic compound chemical vapor deposition method and a device thereof, which can prevent the reaction gas from reacting in advance, increase the reaction rate, and reduce the production cost.

In order to solve the above problems, the present invention provides a metal organic compound chemical vapor deposition method, comprising: providing a pedestal and at least one substrate, the pedestal having an upper surface, the substrate being disposed on the pedestal a first intake device having a plurality of first air outlets for transmitting a first gas and a second air intake device having a plurality of second air outlets for transporting a second gas, the first gas along The direction in which the first air outlet is ejected is at an angle with the direction in which the second gas is ejected along the second air outlet, and the angle of the angle is 60 degrees to 120 degrees; the first gas and the first gas The second gas forms a reaction above the substrate a region, and depositing a layer of a metal organic compound on the upper surface of the substrate; a concentration gradient distribution of the first gas in the reaction region, including an A region and a B region, the average concentration of the first gas in the A region being higher than a first gas average concentration of the B region; a concentration gradient distribution of the second gas in the reaction region, including a C region and a D region, wherein the C region has a second gas average concentration higher than the D region a second gas average concentration; the A region is spaced apart from the C region, and the substrate passes through the A region and the C region in sequence.

Optionally, an angle formed by the direction in which the first gas is ejected along the first air outlet and the direction in which the second gas is ejected along the second air outlet is 90 degrees.

Optionally, the A area corresponds to the D area; the B area corresponds to the C area.

Optionally, the number of the A area, the B area, the C area, and the D area ranges from 4 to 50.

Optionally, the base is provided with a mandrel, the base rotates around the mandrel, the base is circular, and a plurality of substrates are distributed around the mandrel on the base.

Optionally, the A region, the B region of the first gas, or the C region and the D region of the second gas are radially distributed around the mandrel.

Optionally, the base comprises at least one substrate carrier, the substrate being disposed on the substrate carrier.

Optionally, the substrate carrier rotates about its geometric center.

Optionally, the first gas comprises a Group III metal organic source and the second gas comprises a Group V hydride source.

Optionally, the first gas comprises a Group V hydride source and the second gas comprises a Group III metal organic source.

Optionally, the group III metal organic source comprises one or more of Ga(CH3)3, In(CH3)3, Al(CH3)3, Ga(C2H5)3, Zn(C2H5)3 gas; The Group V hydride source includes one or more of NH3, PH3, and AsH3 gases.

Optionally, the concentration of the first gas decreases as the distance from the first air outlet increases.

Optionally, the concentration of the second gas decreases as the distance from the second air outlet increases.

In order to solve the above problems, the present invention also provides a metal organic compound chemical vapor deposition apparatus, comprising: a reaction chamber; a susceptor disposed in the reaction chamber, the susceptor having an upper surface, at least one substrate being disposed on a top surface of the base; a rotary drive unit coupled to the base for rotating the base; one or more first air intake devices, each of the first air intake devices comprising a plurality a first air outlet for transmitting a first gas; one or more second air intake devices, each of the second air intake devices including a plurality a second air outlet for transmitting the second gas; the direction in which the first gas is ejected along the first air outlet is at an angle to the direction in which the second gas is ejected along the second air outlet. The angle value of the angle is 60 degrees to 120 degrees; the first gas and the second gas form a reaction region above the substrate, and a metal organic compound is deposited on the upper surface of the substrate; a concentration gradient distribution of a gas in the reaction zone, comprising an A region and a B region, the first gas average concentration of the A region being higher than the first gas average concentration of the B region; the second gas being a concentration gradient distribution in the reaction region, including a C region and a D region, wherein the second gas average concentration of the C region is higher than the second gas average concentration of the D region; the A region is spaced apart from the C region, The substrate passes through the A region and the C region in sequence.

Optionally, an angle formed by the direction in which the first gas is ejected along the first air outlet and the direction in which the second gas is ejected along the second air outlet is 90 degrees.

Optionally, the A area corresponds to the D area; the B area corresponds to the C area.

Optionally, the number of the A area, the B area, the C area, and the D area ranges from 4 to 50.

Optionally, a center of the base is provided with a mandrel, the base rotates around the mandrel, the base is circular, and a plurality of substrates are distributed around the mandrel at the base On the seat.

Optionally, the A region, the B region of the first gas, or the C region and the D region of the second gas are radially distributed around the mandrel.

Optionally, the base comprises at least one substrate carrier, the substrate being disposed on the substrate carrier.

Optionally, the substrate carrier rotates about its geometric center.

Optionally, the first gas comprises a Group III metal organic source and the second gas comprises a Group V hydride source.

Optionally, the first gas comprises a Group V hydride source and the second gas comprises a Group III metal organic source.

Optionally, the group III metal organic source comprises one or more of Ga(CH3)3, In(CH3)3, Al(CH3)3, Ga(C2H5)3, Zn(C2H5)3 gas; The Group V hydride source includes one or more of NH3, PH3, and AsH3 gases.

Optionally, the concentration of the first gas decreases as the distance from the first air outlet increases.

Optionally, the concentration of the second gas decreases as the distance from the second air outlet increases.

Optionally, the base has a heating unit for heat treatment of the substrate.

Optionally, the first air intake device or the second air intake device is fixed on top of the reaction chamber.

Optionally, the metal organic compound chemical vapor deposition apparatus further includes: A cooling device is disposed at the top of the reaction chamber for reducing the temperature of the first gas or the second gas.

Optionally, the first air intake device includes a first air intake pipe and a first air guide disk, and a plurality of first air outlets are disposed on a horizontal surface of the first air guide disk, and the first gas is sequentially The first intake pipe, the first air guide disk, and the first air outlet port flow out in a direction perpendicular to the upper surface of the substrate.

Optionally, the second air intake device includes a second air intake pipe and a second air guide disk, and a plurality of second air outlets are disposed on a vertical surface of the second air guide disk, and the second gas is sequentially The second intake pipe, the second air guide disk, and the second air outlet are flowed out in a direction parallel to the upper surface of the substrate.

Optionally, the second air intake device is disposed in an intermediate region of the reaction chamber, and the second gas flows to an edge region of the reaction chamber.

Optionally, the second air intake device is disposed in a peripheral region of the reaction chamber, and the second gas flows to an intermediate region of the reaction chamber.

Optionally, the horizontal section of the second air guide disk is circular.

Optionally, the horizontal cross section of the second air guide disk is a polygon.

Compared with the prior art, the present invention has the following enhancements:

1) In the present invention, the direction in which the first gas is ejected is at an angle of 60 to 120 degrees from the direction in which the second gas is ejected, and the concentrations of the first gas and the second gas in the reaction region are uniformly distributed, and the first gas corresponds to A. The average gas concentration in the region is higher than the average gas concentration in the B region, and the average gas concentration in the C region corresponding to the second gas is higher than the average gas concentration in the D region, and the substrates are sequentially arranged by spacing. Area A and Area C. Since the high distribution area of the first gas (ie, the A area) and the high distribution area of the second gas (ie, the C area) are spaced apart, at least a majority of the first gas can directly reach the substrate without passing through the second gas. The upper surface, that is, at least a majority of the first gas and most of the second gas can respectively reach the upper surface of the substrate, thereby largely avoiding the advance reaction of the first gas and the second gas before reaching the upper surface of the substrate, and improving the two reactive gases The efficiency of use, correspondingly increased the reaction rate, that is, the deposition rate of metal organic compounds, increased productivity, and reduced production costs.

2) Further, the first gas comprises a group III metal organic source, and the second gas comprises a group V hydride source, since the price of the group III metal organic source is much higher than the price of the group V hydride source, thereby The vertical flow of the Group III metal organic source to the upper surface of the substrate can substantially avoid material waste of the Group III metal organic source, thereby further reducing the production cost.

3) Further, since the V-group hydride source (ie, the second gas) is an excess reactant, the uniformity of the reaction rate is determined only by the distribution of the first gas on the substrate, so by adjusting the flow rate of the first gas, The reaction rate of the first gas and the second gas is controlled, so that the uniformity of the reaction rate can be easily adjusted by the present invention.

4) Further, the center of the base is provided with a mandrel, and the base rotates around the base, and the first gas and the second gas can be made uniform by controlling the rotation speed of the base, the area ratio of the A area and the C area, and the like. The reaction is carried out on the upper surface of the substrate, and finally a uniform metal organic compound is deposited on the upper surface of the substrate.

The above described objects, features and advantages of the present invention will become more apparent from the aspects of the appended claims.

In the following description, numerous specific details are set forth in order to provide a full understanding of the invention, but the invention may be practiced otherwise than as specifically described herein.

As described in the prior art, although conventional techniques provide vertical, horizontal, and hybrid (ie, providing a Group III metal organic source in a vertical direction, providing a Group V hydride source in a horizontal direction) MOCVD technology, at a level In the mixed MOCVD technology, the Group III metal organic source is distributed over the entire horizontal surface corresponding to the upper surface of the substrate, and the Group V hydride source is also distributed over the entire horizontal surface corresponding to the upper surface of the substrate, and two gases are reached. There is an overlap state on the upper surface of the substrate, and inevitably, an early reaction occurs, thereby limiting the growth rate of the film, wasting the group III metal organic source, and increasing the production cost; in the vertical MOCVD technology, the group III metal organic source and The Group V hydride source will rapidly mix at the gas inlet, resulting in more gas phase reaction, lowering the reaction rate, and reducing the use efficiency of the Group III metal organic source and increasing the production cost.

In view of the above drawbacks, the present invention provides a metal organic compound chemical vapor deposition method and apparatus thereof, wherein the direction in which the first gas is ejected is at an angle of 60 to 120 degrees with respect to the direction in which the second gas is ejected, and the first in the reaction region The concentration gradient distribution of the gas and the second gas, the average gas concentration of the A region corresponding to the first gas is higher than the average gas concentration of the B region, and the gas of the C region corresponding to the second gas The average body concentration is higher than the average concentration of the gas in the D region, and the substrate sequentially passes through the A region and the C region which are arranged in intervals. Since the high distribution area of the first gas (ie, the A area) and the high distribution area of the second gas (ie, the C area) are spaced apart, at least a majority of the first gas can directly reach the upper surface of the substrate without passing through the second gas. That is, at least a majority of the first gas and most of the second gas can reach the upper surface of the substrate, thereby greatly reducing the reaction of the first gas and the second gas before reaching the upper surface of the substrate, thereby improving the use efficiency of the two reaction gases, correspondingly The reaction rate, that is, the deposition rate of the metal organic compound, is also increased, the productivity is increased, and the production cost is lowered.

The details will be described below with reference to the accompanying drawings.

Referring to the second and third figures, the present embodiment provides a metal organic compound chemical vapor deposition method, the method comprising the following steps: Step S1, providing a susceptor 100 and at least one substrate (third diagram) Not shown), the susceptor 100 has an upper surface, the substrate is disposed on the upper surface of the pedestal; and in step S2, a first intake air having a plurality of first air outlets for transmitting the first gas is provided a device 500 and a second air intake device 600 having a plurality of second air outlets for transmitting a second gas, the direction in which the first gas is ejected along the first air outlet and the second gas along the The direction in which the second air outlet is ejected is at an angle, the angle of the angle is 60 degrees to 120 degrees; in step S3, the first gas and the second gas form a reaction area above the substrate, and Deposition of the upper surface of the substrate to obtain a layer of metal organication Compound.

Referring to the fourth figure, the concentration distribution of the first gas in the reaction region includes an A region and a B region, and the first gas average concentration of the A region is higher than the first gas average of the B region. concentration.

Referring to the fifth figure, the concentration gradient distribution of the second gas in the reaction region includes a C region and a D region, and the second gas of the C region has a higher average concentration than the second gas of the D region. Average concentration.

Referring again to the third figure, the A area is spaced apart from the C area, and the substrate passes through the A area and the C area in sequence.

In this embodiment, since the A region of the first gas and the C region of the second gas are spaced apart, at least a majority of the first gas may directly reach the upper surface of the substrate without passing through the second gas, that is, at least a majority of the first gas. And most of the second gas can reach the upper surface of the substrate respectively, thereby greatly reducing the advance reaction of the first gas and the second gas before reaching the upper surface of the substrate, improving the use efficiency of the two reaction gases, and correspondingly increasing the reaction. The rate, the rate at which metal organic compounds are deposited, increases throughput and reduces production costs.

The discharge direction of the first gas and the discharge direction of the second gas may be at an angle, such as 60 degrees, 70 degrees, 90 degrees, 100 degrees, or 120 degrees. Preferably, the discharge direction of the first gas and the discharge direction of the second gas are perpendicular or approximately vertical. Specifically, referring to the third figure, in the embodiment, the discharge direction of the first gas is perpendicular to the discharge direction of the second gas, and the discharge direction of the first gas is perpendicular to the upper surface of the susceptor, and the second gas is Squirt direction and said The upper surface of the base is parallel.

Referring to the third, fourth and fifth figures, in the present embodiment, the A area corresponds to the D area, and the B area corresponds to the C area, that is, the height of the first gas. The concentration distribution region corresponds to a low concentration distribution region of the second gas, and the low concentration distribution region of the first gas corresponds to a high concentration distribution region of the second gas. This is because the boundary point between the high concentration distribution region and the low concentration distribution region of the first gas in this embodiment coincides with the boundary point between the low concentration distribution region and the high concentration distribution region of the second gas. In other embodiments of the present invention, the boundary between the boundary of the high concentration distribution region and the low concentration distribution region of the first gas and the boundary between the low concentration distribution region and the high concentration distribution region of the second gas may not coincide, thereby the first gas The high concentration distribution region may also correspond to a portion of the high concentration distribution region of the second gas, or the low concentration distribution region of the first gas may correspond to a portion of the low concentration distribution region of the second gas, which does not limit the protection range of the present invention.

Further, the B region of the first gas may include a zero distribution region, that is, at least a portion of the region corresponding to the C region of the second gas may not include the first gas. Similarly, the D region of the second gas may also include a zero distribution region, that is, at least a portion of the region corresponding to the A region of the first gas may not include the second gas. The larger the proportion of the zero-distribution region in the low-concentration distribution region (ie, the B region or the D region), the smaller the amount of the first gas and the second gas reacted in advance, and the higher the utilization efficiency of the two gases.

Referring to the third figure, the first gas distribution in the high distribution region (ie, the A region) of the first gas may be uneven due to gas diffusion. The first gas distribution in the low distribution region of the first gas (ie, the B region) may be uneven. Similarly, the second gas distribution in the high distribution region of the second gas (ie, the C region) may also be non-uniform, and the second gas distribution in the low distribution region (ie, the D region) of the second gas may also be uneven.

The A area is mainly an area corresponding to the first air outlet, and the C area is mainly an area corresponding to the second air outlet. Due to gas diffusion, the concentration of the first gas decreases as the distance from the first gas outlet increases, that is, the concentration of the first gas in the region closer to the first gas outlet is larger, the distance from the first gas The concentration of the first gas in the region where the distance from the gas outlet is farther is smaller. Similarly, the concentration of the second gas decreases as the distance from the second gas outlet increases.

The number of the A area, the B area, the C area, and the D area in the embodiment may be in the range of 4 to 50, such as 4, 10, 18, 30, or 50. The number or the area of each area may be the same or different, and the specific shape is determined by the distribution shape and the number of the corresponding air outlets, which is not limited by the present invention.

The first gas and the second gas are mainly used for reaction to form a metal organic compound, and the metal organic compound in the embodiment may be a III-V semiconductor compound. At this time, the first gas may include a group III metal organic source, and the second gas includes a group V hydride source; or the first gas may include a group V hydride source, and the second gas may include Group III metal organic source. In addition, the first gas and the second gas may further include a carrier gas or the like.

Preferably, the first gas comprises a Group III metal organic source and the second gas comprises a Group V hydride source. Because the price of Group III metal organic sources is much higher than The price of the V-group hydride source, so that the vertical flow of the group III metal organic source to the upper surface of the substrate can greatly reduce the material waste of the group III metal organic source, thereby further reducing the production cost; in addition, since the group V hydride source is excessively reacted Therefore, it is only necessary to control the flow rate of the Group III metal organic source to control the reaction rate of the two gases simply and effectively.

Specifically, the group III metal organic source may be one or more of Ga(CH3)3, In(CH3)3, Al(CH3)3, Ga(C2H5)3, Zn(C2H5)3 gas; The Group V hydride source may be one or more of NH3, PH3, AsH3 gases; the carrier gas may be one or more of hydrogen, nitrogen or an inert gas.

In the embodiment, the center of the base 100 may be provided with a spindle, and the base 100 may be rotated around the spindle by any rotary driving unit. The sixth figure shows a schematic diagram of the gas distribution when the susceptor 100 is rotated. Referring to the third and sixth figures, when the susceptor 100 rotates, the distribution of the two gases may change slightly due to the rotation of the susceptor 100 (eg, the concentration distribution of the two gases is highest in the sixth figure). The points are all shifted to the right), and the positions of the A area and the C area also change accordingly. However, the distribution trends of the two gases are consistent, so the A region is still spaced from the C region, the A region still corresponds to the D region, and the C region still corresponds to the B region. The average concentration of the first gas in the A region is greater than B. The average concentration of the first gas in the region, the average concentration of the second gas in the C region is greater than the average concentration of the second gas in the D region. The substrate on the susceptor 100 (not shown in the sixth figure) rotates with the susceptor 100. During the rotation of the substrate, the substrate will The A region, the C region, the A region, the C region, ..., that is, the first gas, the second gas, the first gas, the second gas, etc., sequentially pass over the substrate. By controlling the rotational speed of the substrate, the area ratio of the A region and the C region, the uniformity of the metal organic compound film deposited by the reaction of the first gas and the second gas on the upper surface of the substrate can be improved.

At this time, since the second gas is an excess gas, the uniformity of the reaction rate is determined only by the distribution of the first gas on the substrate, so by adjusting the size and density of the first gas outlet (ie, the flow rate of the first gas), The reaction rate of the first gas and the second gas can be controlled, so that the uniformity of the reaction rate can be easily adjusted in this embodiment.

Referring to the seventh figure, in the embodiment, the susceptor 100 may be circular, and a plurality of the substrates 200 are distributed around the mandrel 150 on the susceptor 100. Specifically, the susceptor 100 may include at least one substrate carrier (not shown) disposed on the substrate carrier. The number of substrate carriers is the same as the number of substrates, and the substrate carrier can be rotated about its geometric center.

In the embodiment, a plurality of substrates 200 are carried on the susceptor 100, so that film deposition can be performed on the plurality of substrates 200 at the same time, thereby improving production efficiency.

It should be noted that the susceptor 100 may also have other shapes. The substrate 200 may also be distributed on the susceptor 100 in other manners, which does not limit the scope of protection of the present invention.

Referring to the eighth embodiment, the A region and the B region of the first gas in the present embodiment may be radially distributed around the mandrel 150.

Referring to the ninth figure, in the present embodiment, the C region and the D region of the second gas may be radially distributed around the mandrel 150.

Specifically, the A region and the B region of the first gas are fan-shaped with the mandrel 150 of the susceptor 100 as a vertex, and the C region and the D region of the second gas are also vertices with the mandrel 150 of the susceptor 100. The shape of the fan. The size of the sector corresponding to the A area may be the same as the size of the sector corresponding to the B area, or may be different. The size of the sector corresponding to the A area may be the same as the size of the sector corresponding to the C area, or may be different.

It should be noted that, in other embodiments of the present invention, the entire susceptor 100 may be further divided into a plurality of regions, and in each region, the A region of the first gas and the C region of the second gas are still Distribution is performed according to the arrangement shown in Figure 6.

In order to further accelerate the reaction rate of the first gas and the second gas, the substrate 200 may be further subjected to heat treatment to maintain the temperature of the substrate 200 in a temperature range favorable for the reaction of the two gases, which is familiar to the Those skilled in the art are well known and will not be described here.

Further, in order to better control the temperature of the substrate 200, the substrate 200 may be subjected to a cooling process. Thereby the combined action of heating and cooling is such that the first gas and the second gas react at a suitable temperature.

In this embodiment, the first gas flows vertically to the upper surface of the substrate mainly through a flow convection, and the second gas mainly flows to the upper surface of the substrate through diffusion, and the two gases respectively reach the upper surface of the substrate. Further two The gas reacts on the upper surface of the substrate to form a metal organic compound. Since at least a majority of the first gas directly reaches the upper surface of the substrate without passing through the second gas, the reaction of the first gas and the second gas before reaching the substrate is avoided, and the use efficiency of the two reaction gases is improved. And increase the reaction rate, increase production capacity and reduce production costs.

Accordingly, referring to the tenth figure, the present invention further provides a metal organic compound chemical vapor deposition apparatus, comprising: a reaction chamber 300; a susceptor 100 disposed in the reaction chamber 300, the susceptor 100 having an upper portion a surface, at least one substrate 200 is disposed on an upper surface of the base 100; a rotary driving unit 400 is coupled to the base 100 for rotating the base 100; one or more first air intake devices 500, each first air intake device 500 includes a plurality of first air outlets for transmitting a first gas; one or more second air intake devices 600, each second air intake device 600 including a plurality of second air outlets a port for transmitting a second gas; a direction in which the first gas is ejected along the first air outlet is at an angle to a direction in which the second gas is ejected along the second air outlet, the angle of the angle The value is 60 degrees to 120 degrees; the first gas and the second gas form a reaction region above the substrate 200, and a metal organic compound is deposited on the upper surface of the substrate; a concentration gradient distribution of the first gas in the reaction region, including an A region and a B region, wherein the first gas average concentration gas average concentration of the A region is higher than the first gas average concentration of the B region; a concentration gradient distribution of the second gas in the reaction zone, comprising a C region and a D region, the second gas having a higher average concentration of the second gas than the D region; the A region and the region The C regions are spaced apart, and the substrate 200 sequentially passes through the A region and the C region.

The point below the second air intake device 600 in the tenth figure indicates the direction in which the gas flows out from the inside to the outside.

In this embodiment, the first gas is supplied through the first air intake device 500, and the second gas is supplied through the second air intake device 600. Since the A region of the first gas and the C region of the second gas are spaced apart, at least most of the first A gas can directly reach the upper surface of the substrate without passing through the second gas, that is, at least a majority of the first gas and most of the second gas can reach the upper surface of the substrate, thereby greatly reducing the first gas and the second gas. The premature reaction before reaching the upper surface of the substrate improves the use efficiency of the two reaction gases, correspondingly increases the reaction rate, that is, the deposition rate of the metal organic compound, increases the productivity, and lowers the production cost.

The discharge direction of the first gas and the discharge direction of the second gas may be at an angle, such as 60 degrees, 70 degrees, 90 degrees, 100 degrees or 120 degrees. Preferably, the discharge direction of the first gas and the discharge direction of the second gas Vertical or approximately vertical. Specifically, in the embodiment, the discharge direction of the first gas is perpendicular to the discharge direction of the second gas, the discharge direction of the first gas is perpendicular to the upper surface of the susceptor, and the discharge direction of the second gas and the susceptor The upper surface is parallel.

In the embodiment, the A region corresponds to the D region, and the B region corresponds to the C region, that is, the high concentration distribution region of the first gas corresponds to the low concentration distribution region of the second gas, and the first gas The low concentration distribution region corresponds to a high concentration distribution region of the second gas. This is because the boundary point between the high concentration distribution region and the low concentration distribution region of the first gas in this embodiment coincides with the boundary point between the low concentration distribution region and the high concentration distribution region of the second gas. However, in other embodiments of the present invention, the boundary between the boundary of the high concentration distribution region and the low concentration distribution region of the first gas and the boundary between the low concentration distribution region and the high concentration distribution region of the second gas may not coincide, thereby The high concentration distribution region of the gas may also correspond to a high concentration distribution region of the second gas, or the low concentration distribution region of the first gas may also correspond to a low concentration distribution region of the second gas, which does not limit the protection range of the present invention. .

Further, the B region of the first gas may include a zero distribution region, that is, at least a portion of the region corresponding to the C region of the second gas may not include the first gas. Similarly, the D region of the second gas may also include a zero distribution region, that is, at least a portion of the region corresponding to the A region of the first gas may not include the second gas. The larger the proportion of the zero-distribution region in the low-concentration distribution region (ie, the B region or the D region), the smaller the amount of the first gas and the second gas reacted in advance, and the higher the utilization efficiency of the two gases.

The first gas distribution in the high distribution region (ie, the A region) of the first gas may be uneven due to gas diffusion, and the first gas distribution in the low distribution region (ie, the B region) of the first gas may be uneven . Similarly, the second gas distribution in the high distribution region (ie, the C region) of the second gas may also be non-uniform, and the second gas distribution in the low distribution region (ie, the D region) of the second gas may also be uneven.

The A area is mainly an area corresponding to the first air outlet, and the C area is mainly an area corresponding to the second air outlet. Due to gas diffusion, the concentration of the first gas decreases as the distance from the first gas outlet increases, that is, the concentration of the first gas in the region closer to the first gas outlet is larger, the distance from the first gas The concentration of the first gas in the region where the distance from the gas outlet is farther is smaller. Similarly, the concentration of the second gas decreases as the distance from the second gas outlet increases.

The number of the A area, the B area, the C area, and the D area in the embodiment may be in the range of 4 to 50, such as 4, 10, 18, 30, or 50. The number or the area of each area may be the same or different, and the specific shape is determined by the distribution shape and the number of the corresponding air outlets, which is not limited by the present invention.

The first gas and the second gas are mainly used for reaction to form a metal organic compound, and the metal organic compound in the embodiment may be a III-V semiconductor compound. At this time, the first gas may include a group III metal organic source, the second gas includes a group V hydride source; or the first gas includes a group V hydride source, and the second gas includes a group III Metal organic source. Further, the first gas and the second gas may further include a carrier gas or the like.

Preferably, the first gas comprises a Group III metal organic source and the second gas comprises a Group V hydride source. Since the price of the Group III metal organic source is much higher than the price of the Group V hydride source, the vertical flow of the Group III metal organic source to the upper surface of the substrate can greatly reduce the material waste of the Group III metal organic source, thereby further reducing the production cost; In addition, since the Group V hydride source is an excess reactant, it is only necessary to control the flow rate of the Group III metal organic source to control the reaction rates of the two gases simply and efficiently.

Specifically, the group III metal organic source may be one or more of Ga(CH3)3, In(CH3)3, Al(CH3)3, Ga(C2H5)3, Zn(C2H5)3 gas; The Group V hydride source may be one or more of NH3, PH3, AsH3 gases; the carrier gas may be one or more of hydrogen, nitrogen or an inert gas.

The susceptor 100 in this embodiment may further include a heating unit (not shown) for heating the substrate 200 to maintain the temperature of the substrate 200 at a temperature range favorable for the reaction of the two gases. The heating unit may be disposed below the base 100 or integrated within the base 100. Specifically, the heating unit may be a radio frequency heater or a resistance heater, etc., and may be differently selected according to the size and material of the reaction chamber 300.

In addition, in order to better control the temperature of the substrate 200, the chemical vapor deposition apparatus in this embodiment may further include a cooling device disposed at the top of the reaction chamber 300 for reducing the temperature of the first gas or the second gas. . Specifically, the cooling device may be cooled by water cooling or air cooled, and the corresponding specific The structure is well known to those skilled in the art and will not be described again.

The first air intake device 500 and the second air intake device 600 in the embodiment may be respectively fixed on the top of the reaction chamber 300. The center of the base 100 may be provided with a spindle, and the base 100 may be rotated about the spindle by the rotary drive unit 400. When the susceptor 100 rotates, the distribution of the two gases may change slightly due to the rotation of the susceptor 100 (eg, the highest concentration distribution of the two gases in the corresponding tenth map may be shifted to the right), A The location of the area and the C area also changes accordingly. However, the distribution trends of the two gases are consistent, so the A region is still spaced from the C region, the A region still corresponds to the D region, and the C region still corresponds to the B region. The average concentration of the first gas in the A region is greater than B. The average concentration of the first gas in the region, the average concentration of the second gas in the C region is greater than the average concentration of the second gas in the D region. The substrate 200 on the susceptor 100 rotates along with the susceptor 100. During the rotation of the substrate 200, the substrate 200 sequentially passes through the A region, the C region, the A region, and the C region, ie, the first gas, the first The two gases, the first gas, the second gas ... will sequentially pass over the substrate. By controlling the rotational speed of the substrate, the area ratio of the A region and the C region, the uniformity of the metal organic compound film deposited by the reaction of the first gas and the second gas on the upper surface of the substrate can be improved.

At this time, since the second gas (i.e., the group V hydride source) is an excess gas, the uniformity of the reaction rate is determined only by the distribution of the first gas on the substrate 200, and thus the size and density of the first gas outlet are adjusted. , the reaction rate of the first gas and the second gas can be controlled, so the embodiment can easily adjust the reverse Should be uniform in rate.

In the embodiment, the susceptor 100 may be circular, and a plurality of the substrates 200 are distributed around the mandrel on the susceptor 100. Specifically, the susceptor 100 may include at least one substrate carrier (not shown) disposed on the substrate carrier. The number of substrate carriers is the same as the number of substrates. The substrate carrier can be rotated about its geometric center.

In the embodiment, a plurality of substrates 200 are carried on the susceptor 100, so that film deposition can be performed on the plurality of substrates 200 at the same time, thereby improving production efficiency.

It should be noted that the susceptor 100 may also have other shapes. The substrate 200 may also be distributed on the susceptor 100 in other manners, which does not limit the scope of protection of the present invention.

In a specific example, the second air intake device 600 is disposed in an intermediate portion of the reaction chamber 300, the second gas flows to an edge region of the reaction chamber 300, and the C region of the second gas is centered on the mandrel. Radial distribution (as shown in Figure 11). The first air outlet of the first air intake device corresponds to a region outside the C region, such that the first gas flows vertically to a region outside the C region, and finally the A region of the first gas is also radiated centering on the mandrel. The shape is distributed, and the A area and the C area are arranged at intervals.

Specifically, the A region and the B region of the first gas are fan-shaped with the mandrel of the susceptor 100 as a vertex, and the C region and the D region of the second gas are also scalloped with the mandrel of the susceptor 100 as a vertex. . The size of the sector corresponding to the A area may be the same as the size of the sector corresponding to the C area, or may be different.

The horizontal section of the second air guide disc described in the eleventh figure may be circular. The second air outlet corresponds to the C area of the second gas. The second air intake device 600 may include a second air intake pipe (not shown) and a second air guide disk, and a plurality of second air outlets are disposed on the vertical surface of the second air guide disk. The second gas flows horizontally to the upper surface of the substrate through the second intake pipe, the second air guide pipe, and the second air outlet.

The twelfth figure shows a distribution diagram of the second air outlet 620 after the partial second intake pipe 610 is deployed in the circumferential direction. It should be noted that the second air outlet 620 may be evenly arranged on the second air inlet pipe 610 or may be unevenly arranged. The present invention does not limit this.

Referring to the thirteenth figure, the horizontal section of the second air guide disk may also be a polygon such as a pentagon. At this time, the A area and the C area are still arranged at intervals.

Similarly, the first air intake device may further include a first air intake pipe and a first air guide disk, and a plurality of first air outlets are disposed on a horizontal surface of the first air guide disk, and the first gas is sequentially Flowing horizontally to the upper surface of the substrate via the first intake pipe, the first air guide pipe, and the first air outlet. The first air outlet corresponds to the A area of the first gas.

In this embodiment, the vertical distance between the first air intake device 500 and the upper surface of the substrate 200 and the vertical distance between the second air intake device 600 and the upper surface of the substrate 200 may be the same or different, which does not limit the present invention. The scope of protection.

It should be noted that, in other embodiments of the present invention, the entire pedestal may be divided into a plurality of regions, and the first gas is still in each region. The high distribution area and the high distribution area of the second gas are distributed in the arrangement shown in FIG. 11 or FIG.

In another specific example, the second air intake device may also be disposed in a peripheral region of the reaction chamber, and the second gas flows to an intermediate portion of the reaction chamber, and details are not described herein.

In this embodiment, by changing the arrangement of the two air intake devices, the first gas flows mainly through the convection perpendicularly to the upper surface of the substrate, and the second gas mainly flows to the upper surface of the substrate by diffusion, and the two gases respectively reach the base. The upper surface of the sheet, and in turn the two gases react on the upper surface of the substrate to form a metal organic compound. Since at least a majority of the first gas directly reaches the upper surface of the substrate without passing through the second gas, the reaction of the first gas and the second gas before reaching the substrate is avoided, and the use efficiency of the two reaction gases is improved. It also increases the reaction rate, increases productivity, and reduces production costs.

In summary, this creation has indeed met the requirements of the invention patent, and applied for a patent in accordance with the law. However, the above-mentioned embodiments are merely preferred embodiments of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and those skilled in the art will be able to make equivalent modifications or variations in accordance with the spirit of the present invention. It should be covered by the following patent application.

1‧‧‧reactor

11‧‧‧ Direction of the first reactive gas flow

13‧‧‧heating equipment

2‧‧‧Processing room

20‧‧‧ substrate seat surface

3‧‧‧ gas inlet components

4‧‧‧Substrate seat

5‧‧‧Substrate

6‧‧‧ first opening

9‧‧‧Pretreatment equipment

100‧‧‧Base

150‧‧‧ mandrel

200‧‧‧ substrates

300‧‧‧Reaction chamber

400‧‧‧Rotary drive unit

500‧‧‧First air intake

600‧‧‧second air intake

610‧‧‧Second intake pipe

620‧‧‧Second air outlet

The first figure is a schematic structural view of a metal organic compound chemical vapor deposition apparatus in a prior art; the second figure is a metal organic compound chemical vapor deposition in the embodiment of the present invention. Schematic diagram of the method; the third diagram is a schematic diagram of the gas distribution when the susceptor is not rotated in the embodiment of the present invention; the fourth diagram is a schematic diagram of the distribution of the first gas concentration in the third diagram; the fifth diagram is the second diagram in the third diagram Schematic diagram of the distribution of the gas concentration; the sixth diagram is a schematic diagram of the gas distribution when the susceptor rotates in the embodiment of the present invention; the seventh diagram is a schematic diagram of the susceptor-bearing substrate in the embodiment of the present invention; Schematic diagram of the first gas distribution in the reaction zone; the ninth diagram is a schematic diagram of the second gas distribution in the reaction zone in the embodiment of the present invention; and the tenth diagram is the structure of the metal organic compound chemical vapor deposition apparatus in the embodiment of the present invention Figure 11 is a schematic view showing the structure of the second air intake device in the tenth figure; the twelfth figure is a schematic view of the second air intake device in the circumferential direction after the embodiment of the present invention; Another structural schematic diagram of the second air intake device in the tenth figure.

100‧‧‧Base

500‧‧‧First air intake

600‧‧‧second air intake

Claims (35)

A metal organic compound chemical vapor deposition method, comprising: providing a pedestal and at least one substrate, the pedestal having an upper surface, the substrate being disposed on an upper surface of the pedestal; providing for transmitting the first a first air intake device having a plurality of first air outlets and a second air intake device having a plurality of second air outlets for transporting the second gas, the first gas being ejected along the first air outlet The direction is at an angle with a direction in which the second gas is ejected along the second air outlet, the angle of the angle is 60 degrees to 120 degrees; the first gas and the second gas are on the substrate Forming a reaction region thereon, and depositing a layer of a metal organic compound on the upper surface of the substrate; a concentration gradient distribution of the first gas in the reaction region, including an A region and a B region, the first gas average of the A region a concentration of the first gas having a higher concentration than the B region; a concentration gradient distribution of the second gas in the reaction region, including a C region and a D region, the second gas having a higher average concentration than the C region Area D The average concentration of the second gas; the A region and the C region spaced, said substrate sequentially through the A region and the C region. The metal organic compound chemical vapor deposition method according to claim 1, wherein the first gas is ejected along the first gas outlet and the second gas is along the second gas outlet. The angle formed by the direction of the ejection is 90 degrees. The metal organic compound chemical vapor deposition method according to claim 1, wherein the A region corresponds to the D region; and the B region corresponds to the C region. The method for chemical vapor deposition of a metal organic compound according to claim 1, wherein the number of the A region, the B region, the C region, and the D region ranges from 4 to 50. The metal organic compound chemical vapor deposition method according to claim 1, wherein the base is provided with a mandrel, the base is rotated around the mandrel, and the base is circular, a plurality of A substrate is distributed around the mandrel on the base. The metal organic compound chemical vapor deposition method according to claim 5, wherein the A region, the B region of the first gas or the C region and the D region of the second gas are all on the mandrel The center is radially distributed. The metal organic compound chemical vapor deposition method of claim 1, wherein the susceptor comprises at least one substrate carrier, the substrate being disposed on the substrate carrier. The metal organic compound chemical vapor deposition method of claim 7, wherein the substrate carrier rotates around its geometric center. The metal organic compound chemical vapor deposition method according to claim 1, wherein the first gas comprises a group III metal organic source, and the second gas Includes a Group V hydride source. The metal organic compound chemical vapor deposition method of claim 1, wherein the first gas comprises a Group V hydride source, and the second gas comprises a Group III metal organic source. The metal organic compound chemical vapor deposition method according to claim 9 or 10, wherein the group III metal organic source comprises Ga(CH3)3, In(CH3)3, Al(CH3)3, One or more of Ga(C2H5)3, Zn(C2H5)3 gases; the Group V hydride source comprises one or more of NH3, PH3, AsH3 gases. The metal organic compound chemical vapor deposition method according to claim 1, wherein the concentration of the first gas decreases as the distance from the first gas outlet increases. The metal organic compound chemical vapor deposition method according to claim 1, wherein the concentration of the second gas decreases as the distance from the second gas outlet increases. A metal organic compound chemical vapor deposition apparatus comprising: a reaction chamber; a susceptor disposed in the reaction chamber, the susceptor having an upper surface, at least one substrate disposed on an upper surface of the susceptor; and a rotary drive a unit connected to the base for rotating the base; one or more first air intake devices, each of the first air intake devices including a plurality of An air outlet for transmitting the first gas; one or more second air intake devices, each of the second air intake devices including a plurality of second air outlets for transmitting a second gas; the first gas The direction of the discharge along the first air outlet is at an angle with the direction in which the second gas is ejected along the second air outlet, and the angle of the angle is 60 degrees to 120 degrees; The second gas forms a reaction region above the substrate, and a layer of a metal organic compound is deposited on the surface of the substrate; the first gas is distributed in a concentration gradient in the reaction region, including the A region and In the B region, the first gas average concentration of the A region is higher than the first gas average concentration of the B region; the concentration gradient distribution of the second gas in the reaction region, including the C region and the D region, The second gas average concentration of the C region is higher than the second gas average concentration of the D region; the A region is spaced apart from the C region, and the substrate passes through the A region and the C region in sequence. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the first gas is ejected along the first air outlet and the second gas is along the second air outlet. The angle formed by the direction of the discharge is 90 degrees. The metal organic compound chemical vapor deposition apparatus according to claim 14, wherein the A region corresponds to the D region; and the B region corresponds to the C region. The metal organic compound chemical vapor deposition apparatus according to claim 14, wherein the number of the A region, the B region, the C region, and the D region ranges from 4 to 50. The metal organic compound chemical vapor deposition apparatus according to claim 14, wherein the base is provided with a mandrel, the base is rotated around the mandrel, and the base is circular, a plurality of A substrate is distributed around the mandrel on the base. The metal organic compound chemical vapor deposition apparatus according to claim 18, wherein the A region, the B region of the first gas, or the C region and the D region of the second gas are all on the mandrel The center is radially distributed. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the susceptor comprises at least one substrate carrier, the substrate being disposed on the substrate carrier. The metal organic compound chemical vapor deposition apparatus of claim 20, wherein the substrate carrier rotates about its geometric center. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the first gas comprises a Group III metal organic source, and the second gas comprises a Group V hydride source. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the first gas comprises a group V hydride source, the second gas Includes a Group III metal organic source. The metal organic compound chemical vapor deposition apparatus according to claim 22 or claim 23, wherein the group III metal organic source comprises Ga(CH3)3, In(CH3)3, Al(CH3)3, One or more of Ga(C2H5)3, Zn(C2H5)3 gases; the Group V hydride source comprises one or more of NH3, PH3, AsH3 gases. The metal organic compound chemical vapor deposition apparatus according to claim 14, wherein the concentration of the first gas decreases as the distance from the first gas outlet increases. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the concentration of the second gas decreases as the distance from the second gas outlet increases. The metal organic compound chemical vapor deposition apparatus according to claim 14, wherein the susceptor has a heating unit for heat-treating the substrate. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the first air intake device or the second air intake device is fixed to a top of the reaction chamber. The metal organic compound chemical vapor deposition apparatus of claim 14, further comprising: a cooling device disposed at the top of the reaction chamber Used to lower the temperature of the first gas or the second gas. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the first air intake device comprises a first air intake pipe and a first air guide disk, and a horizontal surface of the first air guide plate A plurality of first air outlets are disposed, and the first gas flows out in a direction perpendicular to the upper surface of the substrate via the first air inlet tube, the first air guide tray, and the first air outlet. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the second air intake device comprises a second air intake tube and a second air guide disk, and the vertical surface of the second air guide disk A plurality of second air outlets are disposed, and the second gas flows out in a direction parallel to the upper surface of the substrate via the second air inlet tube, the second air guide tray, and the second air outlet. The metal organic compound chemical vapor deposition apparatus of claim 14, wherein the second gas inlet device is disposed in an intermediate portion of the reaction chamber, and the second gas flows to an edge region of the reaction chamber. The metal organic compound chemical vapor deposition apparatus according to claim 14, wherein the second air intake means is disposed in a peripheral region of the reaction chamber, and the second gas flows to an intermediate portion of the reaction chamber. The metal organic compound chemical vapor deposition apparatus according to claim 31, wherein the second air guide disk has a circular cross section. Metal-organic compound chemical vapor deposition as described in claim 31 The device has a horizontal cross section of the second air guide disk.