JPH0967192A - Vapor growth device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device which is capable of growing many sheets of wafers grown with homogeneous signal crystal thin films having the good quality at one time and has excellent mass productivity in the case GaN semiconductor thin films are grown by using an MOCVD (org. metal chemical vapor growth) method. SOLUTION: Plural sheets of substrates 12 are installed on a susceptor 6. The device is provided with reactive gas introducing pipe 5a, 5b which open near the substrates 12 and introduce reactive gases of the group III and the group V to each of the respective substrates 12. Further, the central part of the susceptor 6 is provided with a discharge port 7 for discharging the reactive gases. Besides, the susceptor is provided with partition plates, reactive gas guide plated, etc., in order for the reactive gases to be smoothly discharged to this discharge port 7.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a vapor phase growth apparatus for forming a semiconductor crystal thin film on a substrate using a metal organic chemical vapor deposition method (hereinafter referred to as MOCVD method).

[0002]

2. Description of the Related Art In recent years, GaN has been used as a material for blue light emitting devices.
-Based compound semiconductor thin films have received a great deal of attention and active research is underway. FIG. 8 shows a schematic vertical sectional view of an example of a conventional vapor phase growth apparatus used when growing a GaN-based compound semiconductor thin film by this MOCVD method.

In FIG. 8, the opening of the gas introducing pipe 81 is provided in the central portion of the ceiling of the cylindrical chamber 82, and a mixed gas of N ₂ and H ₂ (hereinafter referred to as a sub-flow) from the top of the substrate for suppressing the reaction gas. Gas) is introduced. Further, the reaction gas introduction pipes 83 and 84 are provided so as to be opened together in the chamber 82 through the side portion of the chamber 82,
The reaction gas introduction pipe 83 introduces TMG or the like, which is a group III raw material, into the chamber 82, and the reaction gas introduction pipe 84 introduces NH _3, which is a group V raw material, into the chamber 82.
Further, the carbon susceptor 85, which is a substrate mounting table, is provided in the central portion inside the chamber 82, the heater 86 is provided below the carbon susceptor 85, and the central portion below the carbon susceptor 85 is provided. A susceptor rotating shaft 87 is provided to rotatably support the carbon susceptor 85. A sapphire substrate 88 for growing a semiconductor thin film is placed on the upper surface of the carbon susceptor 85. Further, a gas exhaust port 89 is provided on the lower side of the cylindrical chamber 82. The conventional vapor phase growth apparatus is configured as described above.

With the above structure, the MOCV of GaN is usually used.
Since D growth is grown at a substrate temperature of 1000 ° C. or higher,
An upward flow due to thermal convection is generated on the susceptor 85, and it becomes difficult for the reaction gas to reach the sapphire substrate 88. In order to suppress the upward flow due to the thermal convection, the sapphire substrate 88
N ₂ and H ₂ are supplied as sub-flow gases from a gas introduction pipe 81 opened at the upper part of the. Also, NH ₃ and T
Since MG reacts violently in the gas phase to form clusters, separate reaction gas introduction pipes 83, 84 are provided so that NH ₃ and TMG can be mixed in the vicinity of the sapphire substrate 88.
Is being supplied into the chamber 82.

As a substrate used for film growth, a GaN-based single crystal wafer cannot be easily obtained. Therefore, a sapphire substrate 88 having a lattice constant close to that of the GaN-based semiconductor is used for single crystal growth.

[0006]

By the way, MOCVD is performed.
In the crystal growth of a GaN-based compound by the sapphire method, in order to suppress unnecessary reactions in the vapor phase, a group III source gas and a group V source gas are introduced into the chamber 82 by separate introduction pipes 83 and 84, and sapphire is introduced. It was necessary to mix both in the vicinity of the substrate 88. When a film is grown by introducing these Group III original gas and Group V original gas into the chamber 82 by separate introduction pipes 83 and 84, the uniformity of the crystal to be grown depends largely on the mixed state of the gases. Moreover, it is difficult to increase the area because the region where a high-quality single crystal film can be formed is limited. Furthermore, when a heterogeneous compound is used as the substrate, it is extremely difficult to obtain a uniform and high-quality single-crystal thin film having a large area because a slight disturbance of the flow of the original gas leads to lattice defects. For the above reasons, it is not easy to scale up the substrate and make it into a multi-wafer, which has been a serious problem in mass production.

Further, as a method of suppressing the disturbance of the raw material gas and simultaneously growing semiconductor thin films on a plurality of substrates, a plurality of substrates are installed on a circular susceptor, and a blowout port of a raw material gas introduction pipe is provided at the central portion of the susceptor. A vapor phase growth apparatus of a type has been devised in which a gas is caused to flow in the circumferential direction from the central portion of the susceptor and exhausted, but when growing a good quality GaN-based semiconductor film, the substrate temperature is set to 1000 ° C. or higher. High temperature is required, and if a raw material gas introduction pipe is installed in such a central portion of the susceptor, the raw material gas is decomposed by heat from the susceptor in the introduction pipe, so that it is difficult to use in the method of manufacturing a GaN-based semiconductor thin film.

The present invention solves the above-mentioned conventional problems, and when growing a GaN-based semiconductor thin film on a substrate,
An object of the present invention is to provide a vapor phase growth apparatus capable of growing a large number of homogeneous and high quality single crystal thin film growth wafers at one time and having excellent mass productivity.

[0009]

The vapor phase growth apparatus of the present invention uses a metalorganic chemical vapor deposition method to form GaN on a substrate.
In a vapor phase growth apparatus for forming a system-based semiconductor crystal thin film, a substrate holding means for holding the substrate is provided in a reaction tube, and a reaction gas is introduced into the vicinity of the substrate held by the substrate holding means to introduce a reaction gas. A tube is provided on the side surface of the reaction tube, and an exhaust port for exhausting the reaction gas is provided in the central portion on the substrate holding means, whereby the above object is achieved.

Further, preferably, the substrate holding means in the vapor phase growth apparatus of the present invention is capable of holding a plurality of the substrates concentrically with the exhaust port as a center, and the reaction gas introduction pipe is provided with the plurality of substrates. A reaction gas is individually supplied to.

Further, preferably, it is arranged so as to face the opening of the reaction gas introducing pipe in the vapor phase growth apparatus of the present invention.
A partition means is provided to evenly partition the exhaust ports in the same number as the number of substrates.

Further, preferably, an inert gas introducing pipe for supplying an inert gas for pressing the reactive gas is provided in parallel with the reactive gas introducing pipe in the upper part of the reactive gas introducing pipe in the vapor phase growth apparatus of the present invention. The inert gas is supplied to each substrate in parallel with the reaction gas.

Further preferably, in the vapor phase growth apparatus of the present invention, an inert gas introducing pipe for supplying an inert gas for exhaust is provided directly above the exhaust port provided in the central portion of the substrate holding means. The outlet diameter of the inert gas introducing pipe is smaller than the outlet diameter.

Further preferably, the substrate holding means in the vapor phase growth apparatus of the present invention has a shape in which the upper inner surface holding a plurality of substrates is hollowed out in a polygonal pyramid shape or a conical shape.
An exhaust port is provided in the center of the bottom of the upper inner surface, and a reaction gas introduction pipe is provided parallel to the inclination of the upper inner surface, and the reaction gas is individually supplied to the plurality of substrates in parallel from the side. . Further, preferably, a reaction gas guide plate is provided so as to cover the passage portion of the reaction gas reaching the exhaust port for each substrate placed on the upper surface of the substrate holding means in the vapor phase growth apparatus of the present invention.

With the above structure, the operation will be described below.

In the present invention, the optimum gas mixing region in which a high-quality film can be obtained by providing a group III and group V reactive gas introduction pipe for each substrate is a region of the size of one substrate. Should be secured. Further, by providing an exhaust port for exhausting the reaction gas in the central portion of the susceptor, there is no influence of the gas from the other reaction gas introduction pipes, so that the gas mixing state is not disturbed. Furthermore, by providing partition plates of the same shape evenly at the exhaust port so as to face each substrate, the raw material gases that pass through each substrate and are exhausted to the exhaust port collide with each other to prevent gas flow. Unreacted group III and group V source gases can be supplied to each substrate without being disturbed or causing the reacted source gas to flow onto other substrates. Furthermore, if an inert gas for pressing the reaction gas is blown out from the side for each substrate in parallel with the reaction gas,
It is possible to minimize gas turbulence. Furthermore, by introducing an inert gas directly above the exhaust port for exhausting the reaction gas located in the center of the susceptor, it is possible to smoothly guide each reaction gas to the exhaust port without collision between the reaction gases. Become. In addition, an inert gas inlet pipe with a smaller outlet diameter than the exhaust port is installed above the exhaust port, and an inert gas with a high flow velocity is allowed to flow through the exhaust port. Is exhausted, it is possible to further reduce collision and interference between the reaction gases. Furthermore, if the reaction gas guide plate is provided so as to cover the passage portion of the reaction gas, the reaction gas can be smoothly guided to the exhaust port and exhausted without spreading in a wide area in the chamber.

Therefore, according to the present invention, Ga is formed on the substrate.
When growing an N-based semiconductor thin film, it is possible to grow a large number of homogeneous and high-quality single crystal thin film growth wafers at a time, which facilitates multi-wafering and improves mass productivity.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

(Embodiment 1) FIG. 1 is a cross-sectional view of a main part of a chamber portion of a vapor phase growth apparatus according to Embodiment 1 of the present invention, and FIG. 2 is a vertical view of the chamber portion of the vapor phase growth apparatus of FIG. FIG. In FIGS. 1 and 2, a subflow gas introduction pipe 2 is provided in the center of the ceiling of a cylindrical chamber 1 as a reaction pipe, and N ₂ and H ₂ are supplied as subflow gases. Further, on the upper side wall of the cylindrical chamber 1, reaction gas introduction pipes 5a, 5b are provided both of which are opened to a position near the substrate inside the chamber 1 through a flange 4 to which the gas pipes 3a, 3b are connected together. Each reaction gas is introduced into the chamber 1, and the reaction gas is individually supplied to the plurality of substrates. Further, a circular susceptor 6 serving as a substrate holding means is provided in the upper center of the chamber 1, and a gas exhaust port 7 for exhausting a reaction gas is provided in the center of the circular susceptor 6. ing. The gas exhaust port 7 is connected to the outside through a central portion of the bottom of the cylindrical chamber 1 by an exhaust pipe 8, and the exhaust pipe 8 is provided with a reaction pressure control valve 9 provided outside the chamber 1.
Via an exhaust pump (not shown). Further, substrate heating heaters 10 are provided below the circular susceptor 6 at predetermined intervals, and the wirings of these substrate heating heaters 10 are provided at the bottom of the cylindrical chamber 1. It is taken out to the outside through the current introducing terminal 11. Further, on the upper surface of the circular susceptor 6, a plurality of sapphire substrates 12 are placed and held in a concentric circle centered on the exhaust port 7, and the reaction gas introduction pipes 5a and 5b are both lateral portions. Therefore, each sapphire substrate 12 is opened, and the subflow gas introduction pipe 2 is placed at a position where it is opened above each sapphire substrate 12. In the case of the present embodiment, four sapphire substrates 12 are placed and held in a vertically symmetrical position in FIG. 1 on a concentric circle centered on the exhaust port 7. With the above, the vapor phase growth apparatus in Embodiment 1 is configured, and M
A GaN-based semiconductor crystal thin film is formed on the substrate by using the OCVD method.

With the above structure, when GaN is grown, TMG is used as a group III source gas, and Al is used.
When growing a mixed crystal system such as GaN or InGaN,
TMG, TMA and TMI are used. Further, NH ₃ is used as the group V source gas in any case. Further, a mixed gas of H ₂ and N ₂ is used as the subflow gas. II
H ₂ is used as a carrier gas for the group I source gas and the group V source gas, and they are separately guided to the reaction gas introduction pipes 5a and 5b to suppress unnecessary reactions in the gas phase. The gases blown out from the openings of the respective reaction gas introducing pipes 5a and 5b are mixed under optimum conditions before reaching the upper side of the sapphire substrate 12 from the side, and grow a single crystal film on the sapphire substrate 12. After that, the original gas that has passed over the sapphire substrate 12 is exhausted from the gas exhaust port 7 provided in the central portion of the susceptor 6 through the exhaust pipe 8 by the exhaust pump, and the reaction pressure control valve 9 The displacement is controlled.

Further, from the subflow gas introduction pipe 2 provided above the sapphire substrate 12, it is possible to prevent the source gas from rising on the susceptor 6 due to heat and to press the source gas onto the sapphire substrate 12 from above. Further, a mixed gas of H ₂ and N ₂ is supplied onto the sapphire substrate 12. Here, by disposing the gas exhaust port 7 in the central portion of the susceptor 6, the raw material gas for each sapphire substrate 12 does not mix as the raw material gas for the other sapphire substrates 12, and the respective exhaust ports are smoothly exhausted. 7 is exhausted to the outside of the chamber 1 through the exhaust pipe 8.

An example of growth conditions for growing a GaN single crystal film on a substrate in the vapor phase growth apparatus of Embodiment 1 will be described below.

H ₂ at 10 (liter / min) and TMG at 50 (μmol / min) are passed through the reaction gas introducing pipe 5a. In addition, H ₂ is added to the reaction gas introducing pipe 5b at 5 (liter / min).
Then, flow NH ₃ at 5 (liter / minute). Further, H ₂ is 5 (liter / min) in the subflow gas introduction pipe 2,
Flush with N ₂ at 5 (liters / minute). At this time, the film growth pressure is 760 Torr, and after growing an appropriate buffer layer on the sapphire substrate 12 at a substrate temperature of about 600 ° C., the substrate temperature is raised to 1050 ° C. to grow a GaN single crystal film.

According to the above, in the vapor phase growth apparatus as shown in the conventional example, when a plurality of substrates having a size of 2 inches are installed, the uniformity of the layer thickness of the grown single crystal film is significantly lowered,
Although there was a variation of ± 20% or more in all the installed wafers, in the vapor phase growth apparatus described in the first embodiment, four 2-inch wafers were installed and the uniformity of the layer thickness was uniform in all four wafers. It was suppressed to within ± 5%, and a growth wafer of uniform film quality could be obtained with good mass productivity.

(Embodiment 2) FIG. 3 shows Embodiment 2 of the present invention.
2 is a cross-sectional view of the essential part of the chamber portion of the vapor phase growth apparatus in FIG.

In FIG. 3, four sapphire substrates 12 are provided.
Are placed on the circular susceptor 6, so that the partition plates 20 are crossed orthogonally to each other for each of the four sapphire substrates 12, and four of them are stood up so that the exhaust ports 7 are evenly and uniformly shaped. It is provided so as to be divided. Also, this partition plate 20
The partition walls are provided so as to face the openings of the reaction gas introducing pipes 5a and 5b, respectively, and also face the side surface of the sapphire substrate 12.

By attaching this partition plate 20 to the exhaust port 7, the reaction gas introducing pipes 5a and 5b can be connected to the chamber 1.
The reaction gas introduced into the inside may collide with or interfere with the reaction gas that has passed on the other sapphire substrate 12 mounted on the susceptor 6 after passing on the sapphire substrate 12. Instead, the gas can be exhausted to the outside of the chamber 1 through the exhaust port 7.

(Third Embodiment) FIG. 4 shows a third embodiment of the present invention.
FIG. 3 is a vertical cross-sectional view of the chamber of the vapor phase growth apparatus in FIG.

In FIG. 4, gas pipes 3a, 3b, 3c
Reaction gas introduction pipe 5 opening at a position near the substrate inside the chamber 1 via a flange 4a connected together
a, 5b and the inert gas introducing pipe 5c are installed in parallel in this order from below. That is, the inert gas introduction pipe 5c
Are arranged above the reaction gas introducing pipes 5a and 5b. The N ₂ gas is introduced into the chamber 1 through the inert gas introduction pipe 5c, and the introduced reaction gas suppresses the rise of each reaction gas due to the heat of the susceptor 6. Therefore, in the third embodiment, since the inert gas for pressing the reaction gas is blown from the side of each sapphire substrate 12 in parallel with the reaction gas, the gas turbulence can be minimized.

(Fourth Embodiment) FIG. 5 shows a fourth embodiment of the present invention.
4 is a vertical cross-sectional view of a main part of the chamber portion of the vapor phase growth apparatus in FIG.

In FIG. 5, an exhaust inert gas introducing pipe 21 is provided via a flange 22 and an exhaust exhaust inert gas introducing pipe 23 is provided directly above the exhaust port 7 of the susceptor 6. Using the inert gas introducing pipe 23, N ₂ gas is supplied as an inert gas at a high flow rate from directly above the exhaust port 7 for exhausting the reaction gas located at the center of the susceptor 6. The N ₂ gas having a high flow velocity is smoothly exhausted from the exhaust port 7. The reaction gas that has passed over each substrate along with this N ₂ gas flow can be smoothly exhausted to the exhaust port 7. For this reason, the diameter of the inert gas introducing pipe 23 is configured to be smaller than the diameter of the exhaust port 7.

(Fifth Embodiment) FIG. 6 shows a fifth embodiment of the present invention.
6 is a vertical cross-sectional view of the chamber of the vapor phase growth apparatus in FIG.

In FIG. 6, a susceptor 24 serving as a substrate holding means has a shape in which the upper inner surface for holding a plurality of substrates is hollowed out in a polygonal pyramid shape or a conical shape, and the exhaust port 7 has a bottom center portion of the upper inner surface. The reaction gas introducing pipe is provided so as to be inclined in the direction of inclination of the upper inner surface, and the reaction gas is individually supplied to the plurality of substrates in parallel from the lateral side.

As a result, the upper inner surface of the susceptor 24 is inclined in a polygonal pyramid shape or a conical shape toward the center, so that the reaction gas introduction pipes 5a, 5b can flow when the raw material gas flows through the exhaust port 7. It is not necessary to change the direction of the flow of the source gas flowing on the substrate from the opening of 90 degrees by 90 degrees, and when the raw material gas is guided to the exhaust port 7, the change in the flow direction is an acute angle, so that the gas is smoothly exhausted.

(Sixth Embodiment) FIG. 7 shows a sixth embodiment of the present invention.
6 is a vertical cross-sectional view of the chamber of the vapor phase growth apparatus in FIG.

In FIG. 7, the reaction gas guide plate 25 is
For each substrate placed on the upper surface of the susceptor 6, its exhaust port 7
Is provided so as to cover the upper part and the side part of the substrate in the passage part of the reaction gas reaching. The reaction gas guide plate 25 is open at the portion where the opening of the inert gas introduction pipe 23 provided directly above the exhaust port 7 is located, and the inert gas is introduced through the opening of the reaction gas guide plate 25. The gas vigorously flows into the exhaust port 7, and accordingly, the reaction gas guide plate 2
The reaction gas guided and flowed at 5 is smoothly guided to the exhaust port 7. When the inert gas introducing pipe 23 is not provided, it is not necessary to provide an opening in the upper portion of the reaction gas guide plate 25, and the partition plate of the second embodiment is provided and combined with the reaction gas guide plate 25. You may use it.

By installing the reaction gas guide plate 25 in this way, the reaction gas is smoothly guided to the exhaust port 7 and exhausted without being diffused in a wide range in the chamber 1.

As described above, in each of the above-described embodiments of the present invention, a plurality of substrates are installed on the susceptor, the reaction gas introducing pipes of the group III and the group V are provided for each substrate, and further, in the central part of the susceptor. By providing the exhaust port for exhausting the reaction gas, the optimum gas mixing region capable of obtaining a good quality film should be a region having the size of one substrate.
Since it is not affected by the gas from the other reaction gas introduction pipes and the gas mixing state is not disturbed, it is possible to grow a large number of homogeneous and high-quality single crystal thin film growth wafers at a time. Wafers can be easily formed and mass productivity can be improved.

The reaction gases introduced into the chamber through the respective reaction gas introduction pipes do not collide or interfere with each other, and after the unreacted group III and group V source gases are supplied to each substrate. A partition plate may be provided to divide the exhaust ports into the same number and the same shape as the substrates so that the exhaust ports are smoothly exhausted.

Further, a gas introduction pipe for introducing an inert gas is provided right above an exhaust port for exhausting the reaction gas located at the center of the susceptor, and the inert gas is located at the center of the susceptor by this gas introduction pipe. By vigorously flowing the gas through the exhaust port, the reaction gas can be smoothly exhausted without collision between the reaction gases.

Further, the exhaust can be smoothly performed by widening the angle between the flow direction of the reaction gas introduced from the reaction gas introduction pipe and the exhaust direction of the reaction gas to more than 90 degrees.

In each of the above-mentioned embodiments, four sapphire substrates are installed, but if there is a space for providing a gas introduction pipe on each substrate, any number of plural sapphire substrates can be installed. Needless to say, if the susceptor rotating mechanism is provided, the uniformity is further improved, the yield of devices to be manufactured is increased, and the mass productivity is further improved. Furthermore, in each of the above embodiments, the resistance heating method is adopted as the substrate heating method, but a high frequency heating method or a lamp heating method may be used. Furthermore, in each of the above-described embodiments, the face-up type in which the substrate growth surface is mounted upward is used, but a face-down type growth apparatus in which the substrate growth surface is mounted downward may be used.

[0043]

As described above, according to the present invention, by arranging the gas exhaust port in the central portion of the substrate holding means, the original gases for the individual substrates do not interfere with each other and remain on the substrate. It is possible to grow a crystal film and smoothly exhaust it. As a result, even in GaN-based MOCVD growth in which the crystallinity is greatly affected by the gas mixture state, it is possible to grow multiple wafers at the same time, which is extremely useful for mass production of GaN-based light-emitting devices. is there.

Further, by installing a partition plate at the exhaust port opened on the susceptor which is the substrate holding means, it is possible to further reduce the collision and interference between the reaction gases having passed over the substrate.

[Brief description of drawings]

FIG. 1 is a lateral cross-sectional view of a chamber portion of a vapor phase growth apparatus according to Embodiment 1 of the present invention.

FIG. 2 is a cross-sectional view of a longitudinal main part of a chamber part of the vapor phase growth apparatus of FIG.

FIG. 3 is a lateral cross-sectional view of a chamber portion of a vapor phase growth apparatus according to Embodiment 2 of the present invention.

FIG. 4 is a vertical sectional view of a chamber part of a vapor phase growth apparatus according to a third embodiment of the present invention.

FIG. 5 is a vertical sectional view of a chamber portion of a vapor phase growth apparatus according to Embodiment 4 of the present invention.

FIG. 6 is a vertical sectional view of a main part of a chamber of a vapor phase growth apparatus according to a fifth embodiment of the present invention.

FIG. 7 is a vertical cross-sectional view of a main part of a chamber of a vapor phase growth apparatus according to Embodiment 6 of the present invention.

FIG. 8 is a schematic vertical sectional view showing an example of a conventional vapor phase growth apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 chamber 5a, 5b reaction gas introduction pipe 5c inert gas introduction pipe 6,24 susceptor 7 gas exhaust port 12 sapphire substrate 20 partition plate 23 exhaust inert gas introduction pipe 25 reaction gas guide plate

Claims (7)

[Claims] 1. A vapor phase growth apparatus for forming a GaN-based semiconductor crystal thin film on a substrate using a metal organic chemical vapor deposition method, wherein substrate holding means for holding the substrate is provided in a reaction tube, and the substrate is held. A gas provided with a reaction gas introducing pipe that opens near the substrate held by the holding means and guides a reaction gas to the side surface of the reaction pipe, and an exhaust port for exhausting the reaction gas is provided in the center of the substrate holding means. Phase growth equipment. 2. The substrate holding means is capable of holding a plurality of substrates concentrically around the exhaust port, and the reaction gas introducing pipe applies reaction gas individually to the plurality of substrates. The vapor phase growth apparatus according to claim 1, which is configured to supply the vapor phase. 3. The vapor phase growth apparatus according to claim 1, further comprising partitioning means for partitioning the exhaust ports in the same number as the number of substrates so as to face the opening of the reaction gas introducing pipe. 4. An inert gas introduction pipe for supplying an inert gas for pressing the reaction gas is provided in parallel with the reaction gas introduction pipe above the reaction gas introduction pipe, and the inert gas is parallel to the reaction gas. The vapor phase growth apparatus according to claim 1, wherein the substrate is supplied to each substrate. 5. An inert gas introducing pipe for supplying an inert gas for exhausting is provided right above an exhaust port provided in the central portion of the substrate holding means, and the diameter of the inert gas introducing pipe is The vapor phase growth apparatus according to any one of claims 1 to 4, wherein the exhaust port has a diameter smaller than that of the exhaust port. 6. The substrate holding means has a shape in which an upper inner surface for holding the plurality of substrates is hollowed out in a polygonal pyramid shape or a conical shape, and the exhaust port is provided at a bottom central portion of the upper inner surface. 6. The reaction gas introducing pipe is provided in parallel to the inclination of the upper inner surface, and the reaction gas is individually supplied to the plurality of substrates in parallel from the side. The vapor phase growth apparatus described. 7. The reaction gas guide plate is provided for each substrate placed on the upper surface of the substrate holding means so as to cover the passage portion of the reaction gas reaching the exhaust port. The vapor phase growth apparatus described.