TW201600634A - Intake and cooling device for MOCVD equipment - Google Patents

Abstract

The intake and cooling advice for MOCVD equipment of the present invention is disposed with the spraying head located at the top in the reaction chamber to install the intake piping of the organic metal gas by penetrating into the intake orifice of the isolation gas, so that the isolation gas can form the curtain shape air current and surround the periphery of the transporting organic metal gas to further separate the organic metal gas and the hydride gas just being sprayed to inhibit both from premature reaction to produce parasitism particles; the present invention can also prevent parasitism particles from being formed in the vicinity of intake orifice at the bottom of the intake device, so that the transporting organic metal gas and the hydride gas can be evenly distributed on the foundation support and each substrate to ensure the film growth quality and enhance the film growth rate.

Description

Intake and cooling device for MOCVD equipment

The present invention relates to semiconductor manufacturing equipment, and more particularly to an air intake and cooling apparatus for an MOCVD apparatus.

At present, in the metal organic chemical vapor deposition (hereinafter referred to as MOCVD), a gas of a Group II or III metal organic compound, and a hydride gas containing a Group IV or V element are introduced into a reaction chamber of an MOCVD apparatus to make both When the mixed gas is supplied to the surface of the substrate placed on the bottom of the bottom of the reaction chamber, a thermal decomposition reaction can be performed on the surface of the substrate to epitaxially grow a compound single crystal thin film.

As shown in FIG. 1 and FIG. 2, an air intake device provided in US 2010/0143588 A1 is provided with a gas distribution plate at the top of the reaction chamber, which comprises a plurality of elongated tubular gas distribution elements extending in parallel and alternately first. a gas distribution element and a second gas distribution element. The first reaction source gas is a mixed gas of a Group V hydride (ammonia NH ₃ ) and a carrier gas (hydrogen H ₂ or nitrogen N ₂ ), which is transported through the elongated air inlet of the first gas distribution element to form a long gas. Strip, curtain-like first reactive gas stream. The second reaction source gas is a mixed gas of an organic metal gas (MO, Metal-Organic) and a carrier gas, and the organic metal gas is, for example, trimethylgallium (ie, (CH ₃ ) ₃ Ga, abbreviated as TMG or TMGa), A base aluminum (i.e., [(CH ₃ ) ₃ Al] ₂ , abbreviated as TMA or TMAl) is transported through a set of intake holes of the second gas distributing element to form a second flow of the second reactive gas. At the same time, there is also a carrier gas transported through the gap between the first gas distribution element and the second gas distribution element of the adjacent gas distribution, forming a spaced curtain-like gas stream interposed between the first reaction gas stream and the second reaction gas Between the airflows.

As shown in FIG. 1 , FIG. 2 and FIG. 3 , the air intake device has the following disadvantages: at the edge of the air intake device, different positions on the circumference have different gas mixing states and gas flow rates, and eddy currents are easily formed; The distribution areas of the two reaction source gases after being ejected from the air intake device are alternately elongated strips, which are non-central symmetrical, so that different positions on different substrates or on the same substrate, especially between the central region and the edge region The distribution of the reaction source gas is not uniform, resulting in uneven film formation in the final deposition, which affects product quality. In addition, it is difficult to avoid the problem that the two reaction source gases react prematurely to form GaN and AlN parasitic particles before reaching the surface of the substrate in the air intake device, and the parasitic particles may adhere to the pollution chamber in the reaction chamber, and randomly fall on the substrate to affect the film. The growth pattern causes a part of the organometallic gas to be consumed in the process of growing the parasitic particles, resulting in a decrease in the film growth rate.

US 2009/0169744 A1 provides an embodiment of an air intake device comprising a first gas diffusion chamber for transporting a mixed hydride gas and a carrier gas, the bottom of the diffusion chamber including a first gas conduit for conveying the mixture An organometallic gas and a carrier gas second gas diffusion chamber, the bottom of the diffusion chamber includes a second gas conduit, the gas conduits are arranged in a row, and further comprising a gas for conveying a purge gas (for example, Ar, N ₂ , He, etc.) a third gas diffusion chamber, the bottom of the diffusion chamber includes a plurality of openings arranged in a row and arranged between the first intake conduit and the second intake conduit for isolating the two reactive gases below the third gas diffusion chamber It is also possible to install a cooling jacket to allow the coolant to flow in the cooling jacket to maintain the temperature of the air intake at an appropriate level.

However, taking the first embodiment as an example, the air intake device is not only complicated in structure, but also the bottom surface of the air intake device is a plane, and there are many regions on the plane where no gas flows, and eddy current is easily formed to disturb the parasitic particles, causing parasitic particles. It is difficult to remove the bottom surface attached to the air intake device. Further, the outlet of the lower surface of the third gas diffusion chamber is away from the output positions of the two reaction source gases, and thus it is difficult for the purge gas delivered via the outlet to separate the two reaction source gases or remove the attached parasitic particles.

It is an object of the present invention to provide an intake and cooling device for an MOCVD apparatus that separates an organometallic gas from a hydride gas to suppress premature reaction between the two to generate parasitic particles; and prevent parasitic particles from forming on the underside of the air intake device. Near the gas port; the transported organometallic gas and hydride gas can be evenly distributed on the susceptor and on each substrate.

In order to achieve the above object, the technical solution of the present invention is to provide an air intake and cooling device for an MOCVD apparatus, which is provided with a shower head located at the top of the reaction chamber, and includes:

a plurality of mutually separated reaction gas diffusion chambers, wherein the plurality of reaction gas diffusion chambers comprise a plurality of separators, wherein the separators at the bottom are provided with a plurality of sets of gas conduits, and the reaction gases are introduced into the reaction chamber through the conduits, The plurality of sets of gas conduits includes: a set of first intake ducts for transporting organometallic gases into the reaction chamber of the MOCVD apparatus;

a set of second intake ducts for transporting hydride gas; the organometallic gas and hydride gas carried by the shower head are carried to the surface of the substrate at the bottom of the reaction chamber for film deposition reaction;

A cooling plate is further disposed under the plurality of reaction gas diffusion chambers, and an isolation gas diffusion chamber is formed between the bottom partition plate of the reaction gas diffusion chamber and the cooling plate, and the cooling plate comprises:

a set of first air inlets for conveying an isolation gas into the reaction chamber; each of the first air intake ducts is respectively disposed in a first air inlet corresponding thereto, so that the first inlet a curtain-like airflow formed by the isolation gas transported by the gas port surrounds the periphery of the organometallic gas, and separates the freshly sprayed organometallic gas from the hydride gas;

a set of second air inlets, each having a funnel shape with a lower port diameter greater than an upper port diameter;

The lower end openings of the first air inlet and the second air inlet are spaced apart from each other and alternately arranged on a bottom surface of the cooling plate; each of the second air inlets is connected to a second air inlet duct corresponding thereto The gas obtained by mixing the hydride gas and the carrier gas is transported into the reaction chamber through the second intake port.

Optionally, the first intake duct separately transports an organometallic gas or a mixed gas of an organometallic gas and a carrier gas;

The second intake duct separately transports a hydride gas or a mixed gas of a hydride gas and a carrier gas;

The isolation gas delivered by the first air inlet is a carrier gas or a purge gas or a mixed gas thereof.

Optionally, a first separator, a second separator, and a third separator are disposed inside the plurality of mutually separated reaction gas diffusion chambers;

An isolation gas diffusion chamber formed between the cooling plate and the third partition plate is connected to the first air inlet and the second air inlet opening on the cooling plate;

a second reaction gas diffusion chamber formed between the third partition plate and the second partition plate communicates with the second conduit, and the second conduit is inserted into the corresponding second intake port to make the upper end of the second intake port Surrounding the periphery of the lower end of the second air inlet;

A first reactive gas diffusion chamber passage formed between the second partition and the first partition communicates with the first conduit, and the first conduit is interspersed in the corresponding first inlet.

Optionally, in the cooling plate of the shower head, a position for each of the air inlets and the gas passages communicating therewith is avoided, and a conduit for circulating the cooling medium is provided.

Optionally, a sidewall of the second air inlet is provided with a buffer, and the second air inlet conduit communicates with the second reaction gas diffusion chamber to pass a reaction gas into the buffer zone, and the reaction gas passes through the buffer zone. Flow into the second air inlet. Optionally, the closed bottom end of the second conduit is inserted into the second air inlet, and the gas is delivered through a plurality of openings formed in the side wall of the second conduit.

Optionally, a lower end position of the first air inlet is lower than a lower end position of the first air intake duct disposed therein.

Optionally, the second air inlet is a tapered funnel structure whose angle between the side wall and the vertical direction is constant.

Optionally, the second air inlet is a double-cone funnel structure, and includes an upper portion in which a side wall is at a first angle from a vertical direction, and a lower portion in which a side wall and a vertical direction are at a second angle, where the first angle is smaller than The second angle.

Optionally, the second air inlet is a polyhedral funnel structure, the end edge of the second air inlet is polygonal, and the side wall is provided with a plurality of edges.

Compared with the prior art, the present invention provides an intake and cooling device for an MOCVD apparatus, which has the advantages of:

In the present invention, the gas passage is formed by the partitions disposed in the shower head; a plurality of air inlets are directly opened on the cooling plate, and the cooling medium passages are laterally arranged therebetween to reduce the volume of the entire apparatus; The mouth is evenly distributed, which effectively improves the uniformity of gas distribution on the susceptor and on each substrate, thereby ensuring the film growth quality and increasing the film growth rate.

In the present invention, an intake duct of an organometallic gas is passed through the inlet of the insulating gas, so that the insulating gas can form a curtain-like airflow and surround the periphery of the organometallic gas, thereby displacing the newly injected organic metal gas and the hydride. The gas is separated to inhibit premature reaction between the two to produce parasitic particles.

In the present invention, by expanding the end diameter of some of the air inlets, for example, forming a funnel shape, the area of the bottom surface of the shower head is set as the air inlet, and the air flow of the air inlet is used to blow off the parasitic particles, and the spray is effectively reduced. The area of the area where the parasitic particles on the underside of the showerhead may adsorb.

In a preferred embodiment of the present invention, by designing some of the air inlets into a double-cone funnel structure in which the side walls of the upper and lower sections are different from the vertical direction, the angle of the lower section near the bottom surface of the cooling plate is larger to ensure cooling. The mechanical strength of the inlet and the cooling medium passage are simultaneously established in the plate, and the area of the area where the parasitic particles may be adsorbed is effectively reduced.

The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

As shown in FIG. 4, the air intake device provided by the present invention is a shower head 800 disposed at the top of a reaction chamber 900 of an MOCVD (Metal Organic Chemical Vapor Deposition) apparatus, through a first intake duct 810 disposed, The second intake duct 820 and the first air inlet 830 respectively transport the organometallic gas, the hydride gas into the reaction chamber 900, and carry the carrier gas to the surface of the substrate 920 for film deposition reaction, and also pass The carrier gas transported by the first intake port 830 separates the organometallic gas and the hydride gas from each other to prevent the newly ejected organometallic gas and the hydride gas from reacting too early near the gas inlet of the bottom surface of the shower head 800. Parasitic particles are produced.

As shown in FIG. 5, a set of second air inlets 840 are also provided, which are alternately and evenly distributed with the respective openings of the first group of first air inlets 830 at the bottom surface of the shower head 800. Each of the second intake ducts 820 is connected to a second intake port 840 corresponding thereto, so that the first end of the second intake port 840 surrounds the periphery of the end of the second intake duct 820, and the second intake port 840 delivers a mixed gas of hydride gas and carrier gas to the reaction chamber 900. Each of the first intake ducts 810 is disposed in a first intake port 830 corresponding thereto, and the carrier gas transported by the first intake port 830 forms a curtain-like airflow to be used by the first intake duct 810. The delivered organometallic gas is separated from the hydride gas delivered by the second intake conduit 820 to the second intake port 840. On the bottom surface of the shower head, within the edge region of the pole (?), each of the first air inlets 830 is surrounded by a plurality of (eg, four) uniformly distributed second air inlets 840 and with the plurality of second air intakes Ports 840 are equally spaced, and each of the same second inlets 840 is also surrounded by a plurality of uniformly distributed first inlets 830 and equidistant from the plurality of first inlets.

The ends of the respective intake ports are located at one end of the bottom surface of the shower head 800, and the head ends of the respective intake ports are one end of the sprinkler head 800 that communicates with the corresponding gas passage. In this example, the outer diameter of the tip of the first intake duct 810 is smaller than the inner diameter of the end of the first intake port 830 surrounding the outer side thereof, and both are smaller than the end diameter of the second intake port 840. If the outer diameter of the distal end of the second intake duct 820 is smaller than the inner diameter of the first end of the second intake port 840, the carrier gas transported by the second intake port 840 may surround the hydride gas transported by the second intake duct 820. And the two are mixed together in the second air inlet 840 and then sent to the reaction chamber 900; if the outer diameter of the second intake duct 820 is equal to the inner diameter of the first end of the second air inlet 840 (ie, the two are tight In the case of the cooperation, the mixed gas of the hydride gas and the carrier gas transported by the second intake duct 820 can be directly sent to the reaction chamber 900 via the second intake port 840.

In order to reduce the accumulation of parasitic particles on the bottom surface of the shower head 800, the diameter of the end of each air inlet can be enlarged (for example, the second air inlet 840 and/or the first air intake are enlarged) while taking into account the flow of each gas. Port 830), the area of the bottom surface of the shower head 800 is opened as an air inlet. Therefore, the parasitic particles are not easily attached due to the gas flow at the air inlet of the bottom surface of the shower head 800. The area of the bottom surface of the shower head 800 except the air inlet is reduced, and the influence of the parasitic particle adhesion can be effectively reduced. Referring to Figure 6, in a preferred example, the second air inlet 840 is designed to have a funnel shape with an end aperture greater than its first port diameter. The first intake duct 810, the second intake duct 820, and the first intake port 830 may have a straight cylindrical shape with the same initial diameter.

As shown in FIG. 6 and FIG. 7, the showerhead 800 is internally provided with a first partition 851, a second partition 852, a third partition 853 and a cooling plate 854 which are spaced apart in the vertical direction. In this example, the first partition 851 is closest to the top of the showerhead 800, and the cooling plate 854 is closest to the bottom of the showerhead 800. The first intake port 830, the second intake duct 820, and the second intake port 840, the first intake port 830, are directly opened on the cooling plate 854; the intake ports are also avoided in the cooling plate 854. The location of the mouth is provided with a laterally distributed cooling medium conduit 850 which allows the cooling medium to circulate in the conduit 850 to control the temperature of the showerhead 800 to a suitable range. A third gas passage formed between the cooling plate 854 and the third partition 853 directly communicates with the first intake port 830 and the second intake port 840 on the cooling plate 854 to transport the carrier gas. a second gas passage formed between the third partition 853 and the second partition 852 is connected to the second duct 821 as the second intake duct 820, the second intake duct 820 to transport the hydride gas; the second duct The 821 passes through the third gas passage and is non-conducting with the third gas passage, after which the end of the second conduit 821 is inserted into the second intake port 840 on the cooling plate 854. a first gas passage formed between the second partition 852 and the first partition 851, conveying the organometallic gas via the first conduit 811; the first conduit 811 passing through the second gas passage, the third partition 853, and the third The gas passage is not electrically connected thereto, and the first conduit 811 is finally inserted into the first intake port 830 as the first intake duct 810. Preferably, the end position of the first intake port 830 is lower than the end position of the first intake duct 810 (the first duct 811), that is, the end of the first intake port 830 corresponds to the bottom surface of the cooling plate 854. The end of the first duct 811 has not yet reached the bottom surface of the cooling plate 854, so that a mixed region of the carrier gas and the organometallic gas is formed at the bottom in the first intake port 830.

As shown in FIGS. 8 and 9, in the second embodiment of the shower head 800, the difference from the first embodiment described above is that each of the second ducts 821 on the cooling plate 854 is not directly inserted into the second. In the air inlet 840, there is a slight offset. For example, a buffer zone 855 is disposed near the first end of the second air inlet 840. In this example, the buffer zone 855 is stepped, and the second conduit 821 delivers hydride gas to the buffer zone 855 to reduce the impact effect. ). At the same time, the first gas inlet 830 third gas passage also connects one carrier gas to the buffer zone 855 of the present example, so that the carrier gas and the second conduit 821 transport the hydride gas at the buffer zone 855 or at the second air inlet. The 840 is mixed and outputted by the second intake port 840 together.

As shown in Fig. 10, in the third embodiment of the shower head 800, the difference from the first embodiment described above is that another second duct 822 is provided. The top end of the second duct 822 of the present example communicates with the second gas passage, and the bottom end of the second duct 822 is closed. After the bottom end of the second duct 822 is inserted into the second air inlet 840, A plurality of openings are formed in the sidewalls of the second conduit 822 to deliver hydride gas to reduce impact effects.

In the cooling plate 854 used in the above first to third embodiments, the second intake port 840 and the second intake duct 820 are tapered funnel structures having a constant angle. This angle refers to the angle between the side wall of the tapered funnel structure and the vertical direction.

As shown in FIGS. 17 and 18, in another exemplary cooling plate 854, the second intake port 840 is a double-cone funnel structure 860, that is, the upper segment 861 and the lower segment 862 are respectively angled constant. Conical funnel structure, and the angle of the lower section 862 is greater than the angle of the upper section 861, and the diameter of the end of the lower section 862 is larger than the diameter of the end of the upper section 861; the lower section 862 means that the second intake port 840 is closer to the cooling plate of the second intake duct 820 The portion of the bottom surface of the 854, the end diameter of the lower portion 862 is the end diameter of the second intake port 820 of the second air inlet 840; the upper portion 861 is the portion closer to the top surface of the cooling plate 854, located inside the cooling plate 854. This example can ensure the mechanical strength after the second air inlet 840 of the cooling plate 854 is opened, and can also effectively enlarge the area of the bottom surface of the cooling plate 854 as an air inlet to reduce the area where the parasitic particles may be adsorbed. Area.

As shown in FIG. 11 and FIG. 12, in an exemplary cooling plate 854, in order to enlarge the area of the bottom surface of the cooling plate 854 as the intake port, the second intake port 840 is designed as a polyhedral funnel. The structure 823, that is, the second air inlet 840, is similar to a petal shape, and has a plurality of ribs on its side wall, and the end edges are polygonal (the second air inlet 840 is shown in the above two examples) The inner wall of the two intake ducts 820 has a smooth transition and the end edges are rounded. Further shown in FIG. 13 is a second inlet 840. The second intake conduit 820 is a cooling plate 854 of the polyhedral funnel structure 823, in combination with a second conduit 822 having a bottom closed, side wall open gas.

As shown in FIG. 14, FIG. 15, and FIG. 16, in a specific application (for example, the second intake port 840 and the second intake duct 820 are tapered funnel structures), the cooling plate 854 of the shower head 800 has a thickness of 20 mm. , a diameter of 460mm. Any two second intake ports 840 in the A-A' direction, the distance between the center of the second intake duct 820 and the center of the circle is 28.3 mm, and any two of the second intake ports 840 in the BB' direction are second. The distance D between the center of the air duct 820 and the center of the circle is 20 mm. Each of the four second intake ports 840 encloses a first intake port 830 therein such that the first intake port 830 is located at the second intake port 840 of the second intake duct 820 At the diagonal intersection, the closest distance between the edges of the second intake duct 820 adjacent to the second intake port 840 is G _-1 , the edge of the first intake port 830 to any one of the second intake ports 840 The closest distance of the edge of the two intake ducts 820 is G _-2 .

As shown in FIG. 19, the square center of the four second air inlets 840 and the second air intake duct 820 are defined as a unit area, and the side length of the unit area is the distance D and the area. S1=D ² . The second intake port 840 has a second intake port 820 having an end diameter of O _d-1 , and the second intake port 840 has a first port diameter of the second intake duct 820 of O _{d - 5} . Provided the first intake port 830 is the end diameter O _d-2, the outer diameter of the first conduit 811 inserted therein is O _d-3, i.e., the inner diameter of the first conduit 811 is a first intake conduit tip diameter 810 Is O _d-4 . Set the area of a work area to The ratio S2/S1 of the area of the work area to the unit area, and some examples of the above several parameters are listed in Table 1 and Table 2. 【Table 1】 【Table 2】

As shown in FIGS. 17, 18, and 20, in another specific application (eg, the second intake port 840, the second intake conduit 820 is a double-cone funnel structure 860), the thickness of the cooling plate 854 is T; with the surface of the cooling plate 854 from the area T _-3 is straight cylindrical, diameter (i.e., a second intake port 840 of the second inlet conduit 820 of the head end diameter) of O _d-5; after the thickness T _-2 The area is the upper stage, the angle of the side wall of the upper section 861 and the vertical direction is θ, the end diameter of the upper section 861 is O _{d -x} ; the area of the bottom surface distance T _-1 from the cooling plate 854 is the lower section 862, and the side wall and the vertical section of the lower section 862 The angle in the straight direction is 2θ, and the end diameter of the lower segment 862 is O _d-1 . Each parameter has the following relationship: ; .

The cooling medium pipe 850 is laterally opened in the cooling plate 854 between the second intake port 820 and the first intake port 830, and the center of each cooling medium pipe 850 is adjacent to the adjacent second air inlet. 840 The distance between the central axis of the second intake duct 820 or the first intake port 830 is 7.07 mm; the distance between the center of each cooling medium duct 850 and the top surface of the cooling plate 854 is T _-4 . Some examples of several of the above parameters are listed in Tables 3 and 4. 【table 3】 【Table 4】

As shown in FIG. 4, the shower head 800 provided in each of the above examples is located at the top of the reaction chamber 900 of the MOCVD apparatus; the bottom of the reaction chamber 900 is provided with a pedestal 910 for carrying the substrate 920, which can be wound around the center. The shaft is rotated; a heater 930 of the substrate 920 is further disposed under the base 910; the temperature of the substrate on the base 910 can be raised to a suitable temperature for growing the crystal by a heater, typically greater than 600 ° C or even greater than 1000 °C. The MOCVD apparatus is further provided with an air suction device that discharges the reacted exhaust gas out of the reaction chamber for processing or reuse.

Commonly used for the substrate are: gallium phosphide (GaP), indium phosphide (InP), bismuth (Si), tantalum carbide (SiC), sapphire (Al ₂ O ₃ ), and the like. Generally, a III-V compound semiconductor thin film is grown, wherein an organometallic gas for supplying a group III element is supplied through a first gas inlet, and commonly used are: trimethylgallium (TMGa), trimethylaluminum. (TMAl), trimethylindium (TMIn), and the like. Conveying through the second intake port for providing a source of a group V element hydride gases, commonly used ammonia (NH _3), arsine (AsH _3), phosphine (PH _3), and disilane (Si ₂ H ₆ ) and so on. It is also possible to mix, in the gas to be input, methanthan (SiH ₄ ) as an n-type dopant source, or ferrocene (CP ₂ Mg) as a p-type dopant source, and the like. The carrier gas delivered through the first and second intake ports is commonly used: hydrogen (H ₂ ), nitrogen (N ₂ ), and the like.

Alternatively, in another application structure, the mixed gas of the organometallic gas and the carrier gas is transported through the first intake duct, and the mixed gas of the organometallic gas and the hydride gas is transported through the second intake duct. The first gas inlet conveys and forms a curtain-like gas flow, and the isolation gas for separating the first two channels of gas can use not only a carrier gas but also a purge gas such as Ar or He, or A mixture of purge gas and carrier gas, or other auxiliary gas that effectively separates the organometallic gas from the hydride gas without affecting the process in the reaction chamber.

As shown in Fig. 21, trimethylgallium TMGa is taken as an example to analyze the chemical reaction process in the reaction chamber. In the reaction chamber near the inlet (about 100 ° C), TMGa is rapidly depleted by reaction with NH ₃ to become an adduct; as the gas is sprayed downward, the adduct is heated (at about 500 ° C) It is re-decomposed to increase the concentration of TMGa; furthermore, at the substrate closer to high temperature (when the temperature is above 900K), TMGa is almost completely pyrolyzed into monomethyl gallium MMGa, which is mainly used as the Ga atom in the growth of GaN film. source. The gas on the surface of the substrate forms a boundary layer having a thickness δ having a preferred value δ ₀ , such as δ ₀ = 10 mm, δ ₀ generally associated with species diffusion of metal organic gases, temperature gradients, gas flow rates, and the like. It is generally desirable that the thickness δ of the boundary layer can be less than the preferred value δ ₀ to ensure a high film growth rate; otherwise the film growth rate will decrease and the generated parasitic particles will increase.

In the existing turbo disk type MOCVD equipment, more reaction gas is consumed, the gas flow rate is high, and the base of the carrier substrate must be rotated at a high speed (>1000 rpm) to reduce the thickness δ of the boundary layer, and The gas can be evenly distributed on the substrate. According to the present invention, in the turbine type MOCVD apparatus, after the shower heads described in the above embodiments are used, it is possible to ensure a high film growth rate and a uniform gas distribution state without rotating the susceptor at a high speed.

Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those skilled in the art. Therefore, the scope of the invention should be limited by the scope of the appended claims.

800‧‧‧Sprinkler
810‧‧‧First intake duct
811‧‧‧First catheter
820‧‧‧Second intake duct
821, 822‧‧‧ second catheter
823‧‧‧Multifaceted funnel structure
830‧‧‧First air inlet
840‧‧‧second air inlet
850‧‧‧Cooling medium pipeline
851‧‧‧ first partition
852‧‧‧Second partition
853‧‧‧ third partition
854‧‧‧Cooling plate
855‧‧‧buffer
860‧‧‧Double cone funnel structure
861‧‧‧上段
862‧‧‧ lower section
900‧‧‧Reaction chamber
910‧‧‧Base
920‧‧‧ substrates
930‧‧‧heater
O _d-1 , O _d-2 , O _d-4 , O _{d -x} ‧‧‧ end caliber
The outer diameter O _d-3 ‧‧‧
O _d-5 ‧‧‧first port diameter
T, T _-2 ‧‧‧ thickness
T _-1 , T _-3 , T _-4 ‧‧‧ Distance θ‧‧‧ Angle δ ₀ ‧‧‧ Thickness

1 , 2 and 3 are a side view and a plan view of a gas distribution effect of a first air intake device of the present invention; FIG. 4 is a schematic structural view of an MOCVD apparatus provided with the air intake and cooling device of the present invention; FIG. 6 and FIG. 7 are cross-sectional views of the apparatus of the present invention in the A-A' direction and the BB' direction in the first embodiment; FIG. Figure 9 is a cross-sectional view of the apparatus of the present invention taken along the line C-C' and BB' in the second embodiment; Figure 10 is a BB' direction of the apparatus of the present invention in the third embodiment. 1 is a schematic view showing a structure of a polyhedral funnel of a cooling plate in the apparatus of the present invention; FIG. 12 is a cross-sectional view of an example of the structure of the polyhedral funnel shown in FIG. 11 taken along line A-A'; It is a cross-sectional view taken along line BB' of another example of the polyhedral funnel structure shown in FIG. Figure 14 is a schematic view showing the distribution of the air inlet on the cooling plate of the device of the present invention; Figure 15 and Figure 16 are the cooling plate along the A-A' direction and B- when the second air inlet is a tapered funnel structure in the present invention. Figure 17 and Figure 18 are schematic views of the cooling plate along the A-A' direction and the BB' direction when the second air inlet is a double-cone funnel structure in the present invention; Figure 19 is a view of the present invention. FIG. 20 is a schematic view showing the size of a specific example of the distribution of the intake port on the cooling plate; FIG. 20 is a schematic view showing a specific example of the case where the second intake port is a double-cone funnel structure in the present invention; Schematic diagram of the chemical reaction process;

810‧‧‧First intake duct

811‧‧‧First catheter

820‧‧‧Second intake duct

821‧‧‧second catheter

830‧‧‧First air inlet

840‧‧‧second air inlet

851‧‧‧ first partition

852‧‧‧Second partition

853‧‧‧ third partition

854‧‧‧Cooling plate

Claims (10)

An intake and cooling device for an MOCVD apparatus, comprising a showerhead located at the top of the reaction chamber, comprising: a plurality of mutually separated reaction gas diffusion chambers, the plurality of reaction gas diffusion chambers comprising a plurality of separators Wherein the bottom baffle is provided with a plurality of sets of gas conduits through which a reaction gas is introduced into the reaction chamber, the plurality of sets of gas conduits comprising: a set of first intake ducts for transporting organic metals into the reaction chamber of the MOCVD apparatus a second intake duct for transporting a hydride gas; the organometallic gas and the hydride gas are carried by the shower gas carried by the shower head to the surface of the substrate at the bottom of the reaction chamber for a thin film deposition reaction; The plurality of reaction gas diffusion chambers further include a cooling plate, and the reaction gas diffusion chamber is disposed between the partition plate at the bottom and the cooling plate to form an isolation gas diffusion chamber, and the cooling plate comprises: a set of first air intake a port for conveying an isolation gas into the reaction chamber; each of the first intake ducts is respectively disposed in a corresponding one of the first intake ports to make the first intake air a curtain-like airflow formed by the transporting isolation gas surrounds the periphery of the organometallic gas, separating the freshly ejected organometallic gas from the hydride gas; and a set of second air inlets each having a lower port diameter greater than an upper port diameter a funnel shape; the lower end openings of the first air inlet and the second air inlet are spaced apart from each other and alternately arranged on a bottom surface of the cooling plate; each of the second air inlets and a second one corresponding thereto The gas conduit is in communication, and the gas obtained by mixing the hydride gas and the carrier gas is transported into the reaction chamber through the second intake port. An intake and cooling device for an MOCVD apparatus according to claim 1, wherein the first intake duct separately transports an organometallic gas or a mixed gas of an organometallic gas and a carrier gas; The gas conduit separately transports the hydride gas or a mixed gas of the hydride gas and the carrier gas; the isolation gas delivered by the first inlet is a carrier gas or a purge gas or a mixed gas thereof. An intake and cooling device for an MOCVD apparatus according to claim 1, wherein a plurality of partitions of the plurality of mutually separated reactive gas diffusion chambers include a first separator, a second partition plate and a third partition plate; an isolation gas diffusion chamber formed between the cooling plate and the third partition plate is connected to the first air inlet and the second air inlet opening formed on the cooling plate; a second reaction gas diffusion chamber formed between the third partition and the second partition is connected to the second intake duct, and the second duct is inserted into the corresponding second intake port to make the second intake port The upper end surrounds the periphery of the lower end of the second duct; the first reactive gas diffusion chamber formed between the second partition and the first partition communicates with the first intake duct, and the first intake duct is interspersed in the corresponding In the first air inlet. An air intake and cooling device for an MOCVD apparatus according to claim 3, wherein the cooling plate of the shower head is provided with a position for avoiding each of the air inlets and the gas passages communicating therewith. A pipe through which the cooling medium circulates. An intake and cooling device for an MOCVD apparatus according to claim 3, wherein a sidewall of the second intake port is provided with a buffer zone, and the second intake conduit is connected to the second reaction gas diffusion cavity The reaction gas is introduced into the buffer zone, and the reaction gas passes through the buffer zone and flows into the second air inlet. An intake and cooling device for an MOCVD apparatus according to claim 3, wherein a closed bottom end of the second conduit is inserted into the first air inlet, and a plurality of openings are formed in the second conduit side wall. Used to transport the reaction gas. An intake and cooling device for an MOCVD apparatus according to claim 1, wherein a lower end position of the first intake port is lower than a lower end position of the first intake duct disposed therein. An intake and cooling device for an MOCVD apparatus according to claim 1 or 3, wherein the second air inlet is a tapered funnel structure having a constant angle between the side wall and the vertical direction. The intake and cooling device for an MOCVD apparatus according to claim 1 or 3, wherein the second air inlet is a double-cone funnel structure, and includes an angle between the side wall and the vertical direction. The upper segment of the angle, and the lower portion of the second angle of the sidewall and the vertical direction, the first angle being smaller than the second angle. An intake and cooling device for an MOCVD apparatus according to claim 1 or 3, wherein the second air inlet is a polyhedral funnel structure, and an end edge of the second air inlet is a polygon The side wall is provided with a plurality of ribs.