CN105200395A - Gas inflowing and cooling device for MOCVD equipment - Google Patents
Gas inflowing and cooling device for MOCVD equipment Download PDFInfo
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- CN105200395A CN105200395A CN201410272606.0A CN201410272606A CN105200395A CN 105200395 A CN105200395 A CN 105200395A CN 201410272606 A CN201410272606 A CN 201410272606A CN 105200395 A CN105200395 A CN 105200395A
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Abstract
The invention discloses a gas inflowing and cooling device for MOCVD equipment. The gas inflowing and cooling device is provided with spray heads located at the top of the interior of a reaction chamber, gas inflowing guide pipes for organic metal gas are arranged in gas inlets for isolation gas in a penetrating mode, the isolation gas can form curtain-shaped gas flow and surround the periphery of the organic metal gas, and therefore the organic metal gas which is sprayed just now and hydride gas can be isolated and prevented from untimely reacting to generate parasitic particles. In addition, the parasitic particles can be prevented from being formed nearby the gas inlets formed in the bottom face of the gas inflowing device, therefore, the conveyed organic metal gas and the hydride gas can be evenly distributed on a base and all substrates, the thin film growth quality is guaranteed, and the thin film growth rate is improved.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, particularly a kind of air inlet for MOCVD device and refrigerating unit.
Background technology
At present, at Metalorganic Chemical Vapor Deposition (hereinafter referred to as MOCVD), by II or the metal-organic gas of III, introduce in the reaction chamber of MOCVD device with the hydride gas containing IV or V group element, when both mixed gass being delivered to be positioned over the substrate surface on reaction chamber inner bottom part pedestal, can at substrate surface generation pyrolysis, thus epitaxy forms compound monocrystal film.
As shown in Figure 1 and Figure 2, in a kind of diffuser that US2010/0143588A1 provides, be provided with the gas distribution grid being positioned at reaction chamber inner top, it comprises multiple extending in parallel and alternatively distributed elongate tubular gas distribution elements first gas distribution elements, the second gas distribution elements.First reaction source gas is V race hydride (ammonia NH
3) and carrier gas (hydrogen H
2or nitrogen N
2) mixed gas, carried by the long strip type inlet mouth of the first gas distribution elements, formed long strip shape, curtain shape the first reactant gases air-flow.Second reaction source gas is the mixed gas of organic metal gas (MO, Metal-Organic) and carrier gas, and organic metal gas is such as trimethyl-gallium (i.e. (CH
3)
3ga, be called for short TMG or TMGa), trimethyl aluminium (i.e. [(CH
3)
3al]
2, be called for short TMA or TMAl) etc., by one group of air inlet port conveying of the second gas distribution elements, the row's of being formed shape second reactant gases air-flow.Meanwhile, the gap conveying between the first gas distribution elements also having a road carrier gas to be distributed by adjacent gas and the second gas distribution elements, the curtain shape air-flow forming interval interts between the air-flow and the air-flow of the second reactant gases of aforementioned first reactant gases.
As shown in Figure 1, Figure 2, Figure 3 shows, above-mentioned diffuser has following shortcoming: at the edge of this diffuser, and different positions circumferentially has different gas and vapor permeation states and gas flow, easily forms eddy current; And, the distributed areas spraying latter two reaction source gas from diffuser are alternatively distributed long strip types, non-centrosymmetry, make in substrates of different or on the different positions of same substrate, the particularly skewness of two kinds of reaction source gas between central zone and fringe region, cause the film of final formation of deposits uneven, affect quality product.In addition; be difficult in this diffuser avoid two kinds of reaction source gas premature reaction before arriving substrate surface to form the problem of the parasitic particle of GaN, AlN; parasitic particle can be attached to reaction chamber internal contamination equipment; drop at random on substrate and affect film growth form; a part of organic metal gas is expended in the process growing parasitic particle, causes film growth rate to decline.
US2009/0169744A1 provides in an embodiment of diffuser, diffuser comprises for the hydride gas of conveying in mixing and the first gas diffusion chamber of carrier gas, comprise the first gas duct bottom diffusion chamber, be used for carrying organic metal gas and the carrier gas second gas diffusion chamber of mixing, the second gas duct is comprised bottom diffusion chamber, both gas duct arrangements are in column, also comprise for conveying sweeping gas (such as Ar, N
2, He etc.) the 3rd gas diffusion chamber, multiple opening is comprised on bottom diffusion chamber, these opening arrays become a line and are arranged between the first air-intake duct and the second air-intake duct, for isolating below two kinds of reactant gasess the 3rd gas diffusion chamber, a cooling jacket can also be installed, refrigerant is flowed in cooling jacket, makes the temperature of diffuser remain on proper level.
But, for above-mentioned first embodiment, this diffuser not only complex structure, and the bottom surface of this diffuser is plane, this plane has a lot of region do not have gas to flow through, easily form eddy current and upset parasitic particle, the bottom surface causing parasitic particle to be attached to diffuser is difficult to remove.Further, the outlet of the 3rd gas diffusion chamber lower surface away from the outgoing position of two kinds of reaction source gas, thus via the sweeping gas of outlet conveying be difficult to play separate two kinds of reaction source gas maybe will the effect of the parasitic particle removal of attachment.
Summary of the invention
The object of this invention is to provide a kind of air inlet for MOCVD device and refrigerating unit, organic metal gas and hydride gas are separated, both suppression premature reaction produces parasitic particle; Parasitic particle is prevented to be formed near the inlet mouth of diffuser bottom surface; The organic metal gas of conveying and hydride gas can both be uniformly distributed on pedestal and on each substrate.
In order to achieve the above object, technical scheme of the present invention is to provide a kind of air inlet for MOCVD device and refrigerating unit, is provided with the spray header being positioned at reaction chamber inner top, wherein comprises:
The reactant gases diffusion chamber of multiple mutual isolation, described multiple reactant gases diffusion chamber comprises polylith dividing plate, wherein bottom baffles is provided with and organizes gas duct more, pass into reactant gases by conduit to reaction chamber, and described many group gas ducts comprise:
One group of first air-intake duct, is used for carrying organic metal gas in the reaction chamber of MOCVD device;
One group of second air-intake duct, is used for carrying hydride gas; The substrate surface that described organic metal gas and hydride gas are carried into reaction chamber inner bottom part by the carrier gas of this showerhead delivery carries out thin film deposition reaction;
Also comprise one piece of cooling plate below multiple described reactant gases diffusion chamber, described reactant gases diffusion chamber comprises the separation gas diffusion chamber between bottom baffles and cooling plate, and described cooling plate comprises:
One group of first inlet mouth, is used for carrying separation gas in described reaction chamber; Each described first air-intake duct is located among first inlet mouth corresponding respectively, the heavy curtain shape air ring that the separation gas of the first inlet mouth conveying is formed is peripheral around organic metal gas, the organic metal gas just sprayed and hydride gas is separated; And,
One group of second inlet mouth, separately for lower end bore is greater than the funnel-form of upper end bore;
The lower ending opening of described first inlet mouth and the second inlet mouth, spaced and be alternately distributed in the bottom surface of cooling plate; Each described second inlet mouth is communicated with second air-intake duct corresponded, and hydride gas and the mixed gas of carrier gas is carried in described reaction chamber by described second inlet mouth.
Alternatively, described first air-intake duct carries organic metal gas separately, or the mixed gas of conveying organic metal gas and carrier gas;
Described second air-intake duct carries hydride gas separately, or the mixed gas of conveying hydride gas and carrier gas;
The separation gas of described first inlet mouth conveying is carrier gas or sweeping gas or its mixed gas.
Alternatively, inner at described spray header, the polylith dividing plate of the reactant gases diffusion chamber of multiple mutual isolation includes the first dividing plate, second partition, the 3rd dividing plate;
The separation gas diffusion chamber formed between described cooling plate and the 3rd dividing plate, is communicated to described first inlet mouth and the second inlet mouth offered on the cooling plate;
Described 3rd the second reactant gases diffusion chamber formed between dividing plate and second partition is communicated to the second air-intake duct, described second air-intake duct is inserted in the second corresponding inlet mouth, makes the upper end of the second inlet mouth be centered around the periphery of the lower end of the second air-intake duct;
The the first reactant gases diffusion chamber formed between described second partition and the first dividing plate is communicated to the first air-intake duct, and described first air-intake duct interts in the first inlet mouth of correspondence.
Alternatively, in the cooling plate of described spray header, the position of each gas passage avoided each inlet mouth and be communicated with it, is provided with for the logical pipeline of cooling medium flow.
Alternatively, the sidewall of described second inlet mouth is provided with buffer zone, and described second air-intake duct is communicated with described second reactant gases diffusion chamber and reactant gases is passed into described buffer zone, and reactant gases flows into the second inlet mouth behind buffer zone.
Alternatively, the bottom closed of described second air-intake duct is inserted in the second inlet mouth, this second air-intake duct sidewall offers some perforates and is used for transport of reactant gases body.
Alternatively, the lower end position of described first inlet mouth is lower than the lower end position of the first air-intake duct be located in wherein.
Alternatively, described second inlet mouth is the constant conical hopper structure of sidewall and vertical direction angle.
Alternatively, described second inlet mouth is biconical funnel structure, comprises the epimere that sidewall and vertical direction angle are the first angle, and sidewall and vertical direction angle are the hypomere of the second angle, and the first angle is less than the second angle.
Alternatively, described second inlet mouth is polyhedron funnel structure, and the end side of described second inlet mouth is Polygons, and sidewall is provided with many ribs.
Compared with prior art, the air inlet for MOCVD device provided by the invention and refrigerating unit, its advantage is:
Gas passage is formed by dividing plate spaced in spray header in the present invention; Some inlet mouths are directly offered on the cooling plate, and makes cooling medium pass lateral arrangement betwixt, to reduce the volume of whole equipment; Each inlet mouth is uniformly distributed, and effectively to improve on pedestal and the homogeneity of gas distribution on each substrate, thus ensures film growth quality, promote film growth rate.
In the present invention, the air-intake duct of organic metal gas is located in the inlet mouth of separation gas, separation gas is enable to form the air-flow of heavy curtain shape and be looped around organic metal gas periphery, thus the organic metal gas just sprayed and hydride gas are separated, both suppression premature reaction produces parasitic particle.
By expanding the end bore of some of them inlet mouth in the present invention, such as form funnel-form, increase the area that showerhead bottom surface is set to inlet mouth, utilize the air-flow of inlet mouth to blow away parasitic particle, simultaneously effectively the parasitic particle of reduction showerhead bottom surface can the area in adsorbable region.
By biconical funnel structure that sidewall some of them inlet mouth being designed to two sections is different from vertical direction angle in the preferred embodiments of the present invention, make the angle of the hypomere near cooling plate bottom surface larger, to ensure the physical strength offered in cooling plate after inlet mouth and cooling medium pass simultaneously, and effectively reduce parasitic particle can the area in adsorbable region.
Accompanying drawing explanation
Fig. 1, Fig. 2 and Fig. 3 are side-view and the vertical view of the first diffuser gas distribution effect existing;
Fig. 4 is the structural representation of the MOCVD device arranging air inlet of the present invention and refrigerating unit;
Fig. 5 is the schematic diagram of the inlet mouth distribution of air inlet of the present invention and refrigerating unit;
Fig. 6, Fig. 7 be device of the present invention A-A ' in a first embodiment to and B-B ' to sectional view;
Fig. 8, Fig. 9 be device of the present invention C-C ' in a second embodiment to and B-B ' to sectional view;
Figure 10 be device of the present invention B-B ' in the third embodiment to sectional view;
The schematic diagram of Figure 11 to be the second inlet mouth of cooling plate in device of the present invention be polyhedron funnel structure;
Figure 12 be the funnel structure of polyhedron shown in Figure 11 an example A-A ' to sectional view;
Figure 13 be the funnel structure of polyhedron shown in Figure 11 another example B-B ' to sectional view.
Figure 14 is the inlet mouth distribution schematic diagram on the cooling plate of device of the present invention;
Figure 15, Figure 16 be when in the present invention, the second inlet mouth is conical hopper structure cooling plate along A-A ' to and B-B ' to schematic diagram;
Figure 17, Figure 18 be when in the present invention, the second inlet mouth is biconical funnel structure cooling plate along A-A ' to and B-B ' to schematic diagram;
Figure 19 is the scale diagrams of a concrete example of cooling plate enterprising gas port distribution in the present invention;
Figure 20 is the scale diagrams of concrete example when the second inlet mouth is biconical funnel structure in the present invention;
Figure 21 is the chemical reaction process schematic diagram in the present invention in reaction chamber;
Embodiment
As shown in Figure 4, diffuser provided by the invention is a kind of spray header 800, it is arranged on the top in MOCVD (metal organic chemical vapor deposition) device reaction cavity 900, by the first air-intake duct 810 arranged, second air-intake duct 820, first inlet mouth 830, respectively to conveying organic metal gas in reaction chamber 900, hydride gas, with the carrier gas both being carried into substrate 920 surface and carrying out thin film deposition reaction, organic metal gas and hydride gas are spaced from each other by the carrier gas simultaneously also by being carried by the first inlet mouth 830, near the inlet mouth of spray header 800 bottom surface, parasitic particle is produced to prevent the too early reaction of the organic metal gas of just ejection and hydride gas.
As shown in Figure 5, be also provided with one group of second inlet mouth 840, the respective opening of itself and one group of first inlet mouth 830 at interval, spray header 800 bottom surface alternately, be uniformly distributed.Each second air-intake duct 820 is communicated to corresponding with it second inlet mouth 840, make the head end of the second inlet mouth 840 be centered around the end periphery of the second air-intake duct 820, by the second inlet mouth 840 by the mixed gas delivery of hydride gas and carrier gas to reaction chamber 900.Each first air-intake duct 810 is located in corresponding with it first inlet mouth 830, the carrier gas of then being carried by the first inlet mouth 830 forms the air-flow of heavy curtain shape, the organic metal gas carried and the hydride gas carried by the second air-intake duct 820 to the second inlet mouth 840 is separated by the first air-intake duct 810.In showerhead bottom surface, within the fringe region of pole, each first inlet mouth 830 by multiple (as 4) equally distributed second inlet mouth 840 around and with the plurality of second inlet mouth 840 apart from equal, each same second inlet mouth 840 also by multiple be uniformly distributed the first inlet mouth 830 around and with the plurality of first inlet mouth 830 apart from equal.
If the end of each inlet mouth is the one end being positioned at spray header 800 bottom surface, and the head end of each inlet mouth is positioned at one end that spray header 800 is communicated to corresponding gas passage.The end external diameter of the first air-intake duct 810 in this example, is less than the end internal diameter of the first inlet mouth 830 be looped around outside it, and is both less than the end bore of the second inlet mouth 840.If when the end external diameter of the second air-intake duct 820 is less than the head end internal diameter of the second inlet mouth 840, it is outer and be delivered to reaction chamber 900 together after both being mixed in the second inlet mouth 840 that the carrier gas that the second inlet mouth 840 can be made to carry is enclosed in hydride gas that the second air-intake duct 820 carries; If when the end external diameter of the second air-intake duct 820 equals head end internal diameter (namely both closely cooperate) of the second inlet mouth 840, the hydride gas that the second air-intake duct 820 can be made to carry and the mixed gas of carrier gas are directly carried to reaction chamber 900 via the second inlet mouth 840.
And in order to reduce parasitic particle gathering in spray header 800 bottom surface, under the prerequisite taking into account each road gas flow, by expanding the bore (such as expanding the second inlet mouth 840 and/or the first inlet mouth 830) of each inlet end, spray header 800 bottom surface area as much as possible can be offered as inlet mouth.Thus, at the inlet mouth place of spray header 800 bottom surface owing to there being gas flow, parasitic particle is not easy attachment; And spray header 800 bottom surface other areas except inlet mouth are reduced, the impact of parasitic particle attachment effectively can be reduced.Shown in Figure 6, in preferred example, the second inlet mouth 840 is designed to the funnel-form that end bore is greater than its head end bore.First air-intake duct 810, second air-intake duct 820, first inlet mouth 830 can headed by the consistent straight-tube shape of end bore.
As shown in Figure 6, Figure 7, described spray header 800 inside is provided with the first dividing plate 851, second partition 852, the 3rd dividing plate 853 and cooling plate 854, and these plates are spaced apart at vertical direction.In this example, the first dividing plate 851 is near the top of spray header 800, and cooling plate 854 is near the bottom of spray header 800.Cooling plate 854 is directly offered the first described inlet mouth 830 and the second inlet mouth 840; The position also avoiding each inlet mouth in described cooling plate 854 is provided with the heat-eliminating medium pipeline 850 of lateral distribution, heat-eliminating medium is circulated in pipeline 850, controls the temperature of spray header 800 in suitable scope.The 3rd gas passage formed between cooling plate 854 and the 3rd dividing plate 853, the first inlet mouth 830 directly on connection cooling plate 854 and the second inlet mouth 840 are with delivery of carrier gas.The second gas passage formed between 3rd dividing plate 853 and second partition 852, is communicated to the second conduit 821 as the second air-intake duct 820 to carry hydride gas; This second conduit 821 passes the 3rd gas passage and not conducting mutual with the 3rd gas passage, and the end of this second conduit 821 is inserted in the second inlet mouth 840 on cooling plate 854 afterwards.The first gas passage formed between second partition 852 and the first dividing plate 851, carries organic metal gas via the first conduit 811; This first conduit 811 all not conducting with it through the second gas passage, the 3rd dividing plate 853 and the 3rd gas passage, described first conduit 811 is finally inserted in described first inlet mouth 830 as the first air-intake duct 810.Preferably, it is the terminal position making the first inlet mouth 830, lower than the terminal position of the first air-intake duct 810 (the first conduit 811), namely, the bottom surface of the corresponding cooling plate 854 of end of the first inlet mouth 830, and the end of the first conduit 811 does not also reach the bottom surface of cooling plate 854, thus the mixing region of a carrier gas and organic metal gas is formed on the bottom in the first inlet mouth 830.
As shown in Figure 8, Figure 9, in the second embodiment of spray header 800, be with the difference in above-mentioned first embodiment, on cooling plate 854, each second conduit 821 is not directly inserted in the second inlet mouth 840, but slightly offsets.Such as, be provided with a buffer zone 855 near the head end of the second inlet mouth 840, in this example, this buffer zone 855 is step-like, and the second conduit 821 carries hydride gas to buffer zone 855, to reduce shock effect (impingingeffect).First inlet mouth 830 the 3rd gas passage Ye Jiang mono-tunnel carrier gas is simultaneously communicated to the buffer zone 855 of this example, and the hydride gas of carrier gas and the conveying of the second conduit 821 is together exported by the second inlet mouth 840 after mixing at buffer zone 855 place or in the second inlet mouth 840.
As shown in Figure 10, in the 3rd embodiment of spray header 800, be with the difference in above-mentioned first embodiment, provide another kind of second conduit 822.The top of the second conduit 822 described in this example is communicated with the second gas passage, and the bottom of this second conduit 822 is closed, after described second conduit 822 bottom is inserted in the second inlet mouth 840, hydride gas is carried, to reduce shock effect by the some perforates be opened on this second conduit 822 sidewall.
In cooling plate 854 used in above-mentioned the first to the three embodiment, the second inlet mouth 840 is conical hopper structures that angle is constant.This angle refers to the sidewall of conical hopper structure and the angle of vertical direction.
As shown in Figure 17, Figure 18, in the cooling plate 854 of another example, second inlet mouth 840 is biconical funnel structures 860, namely, epimere 861 and hypomere 862 are respectively the constant conical hopper structure of angle, and the angle of hypomere 862 is greater than the angle of epimere 861, and the bore of hypomere 862 end is greater than the bore of epimere 861 end; Hypomere 862 refers to the part of this second inlet mouth 840 closer to cooling plate 854 bottom surface, and the end bore of hypomere 862 is exactly the end bore of this second inlet mouth 840; Epimere 861 is the part closer to cooling plate 854 end face, is positioned at cooling plate 854 inner.While this example ensures physical strength after cooling plate 854 offers the second inlet mouth 840, effectively can also expand cooling plate 854 bottom surface and offer area into inlet mouth, can the area in adsorbable region to reduce parasitic particle.
As shown in Figure 11, Figure 12, also have in the cooling plate 854 of an example, area into inlet mouth is offered in order to expand cooling plate 854 bottom surface, second inlet mouth 840 is designed to polyhedron funnel structure 823, that is, the similar petal-shaped of the second inlet mouth 840, is provided with many ribs at its sidewall, end side is Polygons (and inner wall smooth transition in the second inlet mouth 840 shown in above-mentioned two examples, end side is circular).The cooling plate 854 that the second inlet mouth 840 is polyhedron funnel structure 823 is further illustrated, a kind of example combined with the second conduit 822 of bottom end closure, side-wall hole gas transmission in Figure 13.
As shown in Figure 14, Figure 15, Figure 16, in a concrete application (such as the second inlet mouth 840 is conical hopper structure), the cooling plate 854 of spray header 800 is the circle of thickness 20mm, diameter 460mm.Spacing between any two second inlet mouth 840 centers of circle to the center of circle, A-A ' direction is 28.3mm, and the space D between any two second inlet mouth 840 centers of circle to the center of circle, B-B ' direction is 20mm.First inlet mouth 830 is enclosed in wherein by every four the second inlet mouths 840, makes this first inlet mouth 830 be positioned at the diagonal lines point of crossing of these the second inlet mouths 840, and the closest range between the edge of adjacent second inlet mouth 840 is G
-1, the edge of the first inlet mouth 830 is G to the closest range at the edge of any one the second inlet mouth 840
-2.
As shown in figure 19, the square region that the home position of these four the second inlet mouths 840 surrounds as corner is set to a cellular zone, then the length of side of this cellular zone is space D, area S1=D
2.If the end bore of the second inlet mouth 840 is O
d-1, the head end bore of the second inlet mouth 840 is O
d-5.If the end bore of the first inlet mouth 830 is O
d-2, the external diameter of the first conduit 811 interted wherein is O
d-3, the internal diameter i.e. end bore of the first air-intake duct 810 of the first conduit 811 is O
d-4.If the area of a working district is
the ratio S2/S1 of the area of working district and cellular zone, lists some examples of above-mentioned some parameters in table 1, table 2.
Table 1 unit mm
| Sequence number | D | S1 | O d-1 | O d-2 | O d-3 | O d-4 | S2 | G -1 | G -2 | S2/S1 |
| 1 | 20.0 | 400.0 | 16.0 | 4.0 | 1.477 | 1.069 | 213.6 | 4.0 | 4.1 | 53.4％ |
| 2 | 20.0 | 400.0 | 15.0 | 4.0 | 1.477 | 1.069 | 189.3 | 5.0 | 4.6 | 47.3％ |
| 3 | 20.0 | 400.0 | 14.0 | 4.0 | 1.477 | 1.069 | 166.5 | 6.0 | 5.1 | 41.6％ |
| 4 | 20.0 | 400.0 | 14.0 | 3.0 | 1.477 | 1.069 | 160.8 | 6.0 | 5.6 | 40.2％ |
| 5 | 20.0 | 400.0 | 13.5 | 3.0 | 1.477 | 1.069 | 150.0 | 6.5 | 5.9 | 37.5％ |
| 6 | 20.0 | 400.0 | 13.0 | 3.5 | 1.477 | 1.069 | 142.4 | 7.0 | 5.9 | 35.6％ |
| 7 | 20.0 | 400.0 | 13.0 | 3.0 | 1.477 | 1.069 | 139.8 | 7.0 | 6.1 | 35.0％ |
| 8 | 20.0 | 400.0 | 12.0 | 5.0 | 1.477 | 1.069 | 132.7 | 8.0 | 5.6 | 33.2％ |
| 9 | 20.0 | 400.0 | 12.0 | 3.0 | 1.477 | 1.069 | 120.2 | 8.0 | 6.6 | 30.0％ |
Table 2 unit mm
| D | S1 | O d-1 | O d-2 | O d-5 | S2 | G -1 | G -2 | S2/S1 |
| 20.0 | 400.0 | 17.00 | 4.00 | 2.00 | 239.5 | 3.00 | 3.60 | 59.9％ |
As shown in Figure 17, Figure 18, Figure 20, in another embody rule (such as the second inlet mouth 840 is biconical funnel structure 860), the thickness of cooling plate 854 is T; Wherein, with this cooling plate 854 end face distance T
-3region be straight-tube shape, bore (i.e. the head end bore of the second inlet mouth 840) is O
d-5; Thickness T afterwards
-2region be epimere, the sidewall of epimere 861 and the angle of vertical direction are θ, and the end bore of epimere 861 is O
d-x; With this cooling plate 854 bottom surface distance T
-1region be hypomere 862, the sidewall of hypomere 862 and the angle of vertical direction are 2 θ, and the end bore of hypomere 862 is O
d-1.Each parameter has following relation:
Heat-eliminating medium pipeline 850 is laterally opened in the cooling plate 854 between the second inlet mouth 840 and the first inlet mouth 830, and the center of circle of each heat-eliminating medium pipeline 850 is 7.07mm to the distance of the central shaft of the second adjacent inlet mouth 840 or the first inlet mouth 830; The center of circle of each heat-eliminating medium pipeline 850 and the distance of cooling plate 854 end face are T
-4.Some examples of above-mentioned some parameters are listed in table 3, table 4.
Table 3 unit: mm
| θ(deg) | O d-1 | O d-2 | O d-5 | O d-3 | O d-6 | T -1 | T -2 | T -3 | T -4 | T |
| 10 | 17.00 | 4.00 | 2.00 | 8.30 | 5.00 | 12.00 | 17.76 | 2.24 | 7.00 | 32.00 |
Table 4 unit: mm
| θ | tanθ | Tan2θ | O d-1 | O d-5 | O d-x | T -1 | T -2 | T -3 | T |
| 10 | 0.176 | 0.364 | 17.0 | 2.0 | 8.3 | 12.00 | 17.76 | 2.00 | 31.76 |
| 10 | 0.176 | 0.364 | 16.0 | 2.0 | 8.0 | 11.00 | 16.99 | 2.00 | 29.99 |
| 10 | 0.176 | 0.364 | 16.0 | 4.0 | 7.3 | 12.00 | 9.26 | 2.00 | 23.26 |
| 10 | 0.176 | 0.364 | 16.0 | 4.0 | 5.8 | 14.00 | 5.13 | 2.00 | 21.13 |
| 10 | 0.176 | 0.364 | 15.5 | 4.0 | 8.2 | 10.00 | 11.97 | 2.00 | 23.97 |
| 10 | 0.176 | 0.364 | 15.0 | 4.0 | 7.7 | 10.00 | 10.55 | 2.00 | 22.55 |
| 10 | 0.176 | 0.364 | 14.0 | 4.0 | 7.4 | 9.00 | 9.78 | 2.00 | 20.78 |
| 10 | 0.176 | 0.364 | 13.5 | 4.0 | 6.9 | 9.00 | 8.36 | 2.00 | 19.36 |
| 10 | 0.176 | 0.364 | 13.0 | 4.0 | 6.8 | 8.50 | 7.98 | 2.00 | 18.48 |
| 10 | 0.176 | 0.364 | 13.0 | 4.0 | 7.2 | 8.00 | 9.01 | 2.00 | 19.01 |
| 10 | 0.176 | 0.364 | 12.0 | 4.0 | 6.5 | 7.50 | 7.20 | 2.00 | 16.70 |
As shown in Figure 4, the spray header 800 that above-mentioned each example provides, is positioned at the top of MOCVD device reaction chamber 900; Bottom in described reaction chamber 900 is provided with the pedestal 910 for carrying substrates 920, and it can rotate around central shaft; The well heater 930 of substrate 920 is also provided with below this pedestal 910; The substrate temperature on pedestal 910 can be made to reach the temperature of suitable growing crystal by well heater, typical in being greater than 600 DEG C, be even greater than 1000 DEG C.MOCVD device is also provided with air extractor, reacted tail gas is discharged reaction chamber and carries out processing or recycling.
Conventional the having of described substrate: gallium phosphide (GaP), indium phosphide (InP), silicon (Si), silicon carbide (SiC) and sapphire (Sapphire, Al
2o
3) etc.What usually grow is mainly Group III-V compound semiconductor film, wherein be used to provide the organic metal gas of III race's element source by the first inlet mouth conveying, conventional has: trimethyl-gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) etc.Be used to provide the hydride gas in V group element source by the second inlet mouth conveying, conventional has ammonia (NH
3), hydrogen arsenide (AsH
3), phosphuret-(t)ed hydrogen (PH
3) and silicon ethane (Si
2h
6) etc.Silane (the SiH as N-shaped doped source also may be mixed with in inputted gas
4), or as two luxuriant magnesium (CP of p-type doped source
2mg), etc.By the carrier gas that first, second inlet mouth is carried, conventional has: hydrogen (H
2), nitrogen (N
2), etc.
Or, in another kind of application structure, carried the mixed gas of organic metal gas and carrier gas by the first air-intake duct, carried the mixed gas of organic metal gas and hydride gas by the second air-intake duct.Carried by the first inlet mouth and form heavy curtain shape air-flow, in order to the separation gas that front two-way gas is separated, not only carrier gas can be used, Ar or He etc. sweeping gas (purgegas) can also be used, or the mixed gas of sweeping gas and carrier gas, or the assist gas that can not affect again art breading in reaction chamber while that other effectively can separating organic metal gas and hydride gas.
As shown in figure 21, for trimethyl-gallium TMGa, the chemical reaction process in analytical reaction chamber.Near inlet mouth place (when about 100 DEG C) in reaction chamber, by with NH
3reaction TMGa exhausts rapidly and becomes adducts; Along with gas Jet with downward flow direction, adducts heat (about about 500 DEG C time) is decomposed again makes TMGa concentration raise; And then at the substrate place (when temperature is about more than 900K) closer to high temperature, TMGa then almost all pyrolysis be monomethyl gallium MMGa, the main source of Ga atom in being grown as GaN film by MMGa.The gas being positioned at substrate surface forms frictional belt, and the thickness δ in this frictional belt has a preferred value δ
0, such as δ
0=10mm, δ
0kind that is general and metal organic gas spreads, thermograde, gas flow rate etc.Normally wish that the thickness δ in frictional belt can be less than this preferred value δ
0, to guarantee that there is high film growth rate; Otherwise the parasitic particle that film growth rate can reduce and generate will increase.
Need the reactant gases of consumption more in the MOCVD device of existing turbine type (turbodisktype), gas flow rate is high, and the pedestal high speed rotating (>1000rpm) of carrying substrates must be made, reduce the thickness δ in frictional belt, and gas is uniformly distributed on substrate.After the spray header that the present invention uses the various embodiments described above to describe in the MOCVD device of turbine type, do not need to make pedestal high speed rotating, can ensure yet and there is high film growth rate and gas uniform distribution.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. for air inlet and the refrigerating unit of MOCVD device, it is characterized in that, be provided with the spray header being positioned at reaction chamber inner top, wherein comprise:
The reactant gases diffusion chamber of multiple mutual isolation, multiple described reactant gases diffusion chamber comprises polylith dividing plate, wherein bottom baffles is provided with and organizes gas duct more, pass into reactant gases by conduit to reaction chamber, and described many group gas ducts comprise:
One group of first air-intake duct, is used for carrying organic metal gas in the reaction chamber of MOCVD device;
One group of second air-intake duct, is used for carrying hydride gas; The substrate surface that described organic metal gas and hydride gas are carried into reaction chamber inner bottom part by the carrier gas of this showerhead delivery carries out thin film deposition reaction;
Also comprise one piece of cooling plate below multiple described reactant gases diffusion chamber, described reactant gases diffusion chamber comprises the separation gas diffusion chamber between bottom baffles and cooling plate, and described cooling plate comprises:
One group of first inlet mouth, is used for carrying separation gas in described reaction chamber; Each described first air-intake duct is located among first inlet mouth corresponding respectively, the heavy curtain shape air ring that the separation gas of the first inlet mouth conveying is formed is peripheral around organic metal gas, the organic metal gas just sprayed and hydride gas is separated; And,
One group of second inlet mouth, separately for lower end bore is greater than the funnel-form of upper end bore;
The lower ending opening of described first inlet mouth and the second inlet mouth, spaced and be alternately distributed in the bottom surface of cooling plate; Each described second inlet mouth is communicated with second air-intake duct corresponded, and hydride gas and the mixed gas of carrier gas is carried in described reaction chamber by described second inlet mouth.
2. air inlet as claimed in claim 1 and refrigerating unit, is characterized in that,
Described first air-intake duct carries organic metal gas separately, or the mixed gas of conveying organic metal gas and carrier gas;
Described second air-intake duct carries hydride gas separately, or the mixed gas of conveying hydride gas and carrier gas;
The separation gas of described first inlet mouth conveying is carrier gas or sweeping gas or its mixed gas.
3. air inlet as claimed in claim 1 and refrigerating unit, is characterized in that,
Inner at described spray header, the polylith dividing plate of the reactant gases diffusion chamber of multiple mutual isolation includes the first dividing plate, second partition, the 3rd dividing plate;
The separation gas diffusion chamber formed between described cooling plate and the 3rd dividing plate, is communicated to described first inlet mouth and the second inlet mouth offered on the cooling plate;
Described 3rd the second reactant gases diffusion chamber formed between dividing plate and second partition is communicated to the second air-intake duct, described second air-intake duct is inserted in the second corresponding inlet mouth, makes the upper end of the second inlet mouth be centered around the periphery of the lower end of the second air-intake duct;
The the first reactant gases diffusion chamber formed between described second partition and the first dividing plate is communicated to the first air-intake duct, and described first air-intake duct interts in the first inlet mouth of correspondence.
4. air inlet as claimed in claim 3 and refrigerating unit, is characterized in that,
In the cooling plate of described spray header, the position of each gas passage avoided each inlet mouth and be communicated with it, is provided with for the logical pipeline of cooling medium flow.
5. air inlet as claimed in claim 3 and refrigerating unit, is characterized in that,
The sidewall of described second inlet mouth is provided with buffer zone, and described second air-intake duct is communicated with described second reactant gases diffusion chamber and reactant gases is passed into described buffer zone, and reactant gases flows into the second inlet mouth behind buffer zone.
6. air inlet as claimed in claim 3 and refrigerating unit, is characterized in that,
The bottom closed of described second air-intake duct is inserted in the second inlet mouth, this second air-intake duct sidewall offers some perforates and is used for transport of reactant gases body.
7. air inlet as claimed in claim 1 and refrigerating unit, is characterized in that,
The lower end position of described first inlet mouth is lower than the lower end position of the first air-intake duct be located in wherein.
8. the air inlet as described in claim 1 or 3 and refrigerating unit, is characterized in that,
Described second inlet mouth is the constant conical hopper structure of sidewall and vertical direction angle.
9. the air inlet as described in claim 1 or 3 and refrigerating unit, is characterized in that,
Described second inlet mouth is biconical funnel structure, comprises the epimere that sidewall and vertical direction angle are the first angle, and sidewall and vertical direction angle are the hypomere of the second angle, and the first angle is less than the second angle.
10. the air inlet as described in claim 1 or 3 and refrigerating unit, is characterized in that,
Described second inlet mouth is polyhedron funnel structure, and the end side of described second inlet mouth is Polygons, and sidewall is provided with many ribs.
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| CN201410272606.0A CN105200395B (en) | 2014-06-18 | 2014-06-18 | Air inlet and cooling device for MOCVD device |
| TW103123869A TW201600634A (en) | 2014-06-18 | 2014-07-10 | Intake and cooling device for MOCVD equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410272606.0A CN105200395B (en) | 2014-06-18 | 2014-06-18 | Air inlet and cooling device for MOCVD device |
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| CN105200395A true CN105200395A (en) | 2015-12-30 |
| CN105200395B CN105200395B (en) | 2017-11-03 |
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Also Published As
| Publication number | Publication date |
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| TW201600634A (en) | 2016-01-01 |
| TWI513855B (en) | 2015-12-21 |
| CN105200395B (en) | 2017-11-03 |
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Application publication date: 20151230 Assignee: Nanchang Medium and Micro Semiconductor Equipment Co., Ltd. Assignor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Contract record no.: 2018990000345 Denomination of invention: Gas inflowing and cooling device for MOCVD equipment Granted publication date: 20171103 License type: Exclusive License Record date: 20181217 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |