CN105200396A - Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof - Google Patents
Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof Download PDFInfo
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- CN105200396A CN105200396A CN201410272984.9A CN201410272984A CN105200396A CN 105200396 A CN105200396 A CN 105200396A CN 201410272984 A CN201410272984 A CN 201410272984A CN 105200396 A CN105200396 A CN 105200396A
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Abstract
The invention provides metalorganic chemical vapor deposition (MOCVD) equipment and a method for removing parasitic particles thereof. Spray headers are arranged on the top of a reaction cavity, and organic metal gas, hydride gas, carrier gas and cleaning gas are conveyed into the reaction cavity. The organic metal gas and the hydride gas which have just been ejected are separated in the middle area of the bottom face of each spray header. The cleaning gas is delivered in the edge area of the bottom face of each spray header for decomposing the organic metal gas and the hydride gas to pre-react the formed parasitic particles. By means of the MOCVD equipment and the method for removing the parasitic particles thereof, pollution to the equipment inside the reaction cavity by the parasitic particles can be effectively reduced, the growth quality of thin films is guaranteed, and the growth rate of the thin films is increased.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly the removing method of a kind of MOCVD device and wherein parasitic particle.
Background technology
At present, at Metalorganic Chemical Vapor Deposition (hereinafter referred to as MOCVD), by the II or III metal-organic gas of race, introduce in the reaction chamber of MOCVD device with the hydride gas containing IV or group Ⅴ element, make both mixed gass when flowing through the substrate surface in reaction chamber, can at substrate surface generation pyrolysis, thus epitaxy forms compound monocrystal film.
The schematic diagram of existing a kind of MOCVD device as shown in Figure 1, top in reaction chamber 60 is provided with spray header 70, and can introduce two-way reaction source gas in reaction chamber 60, a road is organic metal gas (MO, Metal-Organic), be such as trimethyl-gallium (i.e. (CH
3)
3ga, be called for short TMG or TMGa), trimethyl aluminium (i.e. [(CH
3)
3al]
2, be called for short TMA or TMAl) etc., another road is hydride gas, such as, be ammonia NH
3deng.Bottom in described reaction chamber 60 arranges the pedestal 61 of carrying substrates 62, can rotate around central shaft; The well heater 63 of substrate 62 is also provided with below this pedestal 61; The inner side of reaction chamber 60 sidewall can around arranging confinement ring 64.
But two-way reaction source gas had started to carry out pre-reaction TMGa+NH before being transported to substrate 62 surface in aforesaid device
3→ GaN+CH
4, TMAl+NH
3→ AlN+CH
4, formed inside inwall or confinement ring 64 that the parasitic particle 80 of GaN, AlN is attached to reaction chamber 60, the lower surface of spray header 70, the manufacturing process that thus constantly stops cleans these equipment in reaction chamber, reduces production efficiency; Parasitic particle 80 also can be scattered on substrate 62 randomly, affects the growthhabit of device surface film, affects quality product; In addition, some organic metal gas is not used for growing film but expended forming the process of above-mentioned parasitic particle 80, and the film growth rate of this equipment is declined.
As shown in Figure 2, a kind of existing installation that WO2012/143257A1 provides, the gas by introducing etching while deposit film decomposes formed parasitic particle.In the diffuser of this equipment, vertical direction is provided with three gas passages 8,9,10 separated from one another, can from the sidewall delivery of carrier gas of reaction chamber (as hydrogen H
2) with the mixture of each reaction source gas: first channel 8 is used for introducing hydride gas (as ammonia NH near reaction chamber top
3), third channel 10 near bottom reaction chamber, the heating region of substrate upstream is used for introducing purge gas (as HCl), second passage 9 is used for introducing organic metal gas (as TMG) between the above two, and by first, the gas of third channel conveying separates.Based on following reaction GaN+HCl+H
2→ GaCl (gas)+NH
4cl, Ga+HCl → GaCl+1/2H
2, this equipment can by the parasitic particle breakdown of near diffuser and substrate upstream, and the GaCl forming gaseous state after decomposing can discharge from reaction chamber via air extractor.
Summary of the invention
The object of this invention is to provide the removing method of a kind of MOCVD device and wherein parasitic particle, in the diffuser at reaction chamber top, organic metal gas and hydride gas are separated, to reduce the parasitic particle that both produce in diffuser surface pre-reaction; Further, decompose parasitic particle by the gas of edge region conveying etching, thus reduce the pollution in reaction chamber, ensure film growth quality, promote film growth rate.
In order to achieve the above object, a technical scheme of the present invention is to provide a kind of MOCVD device, is provided with the spray header being positioned at reaction chamber inner top;
From the inlet mouth of region intermediate being arranged on this showerhead bottom surface, in reaction chamber, carry separated from each other organic metal gas and hydride gas, and delivery of carrier gas is to carry organic metal gas and hydride gas carries out thin film deposition reaction to the substrate surface being positioned at reaction chamber inner bottom part;
Also from the inlet mouth of fringe region being arranged on this showerhead bottom surface, transport cleaning gas in reaction chamber, carried out to organic metal gas and hydride gas the parasitic particle that pre-reaction formed by purge gas and decomposes before arriving substrate.
In an embodiment, for carrying one group of first inlet mouth of organic metal gas, with for carry hydride gas one group of second inlet mouth, spaced and alternately distribute at the region intermediate of showerhead bottom surface;
For the 3rd inlet mouth of transport cleaning gas, be positioned at the fringe region of showerhead bottom surface.
Or the mixed gas of organic metal gas and carrier gas carried by described first inlet mouth in reaction chamber; The mixed gas of hydride gas and carrier gas carried by described second inlet mouth in reaction chamber.
In another embodiment, at the region intermediate of showerhead bottom surface, one group of first inlet mouth for carrying organic metal gas is set, for carrying one group of second inlet mouth of hydride gas, for one group of the 4th inlet mouth of delivery of carrier gas; At the fringe region of showerhead bottom surface, the 3rd inlet mouth being used for transport cleaning gas is set;
Described first inlet mouth and described second inlet mouth spaced and be alternately distributed; Further, each described first inlet mouth is located among the 4th inlet mouth corresponding respectively, makes carrier gas be looped around organic metal gas periphery, the organic metal gas just sprayed and hydride gas is separated.
Alternatively, described first inlet mouth is also simultaneously to transport cleaning gas in reaction chamber.
Alternatively, described purge gas is any one halogen-containing gas or its combination, or the mixed gas of halogen-containing gas and assist gas.
Alternatively, described purge gas is HCl; Or described purge gas is the mixed gas of Cl2 and H2.
Alternatively, the region intermediate of described showerhead bottom surface, corresponding with the substrate put area bottom reaction chamber; The fringe region of described showerhead bottom surface, is looped around the outside of described substrate put area.
Alternatively, the bottom in described reaction chamber is provided with the pedestal for carrying substrates, can rotate around central shaft; The well heater of substrate is provided with below described pedestal;
Described MOCVD device is also provided with air extractor and the tail gas after gas reaction is discharged reaction chamber.Alternatively, the inside sidewalls of described reaction chamber is surrounded with confinement ring; The temperature of described confinement ring remains on more than the sublimation temperature of the reaction intermediate that parasitic particle breakdown process is formed, offer pipeline in described confinement ring, the fluid medium be heated to more than the sublimation temperature of reaction intermediate is flowed in the pipeline of confinement ring.
Another technical scheme of the present invention is to provide a kind of parasitic clearance of particles method, arranges spray header at the top of reaction chamber; At the region intermediate of showerhead bottom surface, carry organic metal gas spaced apart from each other and hydride gas, and carry the carrier gas to substrate of organic metal gas and hydride gas respectively;
At the fringe region of showerhead bottom surface, decompose organic metal gas and hydride gas by transport cleaning gas and carry out the parasitic particle that pre-reaction formed, and the air-flow forming heavy curtain shape is to stop that organic metal gas and hydride gas are directly blown into the inwall of reaction chamber.
Alternatively, at the region intermediate of showerhead bottom surface, formed the air-flow of heavy curtain shape by the carrier gas being looped around organic metal gas periphery, the organic metal gas just sprayed and hydride gas are separated.
Alternatively, the temperature of control constraints ring inwall is higher than the sublimation temperature of reaction intermediate in parasitic particle breakdown process.
Alternatively, at the region intermediate of showerhead bottom surface, there is another road purge gas to be delivered to together in reaction chamber along with organic metal gas simultaneously.
Alternatively, described purge gas is any one halogen-containing gas or its combination, or the mixed gas of halogen-containing gas and assist gas.
Alternatively, described purge gas is HCl; Or described purge gas is Cl
2and H
2mixed gas.
Alternatively, the flow proportional of described purge gas and organic metal gas is greater than 0.04 and is less than 0.14.
Compared with prior art, the removing method of MOCVD device provided by the invention and wherein parasitic particle, makes purge gas be carried by the inlet mouth of showerhead bottom surface fringe region, the parasitic particulate matter accumulating in reaction chamber inwall or confinement ring inwall is decomposed.Can control the sublimation temperature of temperature higher than reaction intermediate in decomposition course of reaction chamber inwall or confinement ring inwall further, the reaction intermediate avoiding purge gas and organic metal gas, hydride gas to be obtained by reacting accumulates in equipment surface.
Further, at the region intermediate of showerhead bottom surface, make the carrier gas of just ejection be looped around the modes such as the outside of organic metal gas, organic metal gas and hydride gas are separated, avoid both too early contacts and pre-reaction occurs.By expanding the end bore of each inlet mouth (being such as the inlet mouth of hydride gas), increase the area that showerhead bottom surface is set to inlet mouth, utilize the air-flow of inlet mouth to blow away parasitic particle, effectively reduce the area that the parasitic particle of showerhead bottom surface can gather simultaneously.Some purge gass can also be mixed into decompose the parasitic particle accumulated near inlet end further in the gas passage of organic metal gas simultaneously.The present invention effectively can reduce the pollution of parasitic particle to reaction endoluminal, ensures film growth quality, promotes film growth rate.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing a kind of MOCVD device;
Fig. 2 is the structural representation of existing another kind of MOCVD device;
Fig. 3 is the structural representation of MOCVD device of the present invention;
Fig. 4 is the structural representation of spray header in the present invention;
Fig. 5 be in Fig. 4 spray header A-A to cross section view;
Fig. 6 is the effect schematic diagram of spray header Shang Ge road air inlet situation of the present invention;
Fig. 7 is in the present invention under different air pressure and gas ratio, and the schematic diagram that film growth rate when whether adding purge gas compares.
Embodiment
As shown in Figure 3, the invention provides a kind of MOCVD (metal organic chemical vapor deposition) equipment, reaction chamber 60 inner top is provided with spray header 70, in reaction chamber 60, carry organic metal gas spaced apart from each other and hydride gas from the region intermediate of spray header 70 bottom surface, by delivery of carrier gas, organic metal gas and hydride gas are carried into the reaction that thin film deposition is carried out on substrate 62 surface simultaneously; Also from the fringe region of spray header 70 bottom surface to transport cleaning gas in reaction chamber 60, before arriving substrate 62, there is to organic metal gas and hydride gas pre-reaction formed parasitic particle to carry out etching and decompose, thus can realize during the technique of thin film deposition simultaneously in reaction chamber 60 clean and without the need to opening reaction chamber 60.
In the first example of spray header shown in Fig. 3, be alternately distributed the first inlet mouth 71 and the second inlet mouth 72 at the region intermediate of spray header 70 bottom surface, this region intermediate is roughly corresponding with substrate 62 put area in reaction chamber 60 bottom base.First inlet mouth 71 is used for carrying the mixed gas of organic metal gas and carrier gas, and the second inlet mouth 72 is used for carrying the mixed gas of hydride gas and carrier gas; Any one first inlet mouth 71 all and contiguous the second inlet mouth 72 of its periphery have certain interval, the situation producing parasitic particle to prevent the too early reaction of the organic metal gas of just ejection and hydride gas near the inlet mouth of spray header 70 bottom surface occurs.
Offer the 3rd inlet mouth 73 at the fringe region of spray header 70 bottom surface, this fringe region is roughly looped around the outside of substrate 62 put area on pedestal.The purge gas that 3rd inlet mouth 73 is carried, defines the air-flow of similar heavy curtain shape, organic metal gas and hydride gas can be prevented directly to be blown into the inwall of reaction chamber 60; Described purge gas can also carry out etching and decompose to the parasitic particle be attached on reaction chamber 60 inwall.In different examples, the 3rd inlet mouth 73 can be an independent ring-shaped ventilation mouth, also can be multiple ventages of one group of annular spread.
In the second embodiment of spray header shown in Fig. 4, Fig. 5, purge gas is still carried by the 3rd inlet mouth 73 in spray header 70 bottom edge region; And the region intermediate in spray header 70 bottom surface, the 4th inlet mouth 74 delivery of carrier gas is separately set, and the hydride gas that the organic metal gas carried by the first inlet mouth 71 and the second inlet mouth 72 are carried separates.In described spray header 70, be provided with vertically distribution and four layers that separate with dividing plate arrange respectively and the corresponding gas passage be communicated with of the first inlet mouth 71 to the four inlet mouth 74.
Particularly, one group of second inlet mouth 72 and one group of the 4th inlet mouth 74, its opening is in interval alternative distribution at the region intermediate of spray header 70 bottom surface.Each in one group of first inlet mouth 71, be located in corresponding the 4th inlet mouth 74 respectively, thus the carrier gas can carried by the 4th inlet mouth 74 forms the air-flow of heavy curtain shape, hydride gas in organic metal gas in first inlet mouth 71 and the second inlet mouth 72 is separated, avoids both just ejection just pre-reaction to occur.
If the end of each inlet mouth is the one end being positioned at spray header 70 bottom surface, and the head end of each inlet mouth is positioned at one end that spray header 70 is connected to corresponding gas passage.Then the end bore of the first inlet mouth 71 in the present embodiment, is less than the end bore of the 4th inlet mouth 74 be looped around outside it, and is both less than the end bore of the second inlet mouth 72.
In order to reduce parasitic particle gathering in spray header 70 bottom surface, under the prerequisite taking into account each road gas flow, by expanding the bore (such as expanding the second inlet mouth 72 and/or the 4th inlet mouth 74) of each inlet end, spray header 70 bottom surface area as much as possible can be offered as inlet mouth.Thus, at the inlet mouth place of spray header 70 bottom surface owing to there being gas flow, parasitic particle is not easy attachment; And spray header 70 bottom surface other areas except inlet mouth are reduced, the impact of parasitic particle attachment effectively can be reduced.Preferably, the second inlet mouth 72 is designed to end bore and is greater than the tubaeform of its head end bore.
In another example, other of spray header 70 arrange constant, and be delivered to the gas passage being communicated with the 3rd inlet mouth 73 in spray header 70 at purge gas before, separate the gas passage that a road purge gas is transported to connection first inlet mouth 71, utilize the first inlet mouth 71 to carry the mixed gas of organic metal gas and purge gas (being then the mixed gas of organic metal gas, carrier gas and purge gas in Fig. 3 example) simultaneously, thus by purge gas, the parasitic particle accumulated near the inlet end of spray header 70 bottom surface is decomposed.
In various embodiments, conventional the having of described substrate 62: gallium phosphide (GaP), indium phosphide (InP), silicon (Si), silicon carbide (SiC) and sapphire (Sapphire, Al
2o
3) etc.What usually grow is mainly Group III-V compound semiconductor film, wherein be used to provide the organic metal gas of III race's element source by the first inlet mouth 71 conveying, conventional has: trimethyl-gallium (TMG), trimethyl aluminium (TMA), trimethyl indium (TMI) etc.Be used to provide the hydride gas in V group element source by the second inlet mouth 72 conveying, conventional has ammonia (NH
3), hydrogen arsenide (AsH
3), phosphuret-(t)ed hydrogen (PH
3) and silicon ethane (Si
2h
6) etc.Silane (the SiH as N-shaped doped source also may be mixed with in inputted gas
4), or as two luxuriant magnesium (CP of p-type doped source
2mg), etc.Conventional carrier gas has: hydrogen (H
2), nitrogen (N
2), etc.
By the purge gas of the 3rd inlet mouth 73 conveying in the present invention, generally choose and have corrosion Decomposition to parasitic particle and the gas of crystalline structure growth on substrate 62 can not be affected simultaneously, can be halogen-containing gas or its combination, such as hydrogenchloride (HCl), chlorine (Cl
2) etc.; Or the mixed gas of halogen-containing gas and some assist gass, conventional the having of assist gas: oxygen (O
2), hydrogen (H
2), carbonic acid gas (CO
2), argon gas (Ar) etc.
First embodiment is below provided, uses gas TMG and NH
3as reaction source, H
2as carrier gas, HCl is as purge gas; Purge gas HCl and two kind of reaction source TMG and NH
3between reaction have:
Ga(CH
3)
3+HCl→GaCl+CH
4+C
2H
6+H
2；
GaCl+NH
3→ GaN+HCl+H
2(reusable);
NH
3+ HCl ← → NH
4cl (gas).
Reaction between the parasitic particle of described purge gas HCl and GaN has:
GaN+HCl+H
2→ GaCl (gas)+NH
4cl; Ga+HCl → GaCl+1/2H
2;
Known, purge gas is used to decompose parasitic particle in the present invention, can not affect process original in reaction chamber, and the GaCl obtaining gaseous state after reaction can discharge reaction chamber by the air extractor of MOCVD device and carries out processing or recycling together with other tail gas.
Second embodiment is below provided, uses gas TMA and NH
3as reaction source, due to activation energy=0 of reaction, two kinds of reaction source gas are as easy as rolling off a log be there is pre-reaction and generates the parasitic particle of AlN in reaction chamber.
Be used alone Cl
2during as purge gas, the reaction between itself and the parasitic particle of AlN has:
AlN+3/2Cl
2→ AlCl
3(gas)+1/2N
2
By above-mentioned reaction, can by parasitic particle removal.But, in reaction chamber, also can relate to following reaction simultaneously:
(CH
3)
3al:NH
3+ 3Cl
2→ 3CH
3cl (gas)+AlCl
3: NH
3
[(CH
3)
2alNH
2]
3+ 2Cl
2→ 2CH
3cl (gas)+[AlCl
2nH
2]
3
The former can generate nonvolatile adducts AlCl
3: NH
3, its sublimation temperature is more than 600 DEG C; Latter can generate nonvolatile oligopolymer, is all difficult to remove.Thus need to adjust purge gas, at Cl
2basis on add assist gas: O
2, H
2, CO
2, etc.
Based on each embodiment above-mentioned, in the MOCVD device of an example provided by the invention, as shown in Figure 3, the top in reaction chamber 60 is provided with the above-mentioned spray header 70 for introducing organic metal gas, hydride gas, carrier gas and purge gas.The position avoiding each gas passage and inlet mouth in spray header 70 is provided with the pipeline (not shown) can led to for cooling medium flow.Bottom in described reaction chamber 60 is provided with the pedestal 61 for carrying substrates 62, and it can rotate around central shaft; The well heater 63 of substrate 62 is also provided with below this pedestal 61.The substrate temperature on pedestal 61 can be made to reach the temperature of suitable growing crystal by well heater, typical in being greater than 600 DEG C, be even greater than 1000 DEG C.Also be provided with air extractor reacted tail gas discharge reaction chamber 60 is carried out processing or recycling.
In the inner side of reaction chamber 60 sidewall around arranging confinement ring 64, the purge gas decomposition that the parasitic particle on confinement ring 64 inner surface also can be carried by the 3rd inlet mouth 73 can be accumulated in.In some preferred examples, such as, by offering pipeline in confinement ring 64, the fluid medium after heating is flowed in the duct, the temperature of confinement ring 64 is remained on more than the sublimation temperature of the reaction intermediate of above-mentioned purge gas and reaction source gas.Such as, the reaction intermediate NH in above-mentioned first embodiment
4cl, can distil higher than when 320 DEG C and change into NH
3, the temperature of confinement ring 64 therefore can be kept higher than 320 DEG C (such as higher than 350 DEG C), prevent on its internal surface accumulating in confinement ring 64.
Based on aforesaid device, in the parasitic clearance of particles method of one provided by the invention, in reaction chamber, introduce organic metal gas, hydride gas, carrier gas and purge gas by spray header respectively; By purge gas, the parasitic particulate matter accumulated in reaction chamber by organic metal gas, hydride gas pre-reaction is decomposed.Purge gas is wherein carried by the inlet mouth of showerhead bottom surface fringe region, the parasitic particulate matter accumulating in confinement ring inwall is decomposed.Can control the sublimation temperature of temperature higher than reaction intermediate in decomposition course of reaction chamber confinement ring inwall further, the reaction intermediate avoiding purge gas and organic metal gas, hydride gas to be obtained by reacting accumulates in equipment surface.
Further, at the region intermediate of showerhead bottom surface, the organic metal gas of conveying and hydride gas are separated, avoid both pre-reaction to occur too early contact.By expanding the end bore of each inlet mouth (being such as the inlet mouth of hydride gas), increase the area that showerhead bottom surface is set to inlet mouth, utilize the air-flow of inlet mouth to blow away parasitic particle, effectively reduce the area that the parasitic particle of showerhead bottom surface can gather simultaneously.Some purge gass can also be mixed into decompose the parasitic particle accumulated near inlet end further in the gas passage of organic metal gas simultaneously.
Except in this paper embodiment by spaced apart for the inlet mouth of organic metal gas and hydride gas or make the carrier gas of just ejection be looped around except the mode in the outside of organic metal gas, other any one organic metal gas and hydride gas can be separated structure and the method for (carrier gas is carried with organic metal gas or hydride gas or separately conveying) when spraying, can both be applied in method of the present invention.
As shown in Figure 7, be the film growth rate of GaN in MOCVD device under the ratio of different air pressure and different HCl:TMG, X-coordinate is the molar flow of per minute, and ordinate zou is film growth rate.Wherein, the curve representation air pressure 900mbar of side's point, situation during HCl:TMG ratio 0.14, film growth rate corresponding under same flow is minimum; The curve representation air pressure 600mbar of triangle form point, situation during HCl:TMG ratio 0.04, film growth rate corresponding under same flow is between; The curve representation air pressure 400mbar of black circle, situation during HCl:TMG ratio 0.04, film growth rate corresponding under same flow is the highest.Provide the curve representation air pressure 400mbar of soft dot in addition, do not use the situation of purge gas, the meeting of part TMG gas and hydride gas are as NH
3reaction produces the particle of Nano grade, these particles can not generate crystal at below pedestal but can become contaminant particle is attached on reaction intraluminal device, so along with the crystal deposition rate of increase gradually of reaction gas flow be not synchronous increase, but as shown in Figure 7 after 2000umol/min sedimentation rate to a bottleneck, cannot continue to increase again.The generation that the present invention can suppress this microparticle by adding minority purge gas in reactant gases simultaneously as HCl, improves overall speed of reaction, reduces reactant gases waste.So pass into clean air except the fringe region from spray header, making clean air flow to confinement ring inwall can outside decreasing pollution thing deposition, and a small amount of clean air of proper ratio flows into below conversion zone by spray header region intermediate also obviously can improve speed of response.Preferably, the flow proportional of described purge gas and organic metal gas is made to be greater than 0.04 and to be less than 0.14.
In sum, the removing method of MOCVD device provided by the invention and wherein parasitic particle, effectively can reduce parasitic particle to the pollution in reaction chamber, ensures film growth quality, promotes film growth rate.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (17)
1. a MOCVD device, is characterized in that, is provided with the spray header being positioned at reaction chamber inner top;
From the inlet mouth of region intermediate being arranged on this showerhead bottom surface, in reaction chamber, carry separated from each other organic metal gas and hydride gas, and delivery of carrier gas is to carry organic metal gas and hydride gas carries out thin film deposition reaction to the substrate surface being positioned at reaction chamber inner bottom part;
Also from the inlet mouth of fringe region being arranged on this showerhead bottom surface, transport cleaning gas in reaction chamber, carried out to organic metal gas and hydride gas the parasitic particle that pre-reaction formed by purge gas and decomposes before arriving substrate.
2. MOCVD device as claimed in claim 1, is characterized in that,
For carrying one group of first inlet mouth of organic metal gas, with for carry hydride gas one group of second inlet mouth, spaced and alternately distribute at the region intermediate of showerhead bottom surface;
For the 3rd inlet mouth of transport cleaning gas, be positioned at the fringe region of showerhead bottom surface.
3. MOCVD device as claimed in claim 2, is characterized in that,
The mixed gas of organic metal gas and carrier gas carried by described first inlet mouth in reaction chamber; The mixed gas of hydride gas and carrier gas carried by described second inlet mouth in reaction chamber.
4. MOCVD device as claimed in claim 2, is characterized in that,
At the region intermediate of showerhead bottom surface, one group of first inlet mouth for carrying organic metal gas is set, for carrying one group of second inlet mouth of hydride gas, for one group of the 4th inlet mouth of delivery of carrier gas; At the fringe region of showerhead bottom surface, the 3rd inlet mouth being used for transport cleaning gas is set;
Described first inlet mouth and described second inlet mouth spaced and be alternately distributed; Further, each described first inlet mouth is located among the 4th inlet mouth corresponding respectively, makes carrier gas be looped around organic metal gas periphery, the organic metal gas just sprayed and hydride gas is separated.
5. the MOCVD device as described in claim 3 or 4, is characterized in that,
Described first inlet mouth is also simultaneously to transport cleaning gas in reaction chamber.
6. MOCVD device as claimed in claim 1, is characterized in that,
Described purge gas is any one halogen-containing gas or its combination, or the mixed gas of halogen-containing gas and assist gas.
7. MOCVD device as claimed in claim 1, is characterized in that,
Described purge gas is HCl; Or described purge gas is Cl
2and H
2mixed gas.
8. MOCVD device as claimed in claim 1, is characterized in that,
The region intermediate of described showerhead bottom surface, corresponding with the substrate put area bottom reaction chamber; The fringe region of described showerhead bottom surface, is looped around the outside of described substrate put area.
9. MOCVD device as claimed in claim 1, is characterized in that,
Bottom in described reaction chamber is provided with the pedestal for carrying substrates, can rotate around central shaft; The well heater of substrate is provided with below described pedestal;
Described MOCVD device is also provided with air extractor and the tail gas after gas reaction is discharged reaction chamber.
10. MOCVD device as claimed in claim 1, is characterized in that,
The inside sidewalls of described reaction chamber is surrounded with confinement ring; The temperature of described confinement ring remains on more than the sublimation temperature of the reaction intermediate that parasitic particle breakdown process is formed, offer pipeline in described confinement ring, the fluid medium be heated to more than the sublimation temperature of reaction intermediate is flowed in the pipeline of confinement ring.
11. 1 kinds of parasitic clearance of particles methods, is characterized in that,
At the top of reaction chamber, spray header is set; At the region intermediate of showerhead bottom surface, carry organic metal gas spaced apart from each other and hydride gas, and carry the carrier gas to substrate of organic metal gas and hydride gas respectively;
At the fringe region of showerhead bottom surface, decompose organic metal gas and hydride gas by transport cleaning gas and carry out the parasitic particle that pre-reaction formed, and the air-flow forming heavy curtain shape is to stop that organic metal gas and hydride gas are directly blown into the inwall of reaction chamber.
12. parasitic clearance of particles methods as claimed in claim 11, is characterized in that,
At the region intermediate of showerhead bottom surface, formed the air-flow of heavy curtain shape by the carrier gas being looped around organic metal gas periphery, the organic metal gas just sprayed and hydride gas are separated.
13. parasitic clearance of particles methods as claimed in claim 11, is characterized in that,
The temperature of control constraints ring inwall is higher than the sublimation temperature of reaction intermediate in parasitic particle breakdown process.
14. parasitic clearance of particles methods as claimed in claim 11, is characterized in that,
At the region intermediate of showerhead bottom surface, there is another road purge gas to be delivered to together in reaction chamber along with organic metal gas simultaneously.
15. parasitic clearance of particles methods as claimed in claim 11, is characterized in that,
Described purge gas is any one halogen-containing gas or its combination, or the mixed gas of halogen-containing gas and assist gas.
16. parasitic clearance of particles methods as claimed in claim 11, is characterized in that,
Described purge gas is HCl; Or described purge gas is Cl
2and H
2mixed gas.
17. parasitic clearance of particles methods as claimed in claim 14, is characterized in that,
The throughput ratio of described purge gas and organic metal gas is greater than 0.04 and is less than 0.14.
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| CN201410272984.9A CN105200396A (en) | 2014-06-18 | 2014-06-18 | Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof |
| TW103123870A TW201600635A (en) | 2014-06-18 | 2014-07-10 | MOCVD equipment and removal method of parasitism particle therein |
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| CN201410272984.9A CN105200396A (en) | 2014-06-18 | 2014-06-18 | Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof |
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| CN109321894A (en) * | 2017-07-31 | 2019-02-12 | 北京北方华创微电子装备有限公司 | A kind of depositing system and method enhancing cleaning effect |
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| CN113088929A (en) * | 2021-03-01 | 2021-07-09 | 中山德华芯片技术有限公司 | MOCVD reaction chamber and application thereof |
| CN113548648A (en) * | 2020-04-23 | 2021-10-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Aluminum nitride nanoparticles and method for preparing same |
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Also Published As
| Publication number | Publication date |
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| TW201600635A (en) | 2016-01-01 |
| TWI532877B (en) | 2016-05-11 |
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