CN209428598U - Improve the depositing system of nozzle head - Google Patents

Abstract

The depositing system that the utility model provides a kind of improvement nozzle head includes reaction chamber, supporting part, heater, gas distribution assembly, chemical substance transfer module and heat exchange module.Supporting part is configured in reaction chamber, has the support base connecting with reaction chamber and the load plate to carry substrate；Heater configuration is below load plate, to silicon；Gas distribution assembly configures above relative to supporting part, including multiple first spray head main bodys and multiple second spray head main bodys, each first spray head main body has the first gas passage and nozzle head for extending through first spray head main body, and each second spray head main body has second gas channel and the nozzle head for extending through second spray head main body；Chemical substance transfer module is connect with first gas channel and second gas channel, and chemical substance is transferred to reaction chamber；Heat exchange module is connected to the wall and gas distribution assembly of reaction chamber, for regulating and controlling the temperature of reaction chamber and gas distribution assembly.

Description

Improve the depositing system of nozzle head

Technical field

The utility model is to provide a kind of depositing system for improveing nozzle head, especially has and is directed to organometallic chemistry gas Phase depositing operation does the nozzle head improved.

Background technique

Metalorganic chemical vapor deposition (hereinafter referred to as MOCVD) technology is commonly used outside III-V race of semiconductor In growth process.In epitaxial growth technology, technique institute is carried out usually using variety classes high purity metal organic compound The epitaxial layer needed, epitaxial layer may include two or more III group metal (examples that III group alloy nitride can be formed on wafer Such as Al, Ga, In), such as AlGaN, InGaN, InAlN, InAlGaN etc. epitaxial layer.

Outer layer growth technique is by the metal-organic trimethyl gallium of III race (TMGa), trimethyl indium (TMIn) Deng such as with V race's gas: arsenic hydride (arsine), hydrogen phosphide (phosphine), ammonia (ammonia), for example, by hydrogen Carrier gas stream be carried to and be heated in high temperature substrate, such as gallium arsenide chips, sapphire chip.

At a high temperature of in MOCVD reactor, III race's metallo-organic compound can be heated and thermal cracking, with V race's gas It carries out gas phase reaction and generates vapor-phase reactant, vapor-phase reactant can diffuse to substrate surface, and be adsorbed in substrate surface, concurrently Raw surface reaction, the atom for being adsorbed in substrate surface generate the secondary collision between atom and form cluster, cluster and adjacent group Cluster polymerize and forms epitaxial layer.And the product of surface reaction evaporates parsing, separates with substrate surface desorption.

However often following problems can occur for MOCVD reactor: the generation of gas phase reaction is influenced because of vortex；Because temperature influences The reaction rate reacted to gas phase reaction and surface；Keep epitaxial deposition uneven because V race's gas is reacted depleted； Because III race's metallo-organic compound and V race's gas are blended to produce pre-reaction in nozzle head, the product of pre-reaction is deposited on spray Mouth causes nozzle head to block.

Utility model content

In order to improve missing mentioned by the prior art, the purpose of the utility model is to provide a kind of the heavy of improvement nozzle head Product system includes reaction chamber, supporting part, heater, gas distribution assembly, chemical substance transfer module and heat exchange module. Supporting part is configured in reaction chamber, has the support base connecting with reaction chamber and the load plate to carry substrate；Heating Device is configured at below load plate, to silicon；Gas distribution assembly configures above relative to supporting part, including multiple the One nozzle body and multiple second spray head main bodys, first spray head main body have the first gas for extending through first spray head main body logical Road and nozzle head, second spray head main body have second gas channel and the nozzle head for extending through second spray head main body；Chemicals Matter transfer module is connect with first gas channel and second gas channel, and chemical substance is transferred to reaction chamber；Heat exchange Module is connected to the wall and gas distribution assembly of reaction chamber, for regulating and controlling the temperature of reaction chamber and gas distribution assembly.

Based on above-mentioned, the depositing system of the improvement nozzle head of the utility model regulates and controls gas phase through chemical substance transfer module The parameter of reaction, the parameter of surface reaction, the indoor flow field of reaction chamber；Regulate and control the indoor processing of reaction chamber through heat exchange module The uniformity of temperature, cooperation according to chemical substance transfer module, heat exchange module etc. regulation situation and the nozzle head improved, To realize that the product for reducing pre-reaction is deposited on the probability of nozzle head.

Detailed description of the invention

Fig. 1 is technology according to the present utility model, indicates the schematic diagram of the depositing system of improvement nozzle head；

Fig. 2 is technology according to the present utility model, indicates the cross-section diagram of the nozzle head improvement design of depositing system；And

Fig. 3 is technology according to the present utility model, indicates the flow chart of the nozzle head improvement of depositing system.

Specific embodiment

In order to make the purpose of this utility model, technical characteristic and advantage, can more correlative technology field personnel understood, and It is carried out the utility model, cooperates appended schema herein, specifically illustrate the technical characteristics of the utility model and embodiment, And enumerate preferred embodiment further explanation.It is related with the utility model feature to express with the schema hereinafter compareed Signal does not need completely to draw according to practical situation.And the those skilled in the art involved in the explanation of this case embodiment Technology contents known to member, are also no longer stated.

In the present invention, the X-axis, Y-axis and Z axis system use the cassette coordinate system (Cartesian of dextrorotation coordinate system).X-axis, Y-axis, Z axis and origin detailed direction in the present invention, be according in each schema Appearance is indicated, and defining X-axis with the plane that Z axis is constituted is the first plane, and the plane that X-axis and Y-axis are constituted is the second plane, Y The plane that axis and Z axis are constituted is third plane.

First, referring to fig. 1, and Fig. 1 shows the schematic diagrames of the depositing system of improvement nozzle head.As shown in Figure 1, improvement nozzle Head depositing system 1 include for carry out the reaction chamber 10 of MOCVD, supporting part 20, heater 30, gas distribution assembly 40, Chemical substance transfer module 50 and heat exchange module 60.

Supporting part 20 is configured in reaction chamber 10, has the support base 201 connecting with reaction chamber 10 and to hold Carry the load plate 202 of substrate S.Heater 30 is configured below load plate 202, to heat to substrate S.In order to monitor the substrate Temperature, 202 lower section sensors configured (not shown) of Yu Zaipan.

Gas distribution assembly 40 configures above relative to supporting part 20, to spray the first gas to the substrate S on load plate 202 Body, second gas.Gas distribution assembly 40 includes multiple first spray head main bodys 41 and multiple second spray head main bodys 42, first spray head Main body 41, which has, extends through first gas passage 401 therein and nozzle head 411, and second spray head main body 42, which has, to be extended through Second gas channel 402 therein and nozzle head 411.Nozzle head 411 is towards the substrate S on load plate 202, in order to keep epitaxial layer heavy Product uniformly, the improvement of nozzle head 411 can refer to load plate, substrate temperature, the size of substrate and design.

Chemical substance transfer module 50 is connect with first gas passage 401 and second gas channel 402, by chemical substance It is transferred to reaction chamber 10.Chemical substance includes metal organic precursor object gas, V race's gas, carrier gas, cleaning gas or cleaning Gas.Chemical substance transfer module 50 is regulated and controled according to gas phase reaction mechanism, surface reaction mechanism and flow field mechanism, to keep away Exempt to cause to be vortexed in reaction chamber 10；And cooperate gas phase reaction mechanism and surface reaction mechanism, to avoid metal organic precursor Any one is preferentially reacted depleted for object gas or V race's gas, causes epitaxial deposition uneven.

Chemical substance transfer module 50 includes first gas source of supply 51 and second gas source of supply 52.First gas supply Source 51 is coupled to first spray head main body 41, and first gas is passed through first gas passage 401, is finally sent to reaction chamber Room 10；Second gas source of supply 52 is coupled to second spray head main body 42, and second gas is passed through second gas channel 402, finally it is sent to reaction chamber 10.It can be with the first pipeline 501 between first gas source of supply 51 and first gas passage 401 Connection can obtain the flow velocity of first gas in the first pipeline 501 installing flowmeter；Second gas source of supply 52 and second gas It can be connected between channel 402 with the second pipeline 502, the flow velocity of second gas can be obtained in the second pipeline 502 installing flowmeter.

In one embodiment, chemical substance transfer module 50 is installed to transmit metal organic precursor object gas, V race gas To first gas source of supply 51 and/or second gas source of supply 52, flowed respectively by the first pipeline 501 and/or the second pipeline 502 To first gas passage 401 and/or second gas channel 402, it is finally sent to reaction chamber 10.

In one embodiment, metal organic precursor object gas includes suitable gallium (Ga) predecessor, preferably trimethyl gallium (TMG), triethyl-gallium (TEG)), suitable aluminium predecessor (such as trimethyl aluminium (TMA)), or suitable indium predecessor (front three Base indium (TMI)) etc. gas.V race's gas is preferably the gas of arsenic hydride, hydrogen phosphide, ammonia etc..Carrier gas is preferably hydrogen Gas.Cleaning gas is preferably nitrogen.Clean gas is preferably argon gas.First gas and second gas can be metal organic precursor Object gas, V race's gas, carrier gas, cleaning gas or clean gas.When reaction chamber 10 carries out deposition reaction, first gas And second gas is preferably metal organic precursor object gas, V race's gas and carrier gas；When reaction chamber 10 carries out washing down cleaning When, first gas and second gas are preferably cleaning gas or clean gas, but not limited to this.

Heat exchange module 60 is connected to the wall 101 and gas distribution assembly 40 of reaction chamber 10, for regulating and controlling reaction chamber 10 and gas distribution assembly 40 temperature.Heat exchange module 60 further includes temperature control gas chamber (not shown), temperature control Gas chamber and gas distribution assembly 40 couple, so that thermal control fluid flows through gas distribution assembly 40, to help regulation gas distribution assembly 40 temperature.Suitable thermal control fluid includes but is not limited to water, water-based ethylene glycol mixture, perfluorinated polyether, oils heat Transfer fluid or similar fluid.

The heating that is there is provided by heater 30 and pass through gas distribution assembly by supplying thermal control fluid from heat exchange module 60 The provided heating that thermal control fluid is transferred to the wall 101 of reaction chamber 10 is heated or cooled and/or penetrated provided by 40 Or it is cooling, so that the treatment temperature in reaction chamber 10 is maintained about 500 DEG C to about 1300 DEG C, is in more detail about 700 DEG C to about 1300℃.In one embodiment, the input power for giving heater 30 is about 45kW to about 90kW, to produce in reaction chamber 10 The raw treatment temperature between about 900 DEG C to about 1050 DEG C.In one embodiment, treatment temperature is to penetrate to utilize sensor (such as more than one thermocouple) monitoring, the back side temperature of sensor measurement substrate S.

In one embodiment, the change of temperature needs to adjust the power for being applied to heater 30 and/or adjustment heat exchange mould Thermal control fluid temperature (F.T.) in block 60, to maintain the preferred temperature in reaction chamber 10.Therefore, metal organic precursor object gas is residual Excess can continue accumulation on these surfaces, and need to adjust power and/or adjustment thermal control fluid to operate successive sedimentation processing procedure. Substantially, the temperature of substrate S must be maintained desired set point by the control of reaction chamber 10, be distributed through in gas Change the heat of disengaging reaction chamber 10 when 40 surface nature of nozzle component changes and reaches.In addition, it is contemplated that being difficult to change heat The temperature and heater power of flow control body, and often need to clean or be replaced with new component.Therefore, the utility model proposes Nozzle head 411 is improved, to reduce the probability that the product of pre-reaction is deposited on nozzle head 411.

In one embodiment, nozzle head 411 improvement can according to substrate temperature, load plate, substrate size (i.e. effectively Depositional area), gas phase reaction mechanism, surface reaction mechanism, flow field mechanism, the flow velocity of first gas and second gas flow velocity and Design.So that epitaxial deposition is uniform, and nozzle head is avoided to block.

The improvement design of nozzle head 411 is referring to FIG. 2, Fig. 2 indicates the cross-section diagram of the nozzle head improvement design of depositing system. As shown in Fig. 2, the caliber D of first spray head main body 41, second spray head main body 42 is preferably the range of 2mm~25mm.First spray head Main body 41, second spray head main body 42 length L be preferably the range of 10mm~100mm.Nozzle head 411 export side wall 412, with The included angle A of the tube wall 413 of first spray head main body 41 or second spray head main body 42 is modified to 95 degree~170 degree by known 90 degree.

The detailed content of the utility model difference embodiment presented below, definitely to illustrate the utility model, however The utility model is not limited to following embodiments.

Referring to FIG. 3, Fig. 3 indicates the flow chart of the nozzle head improvement of depositing system.As shown in figure 3, the spray of depositing system The process of mouth improvement includes step S1, step S2 and step S3.Firstly, step S1 is carried out, reference flow rate information and deposition system System information.Flow rate information includes the flow velocity for the first gas that chemically substance transfer module 50 is learnt and the flow velocity of second gas. Depositing system information includes the size of substrate temperature, load plate, substrate.

Then, step S2 is carried out, with reference to stoichiometric parameter.Stoichiometric parameter be the institute of chemical substance transfer module 50 according to According to gas phase reaction mechanism, the parameter of surface reaction mechanism and flow field mechanism.

Finally, carrying out step S3, converges after whole aforementioned all information and parameter, carry out the improvement design of nozzle head.

The foregoing is merely the preferred embodiment of the utility model, the interest field that is not intended to limit the utility model； Above description simultaneously, should can be illustrated and implement for the special personage of correlative technology field, therefore other are practical without departing from this The lower equivalent change or modification completed of novel disclosed spirit, should be included in claim.

Claims (9)

1. a kind of depositing system for improveing nozzle head characterized by comprising

Reaction chamber；

Supporting part is configured in the reaction chamber, has the support base connecting with the reaction chamber and to carry lining The load plate at bottom；

Heater is configured at below the load plate, to the silicon；

Gas distribution assembly configures above relative to the supporting part, including multiple first spray head main bodys and multiple second sprays Head main body, each first spray head main body have the first gas passage and the spray for extending through the first spray head main body Mouth, each second spray head main body have the second gas channel for extending through the second spray head main body and the nozzle Head；

Chemical substance transfer module is connect, by chemical substance with the first gas passage and the second gas channel It is transferred to the reaction chamber；And

Heat exchange module is connected to the wall and the gas distribution assembly of the reaction chamber, for regulating and controlling the reaction chamber And the temperature of the gas distribution assembly.

2. the depositing system of improvement nozzle head as described in claim 1, which is characterized in that the chemical substance includes that metal has Machine precursor gas, V race's gas, carrier gas, cleaning gas or clean gas.

3. the depositing system of improvement nozzle head as described in claim 1, which is characterized in that further include sensor, be configured at institute It states below load plate, to monitor the substrate temperature.

4. the depositing system of improvement nozzle head as described in claim 1, which is characterized in that the chemical substance transfer module is more Include:

First gas source of supply is coupled to the first spray head main body, first gas is passed through the first gas and is led to Road；And

Second gas source of supply is coupled to the second spray head main body, second gas is passed through the second gas and is led to Road.

5. the depositing system of improvement nozzle head as claimed in claim 4, which is characterized in that the improvement of the nozzle head is foundation The flow velocity of the first gas and the second gas and design.

6. the depositing system of improvement nozzle head as described in claim 1, which is characterized in that the chemical substance transfer module is Regulate and control according to gas phase reaction mechanism, surface reaction mechanism and flow field mechanism.

7. the depositing system of improvement nozzle head as claimed in claim 6, which is characterized in that the improvement of the nozzle head is foundation The gas phase reaction mechanism, the surface reaction mechanism and the flow field mechanism and design.

8. the depositing system of the improvement nozzle head as described in claim 5 or 7 any one, which is characterized in that the nozzle head Improvement is improved by the side wall of the nozzle head, with the angle of the tube wall of the first spray head main body or the second spray head main body At 95 degree~170 degree.

9. the depositing system of improvement nozzle head as claimed in claim 8, which is characterized in that the first spray head main body and described The caliber of second spray head main body is the range of 2mm~25mm.