CN109837526A - A kind of film deposition equipment and cleaning method - Google Patents
A kind of film deposition equipment and cleaning method Download PDFInfo
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- CN109837526A CN109837526A CN201711187587.1A CN201711187587A CN109837526A CN 109837526 A CN109837526 A CN 109837526A CN 201711187587 A CN201711187587 A CN 201711187587A CN 109837526 A CN109837526 A CN 109837526A
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Abstract
The invention discloses a kind of film deposition equipments, it include: reaction chamber, the interior pedestal being equipped with for placing substrate, gas spray is equipped with above pedestal, gas spray is equipped with the subaisle for being passed through the main channel of precursor A into reaction chamber and for being passed through precursor B into reaction chamber, surround around pedestal and is equipped with gas uniform flow grid；Reaction chamber connects dry pump by vacuum evacuation pipeline；Further include: flushing channel is set on gas spray, and the upper end of flushing channel is connected to purge gas source, and lower end is by the way that inside purge gas outlet reaction chamber, purge gas discharge ring is obliquely installed around substrate and to its outside.Equipment effective rate of utilization and quality of forming film can be improved in the present invention.The invention also discloses a kind of cleaning methods of film deposition equipment.
Description
Technical field
The present invention relates to semi-conductor device technology fields, more particularly, to a kind of film deposition equipment and cleaning method.
Background technique
In recent years, semiconductor device development is rapid, is related to semiconductor, integrated circuit, solar panel, plane and shows
The fields such as device, microelectronics, light emitting diode, and these devices are mainly different by several layers of material thickness formed on a substrate
Film composition.Wherein Al2O3 thin-film material with its technical maturity, film-forming temperature is low, insulation resistance is good, material translucency is high,
Good conductivity, excellent barrier properties and heat-resisting quantity are adulterated, is widely applied in these areas.Such as in transparent conductive oxygen
Compound film (TCO) glass art incorporation aluminium oxide (Al2O3) will be greatly improved its electric conductivity and resistance in zinc oxide (ZnO)
High-temperature behavior；In high density capacitor field, aluminium oxide can make dielectric layer；In large scale integrated circuit field, aluminium oxide can be made
Barrier layer etc..
Existing atomic layer deposition (ALD) device structure generally comprises reaction chamber and its associated pipe.Wherein, reaction chamber
Interior is equipped with the heating pedestal for placing substrate, surround around pedestal and is equipped with gas uniform flow grid；Gas is equipped with above pedestal to spray
Head is drenched, gas spray is equipped with main channel from precursor to reaction chamber and subaisle for being passed through；Under reaction chamber
End is connect by dry pump with vacuum evacuation pipeline, and Vacuum exhaust tube road can be equipped with gate valve or/and butterfly valve.
However, applying above-mentioned atomic layer deposition apparatus, and using the technique of trimethyl aluminium and water reaction growth aluminium oxide
In cyclic process, the positions such as substrate, uniform flow grid, chamber inner wall, vacuum evacuation pipeline, dry pump, gate valve, butterfly valve all can be with preceding body
Precursor reactant source trimethyl aluminium and water contact.Therefore substrate, uniform flow grid, chamber inner wall, vacuum evacuation pipeline, dry pump, gate valve, butterfly
The positions such as valve can all grow aluminium oxide.The alpha-alumina crystals of these growns are metamict crystals, and form tiny crystal
Particle.With the increase of growth heat, the quantity and thickness for forming metamict crystals increase；When the bonding force between crystal grain
Less than crystal grain gravity when, crystal grain will fall off.Wherein, the particle at plate valve sealing surface and sealing ring, meeting
Cause gate valve that cannot seal, influences technique；Particle at butterfly valve seal face and sealing ring will lead to and cannot seal and pressure control
Inaccurate problem, influences technique；It is stuck that particle in dry pump will lead to dry pump, to influence technique；In chamber inner wall and very
The particle of empty pipeline inner wall will cause substrate grain defect.Therefore alumina particle, film existing for above-mentioned zone are eliminated especially
It is important.
Current maintenance mode can only the part to growing film carry out except film process.Wherein, to cavity maintenance, need by
Chamber cooling, removes part, is sent to corresponding cleaning producer and is cleaned；Pipeline is safeguarded, needs to break pipeline, uses acid solution
Cleaning；Maintenance for dry pump needs dry pump sending back to producer.Wasted in maintenance process a large amount of manpower, financial resources and when
Between, it causes damages.
To sum up, the prior art has the disadvantage in that
1) equipment needs periodic maintenance, maintenance period length and heavy workload, reduces utilization rate of equipment and installations.
2) alumina particle and film influence the sealing of gate valve.
3) alumina particle and film influence the leakproofness and control pressure of butterfly valve.
4) alumina particle and film make dry pump have stuck phenomenon.
5) existing aluminum oxide film increases substrate grain problem in chamber, vacuum line and dry pump.
Therefore, it is necessary to design a kind of device and method for eliminating alumina particle, film, to solve the above problems.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of film deposition equipment and cleaning are provided
Method.
To achieve the above object, technical scheme is as follows:
The present invention provides a kind of film deposition equipments, comprising: reaction chamber, the interior pedestal being equipped with for placing substrate,
Gas spray is equipped with above the pedestal, the gas spray is equipped with for being passed through precursor A's into reaction chamber
Main channel and subaisle for being passed through from precursor B to reaction chamber, around being equipped with gas uniform flow grid around the pedestal；
The reaction chamber connects dry pump by vacuum evacuation pipeline；Further include: flushing channel is set on the gas spray, and
The upper end of the flushing channel is connected to purge gas source, and lower end passes through inside purge gas outlet reaction chamber, described
Purge gas discharge ring is obliquely installed around the substrate and to its outside.
Preferably, the purge gas outlet is multiple stomatas or continuous air gap.
Preferably, substrate described in surrounded floor projection region overlay is exported as the purge gas.
Preferably, even gas cavity is equipped in the gas spray, the lower end of the flushing channel is empty by the even gas
Chamber and the purge gas outlet.
Preferably, the susceptor edges surface is equipped with protection baffle ring.
Preferably, the upper end of the main channel is separately connected precursor A pipeline and the first purge gas pipeline, described secondary logical
The upper end in road is separately connected precursor B pipeline and the second purge gas pipeline, and the upper end of the flushing channel is separately connected cleaning
Gas piping and third purge gas pipeline.
Preferably, the precursor A pipeline is equipped with the first valve, and the first purge gas tube road is equipped with the second valve
Door, the precursor B pipeline are equipped with third valve, and the second purge gas tube road is equipped with the 4th valve, the cleaning
Gas piping is equipped with the 5th valve, and the third purge gas tube road is equipped with the 6th valve.
Preferably, the Vacuum exhaust tube road is equipped with gate valve and/or butterfly valve.
The present invention also provides a kind of cleaning methods of film deposition equipment, comprising the following steps:
Step S01: the precursor A of certain flow is passed through into reaction chamber by main channel, precursor A is made to be adsorbed on lining
Bottom surface, and related it is adsorbed on reaction chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall
On；Meanwhile the third purge gas that certain flow is passed through into reaction chamber is exported by the purge gas of flushing channel；
Step S02: switching the first purge gas for being passed through certain flow by main channel into reaction chamber, anti-to blow away
Answer precursor A unadsorbed on chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall；
Step S03: main channel is closed, excessive precursor B is passed through into reaction chamber by subaisle, makes precursor B
React the expected deposition film of generation with the precursor A for being adsorbed on substrate surface, it is related be adsorbed on reaction chamber inner wall, gas
Precursor A reaction on uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall generates unexpected deposition film；
And excessive precursor B is made to be adsorbed on reaction chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or do
It pumps on inner wall；
Step S04: switched by subaisle into reaction chamber and be passed through the second purge gas；Meanwhile passing through flushing channel
Purge gas export into reaction chamber switching and be passed through purge gas, so that purge gas and unexpected deposition film is met simultaneously
Reaction, and make reaction product is heated to be sublimed into gas, it is discharged with dry pump.
Preferably, before step S01, further includes:
Step S001: the second purge gas is passed through into reaction chamber by subaisle and carries out chamber prepurge；
Step S002: stop chamber prepurge, all inlet channels of reaction chamber are closed, by dry pump to reaction chamber
Carry out dry tap.
Preferably, the precursor A is trimethyl aluminium, and the precursor B is steam, and the purge gas includes chlorination
Hydrogen, hydrogen bromide or boron chloride.
Preferably, further includes: reaction chamber, vacuum evacuation pipeline and dry pump are heated.
It preferably, is respectively to carry with inert gas when being passed through precursor A precursor B and purge gas into reaction chamber
Gas carries it.
Preferably, when being passed through purge gas into reaction chamber, the mixed gas mass ratio of the carrier gas and purge gas
Example is 1:0.5-1:20.
Preferably, the mixed gas mass ratio of the carrier gas and purge gas is reduced with the continuity of scavenging period.
The invention has the following advantages that
1) online membrane removal can be carried out to reaction chamber in normal deposition process, and need not begins to speak to drop chamber
Temperature removes part, and is sent to corresponding producer and is cleaned and safeguarded, thus improves equipment effective rate of utilization.
2) it can effectively avoid the generation particle, film in chamber, vacuum line and dry pump, ensure that valve tightness and control
Pressing pressure, to improve quality of forming film.
Detailed description of the invention
Fig. 1 is a kind of film deposition equipment structural schematic diagram of a preferred embodiment of the present invention；
Fig. 2 is gas spray structural schematic diagram in Fig. 1；
1. reaction chamber in figure, 2. vacuum evacuation pipelines, 3. heating pedestals, 4. substrates, 5. upper covers, 6. gas uniform flow grid,
7. the second purge gas pipeline, 8. the 4th valves, 9. third valves, 10. precursor B pipelines, 11. first valves, 12. precursors
A pipeline, 13. first purge gas pipelines, 14. second valves, 15. main channels, 16. subaisles, 17. third purge gas tubes
Road, 18. the 6th valves, 19. protection baffle rings, 20. dry pumps, 21. gate valves, 22. butterfly valves, 23. gas sprays, 24. purgative gas
Body outlet, 25. purge gas pipelines, 26. the 5th valves, 27. flushing channels, 28. even gas cavitys.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It should be noted that in following specific embodiments, when describing embodiments of the invention in detail, in order to clear
Ground indicates structure of the invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should be avoided in this, as limitation of the invention to understand.
In specific embodiment of the invention below, referring to Fig. 1, Fig. 1 is one kind of a preferred embodiment of the present invention
Film deposition equipment structural schematic diagram.As shown in Figure 1, the present invention provides a kind of film deposition equipment, depositing device be can be
Atomic layer deposition (ALD) equipment or other applicable depositing devices.Film deposition equipment includes reaction chamber 1 and its related process
Pipeline, and including flushing channel 27 and its associated pipe.
Please refer to Fig. 1.Heating pedestal 3 is equipped in reaction chamber 1, the upper surface of pedestal 3 is for placing substrate 4；Pedestal 3
Driving motor can be connected by passing through the shaft in 1 bottom centre hole of chamber.Gas spray 23 is equipped with above pedestal；Gas shower
First 23 are equipped with the main channel 15 for being passed through precursor A into reaction chamber, and for being passed through preceding body into reaction chamber
The subaisle 16 of body B.Main channel, subaisle are located substantially at the medium position of gas spray.Around equipped with gas around pedestal 3
Uniform flow grid 6.
The upper end of reaction chamber 1 is connect with upper cover 5 and gas spray 23, the lower end of reaction chamber 1 and Vacuum exhaust tube
Road 2 connects, and vacuum evacuation pipeline 2 connects dry pump 20 again.Gate valve 21 or butterfly valve 22 can be equipped with by being vacuum-evacuated on pipeline 2, or
It is equipped with gate valve and butterfly valve simultaneously.
The upper end of main channel 15 is stretched out by 23 upper surface of gas spray, and can be separately connected precursor A pipeline 12 and the
One purge gas pipeline 13；It the lower end of main channel can be with gas spray lower surface flush.The upper end of subaisle 16 is also by gas
23 upper surface of body spray head is stretched out, and is separately connected precursor B pipeline 10 and the second purge gas pipeline 7；The lower end of subaisle
It can also be with gas spray lower surface flush.
The first valve 11 can be equipped on precursor A pipeline, the first purge gas tube road can be equipped with the second valve 14；Preceding body
Third valve 9 can be equipped on body B pipeline, the second purge gas tube road can be equipped with the 4th valve 8.
Please refer to Fig. 1.Flushing channel 27 is also set on gas spray 23, and is located at the side of main channel, subaisle.Clearly
The upper end for washing channel 27 is stretched out by 23 upper surface of gas spray, and can be separately connected purge gas pipeline 25 and third purge gass
Body pipeline 17；Purge gas piping connection is to purge gas source.The lower end of flushing channel 27 is anti-by purge gas outlet
Answer chamber interior；Purge gas discharge ring is obliquely installed around substrate and to its outside.The 5th valve can be equipped on purge gas pipeline
Door 26, third purge gas tube road can be equipped with the 6th valve 18.
Please refer to Fig. 2.As a preferred embodiment, purge gas outlet 24 can be multiple stomatas, and stomata is preferably
Circular hole；Alternatively, purge gas outlet 24 can also use continuous air gap form, air gap can be narrow slit.Also, purge gas goes out
Mouth 24 is arranged with a vertical acute angle, i.e. the airflow direction of purge gas outlet and process gas (precursor A/ precursor B)
At an acute angle, this acute angle is preferably 45 °.
As a preferred embodiment, the floor projection region overlay substrate surrounded by purge gas outlet 24.
The even gas cavity 28 of annular can be also equipped in gas spray 23, the lower end of flushing channel 27 passes through even gas cavity 28
Purge gas outlet 24 is connected, purge gas is enable uniformly to spray.
Also it can be equipped with ring-shaped step in 3 edge surface of heating pedestal, for installing the protection baffle ring 19 of annular on step,
Further to protect 4 surface of substrate not touch the purge gas that inclination is passed through chamber.Protect baffle ring material can for stainless steel,
Nickel, high temperature polymeric materials etc., preferably stainless steel.
Using the above-mentioned film deposition equipment of the present invention, reaction chamber can be carried out in normal deposition process
Online membrane removal, and need not begin to speak chamber cooling, remove part, and be sent to corresponding producer and cleaned and safeguarded, thus mention
High equipment effective rate of utilization.
The present invention also provides a kind of cleaning methods based on above-mentioned film deposition equipment, with (preceding using trimethyl aluminium
Body A) and water (precursor B) reaction growth aluminium oxide process flow for be illustrated, purge gas by taking hydrogen chloride as an example, carry
Gas/purge gas (the invention is not limited thereto) by taking nitrogen as an example, comprising the following steps:
Step S01: the first valve 11 is opened, is passed through and is contained into reaction chamber 1 by precursor A pipeline 12, main channel 15
There is the nitrogen (nitrogen is carrier gas) of the trimethyl aluminium of certain flow, the trimethyl aluminium in mixed gas made to be adsorbed on 4 surface of substrate,
And it is related be adsorbed on 1 inner wall of reaction chamber, 6 surface of gas uniform flow grid, vacuum evacuation 2 inner wall of pipeline and 20 inner wall of dry pump on (or
Person is to be adsorbed on reaction chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall (including gate valve, butterfly valve) or dry pump
On inner wall)；Meanwhile the 6th valve 18 is opened, pass through third purge gas pipeline 17, flushing channel 27 and purge gas outlet 24
The third purge gas nitrogen of certain flow is passed through into reaction chamber 1.The place for having trimethyl aluminium to adsorb is also to have source gas
The place of contact and the place of alumina growth.
In this step, reaction chamber 1, vacuum evacuation pipeline 2 and dry pump 20 can be heated in advance, and set chamber 1
Pressure is 2mtorr-10000mtorr, preferably 1000mtorr, setting 1 temperature of chamber is, for example, 300 DEG C, vacuum evacuation pipeline 2,
The temperature of dry pump 20 is 50-180 DEG C, preferably 130-150 DEG C.
Nitrogen mixed gas duration of ventilation containing trimethyl aluminium can be 0.1-50sec, preferably 2sec, and flow is
1000sccm.Third purge gas nitrogen flow is, for example, 1000sccm.
Step S02: the first valve 11 is closed, the second valve 14 is opened simultaneously, precursor A pipeline 12 is switched to first and is blown
13 tunnel of flue is swept, certain flow is passed through into reaction chamber 1 by the first purge gas pipeline 13, main channel 15 first is blown
Scavenging body nitrogen, to blow away on reaction chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall
Unadsorbed trimethyl aluminium.
In this step, the first purge gas nitrogen purge time can be 0.1-50sec, preferably 0.2sec, and flow can be
100-2000sccm, preferably 1000sccm.
Step S03: the second valve 14 is closed to close main channel 15 and opens simultaneously third valve 9, is managed by precursor B
Road 10, subaisle 16 are passed through the excessive nitrogen (nitrogen is carrier gas) containing steam (precursor B) into reaction chamber 1, make to mix
Close gas in steam react with the trimethyl aluminium for being adsorbed on substrate surface generate expected from aluminum oxide film, it is related be adsorbed on
Trimethyl aluminium on reaction chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall, which reacts, to be generated
Unexpected aluminum oxide film.Because steam is excessive, so as to can be adsorbed on reaction chamber inner wall, gas even for excessive steam
It flows stand-by on grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall.
In this step, the duration of ventilation when nitrogen containing steam enters chamber can be 2s.
Step S04: closing third valve 9, opens the 4th valve 8, precursor B pipeline 10 is switched to the second purge gas
Pipeline 7 is passed through the second purge gas nitrogen into reaction chamber 1 by the second purge gas pipeline 7, subaisle 16；Meanwhile it closing
The 6th valve 18 is closed, the 5th valve 26 is opened, third purge gas pipeline 17 is switched into purge gas pipeline 25, passes through cleaning
Gas piping 25, flushing channel 27 and purge gas outlet 24 are passed through containing dry hydrogen chloride (cleaning into reaction chamber 1
Gas) nitrogen (nitrogen is carrier gas), be dissolved in the hydrogen chloride in mixed gas and be adsorbed on reaction chamber inner wall, gas uniform flow
Grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall on excessive steam in form hydrochloric acid, then, hydrochloric acid again with this
Unexpected aluminum oxide film meets and reacts on position, generates reaction product alchlor, and alchlor is heated i.e.
It is sublimed into gas, is discharged with dry pump.
In this step, it can be 0.1s-1s that nitrogen and dry hydrogen chloride gas, which are passed through the time,.Then flushing channel stops,
Complete a clean cycle.
In the above process, trimethyl aluminium is reacted with excessive steam, generates aluminium oxide and methane gas, reaction equation (1):
2Al(CH3)3+3H2O=2Al2O3+6CH4 (1)
Excessive Vapor adsorption meets dry hydrogen chloride and generates salt in chamber, in vacuum evacuation pipeline, on dry pump inner wall
Acid, reaction equation (2):
HCl+H2O→H++Cl- (2)
Hydrochloric acid and oxidation reactive aluminum generate water and alchlor, reaction equation (3):
Al2O3+HCl→AlCl3+H2O (3)
Also, due to the specific position and angle design of purge gas of the present invention outlet, nitrogen and dry hydrogen chloride gas
Body does not flow through substrate surface, so the above process will not impact the aluminum oxide film on substrate surface.
When being passed through the mixed gas of nitrogen and dry HCl into reaction chamber as purge gas, nitrogen and drying
The mixed gas mass ratio of HCl is 1:0.5-1:20, preferably 1:10.Also, the mixed gas quality of nitrogen and dry HCl
Ratio can be reduced with the continuity of scavenging period, such as can drop to 1:20.
Before above-mentioned steps S01, reaction chamber can also be pre-processed, comprising:
Step S001: the second purge gas is passed through into reaction chamber 1 by the second purge gas pipeline 7, subaisle 16
Nitrogen carries out chamber prepurge；
Step S002: stop chamber prepurge, closing reaction chamber includes main channel 15, subaisle 16, flushing channel 27
All inlet channels Deng including carry out dry tap to reaction chamber by dry pump 20.
The time of dry tap may be, for example, 1 hour.Meanwhile it can start to carry out reaction chamber, vacuum evacuation pipeline and dry pump
Heating in advance, and setting 1 pressure of chamber is, for example, 1000mtorr, setting 1 temperature of chamber is, for example, 300 DEG C, vacuum evacuation pipeline
2 temperature are, for example, 150 DEG C.
As preferred embodiment, purge gas may also include hydrogen bromide or boron chloride.
Other inert gases such as argon gas etc. can be used in carrier gas or purge gas.
Using the present invention is based on the cleaning method of above-mentioned film deposition equipment, can effectively avoid in chamber, vacuum line
And particle, film are generated in dry pump, it ensure that valve tightness and control pressure, to improve quality of forming film.
Above is merely a preferred embodiment of the present invention, the scope of patent protection that embodiment is not intended to limit the invention,
Therefore all to change with equivalent structure made by specification and accompanying drawing content of the invention, it similarly should be included in of the invention
In protection scope.
Claims (15)
1. a kind of film deposition equipment, comprising: reaction chamber, the interior pedestal being equipped with for placing substrate, the pedestal top are set
There is gas spray, the gas spray is equipped with for being passed through the main channel of precursor A into reaction chamber and being used for
It is passed through the subaisle of precursor B into reaction chamber, is surround around the pedestal and is equipped with gas uniform flow grid；The reaction chamber is logical
Cross vacuum evacuation pipeline connection dry pump；
It is characterized by further comprising: flushing channel, is set on the gas spray, and the upper end connection of the flushing channel
To purge gas source, lower end is by the way that inside purge gas outlet reaction chamber, the purge gas discharge ring is around the lining
Bottom is simultaneously obliquely installed to its outside.
2. film deposition equipment according to claim 1, which is characterized in that purge gas outlet be multiple stomatas or
Continuous air gap.
3. film deposition equipment according to claim 1, which is characterized in that export surrounded water by the purge gas
Flat view field covers the substrate.
4. film deposition equipment according to claim 1, which is characterized in that it is empty to be equipped with even gas in the gas spray
The lower end of chamber, the flushing channel passes through the even gas cavity and the purge gas outlet.
5. film deposition equipment according to claim 1, which is characterized in that the susceptor edges surface is equipped with protection gear
Ring.
6. film deposition equipment according to claim 1, which is characterized in that the upper end of the main channel is separately connected preceding body
Body A pipeline and the first purge gas pipeline, the upper end of the subaisle are separately connected precursor B pipeline and the second purge gas tube
Road, the upper end of the flushing channel are separately connected purge gas pipeline and third purge gas pipeline.
7. film deposition equipment according to claim 6, which is characterized in that the precursor A pipeline is equipped with the first valve
Door, first purge gas tube road are equipped with the second valve, and the precursor B pipeline is equipped with third valve, and described second
Purge gas tube road is equipped with the 4th valve, and the purge gas pipeline is equipped with the 5th valve, the third purge gas tube
Road is equipped with the 6th valve.
8. film deposition equipment according to claim 1, which is characterized in that the Vacuum exhaust tube road is equipped with gate valve
And/or butterfly valve.
9. a kind of cleaning method of film deposition equipment, which comprises the following steps:
Step S01: the precursor A of certain flow is passed through into reaction chamber by main channel, precursor A is made to be adsorbed on substrate table
Face, and it is related be adsorbed on reaction chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall on；Together
When, the third purge gas that certain flow is passed through into reaction chamber is exported by the purge gas of flushing channel；
Step S02: switch the first purge gas for being passed through certain flow, into reaction chamber by main channel to blow away reaction chamber
Unadsorbed precursor A on chamber interior walls, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall；
Step S03: closing main channel, be passed through excessive precursor B into reaction chamber by subaisle, makes precursor B and inhales
The precursor A reaction for being attached to substrate surface generates expected deposition film, it is related be adsorbed on reaction chamber inner wall, gas uniform flow
Precursor A reaction on grid surface, vacuum evacuation pipeline inner wall and/or dry pump inner wall generates unexpected deposition film；And make
Excessive precursor B is obtained to be adsorbed in reaction chamber inner wall, gas uniform flow grid surface, vacuum evacuation pipeline inner wall and/or dry pump
On wall；
Step S04: switched by subaisle into reaction chamber and be passed through the second purge gas；Meanwhile passing through the clear of flushing channel
It washes gas vent and switches into reaction chamber and be passed through purge gas, purge gas and unexpected deposition film is made to meet and anti-
It answers, and makes reaction product is heated to be sublimed into gas, be discharged with dry pump.
10. the cleaning method of film deposition equipment according to claim 9, which is characterized in that before step S01, also wrap
It includes:
Step S001: the second purge gas is passed through into reaction chamber by subaisle and carries out chamber prepurge；
Step S002: stopping chamber prepurge, close all inlet channels of reaction chamber, is carried out by dry pump to reaction chamber
Dry tap.
11. the cleaning method of film deposition equipment according to claim 9, which is characterized in that the precursor A is front three
Base aluminium, the precursor B are steam, and the purge gas includes hydrogen chloride, hydrogen bromide or boron chloride.
12. the cleaning method of film deposition equipment according to claim 9, which is characterized in that further include: to reaction chamber
Room, vacuum evacuation pipeline and dry pump are heated.
13. the cleaning method of film deposition equipment according to claim 9, which is characterized in that be passed through into reaction chamber
Precursor A precursor B and when purge gas, respectively carries it using inert gas as carrier gas.
14. the cleaning method of film deposition equipment according to claim 13, which is characterized in that be passed through into reaction chamber
When purge gas, the mixed gas mass ratio of the carrier gas and purge gas is 1:0.5-1:20.
15. the cleaning method of film deposition equipment according to claim 14, which is characterized in that the carrier gas and purgative gas
The mixed gas mass ratio of body is reduced with the continuity of scavenging period.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111471980A (en) * | 2020-04-15 | 2020-07-31 | 北京北方华创微电子装备有限公司 | Reaction chamber suitable for remote plasma cleaning, deposition equipment and cleaning method |
| CN113000487A (en) * | 2021-02-24 | 2021-06-22 | 理想晶延半导体设备(上海)股份有限公司 | Tubular cleaning equipment and photovoltaic coating system |
| CN115354304A (en) * | 2022-08-25 | 2022-11-18 | 拓荆科技(上海)有限公司 | Semiconductor reaction chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110256692A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
| CN202246851U (en) * | 2011-09-05 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Deposition cavity |
| CN203284460U (en) * | 2013-06-19 | 2013-11-13 | 京东方科技集团股份有限公司 | Back plate used for cleaning process cavity and cleaning device of process cavity |
| CN203382817U (en) * | 2013-07-18 | 2014-01-08 | 胡兵 | Organometallic chemical vapor deposition device |
| CN105200396A (en) * | 2014-06-18 | 2015-12-30 | 中微半导体设备(上海)有限公司 | Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof |
-
2017
- 2017-11-24 CN CN201711187587.1A patent/CN109837526A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110256692A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
| CN202246851U (en) * | 2011-09-05 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Deposition cavity |
| CN203284460U (en) * | 2013-06-19 | 2013-11-13 | 京东方科技集团股份有限公司 | Back plate used for cleaning process cavity and cleaning device of process cavity |
| CN203382817U (en) * | 2013-07-18 | 2014-01-08 | 胡兵 | Organometallic chemical vapor deposition device |
| CN105200396A (en) * | 2014-06-18 | 2015-12-30 | 中微半导体设备(上海)有限公司 | Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof |
Cited By (4)
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