CN105200395B - Air inlet and cooling device for MOCVD device - Google Patents
Air inlet and cooling device for MOCVD device Download PDFInfo
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- CN105200395B CN105200395B CN201410272606.0A CN201410272606A CN105200395B CN 105200395 B CN105200395 B CN 105200395B CN 201410272606 A CN201410272606 A CN 201410272606A CN 105200395 B CN105200395 B CN 105200395B
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Abstract
Air inlet for MOCVD device and cooling device in the present invention, provided with the spray head positioned at reaction chamber inner top, the air induction conduit of organic metal gas is located in the air inlet of separation gas, separation gas is formed the air-flow of heavy curtain shape and be looped around the organic metal gas periphery of conveying, so as to which the organic metal gas just sprayed and hydride gas be separated, suppress both premature reactions and produce parasitic particle；The present invention is also prevented from parasitic particle formation near the air inlet of inlet duct bottom surface；Making the organic metal gas of conveying can be uniformly distributed with hydride gas on pedestal and on each substrate, it is ensured that film growth quality, lift film growth rate.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, more particularly to a kind of air inlet and cooling device for MOCVD device.
Background technology
At present, at Metalorganic Chemical Vapor Deposition (hereinafter referred to as MOCVD), II or III Organometallic are closed
In the gas of thing, the reaction chamber that MOCVD device is introduced with the hydride gas containing IV or V group element, make both mixed gas
When being sent to the substrate surface being positioned on reaction chamber inner bottom part pedestal, can occur pyrolysis in substrate surface, so that outside
Epitaxial growth formation compound monocrystal film.
As shown in Figure 1 and Figure 2, in a kind of inlet duct that US2010/0143588A1 is provided, provided with the top in reaction chamber
The gas distribution grid in portion, it is extended in parallel and the distribution of alternatively distributed elongate tubular gas distribution elements first gas comprising multiple
Element, second gas distributed component.First reaction source gas is group V hydride (ammonia NH3) and carrier gas (hydrogen H2Or nitrogen
N2) mixed gas, conveyed by the long strip type air inlet of first gas distributed component, form strip, the first of curtain shape
Reacting gas air-flow.Second reaction source gas is the mixed gas of organic metal gas (MO, Metal-Organic) and carrier gas,
Organic metal gas are, for example, trimethyl gallium (i.e. (CH3)3Ga, abbreviation TMG or TMGa), trimethyl aluminium (i.e. [(CH3)3Al]2, letter
Claim TMA or TMAl) etc., conveyed by one group of air admission hole of second gas distributed component, form row pattern the second reacting gas air-flow.
Meanwhile, between also having between the first gas distributed component and second gas distributed component that carrier gas is distributed by adjacent gas all the way
Gap convey, formed interval curtain shape air-flow be interspersed in foregoing first reacting gas air-flow and the second reacting gas air-flow it
Between.
As shown in Figure 1, Figure 2, Figure 3 shows, above-mentioned inlet duct has the shortcomings that following：On the edge of the inlet duct, circumference
Diverse location there is different gas mixing state and gas flow, easily form vortex；Moreover, after inlet duct ejection
The distributed areas of two kinds of reaction source gas are alternatively distributed long strip type, non-centrosymmetry so that in substrates of different or same base
On the diverse location of piece, the skewness of two kinds of reaction source gas, causes most particularly between central area and fringe region
The film that deposition is formed eventually is uneven, influences product quality.In addition, being difficult to avoid that two kinds of reaction source gas exist in the inlet duct
The problem of premature reaction forms GaN, AlN parasitism particle before reaching substrate surface, parasitic particle can be attached in reaction chamber dirty
Dyeing equipment, falls the influence film growthform on substrate at random, a part of organic metal gas is expended in the parasitic particle of growth
Process, cause film growth rate to decline.
US2009/0169744A1 is provided in one embodiment of inlet duct, and inlet duct includes being used for conveying in mixing
Hydride gas and carrier gas first gas diffusion chamber, diffusion chamber bottom includes first gas conduit, for conveying mixing
Organic metal gas and carrier gas second gas diffusion chamber, diffusion chamber bottom include second gas conduit, the arrangement of both gas conduits
In column, in addition to for conveying purge gas (such as Ar, N2, He etc.) third gas diffusion chamber, wrap on diffusion chamber bottom
Multiple openings are included, these opening arrays in a row and are arranged between the first air induction conduit and the second air induction conduit, for isolating
A cooling jacket can also be installed below two kinds of reacting gas third gas diffusion chambers, cooling agent is flowed in cooling jacket
It is dynamic, the temperature of inlet duct is maintained at proper level.
However, by taking above-mentioned first embodiment as an example, the inlet duct is not only complicated, and the bottom surface of the inlet duct
For plane, there are many regions there is no gas to flow through in the plane, easily form vortex and upset parasitic particle, cause parasitic particle attached
And be difficult to remove in the bottom surface of inlet duct.Also, the outlet of third gas diffusion chamber lower surface is away from two kinds of reaction source gas
Outgoing position, thus be difficult to play and separate two kinds of reaction source gas or will parasitic of attachment via the purge gas of outlet conveying
The effect that grain is removed.
The content of the invention
It is an object of the invention to provide a kind of air inlet for MOCVD device and cooling device, by organic metal gas with
Hydride gas is separated, and is suppressed both premature reactions and is produced parasitic particle；Prevent parasitic particle formation in inlet duct bottom surface
Near air inlet；The organic metal gas of conveying are made uniformly to divide on pedestal and on each substrate with hydride gas
Cloth.
In order to achieve the above object, the technical scheme is that providing a kind of air inlet and cooling for MOCVD device
Device, provided with the spray head positioned at reaction chamber inner top, wherein including：
Multiple reacting gas diffusion chambers being mutually isolated, the multiple reacting gas diffusion chamber includes polylith dividing plate, wherein
Multigroup gas conduit is provided with bottom baffles, reacting gas, multigroup gas conduit bag are passed through to reaction chamber by conduit
Include：
One group of first air induction conduit, for conveying organic metal gas in the reaction chamber to MOCVD device；
One group of second air induction conduit, for conveying hydride gas；The organic metal gas and hydride gas are by this
The carrier gas of showerhead delivery carries to the substrate surface of reaction chamber inner bottom part and carries out thin film deposition reaction；
Also include one piece of coldplate below multiple reacting gas diffusion chambers, the reacting gas diffusion chamber includes being located at
Include on separation gas diffusion chamber between bottom baffles and coldplate, the coldplate：
One group of first air inlet, for conveying separation gas into the reaction chamber；Each first air induction conduit point
It is not located among corresponding first air inlet, the heavy curtain that the separation gas for conveying the first air inlet is formed
Shape air-flow is looped around organic metal gas periphery, and the organic metal gas just sprayed and hydride gas are separated；And,
One group of second air inlet, respectively lower end bore are more than the funnel-form of upper end bore；
The lower ending opening of first air inlet and the second air inlet, the bottom surface of coldplate it is spaced and alternately point
Cloth；Each second air inlet is connected with corresponding second air induction conduit, will by second air inlet
Hydride gas and the mixed gas of carrier gas are conveyed into the reaction chamber.
Alternatively, first air induction conduit individually conveys organic metal gas, or conveying organic metal gas and load
The mixed gas of gas；
Second air induction conduit individually conveys hydride gas, or conveying hydride gas and the gaseous mixture of carrier gas
Body；
The separation gas of the first air inlet conveying, is carrier gas or purge gas or its mixed gas.
Alternatively, inside the spray head, the polylith dividing plate of multiple reacting gas diffusion chambers being mutually isolated includes
First dividing plate, second partition, the 3rd dividing plate；
The separation gas diffusion chamber formed between the coldplate and the 3rd dividing plate, is communicated to the institute opened up on the cooling plate
State the first air inlet and the second air inlet；
The the second reacting gas diffusion chamber formed between 3rd dividing plate and second partition is communicated to the second air induction conduit,
Second air induction conduit is inserted into corresponding second air inlet, the upper end of the second air inlet is centered around the second air induction conduit
Lower end periphery；
The the first reacting gas diffusion chamber formed between the second partition and the first dividing plate is communicated to the first air induction conduit,
First air induction conduit is interspersed in corresponding first air inlet.
Alternatively, in the coldplate of the spray head, each air inlet is avoided and the position of each gas passage in communication,
Pipeline provided with cooling but flow of media.
Alternatively, the side wall of second air inlet is provided with buffering area, the second air induction conduit connection described second
Reacting gas is passed through the buffering area by reacting gas diffusion chamber, and reacting gas flows into the second air inlet after buffering area.
Alternatively, the bottom of the closing of second air induction conduit is inserted into the second air inlet, and second conductance is entered at this
Some perforates are offered on the wall of pipe side to be used for conveying reacting gas.
Alternatively, the lower end position of first air inlet is less than the lower end position for being located in the first air induction conduit therein
Put.
Alternatively, second air inlet is side wall and the constant conical hopper structure of vertical direction angle.
Alternatively, second air inlet is biconial funnel structure, is first jiao comprising side wall and vertical direction angle
The epimere of degree, and side wall and the hypomere that vertical direction angle is second angle, first angle are less than second angle.
Alternatively, second air inlet is polyhedron funnel structure, and the terminal edge of second air inlet is polygon
Shape, side wall is provided with a plurality of rib.
Compared with prior art, the air inlet provided by the present invention for MOCVD device and cooling device, the advantage is that：
Gas passage is formed by spaced dividing plate in spray head in the present invention；Some air inlets are directly opened up
On the cooling plate, and coolant guiding channel lateral arrangement therebetween is made, to reduce the volume of whole equipment；Each air inlet uniformly divides
Cloth, is effectively improved the uniformity that on pedestal and gas is distributed on each substrate, so that ensure film growth quality, lifting film life
Long rate.
The air induction conduit of organic metal gas is located in the air inlet of separation gas in the present invention, enables separation gas
Enough form the air-flow of heavy curtain shape and be looped around organic metal gas periphery, so that by the organic metal gas just sprayed and hydride
Gas is separated, and is suppressed both premature reactions and is produced parasitic particle.
By expanding the end bore of some of air inlets in the present invention, for example, funnel-form is formed, to increase spray head
Bottom surface is arranged to the area of air inlet, and parasitic particle is blown away using the air-flow of air inlet, while effectively reducing showerhead bottom surface
Parasitic particle can adsorbable region area.
Pass through the side wall that some of air inlets are designed as to two sections and vertical side in the preferred embodiments of the present invention
To the different biconial funnel structure of angle, make the angle of the hypomere of close coldplate bottom surface bigger, to ensure in coldplate
Open up the mechanical strength after air inlet and coolant guiding channel simultaneously, and effectively reduce parasitic particle can adsorbable region face
Product.
Brief description of the drawings
Fig. 1, Fig. 2 and Fig. 3 are the side view and top view of the first existing inlet duct gas distributed effect；
Fig. 4 is the structural representation for the MOCVD device for setting air inlet of the present invention and cooling device；
Fig. 5 is the schematic diagram of air inlet of the present invention and the air inlet distribution of cooling device；
Fig. 6, Fig. 7 be the A-A ' of device of the present invention in the first embodiment to and B-B ' to sectional view；
Fig. 8, Fig. 9 be the C-C ' of device of the present invention in a second embodiment to and B-B ' to sectional view；
Figure 10 be the B-B ' of device of the present invention in the third embodiment to sectional view；
Figure 11 is that the second air inlet of coldplate in device of the present invention is the schematic diagram of polyhedron funnel structure；
Figure 12 be polyhedron funnel structure shown in Figure 11 an example A-A ' to sectional view；
Figure 13 be polyhedron funnel structure shown in Figure 11 another example B-B ' to sectional view.
Figure 14 is the air inlet distribution schematic diagram on the coldplate of device of the present invention；
Figure 15, Figure 16 be when the second air inlet is conical hopper structure in the present invention coldplate along A-A ' to and B-B ' to
Schematic diagram；
Figure 17, Figure 18 be when the second air inlet is biconial funnel structure in the present invention coldplate along A-A ' to and B-B ' to
Schematic diagram；
Figure 19 is the scale diagrams of a specific example of the enterprising gas port distribution of coldplate in the present invention；
Figure 20 is the scale diagrams of specific example when the second air inlet is biconial funnel structure in the present invention；
Figure 21 is the chemical reaction process schematic diagram in reaction chamber in the present invention；
Embodiment
As shown in figure 4, the inlet duct that the present invention is provided is a kind of spray head 800, it is arranged on MOCVD, and (metal is organic
Chemical vapor deposition) top in device reaction cavity 900, by the first air induction conduit 810 of setting, the second air induction conduit 820,
First air inlet 830, conveys organic metal gas, hydride gas, and both are carried to substrate into reaction chamber 900 respectively
920 surfaces carry out the carrier gas of thin film deposition reaction, while also by the carrier gas that is conveyed by the first air inlet 830 by organic metal gas
Body and hydride gas are spaced from each other, to prevent the too early reaction of the organic metal gas and hydride gas that have just sprayed in spray
Parasitic particle is produced near the air inlet of first 800 bottom surface.
As shown in figure 5, being additionally provided with one group of second air inlet 840, it exists with the respective opening of one group of first air inlet 830
The bottom surface of spray head 800 alternates, is uniformly distributed.Each second air induction conduit 820 is communicated to corresponding one second
Air inlet 840, makes the head end of the second air inlet 840 be centered around the end periphery of the second air induction conduit 820, by the second air inlet
840 by hydride gas and the mixed gas delivery of carrier gas to reaction chamber 900.Each first air induction conduit 810 be located in
Corresponding first air inlet 830 in, then the carrier gas conveyed by the first air inlet 830 forms the air-flow of heavy curtain shape, will be by
The organic metal gas of first air induction conduit 810 conveying and the hydrogenation conveyed by the air inlet 840 of the second air induction conduit 820 to the second
Thing gas is separated.In showerhead bottom surface, within the fringe region of pole, each first air inlet 830 is uniform by multiple (such as 4)
Second air inlet 840 of distribution is surrounded and with the plurality of second air inlet 840 apart from each equal, same second air inlet
840 are also surrounded and with the plurality of first air inlet 830 apart from equal by multiple first air inlets 830 that are uniformly distributed.
If the end of each air inlet is positioned at one end of the bottom surface of spray head 800, and the head end of each air inlet is to be located at
One end of corresponding gas passage is communicated in spray head 800.The end external diameter of first air induction conduit 810 in this example, less than circular
The end internal diameter of the first air inlet 830 on the outside of it, and both it is less than the end bore of the second air inlet 840.If second
When the end external diameter of air induction conduit 820 is less than the head end internal diameter of the second air inlet 840, it can make what the second air inlet 840 was conveyed
The hydride gas that carrier gas is enclosed in the conveying of the second air induction conduit 820 is outer and both are latter in the interior mixing of the second air inlet 840
Rise and be delivered to reaction chamber 900；If the end external diameter of the second air induction conduit 820 is equal to the head end internal diameter (i.e. two of the second air inlet 840
Person is fitted close) when, hydride gas that the second air induction conduit 820 is conveyed and the mixed gas of carrier gas can be made directly via the
Two air inlets 840 are conveyed to reaction chamber 900.
And in order to reduce accumulation of the parasitic particle in the bottom surface of spray head 800, can on the premise of each road gas flow is taken into account
By the bore for expanding each inlet end (such as expanding the second air inlet 840 and/or the first air inlet 830), will spray
First 800 bottom surface area as much as possible is opened up as air inlet.Thus, due to there is gas at the air inlet of the bottom surface of spray head 800
Flowing, parasitic particle is not easy attachment；And other areas of the bottom surface of spray head 800 in addition to air inlet are contracted by, can effectively it subtract
The influence of few parasitism particle attachment.It is shown in Figure 6, in example preferably, the second air inlet 840 is designed to that end bore is big
In the funnel-form of its head end bore.First air induction conduit 810, the second air induction conduit 820, the first air inlet 830 can be first and last
The consistent straight-tube shape in port footpath.
As shown in Figure 6, Figure 7, the described inside of spray head 800 is provided with the first dividing plate 851, second partition 852, the 3rd dividing plate
853 and coldplate 854, these plates are spaced apart in vertical direction.In this example, the first dividing plate 851 is near the top of spray head 800
Portion, and coldplate 854 is near the bottom of spray head 800.The first described air inlet 830 is directly opened up on coldplate 854
With the second air inlet 840；The position that each air inlet is also avoided in described coldplate 854 is provided with the cooling medium of cross direction profiles
Pipeline 850, makes cooling medium be circulated in pipeline 850, by the temperature control of spray head 800 in suitable scope.Coldplate 854
The third gas passage formed between the 3rd dividing plate 853, directly connects the first air inlet 830 and second on coldplate 854
Air inlet 840 is with delivery of carrier gas.The second gas passage formed between 3rd dividing plate 853 and second partition 852, is communicated to conduct
Second conduit 821 of the second air induction conduit 820 is to convey hydride gas；Second conduit 821 passes through third gas passage simultaneously
And be mutually not turned on the third gas passage, the end of second conduit 821 is inserted into the second air inlet on coldplate 854 afterwards
In mouth 840.The first gas passage formed between the dividing plate 851 of second partition 852 and first, has via the conveying of the first conduit 811
Machine metal gas；First conduit 811 through second gas passage, the 3rd dividing plate 853 and third gas passage and therewith not
Conducting, first conduit 811 is finally inserted in first air inlet 830 as the first air induction conduit 810.Preferably,
It is to make the terminal position of the first air inlet 830, the terminal position than the first air induction conduit 810 (the first conduit 811) is lower, i.e.
The bottom surface of the end correspondence coldplate 854 of first air inlet 830, and the end of the first conduit 811 is also not reaching to coldplate 854
Bottom surface so that the Mixed Zone of a carrier gas and organic metal gas is formed on bottom in the first air inlet 830.
As shown in Figure 8, Figure 9, in the second embodiment of spray head 800, exist with the difference in above-mentioned first embodiment
In each second conduit 821 is not inserted directly into the second air inlet 840 on coldplate 854, but is slightly displaced from.For example,
It is step-like, the second conduit that the buffering area 855 in a buffering area 855, this example is provided near the head end of second air inlet 840
821 convey hydride gas to buffering area 855, to reduce shock effect (impinging effect).While the first air inlet
Carrier gas all the way is also communicated to the buffering area 855 of this example by 830 third gas passages, the hydrogen for conveying carrier gas and the second conduit 821
Compound gas is mixed at buffering area 855 or in the second air inlet 840 latter to be exported with by the second air inlet 840.
As shown in Figure 10, in the 3rd embodiment of spray head 800, it is with the difference in above-mentioned first embodiment,
There is provided another second conduit 822.The second conduit 822 described in this example top connection second gas passage, and this second
The bottom of conduit 822 is closing, after the bottom of the second conduit 822 is inserted into the second air inlet 840, by being opened in
Some perforates on the side wall of second conduit 822 convey hydride gas, to reduce shock effect.
In above-mentioned first coldplate 854 used into 3rd embodiment, the second air inlet 840 is the constant taper of angle
Funnel structure.The angle refers to the side wall of conical hopper structure and the angle of vertical direction.
As shown in Figure 17, Figure 18, in the coldplate 854 of another example, the second air inlet 840 is biconial funnel structure
860, i.e. epimere 861 and hypomere 862 are respectively the constant conical hopper structure of angle, and the angle of hypomere 862 is more than epimere
861 angle, and the bore of the end of hypomere 862 is more than the bore of the end of epimere 861；Hypomere 862 refers to second air inlet 840
Closer to the part of the bottom surface of coldplate 854, the end bore of hypomere 862 is exactly the end bore of second air inlet 840；Epimere
861 be closer to the top surface of coldplate 854 part, inside coldplate 854.The example opens up second in coldplate 854
While ensureing mechanical strength after air inlet 840, additionally it is possible to which effectively expansion coldplate 854 bottom surface opens up the face for air inlet
Product, with reduce parasitic particle can adsorbable region area.
As shown in Figure 11, Figure 12, in the coldplate 854 of also one example, in order to expand the bottom surface of coldplate 854 open up for
The area of air inlet, polyhedron funnel structure 823 is designed as by the second air inlet 840, i.e. the similar petal of the second air inlet 840
Shape, its side wall be provided with a plurality of rib, terminal edge be polygon (and shown in above-mentioned two example in the second air inlet 840 in
Wall smoothly transits, and terminal edge is circle).The second air inlet 840 is further illustrated in Figure 13 for polyhedron funnel structure 823
Coldplate 854, a kind of example combined with the second conduit 822 of bottom end closure, side-wall hole gas transmission.
As shown in Figure 14, Figure 15, Figure 16, in a specific application, (such as the second air inlet 840 is conical hopper knot
Structure) in, the coldplate 854 of spray head 800 is thickness 20mm, diameter 460mm circle.In A-A ' directions, any two second is entered
The center of circle of gas port 840 to the spacing between the center of circle be 28.3mm, the center of circle to the center of circle of the second air inlet of any two 840 in B-B ' directions
Between space D be 20mm.Every four the second air inlets 840 surround first air inlet 830 wherein, this first is entered
Gas port 830 is located at nearest between the diagonal crosspoint of these the second air inlets 840, the edge of adjacent second air inlet 840
Distance is G-1, the minimum distance at edge to the edge of any one the second air inlet 840 of the first air inlet 830 is G-2。
As shown in figure 19, the home position of this four the second air inlets 840 is set to as the square region that corner is surrounded
One cellular zone, then the length of side of the cellular zone is space D, area S1=D2.If the end bore of the second air inlet 840 is Od-1, the
The head end bore of two air inlets 840 is Od-5.If the end bore of the first air inlet 830 is Od-2, it is interspersed in therein first and leads
The external diameter of pipe 811 is Od-3, the internal diameter of the first conduit 811 is that the end bore of the first air induction conduit 810 is Od-4.If an operation area
Area beListed in the ratio S2/S1 of the area of operation area and cellular zone, table 1, table 2
Some examples of above-mentioned some parameters.
The unit mm of table 1
| Sequence number | D | S1 | Od-1 | Od-2 | Od-3 | Od-4 | S2 | G-1 | G-2 | S2/S1 |
| 1 | 20.0 | 400.0 | 16.0 | 4.0 | 1.477 | 1.069 | 213.6 | 4.0 | 4.1 | 53.4% |
| 2 | 20.0 | 400.0 | 15.0 | 4.0 | 1.477 | 1.069 | 189.3 | 5.0 | 4.6 | 47.3% |
| 3 | 20.0 | 400.0 | 14.0 | 4.0 | 1.477 | 1.069 | 166.5 | 6.0 | 5.1 | 41.6% |
| 4 | 20.0 | 400.0 | 14.0 | 3.0 | 1.477 | 1.069 | 160.8 | 6.0 | 5.6 | 40.2% |
| 5 | 20.0 | 400.0 | 13.5 | 3.0 | 1.477 | 1.069 | 150.0 | 6.5 | 5.9 | 37.5% |
| 6 | 20.0 | 400.0 | 13.0 | 3.5 | 1.477 | 1.069 | 142.4 | 7.0 | 5.9 | 35.6% |
| 7 | 20.0 | 400.0 | 13.0 | 3.0 | 1.477 | 1.069 | 139.8 | 7.0 | 6.1 | 35.0% |
| 8 | 20.0 | 400.0 | 12.0 | 5.0 | 1.477 | 1.069 | 132.7 | 8.0 | 5.6 | 33.2% |
| 9 | 20.0 | 400.0 | 12.0 | 3.0 | 1.477 | 1.069 | 120.2 | 8.0 | 6.6 | 30.0% |
The unit mm of table 2
| D | S1 | Od-1 | Od-2 | Od-5 | S2 | G-1 | G-2 | S2/S1 |
| 20.0 | 400.0 | 17.00 | 4.00 | 2.00 | 239.5 | 3.00 | 3.60 | 59.9% |
As shown in Figure 17, Figure 18, Figure 20, in another concrete application, (such as the second air inlet 840 is biconial infundibular ganglion
Structure 860) in, the thickness of coldplate 854 is T；Wherein, with the top surface of coldplate 854 apart from T-3Region be straight-tube shape, bore
(i.e. the head end bore of the second air inlet 840) is Od-5；Thickness T afterwards-2Region be epimere, the side wall of epimere 861 and vertical side
To angle be θ, the end bore of epimere 861 is Od-x；With the bottom surface of coldplate 854 apart from T-1Region be hypomere 862, under
The side wall of section 862 and the angle of vertical direction are 2 θ, and the end bore of hypomere 862 is Od-1.Each parameter has following relation：
Cooling medium pipeline 850 is laterally opened in the coldplate 854 between the second air inlet 840 and the first air inlet 830
In, the distance in the center of circle of each cooling medium pipeline 850 to the central shaft of adjacent the second air inlet 840 or the first air inlet 830
For 7.07mm；The center of circle of each cooling medium pipeline 850 is T with the distance of the top surface of coldplate 854-4.Listed in table 3, table 4 above-mentioned
Some examples of some parameters.
The unit of table 3：mm
| θ(deg) | Od-1 | Od-2 | Od-5 | Od-3 | Od-6 | T-1 | T-2 | T-3 | T-4 | T |
| 10 | 17.00 | 4.00 | 2.00 | 8.30 | 5.00 | 12.00 | 17.76 | 2.24 | 7.00 | 32.00 |
The unit of table 4：mm
| θ | tanθ | Tan2θ | Od-1 | Od-5 | Od-x | T-1 | T-2 | T-3 | T |
| 10 | 0.176 | 0.364 | 17.0 | 2.0 | 8.3 | 12.00 | 17.76 | 2.00 | 31.76 |
| 10 | 0.176 | 0.364 | 16.0 | 2.0 | 8.0 | 11.00 | 16.99 | 2.00 | 29.99 |
| 10 | 0.176 | 0.364 | 16.0 | 4.0 | 7.3 | 12.00 | 9.26 | 2.00 | 23.26 |
| 10 | 0.176 | 0.364 | 16.0 | 4.0 | 5.8 | 14.00 | 5.13 | 2.00 | 21.13 |
| 10 | 0.176 | 0.364 | 15.5 | 4.0 | 8.2 | 10.00 | 11.97 | 2.00 | 23.97 |
| 10 | 0.176 | 0.364 | 15.0 | 4.0 | 7.7 | 10.00 | 10.55 | 2.00 | 22.55 |
| 10 | 0.176 | 0.364 | 14.0 | 4.0 | 7.4 | 9.00 | 9.78 | 2.00 | 20.78 |
| 10 | 0.176 | 0.364 | 13.5 | 4.0 | 6.9 | 9.00 | 8.36 | 2.00 | 19.36 |
| 10 | 0.176 | 0.364 | 13.0 | 4.0 | 6.8 | 8.50 | 7.98 | 2.00 | 18.48 |
| 10 | 0.176 | 0.364 | 13.0 | 4.0 | 7.2 | 8.00 | 9.01 | 2.00 | 19.01 |
| 10 | 0.176 | 0.364 | 12.0 | 4.0 | 6.5 | 7.50 | 7.20 | 2.00 | 16.70 |
As shown in figure 4, the spray head 800 that above-mentioned each example is provided, the top in MOCVD device reaction chamber 900；It is described
Bottom in reaction chamber 900 is provided with the pedestal 910 for carrying substrates 920, and it can rotate around central shaft；The pedestal 910
Lower section is additionally provided with the heater 930 of substrate 920；The substrate temperature on pedestal 910 can be made to reach suitable life by heater
The temperature of long crystal, typically such as larger than 600 DEG C, even greater than 1000 DEG C.MOCVD device is additionally provided with air extractor, will be anti-
Tail gas discharge reaction chamber after answering is handled or recycled.
The substrate is conventional to be had：Gallium phosphide (GaP), indium phosphide (InP), silicon (Si), carborundum (SiC) and sapphire
(Sapphire, Al2O3) etc..The predominantly Group III-V compound semiconductor film generally grown, wherein entering by first
Gas port conveying is used for providing the organic metal gas in III race's element source, and conventional has：Trimethyl gallium (TMGa), trimethyl aluminium
(TMAl), trimethyl indium (TMIn) etc..Conveyed by the second air inlet and be used for providing the hydride gas that V group element is originated,
Conventional has ammonia (NH3), arsenic hydride (AsH3), hydrogen phosphide (PH3) and silicon ethane (Si2H6) etc..May also it inputted
Silane (the SiH as n-shaped doped source is mixed with gas4), or it is used as two luxuriant magnesium (CP of p-type doped source2Mg), etc..Pass through
First, the carrier gas of the second air inlet conveying, conventional has：Hydrogen (H2), nitrogen (N2), etc..
Or, in another application structure, the mixed of organic metal gas and carrier gas is conveyed by the first air induction conduit
Gas is closed, the mixed gas of organic metal gas and hydride gas is conveyed by the second air induction conduit.Pass through the first air inlet
Mouthful convey and simultaneously to form heavy curtain shape air-flow, to the separation gas for separating preceding two-way gas, can not only use carrier gas, can be with
Using Ar or He etc. purge gas (purge gas), either purge gas and the mixed gas of carrier gas or other can have
Effect separates the auxiliary gas that organic metal gas do not interfere with PROCESS FOR TREATMENT in reaction chamber with hydride gas again simultaneously.
As shown in figure 21, by taking trimethyl gallium TMGa as an example, the chemical reaction process of analytical reactions intracavitary.Leaned in reaction chamber
At nearly air inlet (at 100 DEG C or so), by with NH3Reaction TMGa, which exhausts rapidly, becomes adduct；As gas sprays downwards,
Adduct heat (at about 500 DEG C or so) is decomposed again raises TMGa concentration；And then at the substrate closer to high temperature
(during temperature about more than 900K), TMGa then almost all pyrolysis be monomethyl gallium MMGa, by MMGa grown as GaN film in Ga
The main source of atom.Positioned at the gas formation boundary layer of substrate surface, the thickness δ in the boundary layer has a preferred value δ0, example
Such as δ0=10mm, δ0Typically with species diffusion, thermograde, the gas flow rate of metal organic gas etc..Generally it is desirable to boundary layer
Thickness δ can be less than preferred value δ0, to guarantee with high film growth rate；Otherwise film growth rate can be reduced and given birth to
Into parasitic particle will increase.
Need the reacting gas of consumption more in the MOCVD device of existing turbine type (turbo disk type), gas stream
It is fast high, and must make the pedestals of carrying substrates at a high speed rotation (>1000rpm), reduce the thickness δ in boundary layer, and make gas
It can be uniformly distributed on substrate.The spray head that the present invention is described in the MOCVD device of turbine type using the various embodiments described above
Afterwards, it is not necessary to make pedestal rotation at a high speed, also can guarantee that with high film growth rate and gas uniform distribution.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of air inlet and cooling device for MOCVD device, it is characterised in that provided with the spray positioned at reaction chamber inner top
Head, wherein including：
Multiple reacting gas diffusion chambers being mutually isolated, multiple reacting gas diffusion chambers include polylith dividing plate, wherein bottom
Multigroup gas conduit is provided with dividing plate, reacting gas is passed through to reaction chamber by conduit, multigroup gas conduit includes：
One group of first air induction conduit, for conveying organic metal gas in the reaction chamber to MOCVD device；
One group of second air induction conduit, for conveying hydride gas；The organic metal gas and hydride gas are by the spray
The carrier gas of head conveying carries to the substrate surface of reaction chamber inner bottom part and carries out thin film deposition reaction；
Also include one piece of coldplate below multiple reacting gas diffusion chambers, the reacting gas diffusion chamber includes being located at bottom
Include on separation gas diffusion chamber between dividing plate and coldplate, the coldplate：
One group of first air inlet, for conveying separation gas into the reaction chamber；Each first air induction conduit is worn respectively
It is located among corresponding first air inlet, the heavy curtain shape gas that the separation gas for conveying the first air inlet is formed
Stream is looped around organic metal gas periphery, and the organic metal gas just sprayed and hydride gas are separated；And,
One group of second air inlet, respectively lower end bore are more than the funnel-form of upper end bore；
The lower ending opening of first air inlet and the second air inlet, it is spaced and be alternately distributed in the bottom surface of coldplate；Often
Individual second air inlet is connected with corresponding second air induction conduit, by second air inlet by hydride
Gas and the mixed gas of carrier gas are conveyed into the reaction chamber.
2. air inlet as claimed in claim 1 and cooling device, it is characterised in that
First air induction conduit individually conveys organic metal gas, or conveying organic metal gas and the gaseous mixture of carrier gas
Body；
Second air induction conduit individually conveys hydride gas, or conveying hydride gas and the mixed gas of carrier gas；
The separation gas of the first air inlet conveying, is carrier gas or purge gas or its mixed gas.
3. air inlet as claimed in claim 1 and cooling device, it is characterised in that
Inside the spray head, the polylith dividing plate of multiple reacting gas diffusion chambers being mutually isolated includes the first dividing plate,
Two dividing plates, the 3rd dividing plate；
The separation gas diffusion chamber formed between the coldplate and the 3rd dividing plate, is communicated to described opened up on the cooling plate
One air inlet and the second air inlet；
The the second reacting gas diffusion chamber formed between 3rd dividing plate and second partition is communicated to the second air induction conduit, described
Second air induction conduit is inserted into corresponding second air inlet, the upper end of the second air inlet is centered around under the second air induction conduit
The periphery at end；
The the first reacting gas diffusion chamber formed between the second partition and the first dividing plate is communicated to the first air induction conduit, described
First air induction conduit is interspersed in corresponding first air inlet.
4. air inlet as claimed in claim 3 and cooling device, it is characterised in that
In the coldplate of the spray head, avoid each air inlet and the position of each gas passage in communication, provided with cooling but
The pipeline of flow of media.
5. air inlet as claimed in claim 3 and cooling device, it is characterised in that
The side wall of second air inlet is provided with buffering area, and second air induction conduit connects the second reacting gas diffusion
Reacting gas is passed through the buffering area by chamber, and reacting gas flows into the second air inlet after buffering area.
6. air inlet as claimed in claim 3 and cooling device, it is characterised in that
The bottom of the closing of second air induction conduit is inserted into the second air inlet, is opened up on the second air induction conduit side wall
There are some perforates to be used for conveying reacting gas.
7. air inlet as claimed in claim 1 and cooling device, it is characterised in that
The lower end position of first air inlet is less than the lower end position for being located in the first air induction conduit therein.
8. air inlet and cooling device as described in claim 1 or 3, it is characterised in that
Second air inlet is side wall and the constant conical hopper structure of vertical direction angle.
9. air inlet and cooling device as described in claim 1 or 3, it is characterised in that
Second air inlet is biconial funnel structure, comprising the epimere that side wall and vertical direction angle are first angle, and
Side wall is less than second angle with the hypomere that vertical direction angle is second angle, first angle.
10. air inlet and cooling device as described in claim 1 or 3, it is characterised in that
Second air inlet is polyhedron funnel structure, and the terminal edge of second air inlet is polygon, and side wall is provided with
A plurality of rib.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410272606.0A CN105200395B (en) | 2014-06-18 | 2014-06-18 | Air inlet and cooling device for MOCVD device |
| TW103123869A TW201600634A (en) | 2014-06-18 | 2014-07-10 | Intake and cooling device for MOCVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410272606.0A CN105200395B (en) | 2014-06-18 | 2014-06-18 | Air inlet and cooling device for MOCVD device |
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| CN105200395A CN105200395A (en) | 2015-12-30 |
| CN105200395B true CN105200395B (en) | 2017-11-03 |
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| JP6718730B2 (en) * | 2016-04-19 | 2020-07-08 | 株式会社ニューフレアテクノロジー | Shower plate, vapor phase growth apparatus and vapor phase growth method |
| CN106811736B (en) * | 2016-12-27 | 2019-03-05 | 南昌大学 | A kind of chemical vapor deposition unit |
| CN108728821B (en) * | 2017-04-21 | 2020-05-01 | 中微半导体设备(上海)股份有限公司 | MOCVD processing apparatus and gas supply apparatus for MOCVD |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| CN115572958B (en) * | 2022-09-30 | 2023-08-11 | 楚赟精工科技(上海)有限公司 | Gas conveying assembly and gas phase reaction device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001023910A (en) * | 2000-01-01 | 2001-01-26 | Fujitsu Ltd | Semiconductor manufacturing apparatus |
| JP2010059520A (en) * | 2008-09-05 | 2010-03-18 | Sharp Corp | Vapor deposition apparatus and vapor deposition method |
| JP2011012331A (en) * | 2009-07-06 | 2011-01-20 | Sharp Corp | Vapor deposition apparatus and vapor deposition method |
| CN102260861A (en) * | 2010-05-26 | 2011-11-30 | 塔工程有限公司 | Chemical vapor deposition device and method thereof |
| CN102473610A (en) * | 2009-07-08 | 2012-05-23 | 株式会社Eugene科技 | Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060037822A (en) * | 2004-10-28 | 2006-05-03 | 주식회사 하이닉스반도체 | Apparatus for high density plasma chemical vapor deposition and method for fabricating semiconductor device using the same |
| US9492805B2 (en) * | 2005-11-01 | 2016-11-15 | Massachusetts Institute Of Technology | Initiated chemical vapor deposition of vinyl polymers for the encapsulation of particles |
| EP2356672B1 (en) * | 2008-12-04 | 2018-09-12 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements |
| US8470400B2 (en) * | 2009-10-21 | 2013-06-25 | Board Of Regents, The University Of Texas System | Graphene synthesis by chemical vapor deposition |
| US20120000490A1 (en) * | 2010-07-01 | 2012-01-05 | Applied Materials, Inc. | Methods for enhanced processing chamber cleaning |
| CN102560429B (en) * | 2012-03-13 | 2014-12-03 | 中微半导体设备(上海)有限公司 | Metal organic vapor phase deposition device |
| CN103361624B (en) * | 2012-03-30 | 2015-07-01 | 理想能源设备(上海)有限公司 | Metallo-organic compound chemical vapor deposition method and device |
-
2014
- 2014-06-18 CN CN201410272606.0A patent/CN105200395B/en active Active
- 2014-07-10 TW TW103123869A patent/TW201600634A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001023910A (en) * | 2000-01-01 | 2001-01-26 | Fujitsu Ltd | Semiconductor manufacturing apparatus |
| JP2010059520A (en) * | 2008-09-05 | 2010-03-18 | Sharp Corp | Vapor deposition apparatus and vapor deposition method |
| JP2011012331A (en) * | 2009-07-06 | 2011-01-20 | Sharp Corp | Vapor deposition apparatus and vapor deposition method |
| CN102473610A (en) * | 2009-07-08 | 2012-05-23 | 株式会社Eugene科技 | Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates |
| CN102260861A (en) * | 2010-05-26 | 2011-11-30 | 塔工程有限公司 | Chemical vapor deposition device and method thereof |
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| CN105200395A (en) | 2015-12-30 |
| TW201600634A (en) | 2016-01-01 |
| TWI513855B (en) | 2015-12-21 |
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Application publication date: 20151230 Assignee: Nanchang Medium and Micro Semiconductor Equipment Co., Ltd. Assignor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Contract record no.: 2018990000345 Denomination of invention: Gas inflowing and cooling device for MOCVD equipment Granted publication date: 20171103 License type: Exclusive License Record date: 20181217 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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