CN101294277B - Thin film deposition method - Google Patents
Thin film deposition method Download PDFInfo
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- CN101294277B CN101294277B CN200810089984XA CN200810089984A CN101294277B CN 101294277 B CN101294277 B CN 101294277B CN 200810089984X A CN200810089984X A CN 200810089984XA CN 200810089984 A CN200810089984 A CN 200810089984A CN 101294277 B CN101294277 B CN 101294277B
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Abstract
The invention relates to a thin film deposition method. After reacting gas is accessed and the reacting gas in a reaction chamber reaches the pre-determined pressure, the reaction chamber is fully sealed before ionizing the reacting gas or during the process of ionizing the reacting gas. The distribution of all the reacting gas inside the reaction chamber after being sealed is more uniform, thereby facilitating the enhancement of the uniformity of the doped substances in the film layer as well as the improvement of the film layer in performance.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, particularly a kind of method of thin film deposition.
Background technology
Along with the worsening shortages of the energy, people pay attention to day by day to the development and utilization of sun power.Market is to more big area, the demand lighter and thinner and novel solar battery that production cost is lower increase day by day.In these novel solar batteries, the exploitation of thin-film solar cells, particularly large area film solar cell has been subjected to worldwide extensive concern.Thin-film solar cells is few with the silicon amount, easier reducing cost, and under the situation of silicon material constant tension, thin film solar cell has become the new trend and the new focus of solar cell development.
Thin-film solar cells is a multilayer device, as shown in Figure 1, typical thin-film solar cells has the p-i-n rhythmo structure of being made up of p layer 10, i layer 11 and n layer 12 usually, and wherein p layer 10, i layer 11 and n layer 12 are respectively p type doping film silicon layer, i type (membrane silicon layer of non-doping or intrinsic) and n type doping film silicon layer.P layer 10 and n layer 12 are set up an internal electric field between i layer 11, the i layer 11 that is made of intrinsic silicon hydride directly converts incident optical energy to electric energy.Three layers of combination of this p-i-n are called a photovoltaic element, or one " knot ".The unijunction photoelectric device contains single photovoltaic element, contains the photovoltaic element that two or more are superimposed and closely link to each other and tie photoelectric device (multijunction solar cell also claims lamination solar cell) more.The p-i-n structural sheet of based thin film silicon is clipped between conductive film electrode and the transparent material substrate (for example glass), has just formed a complete solar cell.Each layer of large area film solar cell p-i-n structure is in the large area film deposition apparatus, utilizes plasma enhanced chemical vapor deposition (PECVD) process deposits to form.In application number is 200820008274.5 Chinese patent application, above-mentioned film deposition apparatus has been described, Fig. 2 utilizes this device to carry out the simplified construction synoptic diagram of thin film deposition for explanation, as shown in Figure 2, in the thin film deposition zone 120 of reaction chamber 110, alternately arrange big area exciting electrode plate and grounding electrode plate at interval, its both side surface is all placed solar energy in large area cell substrates 121, and reaction chamber 110 has inlet mouth 102 and air outlet 106.Reactant gases enters deposition region 120 by inlet mouth 102, and 108 pairs of exciting electrode plates of excitation power supply provide radio-frequency (RF) energy, thus with reactant gases ionization be plasma body at the substrate surface deposit film, remaining gas is discharged by air outlet 106.In this membrane deposition method, reactant gases enters reaction chamber by inlet mouth 102 and is ionized the back by air outlet 106 discharges, and reactant gases dynamically flows along the arrow direction.Because what adopt is the broad-area electrode plate, substrate also is that the big area plate is such as sheet glass, reaction chamber 110 overall volume are bigger, reactant gases flows in deposition region 120 from top to bottom, the reactant gases that enters into 120 tops, deposition region is ionized earlier, be not ionized with ionization after remaining gas be ionized again after flowing to the bottom, therefore the reacting gas concentration of bottom reduces relatively, that is to say, the up and down distribution of reactant gases in deposition region 120 is also inhomogeneous, the reacting gas concentration on 120 tops, deposition region is greater than the reacting gas concentration of 120 bottoms, deposition region, this certainly will cause substrate on, depositing thin film is inhomogeneous, thereby influences Solar cell performance.
Summary of the invention
The object of the present invention is to provide a kind of membrane deposition method, can improve the large-area substrates uniformity of thin film deposition, improve film performance.
For achieving the above object, a kind of membrane deposition method provided by the invention comprises:
At the electrode surface installation base plate;
In reaction chamber, feed reactant gases;
Reaction chamber is sealed;
At the substrate surface deposit film;
Deposition finishes, and discharges residual gas.
Preferably, described method also comprises the step of monitoring reaction indoor gas pressure.
Preferably, described electrode comprises exciting electrode plate and grounding electrode plate.
Preferably, equidistant in reaction chamber, the alternately arrangement of longitudinal interval of described exciting electrode plate and grounding electrode plate.
Another kind of membrane deposition method provided by the invention comprises:
At the electrode surface installation base plate;
In reaction chamber, feed reactant gases;
At the substrate surface deposit film;
In ionization reaction gas or in the ionization reaction gas process reaction chamber all being sealed and keep preset time deposition reaction to the reaction chamber finishes;
Deposition finishes, and discharges residual gas.
Preferably, the time of described setting is 5～100 seconds.
Preferably, the time of described setting is 10～50 seconds.
Preferably, described method also comprises the step that feeds reactant gases in reaction chamber after carrying out the step of reaction chamber being sealed and keeps specified time.
Preferably, described reactant gases is silane (SiH
4), hydrogen (H
2), borine (B
2H
6) and methane (CH
4) mixed gas.
Preferably, described reactant gases is silane (SiH
4), borine (B
2H
6) and methane (CH
4) mixed gas.
Preferably, described electrode comprises exciting electrode plate and grounding electrode plate.
Preferably, equidistant in reaction chamber, the alternately arrangement of longitudinal interval of described exciting electrode plate and grounding electrode plate.
Compared with prior art, the present invention has the following advantages:
Membrane deposition method of the present invention before ionization reaction gas or in the process of ionization reaction gas, all seals reaction chamber after feeding reactant gases and making reactant gases in the reaction chamber reach predetermined pressure.All after the sealing, inner reaction gas is known from experience uniform distribution to reaction chamber, makes subsequently reactant gases ionization is more even by the sedimentary rete of plasma body, helps to improve the homogeneity of dopant in the rete, improves the performance of rete; Closed reaction chamber in the process of ionization reaction gas, can improve impurity concentration and rete characteristic in the rete of subsequent deposition, improve the band gap properties of the contact interface of this rete and next rete, thereby further improved the photoelectric transformation efficiency of thin-film solar cells.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.In the accompanying drawings, for clarity sake, amplified the thickness of layer.
Fig. 1 is the p-i-n structural representation of typical thin-film solar cells;
The synoptic diagram that Fig. 2 utilizes film deposition apparatus to carry out thin film deposition for explanation;
Fig. 3 is the reaction chamber closed state synoptic diagram of explanation membrane deposition method of the present invention;
Fig. 4 is the membrane deposition method schema according to first embodiment of the invention;
Fig. 5 is the membrane deposition method schema according to second embodiment of the invention;
Fig. 6 is the membrane deposition method schema according to third embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Fig. 3 is the reaction chamber closed state synoptic diagram of explanation membrane deposition method of the present invention.Described synoptic diagram is an example, and it should not limit the scope of protection of the invention at this.Reaction chamber 110 shown in Figure 3 is a kind of reaction chambers that large-area substrates carried out deposit film, in reaction chamber, alternately vertically arrange exciting electrode plate and grounding electrode plate at interval, exciting electrode plate and grounding electrode plate are the tabular electrode of big area, and its both side surface all can be placed large-area substrates 121.Because adopt the broad-area electrode plate, the reaction chamber internal space is relatively large, reactant gases mobile make the reaction chamber internal space about in the of 120 gas concentration have ununiformity.Membrane deposition method of the present invention, after the battery lead plate both sides install substrate, feed reactant gases, and make the reactant gases in the reaction chamber reach predetermined pressure, 0.5-10Torr for example, then, before 108 pairs of exciting electrode plates of power supply provide radio-frequency (RF) energy ionization reaction gas or in the process of ionization reaction gas, utilize valve body 104 that the inlet mouth 102 and the air outlet 106 of reaction chamber 110 are all sealed, make reaction chamber 110 inside be air-tight state.
Fig. 4 is the membrane deposition method schema according to first embodiment of the invention.Described synoptic diagram is an example, and it should not limit the scope of protection of the invention at this.The flow process of first embodiment of membrane deposition method of the present invention as shown in Figure 4, at first at electrode surface installation base plate (S401); Reaction chamber is vacuumized to discharge the reaction chamber gas inside, in reaction chamber, feed reactant gases (S402) then; With deposition p layer is example, and reactant gases comprises silane (SiH
4), hydrogen (H
2), borine (B
2H
6) and methane (CH
4) mixed gas.The photoelectric transformation efficiency of non-crystal silicon solar cell depends primarily on the performance of hydrogenant non-crystal silicon carbon alloy p layer, comprises its band gap numerical value and doping content.When the pressure of reaction chamber reaction gases reaches preset value (0.5～10Torr) time, reaction chamber is all sealed (S403), the mode of closed reaction chamber both can be closed inlet mouth and air outlet simultaneously, also can close the air outlet earlier and close inlet mouth again, or close inlet mouth earlier and close the air outlet again.The reacting gas concentration of its internal space, reaction chamber sealing back can be more even; Power to exciting electrode then, described reactant gases is excited be plasma body, at substrate surface deposit film (S404); Deposition is stopped power supply after finishing, and discharges residue reactant gases (S405).After the reaction chamber sealing, the gas inside concentration ratio is more even, is improved at the thickness of the sedimentary whole rete of substrate surface and the homogeneity of impurity concentration.And, make reaction chamber enter closed state completely, at this moment, because silane and hydrogen in the continuous consumption reaction gas of plasma-deposited process, hydrogen to methane ionization after in the gas reductive action of carbon ion weaken, thereby make the concentration of carbon ion constantly increase in the gas after the methane ionization in the conversion zone along with the time, the composition of the carbon in the depositional coating gas is more and more higher, make carbon content raising in the sedimentary p layer of institute, help improving the band gap of p layer, improve the photoelectric transformation efficiency of non-crystal silicon solar cell.
Fig. 5 is the membrane deposition method schema according to second embodiment of the invention; Described synoptic diagram is an example, and it should not limit the scope of protection of the invention at this.The flow process of second embodiment of membrane deposition method of the present invention as shown in Figure 5, at first at electrode surface installation base plate (S501); Reaction chamber is vacuumized to discharge the air of reaction chamber inside, in reaction chamber, feeds reactant gases and discharge reactant gases (reactant gases still with the aforementioned p of deposition layer be example) (S502) by inlet mouth subsequently by the air outlet; Make air pressure in the reaction chamber maintain preset value (0.5～10Torr), provide energy to exciting electrode then, reactant gases is excited be plasma body, at substrate surface deposit film (S503); Need to prove that the step S504 with the reaction chamber sealing in the present embodiment both can carry out simultaneously with S503, can carry out the execution midway of step S503 again, finished up to deposition; Also can carry out when soon finishing the S503 step, and keep for some time, for example 5～100 seconds (S505) finishes up to deposition.The mode of closed reaction chamber both can be closed inlet mouth and air outlet simultaneously, also can close the air outlet earlier and close inlet mouth again, or close inlet mouth earlier and close the air outlet again.Deposition is stopped power supply after finishing, and gets rid of residue reactant gases (S506).Present embodiment can be adjusted the band gap of p layer flexibly, particularly 10 seconds left and right sides closed reaction chamber can obtain wideer band gap at the interface that the p layer be close in the i layer before finishing p layer deposition, thereby strengthen the internal electric field of battery, wideer p layer band gap can improve and come from the p/i interface zone to photoelectronic repulsive force, thereby the current carrier of reduction p/i interface zone is compound, increases the open circuit voltage of solar cell.
Fig. 6 is the membrane deposition method schema according to third embodiment of the invention.Described synoptic diagram is an example, and it should not limit the scope of protection of the invention at this.As shown in Figure 6, the 3rd embodiment of membrane deposition method of the present invention is at first at electrode surface installation base plate (S601); Reaction chamber is vacuumized to discharge the air of reaction chamber inside, in reaction chamber, feeds reactant gases by inlet mouth subsequently, and by the air outlet discharge reactant gases (reactant gases still with aforementioned deposition p layer be example, do not repeat them here) (S602); Make the air pressure in the reaction chamber maintain preset value (0.5～10Torr).Provide energy to exciting electrode then, reactant gases is excited be plasma body, at substrate surface deposit film (S603); Need to prove, the step S604 with the reaction chamber sealing in the present embodiment both can begin simultaneously to carry out with step S603, can after performing step S603, carry out again, and keep 10～50 seconds (S605) for example, one period scheduled time, and then inlet mouth and air outlet opened (S606), postreaction gas.The reactant gases that replenishes is preferably silane (SiH
4), borine (B
2H
6) and methane (CH
4) mixed gas.Reach after the preset air pressure closed reaction chamber again.Repeat repeatedly performing step S602 like this to step S605, promptly carry out the step of at least closed reaction chamber in deposition process, the impurity concentration gradient that this mode can the flexible depositional coating and the band gap at rete different thickness place distribute.Deposition is stopped power supply after finishing, and gets rid of residue reactant gases (S607).
The above only is preferred embodiment of the present invention, is not the present invention is done any form restriction.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the protection domain of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (8)
1. membrane deposition method comprises:
At the electrode surface installation base plate;
In reaction chamber, feed reactant gases;
Reaction chamber is all sealed;
At the substrate surface deposit film;
Deposition finishes, and discharges residual gas.
2. membrane deposition method according to claim 1 is characterized in that: described method also comprises the step of monitoring reaction indoor gas pressure.
3. membrane deposition method according to claim 1 is characterized in that: described electrode comprises exciting electrode plate and grounding electrode plate.
4. membrane deposition method according to claim 3 is characterized in that: described exciting electrode plate and grounding electrode plate are equidistant in reaction chamber, longitudinal interval is alternately arranged.
5. membrane deposition method comprises:
At the electrode surface installation base plate;
In reaction chamber, feed reactant gases;
At the substrate surface deposit film;
In ionization reaction gas or in the ionization reaction gas process reaction chamber all being sealed and keep preset time deposition reaction to the reaction chamber finishes;
Deposition finishes, and discharges residual gas.
6. membrane deposition method according to claim 5 is characterized in that: described preset time is 5～100 seconds.
7. membrane deposition method according to claim 5 is characterized in that: described preset time is 10～50 seconds.
8. membrane deposition method according to claim 7 is characterized in that: described method also comprises the step that feeds reactant gases in reaction chamber after carrying out the step of reaction chamber being sealed and keeps specified time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810089984XA CN101294277B (en) | 2008-04-15 | 2008-04-15 | Thin film deposition method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810089984XA CN101294277B (en) | 2008-04-15 | 2008-04-15 | Thin film deposition method |
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| Publication Number | Publication Date |
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| CN101294277A CN101294277A (en) | 2008-10-29 |
| CN101294277B true CN101294277B (en) | 2010-12-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101775591A (en) * | 2010-03-23 | 2010-07-14 | 福建钧石能源有限公司 | Method for depositing film |
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Owner name: BEIJING JINGCHENG APOLLO OPTOELECTRONIC EQUIPMENT Effective date: 20110825 |
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Effective date of registration: 20110825 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Co-patentee after: Beijing Jingcheng Boyang Optoelectronic Equipment Co.,Ltd. Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
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