CN102080220A - Low-pressure chemical vapor deposition reaction equipment - Google Patents
Low-pressure chemical vapor deposition reaction equipment Download PDFInfo
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- CN102080220A CN102080220A CN 201110047008 CN201110047008A CN102080220A CN 102080220 A CN102080220 A CN 102080220A CN 201110047008 CN201110047008 CN 201110047008 CN 201110047008 A CN201110047008 A CN 201110047008A CN 102080220 A CN102080220 A CN 102080220A
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Abstract
The invention discloses low-pressure chemical vapor deposition reaction equipment, which comprises a box body, a workpiece frame positioned inside the box body, a first reaction gas pipeline and a second reaction gas pipeline, wherein the workpiece frame is provided with a plurality of brackets which are longitudinally and alternately arranged at intervals; both sides of the brackets are provided with baseplates; and both the first reaction gas pipeline and the second reaction gas pipeline are provided with a plurality of gas outlets for introducing reaction gas into reaction spaces among the baseplates. The low-pressure chemical vapor deposition reaction equipment can further improve the production efficiency and reduce the production cost and maintenance cost.
Description
Technical field
The present invention relates to the photovoltaic solar cell technical field, particularly a kind of low-pressure chemical vapor deposition (LPCVD) conversion unit.
Background technology
Along with the worsening shortages of the energy, the development and use of renewable green energy resource more and more are subjected to people's attention, are subjected to common people's favor especially especially with the utilization of sun power.Sun power is as cleaning, safe, the sustainable and reliable energy, and photovoltaic (PV) system is enlarging its application aspect the energy and industrial technology exploitation rapidly.In recent years, caused common concern as photovoltaic (photovoltaic) battery of solar energy converting media and the development and application of big area photovoltaic module device.With silicon single crystal, polysilicon, amorphous silicon membrane etc. is that the widespread use of solar panel in facilities such as commerce and residential building of representative demonstrates great potential.Thin-film solar cell panel particularly is widely used in the solar electrical energy generation in fields such as civilian installation building just day by day with its big area, frivolous characteristics such as transparent.
Thin-film solar cells is a multilayer device, and different layers has different characteristics and effect in entire structure.A typical thin-film solar cells generally includes glass substrate, the preceding electrode of TCO (transparent conductive oxide), has the p-i-n structure of being made up of p, i and n N-type semiconductorN silicon film, back electrode and back of the body sheet glass.Doped layer p layer and n layer are set up an internal electric field between the i layer.I layer based on silicon directly converts incident optical energy to electric energy, is collected by preceding electrode and back electrode.
Electrode and back electrode adopt zinc oxide (ZnO) material usually before the electrically conducting transparent, utilize LPCVD at the glass surface formation of deposits.LPCVD makes gaseous compound form the stabilization of solid film in substrate surface reaction and deposit under the low pressure condition with the mode that heats.Because operating pressure is low, the mean free path and the spread coefficient of gas molecule are big, so can adopt intensive load mode to boost productivity.But present most of LPCVD conversion unit mostly is the monolithic conversion unit, and horizontal online load, and production efficiency is not high.And the monolithic conversion unit is unfavorable for cleaning or safeguards, needs to clean or must cut off equipment when safeguarding, is unfavorable for the raising of production efficiency and reduces cost.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of low-pressure chemical vapor deposition conversion unit, can further enhance productivity, reduce production costs and maintenance cost.
For achieving the above object, a kind of low-pressure chemical vapor deposition conversion unit provided by the invention comprises
Casing and the work rest that is positioned at described box house, described work rest has a plurality of supports that longitudinal interval is alternately arranged, and substrate is placed in described support both sides;
Described equipment also comprises first reaction gas pipeline and second reaction gas pipeline, and described first reaction gas pipeline and second reaction gas pipeline all have a plurality of air outlets, and reactant gases is introduced reaction compartment between the substrate.
Optionally, the air outlet of described first reaction gas pipeline is introduced reaction compartment from the top or the bottom of the reaction compartment between the substrate with gas; The air outlet of described second reaction gas pipeline is introduced reaction compartment from the bottom or the top of the reaction compartment between the substrate with gas.
Optionally, the air outlet of the air outlet of described first reaction gas pipeline and second reaction gas pipeline is introduced reaction compartment from the top or the bottom of the reaction compartment between the substrate with gas.
Optionally, arrange before and after the air outlet of the air outlet of described first reaction gas pipeline and second reaction gas pipeline.
Optionally, the air outlet of the air outlet of described first reaction gas pipeline and second reaction gas pipeline is arranged side by side.
Optionally, the air outlet of the air outlet of described first reaction gas pipeline and/or second reaction gas pipeline has refrigerating unit.
Compared with prior art, the present invention has the following advantages:
LPCVD conversion unit of the present invention longitudinal interval in chamber is placed substrate, and the space between substrate feeds different reactant gasess, controls the reaction of reactant gases, the substrate surface deposition of transparent conductive film in both sides by controlled temperature.LPCVD conversion unit of the present invention is simple to operate, be easy to control, and the production efficiency height has reduced production cost and maintenance cost.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.
Fig. 1 is the LPCVD conversion unit structural representation according to the embodiment of the invention;
Fig. 2 is LPCVD conversion unit structural representation according to another embodiment of the present invention;
Fig. 3 a and Fig. 3 b are plan structure synoptic diagram embodiment illustrated in fig. 2.
Described diagrammatic sketch is an illustrative and nonrestrictive, can not excessively limit protection scope of the present invention at this.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public concrete enforcement.
Fig. 1 is the LPCVD conversion unit structural representation according to the embodiment of the invention.As shown in Figure 1, the LPCVD conversion unit of the embodiment of the invention comprises casing 200 and is positioned at the work rest 210 of described casing 200 inside that described work rest 210 has a plurality of supports 230 that longitudinal interval is alternately arranged, described support 230 both sides placement substrate 221.Described equipment also comprises first reaction gas pipeline 310 and second reaction gas pipeline 320.First reaction gas pipeline 310 and second reaction gas pipeline 320 all have a plurality of air outlets, with reactant gases along the reaction compartment of introducing shown in the direction of arrow between the substrate.In the present embodiment, the air outlet of described first reaction gas pipeline 310 is introduced reaction compartment from the top of the reaction compartment between the substrate 221 with gas; The air outlet of second reaction gas pipeline 320 is introduced reaction compartment from the bottom of the reaction compartment between the substrate 221 with gas, shown in the direction of arrow.
In other embodiments, also can be that the air outlet of first reaction gas pipeline 310 is introduced reaction compartment from the bottom of the reaction compartment between the substrate 221 with gas; The air outlet of second reaction gas pipeline 320 is introduced reaction compartment from the top of the reaction compartment between the substrate 221 with gas.
Fig. 2 is LPCVD conversion unit structural representation according to another embodiment of the present invention.As shown in Figure 2, the LPCVD conversion unit of present embodiment comprises casing 200 and is positioned at the work rest 210 of described casing 200 inside that described work rest 210 has a plurality of supports 230 that longitudinal interval is alternately arranged, described support 230 both sides placement substrate 221.Described equipment also comprises first reaction gas pipeline 310 and second reaction gas pipeline 320.First reaction gas pipeline 310 and second reaction gas pipeline 320 all have a plurality of air outlets, with reactant gases along the reaction compartment of introducing shown in the direction of arrow between the substrate.In the present embodiment, the air outlet of the air outlet of described first reaction gas pipeline 310 and second reaction gas pipeline 320 is introduced reaction compartment from the top of the reaction compartment between the substrate 221 with gas, shown in the direction of arrow.
In other embodiments, reaction compartment also can be introduced with gas from the bottom of the reaction compartment between the substrate 221 in the air outlet of the air outlet of first reaction gas pipeline 310 and second reaction gas pipeline 320.
Fig. 3 a and Fig. 3 b are plan structure synoptic diagram embodiment illustrated in fig. 2.As shown in the figure, arrange before and after can being the air outlet 311 of first reaction gas pipeline 310 and the air outlet 321 of second reaction gas pipeline 320, also can be to be arranged side by side.
In other embodiments, the air outlet 321 of the air outlet 311 of first reaction gas pipeline and/or second reaction gas pipeline has refrigerating unit.
LPCVD conversion unit of the present invention utilizes the space of pipeline between substrate to feed different reactant gasess, and for example when deposition AZO nesa coating, first reaction gas pipeline 310 and second reaction gas pipeline 320 feed DEZ gas (Zn (C respectively
2H
5)
2) and water vapour, control the reaction of reactant gases, depositing zinc oxide (ZnO) film by controlled temperature.Simple to operate being easy to of LPCVD conversion unit of the present invention controlled, and the production efficiency height has reduced production cost and maintenance cost.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the protection domain of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (6)
1. a low-pressure chemical vapor deposition conversion unit is characterized in that: comprise
Casing and the work rest that is positioned at described box house, described work rest has a plurality of supports that longitudinal interval is alternately arranged, and substrate is placed in described support both sides;
Described equipment also comprises first reaction gas pipeline and second reaction gas pipeline, and described first reaction gas pipeline and second reaction gas pipeline all have a plurality of air outlets, and reactant gases is introduced reaction compartment between the substrate.
2. conversion unit according to claim 1 is characterized in that: the air outlet of described first reaction gas pipeline is introduced reaction compartment from the top or the bottom of the reaction compartment between the substrate with gas; The air outlet of described second reaction gas pipeline is introduced reaction compartment from the bottom or the top of the reaction compartment between the substrate with gas.
3. conversion unit according to claim 1 is characterized in that: the air outlet of the air outlet of described first reaction gas pipeline and second reaction gas pipeline is introduced reaction compartment from the top or the bottom of the reaction compartment between the substrate with gas.
4. conversion unit according to claim 3 is characterized in that: arrange before and after the air outlet of the air outlet of described first reaction gas pipeline and second reaction gas pipeline.
5. conversion unit according to claim 3 is characterized in that: the air outlet of the air outlet of described first reaction gas pipeline and second reaction gas pipeline is arranged side by side.
6. conversion unit according to claim 1 is characterized in that: the air outlet of the air outlet of described first reaction gas pipeline and/or second reaction gas pipeline has refrigerating unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110047008 CN102080220A (en) | 2011-02-28 | 2011-02-28 | Low-pressure chemical vapor deposition reaction equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110047008 CN102080220A (en) | 2011-02-28 | 2011-02-28 | Low-pressure chemical vapor deposition reaction equipment |
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| CN102080220A true CN102080220A (en) | 2011-06-01 |
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| CN 201110047008 Pending CN102080220A (en) | 2011-02-28 | 2011-02-28 | Low-pressure chemical vapor deposition reaction equipment |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1563483A (en) * | 2004-04-01 | 2005-01-12 | 南昌大学 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
| CN101265573A (en) * | 2008-03-14 | 2008-09-17 | 福建钧石能源有限公司 | Thin film deposition method |
| CN101295745A (en) * | 2008-04-15 | 2008-10-29 | 福建钧石能源有限公司 | Film, its forming method and thin-film solar cell with the same |
| CN201326014Y (en) * | 2008-12-30 | 2009-10-14 | 吉林庆达新能源电力股份有限公司 | Air intake device for plasma-enhanced chemical vapor deposition (PECVD) |
-
2011
- 2011-02-28 CN CN 201110047008 patent/CN102080220A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1563483A (en) * | 2004-04-01 | 2005-01-12 | 南昌大学 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
| CN101265573A (en) * | 2008-03-14 | 2008-09-17 | 福建钧石能源有限公司 | Thin film deposition method |
| CN101295745A (en) * | 2008-04-15 | 2008-10-29 | 福建钧石能源有限公司 | Film, its forming method and thin-film solar cell with the same |
| CN201326014Y (en) * | 2008-12-30 | 2009-10-14 | 吉林庆达新能源电力股份有限公司 | Air intake device for plasma-enhanced chemical vapor deposition (PECVD) |
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| C06 | Publication | ||
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| ASS | Succession or assignment of patent right |
Owner name: BEIJING JINGCHENG APOLLO OPTOELECTRONIC EQUIPMENT Effective date: 20110829 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20110829 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Applicant after: Fujian Golden Sun Solar Technic Co., Ltd. Co-applicant after: Beijing Jingcheng Boyang Optoelectronic Equipment Co.,Ltd. Address before: 362000 Jiangnan hi tech Zone, No. 1303 South Ring Road, Licheng District, Quanzhou, Fujian Applicant before: Fujian Golden Sun Solar Technic Co., Ltd. |
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Application publication date: 20110601 |