CN203878210U - Large-area film deposition PECVD (plasma enhanced chemical vapor deposition) electrode structure and device - Google Patents
Large-area film deposition PECVD (plasma enhanced chemical vapor deposition) electrode structure and device Download PDFInfo
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- CN203878210U CN203878210U CN201420216348.XU CN201420216348U CN203878210U CN 203878210 U CN203878210 U CN 203878210U CN 201420216348 U CN201420216348 U CN 201420216348U CN 203878210 U CN203878210 U CN 203878210U
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Abstract
The utility model relates to the technical field of PECVD (plasma enhanced chemical vapor deposition) filming, particularly a large-area film deposition PECVD electrode structure. The large-area film deposition PECVD electrode structure comprises an anode and a cathode, and is characterized in that the anode and cathode are arranged in parallel and in opposite; the anode and cathode are vertically arranged in a vacuum cavity of the device; the cathode is provided with a plurality of air supply holes and more than two vent holes; and a base plate is arranged near the front and back surfaces of the anode. The utility model also relates to a large-area film deposition PECVD device. According to the technical scheme, the structure and device can prevent high-order silane from generation, enhances the film deposition speed, improves the film quality, enhances the production efficiency and lowers the production cost.
Description
Technical field
The utility model relates to PECVD coating technique field, particularly a kind of large area film deposition PECVD electrode structure and equipment.
Background technology
In recent years, along with the development of flat-panel monitor (FPD) and solar cell, the update speed of product constantly promote, its size constantly strengthen, its performance constantly improve.Due to the increasing of product size, therefore produced equipment and technology that small-size product uses in the past, can not be applied to large size product.
If utilize the design concept production large size product of the equipment using in small-sized substrate, just there will be the problems such as sedimentation rate is slow, thickness is uneven, defect increases, efficiency of conversion is low, good article rate is low in the past.For example: in the production of thin-film solar cells, amorphous semiconductor battery is in the past the battery of unijunction, manufacture relatively easy, but, photoelectric transformation efficiency is below 10%, in recent years, along with scientific and technical progress, novel solar battery is in constantly exploitation, efficiency of conversion is constantly improving, thin film silicon solar cell is also like this, because the efficiency of conversion of unijunction solar cell is in the past relatively low, binode or the multijunction solar cell efficiency of conversion of exploitation are relatively high, most producers are all to multijunction solar cell (being also referred to as lamination solar cell) upgrading transition.
General amorphous silicon thin-film solar cell is on substrate, to form after transparency electrode; form again p (n) layer, i layer, n (p) layer, backplate; then, the protective layer of fitting overleaf as required, then add that a sheet glass etc. protects and extraction electrode.Certainly, do not get rid of each layer of mating type unijunction solar cell that utilizes crystal silicon and amorphous.
Many knot silicon-based film solar cells are identical with unijunction silicon-based film solar cells; it is in p (n)-i-n (p) structure (being commonly referred to as top layer or upper strata battery) of original non-crystalline silicon p (n) layer, i layer, n (p) layer; form again p (n)-i-n (p) structure (being generally referred to as upper strata or bottom cell) of p (n) layer that crystallite or polycrystalline form, i layer, n (p) layer, then; form again backplate; the protective layer of fitting overleaf; add again a slice glass protection, form laminated cell.According to circumstances need, between bottom and upper strata, sometimes also increase layer of transparent conductive layer.
Many knot silicon-based film solar cells are on the original solar cell basis being made up of as non-crystalline silicon (a-Si) film amorphous semiconductor films, have increased again the multiple-layer stacked structure of crystallite or crystalline semiconductor film.As superpose on the basis of original amorphous silicon battery microcrystal silicon (uc-Si) or polycrystal layer (c-Si), utilize different semiconductor films to absorb the sunlight of different wave lengths, can improve the photoelectric conversion capacity of product.But, in the production process of solar cell, even if can meet equipment and the technology of need of production in noncrystal membrane manufacture of solar cells, if in crystallite (crystallization) or amorphous semiconductor and amorphous semiconductor overlapping thin film solar battery, just can not meet the needs of production, therefore, equipment need to constantly improve, Technology Need constantly innovates.
In addition, except above-mentioned stack solar cell, also has the solar cell of three layers or multilayer.Namely need to continue to superpose similar structure on lamination solar cell.
Utilize traditional plate electrode in the time that the above large substrate of 1400mm × 1100mm forms film, due to the increase of area, be difficult to form in uniform thickness, evenly membranous, the particularly forming process of microcrystalline silicon film, sedimentation rate is slower.
After reaction, gas is difficult to discharge, can be on substrate continue to react with the continuation such as silane gas, formation high-order gas, particularly at the gas of the middle part of substrate, after reaction, gas is distant apart from the discharge outlet at two ends, gas after reaction, if during from the exhaust of substrate two ends, because substrate area is large, gas is in exhaust process, the stroke that flows is long, is difficult to avoid react gas later and can continues to react in exhaust, generates new material.The high-order silane that particularly reaction generates, in the situation that not discharging in time, can continue reaction, owing to can produce micropartical in reaction, because the reason of micropartical gravity is deposited in film.Now, if be horizontally set on the substrate of lower electrodes, will form film defects, reduce film quality and yield rate, particularly can cause above-mentioned photo attenuation and inefficacy attenuation problem.
In addition, the PECVD equipment that is horizontally disposed with substrate generally can only arrange a plate base and carry out thin film deposition, if deposit multi-piece substrate simultaneously, can only laterally strengthen the area of depositing electrode, for originally with regard to very large 5 generation equipment, continuing to add large equipment is obviously unpractical problem.The one-piece construction of equipment of only changing just can have higher production efficiency.
Utility model content
There is above-mentioned problem and provide can accelerate the exhaust velocity in film process when solving at present traditional large-sized product of PECVD device fabrication in the utility model, reduce the high-order silane that secondary reaction generates, reduce the defect of film surface, improve film quality, improve the film forming speed of microcrystal silicon or polysilicon simultaneously, form high-quality film, improve a kind of large area film deposition PECVD electrode structure and the equipment of the efficiency of conversion of thin film silicon solar cell.
For reaching above-mentioned functions, the technical scheme that the utility model provides is:
A kind of large area film deposition PECVD electrode structure, comprise anode and negative electrode, it is characterized in that: described anode is parallel with described negative electrode to be oppositely arranged, described anode and described negative electrode are vertically arranged in the vacuum cavity of equipment, on described negative electrode, be provided with a plurality of air vents and 2 above venting holes, substrate is placed near the tow sides of described anode.
Preferably, the distance of the described substrate of described air vent distance is less than the distance of the described substrate of described venting hole distance.
Preferably, a plurality of described air vents are arranged on described negative electrode equably, and the distance between two adjacent air vents is not more than 10mm.
Preferably, the total gas flow rate of described air vent is greater than the total gas flow rate of described venting hole.
Preferably, described venting hole is horn-like.
Preferably, the distance between two adjacent described air vents is not more than 7mm.
The utility model also provides a kind of large area film deposition PECVD equipment, comprises more than one vacuum cavity and the above-mentioned large area film deposition PECVD electrode structure of stating.
Preferably, between described negative electrode and described anode, be provided with travel mechanism, described travel mechanism drives described anode round mobile with respect to described negative electrode, and miles of relative movement is less than the distance between adjacent two described air feed ports.
Preferably, described negative electrode is fixedly mounted in described vacuum cavity, and described anode is fixed on dolly, is provided with running gear mobile inside and outside described vacuum cavity on described dolly.
Preferably, be set side by side with multiple PECVD electrode structures in described vacuum cavity, the back side of described negative electrode is provided with exhaust space, and described venting hole is communicated with described exhaust space.
The beneficial effects of the utility model are:
1, vertical substrate is placed, and is conducive to prevent curved substrate, compared with the mode of horizontal positioned, is conducive to increase substantially production efficiency in addition;
2, owing to being evenly provided with multiple air vents on negative electrode, be therefore conducive to form the film of uniform film thickness on large-area substrates;
3, by multiple venting holes are set, can drain fast reacted gas, avoid the generation of high-order silane etc., improve the quality of film, reduce production costs.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment mono-;
Fig. 2 is the structural representation that omits air feed gas circuit in negative electrode;
Fig. 3 is the structural representation that omits exhaust gas circuit in negative electrode;
Fig. 4 is the structural representation of embodiment bis-.
Embodiment
Below in conjunction with accompanying drawing 1 to accompanying drawing 4, the utility model is further elaborated:
Embodiment mono-:
A kind of large area film deposition PECVD electrode structure as shown in Figure 1, comprise anode 101 and negative electrode 102, anode 101 is parallel with negative electrode 102 to be oppositely arranged, anode 101 and negative electrode 102 are vertically arranged in the vacuum cavity 100 of equipment, on negative electrode 102, be provided with 105 and 2 above venting holes 107 of a plurality of air vents, substrate 103 is placed near the tow sides of anode 101.
For the ease of narration, we combine the equipment of large area film deposition PECVD electrode structure of the present utility model and employing kind electrode structure to be described explanation.
Equipment of the present utility model contains multiple vacuum cavities 009, in the present embodiment, have at least in two vacuum cavities 009 and be provided with electrode structure of the present utility model, as shown in Figure 1, at interior vertical and 101 and 4 negative electrodes 102 of two anodes that be arranged in parallel of vacuum cavity 009, the tow sides of each anode 101 are relatively set with respectively a negative electrode 102, in the present embodiment, anode 101 is fixedly mounted on dolly 009, and dolly 009 can be in the inside and outside motion of vacuum cavity 009.
Near the tow sides of the interior Anodic 101 of dolly 009, be vertically fixed with respectively substrate 103, substrate 103 and anode 101 opposing parallel, in the present embodiment, substrate 103 uses glass substrate.Interior 105 and 2 the above venting ports 107 of several air feed ports that are evenly provided with of negative electrode 102.Although utilize 2 venting ports 107 can exclude the rear gas of reaction, but, there is uniform gaseous mass in order to improve as much as possible substrate 103 surfaces, or uniform gas distribution, equably gas after reaction is got rid of in time, therefore, be preferably in multiple venting ports 107 are set on negative electrode 102 equably, for the ease of exhaust, venting port 107 can be made horn-like to improve exhaust efficiency.
As shown in Figure 2, in the present embodiment, be evenly provided with multiple air feed ports 105 and venting port 107 on negative electrode 102, for the ease of understanding, omitted air feed gas circuit 106 in Fig. 2, venting port 107 is arranged on around the middle of 4 adjacent air vents 105.Distance between air feed port 105 is preferably in 10cm.More wish in 7cm.Owing to connecting high frequency electric source on negative electrode 102, on negative electrode 102 surfaces, particularly can form in air feed port 105 ends electric field concentrate, plasma intensity is also relatively strong, the gas spraying from air feed port 105 can be heated, encourage, form radical, be finally deposited as film.But, due to internal field, plasma space is relatively little, if the distance between air feed port 105 is greater than 10cm, the plasma density of two air feed port 105 intermediate formation is relatively little, can be reduced in film forming thickness on substrate 103, finally cause the film meeting uneven thickness on substrate, therefore, be within 10mm, within being preferably in 7cm, can form like this film more uniformly.
Exhaust gas circuit 108 and air feed gas circuit 106 are connected with venting hole 107 and air vent 105 respectively.Because exhaust gas circuit 108 and air feed gas circuit 106 are relatively expending man-hour aspect processing, also can utilize stainless steel tube and stainless steel plate welding to form negative electrode 102.
In order to prevent in deposition process, produce powder, behind dolly 009 location, electrode surface and gravity direction almost parallel, electrode become vertical cube to.In the time that substrate 103 uses glass substrate, because glass substrate can be carried under the situation of standing, not only can not produce the lower curved phenomenon of glass substrate, but also there is convenient operation.
Because anode 101 of the present utility model and negative electrode 102 adopt vertical setting, therefore on an anode 101, two substrates 103 can be set, traditional 2 times of being horizontally disposed with number, 2 anodes 101 are set 4 plate bases 103 just can be set, along with anode 101 arranges increasing of number, the quantity of substrate 101, compared with being horizontally disposed with the number of substrate, can improve exponentially, therefore, stand and substrate mode is set can enhances productivity significantly.
In anode 101, be provided with well heater 104, near the substrate 103 of that is arranged on anode 101 can be utilized to radiation heating, make substrate 103 keep constant temp, the well heater 104 of anode 101 interior settings utilizes temperature regulator to control (not shown), temperature regulator basis is to substrate 103 detected temperatures, temperature to well heater 104 is controlled, the temperature of substrate 103 is remained in certain temperature range, can guarantee like this stable of film-forming temperature, be conducive to form homogeneous film thickness and evenly membranous.In use, utilize substrate fixture 109 by fixing substrate 103.
In the present embodiment, air feed port 105 is less than the distance of venting port 107 apart from substrate 103 apart from the distance of substrate 103.Because film forming gas will react then film former on substrate 103 between the gas in vacuum cavity 100, therefore, the gas flow of air feed port 105 is greater than the flow of venting port 107, air feed port 105 end faces are as far as possible little, in addition, the area of air feed port 105 is greater than the area of left and right venting port 107, could keep so stable gas reaction, reasonably configure off-gas pump, avoid energy dissipation.
The total gas flow rate that air vent 105 total gas flow rates are greater than venting port 107 is because unstripped gas will be reacted after entering cavity accordingly, if free air delivery is greater than air demand, the reaction times of unstripped gas in cavity can be very short, be unfavorable for decomposition and the deposition of gas, can cause to a certain extent the waste of gas, more importantly can reduce the sedimentation velocity of film in cavity.
After equipment utilization vacuum pump of the present utility model (not marking in figure) vacuumizes vacuum cavity 100, under high vacuum pressure, between negative electrode 102 and anode 101, apply high frequency electric source, form electric field, can form electric field concentration phenomenon effect in the end of the air feed port 105 of negative electrode 102, under electric field action, electronics and gas molecule collision, gas delivery becomes plasma, air feed port 105 forms and produces isoionic starting point, and the heated excitation of the gas of sending to, in plasma space 111, produce glow discharge, on substrate 103, deposit thin film.
In the time of deposit film, the pressure of air feed port 105 is greater than the pressure in plasma space 111, simultaneously, the venting port 107 far away apart from substrate 103 is connected with vacuum pump for vent (not shown), therefore, the gas that reacted gas can newly be sent in time squeezes a side far away apart from substrate 103, that is to say near that reaction gas later can be squeezed venting port 107 in time, then by exhaust gas circuit 108 by reacted gas from relief outlet 202 remover apparatus, process accordingly.After kind electrode structure can have been avoided reaction, gas is as SiH
2deng with the secondary response again of silane gas, generate high-order silane (Si
nh
m) gas.Suppress the reaction repeatedly of gas after reaction, reduce or got rid of and in film former, do not wished the high-order silane etc. that occurs, the powder or the film that generate due to high-order silane etc. are reduced, the quality of the film improving, avoid the photo attenuation phenomenon causing due to high-order silane etc., thereby can further improve the efficiency of conversion of electrooptical device.
Usually, on negative electrode 102, there are multiple air feed ports 105 and at least 2 venting ports 107, in order to realize uniform film thickness and uniform film quality, can the low production of high-level efficiency,
In planar cathode 102, be provided with multiple exceed negative electrode 102, equally distributed air feed ports 105, on planar cathode 102, be also provided with venting port 107 simultaneously, venting port 107 is in order to get rid of reacted gas, the SiH that has avoided reaction to generate
2continue to react with silane gas Deng gas, undesirable high-order silane etc. in film former, high-order silane is except meeting generates Powdered defect, still cause one of reason of photo attenuation, therefore, at least 2 venting ports 107 are set on substrate 103, can add so getting rid of in time of gas after fast response, can suppress the appearance of high-order silane gas etc.
Due to the maximization of product, be unfavorable for the independent carrying of substrate 103, in order can easily substrate 103 to be arranged near electrode 101, in the present embodiment, anode 101 is fixedly mounted on dolly 009, becomes one with dolly 009, negative electrode 102 is fixedly installed in vacuum cavity 100, the bottom of dolly 009 is provided with running gear 112 can move dolly 009 between vacuum cavity 100 is inside and outside, and in the present embodiment, running gear 112 adopts roller.Be convenient to like this from vacuum cavity 009 outside, substrate 103 be arranged near anode 101, in process of production, generally by mechanical manipulator or special loader, substrate 103 sent into dolly 009.In order to prevent bringing damage to the film on substrate 103 surfaces or substrate 103 surfaces, in the utility model, not directly contact between substrate 103 and anode 101, but substrate fixture 109 fixing bases 103 that utilize anode 101 top and the bottom to arrange, reduce some unnecessary contacts, prevented the defects such as the scuffing of product.
Vacuum cavity 100 inside are fixed wtih negative electrode 102, air feed gas circuit 106 on negative electrode 102 is connected with the corresponding gas circuit outside equipment respectively with exhaust gas circuit 108, exhaust gas circuit 108 is connected with exhaust vacuum valve, dolly 009 enter vacuum cavity 100 interior after, substrate 103 with negative electrode 102 in relative and parastate, utilize well heater 104 radiation of anode 101 interior settings, substrate 103 is heated equably, anode 101, negative electrode 102 are connecting respectively high frequency electric source, vacuumizing under state, carry out thin film deposition.
As shown in Figure 3, for the ease of understanding, in Fig. 3, omit exhaust gas circuit 108, on the air feed port 302 of the air feed gas circuit 106 of negative electrode 102, be provided with multiple gas inletes, connecting at least 2 airway (not shown)s, film forming desired gas is delivered to negative electrode 102 by airway, in the air feed gas circuit 106 of negative electrode 102, flow while mix, finally spray from air feed port 105.
In the present embodiment, air feed gas circuit 106 is roughly the same with exhaust gas circuit 108, and air feed gas circuit 106 and exhaust gas circuit 108 are arranged in the top and the bottom of the thickness direction of negative electrode 102.
In order to make the film of deposition more even, between negative electrode 102 and anode 101, be provided with travel mechanism's (not shown), travel mechanism drives anode 101 to come and go relative movement with respect to negative electrode 102 circulations, and miles of relative movement is less than the distance between adjacent two air feed ports 105.In the present embodiment, travel mechanism is the cam that is arranged on dolly 009 bottom, and cam drives dolly 009 slowly to move up and down while rotation, therefore can make film thickness more even, and film quality is more stable.
Embodiment bis-:
In the present embodiment, the part identical with embodiment mono-used identical label, in the present embodiment mainly around being described in detail with embodiment mono-distinct portions.
The present embodiment is communicated with and carries out exhaust with venting hole 107 by exhaust space 108a.
As shown in Figure 4, in the present embodiment, exhaust space 108a forms in the following way: be to utilize the space between negative electrode 102 back sides and vacuum cavity 100 sidewalls to form exhaust space 108a near the exhaust space 108a of vacuum cavity 100 sidewalls; The exhaust space 108a of middle portion consists of two negative electrode 102 back sides in the middle of being positioned at.Compare with implementing example 1, although implement the large negative electrode 102 in vacuum cavity 100 spaces that the equipment of example 2 takies process comparatively easy.
The above embodiment, it is preferred embodiments of the present utility model, be not to limit practical range of the present utility model, the equivalence of doing according to structure, feature and principle described in the utility model claim therefore all changes or modifies, and all should be included in the utility model patent claim.
Claims (10)
1. a large area film deposition PECVD electrode structure, comprise anode and negative electrode, it is characterized in that: described anode is parallel with described negative electrode to be oppositely arranged, described anode and described negative electrode are vertically arranged in the vacuum cavity of equipment, on described negative electrode, be provided with a plurality of air vents and 2 above venting holes, substrate is placed near the tow sides of described anode.
2. large area film deposition PECVD electrode structure as claimed in claim 1, is characterized in that: the distance of the described substrate of described air vent distance is less than the distance of the described substrate of described venting hole distance.
3. large area film deposition PECVD electrode structure as claimed in claim 1, is characterized in that: a plurality of described air vents are arranged on described negative electrode equably, and the distance between two adjacent air vents is not more than 10mm.
4. large area film deposition PECVD electrode structure as claimed in claim 1, is characterized in that: the total gas flow rate of described air vent is greater than the total gas flow rate of described venting hole.
5. large area film deposition PECVD electrode structure as claimed in claim 1, is characterized in that: described venting hole is horn-like.
6. large area film deposition PECVD electrode structure as claimed in claim 3, is characterized in that: the distance between two adjacent described air vents is not more than 7mm.
7. a large area film deposition PECVD equipment, comprises more than one vacuum cavity, it is characterized in that: described large area film deposition PECVD equipment also comprises the large area film deposition PECVD electrode structure as described in claim 1 to 6 any one.
8. large area film deposition PECVD equipment as claimed in claim 7, it is characterized in that: between described negative electrode and described anode, be provided with travel mechanism, described travel mechanism drives described anode round mobile with respect to described negative electrode, and miles of relative movement is less than the distance between adjacent two described air feed ports.
9. large area film deposition PECVD equipment as claimed in claim 7, is characterized in that: described negative electrode is fixedly mounted in described vacuum cavity, and described anode is fixed on dolly, is provided with running gear mobile inside and outside described vacuum cavity on described dolly.
10. the deposition of the large area film as described in claim 7 to 9 any one PECVD equipment, it is characterized in that: in described vacuum cavity, be set side by side with multiple PECVD electrode structures, the back side of described negative electrode is provided with exhaust space, and described venting hole is communicated with described exhaust space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420216348.XU CN203878210U (en) | 2014-04-29 | 2014-04-29 | Large-area film deposition PECVD (plasma enhanced chemical vapor deposition) electrode structure and device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420216348.XU CN203878210U (en) | 2014-04-29 | 2014-04-29 | Large-area film deposition PECVD (plasma enhanced chemical vapor deposition) electrode structure and device |
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| Publication Number | Publication Date |
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| CN203878210U true CN203878210U (en) | 2014-10-15 |
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| CN201420216348.XU Expired - Fee Related CN203878210U (en) | 2014-04-29 | 2014-04-29 | Large-area film deposition PECVD (plasma enhanced chemical vapor deposition) electrode structure and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938187A (en) * | 2014-04-29 | 2014-07-23 | 东莞职业技术学院 | Large-area thin-film deposition PECVD (Plasma Enhanced Chemical Vapor Deposition) electrode structure and equipment |
-
2014
- 2014-04-29 CN CN201420216348.XU patent/CN203878210U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938187A (en) * | 2014-04-29 | 2014-07-23 | 东莞职业技术学院 | Large-area thin-film deposition PECVD (Plasma Enhanced Chemical Vapor Deposition) electrode structure and equipment |
| CN103938187B (en) * | 2014-04-29 | 2016-07-06 | 东莞职业技术学院 | Large area film deposition PECVD electrode structure and equipment |
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