CN202626288U - Plasma enhanced chemical vapor deposition (PECVD) system configuration for heterojunction solar cell - Google Patents

Plasma enhanced chemical vapor deposition (PECVD) system configuration for heterojunction solar cell Download PDF

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Publication number
CN202626288U
CN202626288U CN 201220314266 CN201220314266U CN202626288U CN 202626288 U CN202626288 U CN 202626288U CN 201220314266 CN201220314266 CN 201220314266 CN 201220314266 U CN201220314266 U CN 201220314266U CN 202626288 U CN202626288 U CN 202626288U
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CN
China
Prior art keywords
reaction chamber
heterojunction solar
system configuration
solar cell
area
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Expired - Fee Related
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CN 201220314266
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Chinese (zh)
Inventor
周文彬
刘幼海
刘吉人
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Jifu New Energy Technology Shanghai Co Ltd
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Jifu New Energy Technology Shanghai Co Ltd
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Priority to CN 201220314266 priority Critical patent/CN202626288U/en
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Publication of CN202626288U publication Critical patent/CN202626288U/en
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Expired - Fee Related legal-status Critical Current

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Abstract

The utility model aims to provide plasma enhanced chemical vapor deposition (PECVD) system configuration for a heterojunction solar cell. The PECVD system configuration for the heterojunction solar cell is divided into two parts by an automatic exchange area and sequentially comprises a loading area, the automatic exchange area, a first bearing chamber, a first reaction chamber, a second reaction chamber, a second bearing chamber, a third reaction chamber, a fourth reaction chamber and an unloading area which are linearly and oppositely arranged to form the whole configuration. The front side and the back side of a silicon substrate of the heterojunction solar cell can be subjected to thin film deposition, an extremely large elastic space is provided for future capacity expansion, and the same complete configuration can be arranged as long as the automatic exchange area is lengthened. The whole PECVD system configuration for the heterojunction solar cell is linear, a positive pressure inert gas circulating system is arranged in the automatic exchange area, an area which is high in cleanliness and used for preventing environmental pollution is not required to be separately arranged, and production cost is effectively reduced.

Description

Heterojunction solar battery plasma reinforced chemical vapour deposition system configuration
Affiliated technical field
The utility model relates to heterojunction solar battery plasma reinforced chemical vapour deposition system configuration, particularly a kind of heterojunction solar battery plasma reinforced chemical vapour deposition system that is used for.
Background technology
In the solar cell industry; Silicon solar cell with it up to 20% efficiency of conversion, sophisticated manufacture craft; In industrial production in occupation of dominant position; Yet receive the influence of silicon materials price and loaded down with trivial details cell making process, the cost of silicon solar cell is high, is seriously restricting the popularization on a large scale of solar cell at present.This kind heterojunction solar battery utilizes the simple process deposit film on silicon substrate, thus the preparation heterojunction solar battery.Yet the process structure of this kind solar cell need respectively deposit one deck amorphous silicon membrane at the front and the reverse side of silicon substrate, and traditional orthoscopic continuous coating system can adapt to for the silicon substrate front fully, but can't depositional coating to silicon substrate reverse side; If adopt two orthoscopic continuous coating systems, the surface contamination problem after the silicon substrate transfer goes out coating system is arranged again, the problems referred to above are all demanded the exploitation that a system configuration adapts to the novel solar cell of this kind urgently.
Summary of the invention
The utility model main purpose system provides heterojunction solar battery plasma reinforced chemical vapour deposition system configuration, improves existing orthoscopic continuous coating system and can't effectively be applicable to heterojunction solar battery and solve in the silicon substrate front and the problem of reverse side deposition of amorphous silicon films and surface contamination.
In order to reach above-mentioned utility model purpose; The technical scheme of the utility model provides heterojunction solar battery plasma reinforced chemical vapour deposition system configuration; The setting that orthoscopic is relative, the middle system that is oppositely arranged the isolation with a dial exchange is two part; This heterojunction solar battery plasma reinforced chemical vapour deposition system configuration comprises loading zone, dial exchange, first compartment, first reaction chamber, second reaction chamber, second compartment, the 3rd reaction chamber, the 4th reaction chamber and unload zone in regular turn, and wherein characteristics are:
Said plasma reinforced chemical vapour deposition system configuration linearly and relatively configuration setting, wherein the dial exchange is provided with the positive-pressure type rare gas element recycle system;
Said plasma reinforced chemical vapour deposition system configuration first compartment, a plurality of plated film reaction chamber constitute the function of the positive thin film deposition of silicon chip;
Said plasma reinforced chemical vapour deposition system configuration second compartment, a plurality of plated film reaction chamber constitute the function of silicon chip reverse side thin film deposition;
Said plasma reinforced chemical vapour deposition system configuration linearly and relatively configuration setting; This setting can form the thin film deposition that a whole configuration is accomplished heterojunction solar battery silicon substrate front and reverse side; This kind setting has great elasticity for following production capacity expansion; As long as, can an identical complete configuration be set with the dial exchange lengthening;
In the whole type that is in line that makes of above-mentioned heterojunction solar battery plasma reinforced chemical vapour deposition system configuration; The positive-pressure type rare gas element recycle system is set in the dial exchange; Need not the pollution that the high zone of cleanliness factor prevents environment is set separately again, effectively reduce production costs.
Description of drawings
Fig. 1 system is the utility model synoptic diagram.
Fig. 2 system is another example schematic of the utility model.
The primary clustering nomenclature.
100... system configuration.
101... first area.
102... first compartment.
103... first reaction chamber.
104... second reaction chamber.
105... second compartment.
106... the 3rd reaction chamber.
107... the 4th reaction chamber.
108... dial exchange.
109... separation valve door.
110... loading zone.
111... unload zone.
200... another instance of the utility model.
201... second area.
202... maintenance area.
Embodiment
In order to facilitate simple understanding of the utility of the content and other advantages and features of the effect can be reached more apparent, with the utility model is hereby drawings will be described in detail as follows: See Figure 1, the main purpose of the utility model Department of heterojunction solar cells to provide plasma-enhanced chemical vapor deposition system configuration, the plasma enhanced chemical vapor deposition system configuration and relatively straight configuration settings, including sequentially connected load region 110, the automatic exchange zone 108 and unloading area 111 consisting of a substrate loading, exchange and transfer different deposition systems containing part; wherein the first bearing chamber 102, the first reaction chamber 103, a second reaction chamber 104 constitute the upper half; wherein the first two bearing chamber 105, the third reaction chamber 106, the fourth chamber 107 constitute a lower part of the reaction.
Simultaneously, the whole basic configuration of accomplishing the first area of said heterojunction solar battery plasma reinforced chemical vapour deposition system configuration, this basic configuration can be accomplished the thin film deposition of silicon substrate front and reverse side.
In heterojunction solar battery plasma reinforced chemical vapour deposition system configuration deposition process; Silicon substrate at first is sent to dial exchange 108 by loading zone 110; See through separation valve door 109 entering first compartment 102 again and carry out pre-treatment, comprise the action that silicon substrate is vacuumized and heats; Get into first reaction chamber 103 through separation valve door 109 again and carry out vacuum reaction; Get into second reaction chamber 104 through separation valve door 109 again and carry out vacuum reaction; Said vacuum reaction just dissociates the reactant gases that got into by shower nozzle by high frequency electric source and produces plasma body and carry out thin film deposition under vacuum one level pressure chamber; So reach and accomplish the positive thin film deposition of silicon substrate, silicon substrate gets into first reaction chamber 103 through separation valve door 109 again and first compartment 102 is back to dial exchange 108; Be sent to second compartment 105 by dial exchange 108 through separation valve door 119 again and carry out pre-treatment, comprise the action that silicon substrate is vacuumized and heats; Get into the 3rd reaction chamber 106 through separation valve door 109 again and carry out vacuum reaction; Get into the 4th reaction chamber 107 through separation valve door 109 again and carry out vacuum reaction, so reach the thin film deposition of accomplishing the silicon substrate reverse side, silicon substrate gets into the 3rd reaction chamber 106 through separation valve door 109 again and second compartment 105 is back to dial exchange 104; Being sent to unload zone 111 afterwards unloads.
In above-mentioned heterojunction solar battery plasma reinforced chemical vapour deposition system configuration deposition; After silicon substrate is accomplished and is passed back dial exchange 108 after the positive thin film deposition; Before passing to system's Lower Half deposit film; Can in dial exchange 108, accomplish the turn-over action of silicon substrate, therefore when importing Lower Half into, can accomplish the reverse side thin film deposition of silicon substrate, simultaneously; Because can prevent effectively that for charging into the rare gas element circulation silicon substrate transfer from going out vacuum system by the problem on environmental pollution surface, promotes the quality of thin film deposition in the dial exchange 108.
The utility model also provides another kind of instance, sees also Fig. 2, after completion first area 101 integral body are provided with; Prolong the length of dial exchange 108, can dispose another complete area again to form the configuration of second area 201, the production capacity in the time of can increasing volume production thus; Effectively saving system is provided with cost, simultaneously, can utilize zone line that maintenance area 202 is set; Need not to be provided with separately isolated area, effectively save occupation area of equipment.
In summary, the utility model to break through previous technical structure, although it did increase has reached desired effect, and also those who are not familiar with the art of thinking and easy, it shall have the progressive, practical, significantly has meet the application requirements of the utility model, except for the above detailed description of the utility model system for one possible embodiment of specific instructions, the embodiment is not intended to limit the scope of utility model patents, utility models and who have not departing from the spirit of art The implementation of whom equivalent or change, shall be included in the case of patent scope.

Claims (3)

1. heterojunction solar battery plasma reinforced chemical vapour deposition system configuration, the setting that orthoscopic is relative middlely is two part with a dial exchange with the system's isolation that is oppositely arranged; This heterojunction solar battery plasma reinforced chemical vapour deposition system configuration comprises loading zone, dial exchange, first compartment, first reaction chamber, second reaction chamber, second compartment, the 3rd reaction chamber, the 4th reaction chamber and unload zone in regular turn.
2. the heterojunction solar battery plasma reinforced chemical vapour deposition system configuration of being narrated according to 1 of claim the, wherein this dial exchange is provided with the rare gas element recycle system.
3. the heterojunction solar battery plasma reinforced chemical vapour deposition system configuration of being narrated according to 1 of claim the; Loading zone, dial exchange, first compartment, first reaction chamber, second reaction chamber, second compartment, the 3rd reaction chamber, the 4th reaction chamber and unload zone are accomplished the configuration of first area; Can control exhibition again with this configuration is second area.
CN 201220314266 2012-07-02 2012-07-02 Plasma enhanced chemical vapor deposition (PECVD) system configuration for heterojunction solar cell Expired - Fee Related CN202626288U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220314266 CN202626288U (en) 2012-07-02 2012-07-02 Plasma enhanced chemical vapor deposition (PECVD) system configuration for heterojunction solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220314266 CN202626288U (en) 2012-07-02 2012-07-02 Plasma enhanced chemical vapor deposition (PECVD) system configuration for heterojunction solar cell

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CN202626288U true CN202626288U (en) 2012-12-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103789750A (en) * 2014-02-20 2014-05-14 厦门大学 Plasma enhanced chemical vapor deposition device
CN109980042A (en) * 2018-12-19 2019-07-05 黄剑鸣 HIT heterojunction solar battery manufacturing equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103789750A (en) * 2014-02-20 2014-05-14 厦门大学 Plasma enhanced chemical vapor deposition device
CN103789750B (en) * 2014-02-20 2015-11-11 厦门大学 Plasma reinforced chemical vapour deposition apparatus
CN109980042A (en) * 2018-12-19 2019-07-05 黄剑鸣 HIT heterojunction solar battery manufacturing equipment

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121226

Termination date: 20150702

EXPY Termination of patent right or utility model