CN101851748A - Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system - Google Patents
Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system Download PDFInfo
- Publication number
- CN101851748A CN101851748A CN200910011028A CN200910011028A CN101851748A CN 101851748 A CN101851748 A CN 101851748A CN 200910011028 A CN200910011028 A CN 200910011028A CN 200910011028 A CN200910011028 A CN 200910011028A CN 101851748 A CN101851748 A CN 101851748A
- Authority
- CN
- China
- Prior art keywords
- chamber
- pecvd
- silicon nitride
- tectorial membrane
- membrane preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to a photovoltaic cell sheet film preparation device, in particular to a full-automatic large panel PECVD silicon nitride tectorial membrane preparation system which continuously works in vacuum condition in multiple chambers. The tectorial membrane preparation system comprises an automatic conveying and loading platform, a preheating chamber, a PECVD chamber, a cooling chamber and an automatic conveying and unloading platform, wherein the preheating chamber, the PECVD chamber and the cooling chamber are successively installed on a rack, the automatic conveying and loading platform is connected with the preheating chamber and the cooling chamber, and the preheating chamber, the PECVD chamber and the cooling chamber are respectively connected with a vacuum air-bleed system by a gas pipeline. The invention adopts the full-automatic large panel PECVD silicon nitride tectorial membrane preparation system which adopts combined multiple chambers to work in vacuum; and under the condition of working, the invention still can obtain the technical data of tubular PECVD and imported plane-type PECVD.
Description
Technical field
The present invention relates to photovoltaic cell sheet film preparation device, the full-automatic large panel PECVD of specifically a kind of multi-cavity chamber non-stop run under vacuum condition (plasma enhanced chemical vapor deposition, Plasma Enhanced Chemical Vapor Deposition) silicon nitride tectorial membrane preparation system.
Background technology
In order to improve photovoltaic crystal silicon battery photoelectric transformation efficiency, need be at photovoltaic crystal silicon battery surface preparation antireflection film; And the main using plasma of preparation antireflection film strengthens chemical gaseous phase depositing process (being the PECVD method), adopts the PECVD method also can play passivation simultaneously, reduces the rate of decay of photovoltaic cell component.The PECVD method is that technology is the most ripe in the several method of preparation thin-film material, operation is comparatively simply a kind of, and continuous automatic production can realize unmanned production, and performance is more outstanding aspect preparation overlarge area uniformity of film simultaneously.The equipment of the preparation antireflection film that present stage uses in the photovoltaic field has two kinds, and a kind of is the PECVD equipment of tubular structure, and the tables of equipment of this structure time production overlong time causes output very low, does not have the quantity-produced ability; Another kind of is import multi-cavity chamber flat-plate type PECVD equipment, can realize automatic production, but equipment is huge, and Costco Wholesale is very high.
Summary of the invention
In order to solve the problems referred to above that existing preparation antireflection film equipment exists, the object of the present invention is to provide that work in a kind of multi-cavity chamber, knockdown full-automatic large panel PECVD silicon nitride tectorial membrane preparation system under vacuum condition.
The objective of the invention is to be achieved through the following technical solutions:
The present invention includes automatic transmission loading stage, preheating chamber, PECVD chamber, cooling room and transmit relieving platform automatically, wherein preheating chamber, PECVD chamber and cooling room are installed on the stand successively, automatically the transmission loading stage links to each other with preheating chamber, transmits relieving platform automatically and links to each other with cooling room; Preheating chamber, PECVD chamber and cooling room are connected with vacuum-pumping system by gas piping respectively.
Wherein: described preheating chamber can be a plurality of, is connected in series between automatic transmission loading stage and the PECVD chamber; Described cooling room can be a plurality of, is connected in series in the PECVD chamber and transmits between the relieving platform automatically; The PECVD chamber can be a plurality of, is connected in series between preheating chamber and the cooling room; Described preheating chamber, PECVD chamber and cooling room are installed on separately the stand by bolt respectively, connect by bolt between each stand, automatically the transmission loading stage is connected by bolt with the stand of carrying preheating chamber, transmits relieving platform automatically and is connected by bolt with the stand of carrying cooling room; Automatically be equipped with mechanical manipulator on transmission loading stage and the automatic transmission relieving platform.
Advantage of the present invention and positively effect are:
The full-automatic large panel PECVD silicon nitride tectorial membrane preparation system that the present invention adopts built-up type multi-cavity chamber to work under vacuum condition under the situation of work, can reach the technical indicator of tubular type PECVD and import flat-plate type PECVD equally, and is specific as follows:
1. can nobody automatically or manually realize photovoltaic cell sheet silicon nitride (SiNx) film preparation, omnidistance with industrial microcomputer realization control automatically.
2. the higher ratio of performance to price.
3. production capacity 30MW/ (1700/per hour), production capacity can double.
4. in the film uniformity sheet (125mm * 125mm)≤± 3%, between sheet≤± 4%, between batch≤± 5%.
5. ranges of indices of refraction: 2.0～2.1 batches consistence: ± 5%.
6. have perfect warning function and safety mutually-locking device.
7. vacuum dry type cleaning.
8. 300～400 ℃ of film-forming temperatures are continuous adjustable.
9. can be applicable to the film preparation of various photovoltaic crystal silicon sheet according to the combination of the customized multi-cavity body of user multi-work-station.
10. simple to operate, continuous and automatic can be realized unmanned production.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Wherein: 1 is to transmit loading stage automatically, and 2 is preheating chamber, and 3 is the PECVD chamber, and 4 is cooling room, and 5 is to transmit relieving platform automatically, and 6 is vacuum-pumping system, and 7 is gas piping, and 8 is loading plate.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
As shown in Figure 1, the present invention includes automatic transmission loading stage 1, preheating chamber 2, PECVD chamber 3, cooling room 4 and transmit relieving platform 5 automatically, wherein preheating chamber 2, PECVD chamber 3 and cooling room 4 are installed on the stand successively, preheating chamber 2, PECVD chamber 3 and cooling room 4 are connected by bolt with separately stand respectively, connect by bolt between each stand, automatically transmission loading stage 1 is connected by bolt with the stand of carrying preheating chamber 2, transmits relieving platform 5 automatically and is connected by bolt with the stand of carrying cooling room 4.Preheating chamber 2, PECVD chamber 3 and cooling room 4 are connected with vacuum-pumping system 6 by gas piping 7 respectively.In order to reach the purpose of growth multilayer film, the preheating chamber 2 among the present invention, PECVD chamber 3 and cooling room 4 can expand to a plurality of respectively, are connected in series, and need guarantee during installation to be connected in series with other chambers after identical chamber is connected in series again; That is,, after being connected in series, a plurality of preheating chambers 2 are connected in series in again between automatic transmission loading stage 1 and the PECVD chamber 3 if preheating chamber 2 is a plurality of; If PECVD chamber 3 is a plurality of, after being connected in series, a plurality of PECVD chamber 3 is connected in series in again between preheating chamber 2 and the cooling room 4; If a plurality of cooling room 4 is a plurality of, a plurality of cooling rooms 4 are connected in series in PECVD chamber 3 and automatically between the transmission relieving platform 5.
The present invention also can load and unload photovoltaic crystal silicon sheet according to the user to do not coexist automatically transmission loading stage 1 and be equipped with mechanical manipulator on the transmission relieving platform 5 automatically of the requirement of technical process, realizes unmanned full-automatic production.
Principle of work of the present invention is:
In Fig. 1, preheating chamber 2, PECVD chamber 3 and cooling room 4 are fixed by bolts on separately the stand according to the position respectively, link together with bolt again between each stand, again vacuum-pumping system 6 usefulness gas pipings 7 are connected with preheating chamber 2, PECVD chamber 3 and cooling room 4 respectively; To transmit loading stage 1 then automatically and link to each other with preheating chamber 2, and transmit relieving platform 5 automatically and link to each other with cooling room 4 by bolt by bolt.
During work, at first photovoltaic crystal silicon sheet is placed on the loading plate 8 of automatic transmission loading stage 1, the vacuum tightness of preheating chamber 2 is with extraneous when identical, vacuum securing device on the preheating chamber 2 is opened, by automatic transmission system loading plate 8 is sent in the preheating chamber 2 then and preheats, close the vacuum securing device, bleed by vacuum-pumping system 6 simultaneously; After loading plate 8 was preheating to 500 ℃, when the vacuum tightness of preheating chamber 2 and PECVD chamber 3 was identical, the vacuum securing device between PECVD chamber 3 and the preheating chamber 2 was opened, and by automatic transmission system loading plate 8 was sent to and carried out silicon nitride tectorial membrane in the PECVD chamber 3; PECVD chamber 3 is made up of diffuser and heating unit and housing three parts, and coating technique requires to carry out under vacuum condition.After silicon nitride tectorial membrane is finished, bleed by 6 pairs of cooling rooms 4 of vacuum-pumping system, when PECVD chamber 3 is identical with cooling room 4 vacuum tightnesss, vacuum securing device between PECVD chamber 3 and the cooling room 4 is opened, by automatic transmission system loading plate 8 is sent in the cooling room 4 and lowers the temperature, after cooling finishes, the vacuum tightness of cooling room 4 is with extraneous when identical, vacuum securing device on the cooling room 4 is opened, loading plate 8 is through after lowering the temperature, be sent to by automatic transmission system and unload photovoltaic crystal silicon sheet on the automatic transmission relieving platform 5, automatic transmission system is transported to loading plate 8 on the automatic transmission loading stage 1 automatically after the completion of discharge, the growth of beginning next round overlay film.
The present invention has realized carrying out silicon nitride tectorial membrane under the full-automatic transmission of multi-cavity body, and modular design can be the user and makes expansion silicon nitride tectorial membrane system to measure.
Claims (6)
1. full-automatic large panel PECVD silicon nitride tectorial membrane preparation system, it is characterized in that: comprise automatic transmission loading stage (1), preheating chamber (2), PECVD chamber (3), cooling room (4) and transmit relieving platform (5) automatically, wherein preheating chamber (2), PECVD chamber (3) and cooling room (4) are installed on the stand successively, automatically transmission loading stage (1) links to each other with preheating chamber (2), transmits relieving platform (5) automatically and links to each other with cooling room (4); Preheating chamber (2), PECVD chamber (3) and cooling room (4) are connected with vacuum-pumping system (6) by gas piping (7) respectively.
2. by the described full-automatic large panel PECVD silicon nitride tectorial membrane preparation system of claim 1, it is characterized in that: described preheating chamber (2) can be a plurality of, is connected in series between automatic transmission loading stage (1) and PECVD chamber (3).
3. by the described full-automatic large panel PECVD silicon nitride tectorial membrane preparation system of claim 1, it is characterized in that: described cooling room (4) can be a plurality of, is connected in series between PECVD chamber (3) and the automatic transmission relieving platform (5).
4. by the described full-automatic large panel PECVD silicon nitride tectorial membrane preparation system of claim 1, it is characterized in that: described PECVD chamber (3) can be a plurality of, is connected in series between preheating chamber (2) and the cooling room (4).
5. by the described full-automatic large panel PECVD silicon nitride tectorial membrane preparation system of claim 1, it is characterized in that: described preheating chamber (2), PECVD chamber (3) and cooling room (4) are installed on separately the stand by bolt respectively, connect by bolt between each stand, automatically transmission loading stage (1) is connected by bolt with the stand of carrying preheating chamber (2), transmits relieving platform (5) automatically and is connected by bolt with the stand of carrying cooling room (4).
6. by the described full-automatic large panel PECVD silicon nitride tectorial membrane preparation system of claim 1, it is characterized in that: be equipped with mechanical manipulator on transmission loading stage (1) and the automatic transmission relieving platform (5) automatically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910011028A CN101851748A (en) | 2009-04-03 | 2009-04-03 | Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910011028A CN101851748A (en) | 2009-04-03 | 2009-04-03 | Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101851748A true CN101851748A (en) | 2010-10-06 |
Family
ID=42803422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910011028A Pending CN101851748A (en) | 2009-04-03 | 2009-04-03 | Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101851748A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185010A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Optimized passivation method applied to solar cell |
| CN102789969A (en) * | 2012-08-23 | 2012-11-21 | 英利能源（中国）有限公司 | Method for depositing silicon nitride film, crystalline silicon solar energy battery and manufacturing method of crystalline silicon solar energy battery |
| CN103014678A (en) * | 2011-09-20 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Silicon film plating by using unique transmission mechanism sheet transmission technology |
| CN104630737A (en) * | 2013-11-13 | 2015-05-20 | 中国科学院沈阳科学仪器股份有限公司 | Transmission system used in five-chamber automatic electron beam deposition system |
| CN105887037A (en) * | 2014-09-29 | 2016-08-24 | 浙江经立五金机械有限公司 | Vacuum film coating machine with automatic conveying function |
| CN106637146A (en) * | 2016-12-07 | 2017-05-10 | 中国电子科技集团公司第四十八研究所 | Chain PECVD (plasma enhanced chemical vapor deposition) coating system for PERC (passivated emitter and rear contact) cell |
| CN107086255A (en) * | 2017-06-09 | 2017-08-22 | 常州比太科技有限公司 | Solar cell filming equipment and solar cell chain type production equipment |
| CN107221579A (en) * | 2017-06-09 | 2017-09-29 | 常州比太科技有限公司 | Solar cell film plating process and solar cell |
| CN110408914A (en) * | 2019-08-28 | 2019-11-05 | 理想晶延半导体设备（上海）有限公司 | Tubular type depositing system |
| CN110760821A (en) * | 2019-10-08 | 2020-02-07 | 无锡嘉瑞光伏有限公司 | Bidirectional tubular PECVD system and preparation process thereof |
| CN111304637A (en) * | 2020-03-17 | 2020-06-19 | 常州捷佳创精密机械有限公司 | Coating film production equipment |
| CN111304637B (en) * | 2020-03-17 | 2024-04-12 | 常州捷佳创精密机械有限公司 | Coating production equipment |
-
2009
- 2009-04-03 CN CN200910011028A patent/CN101851748A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185010A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Optimized passivation method applied to solar cell |
| CN103014678A (en) * | 2011-09-20 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Silicon film plating by using unique transmission mechanism sheet transmission technology |
| CN102789969A (en) * | 2012-08-23 | 2012-11-21 | 英利能源（中国）有限公司 | Method for depositing silicon nitride film, crystalline silicon solar energy battery and manufacturing method of crystalline silicon solar energy battery |
| CN104630737A (en) * | 2013-11-13 | 2015-05-20 | 中国科学院沈阳科学仪器股份有限公司 | Transmission system used in five-chamber automatic electron beam deposition system |
| CN105887037A (en) * | 2014-09-29 | 2016-08-24 | 浙江经立五金机械有限公司 | Vacuum film coating machine with automatic conveying function |
| CN106637146A (en) * | 2016-12-07 | 2017-05-10 | 中国电子科技集团公司第四十八研究所 | Chain PECVD (plasma enhanced chemical vapor deposition) coating system for PERC (passivated emitter and rear contact) cell |
| CN107086255A (en) * | 2017-06-09 | 2017-08-22 | 常州比太科技有限公司 | Solar cell filming equipment and solar cell chain type production equipment |
| CN107221579A (en) * | 2017-06-09 | 2017-09-29 | 常州比太科技有限公司 | Solar cell film plating process and solar cell |
| CN107086255B (en) * | 2017-06-09 | 2019-09-13 | 常州比太科技有限公司 | Solar battery filming equipment and solar battery chain type production equipment |
| CN110408914A (en) * | 2019-08-28 | 2019-11-05 | 理想晶延半导体设备（上海）有限公司 | Tubular type depositing system |
| CN110408914B (en) * | 2019-08-28 | 2021-07-20 | 理想晶延半导体设备(上海)股份有限公司 | Tubular deposition system |
| CN110760821A (en) * | 2019-10-08 | 2020-02-07 | 无锡嘉瑞光伏有限公司 | Bidirectional tubular PECVD system and preparation process thereof |
| CN111304637A (en) * | 2020-03-17 | 2020-06-19 | 常州捷佳创精密机械有限公司 | Coating film production equipment |
| CN111304637B (en) * | 2020-03-17 | 2024-04-12 | 常州捷佳创精密机械有限公司 | Coating production equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101851748A (en) | Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system | |
| CN201309965Y (en) | Full-automatic large plate PECVD crystal silicon photovoltaic anti-reflection film preparation device | |
| CN201386135Y (en) | Full-automatic large flat PECVD silicon nitride membrane preparation system | |
| CN102220567A (en) | Flat PECVD (plasma-enhanced chemical vapor deposition) silicon nitride coating system | |
| US20060096536A1 (en) | Pressure control system in a photovoltaic substrate deposition apparatus | |
| CN208917302U (en) | Solar cell manufactures vertical HWCVD-PVD integration apparatus | |
| CN102180447B (en) | System and process for recovery of cadmium telluride (CdTe) | |
| CN104795463A (en) | PECVD device for producing heterojunction solar cells and working method of device | |
| CN101958371A (en) | Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells | |
| CN105986251A (en) | PECVD system | |
| CN210489583U (en) | Semiconductor manufacturing machine platform | |
| CN201655831U (en) | Flat-plate PECVD silicon nitride laminating system | |
| CN201678731U (en) | System of flat PECVD silicon nitride film | |
| CN101748392B (en) | Fully-automatic large-scale flat-plate type PECVD crystal silicon photovoltaic anti-reflection film preparation device | |
| CN201648518U (en) | Plate PECVD silicon nitride covering film system | |
| CN102296285A (en) | Linear array type organic metal compound vapor deposition system and method | |
| CN102842637A (en) | Substrate treatment device and substrate treatment method | |
| CN108091722B (en) | Automatic feeding and discharging and automatic sheet turning system and working method thereof | |
| CN102277562B (en) | Multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for thin-film solar batteries | |
| CN212476523U (en) | Thin-film solar cell toughening furnace | |
| CN206408291U (en) | A kind of former of calcium titanium ore bed film and its application | |
| CN111662004B (en) | Thin film solar cell toughening furnace and toughening method | |
| CN202626288U (en) | Plasma enhanced chemical vapor deposition (PECVD) system configuration for heterojunction solar cell | |
| WO2007101207A3 (en) | Process chambers for substrate vacuum processing tool | |
| CN204570028U (en) | Vacuum coating film equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20101006 |