CN210489583U - Semiconductor manufacturing machine platform - Google Patents
Semiconductor manufacturing machine platform Download PDFInfo
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- CN210489583U CN210489583U CN201921735955.6U CN201921735955U CN210489583U CN 210489583 U CN210489583 U CN 210489583U CN 201921735955 U CN201921735955 U CN 201921735955U CN 210489583 U CN210489583 U CN 210489583U
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Abstract
The utility model discloses a semiconductor manufacturing board relates to semiconductor technology field, include: a transfer chamber; a transfer chamber in isolatable communication with the conversion chamber; a reaction chamber in isolatable communication with the transfer chamber; the air inlets of the plurality of vacuum pumps are respectively and selectively connected with the conversion chamber and the reaction chamber through pipelines; an exhaust gas treatment device; the beneficial effects of the above technical scheme are that: when the vacuum pump corresponding to a certain reaction chamber is abnormally shut down, the valve pipelines in the communication units are switched, the vacuum pumps of other chambers are temporarily used for pumping away residual reaction gas in the reaction chamber, and certain vacuum degree in the chamber is maintained, so that the problems that in the prior art, the reaction gas cannot be pumped away in time and wafers cannot be transmitted out in time due to the abnormal shut down of the vacuum pump, and the risk of wafer scrapping is increased are solved.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a semiconductor manufacturing board.
Background
The semiconductor film Deposition technology comprises chemical Vapor Deposition and Physical Vapor Deposition, wherein Physical Vapor Deposition (PVD) is a technology for transferring substances by using a certain Physical process, namely transferring atoms or molecules onto the outer surface of a substrate (silicon) and depositing the atoms or the molecules into a film, and the Physical Vapor Deposition can be divided into evaporation (evaporation) and sputtering (sputtering) according to the formation principle of a metal coating, but the Physical Vapor Deposition needs to be carried out in a certain vacuum environment by any coating method; chemical Vapor Deposition (CVD) is a Chemical technology, which mainly uses one or more gaseous compounds or simple substances containing film elements to perform a Chemical reaction on the surface of a substrate to form a film, and is usually performed under a certain vacuum condition, i.e., negative pressure deposition, wherein the quality of the film deposited under the negative pressure condition is generally better than that deposited under the normal pressure.
Therefore, no matter chemical vapor deposition or physical vapor deposition, the manufacturing machine table needs to keep a certain vacuum degree, in the existing chemical vapor manufacturing machine table, the vacuum pumps connected with all reaction chambers are independently controlled, when the vacuum pump corresponding to a certain reaction chamber is abnormally stopped, the vacuum degree in the chamber cannot be maintained, at the moment, because the internal and external air pressure difference of the chamber is very large, the wafer in the reaction chamber cannot be timely conveyed out of a high-temperature area, and the abnormal stop of the vacuum pump simultaneously enables the reaction gas in the reaction chamber not to be timely pumped away, the residual reaction gas can react with the deposited metal, the metal is caused to generate crystalline phase abnormality, and the wafer is scrapped. In addition, abnormal shutdown of the vacuum pump may cause the reaction chamber to be in an abnormal idle state under a high temperature condition for a long time, further increasing risks of stress failure and poor and standard exceeding of the wafer surface, and the chemical vapor deposition reaction chamber generally has a plurality of wafer positions, so that one abnormal shutdown of the vacuum pump may often cause scrapping of a plurality of wafers.
SUMMERY OF THE UTILITY MODEL
According to the problems in the prior art, a buffer chamber and a communication unit are added on the basis of the existing machine, so that when a vacuum pump corresponding to a certain reaction chamber is abnormally stopped, a valve pipeline in the communication unit is switched, the residual reaction gas in the reaction chamber is temporarily pumped away by the vacuum pump of another chamber, a certain vacuum degree in the chamber is maintained, and meanwhile, after the vacuum degree in the chamber reaches a preset condition, the wafer in the chamber is recovered to the buffer chamber for storage, so that the problem that in the prior art, the reaction gas cannot be pumped away in time and the wafer cannot be timely transferred out due to abnormal stop of the vacuum pump, and the risk of wafer scrapping is increased is solved.
The technical scheme specifically comprises the following steps:
a semiconductor manufacturing tool for metal deposition on a wafer, comprising:
a transfer chamber;
a transfer chamber in isolatable communication with the conversion chamber;
a reaction chamber in isolatable communication with the transfer chamber; the air inlets of the plurality of vacuum pumps are respectively and selectively connected with the conversion chamber and the reaction chamber through pipelines;
preferably, wherein the semiconductor manufacturing machine further comprises: and the waste gas treatment device is connected with the exhaust ports of the plurality of vacuum pumps through pipelines.
Preferably, wherein the reaction chamber comprises a first reaction chamber and a second reaction chamber.
Preferably, the plurality of vacuum pumps specifically include:
the first vacuum pump is connected with the first reaction chamber through a first pipeline and is respectively connected with the second reaction chamber and the conversion chamber through a communication unit;
the second vacuum pump is connected with the second reaction chamber through a second pipeline and is respectively connected with the first reaction chamber and the conversion chamber through the communication unit;
and the third vacuum pump is connected with the first conversion chamber through a third pipeline and is respectively connected with the first reaction chamber and the first reaction chamber through the communication unit.
Preferably, wherein the communication unit comprises:
the first three-way valve is arranged on the first pipeline;
the second three-way valve is arranged on the second pipeline;
the third three-way valve is arranged on the third pipeline;
a fourth pipeline connecting the second three-way valve and the third three-way valve;
the fourth three-way valve is arranged on the fourth pipeline and is connected with the first three-way valve through a fifth pipeline.
Preferably, the device further comprises a buffer chamber, wherein the buffer chamber is communicated with the conveying chamber.
Preferably, the buffer chamber is a plurality of chambers arranged on the side wall of the transfer chamber.
Preferably, the vacuum transfer device further comprises a fourth vacuum pump, and an air inlet of the fourth vacuum pump is respectively connected with the transfer chamber and the buffer chamber through pipelines.
Preferably, the vacuum pump further comprises a sixth pipeline, and the fourth vacuum pump is connected with the conveying chamber through the sixth pipeline.
Preferably, the buffer device further comprises a seventh pipeline, one end of the seventh pipeline is connected with the buffer chamber, and the other end of the seventh pipeline is connected to the sixth pipeline through a confluence valve.
Preferably, wherein the exhaust gas treatment device is an exhaust gas combustion device.
Preferably, the semiconductor fabrication tool further comprises an atmospheric transfer chamber in isolatable communication with the conversion chamber.
The beneficial effects of the above technical scheme are that:
the utility model provides a semiconductor manufacturing machine, this manufacturing machine is through increasing a buffer chamber and a communicating unit on the basis of current board for when the vacuum pump that a certain reaction chamber corresponds appears the abnormal shut down, through switching the valve pipeline among the communicating unit, borrow the residual reaction gas in this reaction chamber temporarily by the vacuum pump of other cavity, and maintain certain vacuum in the chamber, reach the predetermined condition after when the vacuum in the chamber, retrieve the wafer in this chamber and preserve in the buffer chamber, solved among the prior art, because of the abnormal shut down of vacuum pump lead to the reaction gas can not in time be taken away and the wafer can not in time be spread and increase the problem of wafer scrapping risk.
Drawings
FIG. 1 is a schematic diagram of a chamber configuration of an embodiment of a semiconductor fabrication tool;
FIG. 2 is a schematic diagram of a piping structure of an embodiment of a semiconductor fabrication tool.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention will be further described with reference to the accompanying drawings and specific embodiments, but the present invention is not limited thereto.
A semiconductor fabrication tool, as shown in fig. 1, comprising:
a conversion chamber 1;
the transfer chamber 2 is communicated with the conversion chamber 1 in an isolatable way and is used for transferring the wafer of the conversion chamber 1 to the corresponding reaction chamber 3;
the reaction chamber 3 is communicated with the conveying chamber 2 in an isolatable way and is used for the deposition reaction of the wafer; the air inlets of the vacuum pumps 5 are respectively and selectively connected with the conversion chamber 1 and the reaction chamber 3 through pipelines, and the vacuum pumps 5 are used for maintaining the vacuum degrees in the conversion chamber 1, the transmission chamber 2 and the reaction chamber 3;
and an exhaust gas treatment device 6 connected to the exhaust ports of the plurality of vacuum pumps 5 through pipes for treating the exhaust gas discharged from the vacuum pumps 5.
The conversion chamber 1 facilitates conversion of the wafer between a normal pressure environment and a vacuum environment.
The utility model discloses a specific embodiment, each vacuum pump in a plurality of vacuum pumps 5 of semiconductor manufacturing board is all mutually independent, including independent operation and independent control, and every independent vacuum pump in vacuum pump 5 all can be selectively through the arbitrary one cavity in conversion intercommunication conversion cavity 1 and the reaction chamber 3 of pipeline to guarantee when a certain pump is because the unable operation of trouble, other vacuum pumps can replace this trouble vacuum pump work through the conversion of pipeline, continue to maintain the vacuum in conversion cavity 1 and the reaction chamber 3.
In the preferred embodiment of the present invention, as shown in fig. 2, the reaction chamber 3 comprises a first reaction chamber 30 and a second reaction chamber 31.
In the preferred embodiment of the present invention, the plurality of vacuum pumps 5 specifically include:
a first vacuum pump 50 connected to the first reaction chamber 30 through a first pipeline and connected to the second reaction chamber 31 and the conversion chamber 1 through a communication unit 8, respectively;
a second vacuum pump 51 connected to the second reaction chamber 31 through a second pipeline and connected to the first reaction chamber 30 and the conversion chamber 1 through the communication unit 8, respectively;
the third vacuum pump 52 is connected to the conversion chamber 1 through a third pipeline, and is connected to the first reaction chamber 30 and the second reaction chamber 31 through the communication unit 8.
In a specific embodiment of the present invention, the first vacuum pump 50, the second vacuum pump 51 and the third vacuum pump 52 are independently controlled and operated, under the condition that each vacuum pump normally works, the first vacuum pump 50 is used for maintaining the vacuum degree in the first reaction chamber 30, the second vacuum pump 51 is used for maintaining the vacuum degree in the second reaction chamber 31, the third vacuum pump 52 is used for maintaining the vacuum degree in the conversion chamber 1, and under the condition of normal work, the vacuum pumps are not communicated with each other.
In the preferred embodiment of the present invention, the communicating unit 8 includes:
a first three-way valve 80 disposed on the first pipe;
a second three-way valve 81 disposed on the second pipe;
a third three-way valve 82 provided on the third pipe;
a fourth pipe connecting the second three-way valve 81 and the third three-way valve 82;
the fourth three-way valve 83 is disposed on the fourth pipeline and connected to the first three-way valve 80 through a fifth pipeline.
The utility model discloses a specific embodiment, the intercommunication unit 8 is through the pipeline intercommunication between a plurality of three-way valves with a plurality of vacuum pumps 5, makes each vacuum pump in a plurality of vacuum pumps 5 all can communicate with conversion cavity 1, first reaction chamber 30 and second reaction chamber 31 through the direction that switches on that changes the three-way valve to make each vacuum pump all can provide the vacuum degree for any one cavity in conversion cavity 1, first reaction chamber 30 and the second reaction chamber 31 and maintain.
In another embodiment of the present invention, the communication unit 8 is not limited to a three-way valve, and for example, two one-way valves or two-way valves may be used instead of the three-way valve. According to the requirement of pipeline modification, for example, when other pipelines need to be connected, the system can also be composed of a plurality of four-way valves, and each of the plurality of vacuum pumps 5 is directly connected with the conversion chamber 2, the first reaction chamber 30 and the second reaction chamber 31 through the four-way valve and a separate pipeline.
In the case where the reaction chamber has a small number of wafers and the transfer chamber 2 has a sufficient wafer capacity, the wafers may be temporarily stored in the transfer chamber 2 when a pump fails. However, in some cases, the available wafer buffer in the transfer chamber 2 is insufficient, and therefore, in the preferred embodiment of the present invention, the semiconductor manufacturing apparatus further comprises a buffer chamber 9, wherein the buffer chamber 9 is in communication with the transfer chamber 2. In some embodiments, the buffer chamber 9 is a number of chambers disposed on the side wall of the transfer chamber 2.
The utility model discloses an in one embodiment, semiconductor manufacturing machine increases a buffer chamber 9, reaction cabin in the semiconductor manufacturing machine is carrying out metal deposition's in-process, when the vacuum pump breaks down suddenly, need pass through the trend that changes the valve in the intercommunication unit 8 this moment, make other vacuum pumps that can normally work provide the vacuum for this reaction cabin temporarily, after vacuum reaches the predetermined condition, manufacturing machine will not accomplish metal deposition technology wafer in this reaction cabin in time to take out, deposit temporarily in buffer chamber 9, avoid the damage of wafer, wait for after the vacuum pump that this reaction chamber corresponds restores, with this wafer conveying that does not accomplish metal deposition technology get into this reaction chamber, continue to accomplish remaining metal deposition technology.
In another embodiment of the invention, the buffer chamber 9 comprises 10 wafer positions.
In the preferred embodiment of the present invention, the vacuum transfer device further comprises a fourth vacuum pump 7, and an air inlet of the fourth vacuum pump 7 is connected to the transfer chamber 2 and the buffer chamber 9 through pipes, respectively.
In the preferred embodiment of the present invention, a sixth pipeline is further included, and the fourth vacuum pump 7 is connected to the transfer chamber 2 through the sixth pipeline.
In the preferred embodiment of the present invention, the device further comprises a seventh pipeline, one end of the seventh pipeline is connected to the buffer chamber 9, and the other end of the seventh pipeline is connected to the sixth pipeline through a converging valve.
In the preferred embodiment of the present invention, the exhaust gas treatment device 6 is an exhaust gas combustion device.
In the preferred embodiment of the present invention, the semiconductor manufacturing apparatus further comprises an atmospheric transfer chamber 4 in isolatable communication with the conversion chamber 1.
The working principle of the communicating unit 8 is described in detail below in a specific embodiment:
as shown in fig. 2, in the case where the semiconductor manufacturing apparatus is operating normally, the a0 port of the first three-way valve 80 communicates with the B0 port, the a1 port of the second three-way valve 81 communicates with the B1 port, and the a2 port of the third three-way valve 82 communicates with the B2 port. When the first vacuum pump 50 for maintaining the vacuum degree of the first reaction chamber 30 stops working due to a fault, at this time, the first three-way valve 80 is switched to the a0 end to communicate with the C0 end, the third three-way valve 82 is switched to the B2 end to communicate with the C2 end, and the fourth three-way valve 83 is switched to the A3 end to communicate with the B3 end, so that the third vacuum pump 52 can provide the vacuum degree maintaining function for the first reaction chamber 30 at this time, when the vacuum degree in the first reaction chamber 30 reaches a predetermined condition, the semiconductor manufacturing machine transfers the wafer which is not deposited in the first reaction chamber 30 to the buffer chamber 9 for temporary storage, and after the first vacuum pump 50 is repaired, the wafer stored in the buffer chamber 9 is continuously transferred to the first reaction chamber 30 for a subsequent metal deposition process.
In another embodiment of the present invention, a three-way valve D is further disposed on the connection pipeline between the third vacuum pump 52 and the exhaust gas treatment device 6, under normal operation, the end D1 of the three-way valve D is communicated with the end D2, the exhaust gas sucked from the conversion chamber is directly discharged to the discharge end, when the first vacuum pump 50 or the second vacuum pump 51 is out of order, the third vacuum pump is used for maintaining the vacuum degree in the first reaction chamber and/or the second reaction chamber when coming through the change of the communication unit 8, because the gas in the reaction chamber is harmful gas, the three-way valve D needs to be changed into the end D1 and the end D3 for communication, so that the exhaust gas pumped from the third vacuum pump 52 is discharged to the discharge end after being treated by the exhaust gas treatment device 6.
The beneficial effects of the above technical scheme are that:
the utility model provides a semiconductor manufacturing machine, this manufacturing machine is through increasing a buffer chamber and a communicating unit on the basis of current board for when the vacuum pump that a certain reaction chamber corresponds appears the abnormal shut down, through switching the valve pipeline among the communicating unit, borrow the residual reaction gas in this reaction chamber temporarily by the vacuum pump of other cavity, and maintain certain vacuum in the chamber, reach the predetermined condition after when the vacuum in the chamber, retrieve the wafer in this chamber and preserve in the buffer chamber, solved among the prior art, because of the abnormal shut down of vacuum pump lead to the reaction gas can not in time be taken away and the wafer can not in time be spread and increase the problem of wafer scrapping risk.
The above description is only an example of the preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and those skilled in the art should be able to realize the equivalent alternatives and obvious variations of the present invention.
Claims (11)
1. A semiconductor manufacturing tool, comprising:
a transfer chamber;
a transfer chamber in isolatable communication with the conversion chamber;
a reaction chamber in isolatable communication with the transfer chamber; and the air inlets of the plurality of vacuum pumps are respectively and selectively connected with the conversion chamber and the reaction chamber through pipelines.
2. The semiconductor manufacturing tool of claim 1, further comprising:
and the waste gas treatment device is connected with the exhaust ports of the plurality of vacuum pumps through pipelines.
3. The semiconductor manufacturing tool of claim 1, wherein the reaction chamber comprises a first reaction chamber and a second reaction chamber.
4. The semiconductor manufacturing tool of claim 3, wherein the plurality of vacuum pumps comprises:
the first vacuum pump is connected with the first reaction chamber through a first pipeline and is respectively connected with the second reaction chamber and the conversion chamber through a communication unit;
the second vacuum pump is connected with the second reaction chamber through a second pipeline and is respectively connected with the first reaction chamber and the conversion chamber through the communication unit;
and the third vacuum pump is connected with the conversion chamber through a third pipeline and is respectively connected with the first reaction chamber and the second reaction chamber through the communication unit.
5. The semiconductor manufacturing tool of claim 4, wherein the communication unit comprises:
the first three-way valve is arranged on the first pipeline;
the second three-way valve is arranged on the second pipeline;
the third three-way valve is arranged on the third pipeline;
a fourth pipeline connecting the second three-way valve and the third three-way valve;
the fourth three-way valve is arranged on the fourth pipeline and is connected with the first three-way valve through a fifth pipeline.
6. The semiconductor manufacturing tool of claim 1, further comprising at least one buffer chamber in communication with the transfer chamber.
7. The semiconductor manufacturing tool of claim 6, wherein the buffer chamber is a plurality of chambers disposed on a sidewall of the transfer chamber.
8. The semiconductor manufacturing tool of claim 6, further comprising a fourth vacuum pump having an inlet connected to the transfer chamber and the buffer chamber via a pipe, respectively.
9. The semiconductor manufacturing tool of claim 8, further comprising a sixth conduit, the fourth vacuum pump being coupled to the transfer chamber through the sixth conduit.
10. The semiconductor manufacturing machine as claimed in claim 9, further comprising a seventh pipe, wherein one end of the seventh pipe is connected to the buffer chamber, and the other end of the seventh pipe is connected to the sixth pipe through a flow-merging valve.
11. The semiconductor manufacturing tool of claim 1, further comprising an atmospheric transfer chamber in isolatable communication with the conversion chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921735955.6U CN210489583U (en) | 2019-10-16 | 2019-10-16 | Semiconductor manufacturing machine platform |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921735955.6U CN210489583U (en) | 2019-10-16 | 2019-10-16 | Semiconductor manufacturing machine platform |
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| CN210489583U true CN210489583U (en) | 2020-05-08 |
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| CN201921735955.6U Active CN210489583U (en) | 2019-10-16 | 2019-10-16 | Semiconductor manufacturing machine platform |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908902A (en) * | 2021-02-10 | 2021-06-04 | 长江存储科技有限责任公司 | Semiconductor device processing apparatus and processing method |
| CN115216749A (en) * | 2021-04-16 | 2022-10-21 | 上海新微技术研发中心有限公司 | Substrate processing system and control method thereof |
| WO2023123567A1 (en) * | 2021-12-28 | 2023-07-06 | 江苏第三代半导体研究院有限公司 | Semiconductor processing system and semiconductor processing method |
-
2019
- 2019-10-16 CN CN201921735955.6U patent/CN210489583U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908902A (en) * | 2021-02-10 | 2021-06-04 | 长江存储科技有限责任公司 | Semiconductor device processing apparatus and processing method |
| CN112908902B (en) * | 2021-02-10 | 2024-04-09 | 长江存储科技有限责任公司 | Semiconductor device processing apparatus and processing method |
| CN115216749A (en) * | 2021-04-16 | 2022-10-21 | 上海新微技术研发中心有限公司 | Substrate processing system and control method thereof |
| WO2023123567A1 (en) * | 2021-12-28 | 2023-07-06 | 江苏第三代半导体研究院有限公司 | Semiconductor processing system and semiconductor processing method |
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