CN102185010A - Optimized passivation method applied to solar cell - Google Patents
Optimized passivation method applied to solar cell Download PDFInfo
- Publication number
- CN102185010A CN102185010A CN2010105703471A CN201010570347A CN102185010A CN 102185010 A CN102185010 A CN 102185010A CN 2010105703471 A CN2010105703471 A CN 2010105703471A CN 201010570347 A CN201010570347 A CN 201010570347A CN 102185010 A CN102185010 A CN 102185010A
- Authority
- CN
- China
- Prior art keywords
- graphite frame
- ammonia
- solar cell
- cavity
- optimization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The embodiment of the invention discloses an optimized passivation method applied to a solar cell. The method comprises the following steps of: preheating a graphite frame into which a silicon wafer is inserted; feeding the preheated graphite frame into a technological chamber, and introducing ammonia only into the technological chamber; introducing the ammonia and silane into the technological chamber simultaneously; feeding the graphite frame into a cooling chamber and cooling; and taking the graphite frame out from the cooling chamber, and unloading. In the optimized passivation method, the ammonia is pre-deposited before a deposition step of the conventional technology, so that the ammonia can well cover a sample; therefore, the body passivation function of H can be fully exerted, and the conversion efficiency of the solar cell is further improved.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, relate to a kind of optimization passivating method that is applied to solar cell.
Background technology
Solar cell also claims photovoltaic cell, is the semiconductor device that a kind of luminous energy with the sun is converted into electric energy.Because it is a Green Product, can cause environmental pollution, and be renewable resource, so under current energy starved situation, solar cell is a kind of novel energy that arranged wide development prospect.
The manufacturing technology of present crystal silicon solar energy battery has been mature on the whole stable, and typical process flow may further comprise the steps as shown in Figure 1:
S1, chemical cleaning surface structuration are handled: the mechanical damage layer of removing silicon chip surface, making originally by chemical reaction, the silicon chip surface of light forms rough structure, with the absorption of increase light, and remove surperficial sodium metasilicate, oxide, greasy dirt and impurity metal ion;
S2, diffusion: P type silicon chip becomes the N type in the diffusion rear surface, form PN junction, make silicon chip have photovoltaic effect, the mode of diffusion can be any one in the chain type diffusion behind chain type diffusion and the silk screen printing phosphorus slurry behind phosphorus oxychloride (POCl3) liquid source diffusion, the spraying phosphate aqueous solution;
S3, peripheral etching: form conductive layer at silicon chip edge when removing diffusion, prevent that it is with PN junction two terminal shortcircuits;
S4, PECVD (plasma enhanced chemical vapor deposition, plasma reinforced chemical vapour deposition) promptly deposit antireflective coating, are used for antireflective and passivation;
S5, print electrode: front side silver paste, back field aluminum paste mainly are to be collected current and electric action;
S6, sintering: at high temperature make between the circuit of printing and the silicon chip and form alloy.
Above-mentioned PECVD know-why is to utilize low temperature plasma to make energy source, sample places on the negative electrode of glow discharge under the low pressure, utilize glow discharge (perhaps other heater) to make sample be warmed up to predetermined temperature, feed an amount of reacting gas then, after gas process series of chemical and the plasma reaction, form solid film at sample surfaces.In the present manufacture of solar cells, generally with NH
3And SiH
4Be reacting gas, form the navy blue SiNx:H film of one deck after the reaction, SiNx wherein (being silicon nitride) plays the antireflective effect, and H (being hydrogen) can play the effect of body passivation.Basic process may further comprise the steps as shown in Figure 2:
A, silicon chip is inserted on the graphite frame at loading stage;
B, the graphite frame is sent into preheating cavity, carry out preheating;
C, graphite frame enter process cavity, carry out deposit, and process cavity feeds NH simultaneously
3And SiH
4
D, graphite frame enter cooling chamber and cool off;
E, graphite frame are come out of the stove, and carry out unloading piece at the unloading piece platform.
In implementing the invention process, the inventor finds, existing P ECVD technology is with NH
3And SiH
4Feed simultaneously, owing to have two kinds of gases, NH simultaneously
3Be difficult to cover sample fully, influence the body passivation effect, thereby influence the electrical property of crystal silicon solar energy battery.
Summary of the invention
In view of this, the invention provides a kind of optimization passivating method that is applied to solar cell,, improve the transfer ratio of solar battery sheet with the intensive aspect passivation.
For achieving the above object, the invention provides following technical scheme:
A kind of optimization passivating method that is applied to solar cell comprises:
The graphite frame that is inserted with silicon chip is preheated;
To carry out pre-warmed graphite frame and enter process cavity, process cavity only feeds ammonia;
Feed ammonia and silane simultaneously toward described process cavity;
The graphite frame advances cooling chamber and cools off;
The graphite frame is gone out unloading piece from cooling chamber.
Preferably, in the said method, it is to carry out under the situation of logical ammonia only that the graphite frame that is inserted with silicon chip is preheated.
Preferably, in the said method, diffusingsurface is down in described graphite frame for described silicon chip.
Preferably, in the said method, the graphite frame is preheated according to following steps:
Preheating cavity is heated;
Detect the temperature in the preheating cavity, when temperature reaches preset value, put described graphite frame into described preheating cavity.
From technique scheme as can be seen, the optimization passivating method that the embodiment of the invention provides, before the deposition step of common process, carry out the pre-deposition of ammonia, make ammonia can cover sample well, thereby can give full play to the body deactivation function of H, and then improve the conversion efficiency of solar cell.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the manufacture method flow chart of prior art crystal silicon solar energy battery;
Fig. 2 carries out the panel PECVD schematic diagram for prior art;
Fig. 3 is a kind of flow chart that is applied to the optimization passivating method of solar cell that the embodiment of the invention provided;
Fig. 4 is that the graphite frame enters the schematic diagram that preheating cavity carries out preheating in implementing flowchart process shown in Figure 3;
Fig. 5 is that the graphite frame enters the schematic diagram that process cavity is carried out deposit in implementing flowchart process shown in Figure 3;
Fig. 6 is that the graphite frame enters the schematic diagram that cooling chamber cools off in implementing flowchart process shown in Figure 3;
Fig. 7 is in implementing flowchart process shown in Figure 3, enters the schematic diagram that the unloading piece platform carries out unloading piece after the graphite frame is cooled off.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Existing passivation technology directly advances process cavity and carries out deposit (also can be called deposition) after the preheating of graphite frame, feeds ammonia and SiH in the process cavity
4Owing to feed two kinds of gases simultaneously, ammonia is difficult to cover sample fully, influences the body passivation effect, thereby influences the electrical property of crystal silicon solar energy battery.For this reason, this paper has proposed a solution, and basic thought is: only fed ammonia in advance before deposition, can cover sample surfaces fully with the assurance ammonia, thereby can give full play to the body deactivation function of H.
Describe below by several embodiment:
Embodiment one
Please refer to Fig. 3, Fig. 4, Fig. 5, Fig. 6 and Fig. 7, wherein, a kind of flow chart that is applied to the optimization passivating method of solar cell that Fig. 3 provides for present embodiment, Fig. 4 enters the schematic diagram that preheating cavity carries out preheating for the graphite frame, Fig. 5 enters the schematic diagram that process cavity is carried out deposit for the graphite frame, Fig. 6 enters the schematic diagram that cooling chamber cools off for the graphite frame, and Fig. 7 enters the schematic diagram that the unloading piece platform carries out unloading piece after the graphite frame is cooled off, and flow process may further comprise the steps as shown in Figure 3:
Step S31, graphite frame stick with silicon chip;
At first, affirmation equipment is in automatic running status, and all are ready;
Secondly, on the graphite frame, stick with silicon chip;
Step S32, the graphite frame is advanced preheating cavity preheat;
Step S33, will carry out pre-warmed graphite frame and enter process cavity, process cavity only feeds ammonia.
To send process cavity to through pre-warmed graphite frame, and only feed ammonia (first via silane is in closed condition), as shown in Figure 4;
Step S34, past described process cavity feed ammonia and silane simultaneously, as shown in Figure 5, carry out deposit;
Step S35, taking-up graphite frame are put cooling chamber into and are cooled off, as shown in Figure 6;
Step S36, the graphite frame is taken out from described cooling chamber, unloading piece, as shown in Figure 7.
The embodiment of the invention was carried out pre-deposited before carrying out deposit, only feed ammonia, so that ammonia can fully cover sample surfaces, can give full play to the body deactivation function of H, improved the conversion efficiency of solar battery sheet.
Preferably, when present embodiment is plugged silicon chip on the graphite frame, down with diffusingsurface.
The effect of the embodiment of the invention is described with concrete experimental data below.
Adopt 20 identical silicon chips as raw material: P type 125 monocrystalline silicon pieces, resistivity 0.5-3 Ω .cm, after conventional clear, surface microstructureization, diffusion, picked at random wherein 10 carry out the panel PECVD step with technology of the present invention, to be left 10 and carry out the panel PECVD step, and all adopt same process to finish follow-up work afterwards according to common process.
Table 1 and table 2 illustrate the electrical property result according to detected solar cell after common process and the technology of the present invention respectively.
Table 1
Table 2
Battery built-in testing data can be seen in contrast table 1 and the table 2, the electrical property that adopts technology of the present invention to carry out the battery sheet of panel PECVD is significantly improved, wherein short circuit current Isc improves 0.075A, thereby transfer ratio Ncell improves 0.158%, and technology of the present invention has played passivation effect preferably.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (3)
1. an optimization passivating method that is applied to solar cell is characterized in that, comprising:
The graphite frame that is inserted with silicon chip is preheated;
To carry out pre-warmed graphite frame and enter process cavity, process cavity only feeds ammonia;
Feed ammonia and silane simultaneously toward described process cavity;
The graphite frame advances cooling chamber and cools off;
The graphite frame is gone out unloading piece from cooling chamber.
2. optimization passivating method according to claim 1 is characterized in that, diffusingsurface is down in described graphite frame for described silicon chip.
3. according to claim 1,2 described optimization passivating methods, it is characterized in that, the graphite frame preheated according to following steps:
Preheating cavity is heated;
Detect the temperature in the preheating cavity, when temperature reaches preset value, put described graphite frame into described preheating cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105703471A CN102185010A (en) | 2010-12-02 | 2010-12-02 | Optimized passivation method applied to solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105703471A CN102185010A (en) | 2010-12-02 | 2010-12-02 | Optimized passivation method applied to solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102185010A true CN102185010A (en) | 2011-09-14 |
Family
ID=44571145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105703471A Pending CN102185010A (en) | 2010-12-02 | 2010-12-02 | Optimized passivation method applied to solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102185010A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183149A (en) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | A kind of production method of solar battery sheet |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
| CN101431122A (en) * | 2008-12-05 | 2009-05-13 | 何旭梅 | Production technology for anti-reflection film of solar cell |
| CN101667602A (en) * | 2009-09-23 | 2010-03-10 | 中轻太阳能电池有限责任公司 | Polysilicon solar cell and preparation method thereof |
| CN201495284U (en) * | 2009-08-03 | 2010-06-02 | 苏州阿特斯阳光电力科技有限公司 | Support hook for coating of silicon wafer |
| CN101834225A (en) * | 2010-04-14 | 2010-09-15 | 湖南红太阳新能源科技有限公司 | Preparation method of silicon nitride films of various colors of crystalline silicon solar cell |
| CN101851748A (en) * | 2009-04-03 | 2010-10-06 | 中国科学院沈阳科学仪器研制中心有限公司 | Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system |
-
2010
- 2010-12-02 CN CN2010105703471A patent/CN102185010A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
| CN101431122A (en) * | 2008-12-05 | 2009-05-13 | 何旭梅 | Production technology for anti-reflection film of solar cell |
| CN101851748A (en) * | 2009-04-03 | 2010-10-06 | 中国科学院沈阳科学仪器研制中心有限公司 | Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system |
| CN201495284U (en) * | 2009-08-03 | 2010-06-02 | 苏州阿特斯阳光电力科技有限公司 | Support hook for coating of silicon wafer |
| CN101667602A (en) * | 2009-09-23 | 2010-03-10 | 中轻太阳能电池有限责任公司 | Polysilicon solar cell and preparation method thereof |
| CN101834225A (en) * | 2010-04-14 | 2010-09-15 | 湖南红太阳新能源科技有限公司 | Preparation method of silicon nitride films of various colors of crystalline silicon solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183149A (en) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | A kind of production method of solar battery sheet |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101777603B (en) | Method for manufacturing back contact solar energy batteries | |
| WO2018157492A1 (en) | Preparation method for p-type perc solar cell, p-type perc solar cell, cell assembly, and cell system | |
| US8178778B2 (en) | Photovoltaic conversion element and manufacturing method therefor, and photovoltaic conversion module using same | |
| WO2023178918A1 (en) | Low-cost contact-passivation all-back electrode solar cell and preparation method therefor | |
| EP2782146B1 (en) | Method for manufacturing a solar cell with reduced potential induced degradation | |
| CN103247715B (en) | Solar cell and its manufacture method | |
| CN103026494A (en) | Silicon solar cell having boron diffusion layer and method for manufacturing same | |
| JP2011129867A (en) | Silicon solar cell containing boron diffusion layer and method of manufacturing the same | |
| CN103022265B (en) | Solar battery sheet and method of diffusion thereof | |
| CN106972079A (en) | The cleaning method at the PERC silicon chip of solar cell back side | |
| TWI390755B (en) | Method of fabricating solar cells | |
| CN102569502A (en) | Wet method etching process | |
| CN103346212A (en) | Phosphorus diffusion method, P-type battery preparation method and N-type battery preparation method | |
| US9559221B2 (en) | Solar cell production method, and solar cell produced by same production method | |
| JP2005353851A (en) | Solar cell module | |
| CN102487100A (en) | Diffusion method used for solar cell | |
| CN104009119A (en) | Method for manufacturing P type crystalline silicon grooved buried-contact battery | |
| CN102024869B (en) | Method for manufacturing solar cell | |
| CN102185010A (en) | Optimized passivation method applied to solar cell | |
| US20120064659A1 (en) | Method for manufacturing solar cell | |
| CN101840955B (en) | Preparation method of crystalline silicon solar cell based on silicon quantum dot superlattice structure | |
| CN109041583B (en) | Solar cell element and solar cell module | |
| Terry et al. | All screen-printed 18% homogeneous emitter solar cells using high volume manufacturing equipment | |
| CN102903786A (en) | Novel ultra-shallow junction crystalline silicon solar cell | |
| CN210073868U (en) | PERC solar cell with selectively enhanced front passivation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110914 |