CN101834225A - Preparation method of silicon nitride films of various colors of crystalline silicon solar cell - Google Patents
Preparation method of silicon nitride films of various colors of crystalline silicon solar cell Download PDFInfo
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- CN101834225A CN101834225A CN201010146391A CN201010146391A CN101834225A CN 101834225 A CN101834225 A CN 101834225A CN 201010146391 A CN201010146391 A CN 201010146391A CN 201010146391 A CN201010146391 A CN 201010146391A CN 101834225 A CN101834225 A CN 101834225A
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Abstract
The invention discloses a production method for realizing silicon nitride films of various colors of a crystalline silicon solar cell. The method uses common tubular PECVD equipment, adjusts SiH4/NH3 flow ratio under established substrate temperature and radio frequency power, controls radio frequency discharge frequency, controls reaction chamber pressure intensity and deposition time and evenly deposits the silicon nitride film of various colors on the silicon slice. The method is simple, is easy to realize, has no pollution and is suitable for industrialized production.
Description
Technical field
The present invention relates to a kind of production of crystalline silicon solar batteries method, especially realize the production method of the various color silicon nitride films of crystal silicon solar energy battery.
Background technology
The typical process flow of the crystal silicon solar energy battery that present maturation is commercially produced is: remove the silicon face surface damage, and formation deflection surfaces structure and chemical cleaning → at POCL
3Spread in the atmosphere → remove periphery P N joint → surface passivation and deposit antireflection layer → silk screen printing just, backplate and back of the body surface field → sintering form ohmic contact → test stepping.This technology of commercially producing crystal silicon solar energy battery has the advantages that technology is simple, automation degree of equipment is higher, be easy to large-scale production, thereby can reduce cost, and makes the crystal silicon solar energy battery production that moves towards the industrialization rapidly.Crystal silicon solar energy battery has occupied the share of photovoltaic market more than 90%, and further raising the efficiency, reducing cost is the elementary object of domestic and international crystal silicon solar energy battery research field.In recent years, the laboratory efficient of small size monocrystalline silicon and polycrystal silicon cell has reached 26% and 20% respectively.But the preparation technology of these high-efficiency batteries is too complicated, can't satisfy the requirement of industrialization.Efficient at industrial field, conventional monocrystalline silicon battery is 16%～18%, and the efficient of polycrystal silicon cell is 15～17%.
Illumination is mapped on the silicon chip on plane, and wherein a part is reflected, even to the silicon face of matte, has increased absorption owing to incident light produces repeatedly to reflect, but 10% the reflection loss of also having an appointment.Cover one deck antireflection film layer thereon, can reduce reflection of light greatly.In surface of crystalline silicon passivation deposit antireflective coating technology, characteristics such as silicon nitride film has high-insulativity, chemically stable is good, compactness is good, hardness height.In the crystal silicon solar energy battery manufacture process, the preparation common using plasma chemical gas-phase deposition enhanced of silicon nitride film (PECVD) method, its generation chemical reaction is as follows:
3SiH
4+4NH
3-Si
3N
4+12H
2
Experiment shows, different technical parameters has very big influence to the structure of silicon nitride film, density, refractive index, dielectric constant, chemical stability etc.These parameters comprise deposition temperature, reacting gas ratio, rf frequency and radio-frequency power, reaction environment pressure.In order to improve the quality of produced film, need heat to substrate.Can make film forming after reaching substrate, have certain surface migration ability like this, be attached to substrate in the minimum position of potential energy and get on, make the film internal stress that forms less, compact structure has good inactivating performance.Temperature is less to the influence of deposition rate, but the physico-chemical property influence to silicon nitride film is very big, when temperature raises, the density of film and refractive index straight line rise, can improve the activity and the mobility of substrate surface atom simultaneously, substrate surface reactions is strengthened, and superfluous silicon atom reduces, and the H amount that contains of film reduces.Si/N has improved chemical constituent than descending.Rf frequency and radio-frequency power are the key factors that influences the silicon nitride film growth.Plasma ionization degree is higher under low frequency, and the ion bombardment effect is obvious, and thin film deposition speed is lower; Under the high frequency, ion bombardment effects a little less than.When radio-frequency power hour, gas is fully ionization still, activation efficiency is low, reactant concentration is little, more than the film pin hole and uniformity relatively poor, corrosion resistance is poor; When radio-frequency power increased, the gas activation efficiency improved, and reactant concentration increases, the silicon nitride film compact structure of growth.Radio-frequency power can not be excessive, otherwise deposition rate is too fast, and the uniformity of film is descended, short texture, and pinhold density increases, and inactivating performance is degenerated.SiH
4/ NH
3Flow-rate ratio all has a significant impact the component and the physico-chemical property of deposition rate, film.Work as SiH
4/ NH
3Cross lowly, the silicon nitride film refractive index of deposit is higher, and the stress problem that produces in the growth course is more outstanding, thereby the silicon nitride film of generation is thick more, the easy more generation of the crack performance of film.When ratio was too high, the hydrogen content in the film was just high, had had a strong impact on the reliability of device.Gas pressure intensity is to being deposited with certain influence in the reative cell during the deposit, and when the augmenting response constant pressure was strong, deposition rate increased.The selection of reative cell pressure will guarantee that usually plasma keeps stable glow discharge at the reactor of ad hoc structure.
Existing monocrystalline crystal silicon solar energy battery adopts single coating process usually, and silicon nitride film thickness is in the 70-80 nanometer, and refractive index is about 2.0.The battery of such coating process production presents blueness in the sun, has obviously limited the diversity of solar cell outward appearance.
Summary of the invention
The technical problem to be solved in the present invention is, defective at existing technology existence, propose a kind of preparation method of silicon nitride films of various colors of crystalline silicon solar cell, this method can be prepared the different colours solar cell under the prerequisite that does not influence cell conversion efficiency, and is applicable to industrialization production.
Technical scheme of the present invention is that described preparation method of silicon nitride films of various colors of crystalline silicon solar cell is to adopt conventional plasma enhanced CVD (PECVD) method and equipment, at the silicon chip surface deposition silicon nitride film; Its technical characterictic is that employing resistivity is that the P type silicon chip of 0.2 ohm/cm-30 ohm/cm is done substrate, according to the colorimetric scale of silicon nitride film, under existing underlayer temperature and radio-frequency power, by adjusting SiH
4/ NH
3Flow-rate ratio, control radio frequency discharge frequency, control reative cell pressure, control deposition time, the silicon nitride film of formation different colours.
Below the present invention made further specify.
Described different colours is brown, golden brown, redness, dusty blue, yellow or the blue-green of the colorimetric scale of existing silicon nitride film, or that other can be by in the color of technology realization of the present invention is a kind of.
Among the present invention, before deposition silicon nitride film, silicon chip surface is preferably handled through conventional cleaning, diffusion, etching trimming, removal surface oxide layer.
Further, the method for deposition silicon nitride film of the present invention comprises: with the boiler tube heating (carrying out bulk heat treatmet) that described silicon chip is put into conventional PECVD equipment, and 100 ℃-500 ℃ of substrate heating temperatures, radio-frequency power is adjusted to 1000W-5000W; For preventing that reaction zone downstream reaction gas from reducing deposition rate because of exhausting, adopt bigger gas flow 500mL/min-10000mL/min scope; According to the different requirements of plated film color, SiH
4With NH
3Volume flow ratio 1: 5-15 (SiH
4: NH
3=1: 5-15) adjust in the scope, can extract speed and control pressure in the reative cell at 50Pa-500Pa by adjusting tail gas in course of reaction, control radio frequency discharge frequency be 20KHz-50KHz, deposition time 60 seconds-2000 seconds.
The inventive method is that process is goed deep into theory analysis and test in a large number and repeatedly just obtains, and optimally adjusts SiH by science
4/ NH
3Flow-rate ratio, control radio frequency discharge frequency, control reative cell pressure, control deposition time, realized the uniformity control of silicon nitride film growth, prevented that membrane structure is loose, pinhold density increases, refractive index is controlled in the ideal range, thereby obtains the battery of desired color.
As known from the above, the present invention is a preparation method of silicon nitride films of various colors of crystalline silicon solar cell, this method can be prepared the different colours solar-energy photo-voltaic cell under the prerequisite that does not influence cell conversion efficiency, realized the variation of solar-energy photo-voltaic cell color, and is applicable to industrialization production.
Embodiment
Embodiment 1: selecting resistivity is 0.2 ohm/cm-30 ohm/cm p type single crystal silicon sheet, and crystal face is (100), and technical process is as follows:
(1) silicon chip pre-treatment step:
A. remove the silicon chip surface damage, form deflection surfaces structure and chemical cleaning;
B. at POCL
3Spread in the atmosphere;
C. remove silicon chips periphery PN joint, clean and remove surperficial phosphorosilicate glass;
(2) at crystalline silicon diffusingsurface PECVD method deposition silicon nitride film, the coating process process is:
The non-diffusingsurface of silicon chip is close to graphite boat puts into PECVD equipment boiler tube, boiler tube is heated to uniform temperature, adjust the radio-frequency power of deposit, preheating fed SiH by setting volume flow ratio after 2 minutes
4And NH
3, adjust the evacuating valve aperture, chamber pressure is adjusted to predetermined value, adjust the frequency of radio-frequency power discharge, the control deposition time obtains surface color (silicon nitride film color) and presents brown battery sheet; Wherein:
Boiler tube heating-up temperature (underlayer temperature): 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-3500W
SiH
4With NH
3Volume flow ratio: 1: 5-6 (is SiH
4: NH
3=1: 5-6)
Reative cell pressure: 80Pa-120Pa
The frequency of radio frequency discharge: 30KHz-35KHz
Deposition time: 200 seconds-500 seconds
(3) silk screen printing backplate, oven dry, silk screen printing front electrode, sintering.
Embodiment 2: the silicon nitride film color is the battery sheet depositing technics of golden brown
Boiler tube heating-up temperature (underlayer temperature): 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-3500W
SiH
4With NH
3Volume flow ratio: 1: 5-6 (is SiH
4: NH
3=1: 5-6)
Reative cell pressure: 130Pa-160Pa
The frequency of radio frequency discharge: 30KHz-35KHz
Deposition time: 510 seconds-700 seconds
Other process conditions, method, equipment are equal to embodiment 1.
Embodiment 3: the silicon nitride film color is red battery sheet depositing technics
Boiler tube heating-up temperature (underlayer temperature): 200 ℃-500 ℃
Deposit radio-frequency power: 2000W-3500W
SiH
4With NH
3Volume flow ratio: 1: 6-8 (is SiH
4: NH
3=1: 6-8)
Reative cell pressure: 165Pa-180Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 710 seconds-750 seconds
Embodiment 4: the silicon nitride film color is caeseous battery sheet depositing technics
Boiler tube heating-up temperature (underlayer temperature): 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-5000W
SiH
4With NH
3Volume flow ratio: 1: 6-8 (is SiH
4: NH
3=1: 6-8)
Reative cell pressure: 185Pa-200Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 800 seconds-1000 seconds
Embodiment 5: the silicon nitride film color is yellow battery sheet depositing technics
Boiler tube heating-up temperature (underlayer temperature): 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-5000W
SiH
4With NH
3Volume flow ratio: 1: 5-6 (is SiH
4: NH
3=1: 5-6)
Reative cell pressure: 205Pa-210Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 1200 seconds-1600 seconds
Other process conditions, method, equipment are equal to embodiment 1.
Embodiment 6: the silicon nitride film color is glaucous battery sheet depositing technics
Boiler tube heating-up temperature (underlayer temperature): 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-5000W
SiH
4With NH
3Volume flow ratio: 1: 5-6 (is SiH
4: NH
3=1: 5-6)
Reative cell pressure: 215Pa-250Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 1650 seconds-2000 seconds
Other process conditions, method, equipment are equal to embodiment 1.
Claims (9)
1. preparation method of silicon nitride films of various colors of crystalline silicon solar cell, adopt conventional plasma enhanced CVD (PECVD) method and equipment, at the silicon chip surface deposition silicon nitride film, it is characterized in that, employing resistivity is that the P type silicon chip of 0.2 ohm/cm-30 ohm/cm is done substrate, according to the colorimetric scale of silicon nitride film, under existing underlayer temperature and radio-frequency power, by adjusting SiH
4/ NH
3Flow-rate ratio, control radio frequency discharge frequency, control reative cell pressure, control deposition time, the silicon nitride film of formation different colours.
2. according to the described preparation method of silicon nitride films of various colors of crystalline silicon solar cell of claim 1, it is characterized in that 100 ℃-500 ℃ of substrate heating temperatures, radio-frequency power 1000W-5000W; Gas flow 500mL/min-10000mL/min; SiH
4With NH
3Volume flow ratio be 1: 5-15, reative cell pressure is at 50Pa-500Pa, radio frequency discharge frequency 20KHz-50KHz, deposition time 60 seconds-2000 seconds.
3. according to claim 1 or 2 described preparation method of silicon nitride films of various colors of crystalline silicon solar cell, it is characterized in that the process conditions that generate brown silicon nitride film are:
Boiler tube heating-up temperature: 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-3500W
SiH
4With NH
3Volume flow ratio: 1: 5-6
Reative cell pressure: 80Pa-120Pa
The frequency of radio frequency discharge: 30KHz-35KHz
Deposition time: 200 seconds-500 seconds.
4. according to claim 1 or 2 described preparation method of silicon nitride films of various colors of crystalline silicon solar cell, it is characterized in that the process conditions that generate the golden brown silicon nitride film are:
Boiler tube heating-up temperature: 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-3500W
SiH
4With NH
3Volume flow ratio: 1: 5-6
Reative cell pressure: 130Pa-160Pa
The frequency of radio frequency discharge: 30KHz-35KHz
Deposition time: 510 seconds-700 seconds.
5. according to claim 1 or 2 described preparation method of silicon nitride films of various colors of crystalline silicon solar cell, it is characterized in that the process conditions that generate red silicon nitride film are:
Boiler tube heating-up temperature: 200 ℃-500 ℃
Deposit radio-frequency power: 2000W-3500W
SiH
4With NH
3Volume flow ratio: 1: 6-8
Reative cell pressure: 165Pa-180Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 710 seconds-750 seconds.
6. according to claim 1 or 2 described preparation method of silicon nitride films of various colors of crystalline silicon solar cell, it is characterized in that the process conditions that generate the dusty blue silicon nitride film are:
Boiler tube heating-up temperature: 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-5000W
SiH
4With NH
3Volume flow ratio: 1: 6-8
Reative cell pressure: 185Pa-200Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 800 seconds-1000 seconds.
7. according to claim 1 or 2 described preparation method of silicon nitride films of various colors of crystalline silicon solar cell, it is characterized in that the process conditions that generate yellow silicon nitride film are:
Boiler tube heating-up temperature: 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-5000W
SiH
4With NH
3Volume flow ratio: 1: 5-6
Reative cell pressure: 205Pa-210Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 1200 seconds-1600 seconds.
8. according to claim 1 or 2 described preparation method of silicon nitride films of various colors of crystalline silicon solar cell, it is characterized in that the process conditions that generate the blue-green silicon nitride film are:
Boiler tube heating-up temperature: 200 ℃-400 ℃
Deposit radio-frequency power: 1000W-5000W
SiH
4With NH
3Volume flow ratio: 1: 5-6 (is SiH
4: NH
3=1: 5-9)
Reative cell pressure: 215Pa-250Pa
The frequency of radio frequency discharge: 36KHz-45KHz
Deposition time: 1650 seconds-2000 seconds.
9. according to the described preparation method of silicon nitride films of various colors of crystalline silicon solar cell of claim 1, it is characterized in that, before the silicon chip surface deposition silicon nitride film, silicon chip surface is carried out conventional cleaning, diffusion, etching trimming, removes the surface oxide layer processing.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101982888A (en) * | 2010-09-29 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of colour solar cell |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
| CN102185010A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Optimized passivation method applied to solar cell |
| CN102255000A (en) * | 2011-08-08 | 2011-11-23 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN102790124A (en) * | 2011-05-17 | 2012-11-21 | 南安市三晶阳光电力有限公司 | Manufacturing method of colored solar battery |
| CN102800737A (en) * | 2011-05-23 | 2012-11-28 | 上海神舟新能源发展有限公司 | Method for preparing crystalline silicon solar battery passive film |
| CN102931289A (en) * | 2012-11-28 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | Preparation method of flower piece solar cell |
| CN102969401A (en) * | 2012-12-07 | 2013-03-13 | 润峰电力有限公司 | Production process of efficient crystal silicon solar battery by adopting laser isolation |
| CN104409536A (en) * | 2014-12-08 | 2015-03-11 | 常州天合光能有限公司 | Color photovoltaic module for building interior decoration and preparation method thereof |
| CN104505434A (en) * | 2014-12-16 | 2015-04-08 | 中国电子科技集团公司第四十七研究所 | Photocell and manufacturing method thereof |
| CN106169510A (en) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4122155A (en) * | 1977-01-03 | 1978-10-24 | General Electric Company | Preparation of silicon nitride powder |
| CN101431113A (en) * | 2008-11-24 | 2009-05-13 | 常州天合光能有限公司 | Back-passivated high-efficiency solar cell structure and technique for producing the same |
| CN101613856A (en) * | 2009-07-16 | 2009-12-30 | 中国科学院上海硅酸盐研究所 | A kind of aluminium doped alpha phase silicon nitride (α-Si 3N 4) sill and preparation method thereof |
-
2010
- 2010-04-14 CN CN201010146391XA patent/CN101834225B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4122155A (en) * | 1977-01-03 | 1978-10-24 | General Electric Company | Preparation of silicon nitride powder |
| CN101431113A (en) * | 2008-11-24 | 2009-05-13 | 常州天合光能有限公司 | Back-passivated high-efficiency solar cell structure and technique for producing the same |
| CN101613856A (en) * | 2009-07-16 | 2009-12-30 | 中国科学院上海硅酸盐研究所 | A kind of aluminium doped alpha phase silicon nitride (α-Si 3N 4) sill and preparation method thereof |
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| CN101982888B (en) * | 2010-09-29 | 2012-09-05 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of colour solar cell |
| CN101982888A (en) * | 2010-09-29 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of colour solar cell |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
| CN102185010A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Optimized passivation method applied to solar cell |
| CN102790124B (en) * | 2011-05-17 | 2016-12-14 | 阳光中科（福建）能源股份有限公司 | A kind of manufacture method of colored solar battery |
| CN102790124A (en) * | 2011-05-17 | 2012-11-21 | 南安市三晶阳光电力有限公司 | Manufacturing method of colored solar battery |
| CN102800737A (en) * | 2011-05-23 | 2012-11-28 | 上海神舟新能源发展有限公司 | Method for preparing crystalline silicon solar battery passive film |
| CN102800737B (en) * | 2011-05-23 | 2015-02-25 | 上海神舟新能源发展有限公司 | Method for preparing crystalline silicon solar battery passive film |
| CN102255000A (en) * | 2011-08-08 | 2011-11-23 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN102931289A (en) * | 2012-11-28 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | Preparation method of flower piece solar cell |
| CN102969401A (en) * | 2012-12-07 | 2013-03-13 | 润峰电力有限公司 | Production process of efficient crystal silicon solar battery by adopting laser isolation |
| CN102969401B (en) * | 2012-12-07 | 2016-01-13 | 润峰电力有限公司 | The production technology of laser isolation high efficiency crystalline silicon solar cell |
| CN104409536A (en) * | 2014-12-08 | 2015-03-11 | 常州天合光能有限公司 | Color photovoltaic module for building interior decoration and preparation method thereof |
| CN104505434A (en) * | 2014-12-16 | 2015-04-08 | 中国电子科技集团公司第四十七研究所 | Photocell and manufacturing method thereof |
| CN104505434B (en) * | 2014-12-16 | 2017-04-12 | 中国电子科技集团公司第四十七研究所 | Photocell and manufacturing method thereof |
| CN106169510A (en) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
| CN106169510B (en) * | 2016-09-29 | 2017-09-01 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
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