CN101777603B - Method for manufacturing back contact solar energy batteries - Google Patents
Method for manufacturing back contact solar energy batteries Download PDFInfo
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- CN101777603B CN101777603B CN2009100762644A CN200910076264A CN101777603B CN 101777603 B CN101777603 B CN 101777603B CN 2009100762644 A CN2009100762644 A CN 2009100762644A CN 200910076264 A CN200910076264 A CN 200910076264A CN 101777603 B CN101777603 B CN 101777603B
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Abstract
The invention discloses a method for manufacturing back contact solar energy batteries, comprises the following steps of: firstly growing a P type doped silicon dioxide layer on an N type silicon chip; then growing a non-doped silicon dioxide layer on a P type doped layer; after that, printing a corrosive agent or an anti corrosive agent on the non-doped silicon dioxide layer to corrode the P type doped silicon dioxide layer and the non-doped silicon dioxide layer so as to form required patterns; and finally carrying out N type adulteration on the back face and the front face of the silicon chip to form an N type doped layer. The P type doped layer is protected by the non-doped silicon dioxide layer, and an N front surface field on the front face of the battery and a PN alternating doped layer on the back face of the battery are realized in the N type doped step at the same time, thereby reducing the diffusion step, reducing the cost and simplifying the process.
Description
Technical field
The present invention relates to a kind of solar cell manufacturing technology, relate in particular to a kind of manufacturing approach of back contact solar cell.
Background technology
Solar cell be a kind of be the semiconductor device of electric energy with conversion of solar energy through photovoltaic effect; Mainly be that the basis makes with the semi-conducting material; Its operation principle is the photoelectron reaction to take place and the generation electric current after photoelectric material absorbs luminous energy, and what extensively adopt at present is silicon solar cell.The basic structure of silicon solar cell is PN junction, and when light incided in the battery, because photoelectric effect produces electron-hole pair, these minority carriers (hereinafter to be referred as few son) were quickened by the internal electric field of PN junction, are collected to get up as power storage by positive and negative electrode.
As shown in Figure 1; In the prior art one; Traditional solar cell forms PN junction at P-type material 2 diffusion into the surface one deck N type doped layers 3, when sunlight incides in the battery through antireflective coating 5, produces electron-hole pair (electron-hole) on the PN junction both sides of battery; Metal electrode 1,4 by the PN junction both sides collects electronics and hole respectively, offers external circuit.
Back contact solar cell is a kind of silicon solar cell of monocrystalline silicon high conversion efficiency, and the both positive and negative polarity of battery all is located at the back side of battery, is characterized in: front surface does not have grid line, no shading loss; Heavily doped electrode contact zone is moved to back of the body surface, avoided the influence of auger recombination battery efficiency; Positive texturing forms good sunken light action with the metal electrode reflected energy on back of the body surface.
As shown in Figure 2, in the prior art two, the typical structure of back of the body contact battery is followed successively by antireflective coating 6 from top to bottom; Silicon dioxide passivating film 7, the front-surface field 8 that the N type mixes, N type crystalline silicon matrix 9; N type/P type alternating-doping zone 10, silicon dioxide passivation layer 11, N type/P type replaces metal electrode 12.
Compare with the conventional batteries structure in the prior art one, back of the body contact cell backside need form N type/P type alternating-doping, needs the twice diffusing procedure, diffusion of N type and the diffusion of P type.
In the prior art, among the preparation method of back of the body contact N type solar cell, at first, carry out POCl simultaneously on positive and negative two surfaces of N type silicon substrate
3Mix, form N type doped region, and just, back of the body two sides all forms SiO
2Layer; Then, substrate back is carried out photoetching form figure, and carry out etching and doping of P type and printing positive and negative electrode etc., simultaneously, the front of substrate is handled accordingly.
There is following shortcoming at least in above-mentioned prior art: the realization of P type diffusion technique is difficult, technical costs is high.
Summary of the invention
The manufacturing approach of the back contact solar cell that the purpose of this invention is to provide that a kind of technology is simple, cost is low, is prone to realize.
The objective of the invention is to realize through following technical scheme:
The manufacturing approach of back contact solar cell of the present invention comprises that the P type mixes, the N type mixes, said P type mix comprise step: A, at the back side of N type silicon chip the growthing silica layer, and introduce P type doped source simultaneously, form P type doped silicon dioxide layer.
Technical scheme by the invention described above provides can be found out; The manufacturing approach of back contact solar cell of the present invention; Because the doping of P type is employed in the method for the back side growing P-type doped silicon dioxide layer of N type silicon chip, work simplification, easy realization, cost that the P type is mixed reduce.
Description of drawings
Fig. 1 is the structural representation of solar cell traditional in the prior art one;
Fig. 2 is the structural representation of back contact solar cell in the prior art two;
Fig. 3 is the schematic flow sheet of specific embodiment of the manufacturing approach of back contact solar cell of the present invention.
Embodiment
The manufacturing approach of back contact solar cell of the present invention, its preferable embodiment be, comprises that the P type mixes, the N type mixes, and wherein, the P type mixes and comprises:
Steps A, at the back side of N type silicon chip the growing P-type doped silicon dioxide layer, specifically can be at the back side of N type silicon chip the growthing silica layer, and introduce P type doped source simultaneously, form P type doped silicon dioxide layer; Afterwards, can carry out:
Step B, the plain silicon dioxide layer of on said P type doped layer, growing;
Step C, on said plain silicon dioxide layer printing corrosive agent or corrosion inhibitor, with the figure of said P type doped silicon dioxide layer and said plain silicon dioxide layer corrosion formations needs;
Step D, said substrate just, back of the body two sides carries out the N type and mixes, and forms N type doped layer.
In the above-mentioned steps A, the growing P-type doped silicon dioxide layer can adopt aumospheric pressure cvd method or plasma enhanced chemical vapor deposition method to realize, also can adopt other method deposition.Wherein, the thickness of P type doped silicon dioxide layer can be 30～150nm.Doped source can comprise boron or other P type doped source.
Above-mentioned step B can adopt same equipment to realize that wherein, the thickness of plain silicon dioxide layer can be 50～100nm with steps A.
Among the above-mentioned step C, corrosive agent can comprise that concentration is 10%～27% ammonium acid fluoride; Corrosion inhibitor can comprise corrosion resistant organic solvent etc.Specifically be corrosive agent to be coated in need the local of corrosion or corrosion inhibitor is coated in the place that need not corrode, erode away the figure that needs.
Above-mentioned step D comprises: substrate is placed among the high temperature dispersing furnace, feeds POCl
3, to substrate just, back of the body two sides carries out the N type and mixes, and makes the positive N of formation of substrate type doping front-surface field; Make the back side of substrate form N type/P type alternating-doping district.Wherein, the surperficial square resistance of N type doping front-surface field can be 10～60 Ω/.
After step D, can also be included in substrate just, back of the body two sides growthing silica layer, be used for passivation is carried out on the surface of substrate;
To the surface of said substrate carry out can also being included in after the passivation the positive of substrate or just, back of the body two sides deposition antireflective coating.Antireflective coating can comprise that thickness is SiN or the TiO of 50～200nm
2Film.Afterwards, make metal electrode at the back side of substrate.Specifically the silicon dioxide layer at the corrosion cell back side at first exposes the zone that needs form the backplate contact; Print positive and negative electrode and carry out sintering in this zone then.
Can also comprise before the above-mentioned steps A N type silicon chip is carried out surface wool manufacturing, specifically comprise with KOH and IPA mixed solution inverted pyramid type matte is processed in the front of N type silicon chip.Can also comprise before the surface wool manufacturing N type silicon chip is cleaned, can adopt specifically that mass fraction is 2%～15%, temperature is that 60 ℃～90 ℃ NaOH solution cleans.
It is the molten n type single crystal silicon sheet in district of 220～280um that N type silicon chip can be selected thickness for use, also can select other silicon chip for use.
Specific embodiment, as shown in Figure 3, technological process comprises step:
Selecting thickness for use is that the molten n type single crystal silicon sheet in district between 220～280um is a basis material; Adopting mass fraction is 2%～15%; The NaOH solution cleaning silicon chip of temperature between 60 ℃～90 ℃; The removal silicon chip surface damages, and with KOH and IPA (isopropyl alcohol) mixed solution the inverted pyramid matte is processed in the silicon chip front.
At substrate back growing P-type doped layer; Doped source can be boron or other P type alloys; This P type doped layer can pass through the various deposition of routine techniquess such as aumospheric pressure cvd method, plasma enhanced chemical vapor deposition method, and thickness is between 30～150nm.
Replace two-sided P type diffusion of the prior art with this method, can carry out better controlling, also can protect its another side not mixed the doping content and the speed of growth.
Can adopt same equipment with step 2, in deposition process, not introduce doped source, at the plain silicon dioxide layer of substrate back growing P-type doped layer shang growth one deck, this layer thickness is between 50～100nm.This layer will be in subsequent step as the diffusing protection layer of above-mentioned P type doped silicon dioxide layer.
SiO at substrate back
2Adopt typography printing corrosive agent on the layer, corrosion forms figure, and cleaning silicon chip is removed corrosive agent; Also can be at the SiO at the crystalline silicon back side
2Adopt typography printing corrosion inhibitor on the layer, the part that is not coated with corrosion inhibitor is corroded, and corrosion inhibitor can be removed through heating or UV-irradiation.
Said corrosive agent main component is that concentration is 10%～27% ammonium acid fluoride, and corrosion inhibitor is corrosion resistant organic solvent.
Substrate is placed among the high temperature dispersing furnace, feeds POCl
3, to substrate just, back of the body two sides carries out the N type and mixes, and just makes, carry on the back two sides formation N type doped layer.
The positive N type of substrate doped layer helps to improve the efficient of battery as front-surface field, and the surperficial square resistance of this layer is controlled between 10～60 Ω/.Simultaneously the back side has the doped source in the P type doped silicon dioxide layer that undoped silicon dioxide covers in hot environment, also to diffuse into silicon chip, thereby forms the figure that PN replaces with the N type doped region at the back side at cell backside.
For battery surface is carried out passivation, need just, back of the body two sides growthing silica layer.
This step can realize in the same diffusion furnace in step 5, also can adopt the same silicon dioxide growth equipment in the step 2 to realize.
When adopting the diffusion furnace equipment in the step 5, after two-sided N type diffusion finishes, two-sided growth thermal oxide layer (silicon dioxide layer) under hot environment, but the speed of growth is relatively slow;
When adopting the silicon dioxide growth equipment in the step 2, because can only single sided deposition, need deposit the silicon dioxide layer of front and back respectively, but the speed of growth is very fast.
Step 7, deposition antireflective coating:
At the positive routine techniques deposition antireflective coating that adopts of substrate, this antireflective coating can be SiN or TiO
2Film, thickness is between 50～200nm.Also can all deposit antireflective coating in both sides.
Step 8, corrode silicon dioxide:
The silicon dioxide at the corrosion cell back side exposes the zone that will form the backplate contact, and process is with step 4.
Adopt screen printing technique ripe in the industry at silicon chip back up positive and negative electrode, electrode material can be Al, Ag or other alloys.
The present invention adopts deposition P type doped layer to replace high temperature dispersing furnace to carry out the P type and mixes, reduced the technology difficulty, simple possible; Adopt unadulterated silicon dioxide layer that P type doped layer is protected; Finally in an only N type diffusing step, the N type surface field of battery front side and the PN alternating-doping of cell backside have been realized simultaneously; Reduced diffusing step; Reduced the infringement of energy consumption and hot environment, made cost reduce work simplification silicon chip.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (17)
1. the manufacturing approach of a back contact solar cell comprises that the P type mixes, the N type mixes, and it is characterized in that said P type mixes and comprises step:
A, at the back side of N type silicon chip the growthing silica layer, and introduce P type doped source simultaneously, form P type doped silicon dioxide layer;
B, the plain silicon dioxide layer of on said P type doped layer, growing;
C, on said plain silicon dioxide layer printing corrosive agent or corrosion inhibitor, with the figure of said P type doped silicon dioxide layer and said plain silicon dioxide layer corrosion formations needs.
2. the manufacturing approach of back contact solar cell according to claim 1 is characterized in that, in the said steps A, the growing P-type doped silicon dioxide layer adopts aumospheric pressure cvd method or plasma enhanced chemical vapor deposition method to realize.
3. the manufacturing approach of back contact solar cell according to claim 2 is characterized in that, the thickness of said P type doped silicon dioxide layer is 30～150nm.
4. according to the manufacturing approach of claim 1,2 or 3 described back contact solar cells, it is characterized in that in the said steps A, said P type doped source comprises boron.
5. the manufacturing approach of back contact solar cell according to claim 1 is characterized in that, carries out step after the said step C:
D, said substrate just, back of the body two sides carries out the N type and mixes, and forms N type doped layer.
6. the manufacturing approach of back contact solar cell according to claim 5 is characterized in that, said step B and said steps A adopt same equipment to realize.
7. according to the manufacturing approach of claim 5 or 6 described back contact solar cells, it is characterized in that the thickness of said plain silicon dioxide layer is 50～100nm.
8. the manufacturing approach of back contact solar cell according to claim 5 is characterized in that, among the said step C, said corrosive agent comprises that concentration is 10%～27% ammonium acid fluoride; Said corrosion inhibitor comprises corrosion resistant organic solvent.
9. the manufacturing approach of back contact solar cell according to claim 5 is characterized in that, said step D comprises:
Substrate is placed among the high temperature dispersing furnace, feeds POCl
3, to substrate just, back of the body two sides carries out the N type and mixes, and makes the positive N of formation of substrate type doping front-surface field; Make the back side of substrate form N type/P type alternating-doping district.
10. the manufacturing approach of back contact solar cell according to claim 9 is characterized in that, the surperficial square resistance of said N type doping front-surface field is 10～60 Ω/.
11. the manufacturing approach of back contact solar cell according to claim 1; It is characterized in that; Comprise before the said steps A said N type silicon chip is carried out surface wool manufacturing, specifically comprise with KOH and IPA mixed solution inverted pyramid type matte is processed in the front of said N type silicon chip.
12. the manufacturing approach of back contact solar cell according to claim 11; It is characterized in that; Comprise before the said surface wool manufacturing said N type silicon chip is cleaned, adopt specifically that mass fraction is 2%～15%, temperature is that 60 ℃～90 ℃ NaOH solution cleans.
13. the manufacturing approach of back contact solar cell according to claim 1 is characterized in that, said N type silicon chip is that thickness is the molten n type single crystal silicon sheet in district of 220～280um.
14. the manufacturing approach of back contact solar cell according to claim 5 is characterized in that, be included in after the said step D said substrate just, back of the body two sides growthing silica layer, be used for passivation is carried out on the surface of said substrate.
15. the manufacturing approach of back contact solar cell according to claim 14 is characterized in that, the surface of said substrate is carried out comprising after the passivation: at the positive of said substrate or just, back of the body two sides deposition antireflective coating.
16. the manufacturing approach of back contact solar cell according to claim 15 is characterized in that, said antireflective coating comprises that thickness is SiN or the TiO of 50～200nm
2Film.
17. the manufacturing approach of back contact solar cell according to claim 15 is characterized in that, at the positive of said substrate or just, be included in the back side making metal electrode of said substrate after the deposition antireflective coating of back of the body two sides, specifically comprises:
At first the silicon dioxide layer at the corrosion cell back side exposes the zone that needs form the backplate contact; Print positive and negative electrode and carry out sintering in this zone then.
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| CN101777603B true CN101777603B (en) | 2012-03-07 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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