CN101714583B - Flexible thin film solar cell and preparation method thereof - Google Patents
Flexible thin film solar cell and preparation method thereof Download PDFInfo
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- CN101714583B CN101714583B CN2009102066977A CN200910206697A CN101714583B CN 101714583 B CN101714583 B CN 101714583B CN 2009102066977 A CN2009102066977 A CN 2009102066977A CN 200910206697 A CN200910206697 A CN 200910206697A CN 101714583 B CN101714583 B CN 101714583B
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- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 62
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 18
- 239000011787 zinc oxide Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 14
- 229920006254 polymer film Polymers 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 33
- 238000005516 engineering process Methods 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 20
- 229920005570 flexible polymer Polymers 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 7
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 7
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
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- 229920000307 polymer substrate Polymers 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
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- 239000000047 product Substances 0.000 description 5
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- 239000004332 silver Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 ITO Chemical class 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012296 anti-solvent Substances 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- 230000001172 regenerating effect Effects 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a flexible thin film solar cell, wherein the cell comprises the following structures: a light inlet substrate (21) which is formed from a flexible thin polymer film; a first electrode layer (22) which is formed by depositing zinc oxide on the light inlet substrate (21); a photoelectric conversion layer (23) which consists of p-type, i-type and n-type amorphous silicon layers formed in turn on the first electrode layer (22); and a second electrode layer (24) which is formed by depositing zinc oxide on the photoelectric conversion layer (23). The preparation method forms front and back electrode layers of the thin film solar cell by adopting a zinc oxide low-temperature deposition process, enables the thin polymer film to be taken as a flexible substrate, and can transplant the process for manufacturing the thin film solar cell with a glass substrate to the process for manufacturing the flexible thin film solar cell with a polymer substrate.
Description
Technical field
The present invention relates to solar cell fabrication process, particularly be used for a kind of flexible thin-film solar cell and preparation method thereof.
Background technology
Along with high speed development, the technology of modern industry updates and to demands for energy, the change of essence is taking place energy resource structure now fast.Traditional energy: the use amount of coal, oil, natural gas will arrive the peak in the year two thousand twenty-the year two thousand forty, and after the year two thousand fifty, will peter out.Regenerative resource alternative energy sources such as (mainly being solar energy) is since fast development in 2000, to the year two thousand fifty use amount will peak.Conventional solar cell is to use monocrystalline silicon or polysilicon thin slice, and wherein the silicon materials application is more, and waste is serious, and element silicon purifying technique complicacy and cost are too high.Thin-film solar cells is used amorphous silicon or other materials; The element silicon amount is used and seldom or is not used silicon materials; So do not have the raw material bottleneck basically, amorphous silicon thin-film solar cell especially, the low and technical maturity of cost; So develop very soon, become one of the most ripe product of current thin film solar cell.
The amorphous microcrystalline silicon film solar batteries is the handsome person in the hull cell industrialization technology of new generation; It is good at conversion efficiency height, good stability, main feature such as with low cost, becomes the mainstream technology that at first realizes the electrical network equivalent point in the photovoltaic technology probably.The conventional films battery is that the basis makes with the glass substrate, and glass is a kind of good protective material, has good light transmittance again, is a kind of excellent backing material.But glass also has its limitation, and is heavier like the inflexibility property and the weight of glass, influences its application in some special dimension.Relatively more direct like the curved face type product, as the sunlight window of roof of the vehicle, or the solar power system that the subsides wing is installed on the UAV etc.; Portable for another example, can roll up folding charging system etc.; In addition, the requirement of a lot of general character was that the weight of system is low weight during these were used, and this is even more important concerning aerospace applications.The backing material of existing flexible thin-film solar cell adopts stainless steel film and polymer film usually.Because the stainless steel film cost is high, heavy and have conductivity, therefore will satisfy the needs of above these application, the light-weight polymer film is a kind of more satisfactory backing material.It is non-conductive, therefore can use ready-made laser cutting parameter to make assembly, and cut series connection again then after need hull cell not being processed again.Polymer substrate such as polyimides (Kapton) film has high-low temperature resistant, acidproof alkali, anti-solvent, electric insulation (H level), radiation proof, is fit to the vacuum filming technology, and performance such as thin thickness and pulling force be good, is a kind of good selection of flexible solar battery.
As shown in Figure 1, a kind of layer structure of traditional unijunction amorphous silicon thin-film solar cell shown in it.This amorphous silicon thin-film solar cell is a deposition, sputter sensitive surface electrode 2, photoelectric conversion layer 3, rear surface electrode 4 and form successively on transparency carrier 1 (mainly being glass).As transparency carrier 1, can adopt glass plate, transparent resin film etc.Sensitive surface electrode 2 is made up of for example ITO transparent conductive oxides such as (pluging with molten metal tin-oxide).Begin from sensitive surface electrode 2 sides, photoelectric conversion layer 3 has the laminated structure of p type amorphous silicon layer, i type amorphous silicon layer and n type amorphous silicon layer.Rear surface electrode 4 is made up of the laminated film of metal materials such as for example silver, aluminium, titanium, copper and metal oxides such as ITO, SnO.
Yet traditional in the past hull cell technology no matter be p-i-n structure or n-i-p structure, all has at least one procedure to adopt higher temperature, promptly surpasses the highest bearing temperature (about 400 ℃) of polymer film.Electrically conducting transparent membrane material as adopting aumospheric pressure cvd method (APCVD) to form as electrode with tin oxide in the p-i-n structure is on the temperature about 500 ℃, to prepare; In the n-i-p structure, then will form the silver layer that possesses good suede structure also is under quite high underlayer temperature, to prepare.Therefore traditional technology is difficult, and even change technology and reduce coating temperature, the conversion efficiency of the solar cell of made is lower to be applied to flexible polymer substrate, and generally below 5%, it is too high to influence effect and cost.
Therefore this tradition thin-film solar cells manufacturing process that is used for glass substrate is difficult to directly transplanting and is applied to make with the manufacturing of polymeric material as the flexible thin-film solar cell of substrate.
Summary of the invention
In order to be applied to make the thin-film solar cells of flexible substrate after realizing the thin-film solar cells manufacturing process of traditional glass substrate revised a little, a kind of novel flexible thin-film solar cell and manufacturing approach thereof are proposed at this.
According to an aspect of the present invention, a kind of flexible thin-film solar cell is provided, comprising following structure: advance light face substrate with what flexible polymer film constituted at this; Advancing first electrode layer that deposit zinc oxide forms on the light face substrate; The photoelectric conversion layer that on first electrode layer, constitutes by the p type that forms successively, i type and n type amorphous silicon layer; And the second electrode lay that deposit zinc oxide forms on said photoelectric conversion layer.
According to another aspect of the present invention, a kind of flexible thin-film solar cell is provided, comprising following structure: the shady face substrate that constitutes with flexible polymer film at this; The third electrode layer that deposit zinc oxide forms on the shady face substrate; The photoelectric conversion layer that on the third electrode layer, constitutes by the n type that forms successively, i type and p type amorphous silicon layer; And the 4th electrode layer that deposit zinc oxide forms on said photoelectric conversion layer.
According to another aspect of the present invention, wherein said advance light face substrate by light transmission greater than 80% and the thin polymer film that can bear greater than 200 ℃ temperature constitute; Said shady face substrate is made up of the thin polymer film that can bear greater than 200 ℃ temperature.
According to another aspect of the present invention, the wherein said material that advances light face substrate adopts PEN (PEN) or polyether sulfone (PES); The material of said shady face substrate adopts PEN (PEN), polyether sulfone (PES) or polyimides (Kapton) material.
According to another aspect of the present invention, wherein said first to fourth electrode layer is to adopt low-pressure chemical vapor phase deposition (LPCVD) technology deposit zinc oxide under 150 ℃-250 ℃ temperature to form.
The present invention also provides a kind of method of making flexible thin-film solar cell, comprising following steps: form into light face substrate with flexible polymer film; Advancing on the light face substrate deposit zinc oxide as first electrode layer; On first electrode layer by the p type that forms successively, i type and n type amorphous silicon layer as photoelectric conversion layer; And on said photoelectric conversion layer deposit zinc oxide as the second electrode lay.
The present invention also provides the another kind of method of making flexible thin-film solar cell, comprising following steps: form the shady face substrate with flexible polymer film; Deposit zinc oxide is as the third electrode layer on the shady face substrate; On the third electrode layer by the n type that forms successively, i type and p type amorphous silicon layer as photoelectric conversion layer; And on said photoelectric conversion layer deposit zinc oxide as the 4th electrode layer.
Description of drawings
Fig. 1 illustrates the layer structure of general thin solar cell;
Fig. 2 illustrates the layer structure according to p-i-n flexible thin-film solar cell of the present invention;
Fig. 3 illustrates the layer structure according to n-i-p flexible thin-film solar cell of the present invention; And
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.
Embodiment
Because being used for the thin-film solar cells manufacturing process of glass substrate, the tradition that preceding text are mentioned to directly apply to the high efficiency flexible thin-film solar cell of manufacturing; Changing into manufacturing for the thin-film solar cells manufacturing process that realizes making glass substrate is the flexible thin-film solar cell of substrate with the polymer film, and reduces the equipment input cost and improve product efficiency.The present invention proposes a kind of novel flexible thin-film solar cell and manufacturing approach thereof.
Because tradition is used for the thin-film solar cells manufacturing process of glass substrate; Generally adopt aumospheric pressure cvd method (APCVD) to form nesa coating when making the p-i-n thin-film solar cells as electrode with tin oxide, and when making the n-i-p thin-film solar cells general employing need at high temperature process have good suede structure silver layer as back electrode.Therefore need to revise the high-temperature technology that these form electrode film, reduce the temperature that forms electrode film.For this reason, the present invention adopts with the zinc oxide material of low-pressure chemical vapor phase deposition (LPCVD) technology preparation and makes thin-film solar cells as the front and back electrode, because its preparation temperature is no more than 250 ℃, so can be easy to adopt the flexible polymer substrate material.Owing to need not change the basic technology condition, thus the conversion efficiency of battery can be accomplished and on glass substrate basically identical, promptly at present about 9%.
Specifically, for p-i-n type structure, only glass substrate is replaced as flexible polymer substrate.In manufacturing process, can the transparent polymer substrate be attached on the glass substrate, technology need not done big change when making like this.Take off from glass plate after completing, final product is made in row encapsulation more as required then again.
Carry out on the glass substrate the various technology production processes except that polymer substrate is attached on, can also use reel-to-reel (roll-to-roll) method and directly use flexible polymer substrate to process.This method possibly all will be done bigger change to all machines.
As the encapsulating material of sunlight incident one side, the used backing material of this p-i-n structure must satisfy several conditions simultaneously, that is:
Light transmission＞80%
Temperature tolerance, the withstand temperature palpus of substrate＞200 ℃
As, then need have performances such as stronger permeability resistance and uvioresistant ray directly as encapsulating material
Other physics and chemical property are like stretching resistance, hot coefficient of dilatation, corrosion resistance or the like
In order all to satisfy above terms and conditions, the present invention adopts the backing material of following two kinds of polymeric materials as flexible thin-film solar cell:
A) through heat treated PEN (PEN): this material can bear and surpass 200 ℃ treatment temperature, because its anti-ultraviolet performance is bad, and easy ageing.Therefore, need in addition with glass or ethylene-tetrafluoroethylene copolymer (Tefzel), perhaps will be attached to the glass of building inner surface with the glass shielding of ultraviolet as the thin-film solar cells of substrate, prevent that film-substrate is aging with PEN as the front encapsulating material.
B) PES (polyether sulfone): this material is a kind of possible PEN substitution material, and not only temperature tolerance is good, and anti-ultraviolet property is also preferable.
For the n-i-p structure, be about to flexible substrate and be placed on shady face, on n, i, the order of p is plated film successively.The alternative backing material kind of this kind structure is some more relatively, because the high light transmittance condition can be relaxed slightly.Except that above PEN and PES material, Kapton is a kind of available flexible substrate material.Because its light transmission is relatively poor, whole solar cell there is the application product than the high light transmittance requirement, like sun roof etc., then not too suitable.
This constructed products useable glass or Tefzel be as the front encapsulating material, and back of the body encapsulating material can be glass or polymeric material, like thermoplastic's polyester (TPT) etc., perhaps not adds back of the body encapsulation.
The structure and the manufacturing process of flexible thin-film solar cell of the present invention are described with reference to the accompanying drawings.
Fig. 2 illustrates the layer structure according to p-i-n flexible thin-film solar cell of the present invention.Wherein flexible substrate 21 is for advancing light face substrate, its adopt light transmission greater than 80%, withstand temperature is greater than 200 ℃ thin polymer film.The preferred film that adopts PEN (PEN) or PES (polyether sulfone) material.On the flexible substrate 21 through LPCVD technology under about 150 ℃-250 ℃ temperature deposit zinc oxide (ZnO) as preceding electrode 22; The laminated structure that on preceding electrode, forms p type, i type and n type amorphous silicon layer successively then is as photoelectric conversion layer 23, and this photoelectric conversion layer 23 can be the laminated construction that many group p-i-n layers are arranged.At last on the photoelectric conversion layer 23 through LPCVD technology under about 150 ℃-250 ℃ temperature deposit zinc oxide (ZnO) as back electrode 24.
Fig. 3 illustrates the layer structure according to n-i-p flexible thin-film solar cell of the present invention.Wherein flexible substrate 34 is the shady face substrate, and it adopts withstand temperature greater than 200 ℃ thin polymer film.The preferred film that adopts PEN (PEN), PES (polyether sulfone) or Kapton (polyimides) material.On the flexible substrate 34 through LPCVD technology under about 150 ℃-250 ℃ temperature deposit zinc oxide (ZnO) as back electrode 33; The laminated structure that on preceding electrode, forms n type, i type and p type amorphous silicon layer successively then is as photoelectric conversion layer 32, and this photoelectric conversion layer 32 can be the laminated construction that many group n-i-p layers are arranged.At last on the photoelectric conversion layer 32 through LPCVD technology under about 150 ℃-250 ℃ temperature deposit zinc oxide (ZnO) as preceding electrode 31.
Though described execution mode of the present invention in conjunction with accompanying drawing, those skilled in the art can make various distortion or modification within the scope of the appended claims.
Claims (10)
1. flexible thin-film solar cell, comprising following structure:
Advance light face substrate (21) with what flexible polymer film constituted, said substrate can bear the temperature greater than 200 ℃;
Advancing upward first electrode layer (22) of deposit zinc oxide formation of light face substrate (21);
Go up the photoelectric conversion layer (23) that constitutes by the p type that forms successively, i type and n type amorphous silicon layer at first electrode layer (22); And
Go up the second electrode lay (24) that deposit zinc oxide forms at said photoelectric conversion layer (23); Wherein, first electrode layer (22) and the second electrode lay (24) are to adopt low-pressure chemical vapor phase deposition (LPCVD) technology deposit zinc oxide under 150 ℃-250 ℃ temperature to form.
2. flexible thin-film solar cell according to claim 1, wherein:
Advancing light face substrate (21) is made up of greater than 80% thin polymer film light transmission.
3. flexible thin-film solar cell according to claim 1 and 2, wherein:
The material that advances light face substrate (21) adopts PEN (PEN) or polyether sulfone (PES).
4. flexible thin-film solar cell, comprising following structure:
With the shady face substrate (34) that flexible polymer film constitutes, said substrate can bear the temperature greater than 200 ℃;
Go up the third electrode layer (33) that deposit zinc oxide forms at shady face substrate (34);
Go up the photoelectric conversion layer (32) that constitutes by the n type that forms successively, i type and p type amorphous silicon layer at third electrode layer (33); And
Go up the 4th electrode layer (31) that deposit zinc oxide forms at said photoelectric conversion layer (32); Wherein, described third electrode layer (33) and the 4th electrode layer (31) are to adopt low-pressure chemical vapor phase deposition (LPCVD) technology deposit zinc oxide under 150 ℃-250 ℃ temperature to form.。
5. flexible thin-film solar cell according to claim 4, wherein:
The material of shady face substrate (34) adopts PEN (PEN), polyether sulfone (PES) or polyimides (Kapton) material.
6. method of making flexible thin-film solar cell, comprising following steps:
Form into light face substrate (21) with flexible polymer film, said substrate can bear the temperature greater than 200 ℃;
Advancing the last deposit zinc oxide of light face substrate (21) as first electrode layer (22);
Go up by the p type that forms successively, i type and n type amorphous silicon layer as photoelectric conversion layer (23) at first electrode layer (22); And
Go up deposit zinc oxide as the second electrode lay (24) at said photoelectric conversion layer (23); Wherein, adopt low-pressure chemical vapor phase deposition (LPCVD) technology deposit zinc oxide under 150 ℃-250 ℃ temperature to form said first electrode layer (22) and said the second electrode lay (24).
7. the method for manufacturing flexible thin-film solar cell according to claim 6, wherein:
The employing light transmission constitutes into light face substrate (21) greater than 80% thin polymer film.
8. according to the method for claim 6 or 7 described manufacturing flexible thin-film solar cells, wherein:
Adopt PEN (PEN) or polyether sulfone (PES) to constitute and advance light face substrate (21).
9. method of making flexible thin-film solar cell, comprising following steps:
Form shady face substrate (34) with flexible polymer film, said substrate can bear the temperature greater than 200 ℃;
Go up deposit zinc oxide as third electrode layer (33) at shady face substrate (34);
Go up by the n type that forms successively, i type and p type amorphous silicon layer as photoelectric conversion layer (32) at third electrode layer (33); And
Go up deposit zinc oxide as the 4th electrode layer (31) at said photoelectric conversion layer (32); Wherein, adopt low-pressure chemical vapor phase deposition (LPCVD) technology deposit zinc oxide under 150 ℃-250 ℃ temperature to constitute said third electrode layer (33) and said the 4th electrode layer (31).
10. the method for manufacturing flexible thin-film solar cell according to claim 9, wherein:
Adopt PEN (PEN), polyether sulfone (PES) or polyimides (Kapton) material to constitute shady face substrate (34).
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| CN103258881A (en) * | 2013-05-07 | 2013-08-21 | 杨立友 | Thin film solar cell panel and preparation method of same |
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| CN103296114B (en) * | 2013-05-07 | 2015-09-23 | 宁波山迪光能技术有限公司 | Solar telephone skylight and preparation method thereof |
| CN103465385B (en) * | 2013-09-18 | 2015-09-16 | 北京汉能创昱科技有限公司 | A kind of flexible thin-film solar cell and burst, connection and preparation method |
| CN113878979B (en) * | 2021-12-06 | 2022-03-15 | 杭州晶宝新能源科技有限公司 | Manufacturing method of precision template, precision template and application |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103258881A (en) * | 2013-05-07 | 2013-08-21 | 杨立友 | Thin film solar cell panel and preparation method of same |
| CN103258881B (en) * | 2013-05-07 | 2015-11-11 | 宁波山迪光能技术有限公司 | Thin-film solar cell panel and preparation method thereof |
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