CN201038178Y - Flexible solar cell - Google Patents
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- CN201038178Y CN201038178Y CNU2007201181546U CN200720118154U CN201038178Y CN 201038178 Y CN201038178 Y CN 201038178Y CN U2007201181546 U CNU2007201181546 U CN U2007201181546U CN 200720118154 U CN200720118154 U CN 200720118154U CN 201038178 Y CN201038178 Y CN 201038178Y
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Abstract
The utility model relates to a solar photovoltaic battery made on a modified flexible base piece with high light transmittance, belonging to flexible amorphous silicon film solar battery manufacture technical field. The utility model aims at improving the photoelectric conversion efficiency, takes the modified polyimide PI base piece with the light transmittance of 90 percent to 93 percent, changes the amorphous silicon PIN film laminated structure, in order to prepare single-junction or multijunction amorphous silicon battery by splashing and depositing the conductive film and the PI base piece with the temperature of more than 350 DEG C. The utility model has the active effects that the preparation and application of the modified base piece without deformation after 4 hours in high temperature of 350 DEG C through 400 DEG C, obviously improves the photoelectric conversion efficiency and the performance/price ratio of the flexible amorphous silicon solar battery.
Description
Technical field
The utility model patent relates on the flexible substrate of the high transmission rate of modification makes solar-energy photo-voltaic cell, belongs to flexible amorphous silicon film solar cell manufacturing technology field.
Background technology
At present, the solar cell of commercially producing is divided into two big classes, and a class is block crystal silicon solar energy battery, and another kind of is to be the thin-film solar cells of representative with non-crystal silicon solar cell and copper indium diselenide solar cell.Thin film solar can be divided into hard substrate and soft substrate film solar cell again with type of substrate.Now, thin-film solar cells market is substrate with glass mainly, belongs to hard substrate battery, product possession share maximum.Soft comparatively speaking substrate membrane solar cell seems as phoenix hair phoenix feathers and unicorn horns also seldom in market, and key is to select suitable base material can satisfy the manufacturing technology requirement simultaneously again, and difficulty is big.Existing soft base material mainly is stainless steel substrates and polyimide material, the polyimide film of one of flexible solar battery preferred material, and in light weight, cost is low, and shortcoming is opaque or translucent, the printing opacity rate variance.No matter existing flexible solar battery is that to adopt polyimide film be substrate, and still stainless steel substrates or other metal alloy film are substrate, and the structure of flexible amorphous silicon solar cell all.China Patent No. 98108941.0 " solar cell and manufacture method thereof ", successively according to substrate, N type amorphous silicon layer, intrinsic amorphous silicon layer, P type amorphous silicon, laminated construction, flexible thin-film battery, process deposits is that N → I → P is just in time opposite with laminated construction of the present utility model and technology in proper order.At present, make flexible solar battery on a large scale, all adopting takeup type plated film mode is the roll-to-roll pattern, and the mode of this manufacturing amorphous silicon flexible solar battery is that production equipment involves great expense, complex manufacturing, product cost height.The price of the flexible solar battery of having sold on the market like this is suitable with the price of crystal silicon solar energy battery, comparing with the sexual valence of crystal silicon solar energy battery does not have advantage, this also is that flexible solar battery growth for many years is unhappy, the major reason that production capacity is little.
The utility model content
At the above flexible solar battery that adopts polyimide base film of mentioning, because of product structure and technological problems, it is low to influence the thin-film solar cells transformation efficiency.
The utility model is a purpose to improve electricity conversion, use the polyimide base film (hereinafter to be referred as the PI substrate) of modification, change the sequence arrangement structure between the amorphous silicon membrane lamination, amorphous silicon can be unijunction or many knots, improves the photoelectric conversion efficiency of flexible solar battery.
Another purpose of the present utility model, light tight or semi-transparent base material is polyimide modified, sputtering sedimentation nesa coating on the substrate more than 350 ℃, produce the nesa coating of function admirable, make the substrate of high transmission rate, the photoelectric conversion efficiency of flexible amorphous silicon solar cell is improved significantly.
In conjunction with the technical problem that the utility model proposed and the task of realization, technical solution is: with flexible, transparent PI modification substrate is the battery of substrate, it can be the flexible amorphous silicon solar cell of unijunction or many knots, with the high molecular polymer is the amorphous silicon membrane battery of substrate, comprise the thin film amorphous silicon battery that unijunction or many structures become, it is characterized in that with modified polyimide PI transparent substrate being the fexible film amorphous silicon battery of substrate, be included in P type amorphous silicon layer, I intrinsic layer, N type amorphous silicon membrane layer on the nesa coating TCO of PI substrate; Or, form many knot lamination amorphous silicon membrane layers by the stack of a plurality of PIN knot, and comprising that also layer of metal film Al constitutes the flexible amorphous silicon solar cell, said PIN knot is homojunction or heterojunction.
Said PI substrate is by the polyamic acid slurry, a kind of flexible substrate material that silk screen printing or spraying form on the thick corrosion resistant plate of 0.5mm.
P type amorphous silicon membrane layer 70 -120 of the unijunction on the PI transparent substrate, I type amorphous silicon membrane layer 700 -900 , N type amorphous silicon 150 -250 .PIN is a binode on the PI transparent substrate, amorphous silicon membrane layer deposition is under 220 ℃ of-250 ℃ of conditions of temperature, vacuum moulding machine top battery P type amorphous silicon membrane layer, top battery I type amorphous silicon membrane layer, end battery I type amorphous silicon membrane layer, end battery N type amorphous silicon layer, the P type microcrystalline silicon film layer of battery and top battery N type microcrystalline silicon film layer at the bottom of 300 ℃ of-400 ℃ of temperature deposit form tunnel junction.
The binode laminated cell comprises also comprising the PI transparent substrate of modified polyimide and be docile and obedient the stacked film of preface on the PI transparent substrate: by composite transparent conductive film TCO; P type amorphous silicon P
+A-Si; Intrinsic amorphous silicon Ia-Si; N type microcrystal silicon; P type microcrystal silicon; Intrinsic amorphous silicon Ia-Si; N type amorphous silicon N
+A-Si; Metal film Al forms.Unijunction thin film amorphous silicon battery is that the PI substrate with flexible and transparent is a substrate, thereon sequential cascade nesa coating TCO, P type amorphous silicon P
+A-Si, intrinsic amorphous silicon I a-Si, N type amorphous silicon N
+A-Si and metal film Al.
The flexible amorphous silicon solar cell of the utility model unijunction mentioned above or binode, the difference of making the flexible amorphous silicon solar cell with existing opaque PI substrate mainly contains 2 points, first point, the pellicular cascade structural order difference of battery, the unijunction that the utility model proposes or many knots, all be to make the PIN thin layer on substrate successively, the latter's order then is the NIP thin layer; Second point, the utility model adopts the PI substrate of the flexible and transparent of modification, and the latter adopts opaque substrate.First point though difference only is the order difference of laminated construction, relates to the technology difference for the hull cell of microstructure, directly influence the photoelectric conversion efficiency of product.
The utility model is being mentioned in the manufacture method of product manufacturing on the PI substrate, and deposition P layer deposits the I layer more earlier, and its meaning is the improvement that helps intrinsic layer I performance.Usually intrinsic layer I amorphous silicon I a-Si is weak N type, earlier deposition P type amorphous silicon P
+A-Si, deposition intrinsic amorphous silicon I a-Si utilizes deposition P type amorphous silicon P naturally again
+Residual Determination of Trace Boron B atom during a-Si, intrinsic layer amorphous silicon I a-Si is carried out the neutralization of appropriateness, make intrinsic layer amorphous silicon I a-Si become the intrinsic amorphous silicon of complete neutrality by original weak N type, help improving the light sensitive characteristic of intrinsic layer amorphous silicon I a-Si, thereby improve the transformation efficiency of battery.
Second difference, the substrate that the utility model adopts has very high visible light transmittance rate.Under 300 ℃～400 ℃ environment, continue to be heated 4 hours indeformable, never degenerate, and light transmittance still can keep 90%～93%.
Analyzing the above reason that produces, is the priority step difference of technology in the manufacture method.Usually the optimised process temperature of TCO film preparation is between 350 ℃-400 ℃, and as U.S. Pat 5356656, disclosed PI substrate also can be high temperature resistant, owing to adopt the battery structure of opaque PI substrate and NIP.Must be on the PI substrate first deposited amorphous silicon fiml, back deposition TCO film, cause because of 350 ℃-400 ℃ of the depositing temperatures of TCO film greater than 220 ℃-250 ℃ of the depositing temperatures of amorphous silicon film, the amorphous silicon film that causes previous deposition a large amount of high temperature occurs and releases the hydrogen phenomenon under 350 ℃ of-400 ℃ of high temperature.Caused amorphous silicon film a large amount of microvoids hole to occur, the amorphous silicon performance sharply decays, and battery electrical property is decayed thereupon.Though temperature openly in the file, according to theoretical derivation, if 200 ℃ of temperature with deposit TCO film, the light transmittance of film and face resistance become relatively poor.Finally can influence the conversion efficiency and the load-carrying ability of solar cell.And battery structure decision processing step of the present utility model adopts deposition TCO film earlier, therefore can obtain all good TCO film of light transmittance and face resistance at 350 ℃-400 ℃ optimised process temperature deposition TCO film.
The motivation that relates to the processing step adjustment also is, temperature is reduced successively, helps keeping the amorphous silicon film stability.Contribution of the present utility model is, break through taboo, motivation with 350 ℃-400 ℃ of depositing temperature raisings, it is adjustment to processing step, at high temperature release hydrogen in a large number except the above said amorphous silicon film of avoiding, also can prevent P, I and I, N interface diffusion of impurities at high temperature causes I layer amorphous silicon film performance degradation.
According to another purpose that the utility model proposes and the technical problem of proposition, significant contribution of the present utility model is that the polyimide base film of said modification is a kind of PI substrate with high transmission rate 90%-93%, in temperature is under 350 ℃ of-400 ℃ of vacuum conditions, heatproof 4 hours is indeformable, and its molecular formula is as follows:
Solving according to the purpose of this utility model and technical problem is the manufacture method of product, and distinguishing characteristics is that the processing step adjustment is as follows:
1) preparation: modified polyimide becomes transparent substrate;
2) on transparent substrate, adorn special framework;
3) magnetron sputtering composite transparent conductive film TC0;
4) preheating: transparent substrate dress deposition clamp, 220 ℃-250 ℃ of temperature, preheating 1.5-2 hour;
5) deposition: in the vacuum chamber, 220 ℃-250 ℃ of temperature, deposition of amorphous silicon P, I, N film; At 300 ℃ of-400 ℃ of deposit P types and N type microcrystalline silicon film layer, form the tunnel junction of thin film amorphous silicon battery;
6) laser processing.
According to the technical solution that the utility model proposes: the polyimides of the preparation modification of PI substrate, fill a prescription in molar ratio: 3,3`-three fluoro dimethyl-4,4` MDA: N, N-dimethylacetylamide: 2,3,3`, 4`-bibenzene tetracarboxylic dianhydride=(0.9～1.1): (45～50): (0.9～1.1) makes the transparent substrate of modification.
Use this substrate, because high light transmission can obtain than the higher conversion efficiency of solar cell that with glass is substrate.
The good effect that the utility model produces mainly adopts modified polyimide PI substrate, at sputtering sedimentation conducting film more than 350 ℃, the substrate of high transmission rate produces the nesa coating of function admirable, make the photoelectric conversion efficiency and the cost performance of flexible amorphous silicon solar cell, have significantly and improve.
Traditional at low temperature below 200 ℃, the nesa coating poor-performing that deposits on soft substrate has increased the face resistance of nesa coating, is unfavorable for improving the conversion efficiency of solar cell.
Under the substrate temperature of the utility model more than 300 ℃, on the modified polyimide substrate, deposition is formed the high-quality N type and the P type microcrystal silicon of lamination amorphous silicon battery tunnel junction.Usually substrate temperature is high more; the energy that is deposited on on-chip atom more than 300 ℃ is just big more; the substrate surface that is strapped in that might shake off substrate more moves freely; be adjusted at residing position on the substrate; and reach optimum state; thereby the defective in the minimizing microcrystalline sillicon film is prepared the microcrystalline sillicon film of high-quality.Otherwise when substrate temperature was lower than 200 ℃, the microcrystalline sillicon film defective of preparation was more, poor-performing.
The utility model framework is the device that clamps exceptionally straight PI substrate, adopt a kind of firm resistant to elevated temperatures rigid material, make the installation and removal of modified polyimide substrate convenient, be difficult for breaking, fully can with the production technology compatibility of existing glass substrate non-crystal silicon solar cell, use opaque flexible substrate to compare with U.S. Pat 5356656, have following advantage and remarkable result:
Under higher temperature, can take out battery, shorten the cooling stand-by period, can be that the non-crystal silicon solar cell production equipment of substrate and technology are compatible mutually with glass, do not need in addition new production line again, compare with the expensive production equipment of roll-to-roll non-crystal silicon solar cell, equipment investment cost is low.
The manufacturing process flow and the step of the utility model flexible amorphous silicon solar cell:
After step 8, deposition clamp are come out of the stove, the modified polyimide substrate on the substrate frame in the deposition clamp and its is taken out and under the environment below 20 ℃, carry out fast cooling.
Step 10, will be laser carved amorphous silicon film the modified polyimide substrate together with its fixed frame, place aluminum-spraying machine to be coated with the aluminum metal film.
Step 11, general the modified polyimide substrate of plated aluminum metallic film place laser scribing machine that metallic film is delineated metallic film by delineating corresponding position with amorphous silicon together with framework.
Step 12, the modified polyimide substrate that will delineate metallic film can be to complete flexible amorphous silicon solar cell from unloading fast on the fixed frame.
The utility model provides a kind of light transmittance 90%-93% and thermal endurance to reach 350 ℃-400 ℃ modified polyimide substrate, can adopt and be same battery structure and preparation technology's flow process of substrate with glass, because this technology allows TCO to prepare under the temperature that is higher than more than 350 ℃, and deposition P layer amorphous silicon has compensating action to I layer amorphous silicon earlier, therefore can obtain than with opaque flexible substrate higher battery conversion efficiency and electrical property, on the other hand since the light transmittance of modified polyimide substrate of the present utility model than glass height, even can obtain than with glass being higher battery conversion efficiency of substrate and electrical property.
The utility model also provides the unique frame structure of the ultrathin modified polyimide base film of a kind of clamping, compatibility and utilization have the technology and the production equipment of glass substrate now fully, do not need to invest again expensive takeup type production equipment, save a large amount of production equipment acquisition expenses, reduce the production equipment cost.Compare with glass substrate, do not have glass breakage, can improve rate of finished products, after deposition clamp is pulled out from coating chamber, can immediately the modified polyimide substrate be taken out from deposition clamp together with framework and place cooling rapidly under the low environment of temperature, save temperature fall time, enhance productivity.U.S. Pat 5356656 on glass, after non-crystal silicon solar cell completes, during from glass peeling off, causes damage to the flexible substrate preparation to hull cell easily, and the rate that manufactures a finished product is low.
Description of drawings
Fig. 1, be flexible amorphous silicon solar battery structure schematic diagram of the present utility model.Wherein 1 is metal film layer, 2 is the N type amorphous silicon of end battery, 3 is the I type amorphous silicon of end battery, 4 is the P type microcrystal silicon of end battery, 5 is the N type microcrystal silicon of top battery, 6 is the I type amorphous silicon of top battery, 7 is the P type amorphous silicon of top battery, 8 is nesa coating, 9 is the PI substrate of transparent modified polyimides, see Fig. 1 flexible solar battery, being binode lamination amorphous silicon battery structure, is that substrate 1 is nesa coating 2 successively by resistant to elevated temperatures modification transparent flexible PI substrate, the P type amorphous silicon 3 of top battery, the intrinsic amorphous silicon 4 of top battery, the N type microcrystal silicon 5 of top battery, the P type microcrystal silicon 6 of end battery, the intrinsic amorphous silicon 7 of end battery, the N type amorphous silicon 8 of end battery, metal film layer 9 is formed.
The structure of non-crystal silicon solar cell that uses the high molecular polymer substrate of full impregnated light can adopt as an example of single junction cell example: modification transparent substrate PI, nesa coating TCO, P type non-crystalline silicon P+A-Si, intrinsic amorphous silicon Ia-Si, N-type non-crystalline silicon N+The structure of a-Si, metal film AL.
Specific embodiment
The technology of example 1 preparation flexible amorphous silicon solar cell:
(1), by 3,3`-three fluoro dimethyl-4,4` MDA: N, the N-dimethylacetylamide: 2,3,3`, the polyamic acid slurry that the mol ratio prescription of 4`-bibenzene tetracarboxylic dianhydride=0.9: 45: 0.9 makes, through vacuum filtration, adopt silk screen printing or spraying method on the thick corrosion resistant plate of 0.5mm, to make thin film then, put into baking oven and dry: 120 ℃/1h by follow procedure; 170 ℃/1h; 280 ℃/1h; Obtain uniform transparent modified polyimide base film after the 350 ℃/1h. cooling.
(2), be loaded on the modified polyimide substrate on the substrate frame and tighten and even up.The long 1220mm of substrate frame, wide 356mm.
(3), under 350 ℃ of temperature, on the modified polyimide substrate, deposit an aspect resistance 15 Ω/, the ZnO nesa coating of light transmittance 93% with magnetron sputtering method.
(4), laser grooving and scribing ZnO nesa coating
(5), cleaning modified polyimide substrate
(6), will gather pre-baking oven preheating 1.5-2 hour that the acid imide substrate is packed in the deposition clamp and pushed 220 ℃-250 ℃.
(7), preheating is good deposition clamp pushes in the vacuum chamber, at 220 ℃ vacuum chamber temperature deposit P type amorphous silicon 100 , I type amorphous silicon 900 of top battery, I type amorphous silicon 2800 of end battery, N type amorphous silicon 200 of end battery, N type microcrystalline silicon film layer 200 of P type microcrystalline silicon film layer 200 of battery and top battery form tunnel junction at the bottom of 300 ℃ of temperature deposit.
(8), after deposition clamp comes out of the stove, the substrate frame in the deposition clamp and the modified polyimide substrate on it are taken out and under the environment below 20 ℃, carry out fast cooling.
(9), laser grooving and scribing has been deposited on the on-chip amorphous silicon film of modified polyimide, the passage of the adjacent two joint element cell both positive and negative polarities of formation connection.
(10), will be laser carved amorphous silicon film the modified polyimide substrate together with its fixed frame, place aluminum-spraying machine to be coated with the aluminum metal film.
(11), the modified polyimide substrate of plated aluminum metallic film places laser scribing machine that metallic film is delineated metallic film by delineating corresponding position with amorphous silicon together with framework.
(12), will delineate the modified polyimide substrate of metallic film can be to complete flexible amorphous silicon solar cell from unloading fast on the fixed frame.
Example 2
Flexible amorphous silicon solar cell manufacturing step only changes modification PI substrate making prescription, the amorphous silicon membrane depositing temperature in the step 7 and the thickness of each tunic in the step 1 with example 1:
By 3,3`-three fluoro dimethyl-4,4` MDA: N, N-dimethylacetylamide: 2,3,3`, the molar ratio of 4`-bibenzene tetracarboxylic dianhydride=1.0: 47: 1.0 is diamine monomer 3,3`-three fluoro dimethyl-4, and the 4` MDA joins N, in the N-dimethylacetylamide DMAc solution, charge into nitrogen, stir under the room temperature after 5 minutes, begin to add 2,3,3`, 4`-bibenzene tetracarboxylic dianhydride a-BPDA. are under nitrogen protection, and stirring at room was reacted 20 hours. after vacuum defoamation is filtered, obtain water white polyamic acid viscous solution. this solution coat on clean glass plate, is put into baking oven again and dried by follow procedure: 120 ℃/1h; 170 ℃/1h; 280 ℃/1h; Obtain uniform transparent modified PI substrate after the 350 ℃/1h. cooling.
At P type amorphous silicon 120 , I type amorphous silicon 800 of top battery, I type amorphous silicon 3100 of end battery, N type amorphous silicon 150 of end battery of 235 ℃ vacuum chamber temperature deposit top batteries, N type microcrystalline silicon film layer 150 of P type microcrystalline silicon film layer 150 of battery and top battery form tunnel junction at the bottom of 350 ℃ of temperature deposit.
Example 3
Flexible amorphous silicon solar cell manufacturing step only changes the ZnO electrically conducting transparent film deposition temperature in the step 3 with example 1, and microcrystalline silicon film depositing temperature in the step 7:
On modification PI substrate, depositing an aspect resistance 14 Ω/, the ZnO nesa coating of light transmittance 90% with magnetron sputtering method under 370 ℃ of temperature.
N type microcrystalline silicon film layer 200 of P type microcrystalline silicon film layer 200 of battery and top battery form tunnel junction at the bottom of 400 ℃ of temperature deposit.
Example 4
Flexible amorphous silicon solar cell manufacturing step is with example 1, and the modification PI substrate that changes in the step 1 is made prescription, and the ZnO electrically conducting transparent film deposition temperature in the step 3:
By 3,3`-three fluoro dimethyl-4,4` MDA: N; the N-dimethylacetylamide: 2,3,3`; the molar ratio of 4`-bibenzene tetracarboxylic dianhydride=1.1: 50: 1.1 is diamine monomer 3,3`-three fluoro dimethyl-4, and the 4` MDA joins N; in the N-dimethylacetylamide DMAc solution, charge into nitrogen, stir under the room temperature after 5 minutes; begin to add 2,3,3`; 4`-bibenzene tetracarboxylic dianhydride a-BPDA, under nitrogen protection, stirring at room reaction 20 hours.Vacuum defoamation obtains water white polyamic acid viscous solution after filtering.This solution coat on clean corrosion resistant plate, is put into baking oven again and dried by follow procedure: 120 ℃/1h; 170 ℃/1h; 280 ℃/1h; 350 ℃/1h.Obtain uniform transparent modified PI substrate after the cooling.
On modification PI substrate, depositing an aspect resistance 13 Ω/, the ZnO nesa coating of light transmittance 92% with magnetron sputtering method under 400 ℃ of temperature.
Example 5
Flexible amorphous silicon solar cell manufacturing step changes amorphous silicon and microcrystalline silicon film depositing temperature in the step 7 with example 1:
The deposition clamp that preheating is good pushes in the vacuum chamber, at P type amorphous silicon 70 , I type amorphous silicon 700 of top battery, I type amorphous silicon 3500 of end battery, N type amorphous silicon 250 of end battery of 250 ℃ vacuum chamber temperature deposit top batteries, N type microcrystalline silicon film layer 250 of P type microcrystalline silicon film layer 250 of battery and top battery form tunnel junction at the bottom of 350 ℃ of temperature deposit.
Claims (9)
1. flexible solar battery, with the high molecular polymer is the amorphous silicon membrane battery of substrate, it is characterized in that with modified polyimide PI transparent substrate being the fexible film amorphous silicon battery of substrate, be included in P type amorphous silicon layer, I intrinsic layer, N type amorphous silicon membrane layer on the nesa coating of PI substrate, comprise that also layer of metal Al film constitutes the flexible amorphous silicon solar cell.
2. a kind of flexible solar battery according to claim 1 is characterized in that the on-chip amorphous silicon membrane layer of described PI is made of the stack of a plurality of PIN knot, and said PIN knot can be homojunction or heterojunction.
3. a kind of flexible solar battery according to claim 1 is characterized in that said thin film amorphous silicon battery is a unijunction, is that the PI substrate with flexible and transparent is a substrate, thereon sequential cascade nesa coating, P type amorphous silicon P
+A-Si, I intrinsic amorphous silicon Ia-Si, N type amorphous silicon N
+A-Si and metal A l film.
4. a kind of flexible solar battery according to claim 1, the polyimide base film that it is characterized in that said modification be a kind of in 350 ℃-400 ℃ temperature range 4 hours indeformable, light transmittance is 90%～93% PI substrate.
5. a kind of flexible solar battery according to claim 1 is characterized in that said PI substrate is a kind of flexible base, board that is formed by polyamic acid slurry silk screen printing or spraying on the thick corrosion resistant plate of 0.5mm.
6. a kind of flexible solar battery according to claim 1 is characterized in that the on-chip nesa coating of said PI is SnO at least
2A kind of among the/ITO/ZnO.
7. a kind of flexible solar battery according to claim 3 is characterized in that P type amorphous silicon membrane layer 70 -120 , I type amorphous silicon membrane layer 700 -900 , N type amorphous silicon 150 -250 of said unijunction.
8. a kind of flexible solar battery according to claim 1 is characterized in that between the N type microcrystalline silicon film layer of saturating layer polycrystal silicon film of said PI and top battery a tunnel junction being arranged.
9. a kind of flexible solar battery according to claim 8, it is characterized in that PIN is two homojunctions on the said PI transparent substrate, I type amorphous silicon membrane layer 700 -900 of vacuum moulding machine P type amorphous silicon membrane layer top battery 70 -120 , top battery, N type microcrystalline silicon film layer 150 -250 of top battery, P type microcrystalline silicon film layer 150 -250 , I type amorphous silicon membrane layer 2800 -3500 of end battery, N type amorphous silicon 150 -250 of end battery.
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| CNU2007201181546U CN201038178Y (en) | 2007-01-23 | 2007-01-23 | Flexible solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100568541C (en) * | 2007-01-23 | 2009-12-09 | 李毅 | A kind of flexible solar battery and manufacture method |
| CN101257056B (en) * | 2008-04-07 | 2010-06-16 | 南开大学 | Flexible substrate silicon based thin film solar battery |
| CN101777593B (en) * | 2010-01-20 | 2011-06-29 | 景德镇陶瓷学院 | Non-crystalline/micro-crystalline silicon laminated solar battery with middle layer doping structure and manufacture method thereof |
| CN101714583B (en) * | 2009-10-30 | 2012-02-15 | 浙江正泰太阳能科技有限公司 | Flexible thin film solar cell and preparation method thereof |
| CN102668155A (en) * | 2009-10-30 | 2012-09-12 | 住友化学株式会社 | Organic thin film solar cell and method for manufacturing same |
| CN102694038A (en) * | 2012-01-16 | 2012-09-26 | 上海理工大学 | Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof |
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2007
- 2007-01-23 CN CNU2007201181546U patent/CN201038178Y/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100568541C (en) * | 2007-01-23 | 2009-12-09 | 李毅 | A kind of flexible solar battery and manufacture method |
| CN101257056B (en) * | 2008-04-07 | 2010-06-16 | 南开大学 | Flexible substrate silicon based thin film solar battery |
| CN101714583B (en) * | 2009-10-30 | 2012-02-15 | 浙江正泰太阳能科技有限公司 | Flexible thin film solar cell and preparation method thereof |
| CN102668155A (en) * | 2009-10-30 | 2012-09-12 | 住友化学株式会社 | Organic thin film solar cell and method for manufacturing same |
| CN102668155B (en) * | 2009-10-30 | 2015-01-28 | 住友化学株式会社 | Organic thin film solar cell and method for manufacturing same |
| CN101777593B (en) * | 2010-01-20 | 2011-06-29 | 景德镇陶瓷学院 | Non-crystalline/micro-crystalline silicon laminated solar battery with middle layer doping structure and manufacture method thereof |
| CN102694038A (en) * | 2012-01-16 | 2012-09-26 | 上海理工大学 | Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof |
| CN102694038B (en) * | 2012-01-16 | 2014-12-24 | 上海理工大学 | Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof |
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