CN103872154A - Molybdenum film containing sodium and preparation method and application thereof - Google Patents
Molybdenum film containing sodium and preparation method and application thereof Download PDFInfo
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- CN103872154A CN103872154A CN201410123303.2A CN201410123303A CN103872154A CN 103872154 A CN103872154 A CN 103872154A CN 201410123303 A CN201410123303 A CN 201410123303A CN 103872154 A CN103872154 A CN 103872154A
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- molybdenum
- containing sodium
- molybdenum layer
- sodium
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- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 54
- 239000011733 molybdenum Substances 0.000 title claims abstract description 54
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000011734 sodium Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 title abstract description 19
- 229910052708 sodium Inorganic materials 0.000 title abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 4
- 239000010935 stainless steel Substances 0.000 claims abstract description 4
- QMXBEONRRWKBHZ-UHFFFAOYSA-N [Na][Mo] Chemical compound [Na][Mo] QMXBEONRRWKBHZ-UHFFFAOYSA-N 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 6
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 30
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000010276 construction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 150000002751 molybdenum Chemical class 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000004064 recycling Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a molybdenum film containing sodium and a preparation method and application of the molybdenum film containing sodium. The molybdenum film containing sodium sequentially comprises a first pure-molybdenum layer, a molybdenum layer containing sodium, a second pure-molybdenum layer and a substrate from top to bottom, wherein the first pure-molybdenum layer is 10 nanometers to 1 micron thick, the molybdenum layer containing sodium is 10 nanometers to 1 micron thick, the second pure-molybdenum layer is 100 nanometers to 2 microns thick, the sodium content of the molybdenum layer containing sodium ranges from 1% [at] to 20% [at], the molybdenum content of the molybdenum layer containing sodium ranges from 80% [at] to 99% [at], and the molybdenum content of each pure-molybdenum layer ranges from 99.9% [at] to 99.9999% [at]. Compared with the prior art, the adhesion, the electrical conductivity and other respects of the molybdenum film containing sodium meet the requirements of a copper indium gallium selenide film solar cell, and the molybdenum film containing sodium can be used for manufacturing of the high-quality copper indium gallium selenide film solar cell. By the adoption of the preparation method of the molybdenum film containing sodium, the sodium-doped molybdenum film containing an appropriate amount of sodium can be prepared, and it is guaranteed that the positive influence of the doping amount of sodium on the efficiency of the copper indium gallium selenide film solar cell is maximized relatively. The prepared molybdenum film containing sodium is wide in application range and can be prepared based on common substrates of the copper indium gallium selenide film solar cell made of glass or PI or stainless steel or ceramic or the like.
Description
Technical field
The present invention is specifically related to a kind of containing sodium molybdenum film and its preparation method and application.
Background technology
After entering 21 century, human society is faced with severeer Energy situation, day by day reduce taking oil, coal as traditional fossil energy reserves of representative, and the problems such as the environmental pollution that it brings are day by day serious, requiring of human society searching safety, clean, efficient alternative energy source is extremely urgent.In the middle of all kinds of new forms of energy of high speed development, solar energy is safe, pollution-free, inexhaustible with it, be not subject to the advantages such as regional limits, become a member important in New Energy Industry, and certainly will will become in the near future in the mankind's energy domain irreplaceable one.
Wherein, Copper Indium Gallium Selenide (CIGS) solar cell has multinomial advantage, and as high in efficiency, good stability, cost be lower, can development space large etc., exists vast potential for future development.The present conversion efficiency of CIGS solar cell in laboratory has exceeded 20%, and in the making of device that obtains world record, sodium has been played the part of vital role.Conventionally, it is on glass that high efficiency CIGS battery sputters at SLG, under high growth temperature (approximately 600 DEG C), sodium is diffused in CIGS film by molybdenum back electrode from glass, this makes the efficiency of solar cell depend on to a great extent the quality of molybdenum back electrode, but molybdenum back electrode of the prior art cannot meet such demand.
Summary of the invention
The object of the invention is to overcome prior art defect, provide a kind of containing sodium molybdenum film.
Another object of the present invention is to provide the above-mentioned preparation method containing sodium molybdenum film.
A further object of the present invention is to provide the above-mentioned application containing sodium molybdenum film.
Concrete technical scheme of the present invention is as follows:
A kind of containing sodium molybdenum film, should containing sodium molybdenum film comprise successively from top to bottom the first pure molybdenum layer, 10nm-1um that 10nm-1um is thick thick containing sodium molybdenum layer, the second pure molybdenum layer and substrate that 100nm-2um is thick, wherein contain the Na content 1-20%[at of sodium molybdenum layer], Mo content 80-99%[at], the molybdenum content of the first pure molybdenum layer and the second pure molybdenum layer is 99.9-99.9999%[at].
In a preferred embodiment of the invention, comprise successively from top to bottom the first pure molybdenum layer, 80nm that 100nm is thick thick containing sodium molybdenum layer, the second pure molybdenum layer and substrate that 800nm is thick.
In a preferred embodiment of the invention, the material of described substrate is glass, PI, stainless steel or pottery.
An above-mentioned preparation method containing sodium molybdenum film, comprises the steps:
(1) in described substrate, prepare described the first pure molybdenum layer with direct current magnetron sputtering process;
(2) on described the first pure molybdenum layer, prepare the described sodium molybdenum layer that contains with direct current magnetron sputtering process;
(3) prepare described second pure molybdenum layer described containing on sodium molybdenum layer with direct current magnetron sputtering process.
A kind of above-mentioned sodium molybdenum film that contains is in the application of preparing in copper indium gallium selenium solar cell.
The invention has the beneficial effects as follows:
1, compared with prior art, the present invention meets the requirement of copper-indium-galliun-selenium film solar cell at the aspect such as adhesiveness, conductivity containing sodium molybdenum film, can be for the preparation of the copper-indium-galliun-selenium film solar cell of high-quality;
2, the present invention can prepare contain appropriate sodium element mix sodium molybdenum film, the positive influences of the efficiency of the incorporation that ensures sodium element to copper indium gallium selenium solar cell maximize relatively;
What 3, prepared by the present invention is applied widely containing sodium molybdenum film, can be prepared based on conventional substrates of copper-indium-galliun-selenium film solar cell such as glass, PI, stainless steel or potteries.
Brief description of the drawings
Fig. 1 is the I-V characteristic curve of the copper indium gallium selenium solar cell prepared of embodiment 1;
Fig. 2 is the X-ray diffraction result figure of the CIGS thin-film prepared of embodiment 2;
Fig. 3 is the surperficial stereoscan photograph of the CIGS thin-film prepared of embodiment 2;
Fig. 4 is the stereoscan photograph of the cross section of the CIGS thin-film prepared of embodiment 2.
Embodiment
By reference to the accompanying drawings technical scheme of the present invention is further detailed and is described by embodiment below.
Embodiment 1
Utilize direct current magnetron sputtering process, the thick pure molybdenum film of sputter one deck 800nm in substrate of glass, sputter molybdenum target material Mo used content is 99.95%[at], target diameter 50.8mm, thickness 3.175mm, this molybdenum film adopts laminated construction, and the sputtering power of employing is 180W, under sputtering pressure 8mTorr condition, deposit 4min, under 5mTorr condition, deposit 36min; What recycling Deposited By Dc Magnetron Sputtering one deck 80nm was thick contains sodium molybdenum film, and the sodium molybdenum target material of mixing of employing is Na content 10%[at], Mo content 90%[at], target diameter 50.8mm, thickness 6.35mm, the sputtering power of employing is 100W, sputtering pressure is 100W, sputtering time 10min; The thick pure molybdenum film of sputter one deck 100nm again, sputter molybdenum target material Mo used content is 99.95%[at], target diameter 50.8mm, thickness 3.175mm, this molybdenum film adopts laminated construction, and the sputtering power of employing is 180W, under sputtering pressure 5mTorr condition, deposits 5min.Utilize above step to obtain containing sodium molybdenum film, again containing selenizing legal system after using on sodium molybdenum film for CuInGaSe absorbed layer, immersion method is prepared cadmium sulfide resilient coating, radio-frequency magnetron sputter method making ZnO Window layer, direct current magnetron sputtering process is prepared gate electrode, obtains copper indium gallium selenium solar cell.
Obtain the I-V characteristic curve (as shown in Figure 1) of battery by mensuration, calculate the efficiency of solar cell, and adopt pure molybdenum electrode with compared with the copper indium gallium selenium solar cell of batch preparation, improved efficiency 16.5%.
Embodiment 2
Utilize direct current magnetron sputtering process, the thick pure molybdenum film of sputter one deck 800nm in substrate of glass, this molybdenum film adopts laminated construction, and the sputtering power of employing is 180W, under sputtering pressure 8mTorr condition, deposits 4min, under 5mTorr condition, deposits 36min; What recycling Deposited By Dc Magnetron Sputtering one deck 80nm was thick contains sodium molybdenum film, and the sodium molybdenum target material of mixing of employing is Na content 10%[at], Mo content 90%[at], the sputtering power of employing is 100W, sputtering pressure is 100W, sputtering time 10min; The thick pure molybdenum film of sputter one deck 100nm again, this molybdenum film adopts laminated construction, and the sputtering power of employing is 180W, under sputtering pressure 5mTorr condition, deposits 5min, obtains containing sodium molybdenum film.Using magnetron sputtering method to prepare CuGa/In preformed layer structure containing on sodium molybdenum film again, the selenizing of recycling annealing furnace, obtains CIGS thin-film.
By using X-ray diffraction (XRD) to analyze its crystal structure, as crystalline qualities (as shown in Figure 2) such as crystal formation, crystal orientation, the suffered stress of crystal grain.Scanning electron microscopy (SEM) is observed their surface and cross section (as shown in Figure 3 and Figure 4).
The above, be only preferred embodiment of the present invention, therefore can not limit according to this scope of the invention process, the equivalence done according to the scope of the claims of the present invention and description changes and modifies, and all should still belong in the scope that the present invention contains.
Claims (5)
1. one kind contains sodium molybdenum film, it is characterized in that: should containing sodium molybdenum film comprise successively from top to bottom the first pure molybdenum layer, 10nm-1um that 10nm-1um is thick thick containing sodium molybdenum layer, the second pure molybdenum layer and substrate that 100nm-2um is thick, wherein contain the Na content 1-20%[at of sodium molybdenum layer], Mo content 80-99%[at], the molybdenum content of the first pure molybdenum layer and the second pure molybdenum layer is 99.9-99.9999%[at].
2. one as claimed in claim 1 containing sodium molybdenum film, is characterized in that: comprise successively from top to bottom the first pure molybdenum layer, 80nm that 100nm is thick thick containing sodium molybdenum layer, the second pure molybdenum layer and substrate that 800nm is thick.
3. one as claimed in claim 1 or 2, containing sodium molybdenum film, is characterized in that: the material of described substrate is glass, PI, stainless steel or pottery.
4. the preparation method containing sodium molybdenum film described in arbitrary claim in claims 1 to 3, is characterized in that: comprise the steps:
(1) in described substrate, prepare described the first pure molybdenum layer with direct current magnetron sputtering process;
(2) on described the first pure molybdenum layer, prepare the described sodium molybdenum layer that contains with direct current magnetron sputtering process;
(3) prepare described second pure molybdenum layer described containing on sodium molybdenum layer with direct current magnetron sputtering process.
In a claims 1 to 3 described in arbitrary claim containing sodium molybdenum film in the application of preparing in copper indium gallium selenium solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410123303.2A CN103872154B (en) | 2014-03-28 | 2014-03-28 | A kind of containing sodium molybdenum film and its preparation method and application |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410123303.2A CN103872154B (en) | 2014-03-28 | 2014-03-28 | A kind of containing sodium molybdenum film and its preparation method and application |
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| Publication Number | Publication Date |
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| CN103872154A true CN103872154A (en) | 2014-06-18 |
| CN103872154B CN103872154B (en) | 2016-08-17 |
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| CN201410123303.2A Expired - Fee Related CN103872154B (en) | 2014-03-28 | 2014-03-28 | A kind of containing sodium molybdenum film and its preparation method and application |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558628A (en) * | 2015-09-30 | 2017-04-05 | 常德汉能薄膜太阳能科技有限公司 | A kind of preparation method of CIGS thin film window layer of solar battery |
| CN108914070A (en) * | 2018-06-08 | 2018-11-30 | 研创应用材料（赣州）股份有限公司 | A kind of CIGS titanium electrode aluminium alloy compound target material and preparation method thereof |
| CN110079767A (en) * | 2019-04-26 | 2019-08-02 | 潮州市亿加光电科技有限公司 | Target, back electrode layer preparation method and the CIGS solar battery of doping metals Na |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859812A (en) * | 2010-04-30 | 2010-10-13 | 浙江大学 | Method for preparing flexible copper indium gallium selenide thin-film solar cell |
| EP2693496A1 (en) * | 2012-03-12 | 2014-02-05 | Korea Institute of Energy Research | Method for manufacturing cigs thin-film solar cells using substrates not containing na, and solar cell manufactured thereby |
-
2014
- 2014-03-28 CN CN201410123303.2A patent/CN103872154B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859812A (en) * | 2010-04-30 | 2010-10-13 | 浙江大学 | Method for preparing flexible copper indium gallium selenide thin-film solar cell |
| EP2693496A1 (en) * | 2012-03-12 | 2014-02-05 | Korea Institute of Energy Research | Method for manufacturing cigs thin-film solar cells using substrates not containing na, and solar cell manufactured thereby |
Non-Patent Citations (1)
| Title |
|---|
| LORELLE M.MANSFIELD ET AL.: "sodium-doped molybdenum targets for controllable sodium incorporation in CIGS solar cells", 《37TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558628A (en) * | 2015-09-30 | 2017-04-05 | 常德汉能薄膜太阳能科技有限公司 | A kind of preparation method of CIGS thin film window layer of solar battery |
| CN108914070A (en) * | 2018-06-08 | 2018-11-30 | 研创应用材料（赣州）股份有限公司 | A kind of CIGS titanium electrode aluminium alloy compound target material and preparation method thereof |
| CN110079767A (en) * | 2019-04-26 | 2019-08-02 | 潮州市亿加光电科技有限公司 | Target, back electrode layer preparation method and the CIGS solar battery of doping metals Na |
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| CN103872154B (en) | 2016-08-17 |
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