CN102254999A - Method for manufacturing solar cell - Google Patents
Method for manufacturing solar cell Download PDFInfo
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- CN102254999A CN102254999A CN2011102169434A CN201110216943A CN102254999A CN 102254999 A CN102254999 A CN 102254999A CN 2011102169434 A CN2011102169434 A CN 2011102169434A CN 201110216943 A CN201110216943 A CN 201110216943A CN 102254999 A CN102254999 A CN 102254999A
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- Prior art keywords
- indium gallium
- copper indium
- gallium selenide
- solar cell
- crystallizing layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 33
- 239000000126 substance Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 12
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 85
- 238000000576 coating method Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 32
- 238000003701 mechanical milling Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 13
- 238000000469 dry deposition Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000007517 polishing process Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 5
- 238000000224 chemical solution deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method of a solar cell, which comprises the following steps. First, a substrate is provided, and a base electrode is formed on the substrate. And forming a CIGS crystal layer on the substrate electrode. And then, carrying out a chemical mechanical polishing process on the surface of the CIGS crystal layer to flatten the surface of the CIGS crystal layer. And forming a buffer layer on the surface of the planarized CIGS crystal layer. Then, a transparent conductive layer is formed on the buffer layer. Therefore, the manufacturing method of the solar cell is beneficial to mass production, and the manufactured solar cell has better element characteristics.
Description
Technical field
The present invention relates to a kind of manufacture method of solar cell, and relate in particular to the manufacture method of a kind of Copper Indium Gallium Selenide (CIGS) type solar cell.
Background technology
Solar energy is a kind of inexhaustible energy of the clean pollution-free and usefulness not to the utmost of getting, and when solving pollution that present fossil energy faced and problem of shortage, is the focus that attracts most attention always.In numerous solar photoelectric technology, compared to the silicon wafer solar cell, Copper Indium Gallium Selenide (Copper Indium Gallium Diselenide, CIGS) the type solar cell only needs the silicon raw material of very small portion, and conversion efficiency can reach 20%, and the energy of Xiao Haoing is half of traditional silica-based solar cell in process of production, so Copper Indium Gallium Selenide (Copper Indium Gallium Diselenide, CIGS) the type solar cell possesses advantages such as high-photoelectric transformation efficiency and low cost, payes attention to and be subjected to market.
In known Copper Indium Gallium Selenide type solar cell, the vacuum technology technology that forms Copper Indium Gallium Selenide comprises common evaporation (Co-evaporation), selenizing (Selenization), sputter (Sputtering) etc.Fig. 1 illustrates the structural representation of Copper Indium Gallium Selenide layer and resilient coating in known a kind of Copper Indium Gallium Selenide type solar cell.Please refer to Fig. 1, the Copper Indium Gallium Selenide layer 110 in the Copper Indium Gallium Selenide type solar cell 100 for example is that the vacuum technology with selenizing is made, and as shown in Figure 1, Copper Indium Gallium Selenide layer 110 rough surface of crystallization cause making resilient coating 120 thereon film forming smoothly.
Can't be for fear of aforementioned resilient coating in the smooth film forming in Copper Indium Gallium Selenide layer 110 surface, resilient coating 120 must use chemical bath deposition method (Chemical Bath Deposition) to be made.Yet chemical bath deposition method belongs to wet process, is unfavorable for volume production.In addition, because the energy gap on the surface of known Copper Indium Gallium Selenide layer 110 is lower, cause the open circuit voltage (Voc) of known Copper Indium Gallium Selenide type solar cell 100 low.
Summary of the invention
The invention provides a kind of manufacture method of solar cell, it helps producing the preferable light absorbing zone of element characteristic.
The present invention proposes a kind of manufacture method of solar cell, and it comprises the following steps.At first, provide a substrate, and on substrate, form a basal electrode.Then, on basal electrode, form a Copper Indium Gallium Selenide crystallizing layer.Afterwards, a chemical mechanical milling tech is carried out on the surface of Copper Indium Gallium Selenide crystallizing layer, with the surface of planarization Copper Indium Gallium Selenide crystallizing layer.Continue it, on the Copper Indium Gallium Selenide crystallizing layer surface of planarization, form a resilient coating.Then.On resilient coating, form a transparency conducting layer.
In one embodiment of this invention, the thickness deviation of aforesaid Copper Indium Gallium Selenide crystallizing layer behind chemical mechanical milling tech is less than 0.1 micron.。
In one embodiment of this invention, the surperficial energy gap of aforesaid Copper Indium Gallium Selenide crystallizing layer behind chemical mechanical milling tech is more than or equal to 1.3eV.
In one embodiment of this invention, aforesaid Copper Indium Gallium Selenide crystallizing layer through the energy gap behind the chemical mechanical milling tech in fact between between the 1.3eV to 1.68eV.
In one embodiment of this invention, aforesaid Copper Indium Gallium Selenide crystallizing layer through the thickness behind the chemical mechanical milling tech between 1.5 microns to 2.5 microns.
In one embodiment of this invention, the method for aforesaid formation resilient coating is dry deposition (dry deposition).For example, the dry deposition method of formation resilient coating comprises chemical vapour deposition (CVD) or physical vapour deposition (PVD).
In one embodiment of this invention, aforesaid Copper Indium Gallium Selenide crystallizing layer is a P type semiconductor, and resilient coating is a N type semiconductor.
In one embodiment of this invention, the material of aforesaid resilient coating comprises cadmium sulfide (CdS), and the material of basal electrode comprises molybdenum, titanium, tungsten or aluminium.
In one embodiment of this invention, the material of aforesaid transparency conducting layer comprises zinc oxide (ZnO), aluminum zinc oxide (AZO) or indium tin oxide transparent oxide layers such as (ITO).
Based on above-mentioned, because the manufacture method of solar cell of the present invention is after forming the Copper Indium Gallium Selenide crystallizing layer, a chemical mechanical milling tech is carried out on surface to the Copper Indium Gallium Selenide crystallizing layer, therefore the surface of Copper Indium Gallium Selenide crystallizing layer can be flattened, whereby, can allow be formed at the lip-deep resilient coating of Copper Indium Gallium Selenide crystallizing layer film forming successfully, help volume production.In addition, the Copper Indium Gallium Selenide crystallizing layer is behind chemical mechanical milling tech, and its surface has higher energy gap, so solar cell has higher open circuit voltage, thereby shows preferable element characteristic.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 illustrates the structural representation of Copper Indium Gallium Selenide layer and resilient coating in existing a kind of Copper Indium Gallium Selenide type solar cell.
Fig. 2 A to Fig. 2 F is the schematic flow sheet of a kind of manufacture method of solar cell in one embodiment of the invention.
Fig. 3 further illustrates the structure chart of Copper Indium Gallium Selenide crystallizing layer under sweep electron microscope in one embodiment of the invention.
Fig. 4 is that the degree of depth and the energy gap of Copper Indium Gallium Selenide crystallizing layer concerns schematic diagram in the solar cell of Fig. 2 F.
Wherein, Reference numeral:
210: substrate
220: basal electrode
110,230: the Copper Indium Gallium Selenide crystallizing layer
120,240: resilient coating
250: grinding pad
260: transparency conducting layer
CB: conduction band can rank
Eg1, Eg2: energy gap
VB: valence band can rank
P, Q: the degree of depth
Embodiment
Fig. 2 A to Fig. 2 F is the schematic flow sheet of a kind of manufacture method of solar cell in one embodiment of the invention.
Please refer to Fig. 2 A, a substrate 210 is provided earlier, and on substrate 210, form a basal electrode 220.In the present embodiment, substrate 210 for example is glass, metal substrate (as the Stainless Steel plate), polymeric membrane (as plastics) or other material that is fit to, the present invention is not limited, and the material of basal electrode 220 comprises and is beneficial to hole-conductive in order to the back electrode as solar cell by metallic conductors such as molybdenum, titanium, tungsten or aluminium.
Then, please refer to Fig. 2 B, on basal electrode 220, form a Copper Indium Gallium Selenide crystallizing layer 230, with as light absorbing zone.The mode that forms Copper Indium Gallium Selenide crystallizing layer 230 can be as being total to evaporation (Co-evaporation), selenizing (Selenization) or sputter (Sputtering) equal vacuum coating technique, also can be to spray pyrolysismethod (Chemical spray Pyrolysis), electro-deposition adopting non-vacuum process technology such as (Electrodeposition) as coating process (Coating Process), chemistry.The film forming thickness of the Copper Indium Gallium Selenide crystallizing layer 230 of present embodiment for example is essentially 3 microns to 3.5 microns.In addition, shown in the enlarged drawing of Fig. 2 B, formed Copper Indium Gallium Selenide crystallizing layer 230 has the surface that crystal grain links on basal electrode 220, its surface roughness is higher, particularly, the arithmetic average roughness Ra on Copper Indium Gallium Selenide crystallizing layer 230 surfaces of present embodiment is about 0.3 micron to 0.4 micron.
Specifically, please refer to Fig. 2 C and Fig. 2 D, before forming resilient coating 240, earlier a chemical mechanical milling tech is carried out on the surface of Copper Indium Gallium Selenide crystallizing layer 230, with the surface of planarization Copper Indium Gallium Selenide crystallizing layer 230.Specifically, the chemical mechanical milling tech of present embodiment is to have CeO by supply
2, SiO
2Or the lapping liquid of other suitable material is in 230 of grinding pad 250 and Copper Indium Gallium Selenide crystallizing layers, and Copper Indium Gallium Selenide crystallizing layer 230 applied a pressure so that it is pressed on the grinding pad 250, allow and carry out relative motion between Copper Indium Gallium Selenide crystallizing layer 230 and the grinding pad 250 each other.Under the chemical action by mechanical friction that relative motion produced and lapping liquid, remove the bigger top layer of roughness in the Copper Indium Gallium Selenide crystallizing layer 230, make its surface smooth gradually, reach the purpose of planarization, the thickness of Copper Indium Gallium Selenide crystallizing layer 230 is much smaller than grinding pad 250, and Fig. 2 C only is a schematic diagram.Shown in Fig. 2 D, the surface of the Copper Indium Gallium Selenide crystallizing layer 230 of present embodiment is after chemical mechanical milling tech grinds, the reduced down in thickness of Copper Indium Gallium Selenide crystallizing layer 230 is in fact between 1.5 microns to 2.5 microns, and its arithmetic average roughness Ra is in fact near 0 micron.When estimating the surface flatness of Copper Indium Gallium Selenide crystallizing layer 230 behind chemical mechanical milling tech with different method for measurement, the uniform film thickness degree of Copper Indium Gallium Selenide crystallizing layer 230 behind chemical mechanical milling tech is less than 10%, and thickness deviation (thickness derivation) is less than 0.1 micron.
Please refer to Fig. 2 E, go up in Copper Indium Gallium Selenide crystallizing layer 230 surfaces of planarization and form a resilient coating 240.Because handle through chemical mechanical milling tech earlier on the surface of Copper Indium Gallium Selenide crystallizing layer 230, therefore when resilient coating 240 was formed on the planarized surface of Copper Indium Gallium Selenide crystallizing layer 230, successfully film forming can not produce the discontinuous defective of rete.Therefore, the technology that forms resilient coating 240 can be extensively with the coating process than suitable volume production, can be subject to the wet type depositing operation of existing chemical bath deposition method, in other words, the resilient coating 240 of present embodiment can also utilize the mode of dry deposition (dry deposition) to make, therefore help volume production, the dry deposition method that wherein forms resilient coating 240 can be enumerated chemical vapour deposition (CVD) or physical vapour deposition (PVD) etc.The material of resilient coating 240 can be selected suitable material for use, and for instance, the material of the resilient coating 240 of present embodiment comprises cadmium sulfide (CdS), zinc sulphide (ZnS), therefore in the present embodiment, Copper Indium Gallium Selenide crystallizing layer 230 is a P type semiconductor, and resilient coating 240 is a N type semiconductor.
Please refer to Fig. 2 F, on resilient coating 240, form a transparency conducting layer 260.Transparency conducting layer 260 possesses the high-penetration degree, and lowering the absorption of sunlight, and transparency conducting layer 260 can allow sunlight penetrate to be incident on resilient coating 240 and the Copper Indium Gallium Selenide crystallizing layer 230, is electric energy with transform light energy whereby.The material of transparency conducting layer 260 can be that (Transparent Conducting Oxide, TCO), for example, transparent conductive oxide comprises indium tin oxide (ITO), zinc oxide (ZnO) or aluminum zinc oxide (AZO) etc. to transparent conductive oxide.
In order to clearly demonstrate the structure of Copper Indium Gallium Selenide crystallizing layer 230 of the present invention before and after chemical mechanical milling tech, Fig. 3 further illustrates the structure chart of Copper Indium Gallium Selenide crystallizing layer under sweep electron microscope in one embodiment of the invention.Please refer to Fig. 3, in the present embodiment, the thickness after Copper Indium Gallium Selenide crystallizing layer 230 forms is about 3 microns to 3.5 microns, and its surface has the roughness of certain degree, therefore is unfavorable for making in its surface resilient coating 240 to form continuous films.As shown in Figure 3, utilize chemical mechanical milling tech to come the top layer of Copper Indium Gallium Selenide crystallizing layer 230 is ground, to remove the part Copper Indium Gallium Selenide crystallizing layer 230 of degree of depth P, come the surface of planarization Copper Indium Gallium Selenide crystallizing layer 230 whereby, as described above, its Copper Indium Gallium Selenide crystallizing layer 230 behind cmp its thickness deviation (thickness derivation) for example less than 0.1 micron, uniform film thickness degree for example less than 10%, arithmetic average roughness Ra is for example in fact near 0 micron.
Fig. 4 is that the degree of depth and the energy gap of Copper Indium Gallium Selenide crystallizing layer concerns schematic diagram in the solar cell of Fig. 2 F, and making the surface of Copper Indium Gallium Selenide crystallizing layer 230 contiguous resilient coatings 240 in Fig. 4 is depth zero, and the direction of the past more basal electrode 220 then degree of depth increases.Please refer to Fig. 4, the energy gap of Copper Indium Gallium Selenide crystallizing layer 230 is the difference between conduction band energy rank CB and the valence band energy rank VB, and as shown in Figure 4, before cmp, the surperficial energy gap Eg1 of Copper Indium Gallium Selenide crystallizing layer 230 is about 1.04eV in fact.Behind the part Copper Indium Gallium Selenide crystallizing layer 230 that removes degree of depth P with chemical mechanical milling tech, the surperficial energy gap of the Copper Indium Gallium Selenide crystallizing layer 230 that is exposed is essentially more than or equal to 1.3eV.In other words, Copper Indium Gallium Selenide crystallizing layer 230 through the surperficial energy gap Eg2 behind the chemical mechanical milling tech in fact between between the 1.3eV to 1.68eV, and the thickness of Copper Indium Gallium Selenide crystallizing layer 230 behind the chemical mechanical milling tech degree of depth Q that is essentially among Fig. 4 to be indicated.Therefore, Copper Indium Gallium Selenide crystallizing layer 230 is behind chemical mechanical milling tech, and its surface has higher energy gap, so solar cell has higher open circuit voltage, thereby shows preferable element characteristic.
In sum, the manufacture method of solar cell of the present invention is carried out a chemical mechanical milling tech by chemical mechanical milling tech to the surface of Copper Indium Gallium Selenide crystallizing layer, be formed at the lip-deep resilient coating of Copper Indium Gallium Selenide crystallizing layer film forming smoothly to allow, help volume production.In addition, the Copper Indium Gallium Selenide crystallizing layer is behind chemical mechanical milling tech, and its surface has higher energy gap, utilizes the solar cell of this Copper Indium Gallium Selenide crystallizing layer can possess higher open circuit voltage, thereby shows preferable element characteristic.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (10)
1. the manufacture method of a solar cell is characterized in that, comprising:
One substrate is provided, and on this substrate, forms a basal electrode;
On this basal electrode, form a Copper Indium Gallium Selenide crystallizing layer;
A chemical mechanical milling tech is carried out on surface to this Copper Indium Gallium Selenide crystallizing layer, with the surface of this Copper Indium Gallium Selenide crystallizing layer of planarization;
On this Copper Indium Gallium Selenide crystallizing layer surface of planarization, form a resilient coating; And
On this resilient coating, form a transparency conducting layer.
2. according to the manufacture method of the described solar cell of claim 1, it is characterized in that the thickness deviation of this Copper Indium Gallium Selenide crystallizing layer behind this chemical mechanical milling tech is less than 0.1 micron.
3. according to the manufacture method of the described solar cell of claim 1, it is characterized in that the surperficial energy gap of this Copper Indium Gallium Selenide crystallizing layer behind this chemical mechanical milling tech is more than or equal to 1.3eV.
4. according to the manufacture method of the described solar cell of claim 1, it is characterized in that the energy gap of this Copper Indium Gallium Selenide crystallizing layer behind this chemical mechanical milling tech is in fact between between the 1.3eV to 1.68eV.
5. according to the manufacture method of the described solar cell of claim 1, it is characterized in that, this Copper Indium Gallium Selenide crystallizing layer through the thickness behind this chemical mechanical milling tech between 1.5 microns to 2.5 microns.
6. according to the manufacture method of the described solar cell of claim 1, it is characterized in that the method that forms this resilient coating is a dry deposition.
7. according to the manufacture method of the described solar cell of claim 6, it is characterized in that the dry deposition method that forms this resilient coating comprises chemical vapour deposition (CVD) or physical vapour deposition (PVD).
8. according to the manufacture method of the described solar cell of claim 1, it is characterized in that this Copper Indium Gallium Selenide crystallizing layer is a P type semiconductor, and this resilient coating is a N type semiconductor.
9. according to the manufacture method of the described solar cell of claim 1, it is characterized in that the material of this resilient coating comprises cadmium sulfide, zinc sulphide, the material of this basal electrode comprises molybdenum, titanium, tungsten or aluminium.
10. according to the manufacture method of the described solar cell of claim 1, it is characterized in that the material of this transparency conducting layer comprises zinc oxide, aluminum zinc oxide or indium tin oxide.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099146612A TWI531078B (en) | 2010-12-29 | 2010-12-29 | Method of fabricating solar cell |
| TW099146612 | 2010-12-29 |
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| CN102254999A true CN102254999A (en) | 2011-11-23 |
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| CN2011102169434A Pending CN102254999A (en) | 2010-12-29 | 2011-07-22 | Method for manufacturing solar cell |
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| TW (1) | TWI531078B (en) |
Cited By (2)
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| CN103700725A (en) * | 2013-12-27 | 2014-04-02 | 渤海大学 | Preparation method of nano-particle-based copper indium sulphur selenium film for solar battery |
| CN104245572A (en) * | 2012-02-27 | 2014-12-24 | 日本麦可罗尼克斯股份有限公司 | Method for fabricating alloy for CIGS solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI497743B (en) * | 2013-03-01 | 2015-08-21 | Univ Nat Taiwan Ocean | Si solar cell fabrication process incorporating physical removal of oxide layers and teaching application therewith |
| TWI496304B (en) * | 2013-12-12 | 2015-08-11 | Ind Tech Res Inst | Solar cell and method of forming the same and method for forming n-type zns layer |
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| CN104245572A (en) * | 2012-02-27 | 2014-12-24 | 日本麦可罗尼克斯股份有限公司 | Method for fabricating alloy for CIGS solar cell |
| CN104245572B (en) * | 2012-02-27 | 2016-02-17 | 日本麦可罗尼克斯股份有限公司 | The making method of CIGS alloy used for solar batteries |
| CN103700725A (en) * | 2013-12-27 | 2014-04-02 | 渤海大学 | Preparation method of nano-particle-based copper indium sulphur selenium film for solar battery |
| CN103700725B (en) * | 2013-12-27 | 2016-04-20 | 渤海大学 | A kind of preparation method based on nano particle copper indium sulfur-selenium thin film for solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201228007A (en) | 2012-07-01 |
| TWI531078B (en) | 2016-04-21 |
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