CN102694038A - Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof - Google Patents
Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof Download PDFInfo
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- CN102694038A CN102694038A CN2012100130769A CN201210013076A CN102694038A CN 102694038 A CN102694038 A CN 102694038A CN 2012100130769 A CN2012100130769 A CN 2012100130769A CN 201210013076 A CN201210013076 A CN 201210013076A CN 102694038 A CN102694038 A CN 102694038A
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the technical field of solar energy, particularly a solar cell. The amorphous silicon solar cell based on a bifacial metal cladding waveguide structure comprises a solar cell layer, wherein the solar cell layer comprises a substrate layer, an amorphous silicon layer, a conducting film layer and a glass layer, wherein the glass layer, the conducting film layer and the amorphous silicon layer form a waveguide layer; the substrate layer adopts a metal total reflection layer; a metal coupling layer is arranged on the glass layer; and the metal coupling layer, the waveguide layer and the metal total reflection layer form a waveguide structure. The manufacturing method comprises the following steps: 1) preparing the glass layer; 2) preparing the mask; 3) preparing the metal coupling layer; 4) preparing the conducting film layer; 5) preparing the amorphous silicon layer; and 6) preparing the metal total reflection layer. Due to the technical scheme above, the invention has the advantages of wide absorption spectrum, wide spectrum incident angle, high efficiency, strong light trapping effect and the like.
Description
Technical field
The present invention relates to technical field of solar, relate in particular to a kind of solar cell.
Background technology
The main flow of solar cell is monocrystalline silicon and polysilicon at present, accounts for world's solar cell gross annual output amount more than 70%.Yet this type solar cell cost is higher, and the semi-conducting material that is used to produce is limited, receives the restriction of large-scale production.
Therefore; In the whole process from the material to the manufacturing solar cells; To can making continuously and energy-conservation, large tracts of land, thin film solar cell in light weight, can large-scale production produce eager demand, and its representative material is amorphous silicon hydride (a-Si:H).Breadboard D.E.Conlson of U.S. RCA in 1976 and C.R.Wronski Spear form and the basis of control p-n junction work on utilize photogenic voltage (PV) effect to process first a-Si solar cell in the world, opened the tent curtain that a-Si uses in opto-electronic device or PV assembly.At present the high-photoelectric transformation efficiency of a-Si multijunction solar cell has reached 15%.But existing thin film amorphous silicon solar cell has still that the absorption region of incident angle scope and spectrum of spectrum is narrow, problem such as sunken light action is not strong, and photoelectric conversion efficiency is not high.
Summary of the invention
The objective of the invention is to, a kind of non-crystal silicon solar cell based on double-sided metal coating waveguiding structure is provided, to solve the problems of the technologies described above.
Another object of the present invention is to, provide a kind of and coat the manufacturing approach of the non-crystal silicon solar cell of waveguiding structure, to solve the problems of the technologies described above based on double-sided metal.
The technical problem that the present invention solved can adopt following technical scheme to realize:
Coat the non-crystal silicon solar cell of waveguiding structure based on double-sided metal; Comprise a solar cell layer; It is characterized in that; Said solar cell layer comprises a substrate layer, be arranged on amorphous silicon layer on the said substrate layer, be arranged on conductive membrane layer on the said amorphous silicon layer, be arranged on the glassy layer on the said conductive membrane layer, and said glassy layer, said conductive membrane layer and said amorphous silicon layer form a ducting layer;
Said substrate layer adopts a metal total reflection layer;
Also comprise a metal coupling layer, said metal coupling layer is arranged on the said glassy layer;
Said metal coupling layer, said ducting layer and said metal total reflection layer form a waveguiding structure.
Metal coupling layer of the present invention so that increase spectrum incident angle scope and spectral absorption scope, is coupled into optical coupling afferent echo conducting shell in the optical waveguide structure with a large amount of solar energies, increases the utilance of light.Metal total reflection layer of the present invention can effectively reflect light, has further increased the second use of light, plays sunken light action with the metal coupling layer simultaneously.The present invention is from waveguiding structure, with the material of low cost through setting structure make its extremely wide frequency spectrum with in the spectrum incident angle very high absorptivity is arranged greatly.Effectively improved the luminous energy absorption efficiency.
Said waveguiding structure thickness from top to bottom is followed successively by: metal coupling layer 10nm-50nm, glassy layer 0.1mm-5mm, conductive membrane layer 0.5 μ m-3 μ m, amorphous silicon layer 0.5 μ m-2 μ m, metal total reflection layer 0.5 μ m-5 μ m.The present invention still can keep membrane structure, so that carry, transport and install under the prerequisite that improves the luminous energy absorptivity.
Said metal coupling layer is the metal level that a kind of metal material of aluminium, silver, Jin Dengzhong is processed.
Said conductive membrane layer is as top electrode, and said metal total reflection layer is as bottom electrode, and said metal total reflection layer is the metal total reflection layer that aluminium, silver, gold copper-base alloy are processed.
Said amorphous silicon layer comprises P type silicon layer, intrinsic silicon layer and N type silicon layer from top to bottom.
Coat the manufacturing approach of the non-crystal silicon solar cell of waveguiding structure based on double-sided metal, comprise the steps:
1) preparation glassy layer: glass substrate is cleaned;
2) mask: mask is carried out in the edge at glass substrate;
3) preparation metal coupling layer: at the plane of incidence metal-coated membrane of glass substrate;
4) preparation conductive membrane layer: the edge at glass substrate is carried out mask once more;
Preparation ITO layer below glass substrate;
And carry out mask once more in the edge of glass substrate, and the ITO around reserving is as positive electrode;
5) preparation amorphous silicon layer: on the ITO layer, deposit P, I, three layers of amorphous silicon membrane of N;
6) preparation metal total reflection layer: metal-coated membrane on the ITO layer.
The present invention adopts above-mentioned making to take precautions against, and has effectively widened spectral absorption scope and ranges of incidence angles, has increased the absorption efficiency of luminous energy.
Also comprise 7) test and encapsulation: to non-crystal silicon solar cell test, electrical method reparation and annealing; Non-crystal silicon solar cell is encapsulated.
In the step 1), when glass substrate is cleaned, use acetone, ethanol, adopt ultrasonic wave that glass substrate is cleaned, and then dry up, to guarantee the cleaning of glass substrate with nitrogen.
Step 2) during the preparation mask, adopt following mode: a circle is sticked with adhesive tape in the edge at glass substrate, and short circuit is caused by the metal plated layer in the glass substrate side when preventing metal-coated membrane and in the step 4).
Adhesive tape preferably adopts high temperature gummed tape, and the heatproof temperature of high temperature gummed tape is higher than 200 °.
In the step 3), adopt the mode of direct current sputtering silver-plated on glass substrate, aluminium or golden film.
In the step 4), adopt magnetron sputtering to prepare the ITO layer, as top electrode.
In the step 5), using plasma strengthens chemical vapour deposition technique (PECVD) and on the ITO layer, deposits P, I, three layers of amorphous silicon membrane of N.The parametric optimization of plasma enhanced chemical vapor deposition method is following: radio-frequency power is 36W, and power capacity is coupled as 14.12MHz, and the underlayer temperature scope is 200 ℃～250 ℃, and gas aura air pressure range is below 20pa.Amorphous silicon layer is the opto-electronic conversion nucleus.
In the step 6), adopt that magnetron sputtering method is silver-plated on the ITO layer, gold or aluminium film, as bottom electrode.
Beneficial effect: owing to adopt technique scheme, the present invention can increase the absorption region of spectrum and the incident angle scope of spectrum through waveguiding effect.Remarkable advantage such as the present invention has that cost is low, the incident angle of absorbing light spectrum width, spectrum is wide, efficient is high, optical energy loss is low.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is a flow chart of the present invention.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect and be easy to understand and understand, further set forth the present invention below in conjunction with concrete diagram.
With reference to Fig. 1; Coat the non-crystal silicon solar cell of waveguiding structure based on double-sided metal; Comprise a solar cell layer; Solar cell layer comprises a substrate layer, be arranged on amorphous silicon layer 4 on the substrate layer, be arranged on conductive membrane layer 3 on the amorphous silicon layer 4, be arranged on the glassy layer 2 on the conductive membrane layer 3, and glassy layer 2, conductive membrane layer 3 and amorphous silicon layer 4 form a ducting layer.Substrate layer adopts a metal total reflection layer 5.Also comprise a metal coupling layer 1, metal coupling layer 1 is arranged on the glassy layer 2.Metal coupling layer 1, ducting layer and metal total reflection layer 5 form a waveguiding structure.Metal coupling layer 1 of the present invention is optical coupling afferent echo conducting shell, so that light when in ducting layer, transmitting, increases spectrum incident angle scope and spectral absorption scope, a large amount of solar energies is coupled in the optical waveguide structure utilance of increase light.Metal total reflection layer 5 of the present invention can effectively reflect light, has further increased the second use of light, plays sunken light action with the metal coupling layer simultaneously.The present invention is from waveguiding structure, through setting structure it added with the material of low cost: extremely wide frequency spectrum with in the spectrum incident angle very high absorptivity is arranged greatly.Effectively improved luminous energy absorption efficiency and with low cost.
Waveguiding structure thickness from top to bottom is followed successively by: metal coupling layer 1 is that 0.5 μ m-3 μ m, amorphous silicon layer 4 are that 0.5 μ m-2 μ m, metal total reflection layer 5 are 0.5 μ m-5 μ m for 10nm-50nm, glassy layer 2 for 0.1mm-5mm, conductive membrane layer 3.The present invention still can keep membrane structure, so that carry, transport and install under the prerequisite that improves the luminous energy absorptivity.
The metal level that metal coupling layer 1 is processed for a kind of metal material of aluminium, silver, Jin Dengzhong.
Conductive membrane layer 3 is as top electrode, and metal total reflection layer 5 is as bottom electrode, the metal total reflection layer 5 that metal total reflection layer 5 is processed for aluminium, silver, gold copper-base alloy.
Amorphous silicon layer 4 comprises P type silicon layer, intrinsic silicon layer and N type silicon layer from top to bottom.
Coat the manufacturing approach of the non-crystal silicon solar cell of waveguiding structure based on double-sided metal, comprise the steps: the first step, preparation glassy layer 2: glass substrate is cleaned.When glass substrate is cleaned, use acetone, ethanol, adopt ultrasonic wave that glass substrate is cleaned, and then dry up, to guarantee the cleaning of glass substrate with nitrogen.
In second step, mask: a circle is sticked with adhesive tape in the edge at glass substrate, carries out mask.Adhesive tape preferably adopts high temperature gummed tape, and the heatproof temperature of high temperature gummed tape is higher than 200 °.
The 3rd step, preparation metal coupling layer 1: at the plane of incidence metal-coated membrane of glass substrate.During practical implementation, adopt the mode of direct current sputtering silver-plated on glass substrate, aluminium film or golden film.
The 4th step, preparation conductive membrane layer 3: adopt with identical mode of second step and carry out mask once more in the edge of glass substrate.Adopt magnetron sputtering below glass substrate, to prepare the ITO layer then, as top electrode.Carry out mask once more in the edge of glass substrate then, and the ITO around reserving is as positive electrode.
In the 5th step, preparation amorphous silicon layer 4: using plasma strengthens chemical vapour deposition technique (PECVD) and on the ITO layer, deposits P, I, three layers of amorphous silicon membrane of N.The parametric optimization of plasma enhanced chemical vapor deposition method is following: radio-frequency power is 36W, and power capacity is coupled as 14.12MHz, and the underlayer temperature scope is 200 ℃～250 ℃, and gas aura air pressure range is below 20pa.Amorphous silicon layer 4 is the opto-electronic conversion nucleus.
The 6th step, preparation metal total reflection layer 5: adopt magnetron sputtering method metal-coated membrane on the ITO layer.During practical implementation, preferably silver-plated film, aluminium film or golden film on the ITO layer are as bottom electrode.
The 7th step, test and encapsulation: to non-crystal silicon solar cell test, electrical method reparation and annealing.Non-crystal silicon solar cell is encapsulated.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; The present invention is not restricted to the described embodiments; That describes in the foregoing description and the specification just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the present invention also has various changes and modifications, and these variations and improvement all fall in the scope of the invention that requires protection.The present invention requires protection range to be defined by appending claims and equivalent thereof.
Claims (10)
1. coat the non-crystal silicon solar cell of waveguiding structure based on double-sided metal; Comprise a solar cell layer; It is characterized in that; Said solar cell layer comprises a substrate layer, be arranged on amorphous silicon layer on the said substrate layer, be arranged on conductive membrane layer on the said amorphous silicon layer, be arranged on the glassy layer on the said conductive membrane layer, and said glassy layer, said conductive membrane layer and said amorphous silicon layer form a ducting layer;
Said substrate layer adopts a metal total reflection layer;
Also comprise a metal coupling layer, said metal coupling layer is arranged on the said glassy layer;
Said metal coupling layer, said ducting layer and said metal total reflection layer form a waveguiding structure.
2. the non-crystal silicon solar cell that coats waveguiding structure based on double-sided metal according to claim 1; It is characterized in that said waveguiding structure thickness from top to bottom is followed successively by: metal coupling layer 10nm-50nm, glassy layer 0.1mm-5mm, conductive membrane layer 0.5 μ m-3 μ m, amorphous silicon layer 0.5 μ m-2 μ m, metal total reflection layer 0.5 μ m-5 μ m.
3. the non-crystal silicon solar cell based on double-sided metal coating waveguiding structure according to claim 1 and 2 is characterized in that said metal coupling layer is the metal level that a kind of metal material of aluminium, silver, Jin Dengzhong is processed.
4. the non-crystal silicon solar cell that coats waveguiding structure based on double-sided metal according to claim 3; It is characterized in that; Said conductive membrane layer is as top electrode; Said metal total reflection layer is as bottom electrode, and said metal total reflection layer is the metal total reflection layer that a kind of metal material in aluminium, silver, the gold is processed.
5. the non-crystal silicon solar cell based on double-sided metal coating waveguiding structure according to claim 4 is characterized in that said amorphous silicon layer comprises P type silicon layer, intrinsic silicon layer and N type silicon layer from top to bottom.
6. coat the manufacturing approach of the non-crystal silicon solar cell of waveguiding structure based on double-sided metal, it is characterized in that, comprise the steps:
1) preparation glassy layer: glass substrate is cleaned;
2) mask: mask is carried out in the edge at glass substrate;
3) preparation metal coupling layer: at the plane of incidence metal-coated membrane of glass substrate;
4) preparation conductive membrane layer: the edge at glass substrate is carried out mask once more;
Preparation ITO layer below glass substrate;
And carry out mask once more in the edge of glass substrate, and the ITO around reserving is as positive electrode;
5) preparation amorphous silicon layer: on the ITO layer, deposit P, I, three layers of amorphous silicon membrane of N;
6) preparation metal total reflection layer: metal-coated membrane on the ITO layer.
7. according to claim 6ly coat the manufacturing approach of the non-crystal silicon solar cell of waveguiding structure, it is characterized in that, also comprise 7 based on double-sided metal) test and encapsulation: to non-crystal silicon solar cell test, electrical method reparation and annealing; Non-crystal silicon solar cell is encapsulated.
8. the manufacturing approach that coats the non-crystal silicon solar cell of waveguiding structure based on double-sided metal according to claim 6; It is characterized in that, in the step 1), when glass substrate is cleaned; Use acetone, ethanol; Adopt ultrasonic wave that glass substrate is cleaned, and then dry up, to guarantee the cleaning of glass substrate with nitrogen.
9. the manufacturing approach that coats the non-crystal silicon solar cell of waveguiding structure based on double-sided metal according to claim 6; It is characterized in that; Step 2) and in the step 4) during preparation mask; Adopt following mode: a circle is sticked with adhesive tape in the edge at glass substrate, and short circuit is caused by the metal plated layer in the glass substrate side when preventing metal-coated membrane.
10. according to claim 6ly coat the manufacturing approach of the non-crystal silicon solar cell of waveguiding structure, it is characterized in that, in the step 3), adopt the mode of direct current sputtering silver-plated on glass substrate, aluminium film or golden film based on double-sided metal;
In the step 4), adopt magnetron sputtering to prepare the ITO layer, as top electrode;
In the step 5), using plasma strengthens chemical vapour deposition technique (PECVD) and on the ITO layer, deposits P, I, three layers of amorphous silicon membrane of N;
In the step 6), adopt that magnetron sputtering method is silver-plated on the ITO layer, aluminium film or golden film, as bottom electrode.
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| CN201210013076.9A CN102694038B (en) | 2012-01-16 | 2012-01-16 | Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof |
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| CN201210013076.9A CN102694038B (en) | 2012-01-16 | 2012-01-16 | Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof |
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Citations (5)
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|---|---|---|---|---|
| US20060185714A1 (en) * | 2005-02-05 | 2006-08-24 | Samsung Electronics Co., Ltd. | Flexible solar cell and method of producing the same |
| CN201038178Y (en) * | 2007-01-23 | 2008-03-19 | 李毅 | Flexible solar cell |
| CN102282679A (en) * | 2008-11-14 | 2011-12-14 | 班德加普工程有限公司 | Nanostructured devices |
| US20120000521A1 (en) * | 2010-07-01 | 2012-01-05 | Egypt Nanotechnology Center | Graphene Solar Cell And Waveguide |
| CN102456761A (en) * | 2010-11-02 | 2012-05-16 | 方靖淮 | Film solar cell |
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- 2012-01-16 CN CN201210013076.9A patent/CN102694038B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060185714A1 (en) * | 2005-02-05 | 2006-08-24 | Samsung Electronics Co., Ltd. | Flexible solar cell and method of producing the same |
| CN201038178Y (en) * | 2007-01-23 | 2008-03-19 | 李毅 | Flexible solar cell |
| CN102282679A (en) * | 2008-11-14 | 2011-12-14 | 班德加普工程有限公司 | Nanostructured devices |
| US20120000521A1 (en) * | 2010-07-01 | 2012-01-05 | Egypt Nanotechnology Center | Graphene Solar Cell And Waveguide |
| CN102456761A (en) * | 2010-11-02 | 2012-05-16 | 方靖淮 | Film solar cell |
Non-Patent Citations (1)
| Title |
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| 陈麟等: "对称金属包覆结构中反射光干涉效应的研究", 《中国激光》, vol. 37, no. 12, 31 December 2010 (2010-12-31), pages 3145 - 3149 * |
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