CN203312306U

CN203312306U - Transparent solar cell

Info

Publication number: CN203312306U
Application number: CN2013202818805U
Authority: CN
Inventors: 赵东林
Original assignee: KMT NANO TECHNOLOGY (HONGKONG) Co Ltd
Current assignee: KMT NANO TECHNOLOGY (HONGKONG) Co Ltd
Priority date: 2013-05-22
Filing date: 2013-05-22
Publication date: 2013-11-27
Anticipated expiration: 2023-05-22

Abstract

The utility model relates to a transparent solar cell which comprises a transparent substrate. A P-type semiconductor layer is deposited on the transparent substrate. An N-type semiconductor layer is deposited on the P-type semiconductor layer in part. An electrode is printed on the P-type semiconductor layer and the N-type semiconductor layer. A transparent adhesive layer is arranged on the N-type semiconductor layer and the electrode and is sealed with a backboard. The transparent solar cell is favorable in light transmittance with a visible light transmittance of more than 80%, is simple in technology and low in cost, is selectable in available materials, can completely adsorb ultraviolet rays of 300-500nm for power generation, and can effectively isolate infrared radiation.

Description

Transparent solar cell

Technical field

The utility model relates to a kind of transparent solar cell, belongs to area of solar cell.

Background technology

The TCO material is a kind of good battery material material, is widely used in the electrode of solar cell.The TCO semiconductor, because its energy gap is greater than 3.2eV, has good visible light transmissivity, higher to ultraviolet absorptivity, and it also is applied to heterojunction solar battery.SnO ₂The figure layer is widely used in building glass, and vehicle glass, have good printing opacity effect of heat insulation.Ultraviolet ray is as non-visible light, and it has invariably and can exert an influence to illumination, by SnO ₂Deng the difference doping of material, obtain N-type and P type semiconductor.Compound N type semiconductor and P type semiconductor, form PN junction, absorb the ultraviolet ray generating in sunray, be applied to building glass, can realize in the situation that do not affect architectural lighting, produce certain electric weight, reduce ultraviolet radiation and good heat insulating effect, realize the multifunction of building glass.

The utility model content

In view of this, the utility model provides a kind of transparent solar cell, can in the situation that not affect daylighting, absorb the ultraviolet ray generating, and have certain infrared shield effect.

For achieving the above object, the utility model provides a kind of transparent solar cell, described transparent solar cell comprises a transparent substrates, above described transparent substrates, deposit a p type semiconductor layer, above described p type semiconductor layer, local deposits has a n type semiconductor layer, described p type semiconductor layer and be printed with an electrode above n type semiconductor layer, described n type semiconductor layer and be provided with a substratum transparent above electrode, described substratum transparent is sealed with a backboard.

As preferred version, wherein said transparent substrates is quartz glass, devitrified glass, polychloroethylene film or PETG film, and its thickness is 2mm.

As preferred version, wherein said p type semiconductor layer is In/Sn sull, CuAlO ₂Film or P type ZnO film, its thickness is 400 ~ 600nm.

As preferred version, wherein said n type semiconductor layer is transparent Sb/Sn sull, ito thin film or FTO film, and its thickness is 400 ~ 600nm.

As preferred version, wherein said electrode is that 1mm is wide, the thick silver-colored line of 20 μ m or copper cash.

As preferred version, wherein said substratum transparent is ethylene-vinyl acetate copolymer coating, polyvinyl butyral resin coating or polyvinyl acetate coating, and its thickness is 0.5mm.

As preferred version, wherein said backboard is polymethyl methacrylate, and its thickness is 1mm.

The utlity model has following beneficial effect:

1, light transmittance is good, and the transmitance of visible light is greater than 80%;

2, technique is simple, and cost is low, and available material is many;

3, the ultraviolet ray of 300 ~ 500nm all absorbs generating;

4, can effectively completely cut off infrared radiation.

The accompanying drawing explanation

Fig. 1 is the end view schematic diagram of battery cell;

In figure: the 1-transparent substrates; The 2-P type semiconductor layer; The 3-N type semiconductor layer; The 4-electrode; The 5-substratum transparent; The 6-backboard.

Embodiment

Should be noted that, below illustrating is all example, being intended to provides and further illustrates the utility model, except as otherwise noted, all Science and Technology terms used herein have with the utility model under the identical meanings usually understood of technical field personnel.

Following examples describe the utility model in detail.Prepare various raw materials and the items of equipment that the utility model uses and be conventional commercially available prod, all can buy directly and obtain by market.

With reference to Fig. 1, the utility model provides a kind of transparent solar cell, described transparent solar cell comprises a transparent substrates 1, above described transparent substrates 1, deposit a p type semiconductor layer 2, above described p type semiconductor layer 2, local deposits has a n type semiconductor layer 3, described p type semiconductor layer 2 and be printed with an electrode 4 above n type semiconductor layer 3, described n type semiconductor layer 3 and be provided with a substratum transparent 5 above electrode 4, described substratum transparent 5 is sealed with a backboard 6.

Embodiment 1

Transparent substrates 1 is provided, and stand-by to this transparent substrates 1 ultrasonic cleaning;

Adopt chemical vapour deposition technique or magnetron sputtering method, at this transparent substrates 1(quartz glass, devitrified glass, polychloroethylene film or PETG film, its thickness is 2mm) the thick p type semiconductor layer 2 of upper deposition 400 ~ 600nm, p type semiconductor layer 2 can be In/Sn sull, CuAlO ₂A kind of in film or P type ZnO film, but be not limited to that these are several.According to above selected material and doping difference thereof, final battery efficiency, absorbing wavelength can be under some influence.

Adopt high temperature to cover glue and cover on P type semiconductor the position for the printed silver line, pass through afterwards magnetron sputtering method, on p type semiconductor layer, deposit the n type semiconductor layer 3 that 400 ~ 600nm is thick, n type semiconductor layer 3 can be a kind of in Sb/Sn sull, ito thin film or FTO film, but be not limited to mentioned kind, according to kind and the doping difference of selected material, light transmittance can be under some influence.

Remove the high temperature shielding layer, the method that adopts laser to portray, be divided into some sub-battery units by battery.

Adopt the method for silk screen printing, printing 1mm is wide on p type semiconductor layer and n type semiconductor layer, and the electrode 4 that 20 μ m are thick, the material of electrode 4 can be wherein a kind of of silver slurry, copper slurry or Graphene, but are not limited to above kind.According to the power output demand, connect each sub-battery unit, and draw bus bar.

Finally use substratum transparent 5, backboard 6 seals lamination.

Above-mentioned substratum transparent 5 is the EVA(ethylene-vinyl acetate copolymer) coating or PVB(polyvinyl butyral resin) coating or polyvinyl acetate coating, its thickness is 0.5mm.

Above-mentioned backboard 6 is polymethyl methacrylate, and its thickness is 1mm.

Above embodiment is only preferred implementation column of the present utility model; for the technology in the utility model; under the prerequisite that does not break away from core technology feature of the present utility model, can also make some improvements and modifications, these retouchings and improvement also should belong to scope of patent protection of the present utility model.

Claims

1. transparent solar cell, it is characterized in that, described transparent solar cell comprises a transparent substrates, above described transparent substrates, deposit a p type semiconductor layer, above described p type semiconductor layer, local deposits has a n type semiconductor layer, described p type semiconductor layer and be printed with an electrode above n type semiconductor layer, described n type semiconductor layer and be provided with a substratum transparent above electrode, described substratum transparent is sealed with a backboard.

2. transparent solar cell as claimed in claim 1, is characterized in that, described transparent substrates is quartz glass, devitrified glass, polychloroethylene film or PETG film, and its thickness is 2mm.

3. transparent solar cell as claimed in claim 1, is characterized in that, described p type semiconductor layer is In/Sn sull, CuAlO ₂Film or P type ZnO film, its thickness is 400 ~ 600nm.

4. transparent solar cell as claimed in claim 1, is characterized in that, described n type semiconductor layer is transparent Sb/Sn sull, ito thin film or FTO film, and its thickness is 400 ~ 600nm.

5. transparent solar cell as claimed in claim 1, is characterized in that, described electrode is that 1mm is wide, silver-colored line or copper cash that 20 μ m are thick.

6. transparent solar cell as claimed in claim 1, is characterized in that, described substratum transparent is ethylene-vinyl acetate copolymer coating, polyvinyl butyral resin coating or polyvinyl acetate coating, and its thickness is 0.5mm.

7. transparent solar cell as claimed in claim 1, is characterized in that, described backboard is polymethyl methacrylate, and its thickness is 1mm.