CN102694038B - Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof - Google Patents
Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof Download PDFInfo
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- CN102694038B CN102694038B CN201210013076.9A CN201210013076A CN102694038B CN 102694038 B CN102694038 B CN 102694038B CN 201210013076 A CN201210013076 A CN 201210013076A CN 102694038 B CN102694038 B CN 102694038B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar energy, particularly a solar cell. The amorphous silicon solar cell based on a bifacial metal cladding waveguide structure comprises a solar cell layer, wherein the solar cell layer comprises a substrate layer, an amorphous silicon layer, a conducting film layer and a glass layer, wherein the glass layer, the conducting film layer and the amorphous silicon layer form a waveguide layer; the substrate layer adopts a metal total reflection layer; a metal coupling layer is arranged on the glass layer; and the metal coupling layer, the waveguide layer and the metal total reflection layer form a waveguide structure. The manufacturing method comprises the following steps: 1) preparing the glass layer; 2) preparing the mask; 3) preparing the metal coupling layer; 4) preparing the conducting film layer; 5) preparing the amorphous silicon layer; and 6) preparing the metal total reflection layer. Due to the technical scheme above, the invention has the advantages of wide absorption spectrum, wide spectrum incident angle, high efficiency, strong light trapping effect and the like.
Description
Technical field
The present invention relates to technical field of solar, particularly relate to a kind of solar cell.
Background technology
The main flow of current solar cell is monocrystalline silicon and polysilicon, accounts for world's solar cell gross annual output amount more than 70%.But this kind of solar cell cost is higher, for the production of semi-conducting material limited, be subject to the restriction of large-scale production.
Therefore; from material to the whole process making solar cell; to can manufacture continuously and energy-conservation, large area, lightweight, the thin film solar cell of large-scale production can produce eager demand, and its representative material is amorphous silicon hydride (a-Si:H).D.E.Conlson and C.R.Wronski in U.S. RCA laboratory in 1976 is formed at Spear and controls the basis of p-n junction work utilizes photogenic voltage (PV) effect to make first a-Si solar cell in the world, has opened the tent curtain that a-Si applies in opto-electronic device or PV assembly.The most high-photoelectric transformation efficiency of current a-Si multijunction solar cell oneself reach 15%.But the absorption region that existing thin film amorphous silicon solar cell still has the incident angle range of spectrum and spectrum is narrow, light trapping effect is strong, the problems such as photoelectric conversion efficiency is not high.
Summary of the invention
The object of the invention is to, a kind of non-crystal silicon solar cell based on the coated waveguiding structure of double-sided metal is provided, to solve the problems of the technologies described above.
Another object of the present invention is to, provide a kind of manufacture method of the non-crystal silicon solar cell based on the coated waveguiding structure of double-sided metal, to solve the problems of the technologies described above.
Technical problem solved by the invention can realize by the following technical solutions:
Based on the non-crystal silicon solar cell of the coated waveguiding structure of double-sided metal, comprise a solar cell layer, it is characterized in that, described solar cell layer comprises a substrate layer, the amorphous silicon layer be arranged on described substrate layer, the conductive membrane layer be arranged on described amorphous silicon layer, the glassy layer be arranged on described conductive membrane layer, and described glassy layer, described conductive membrane layer and described amorphous silicon layer form a ducting layer;
Described substrate layer adopts a metal total reflection layer;
Also comprise a Metallic coupling layer, described Metallic coupling layer is arranged on described glassy layer;
Described Metallic coupling layer, described ducting layer and described metal total reflection layer form a waveguiding structure.
A large amount of solar energies, by optical coupling afferent echo conducting shell, to make increase spectrum incident angle range and spectral absorption scope, is coupled in optical waveguide structure by Metallic coupling layer of the present invention, increases the utilance of light.Light can effectively reflect by metal total reflection layer of the present invention, and the secondary further increasing light utilizes, and plays light trapping effect together with Metallic coupling layer simultaneously.The present invention, from waveguiding structure, makes it in extremely wide frequency spectrum and great spectrum incident angle, have very high absorptivity with the material of low cost by setting structure.Effectively improve light energy absorption efficiency.
Described waveguiding structure thickness is from top to bottom followed successively by: Metallic coupling layer 10nm-50nm, glassy layer 0.1mm-5mm, conductive membrane layer 0.5 μm-3 μm, amorphous silicon layer 0.5 μm-2 μm, metal total reflection layer 0.5 μm-5 μm.The present invention, under the prerequisite improving light energy absorption rate, still can keep membrane structure, with Portable belt, transport and installation.
The metal level that described Metallic coupling layer is aluminium, a kind of metal material of silver, Jin Dengzhong is made.
Described conductive membrane layer as top electrode, described metal total reflection layer as bottom electrode, the metal total reflection layer that described metal total reflection layer is aluminium, silver, gold copper-base alloy are made.
Described amorphous silicon layer comprises P-type silicon layer, intrinsic silicon layer and N-type silicon layer from top to bottom.
Based on the manufacture method of the non-crystal silicon solar cell of the coated waveguiding structure of double-sided metal, comprise the steps:
1) glassy layer is prepared: glass substrate is cleaned;
2) mask: carry out mask in the edge of glass substrate;
3) Metallic coupling layer is prepared: at the plane of incidence metal-coated membrane of glass substrate;
4) conductive membrane layer is prepared: again carry out mask in the edge of glass substrate;
ITO layer is prepared in the below of glass substrate;
And again carry out mask in the edge of glass substrate, and the ITO reserving surrounding is as positive electrode;
5) amorphous silicon layer is prepared: deposit P, I, N tri-layers of amorphous silicon membrane on the ito layer;
6) metal total reflection layer is prepared: metal-coated membrane on amorphous silicon layer.
The present invention adopts above-mentioned making to take precautions against, and has effectively widened spectral absorption scope and ranges of incidence angles, adds the absorption efficiency of luminous energy.
Also comprise 7) test and encapsulation: to non-crystal silicon solar cell test, electrical method reparation and annealing; Non-crystal silicon solar cell is encapsulated.
Step 1) in, when cleaning glass substrate, using acetone, ethanol, adopting ultrasonic wave to clean glass substrate, and then drying up with nitrogen, to ensure the clean of glass substrate.
Step 2) and step 4) in when preparing mask, in the following way: a circle on the edge tape sticker of glass substrate, when preventing metal-coated membrane, glass substrate side is coated with metal level, causes short circuit.
Adhesive tape preferably adopts high temperature gummed tape, and the heatproof temperature of high temperature gummed tape is higher than 200 °.
Step 3) in, adopt mode silver-plated, aluminium or the golden film on the glass substrate of direct current sputtering.
Step 4) in, adopt magnetron sputtering to prepare ITO layer, as top electrode.
Step 5) in, using plasma strengthens chemical vapour deposition technique (PECVD) and deposits P, I, N tri-layers of amorphous silicon membrane on the ito layer.The parameter of plasma enhanced chemical vapor deposition method is preferably as follows: radio-frequency power is 36W, and power capacity is coupled as 14.12MHz, and substrate temperature range is 200 DEG C ~ 250 DEG C, and gas aura air pressure range is at below 20pa.Amorphous silicon layer is opto-electronic conversion nucleus.
Step 6) in, adopt magnetron sputtering method silver-plated on amorphous silicon layer, gold or aluminium film, as bottom electrode.
Beneficial effect: owing to adopting technique scheme, the present invention can increase the absorption region of spectrum and the incident angle range of spectrum by waveguiding effect.The present invention has the remarkable advantages such as cost is low, absorption spectrum is wide, the incident angle of spectrum is wide, efficiency is high, optical energy loss is low.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is flow chart of the present invention.
Embodiment
The technological means realized to make the present invention, creation characteristic, reaching object and effect is easy to understand, setting forth the present invention further below in conjunction with concrete diagram.
With reference to Fig. 1, based on the non-crystal silicon solar cell of the coated waveguiding structure of double-sided metal, comprise a solar cell layer, solar cell layer comprises a substrate layer, the amorphous silicon layer 4 be arranged on substrate layer, the conductive membrane layer 3 be arranged on amorphous silicon layer 4, the glassy layer 2 be arranged on conductive membrane layer 3, and glassy layer 2, conductive membrane layer 3 and amorphous silicon layer 4 form a ducting layer.Substrate layer adopts a metal total reflection layer 5.Also comprise a Metallic coupling layer 1, Metallic coupling layer 1 is arranged on glassy layer 2.Metallic coupling layer 1, ducting layer and metal total reflection layer 5 form a waveguiding structure.Metallic coupling layer 1 of the present invention, by optical coupling afferent echo conducting shell, when transmitting in ducting layer to make light, increases spectrum incident angle range and spectral absorption scope, is coupled in optical waveguide structure by a large amount of solar energies, increase the utilance of light.Light can effectively reflect by metal total reflection layer 5 of the present invention, and the secondary further increasing light utilizes, and plays light trapping effect together with Metallic coupling layer simultaneously.The present invention, from waveguiding structure, makes it adding with the material of low cost by setting structure: to have very high absorptivity in extremely wide frequency spectrum and great spectrum incident angle.Effectively improve light energy absorption efficiency and with low cost.
Waveguiding structure thickness is from top to bottom followed successively by: Metallic coupling layer 1 is 10nm-50nm, glassy layer 2 is 0.1mm-5mm, conductive membrane layer 3 is 0.5 μm-3 μm, amorphous silicon layer 4 is 0.5 μm-2 μm, metal total reflection layer 5 is 0.5 μm-5 μm.The present invention, under the prerequisite improving light energy absorption rate, still can keep membrane structure, with Portable belt, transport and installation.
The metal level that Metallic coupling layer 1 is aluminium, a kind of metal material of silver, Jin Dengzhong is made.
Conductive membrane layer 3 as top electrode, metal total reflection layer 5 as bottom electrode, the metal total reflection layer 5 that metal total reflection layer 5 is aluminium, silver, gold copper-base alloy are made.
Amorphous silicon layer 4 comprises P-type silicon layer, intrinsic silicon layer and N-type silicon layer from top to bottom.
Based on the manufacture method of the non-crystal silicon solar cell of the coated waveguiding structure of double-sided metal, comprise the steps: the first step, prepare glassy layer 2: glass substrate is cleaned.When cleaning glass substrate, using acetone, ethanol, adopting ultrasonic wave to clean glass substrate, and then drying up with nitrogen, to ensure the clean of glass substrate.
Second step, mask a: circle on the edge tape sticker of glass substrate, carries out mask.Adhesive tape preferably adopts high temperature gummed tape, and the heatproof temperature of high temperature gummed tape is higher than 200 °.
3rd step, prepares Metallic coupling layer 1: at the plane of incidence metal-coated membrane of glass substrate.During concrete enforcement, adopt mode silver-plated, aluminium film or the golden film on the glass substrate of direct current sputtering.
4th step, prepares conductive membrane layer 3: adopt the mode identical with second step again to carry out mask in the edge of glass substrate.Then magnetron sputtering is adopted to prepare ITO layer, as top electrode in the below of glass substrate.Then again carry out mask in the edge of glass substrate, and the ITO reserving surrounding is as positive electrode.
5th step, prepares amorphous silicon layer 4: using plasma strengthens chemical vapour deposition technique (PECVD) and deposits P, I, N tri-layers of amorphous silicon membrane on the ito layer.The parameter of plasma enhanced chemical vapor deposition method is preferably as follows: radio-frequency power is 36W, and power capacity is coupled as 14.12MHz, and substrate temperature range is 200 DEG C ~ 250 DEG C, and gas aura air pressure range is at below 20pa.Amorphous silicon layer 4 is opto-electronic conversion nucleus.
6th step, prepares metal total reflection layer 5: adopt magnetron sputtering method metal-coated membrane on amorphous silicon layer.During concrete enforcement, preferably silver-plated film, aluminium film or golden film on amorphous silicon layer, as bottom electrode.
7th step, test and encapsulation: to non-crystal silicon solar cell test, electrical method reparation and annealing.Non-crystal silicon solar cell is encapsulated.
More than show and describe general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.
Claims (4)
1., based on the manufacture method of the non-crystal silicon solar cell of the coated waveguiding structure of double-sided metal, it is characterized in that, comprise the steps:
1) glassy layer is prepared: glass substrate is cleaned;
2) mask: carry out mask in the edge of glass substrate;
3) Metallic coupling layer is prepared: at the plane of incidence metal-coated membrane of glass substrate;
4) conductive membrane layer is prepared: again carry out mask in the edge of glass substrate;
ITO layer is prepared in the below of glass substrate;
And again carry out mask in the edge of glass substrate, and the ITO reserving surrounding is as positive electrode;
5) amorphous silicon layer is prepared: deposit P, I, N tri-layers of amorphous silicon membrane on the ito layer;
6) metal total reflection layer is prepared: metal-coated membrane on amorphous silicon layer;
Described glassy layer, described conductive membrane layer and described amorphous silicon layer form a ducting layer; Described Metallic coupling layer, described ducting layer and described metal total reflection layer form a waveguiding structure;
Step 3) in, adopt mode silver-plated, aluminium film or the golden film on the glass substrate of direct current sputtering;
Step 4) in, adopt magnetron sputtering to prepare ITO layer, as top electrode;
Step 5) in, using plasma strengthens chemical vapour deposition technique (PECVD) and deposits P, I, N tri-layers of amorphous silicon membrane on the ito layer;
Step 6) in, adopt silver-plated on amorphous silicon layer, the aluminium film of magnetron sputtering method or golden film, as bottom electrode;
The parameter of plasma enhanced chemical vapor deposition method is as follows: radio-frequency power is 36W, and power capacity is coupled as 14.12MHz, and substrate temperature range is 200 DEG C ~ 250 DEG C, and gas aura air pressure range is at below 20pa.
2. the manufacture method of the non-crystal silicon solar cell based on the coated waveguiding structure of double-sided metal according to claim 1, is characterized in that, also comprise 7) test and encapsulation: to non-crystal silicon solar cell test, electrical method reparation and annealing; Non-crystal silicon solar cell is encapsulated.
3. the manufacture method of the non-crystal silicon solar cell based on the coated waveguiding structure of double-sided metal according to claim 1, it is characterized in that, step 1) in, when cleaning glass substrate, use acetone, ethanol, adopt ultrasonic wave to clean glass substrate, and then dry up with nitrogen, to ensure the clean of glass substrate.
4. the manufacture method of the non-crystal silicon solar cell based on the coated waveguiding structure of double-sided metal according to claim 1, it is characterized in that, step 2) and step 4) in when preparing mask, in the following way: a circle on the edge tape sticker of glass substrate, when preventing metal-coated membrane, glass substrate side is coated with metal level, causes short circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210013076.9A CN102694038B (en) | 2012-01-16 | 2012-01-16 | Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210013076.9A CN102694038B (en) | 2012-01-16 | 2012-01-16 | Amorphous silicon solar cell based on bifacial metal cladding waveguide structure and manufacturing process thereof |
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| CN102694038A CN102694038A (en) | 2012-09-26 |
| CN102694038B true CN102694038B (en) | 2014-12-24 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201038178Y (en) * | 2007-01-23 | 2008-03-19 | 李毅 | Flexible solar cell |
| CN102282679A (en) * | 2008-11-14 | 2011-12-14 | 班德加普工程有限公司 | Nanostructured devices |
| CN102456761A (en) * | 2010-11-02 | 2012-05-16 | 方靖淮 | Film solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100657949B1 (en) * | 2005-02-05 | 2006-12-14 | 삼성전자주식회사 | Flexible solar cells and process for preparing the same |
| US20120000521A1 (en) * | 2010-07-01 | 2012-01-05 | Egypt Nanotechnology Center | Graphene Solar Cell And Waveguide |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201038178Y (en) * | 2007-01-23 | 2008-03-19 | 李毅 | Flexible solar cell |
| CN102282679A (en) * | 2008-11-14 | 2011-12-14 | 班德加普工程有限公司 | Nanostructured devices |
| CN102456761A (en) * | 2010-11-02 | 2012-05-16 | 方靖淮 | Film solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 对称金属包覆结构中反射光干涉效应的研究;陈麟等;《中国激光》;20101231;第37卷(第12期);第3145-3149页 * |
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Granted publication date: 20141224 Termination date: 20190116 |