CN202332901U - Soft-base flexible solar-cell photovoltaic module - Google Patents
Soft-base flexible solar-cell photovoltaic module Download PDFInfo
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- CN202332901U CN202332901U CN2011204735475U CN201120473547U CN202332901U CN 202332901 U CN202332901 U CN 202332901U CN 2011204735475 U CN2011204735475 U CN 2011204735475U CN 201120473547 U CN201120473547 U CN 201120473547U CN 202332901 U CN202332901 U CN 202332901U
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- photovoltaic module
- flexible solar
- battery
- solar battery
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The utility model relates to a soft-base flexible solar-cell photovoltaic module with high light transmittance prepared from a modified substrate, belonging to the technical field of the thin-film solar cell. The utility model intends to provide solutions of a flexible cell and a preparation method thereof. The soft-base flexible solar-cell photovoltaic module has the following main technical characteristics that: a stainless steel template is formed into a modified polyimide (PI) substrate (PI substrate for short); and light transmitting through holes on the PI substrate include drainage holes and convergence holes, and penetrate through and are distributed in each laminated film surface of a conducting film layer and a photoelectric conversion layer both deposited on the PI substrate. The soft-base flexible solar-cell photovoltaic module has obvious innovation effects, including reducing short circuit and leakage of electricity caused by crystallization of the processing interface of the photoelectric layer due to laser scribing, reducing processing steps and reducing the production cost. Besides, the light transmitting flexible solar photovoltaic module is wide in use.
Description
Technical field
The utility model patent relates to the solar photovoltaic assembly by modification substrate preparation high transmission rate, belongs to technical field of thin-film solar.
Background technology
At present, commercial applications solar cell photovoltaic assembly is divided into two big types, and one type is bulk crystals silicon solar cell, polysilicon, and another kind of is with solar cells such as the silica-based series of thin-film solar cells, CIGS series, cadmium telluride series.The thin-film solar cells type of substrate can be divided into hard substrate and soft base again.Thin-film solar cells market is substrate with glass mainly, belongs to hard substrate battery, and the product possession share is maximum, and soft substrate membrane solar cell market is less.Soft base also comprises stainless steel band and the copper strips etc. of conduction type, the polyimides of insulation class.U.S. Pat 6858461 has proposed on transparent TCO glass baseplate, to adopt the laser ablation light absorbing zone to process a kind of solar module with different light permeable rates with back of the body metal electrode layer film respectively with US4795500.Japan Patent JP2003003956 and Chinese patent CN200480001786.3 are in the ordered control that realizes perforate size (diameter 30 ~ 500 μ m), pitch of holes (1.01 ~ 2 times to the diameter distance) and dot matrix on the basis of above-mentioned United States Patent (USP) through control laser the relative scanning speed between frequency and laser and the substrate of cut-offfing.The common trait of this type patent is to adopt laser ablation light absorbing zone and back of the body metal electrode layer film to realize that light passes through.Its defective is that the energetic plasma fusing back of the body metal that laser ablation produces directly causes on the interface of etch areas, forming the direct short-circuit of front and back electrode and the crystallization of amorphous silicon particle; Increased leakage current; Reduce fill factor, curve factor, thereby destroyed battery electrical property.Chinese patent 200710073014.6 discloses modified polyimide PI substrate flexible solar battery, utilizes its polyimide film in light weight, and transparent fully after the low and modification of cost, light transmittance reaches 93%, has improved photoelectric transformation efficiency.But still need to improve the technology of confluxing, like the affinity between cell substrate and the encapsulating material, improve light transmittance, reduce product cost, to satisfy the many-sided requirement in market, especially in environmental protection photovoltaic volt architecture-integral field.
The utility model content
Be to provide the solution of a kind of flexible battery and preparation method thereof like above said the utility model purpose.The utility model utilizes the stainless steel template to generate modified polyimide PI substrate (being called for short the PI substrate), and the printing opacity through hole on it comprises conduction hole and confluxes the hole, is distributed in the preceding electrode pattern zone.Printing opacity through hole such as conduction hole, the hole of confluxing connects, is distributed on the conductive film layer and each lamination face of photoelectric conversion layer that deposits on the PI substrate on the PI substrate.The prefabricated postorder laser grooving and scribing conductive film layer that reduced reduces operation to short circuit and electric leakage that photonic layer factory interface crystallization is caused, and production cost reduces.
The utility model purpose is also utilizing flexible battery crooked arbitrarily; Shape is changeable; Printing opacity through hole scalable, the characteristic of easy encapsulation is processed wind load resistant power; Flexible battery assembly and cell photovoltaic construction set attractive in appearance, as to meet building standard requirement printing opacity can be melted in green energy conservation, the BIPV photovoltaic building.
The technical problem that the utility model is proposed more than combining and the task of realization; Technical solution is: the flexible thin-film solar cell and the package assembling thereof that with the polyimides are substrate; Comprising unijunction or tie silica-based serial flexible thin-film solar cell chip and encapsulating material more, it is characterized in that said flexible battery, is by transparent; The modified polyimide PI of light transmittance more than 93% cooks substrate; The printing opacity through hole that distributes in the electrode pattern before this PI substrate is provided with comprises the current steering hole and confluxes the hole, is to be replicated in the thick stainless steel thin slice template graphics of 0.45mm to 0.65mm (or being called for short template); Corresponding said through hole connects and is distributed on nesa coating TCO and silica-based each rete of PIN type; Form said flexible battery chip, this chip has stacked the affinity material and has processed between header board and the backboard, processes light-transmission type solar battery group or photovoltaic building assembly by lamination.Then require the header board transparent material and the back veneer material of encapsulation to be all flexible polymeric materials.If rigidity printing opacity BIPV photovoltaic module then requires to have at least in used header board transparent material of encapsulation and the back veneer material a kind of rigidity that is.With header board transparent material, adhesive, battery chip, adhesive, back veneer material packaging by hot pressing in laminating machine or autoclave.
Said flexible battery comprises unijunction thin film amorphous silicon battery, is that the PI substrate with flexible and transparent is a substrate, above that sequential cascade nesa coating TCO, P type amorphous silicon P
+A-Si, intrinsic amorphous silicon I a-Si, N type amorphous silicon N
+A-Si and metal film Al.Multijunction cell comprises binode or three knot laminated cells, can be homojunction or heterojunction.Heterojunction battery with binode is an example, and modified polyimide PI transparent substrate is docile and obedient the thin layer that the preface deposition forms: by composite transparent conductive film TCO on it; P type amorphous silicon P
+A-Si; Intrinsic amorphous silicon I a-Si; N type microcrystal silicon; P type microcrystal silicon; Intrinsic amorphous silicon I a-Si; N type amorphous silicon N
+A-Si; Metal film Al forms.
0.45mm to 0.65mm thick stainless steel substrates or band; The printing opacity through hole that which is provided with in preceding electrode pattern of the utility model and the distribution pattern comprises electric current collection and confluxes the hole; With silk screen printing or spraying preparation PI substrate, heating cure forms has respective graphical and printing opacity through hole on this stainless steel substrates.Light-transmission type cell photovoltaic assembly also comprises lead outlet bonding wire, installation connection box and encapsulating.
Prior art does not solve the through hole in the preceding electrode pattern of disposable solution; This just causes the post-order process step to be processed repeatedly; The utility model has solved the printing opacity via design that modification substrate disposable solution comprises the conduction hole and the hole of confluxing; Perforation is distributed on PI substrate, conductive film layer, each lamination face of photoelectric conversion layer, has exempted said each rete processing more than the nesa coating TCO etc., has saved operation.
Said solar cell comprises the flexible amorphous silicon solar cell of unijunction, binode, three knots more than the utility model.Wherein two the knot battery chip; Depositing temperature is vacuum moulding machine amorphous silicon membrane layer under 250 ℃ of conditions: the P type of top battery; Rete is thick 120, the I type rete thick 910 of top battery; Form tunnel junctions in temperature in the P type microcrystalline silicon film bed thickness 250 of the N type rete thick 250 of 400 ℃ of deposition top batteries and end battery, the thick 250 flexible solar battery photovoltaic modulies of N type rete of, end battery thick 3500 in the I type rete of 400 ℃ of deposition end batteries in temperature.The battery chip of two knots is prepared into a kind of light-transmission type flexible solar battery photovoltaic module with transparent header board and backboard organic or inorganic material through lamination/autoclave process.Light-transmission type flexible unit after the hot pressing of encapsulation flexible solar battery photovoltaic module can be cut out, at lead outlet bonding wire, installation connection box and encapsulating.
The difference of processing the flexible amorphous silicon solar cell with existing opaque PI substrate is that mainly the pellicular cascade structural order of battery is different; The unijunction that the utility model proposes or many knots; All be on substrate, to make P I N thin layer successively, the latter's order then is a N I P thin layer.For the hull cell of microstructure, relate to the technology difference, directly influence the photoelectric conversion efficiency of product.
The utility model is on the PI substrate, and deposition P layer deposits the I layer more earlier, and its meaning is the improvement that helps eigen I layer performance.Usually eigen I layer amorphous silicon I a-Si is weak N type, earlier deposition P type amorphous silicon P
+A-Si helps improving the light sensitive characteristic of eigen I layer amorphous silicon a-Si, thereby improves the transformation efficiency of battery.
With the transparent polyimides PI substrate of modification, make the heterojunction battery, its advantage is that the printing opacity of top battery is good, thereby has reduced the recombination losses of battery surface.Adopt the battery structure of opaque PI substrate and NIP.Must be on the PI substrate first deposited amorphous silicon fiml; Back deposition TCO film; Cause because of 350 ℃-400 ℃ of the depositing temperatures of TCO film greater than 220 ℃-250 ℃ of the depositing temperatures of amorphous silicon film, the amorphous silicon film that causes previous deposition great amount of high-temperature occurs and releases the hydrogen phenomenon under 350 ℃ of-400 ℃ of high temperature.Cause amorphous silicon film a large amount of microvoids hole to occur, the amorphous silicon performance sharply decays, and battery electrical property is decayed thereupon.Finally can influence the conversion efficiency and the load-carrying ability of solar cell.
The utility model ground positive effect is to break through taboo, and the adjusting process structure can obtain all good TCO film of light transmittance and face resistance at 350 ℃-400 ℃ optimised process temperature deposition TCO film.Give the lifting of depositing temperature, found motivation, avoid amorphous silicon film at high temperature to release hydrogen in a large number, preventing P, I and I, N interface diffusion of impurities at high temperature, the decay that I layer performance caused.
Technical solution according to the utility model proposition: the polyimides of the preparation modification of PI substrate; Fill a prescription in molar ratio: 3,3`-three fluoro dimethyl-4,4` MDA: N; N-dimethylacetylamide: 2; 3,3`, 4`-bibenzene tetracarboxylic dianhydride=(0.9～1.1): (45～50): (0.9～1.1) makes the transparent substrate of modification.
Use this substrate, because high light transmission can obtain than the higher conversion efficiency of solar cell that with glass is substrate.
The good effect that the utility model produces mainly adopts modified polyimide PI substrate, has reduced the compound of battery surface, and high temperature tolerance property is strong, and in the later stage package application, manifesting flexible thin-film solar cell photoelectric conversion efficiency and cost performance has raising significantly.
Description of drawings
Fig. 1, be the structural representation of the flexible solar battery chip of the utility model.Wherein 1 is metal film layer, and 2 is the N type amorphous silicon of end battery, and 3 is the I type amorphous silicon of end battery; 4 is the P type microcrystal silicon of end battery, and 5 is the N type microcrystal silicon of top battery, and 6 is the I type amorphous silicon of top battery; 8 is the P type amorphous silicon of top battery, and 7 is nesa coating, and 9 is the PI substrate of transparent modified polyimides; See Fig. 1 flexible solar battery; Being binode lamination amorphous silicon battery structure, is that substrate 9 is the P type amorphous silicon 8 of nesa coating 7, top battery, the eigen I type amorphous silicon 6 of top battery, the N type microcrystal silicon 5 of top battery, the P type microcrystal silicon 4 of end battery successively by resistant to elevated temperatures modification transparent flexible PI substrate, the intrinsic amorphous silicon 3 of end battery; The N type amorphous silicon 2 of end battery, metal film layer 1 is formed.
Fig. 2, be the structural representation of the utility model flexible solar photovoltaic module.Wherein 303 is that printing opacity curved glass, 302 is that adhesive, 301 is that solar battery chip, 304 is the printing opacity curved glass.The flexible solar battery chip is packaged into the light-transmission type solar photovoltaic assembly by the printing opacity curved glass.
Followingly further specify the operation principle of the utility model according to accompanying drawing, traditional at low temperature below 200 ℃, the nesa coating poor-performing that deposits on the soft substrate, the face resistance of nesa coating is high, is unfavorable for improving the conversion efficiency of solar cell.
Under the substrate temperature of the utility model more than 300 ℃, on the modified polyimide substrate, deposition is formed the high-quality N type and the P type microcrystal silicon of lamination amorphous silicon battery tunnel junction.Usually substrate temperature is high more; The energy that is deposited on on-chip atom more than 300 ℃ is just big more; The substrate surface that is strapped in that might shake off substrate more moves freely, and is adjusted at residing position on the substrate, and reaches optimum state; Thereby the defective in the minimizing microcrystalline sillicon film is prepared the microcrystalline sillicon film of high-quality.Otherwise when substrate temperature was lower than 200 ℃, the microcrystalline sillicon film defective of preparation was more, poor-performing.
The utility model clamps the device of exceptionally straight PI substrate, adopts a kind of firm resistant to elevated temperatures rigid material, makes the installation and removal of modified polyimide substrate convenient; Be difficult for breaking, fully can be compatible with the production technology of existing glass substrate non-crystal silicon solar cell, under higher temperature, can take out battery; Shorten the cooling stand-by period; Can be that non-crystal silicon solar cell production equipment and the technology of substrate is compatible mutually with glass, not need in addition new production line again, this equipment investment cost be low.
The structure of non-crystal silicon solar cell that uses the high molecular polymer substrate of full impregnated light is that example can adopt with the single junction cell: modification transparent substrate PI, nesa coating TCO, P type amorphous silicon P
+A-Si, intrinsic amorphous silicon I a-Si, N type amorphous silicon N
+The structure of a-Si, metal film Al.
Embodiment
Example 1
Soft basic flexible solar battery photovoltaic module; Its core component comprises unijunction or ties silica-based series thin film solar battery chip more; Battery chip is done the PI substrate with the high molecular polymer transparent, high-transmittance of modification, and the printing opacity through hole that distributes in its preceding electrode zone comprises conduction hole and confluxes the hole;
By silk screen printing or be sprayed on the high temperature film forming on the stainless steel template, the PI substrate that demoulding is processed;
On the PI substrate of insulation, also have the layer of transparent conducting film, have range upon range of in regular turn P type amorphous silicon film layer, I intrinsic amorphous silicon layer, N type amorphous silicon film layer and a metallic diaphragm on it at least;
The printing opacity through hole connects and is distributed on each thin layer of PI substrate, substrate nesa coating, opto-electronic conversion lamination;
A kind of light-transmission type cell photovoltaic assembly that is prepared from lamination/autoclave above battery chip and transparent organic or inorganic header board and back veneer material.
The battery chip manufacturing approach of present embodiment is following:
Adopt the stainless steel thin slice template (or being called for short template) of 0.5 millimeters thick, the printing opacity through hole (not drawing among the figure) that distributes in the electrode pattern before which is provided with comprises the current steering hole and confluxes the hole;
The polyamic acid slurry of filling a prescription and making in molar ratio;
On template,, obtain transparently uniformly the silk screen printing of polyamic acid slurry, have the printing opacity through hole, comprise the modified polyimide substrate in the current steering hole and the hole of confluxing through 350 ℃ of processing of high temperature;
Under 350 ℃ of temperature, on the modified polyimide substrate, deposit an aspect resistance with magnetron sputtering method
15 Ω/, the ZnO nesa coating of light transmittance 93%;
Need not nesa coating with laser grooving and scribing ZnO;
The PI substrate deposition clamp of packing into is pushed vacuum chamber at the I type amorphous silicon 900 of 220 ℃ of temperature deposit P type amorphous silicons 100, top battery, the I type amorphous silicon 2800 of end battery, the N type amorphous silicon 200 of end battery, and the N type microcrystalline silicon film layer 200 of the P type microcrystalline silicon film layer 200 of battery and top battery forms tunnel junctions at the bottom of 300 ℃ of temperature deposit;
After deposition clamp is come out of the stove, substrate frame in the deposition clamp and modified polyimide substrate on it are taken out and under the environment below 20 ℃, carry out fast cooling;
Laser grooving and scribing is deposited on the on-chip amorphous silicon film of modified polyimide, forms the passage that connects adjacent two joint element cell both positive and negative polarities;
Place aluminum-spraying machine to be coated with the aluminum metal film then;
Laser grooving and scribing aluminum metal film;
Process the core component light-transmission type flexible amorphous silicon solar cell of the utility model battery component at last or claim battery chip.
Example 2
Adopting thickness is 0.45mm stainless steel matrix or band, and flexible amorphous silicon solar battery chip manufacturing step only changes the thickness that modification PI substrate is made prescription, amorphous silicon membrane depositing temperature and each tunic with example 1:
By 3,3`-three fluoro dimethyl-4,4` MDA: N, N-dimethylacetylamide: 2; 3,3`, the molar ratio of 4`-bibenzene tetracarboxylic dianhydride=1.0: 47: 1.0 be diamine monomer 3,3`-three fluoro dimethyl-4; The 4` MDA joins N, in the N-dimethylacetylamide DMAc solution, charges into nitrogen, stirs under the room temperature after 5 minutes; Begin to add 2,3,3`, 4`-bibenzene tetracarboxylic dianhydride a-BPDA. is under nitrogen protection; Stirring at room reaction 20 hours. vacuum defoamation obtains water white polyamic acid viscous solution after filtering. and this solution coat on clean glass plate, is put into baking oven again and dried by follow procedure: 120 ℃/1h; 170 ℃/1h; 280 ℃/1h; Obtain uniform transparent modified PI substrate after the 350 ℃/1h. cooling.
I type at the P type amorphous silicon 120 of 235 ℃ vacuum chamber temperature deposit top batteries, top battery is non-
The I type amorphous silicon 3100 of crystal silicon 800, end battery, the N type amorphous silicon 150 of end battery, the N type microcrystalline silicon film layer 150 of the P type microcrystalline silicon film layer 150 of battery and top battery forms tunnel junction at the bottom of 350 ℃ of temperature deposit.
Example 3
Adopting thickness is 0.65mm stainless steel matrix or band, and flexible amorphous silicon solar battery chip manufacturing step is with example 1, and its encapsulation step is following:
1) lamination plane of adhesive (like EVA, PE etc.) formation that to adopt thickness be the transparent flexible header board thin polymer film (like polyvinyl fluoride, fluorinated ethylene propylene copolymer etc.) of 25 μ m ~ 75 μ m with thickness is 25 μ m ~ 75 μ m.
2) will be coated with the tin copper strips and press the two ends that are bonded at battery chip.
3) post before adhesive/transparent flexible header board thin polymer film is sent to hot press of the battery sheet that is coated with the tin band and support; Meanwhile; Thickness is the adhesive (like EVA, PE etc.) of 25 μ m ~ 75 μ m, and thickness is 25 μ m ~ 75 μ m flexible back plate thin polymer films (one deck macromolecule membrane or multilayer organic/inorganic composite material).According to the designing requirement of BIPV length component, this upper two layers material will be reserved wire hole in the position of certain intervals.
4) flexible unit that hot pressing is good will be cut out according to the assembly module size.And at lead outlet bonding wire, installation connection box and encapsulating.
Claims (9)
1. soft basic flexible solar battery photovoltaic module; The core component that constitutes the cell photovoltaic assembly comprises unijunction or ties silica-based series thin film solar battery chip more; And encapsulating material; It is characterized in that flexible battery uses light transmittance to cook substrate as the high molecular polymer of 90%-95%, the printing opacity through hole that distributes in its preceding electrode zone comprises conduction hole and confluxes the hole;
By silk screen printing or be sprayed on the high temperature film forming on the stainless steel template, the PI substrate that demoulding is processed;
On the PI substrate of insulation, also have the layer of transparent conducting film, have range upon range of in regular turn P type amorphous silicon film layer, I intrinsic amorphous silicon layer, N type amorphous silicon film layer and a metallic diaphragm on it at least;
Said printing opacity through hole connects and is distributed on each thin layer of PI substrate, substrate nesa coating, opto-electronic conversion lamination;
Said assembly is to encapsulate a kind of light-transmission type cell photovoltaic assembly that forms by said battery chip and transparent organic or inorganic header board and back veneer material.
2. a kind of soft basic flexible solar battery photovoltaic module according to claim 1; It is characterized in that said stainless steel template is thick stainless steel substrates of 0.45mm to 0.65mm or band, on it loophole logical be preset be distributed in before conflux hole and pod apertures in the electrode pattern zone.
3. a kind of soft basic flexible solar battery photovoltaic module according to claim 1 is characterized in that said light-transmission type cell photovoltaic assembly is clipped in header board by battery chip and backboard all is in the adhesive of glass.
4. a kind of soft basic flexible solar battery photovoltaic module according to claim 3 is characterized in that said light-transmission type cell photovoltaic assembly, and its header board and backboard all are transparent high molecular polymers.
5. a kind of soft basic flexible solar battery photovoltaic module according to claim 4 is characterized in that said light-transmission type cell photovoltaic assembly, also comprises lead outlet bonding wire, installation connection box and encapsulating.
6. a kind of soft basic flexible solar battery photovoltaic module according to claim 4 is characterized in that said light-transmission type cell photovoltaic assembly comprises battery chip unijunction or many knots.
7. a kind of soft basic flexible solar battery photovoltaic module according to claim 6 is characterized in that the battery chip of said cell photovoltaic component package comprises unijunction, or the homojunction or the heterojunction of many knots.
8. a kind of soft basic flexible solar battery photovoltaic module according to claim 5 is characterized in that said cell photovoltaic component package header board and backboard are the transparent flexible polymer, comprises polyvinyl fluoride, fluorinated ethylene propylene copolymer thin-film package.
9. a kind of soft basic flexible solar battery photovoltaic module according to claim 1 is characterized in that the polyimides transparent material that said PI substrate is modification, high temperature resistant more than 350 ℃ four hours indeformable.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204735475U CN202332901U (en) | 2011-11-24 | 2011-11-24 | Soft-base flexible solar-cell photovoltaic module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204735475U CN202332901U (en) | 2011-11-24 | 2011-11-24 | Soft-base flexible solar-cell photovoltaic module |
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| CN202332901U true CN202332901U (en) | 2012-07-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465893A (en) * | 2013-09-17 | 2015-03-25 | 深圳市宇光高科新能源技术有限公司 | Transmittance film solar battery and manufacture method thereof |
| CN110311014A (en) * | 2019-07-08 | 2019-10-08 | 绵阳金能移动能源有限公司 | A method of reducing flexible copper indium gallium selenide solar cell series connection resistance |
-
2011
- 2011-11-24 CN CN2011204735475U patent/CN202332901U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465893A (en) * | 2013-09-17 | 2015-03-25 | 深圳市宇光高科新能源技术有限公司 | Transmittance film solar battery and manufacture method thereof |
| CN110311014A (en) * | 2019-07-08 | 2019-10-08 | 绵阳金能移动能源有限公司 | A method of reducing flexible copper indium gallium selenide solar cell series connection resistance |
| CN110311014B (en) * | 2019-07-08 | 2020-11-24 | 绵阳金能移动能源有限公司 | Method for reducing series resistance of flexible copper indium gallium selenide solar cell |
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Granted publication date: 20120711 |